CN115873600B - Punching corrosive liquid and punching method for cadmium telluride/zinc sulfide double-layer passivation film - Google Patents
Punching corrosive liquid and punching method for cadmium telluride/zinc sulfide double-layer passivation film Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 65
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910052984 zinc sulfide Inorganic materials 0.000 title claims abstract description 40
- 239000005083 Zinc sulfide Substances 0.000 title claims abstract description 37
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000007788 liquid Substances 0.000 title claims description 42
- 238000004080 punching Methods 0.000 title description 4
- 238000005530 etching Methods 0.000 claims abstract description 34
- 230000007797 corrosion Effects 0.000 claims abstract description 27
- 238000005260 corrosion Methods 0.000 claims abstract description 27
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 52
- 239000011148 porous material Substances 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 26
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 25
- 229910017604 nitric acid Inorganic materials 0.000 claims description 25
- 238000001259 photo etching Methods 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 238000011010 flushing procedure Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229920002313 fluoropolymer Polymers 0.000 claims description 5
- 235000015073 liquid stocks Nutrition 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000011550 stock solution Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 23
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 abstract description 15
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052794 bromium Inorganic materials 0.000 abstract description 2
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000003631 wet chemical etching Methods 0.000 abstract description 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 239000000463 material Substances 0.000 description 15
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012445 acidic reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the technical field of mercury cadmium telluride/zinc sulfide infrared focal plane detectors, and provides an opening etching solution and an opening method for a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device, which avoid the problems of low selectivity and corrosion expansion in a bromine-based chemical etching method and the technical problem of poor electrode contact in a dichromate wet chemical etching method, can selectively etch the cadmium telluride/zinc sulfide double-layer passivation film on the surface of the mercury cadmium telluride in a single etching opening treatment process, simplify the opening treatment process, improve the stability of the process, and facilitate the realization of batch production of double-layer passivation focal plane devices.
Description
Technical Field
The invention belongs to the technical field of mercury cadmium telluride infrared focal plane detectors, and particularly relates to an opening corrosive liquid and an opening method applied to a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device.
Background
The infrared detection as a high-precision technology has important and wide application in various fields such as aerospace, environmental monitoring, national defense safety and the like. The tellurium-cadmium-mercury (HgCdTe) as a ternary compound semiconductor material has potential application value in the technical development field of infrared detectors, and the tellurium-cadmium-mercury (Hg 1-xCdx Te) material has the characteristics of adjustable band gap, large optical absorption coefficient, long carrier life, high electron mobility, high working temperature and the like, and the excellent performance of the tellurium-cadmium-mercury (HgCdTe) material enables the tellurium-cadmium-mercury to become an important material for manufacturing infrared focal plane devices, so that the tellurium-cadmium-mercury material is always the first choice for manufacturing infrared detectors for many years.
Surface leakage current is one of the main problems that limit the performance of the detector. The optimization of the passivation process can reduce the generation of surface electric leakage and improve the performance of the detector. Cadmium telluride (CdTe) has chemical components, lattice constants, crystal structures and the like similar to those of HgCdTe, so that defects and fixed charges at the interface of HgCdTe/CdTe can be reduced, and the CdTe has very good physical and chemical stability as a passivation dielectric film and is considered to be the most ideal surface passivation material of a HgCdTe focal plane device. Therefore, the CdTe/ZnS composite passivation technology is one of the optimal modes for replacing a single-layer ZnS passivation technology and is also the mainstream technology of the passivation technology of the high-performance tellurium-cadmium-mercury device at present.
But the HgCdTe focal plane infrared detector device passivated by CdTe has certain difficulty in metallizing the holes, which is because: because the physical and chemical properties of CdTe and HgCdTe are very similar, the conventional bromine-based wet chemical etching or dry etching method has no high selectivity, and the depth of the opening and the end position are difficult to control; the selective etching solution with dichromate component has high selectivity, but the oxidation precipitate of Hg formed by the etching solution and HgCdTe can cause poor metal-semiconductor contact performance, and the oxidation precipitate of Hg is removed by an acidic reagent, so that the corrosion of the upper ZnS electrode hole is caused. And the two layers of passivation films are respectively perforated, so that the process steps are increased, the risk of perforation corrosion is correspondingly increased, and the process controllability is reduced. The development of a double-layer passivation one-time opening technology which is difficult to spread corrosion, controllable in rate and high in corrosion selection ratio is very important for realizing the batch preparation technology of double-layer passivation focal plane devices.
