CN115873600A - Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film - Google Patents
Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film Download PDFInfo
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- CN115873600A CN115873600A CN202211499157.4A CN202211499157A CN115873600A CN 115873600 A CN115873600 A CN 115873600A CN 202211499157 A CN202211499157 A CN 202211499157A CN 115873600 A CN115873600 A CN 115873600A
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- 239000007788 liquid Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910052984 zinc sulfide Inorganic materials 0.000 title claims abstract description 41
- 239000005083 Zinc sulfide Substances 0.000 title claims abstract description 38
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 37
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 58
- 230000007797 corrosion Effects 0.000 claims abstract description 37
- 238000005260 corrosion Methods 0.000 claims abstract description 37
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 52
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 50
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 24
- 229910017604 nitric acid Inorganic materials 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 14
- 239000011148 porous material Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- 229920002313 fluoropolymer Polymers 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000011550 stock solution Substances 0.000 claims description 5
- 238000011010 flushing procedure Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 25
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000000126 substance Substances 0.000 abstract description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052794 bromium Inorganic materials 0.000 abstract description 2
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 54
- 239000000463 material Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 7
- 229910004613 CdTe Inorganic materials 0.000 description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- 238000007664 blowing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012445 acidic reagent Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the technical field of mercury cadmium telluride infrared focal plane detectors, and provides a holing corrosive liquid and a holing method applied to a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device, which avoid the problems of low selectivity and corrosion expansion in a bromine-based chemical corrosion method and the technical problem of poor electrode contact in a dichromate wet chemical corrosion method.
Description
Technical Field
The invention belongs to the technical field of mercury cadmium telluride infrared focal plane detectors, and particularly relates to a tapping corrosive liquid and a tapping method applied to a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device.
Background
Infrared detection as a high precisionThe technology has important and wide application in the fields of aerospace, environmental monitoring, national defense safety and the like. The mercury cadmium telluride (HgCdTe) as ternary compound semiconductor material has potential application value in the field of infrared detector technology development 1-x Cd x Te) material has the characteristics of adjustable band gap, large optical absorption coefficient, long service life of current carriers, high electron mobility, high working temperature and the like, and the excellent performance of the material enables mercury cadmium telluride to become a very important material for manufacturing an infrared focal plane device, which is always the first choice for preparing an infrared detector for many years.
Surface leakage current is one of the major problems that limit the performance of the detector. The optimization of the passivation process can reduce the generation of surface electric leakage and improve the performance of the detector. The chemical components, lattice constant, crystal structure and the like of the CdTe are close to those of the HgCdTe, so that the defects and fixed charges at the interface of the HgCdTe/CdTe can be reduced, and the CdTe serving as a passivation medium film has very good physical and chemical stability and is considered as an optimal surface passivation material of the HgCdTe focal plane device. Therefore, the CdTe/ZnS composite passivation technology is one of the optimal ways to replace a single-layer ZnS passivation technology and is also the mainstream technology of the passivation technology of the high-performance mercury cadmium telluride device at present.
However, hgCdTe focal plane infrared detector devices passivated with CdTe have certain difficulties in metallizing the openings due to: because the physical and chemical properties of CdTe and HgCdTe are very similar, the conventional bromine-based wet chemical etching or dry etching method has no high selectivity, and the depth and the end point position of the opening are difficult to control; the selective etchant containing dichromate has a high selectivity, but the etchant causes poor metal-semiconductor contact performance with Hg oxide formed from HgCdTe, and causes the upper ZnS electrode pore to be etched by removing Hg oxide with an acidic reagent. And moreover, the two layers of passive films are respectively perforated, so that the risk of perforated corrosion expansion is correspondingly improved while the number of process steps is increased, and the process controllability is reduced. The development of a double-layer passivation one-step hole forming technology which is not easy to expand corrosion, controllable in speed and high in corrosion selectivity ratio is very important for realizing a batch preparation process of double-layer passivation focal plane devices.
Therefore, there is a need to provide a technical solution to solve the above technical problems in the prior art.
