CN115602603A - Method for manufacturing bonded wafer - Google Patents
Method for manufacturing bonded wafer Download PDFInfo
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- CN115602603A CN115602603A CN202210800956.4A CN202210800956A CN115602603A CN 115602603 A CN115602603 A CN 115602603A CN 202210800956 A CN202210800956 A CN 202210800956A CN 115602603 A CN115602603 A CN 115602603A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
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Abstract
The purpose of the present invention is to provide a method for manufacturing a bonded wafer, in which a support substrate wafer and an active layer wafer are bonded via an insulating film, and generation of a slip and generation of voids are suppressed. The method comprises the following steps: a laser mark printing step of printing a laser mark on a surface of each of the support substrate wafer and the active layer wafer opposite to the bonding surface; and a bonding step of bonding surfaces, which are bonding surfaces of the support substrate wafer and the active layer wafer, the bonding surfaces being surfaces opposite to the surfaces on which the laser marks are printed in the laser mark printing step, to each other via an insulating film. The method also comprises the following steps: and an uneven shape determination step which is performed before the laser mark printing step and determines the orientation of the unevenness of each of the support substrate wafer and the active layer wafer. In the laser mark printing step, the laser marks are printed on the surfaces of the support substrate wafer and the active layer wafer that are determined to be the concave side in the concave-convex shape determining step.
Description
Technical Field
The invention relates to a manufacturing method of a bonded wafer.
Background
Conventionally, a bonded SOI (Silicon On Insulator) wafer in which an active layer wafer and a support substrate wafer are bonded via an oxide film is known.
In such a bonded wafer, voids may be generated at the bonding interface.
In contrast, for example, patent document 1 proposes the following technique: after the 2-piece wafer is deformed into a convex shape, the convex surfaces are bonded to each other, thereby suppressing the occurrence of voids.
Patent document 1: japanese patent laid-open No. 2000-348992.
However, in the method described in patent document 1, since the wafer is formed to have a convex shape by applying an external force, strain may be generated inside the wafer, and slip (crystal dislocation) may be generated in the bonded wafer.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a method for manufacturing a bonded wafer capable of suppressing generation of a slip and generation of voids.
The gist of the present invention is as follows.
(1) A method for manufacturing a bonded wafer by bonding a support substrate wafer and an active layer wafer via an insulating film, characterized in that,
the method comprises the following steps:
a laser mark printing step of printing a laser mark on a surface of each of the support substrate wafer and the active layer wafer opposite to the bonding surface; and
a bonding step of bonding the bonding surfaces of the support substrate wafer and the active layer wafer, which are the surfaces opposite to the surfaces on which the laser marks are printed in the laser mark printing step, to each other via the insulating film,
the method further comprises the following steps:
a concave-convex shape determination step of determining the orientation of the concave-convex of each of the support substrate wafer and the active layer wafer, performed before the laser mark printing step,
in the laser mark printing step, the laser mark is printed on the surface of each of the support substrate wafer and the active layer wafer which is determined to be the concave side in the concave-convex shape determining step.
(2) The method for manufacturing a bonded wafer according to the above (1), wherein,
in the concave-convex shape determination step, the shape is determined using Bow as an index.
(3) The method for manufacturing a bonded wafer according to the above (1) or (2),
in the bonding step, the support substrate wafer and the active layer wafer are brought into contact with each other from the vicinity of the center of the bonding surface.
(4) The method for manufacturing a bonded wafer according to any one of the above (1) to (3),
the concave-convex shape determination step is performed after the polishing step.
Effects of the invention
According to the present invention, it is possible to provide a method for manufacturing a bonded wafer in which generation of a slip and generation of voids can be suppressed.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a bonded wafer according to an embodiment of the present invention.
Fig. 2 is a flowchart of a conventional method for manufacturing a bonded wafer.
Fig. 3 is a schematic diagram for explaining Bow.
Fig. 4 is a schematic diagram for explaining Warp.
FIG. 5 is a graph showing the evaluation results of example 1.
