CN101494254A - Metalization hatch method for cadmium telluride passivating film of mercury cadmium telluride infrared detecting chip - Google Patents
Metalization hatch method for cadmium telluride passivating film of mercury cadmium telluride infrared detecting chip Download PDFInfo
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- CN101494254A CN101494254A CNA2009100469935A CN200910046993A CN101494254A CN 101494254 A CN101494254 A CN 101494254A CN A2009100469935 A CNA2009100469935 A CN A2009100469935A CN 200910046993 A CN200910046993 A CN 200910046993A CN 101494254 A CN101494254 A CN 101494254A
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Abstract
The invention discloses a metalized opening method of a mercury cadmium telluride passive film in a mercury cadmium telluride infrared detection chip. The method relates to a preparation technology of an HgCdTe infrared focal plane detector, in particular comprising the preparation of a selective etching solution of a CdTe passive film of the HgCdTe detection chip and a method for using the etching solution to carry out the metalized opening of the detector chip. The result shows that the etching solution has a high etching selective ration on CdTe and HgCdTe materials, and is stable with controllable etching speed. The opening method is a stable and convenient technology, has no effect on other surface treatment technologies, facilitates the improvement of surface properties of a device, improves technological stability and is vital to realize the application of CdTe passivation to a focal plane device.
Description
Technical field
The present invention relates to the fabricating technology of mercury cadmium telluride (HgCdTe) infrared focal plane detector, specifically comprise the preparation of HgCdTe detection chip cadmium telluride (CdTe) passivating film selective corrosion liquid and utilize this corrosive liquid to carry out the method for detector chip metalization hatch.
Background technology
Semiconductor device as the low energy gap width, the fixed charge on HgCdTe infrared focal plane detection chip surface can cause the band curvature of one or several energy gap orders of magnitude, cause the surface serious accumulation to occur, exhaust or transoid, and then reduce the performance of Infrared Detectors greatly.Thereby for obtaining the band structure near flat rubber belting, HgCdTe infrared focus plane detection chip need be carried out surface passivation effectively.
Because the lattice match of CdTe and HgCdTe material can reduce the defective and the fixed charge at HgCdTe/CdTe interface place.And CdTe has extraordinary chemistry and physical stability as the dielectric passivation film.These have very big potentiality for dark current that reduces the infrared focus plane detection chip and raising infrared focal plane detector reliability.So CdTe passivation or CdTe/ZnS dual layer passivation are the main developing direction of mercury cadmium telluride infrared ray optical direction and photovoltaic device passivation technology.
But, adopt the HgCdTe infrared detecting chip of CdTe passivation, can run into the technical barrier of metalization hatch.This be because CdTe very close with the HgCdTe physical and chemical performance, the routine the bromo wet-chemical etching or induce coupled plasma (ICP) dry etching not have high selectivity, be difficult to control the metalization hatch terminal point; Though and the metalization hatch technology that adopts floating glue to peel away electrode hole can be avoided the shortcoming of the difficult control of etch end point, carries out extra chip photoetching before passivation, has not only increased processing step, also greatly limited the preceding surface treatment of passivation and selected.Therefore, bromo wet-chemical etching, ICP etching and floating glue stripping means are held electrode hole all can unavoidably have influence on passivation effect and even resulting devices performance.
Along with the development of HgCdTe infrared focus plane technology, tracking current earth effect to the utmost the further raising of device performance.Whether can resolve the problem of the metalization hatch of CdTe passivating film, can be successfully applied in the focal plane device technology most importantly for the CdTe passivation, thereby become the problem that this field worker pays much attention to.
Summary of the invention
Based on the existing problem of above-mentioned dual layer passivation electrode hole technology, in order to obtain better CdTe passivation effect and metal-semiconductor contact performance thereafter, the invention provides the dual layer passivation metalization hatch technology that a kind of desirable CdTe corrosive liquid proportioning and a kind of optimization are utilized this corrosive liquid.
