CN105088232A - Novel Al-4% Cu etching solution - Google Patents

Novel Al-4% Cu etching solution Download PDF

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Publication number
CN105088232A
CN105088232A CN201410210572.2A CN201410210572A CN105088232A CN 105088232 A CN105088232 A CN 105088232A CN 201410210572 A CN201410210572 A CN 201410210572A CN 105088232 A CN105088232 A CN 105088232A
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CN
China
Prior art keywords
acid
novel
etching solution
etchant solution
hydrofluoric
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Pending
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CN201410210572.2A
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Chinese (zh)
Inventor
谌红果
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Individual
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Individual
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Priority to CN201410210572.2A priority Critical patent/CN105088232A/en
Publication of CN105088232A publication Critical patent/CN105088232A/en
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Abstract

The invention discloses a novel Al-4% Cu etching solution. The novel Al-4% Cu etching solution comprises mixed acid and is characterized in that the mixed acid is produced by adding a certain amount of hydrofluoric acid, hydrochloric acid and nitric acid into industrial alcohol, wherein the components of the mixed acid comprise, by mass, 1.5% of the hydrofluoric acid, 10% of the hydrochloric acid, 3% of the nitric acid and 95.5% of water.

Description

A kind of new A l-4%Cu etchant solution
Technical field
The present invention relates to a kind of new A l-4%Cu etchant solution.
Background technology
The metallographic structure of Al-4%Cu is difficult to corrosion, even if out it organizes also often show incomplete in corrosion, thus usually all adopts anode overlay film to add polarisation to observe its metallographic.But this observational technique is not only consuming time, and improves cost of manufacture.Therefore how making the etching pit of Al-4%Cu become simple and fast the same as aluminium alloy is the difficult problem waiting to solve.
Summary of the invention
The technical problem to be solved in the present invention: provide a kind of new A l-4%Cu etchant solution, to solve prior art Problems existing.
Technical scheme of the present invention: a kind of new A l-4%Cu etchant solution, comprise mixing acid, described mixing acid for adding a certain amount of hydrofluoric acid in industrial spirit, hydrochloric acid, nitric acid makes, the component of its massfraction meter is: the hydrofluoric acid of 1.5%, the hydrochloric acid of 10%, 3% nitric acid, the water of 95.5%.
Its preparation method is: the addition sequence of mixing acid for first to add nitric acid, then adds hydrochloric acid, finally adds hydrofluoric acid
Beneficial effect of the present invention: 1. Al-4%Cu through its corrosion after crystal boundary and crystal grain display clear, as long as suitable operation, do not exist tissue corrode incomplete situation; 2. Al-4%Cu is after its corrosion, can be directly used in metallographic structure and observe, and without the need to adopting anode overlay film and Pianguan County to observe, shortens the metallographic sample preparation time greatly; 3. this etchant solution is namely corrodible at normal temperatures, corrodes without the need to being heated to certain temperature again; 4. the etching time of this etchant solution is shorter, is generally 44s.New A l-4%Cu etchant solution of the present invention can make the etching pit of Al-4%Cu become simple and quick, and saves cost.
accompanying drawing illustrates:
Fig. 1 is 50 times of acid gilding phase effect figure of as cast condition Al-4%Cu;
Fig. 2 is 500 times of acid gilding phase effect figure of as cast condition Al-4%Cu.
Specific embodiment
A kind of new A l-4%Cu etchant solution, comprise mixing acid, described mixing acid for adding a certain amount of hydrofluoric acid in industrial spirit, hydrochloric acid, nitric acid makes, the component of its massfraction meter is: the hydrofluoric acid of 1.5%, the hydrochloric acid of 10%, 3% nitric acid, the water of 95.5%.And addition sequence is for first to add nitric acid, then add hydrochloric acid, finally add hydrofluoric acid.

Claims (2)

1. a new A l-4%Cu etchant solution, comprise mixing acid, it is characterized in that: described mixing acid for adding a certain amount of hydrofluoric acid in industrial spirit, hydrochloric acid, nitric acid makes, the component of its massfraction meter is: the hydrofluoric acid of 1.5%, the hydrochloric acid of 10%, 3% nitric acid, the water of 95.5%.
2. a kind of new A l-4%Cu etchant solution according to claim 1, is characterized in that: its preparation method is: the addition sequence of mixing acid for first to add nitric acid, then adds hydrochloric acid, finally adds hydrofluoric acid.
CN201410210572.2A 2014-05-19 2014-05-19 Novel Al-4% Cu etching solution Pending CN105088232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410210572.2A CN105088232A (en) 2014-05-19 2014-05-19 Novel Al-4% Cu etching solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410210572.2A CN105088232A (en) 2014-05-19 2014-05-19 Novel Al-4% Cu etching solution

Publications (1)

Publication Number Publication Date
CN105088232A true CN105088232A (en) 2015-11-25

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Family Applications (1)

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CN201410210572.2A Pending CN105088232A (en) 2014-05-19 2014-05-19 Novel Al-4% Cu etching solution

Country Status (1)

Country Link
CN (1) CN105088232A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115873600A (en) * 2022-11-28 2023-03-31 武汉高芯科技有限公司 Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115873600A (en) * 2022-11-28 2023-03-31 武汉高芯科技有限公司 Opening corrosive liquid and opening method for cadmium telluride/zinc sulfide double-layer passive film
CN115873600B (en) * 2022-11-28 2024-05-07 武汉高芯科技有限公司 Punching corrosive liquid and punching method for cadmium telluride/zinc sulfide double-layer passivation film

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Application publication date: 20151125

WD01 Invention patent application deemed withdrawn after publication