Therefore, a technical solution is needed to solve the above technical problems in the prior art.
Disclosure of Invention
The invention provides an opening etching solution and an opening method for a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride detector device, which at least can solve part of problems in the prior art.
In order to solve the technical problems, according to one aspect of the present invention, the following technical solutions are provided:
the components of the open pore corrosive liquid are hydrochloric acid, nitric acid and hydrofluoric acid.
As a preferable scheme of the opening etching solution of the cadmium telluride/zinc sulfide double-layer passivation film, the invention comprises the following steps: the proportion of each component of the open pore corrosive liquid is as follows by volume: hydrochloric acid: nitric acid: hydrofluoric acid = 4:1: (0.2-2), wherein the mass percentage of hydrochloric acid is 37%, the mass percentage of nitric acid is 70%, and the mass percentage of hydrofluoric acid is 40%.
An open pore etching solution of a cadmium telluride/zinc sulfide double-layer passivation film, wherein: the open pore corrosive liquid comprises hydrochloric acid, nitric acid, hydrofluoric acid and water.
As a preferable scheme of the opening etching solution of the cadmium telluride/zinc sulfide double-layer passivation film, the invention comprises the following steps: the proportion of each component of the open pore corrosive liquid is as follows by volume: hydrochloric acid: nitric acid: hydrofluoric acid: water = 4:1: (0.2-2): (0-1), wherein the content of water is not 0, the mass percent of hydrochloric acid is 37%, the mass percent of nitric acid is 70%, and the mass percent of hydrofluoric acid is 40%.
In order to solve the above technical problems, according to another aspect of the present invention, the following technical solutions are provided:
the method for opening the cadmium telluride/zinc sulfide double-layer passivation film by adopting the opening corrosive liquid comprises the following steps:
S1: carrying out photoetching development on the device;
S2: preparing an open pore corrosive liquid;
s3: etching the hole: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid after photoetching the device sample, and flushing and drying after the corrosion is finished, thus the electrode hole perforating process of the double-layer passivation film of the device can be completed.
As a preferable scheme of the method for opening holes of the cadmium telluride/zinc sulfide double-layer passivation film by using the opening corrosion liquid, the invention comprises the following steps: the specific steps of photoetching development in the step S1 are as follows: and coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing the contact hole.
As a preferable scheme of the method for opening holes of the cadmium telluride/zinc sulfide double-layer passivation film by using the opening corrosion liquid, the invention comprises the following steps: the preparation method of the perforating corrosive liquid in the step S2 comprises the following steps: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the corrosive liquid stock solution, adding the required hydrofluoric acid, fully stirring and uniformly mixing, and slowly adding nitric acid.
As a preferable scheme of the method for opening holes of the cadmium telluride/zinc sulfide double-layer passivation film by using the opening corrosion liquid, the invention comprises the following steps: the step S3 of flushing and drying comprises the following steps: the device was rinsed in flowing deionized water and dried with nitrogen.
The beneficial effects of the invention are as follows:
1. The open pore etching solution has similar etching rates to cadmium telluride and zinc sulfide, has higher etching selection ratio compared with a mercury cadmium telluride material, can realize the selective open pore treatment of a double-layer passivation film on the surface of the mercury cadmium telluride material, and has stable physicochemical properties and controllable etching rate.
2. The double-layer passivation layer of cadmium telluride and zinc sulfide on the surface of the mercury cadmium telluride material is subjected to the open-pore corrosion treatment by adopting the open-pore corrosion solution, the double-layer passivation film can be opened at the same time by only one-step corrosion, two-step photoetching and open-pore treatment are not required to be respectively carried out on the two-layer passivation film, the process steps are reduced, and the rise of the process difficulty caused by the alignment precision is avoided.