Disclosure of Invention
The invention provides a holing corrosive liquid and a holing method for a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device, which can at least solve part of problems in the prior art.
To solve the above technical problem, according to an aspect of the present invention, the present invention provides the following technical solutions:
the opening corrosive liquid for the cadmium telluride/zinc sulfide double-layer passivation film comprises hydrochloric acid, nitric acid and hydrofluoric acid.
As a preferred scheme of the open pore corrosive liquid of the cadmium telluride/zinc sulfide double-layer passive film, the method comprises the following steps: the proportion of each component of the open pore corrosive liquid is as follows according to the volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid =4:1: (0.2-2), wherein the mass percent of the hydrochloric acid is 37%, the mass percent of the nitric acid is 70%, and the mass percent of the hydrofluoric acid is 40%.
An open pore corrosive liquid of a cadmium telluride/zinc sulfide double-layer passive film, wherein: the components of the open pore corrosive liquid are hydrochloric acid, nitric acid, hydrofluoric acid and water.
As a preferred scheme of the open pore corrosive liquid of the cadmium telluride/zinc sulfide double-layer passive film, the method comprises the following steps: the proportion of each component of the open pore corrosive liquid is as follows according to the volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid: water =4:1: (0.2-2): (0-1), wherein the content of water is not 0, the mass percent of hydrochloric acid is 37%, the mass percent of nitric acid is 70%, and the mass percent of hydrofluoric acid is 40%.
In order to solve the above technical problem, according to another aspect of the present invention, the present invention provides the following technical solutions:
a method for perforating a cadmium telluride/zinc sulfide double-layer passivation film by adopting the perforating corrosive liquid comprises the following steps:
s1: carrying out photoetching development on the device;
s2: preparing a pore-opening corrosive liquid;
s3: and (3) etching holes: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid for the photoetched device sample, and washing and drying after the etching is finished to finish the electrode hole opening process of the double-layer passivation film of the device.
As a preferred scheme of the method for perforating the cadmium telluride/zinc sulfide double-layer passivation film by using the perforating corrosive liquid, the method comprises the following steps: the specific steps of the photolithography development in step S1 are: and coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and photoetching and developing to form a photoresist pattern suitable for preparing a contact hole.
As a preferred scheme of the method for perforating the cadmium telluride/zinc sulfide double-layer passivation film by using the perforating corrosive liquid, the method comprises the following steps: the preparation method of the open-hole corrosive liquid in the step S2 comprises the following steps: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the stock solution of the corrosive liquid, adding the required hydrofluoric acid, fully stirring and uniformly mixing, and slowly adding nitric acid.
As a preferred scheme of the method for perforating the cadmium telluride/zinc sulfide double-layer passivation film by using the perforating corrosive liquid, the method comprises the following steps: the steps of washing and drying in the step S3 are as follows: the device was rinsed in flowing deionized water and blown dry with nitrogen.
The invention has the following beneficial effects:
1. the opening corrosive liquid has similar corrosion rate to cadmium telluride and zinc sulfide, has higher corrosion selectivity compared with a mercury cadmium telluride material, can realize selective opening treatment on a double-layer passivation film on the surface of the mercury cadmium telluride material, and has stable physicochemical property and stable and controllable corrosion rate.
2. The holing corrosive liquid is adopted to carry out holing corrosion treatment on the cadmium telluride and zinc sulfide double-layer passivation layer on the surface of the mercury cadmium telluride material, the holing can be completed while the double-layer passivation film is holing only by one-step corrosion, and the two layers of passivation films do not need to be respectively subjected to two-step photoetching and holing treatment, so that the process steps are reduced, and the increase of process difficulty caused by the alignment precision is avoided.
