CN115917758A - 一种薄膜晶体管、显示基板及其制作方法和显示装置 - Google Patents

一种薄膜晶体管、显示基板及其制作方法和显示装置 Download PDF

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Publication number
CN115917758A
CN115917758A CN202180000493.7A CN202180000493A CN115917758A CN 115917758 A CN115917758 A CN 115917758A CN 202180000493 A CN202180000493 A CN 202180000493A CN 115917758 A CN115917758 A CN 115917758A
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CN
China
Prior art keywords
layer
substrate
metal
thin film
channel region
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CN202180000493.7A
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English (en)
Inventor
黄杰
赵坤
宁策
李正亮
胡合合
贺家煜
姚念琦
刘凤娟
雷利平
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Publication of CN115917758A publication Critical patent/CN115917758A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管、显示基板及其制作方法和显示装置,其中,薄膜晶体管,设置在基底上,包括:依次设置在基底上的有源层和源漏电极,有源层包括:第一沟道区域和第二沟道区域;第一沟道区域在基底上的正投影与源漏电极在基底上的正投影无重叠区域;第一沟道区域的长度方向的边缘的形状为非直线形,且第一沟道区域的长度方向的边缘的长度大于源漏电极之间的距离。

Description

PCT国内申请,说明书已公开。

Claims (20)

  1. PCT国内申请,权利要求书已公开。
CN202180000493.7A 2021-03-15 2021-03-15 一种薄膜晶体管、显示基板及其制作方法和显示装置 Pending CN115917758A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/080769 WO2022193063A1 (zh) 2021-03-15 2021-03-15 一种薄膜晶体管、显示基板及其制作方法和显示装置

Publications (1)

Publication Number Publication Date
CN115917758A true CN115917758A (zh) 2023-04-04

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Application Number Title Priority Date Filing Date
CN202180000493.7A Pending CN115917758A (zh) 2021-03-15 2021-03-15 一种薄膜晶体管、显示基板及其制作方法和显示装置

Country Status (2)

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CN (1) CN115917758A (zh)
WO (1) WO2022193063A1 (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW595005B (en) * 2003-08-04 2004-06-21 Au Optronics Corp Thin film transistor and pixel structure with the same
CN206773360U (zh) * 2017-03-13 2017-12-19 厦门天马微电子有限公司 阵列基板、显示面板及显示装置
CN109686793A (zh) * 2018-12-24 2019-04-26 合肥鑫晟光电科技有限公司 薄膜晶体管及制备方法、阵列基板、显示装置
CN111584641A (zh) * 2020-05-19 2020-08-25 京东方科技集团股份有限公司 一种薄膜晶体管结构及显示器件
CN111599824B (zh) * 2020-06-01 2022-09-13 厦门天马微电子有限公司 一种阵列基板、制备方法以及显示装置
CN112349733B (zh) * 2020-09-09 2022-09-06 湖北长江新型显示产业创新中心有限公司 阵列基板、阵列基板的制造方法及显示装置

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Publication number Publication date
WO2022193063A9 (zh) 2022-12-22
WO2022193063A1 (zh) 2022-09-22

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