3. The adoption of the open pore corrosive liquid for carrying out open pore corrosion treatment on the cadmium telluride and zinc sulfide double-layer passivation layer on the surface of the mercury cadmium telluride material has the characteristics of difficult corrosion expansion and no influence on metallized ohmic contact, is beneficial to improving the metal-semiconductor contact performance, improves the process stability, and is important for realizing the batch preparation process of double-layer passivation focal plane devices.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a cross-sectional view of the open pore depth of the double-layer passivation film by the open pore etching liquid according to the present invention at different etching times;
FIG. 2 is a surface topography of the double-layer passivation film after the opening treatment by the opening etching liquid of the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description will be made clearly and fully with reference to the technical solutions in the embodiments, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The invention provides the perforating corrosive liquid and the perforating method for the cadmium telluride/zinc sulfide double-layer passivation film on the surface of the mercury cadmium telluride detector device, which can selectively carry out corrosion treatment on the cadmium telluride/zinc sulfide double-layer passivation film on the surface of the mercury cadmium telluride in a single corrosion perforating treatment process, simplify the perforating treatment process, improve the stability of the process and be beneficial to realizing the batch production of double-layer passivation focal plane devices.
The opening etching solution for the cadmium telluride/zinc sulfide double-layer passivation film comprises hydrochloric acid, nitric acid and hydrofluoric acid, wherein the ratio of the components of the opening etching solution is as follows: hydrochloric acid: nitric acid: hydrofluoric acid = 4:1: (0.2-2), wherein the mass percentage of hydrochloric acid is 37%, the mass percentage of nitric acid is 70%, and the mass percentage of hydrofluoric acid is 40%.
An open pore etching solution of a cadmium telluride/zinc sulfide double-layer passivation film, wherein: the components of the open pore corrosive liquid are hydrochloric acid, nitric acid, hydrofluoric acid and water, and the proportion of the components of the open pore corrosive liquid is as follows by volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid: water = 4:1: (0.2-2): (0-1), wherein the water content is not 0, the mass percentage of hydrochloric acid is 37%, the mass percentage of nitric acid is 70%, the mass percentage of hydrofluoric acid is 40%, and the opening rate of the corrosive liquid can be adjusted by adjusting the water content in the corrosive liquid.
The method for opening the cadmium telluride/zinc sulfide double-layer passivation film by adopting the opening corrosive liquid comprises the following steps:
S1: and (3) photoetching and developing: coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing a contact hole;
s2: preparing an open pore corrosive liquid: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the corrosive liquid stock solution, adding the required hydrofluoric acid, fully stirring and uniformly mixing, and slowly adding nitric acid;
S3: etching the hole: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid after photoetching the device sample, placing the device in flowing deionized water for flushing after the corrosion is finished, and drying by nitrogen, thereby completing the process of perforating the electrode hole of the double-layer passivation film of the device.
Example 1
A method for opening holes on a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride material comprises the following steps:
S1: and (3) photoetching and developing: coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing a contact hole;
S2: preparing an open pore corrosive liquid: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the corrosive liquid stock solution, adding the required hydrofluoric acid, fully stirring and uniformly mixing, slowly adding nitric acid, and the proportion of each component of the open pore corrosive liquid is as follows by volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid = 4:1:1, a step of;
S3: etching the hole: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid after photoetching the device sample, placing the device in flowing deionized water for flushing after the corrosion is finished, and drying by nitrogen, thereby completing the process of perforating the electrode hole of the double-layer passivation film of the device.
Example 2
A method for opening holes on a cadmium telluride/zinc sulfide double-layer passivation film on the surface of a mercury cadmium telluride material comprises the following steps:
S1: and (3) photoetching and developing: coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing a contact hole;
S2: preparing an open pore corrosive liquid: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the corrosive liquid stock solution, adding the required hydrofluoric acid, fully stirring and uniformly mixing, slowly adding nitric acid, and the proportion of each component of the open pore corrosive liquid is as follows by volume ratio: hydrochloric acid: nitric acid: hydrofluoric acid: water = 4:1:0.2:0.8;
S3: etching the hole: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid after photoetching the device sample, placing the device in flowing deionized water for flushing after the corrosion is finished, and drying by nitrogen, thereby completing the process of perforating the electrode hole of the double-layer passivation film of the device.