Particularly, the present invention thes contents are as follows:
A. the fluoroplastics cup is placed the glassware that mixture of ice and water is housed, be placed on the magnetic stirring apparatus, temperature in the fluoroplastics cup reaches stable, proportioning according to corrosive liquid stoste adds required hydrofluoric acid, open magnetic stirring apparatus, slowly add potassium bichromate and nitric acid, be with it fully to dissolve the back and add lactic acid;
B. dilute corrosive liquid stoste according to required corrosion and passivation layer thickness (seeing Table 1) and electrode hole pore size with deionized water then, stoste after the dilution still remains on about 0 ℃, and cover with fluoroplastics vessel sealings, in order to avoid the solute volatilization produces dangerous and influences corrosive liquid concentration;
C. the chip sample after the photoetching is loaded on voluntarily on the fluoroplastics corrosion frame of design, uses pure hydrochloric acid to carry out corrosion in 3～5 seconds, finish corroding electrode hole ZnS layer after, with surperficial 1～2 minute of deionized water lavage specimens product;
D. at last under the mixture of ice and water temperature, use magnetic agitation,, place mobile deionized water flushing 5 minutes, finish whole dual layer passivation and open electrode hole technology with the corrosion of the CdTe corrosive liquid after dilution CdTe layer 3～10 seconds.
This corrosive liquid stoste is according to potassium bichromate: hydrofluoric acid: lactic acid: nitric acid ratio 5g: 10ml: 5ml: 25ml preparation.Because hydrofluoric acid can produce corrosion to glassware, mix during preparation so need place the fluoroplastics cup to prepare.The fluoroplastics cup that whole process for preparation will be used for mixing is placed on the big glassware that mixture of ice and water is housed, and purpose is to guarantee temperature constant in the corrosive liquid process for preparation, reduces human error, avoids the corrosion rate deviation that may cause.For solution is mixed, having used magnetic stirring apparatus, purpose during the solution preparation is to reduce human error and manually stir issuable safety problem in addition.
We have following supposition for the principle of this corrosive liquid: at first utilize the oxidizability of dichromate ion that CdTe is carried out oxidation, produce the oxide of Cd and Te respectively, and utilize nitric acid and hydrofluoric acid mixed solution to react with it, finally generate soluble substance.And when this corrosive liquid contacts with HgCdTe, can form the oxide precipitate of Hg fast, make reaction terminating.Lactic acid in the prescription mainly plays cushioning effect, in order to improve reacted electrode hole pattern.
Than additive method, the present invention has the following advantages:
1) CdTe and HgCdTe material had high corrosion selection ratio;
2) can not influence other process of surface treatment;
3) corrosion rate is controlled, process stabilizing is convenient;
4) solution-stabilized, nontoxic to human body.
The ratio of water and stoste is with reference to following table during table 1. dilution
Description of drawings
Fig. 1 observes image for sediments microscope inspection, among the figure: before the a:CdTe corrosion (having removed the ZnS layer); B: corroded 9 seconds; C: corrode after 12 seconds.Relatively each figure can find, a figure electrode hole zone ZnS has removed totally, owing to still have the CdTe layer to cover, it is dim that the electrode hole zone seems; B figure electrode hole (than a figure) light, expression CdTe passivation layer has corroded totally; C:, cause the electrode hole opening to enlarge because etching time is long.
A figure, b figure record passivation layer thickness for the step instrument among Fig. 2, wherein a be passivation layer thickness when corroding 8 seconds (
Corrosive liquid is stoste dilution in 1: 4), b is the 11 seconds thickness after the corrosion; From a figure as can be seen,
(left side step) with
Setting when (maximum drop) thickness and growth is very identical, and lateral separation (about 200-450 micron) conforms to electrode hole photoetching pore size, and expression has been removed totally through 8 seconds corrosion CdTe layers, and do not produce horizontal proliferation, b figure expression only produced horizontal proliferation after the excessive corrosion in 11 seconds.In summary it can be seen this corrosive liquid only to CdTe selective corrosion, and evenly easily control of corrosion.
Embodiment
Below concrete enforcement of the present invention is described further:
With a CdTe/ZnS dual layer passivation sample metalization hatch is example.The sample passivating film all adopts the electron beam evaporation growth, and growth rate is
Final growth thickness shows CdTe
All kinds of chemistry are the MOS level, and what the solution preparation was used is the bottleneck pipettor that precision reaches 0.1ml, directly measures required dosage from reagent bottle.
Concrete implementation step is as follows:
A. at first on electronic balance, place clean culture dish and filter paper, and with the quality zeroing that shows.Potassium bichromate reagent bottle bottleneck will be housed aim at filter paper towards side-lower, light and handy body makes reagent evenly fall into the culture dish that is lined with filter paper.Until reaching required dosage.
