CN115602603A - 贴合晶圆的制造方法 - Google Patents

贴合晶圆的制造方法 Download PDF

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Publication number
CN115602603A
CN115602603A CN202210800956.4A CN202210800956A CN115602603A CN 115602603 A CN115602603 A CN 115602603A CN 202210800956 A CN202210800956 A CN 202210800956A CN 115602603 A CN115602603 A CN 115602603A
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CN
China
Prior art keywords
wafer
active layer
support substrate
bonding
laser mark
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Pending
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CN202210800956.4A
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English (en)
Chinese (zh)
Inventor
冈部秀光
广重毅
中尾博之
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Sumco Corp
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Sumco Corp
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Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN115602603A publication Critical patent/CN115602603A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN202210800956.4A 2021-07-08 2022-07-08 贴合晶圆的制造方法 Pending CN115602603A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-113847 2021-07-08
JP2021113847A JP2023010050A (ja) 2021-07-08 2021-07-08 貼り合わせウェーハの製造方法

Publications (1)

Publication Number Publication Date
CN115602603A true CN115602603A (zh) 2023-01-13

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ID=84843574

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210800956.4A Pending CN115602603A (zh) 2021-07-08 2022-07-08 贴合晶圆的制造方法

Country Status (2)

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JP (1) JP2023010050A (ja)
CN (1) CN115602603A (ja)

Also Published As

Publication number Publication date
JP2023010050A (ja) 2023-01-20

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