FIG. 6 is a graph showing the evaluation results of example 2.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail by way of example with reference to the accompanying drawings.
Fig. 1 is a flowchart of a method for manufacturing a bonded wafer according to an embodiment of the present invention. Fig. 2 is a flowchart of a conventional method for manufacturing a bonded wafer. In fig. 2, the number of steps is skipped between step S204 and step S207 for comparison with the flow of fig. 1.
As shown in fig. 1, in the method for manufacturing a bonded wafer according to the present embodiment, first, a silicon single crystal ingot is sliced (slicing step: step S101). For growing a silicon single crystal ingot, a known method such as the CZ method or the Floating Zone (FZ) method can be used. In the growth of the single crystal silicon ingot, the oxygen concentration, the carbon concentration, the nitrogen concentration, and the like can be appropriately adjusted so that a silicon wafer collected from the grown silicon ingot has desired characteristics. Further, the conductivity type can be made n-type or p-type by adding an appropriate dopant. As for the slicing method, a known method can also be used.
Then, the silicon wafer obtained by slicing is subjected to chamfering processing (chamfering: step S102). Next, the silicon wafer subjected to the chamfering process is polished (polishing step: step S103). Subsequently, the silicon wafer subjected to the polishing process is subjected to chamfering again (chamfering: step S104). These chamfering and polishing treatments can also be performed by a known method. Using the silicon wafer having completed these processes, a support substrate wafer and an active layer wafer are prepared.
Subsequently, as shown in fig. 1 (compare with fig. 2), the orientation of the irregularities of each of the support substrate wafer and the active layer wafer is determined (irregular shape determining step: step S105). The concave-convex shape determining step is performed before the laser mark printing step described later. That is, in the uneven shape determining step, the uneven shapes (as the overall shape) of the support substrate wafer and the active layer wafer after the chamfering process and the polishing process in steps S102 to S104 are measured, and it is determined which surface is on the convex (concave) side.
For example, in the uneven shape determination step, it is preferable to determine the shape using Bow as an index. Here, "Bow" and "Warp" described later have a measurement method defined in JEIDA-43-1999 and ASTM F1530-94. Then, bow or Warp can be measured by a flatness measuring instrument manufactured by KLA, for example.
Fig. 3 is a schematic diagram for explaining Bow. As shown in fig. 3, it is possible to determine that the value of the displacement from the reference surface in the direction perpendicular to the reference surface at the wafer center is positive as the convex side and negative as the concave side. The reference plane may be a plane passing through 3 points provided at equal intervals in the circumferential direction, which is separated by 3mm from the outer edge of the wafer to the inner side in the radial direction, or may be a plane of best fit to the entire surface of the wafer (for example, a plane in which an error by the least square method is minimized). The same applies to the later-described reference plane of Warp. The region 3mm inward in the radial direction from the outer periphery of the wafer is excluded.
It is preferable to measure the Warp of the support substrate wafer and the Warp of the active layer wafer immediately before the step of determining the uneven shape (see fig. 4). If the degree of the convex shape is too large, there is a possibility that a transfer error of the device (erroneous adsorption of a handling arm) or bonding displacement may occur due to bonding naturally starting from the vicinity of the center before aligning 2 wafers at the time of bonding, and therefore, for example, it is possible to enter only a qualified wafer into the concave/convex shape determination step with a wafer Warp of 30 μm or less as a qualification standard for the wafer. In addition, in the measurement of Warp, a region 3mm inward in the radial direction from the outer periphery of the wafer is also excluded.
Next, as shown in fig. 1, the support substrate wafer and the active layer wafer, which are determined to be convex on the surface on which the laser mark is printed (in the current position state), are inverted so that the surface facing the laser light source is concave (convex wafer inversion: step S106).
This inversion can be performed using a known transfer arm for a wafer or the like. In addition, since the position of the laser light source side may be changed, the convex wafer is not always inverted.
Next, laser marks are printed on the surfaces of the support substrate wafer and the active layer wafer, which are opposite to the bonding surfaces (laser mark printing step: step S107). Therefore, in the laser mark printing step, the laser marks are printed on the surfaces of the support substrate wafer and the active layer wafer which are determined to be the concave side in the concave-convex shape determining step (step S104).