B. the fluoroplastics cup is placed the glassware that mixture of ice and water is housed, be placed on the magnetic stirring apparatus, and in cup, put into erosion-resisting magnetic force oscillator.It is stable that equitemperature reaches, and uses the bottleneck pipettor to measure the hydrofluoric acid of required dosage, injects the fluoroplastics cup.
C. open magnetic stirring apparatus, use and measure required nitric acid with quadrat method, and with the alleged potassium bichromate while of getting slowly adds in the fluoroplastics cup before.
D. regulate magnetic stirring apparatus speed to middling speed and stirred 5 minutes so that reagent fully dissolves mixing.After this measure required lactic acid, slowly add and stir.After finishing the preparation of corrosive liquid stoste, lid tightly is equipped with the beaker of stoste, to avoid the solute volatilization to produce dangerous and to influence corrosive liquid concentration, notices that lid also should be unable to be corroded by HF.
E. measure the deionized water of 4 volumes with graduated cylinder, place another fluoroplastics cup.Use the bottleneck pipettor to measure the stoste of 1 volume, mix, by 1: 4 volume ratio dilution stoste with the deionized water of 4 volumes.Corrosive liquid after the dilution places the glassware that mixture of ice and water is housed equally, and waiting temperature is stable.
F. the chip sample after the photoetching is loaded on voluntarily on the fluoroplastics corrosion frame of design, this plastic processing frame can conveniently be regulated the angle of chip surface and horizontal plane, and chip is dropped or impaired.Use pure hydrochloric acid to carry out corrosion in 3～5 seconds under 0 ℃ of temperature, concrete etching time is subjected to the electrode hole area relevant with the corrosion gimmick, is as the criterion with microscopic examination.
After finishing corroding electrode hole ZnS layer, use deionized water lavage specimens product surface 1～2 minute.Under the mixture of ice and water temperature, use magnetic agitation at last, corroded the CdTe layer 8～10 seconds, place mobile deionized water flushing 5 minutes, finish whole dual layer passivation and open electrode hole technology with the CdTe corrosive liquid after the dilution.This step process etching time is influenced by aperture area etc. equally, is as the criterion with microscopy.
Claims (3)
1. the metalization hatch method of cadmium telluride passivating film in the mercury cadmium telluride infrared detecting chip, it is characterized in that: it may further comprise the steps:
A. the fluoroplastics cup is placed the glassware that mixture of ice and water is housed, be placed on the magnetic stirring apparatus, temperature in the fluoroplastics cup reaches stable, proportioning according to corrosive liquid stoste adds required hydrofluoric acid, open magnetic stirring apparatus, slowly add potassium bichromate and nitric acid, be with it fully to dissolve the back and add lactic acid;
B. dilute corrosive liquid stoste according to required corrosion and passivation layer thickness and electrode hole pore size with deionized water then, stoste after the dilution still remains on about 0 ℃, and cover with fluoroplastics vessel sealings, in order to avoid the solute volatilization produces dangerous and influences corrosive liquid concentration;
C. the chip sample after the photoetching is loaded on voluntarily on the fluoroplastics corrosion frame of design, uses pure hydrochloric acid to carry out corrosion in 3～5 seconds, finish corroding electrode hole ZnS layer after, with surperficial 1～2 minute of deionized water lavage specimens product;
D. at last under the mixture of ice and water temperature, use magnetic agitation, corrode by testing the CdTe layer of definite etching time with the CdTe corrosive liquid after the dilution, after corrosion finishes chip is placed mobile deionized water flushing 5 minutes, finish whole dual layer passivation and open electrode hole technology chip.
2. the metalization hatch method of cadmium telluride passivating film in a kind of mercury cadmium telluride infrared detecting chip according to claim 1 is characterized in that the proportioning of described corrosive liquid stoste is:
Potassium bichromate: hydrofluoric acid: lactic acid: nitric acid ratio=5g: 10ml: 5ml: 25ml.
