CN115702487A - 场效应晶体管及其制造方法 - Google Patents

场效应晶体管及其制造方法 Download PDF

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Publication number
CN115702487A
CN115702487A CN202080102318.4A CN202080102318A CN115702487A CN 115702487 A CN115702487 A CN 115702487A CN 202080102318 A CN202080102318 A CN 202080102318A CN 115702487 A CN115702487 A CN 115702487A
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China
Prior art keywords
insulating
layer
semiconductor material
effect transistor
field effect
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Pending
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CN202080102318.4A
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English (en)
Inventor
万光星
黄威森
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN115702487A publication Critical patent/CN115702487A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type

Abstract

本申请的实施例提供一种场效应晶体管及其制造方法，涉及半导体技术领域，能够降低栅极与源极、漏极间的寄生电容。制作方法，包括：在半导体衬底上形成支撑结构，支撑结构包括交替设置的第一半导体材料层和第二半导体材料层，支撑结构的两侧设置有隔离层；沿着隔离层与支撑结构的交界形成覆盖支撑结构的假栅结构，假栅结构在栅长方向的长度小于第一半导体材料层在所述栅长方向的长度，栅长方向用于指示场效应晶体管中载流子的输运方向；沿栅长方向，在假栅结构的两侧沉积第一绝缘层；沿所述栅长方向，去除第二半导体材料层中除牺牲层以外的区域，形成绝缘凹槽，绝缘凹槽的内部镂空、填充有空气。

Description

PCT国内申请，说明书已公开。

Claims (12)

  1. PCT国内申请，权利要求书已公开。
CN202080102318.4A 2020-08-11 2020-08-11 场效应晶体管及其制造方法 Pending CN115702487A (zh)

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PCT/CN2020/108485 WO2022032488A1 (zh) 2020-08-11 2020-08-11 场效应晶体管及其制造方法

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CN115702487A true CN115702487A (zh) 2023-02-14

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CN202080102318.4A Pending CN115702487A (zh) 2020-08-11 2020-08-11 场效应晶体管及其制造方法

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CN (1) CN115702487A (zh)
WO (1) WO2022032488A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377006B (zh) * 2022-10-21 2023-02-28 广东省大湾区集成电路与系统应用研究院 一种三维堆叠半导体器件的制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
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KR102315275B1 (ko) * 2015-10-15 2021-10-20 삼성전자 주식회사 집적회로 소자 및 그 제조 방법
KR102294932B1 (ko) * 2016-04-25 2021-09-17 어플라이드 머티어리얼스, 인코포레이티드 수평 게이트 올어라운드 디바이스 나노와이어 에어 갭 스페이서 형성
CN111370466A (zh) * 2016-11-21 2020-07-03 华为技术有限公司 一种场效应晶体管及其制作方法
US10361278B2 (en) * 2017-08-30 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10553696B2 (en) * 2017-11-21 2020-02-04 International Business Machines Corporation Full air-gap spacers for gate-all-around nanosheet field effect transistors
US11177344B2 (en) * 2019-09-25 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device with air gap spacer and fabrication methods thereof

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WO2022032488A1 (zh) 2022-02-17

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