3. The holing corrosive liquid is adopted to carry out holing corrosion treatment on the cadmium telluride and zinc sulfide double-layer passivation layer on the surface of the mercury cadmium telluride material, has the characteristics of difficult diffusion corrosion and no influence on metallized ohmic contact, is beneficial to improving the metal-semiconductor contact performance, improves the process stability, and is vital to realizing the batch preparation process of double-layer passivated focal plane devices.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a sectional view of the opening depth of the double-layer passivation film at different etching times by the opening etching solution of the present invention;
FIG. 2 is a surface topography diagram of the bilayer passivation film after being subjected to the holing treatment by the holing corrosive liquid of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The following will clearly and completely describe the technical solutions in the embodiments, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative position relationship between the components, the motion situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a holing corrosive liquid and a holing method for a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device, which can selectively corrode the cadmium telluride/zinc sulfide double-layer passivation film on the surface of the mercury cadmium telluride in a single corrosion holing treatment process, simplify the holing treatment process, improve the stability of the process and contribute to realizing the batch production of double-layer passivation focal plane devices.
The opening corrosive liquid for the cadmium telluride/zinc sulfide double-layer passivation film comprises the following components in percentage by volume: hydrochloric acid: nitric acid: hydrofluoric acid =4:1: (0.2-2), wherein the mass percent of the hydrochloric acid is 37%, the mass percent of the nitric acid is 70%, and the mass percent of the hydrofluoric acid is 40%.
An open pore corrosive liquid of a cadmium telluride/zinc sulfide double-layer passive film, wherein: the components of the holing corrosive liquid are hydrochloric acid, nitric acid, hydrofluoric acid and water, and the proportion of the components of the holing corrosive liquid is as follows according to the volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid: water =4:1: (0.2-2): (0-1), the content of water is not 0, wherein the mass percent of hydrochloric acid is 37%, the mass percent of nitric acid is 70%, and the mass percent of hydrofluoric acid is 40%.
The method for perforating the cadmium telluride/zinc sulfide double-layer passive film by adopting the perforating corrosive liquid comprises the following steps:
s1: photoetching and developing: coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing a contact hole;
s2: preparing a pore-opening corrosive liquid: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the stock solution of the corrosive liquid, adding the required hydrofluoric acid, fully stirring and uniformly mixing, and slowly adding nitric acid;
s3: and (3) etching and opening holes: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid for the photoetched device sample, flushing the device in flowing deionized water after the corrosion is finished, and drying the device by blowing nitrogen to finish the electrode hole opening process of the double-layer passivation film of the device.
Example 1
A method for forming holes in a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride material comprises the following steps:
s1: photoetching and developing: coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing a contact hole;
s2: preparing a pore-opening corrosive liquid: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of a stock solution of the corrosive liquid, adding required hydrofluoric acid, fully stirring and uniformly mixing, slowly adding nitric acid, wherein the proportion of each component of the open pore corrosive liquid is as follows according to the volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid =4:1:1;
s3: and (3) etching and opening holes: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid for the device sample after photoetching, flushing the device in flowing deionized water after the corrosion is finished, and drying the device by blowing nitrogen to finish the electrode hole perforating process of the double-layer passivation film of the device.
Example 2
A method for forming holes in a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride material comprises the following steps:
s1: photoetching and developing: coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing a contact hole;
s2: preparing a pore-opening corrosive liquid: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of a stock solution of the corrosive liquid, adding required hydrofluoric acid, fully stirring and uniformly mixing, slowly adding nitric acid, wherein the proportion of each component of the open pore corrosive liquid is as follows according to the volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid: water =4:1:0.2:0.8;
s3: and (3) etching and opening holes: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid for the photoetched device sample, flushing the device in flowing deionized water after the corrosion is finished, and drying the device by blowing nitrogen to finish the electrode hole opening process of the double-layer passivation film of the device.