The method for etching the holes in the embodiment 1 and the embodiment 2 is adopted to etch the double-layer passivation films with different thicknesses, and the result shows that the method can ensure the etching rate of the zinc sulfide passivation layer by adding hydrochloric acid into the etching solution and maintaining the high hydrochloric acid proportion, and meanwhile, the addition of hydrofluoric acid also reduces the etching rate of the tellurium-cadmium-mercury material and improves the etching selection ratio of the etching solution to the double-layer passivation film and the tellurium-cadmium-mercury material. The time required for the etch opening process of examples 1 and 2 to complete the opening process is shown in the following table, respectively:
| Double layer passivation film thickness | Example 1 | Example 2 |
| 3000A | 6s | 8s |
| 4500A | 8s | 12s |
| 6000A | 11s | 15s |
Meanwhile, the corrosion open hole rate of the embodiment 2 is measured and calculated, and the test result shows that the corrosion rate of the zinc sulfide and the cadmium telluride passivation layer is close to about 40-50 nm/s when the corrosion solution of the embodiment 2 is adopted for open hole treatment, and the corrosion rate of the mercury cadmium telluride material is about 10nm/s. For the epitaxy with the total thickness of 450nm of double-layer passivation, the opening depth and the surface morphology after opening treatment with different etching times are shown in figures 1-2, the etching 8s opening depth is 344nm,10s is 454nm and 30s is 645nm. The test result shows that the corrosive liquid and the corrosion method have higher corrosion selection ratio, and can meet the requirements of double-layer passivation tapping technology with difficult corrosion expansion and strong depth controllability.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the content of the present invention or direct/indirect application in other related technical fields are included in the scope of the present invention.
Claims (6)
1. The open pore corrosive liquid of the cadmium telluride/zinc sulfide double-layer passive film is characterized in that the open pore corrosive liquid comprises hydrochloric acid, nitric acid and hydrofluoric acid; the proportion of each component of the open pore corrosive liquid is as follows by volume: hydrochloric acid: nitric acid: hydrofluoric acid = 4:1: (0.2-2), wherein the mass percentage of hydrochloric acid is 37%, the mass percentage of nitric acid is 70%, and the mass percentage of hydrofluoric acid is 40%.
2. The open pore corrosive liquid of the cadmium telluride/zinc sulfide double-layer passive film is characterized in that the open pore corrosive liquid comprises hydrochloric acid, nitric acid, hydrofluoric acid and water; the proportion of each component of the open pore corrosive liquid is as follows by volume: hydrochloric acid: nitric acid: hydrofluoric acid: water = 4:1: (0.2-2): (0-1), wherein the content of water is not 0, the mass percent of hydrochloric acid is 37%, the mass percent of nitric acid is 70%, and the mass percent of hydrofluoric acid is 40%.
3. A method for opening a cadmium telluride/zinc sulfide double-layer passivation film by using the opening etching solution as claimed in any one of claims 1-2, comprising the following steps:
S1: carrying out photoetching development on the device;
S2: preparing an open pore corrosive liquid;
s3: etching the hole: and (3) perforating the double-layer passivation film of the device by using the perforating corrosive liquid after photoetching the device sample, and flushing and drying after the corrosion is finished, thus the electrode hole perforating process of the double-layer passivation film of the device can be completed.
4. The method for opening a cadmium telluride/zinc sulfide double-layer passivation film by using the opening corrosive liquid according to claim 3, wherein the specific steps of photolithography and development in the step S1 are as follows: and coating photoresist on the surface of the cadmium telluride/zinc sulfide double-layer passivation layer of the device, and carrying out photoetching and developing to form a photoresist pattern suitable for preparing the contact hole.
5. The method for opening a cadmium telluride/zinc sulfide double-layer passivation film by using the opening etching solution according to claim 3, wherein the preparation method of the opening etching solution in the step S2 is as follows: pouring hydrochloric acid into a fluoroplastic cup according to the proportion of the corrosive liquid stock solution, adding the required hydrofluoric acid, fully stirring and uniformly mixing, and slowly adding nitric acid.
6. The method for opening a cadmium telluride/zinc sulfide double-layer passivation film by using the opening corrosive liquid according to claim 3, wherein the steps of flushing and drying in the step S3 are as follows: the device was rinsed in flowing deionized water and dried with nitrogen.
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