CN105088232A - Novel Al-4% Cu etching solution - Google Patents
Novel Al-4% Cu etching solution Download PDFInfo
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- CN105088232A CN105088232A CN201410210572.2A CN201410210572A CN105088232A CN 105088232 A CN105088232 A CN 105088232A CN 201410210572 A CN201410210572 A CN 201410210572A CN 105088232 A CN105088232 A CN 105088232A
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- acid
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- etching solution
- etchant solution
- hydrofluoric
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Abstract
The invention discloses a novel Al-4% Cu etching solution. The novel Al-4% Cu etching solution comprises mixed acid and is characterized in that the mixed acid is produced by adding a certain amount of hydrofluoric acid, hydrochloric acid and nitric acid into industrial alcohol, wherein the components of the mixed acid comprise, by mass, 1.5% of the hydrofluoric acid, 10% of the hydrochloric acid, 3% of the nitric acid and 95.5% of water.
Description
Technical field
The present invention relates to a kind of new A l-4%Cu etchant solution.
Background technology
The metallographic structure of Al-4%Cu is difficult to corrosion, even if out it organizes also often show incomplete in corrosion, thus usually all adopts anode overlay film to add polarisation to observe its metallographic.But this observational technique is not only consuming time, and improves cost of manufacture.Therefore how making the etching pit of Al-4%Cu become simple and fast the same as aluminium alloy is the difficult problem waiting to solve.
Summary of the invention
The technical problem to be solved in the present invention: provide a kind of new A l-4%Cu etchant solution, to solve prior art Problems existing.
Technical scheme of the present invention: a kind of new A l-4%Cu etchant solution, comprise mixing acid, described mixing acid for adding a certain amount of hydrofluoric acid in industrial spirit, hydrochloric acid, nitric acid makes, the component of its massfraction meter is: the hydrofluoric acid of 1.5%, the hydrochloric acid of 10%, 3% nitric acid, the water of 95.5%.
Its preparation method is: the addition sequence of mixing acid for first to add nitric acid, then adds hydrochloric acid, finally adds hydrofluoric acid
Beneficial effect of the present invention: 1. Al-4%Cu through its corrosion after crystal boundary and crystal grain display clear, as long as suitable operation, do not exist tissue corrode incomplete situation; 2. Al-4%Cu is after its corrosion, can be directly used in metallographic structure and observe, and without the need to adopting anode overlay film and Pianguan County to observe, shortens the metallographic sample preparation time greatly; 3. this etchant solution is namely corrodible at normal temperatures, corrodes without the need to being heated to certain temperature again; 4. the etching time of this etchant solution is shorter, is generally 44s.New A l-4%Cu etchant solution of the present invention can make the etching pit of Al-4%Cu become simple and quick, and saves cost.
accompanying drawing illustrates:
Fig. 1 is 50 times of acid gilding phase effect figure of as cast condition Al-4%Cu;
Fig. 2 is 500 times of acid gilding phase effect figure of as cast condition Al-4%Cu.
Specific embodiment
A kind of new A l-4%Cu etchant solution, comprise mixing acid, described mixing acid for adding a certain amount of hydrofluoric acid in industrial spirit, hydrochloric acid, nitric acid makes, the component of its massfraction meter is: the hydrofluoric acid of 1.5%, the hydrochloric acid of 10%, 3% nitric acid, the water of 95.5%.And addition sequence is for first to add nitric acid, then add hydrochloric acid, finally add hydrofluoric acid.
Claims (2)
1. a new A l-4%Cu etchant solution, comprise mixing acid, it is characterized in that: described mixing acid for adding a certain amount of hydrofluoric acid in industrial spirit, hydrochloric acid, nitric acid makes, the component of its massfraction meter is: the hydrofluoric acid of 1.5%, the hydrochloric acid of 10%, 3% nitric acid, the water of 95.5%.
2. a kind of new A l-4%Cu etchant solution according to claim 1, is characterized in that: its preparation method is: the addition sequence of mixing acid for first to add nitric acid, then adds hydrochloric acid, finally adds hydrofluoric acid.
Priority Applications (1)
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CN201410210572.2A CN105088232A (en) | 2014-05-19 | 2014-05-19 | Novel Al-4% Cu etching solution |
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CN201410210572.2A CN105088232A (en) | 2014-05-19 | 2014-05-19 | Novel Al-4% Cu etching solution |
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CN105088232A true CN105088232A (en) | 2015-11-25 |
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CN201410210572.2A Pending CN105088232A (en) | 2014-05-19 | 2014-05-19 | Novel Al-4% Cu etching solution |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115873600A (en) * | 2022-11-28 | 2023-03-31 | 武汉高芯科技有限公司 | Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film |
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2014
- 2014-05-19 CN CN201410210572.2A patent/CN105088232A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115873600A (en) * | 2022-11-28 | 2023-03-31 | 武汉高芯科技有限公司 | Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film |
CN115873600B (en) * | 2022-11-28 | 2024-05-07 | 武汉高芯科技有限公司 | Punching corrosive liquid and punching method for cadmium telluride/zinc sulfide double-layer passivation film |
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Application publication date: 20151125 |
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