The results of performing corrosion and hole opening treatment on the double-layer passivation films with different thicknesses by adopting the hole opening corrosion methods in the embodiment 1 and the embodiment 2 show that the corrosion rate of the zinc sulfide passivation layer can be ensured by adding hydrochloric acid into the corrosion solution and maintaining a high hydrochloric acid ratio, and meanwhile, the corrosion rate of the mercury cadmium telluride material is reduced by adding hydrofluoric acid, so that the corrosion selection ratio of the corrosion solution to the double-layer passivation film and the mercury cadmium telluride material is improved. The time required for the completion of the opening treatment in the corrosion opening method of example 1 and example 2 is shown in the following table, respectively:
| thickness of double-layer passivation film | Example 1 | Example 2 |
| 3000A | 6s | 8s |
| 4500A | 8s | 12s |
| 6000A | 11s | 15s |
Meanwhile, the corrosion opening rate of the embodiment 2 is measured and calculated, and test results show that when the corrosion solution of the embodiment 2 is used for opening, the corrosion rates of the zinc sulfide and the cadmium telluride passivation layer are approximate to 40-50 nm/s, and the corrosion rate of the mercury cadmium telluride material is approximately 10nm/s. For the epitaxy with the total thickness of the double-layer passivation of 450nm, the opening depth and the surface topography after the opening treatment at different etching times are shown in the attached drawings 1-2, the opening depth of etching 8s is 344nm, the opening depth of etching 10s is 454nm, and the opening depth of etching 30s is 645nm. Test results show that the corrosion liquid and the corrosion method have higher corrosion selection ratio and can meet the requirements of a double-layer passivation holing process which is difficult to expand corrosion and has strong depth controllability.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the present specification and directly/indirectly applied to other related technical fields within the spirit of the present invention are included in the scope of the present invention.
Claims (8)
1. The open pore corrosive liquid for the cadmium telluride/zinc sulfide double-layer passivation film is characterized by comprising hydrochloric acid, nitric acid and hydrofluoric acid.
2. The open-cell corrosion solution for the cadmium telluride/zinc sulfide double-layer passivation film as claimed in claim 1, wherein the proportion of each component of the open-cell corrosion solution by volume ratio is as follows: hydrochloric acid: nitric acid: hydrofluoric acid =4:1: (0.2-2), wherein the mass percent of the hydrochloric acid is 37%, the mass percent of the nitric acid is 70%, and the mass percent of the hydrofluoric acid is 40%.
3. The opening corrosive liquid for the cadmium telluride/zinc sulfide double-layer passive film is characterized by comprising hydrochloric acid, nitric acid, hydrofluoric acid and water.
4. The open-cell corrosion solution for the cadmium telluride/zinc sulfide double-layer passivation film as claimed in claim 3, wherein the proportion of each component of the open-cell corrosion solution by volume ratio is as follows: hydrochloric acid: nitric acid: hydrofluoric acid: water =4:1: (0.2-2): (0-1), wherein the content of water is not 0, the mass percent of hydrochloric acid is 37%, the mass percent of nitric acid is 70%, and the mass percent of hydrofluoric acid is 40%.
5. A method for aperturing a cadmium telluride/zinc sulfide bi-layer passivation film using the open-cell etching solution of any one of claims 1-4, comprising the steps of:
s1: carrying out photoetching development on the device;
s2: preparing a pore-opening corrosive liquid;
s3: and (3) etching and opening holes: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid for the device sample after photoetching, and flushing and drying after the etching is finished to finish the electrode hole perforating process of the double-layer passivation film of the device.
6. The method for perforating a cadmium telluride/zinc sulfide double-layer passivation film by using the perforating corrosive liquid as claimed in claim 5, wherein the specific steps of photoetching and developing in the step S1 are as follows: and coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and photoetching and developing to form a photoresist pattern suitable for preparing a contact hole.
7. The method for perforating a cadmium telluride/zinc sulfide double-layer passivation film by using the perforating corrosive liquid as claimed in claim 5, wherein the preparing method of the perforating corrosive liquid in the step S2 is as follows: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the stock solution of the corrosive liquid, adding the required hydrofluoric acid, fully stirring and uniformly mixing, and slowly adding nitric acid.
8. The method for perforating a cadmium telluride/zinc sulfide double-layer passivation film by using the perforating corrosive liquid as claimed in claim 5, wherein the steps of washing and drying in the step S3 are as follows: the device was rinsed in flowing deionized water and blown dry with nitrogen.
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| CN116741874A (en) * | 2023-05-30 | 2023-09-12 | 北京智创芯源科技有限公司 | Method for preparing contact hole on tellurium-cadmium-mercury infrared detector chip |
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