3. the metalization hatch method of cadmium telluride passivating film in a kind of mercury cadmium telluride infrared detecting chip according to claim 1 is characterized in that: determining by following test data by the definite etching time of test described in the ratio of the ionized water dilution corrosive liquid stoste described in the step B and the step D:
The CdTe passivation layer thickness is 5000
The time, the ratio of the volume ratio of the dilution of corrosion stoste and deionized water is 1: 2, etching time is 8-10 second;
The CdTe passivation layer thickness is 3000
The time, the ratio of the volume ratio of the dilution of corrosion stoste and deionized water is 1: 4, etching time is 5-8 second;
The CdTe passivation layer thickness is 1000
The time, the ratio of the volume ratio of the dilution of corrosion stoste and deionized water is 1: 8, etching time is 2-4 second.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102508079A (en) * | 2011-11-10 | 2012-06-20 | 中国科学院上海技术物理研究所 | Hall sample preparation method removing tellurium-cadmium-mercury interface layer |
| CN101640231B (en) * | 2009-09-04 | 2012-08-29 | 中国电子科技集团公司第十一研究所 | Mesa passivation method of infrared two-color HgCdTe detector |
| CN103205752A (en) * | 2013-04-09 | 2013-07-17 | 中国电子科技集团公司第十一研究所 | Etching solution and etching method |
| CN105543980A (en) * | 2016-01-26 | 2016-05-04 | 电子科技大学 | Chemical etching method for bismuth selenide material |
| CN107452833A (en) * | 2017-06-26 | 2017-12-08 | 中国电子科技集团公司第五十研究所 | The preparation method and detector of the stop impurity band detector of micropore negative electrode structure |
| CN111403502A (en) * | 2020-03-30 | 2020-07-10 | 中国电子科技集团公司第十一研究所 | Method for preparing contact electrode of infrared detector chip |
| CN112117351A (en) * | 2020-09-22 | 2020-12-22 | 北京智创芯源科技有限公司 | Method for leading out electrical properties of mercury cadmium telluride pn junction and detector chip |
| CN115873600A (en) * | 2022-11-28 | 2023-03-31 | 武汉高芯科技有限公司 | Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film |
-
2009
- 2009-03-04 CN CNA2009100469935A patent/CN101494254A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640231B (en) * | 2009-09-04 | 2012-08-29 | 中国电子科技集团公司第十一研究所 | Mesa passivation method of infrared two-color HgCdTe detector |
| CN102508079A (en) * | 2011-11-10 | 2012-06-20 | 中国科学院上海技术物理研究所 | Hall sample preparation method removing tellurium-cadmium-mercury interface layer |
| CN102508079B (en) * | 2011-11-10 | 2014-04-09 | 中国科学院上海技术物理研究所 | Hall sample preparation method removing tellurium-cadmium-mercury interface layer |
| CN103205752A (en) * | 2013-04-09 | 2013-07-17 | 中国电子科技集团公司第十一研究所 | Etching solution and etching method |
| CN103205752B (en) * | 2013-04-09 | 2016-07-13 | 中国电子科技集团公司第十一研究所 | A kind of corrosive liquid and caustic solution |
| CN105543980A (en) * | 2016-01-26 | 2016-05-04 | 电子科技大学 | Chemical etching method for bismuth selenide material |
| CN107452833A (en) * | 2017-06-26 | 2017-12-08 | 中国电子科技集团公司第五十研究所 | The preparation method and detector of the stop impurity band detector of micropore negative electrode structure |
| CN107452833B (en) * | 2017-06-26 | 2019-06-07 | 中国电子科技集团公司第五十研究所 | The preparation method and detector of the blocking impurity band detector of micropore negative electrode structure |
| CN111403502A (en) * | 2020-03-30 | 2020-07-10 | 中国电子科技集团公司第十一研究所 | Method for preparing contact electrode of infrared detector chip |
| CN112117351A (en) * | 2020-09-22 | 2020-12-22 | 北京智创芯源科技有限公司 | Method for leading out electrical properties of mercury cadmium telluride pn junction and detector chip |
| CN112117351B (en) * | 2020-09-22 | 2021-05-11 | 北京智创芯源科技有限公司 | Method for leading out electrical properties of mercury cadmium telluride pn junction and detector chip |
| CN115873600A (en) * | 2022-11-28 | 2023-03-31 | 武汉高芯科技有限公司 | Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film |
| CN115873600B (en) * | 2022-11-28 | 2024-05-07 | 武汉高芯科技有限公司 | Punching corrosive liquid and punching method for cadmium telluride/zinc sulfide double-layer passivation film |
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Application publication date: 20090729 |