Printing of the laser mark can be carried out by known methods, and as a laser light source for laser marking, for example, an infrared laser or CO can be used 2 Laser, YLF laser (solid laser). Among them, a YLF laser is preferably used because thermal damage can be suppressed to be low. The beam diameter or intensity can be adjusted appropriately.
Subsequently, as shown in FIG. 1, the support substrate wafer and the active layer wafer on which the laser mark is printed are etched (etching step: step S108). Subsequently, the etched support substrate wafer and active layer wafer are ground (grinding: step S109), and then the ground support substrate wafer and active layer wafer are edge-polished (edge-polished: step S110). Subsequently, the edge-polished support substrate wafer and the active layer wafer are polished (polishing: step S111). Subsequently, the polished support substrate wafer and active layer wafer are cleaned (cleaning: step S112). Subsequently, the cleaned support substrate wafer and active layer wafer are subjected to measurement and inspection for inspecting various qualities of the wafers (measurement and inspection: step S113). Then, the wafer for the support substrate and the wafer for the active layer subjected to the measurement inspection are subjected to a finish cleaning (a finish cleaning: step S114). These etching steps, grinding, edge polishing, cleaning, measurement inspection, and finish cleaning can be performed by a known method.
Subsequently, bonding surfaces, which are surfaces of the support substrate wafer and the active layer wafer opposite to the surface on which the laser mark is printed in the laser mark printing step, are bonded to each other via an insulating film (bonding step: step S115). The insulating film can be made of SiO 2 And the like known materials.
Bonding can be performed by a known method, and in the bonding step, the support substrate wafer and the active layer wafer are preferably bonded so as to gradually come into contact with each other from the vicinity of the center of the bonding surfaces. This is because generation of voids can be further suppressed.
According to the method of manufacturing a bonded wafer of the present embodiment, as described above, before the laser mark printing step, the orientation of the irregularities of each of the support substrate wafer and the active layer wafer is determined, and then the laser mark is printed on the surface of each of the support substrate wafer and the active layer wafer opposite to the bonding surface. In this way, in the laser mark printing step, the laser marks are printed on the surfaces of the support substrate wafer and the active layer wafer on the side determined to be the concave side in the concave-convex shape determining step.
In the bonding step, bonding surfaces of the support substrate wafer and the active layer wafer, which are surfaces opposite to the surfaces on which the laser marks are printed in the laser mark printing step, are bonded to each other via an insulating film. Accordingly, the convex surface of the support substrate wafer and the convex surface of the active layer wafer are reliably bonded to each other, and therefore, generation of voids can be more reliably suppressed (for example, compared to a case where bonding is performed without considering the orientation of the irregularities).
According to the method for manufacturing a bonded wafer of the present embodiment, since it is not necessary to apply an external force for deforming the shapes of the support substrate wafer and the active layer wafer, it is possible to suppress occurrence of a slip.
As described above, according to the method for manufacturing a bonded wafer of the present embodiment, it is possible to provide a method for manufacturing a bonded wafer capable of suppressing generation of a slip and generation of voids.
Among them, in the uneven shape discrimination step, it is preferable to discriminate with Bow as an index. This is because Bow is suitable as an index of the uneven shape that affects bonding because it is measured at the center point of the wafer with respect to the displacement from the reference plane.
In the bonding step, it is preferable that the support substrate wafer and the active layer wafer are brought into contact with each other gradually from the vicinity of the center of the bonding surfaces. This is because generation of voids can be further suppressed.
The uneven shape determination step is preferably performed after the polishing step. If the uneven shape discrimination step is performed before the polishing step, there is a possibility that the wafer shape is not in the same state as the result of discrimination of the uneven shape after polishing due to the influence of the slicing step on the wafer shape. In contrast, such a problem can be avoided by performing the uneven shape determination step after the polishing step.
Examples
The following examples of the present invention are described, but the present invention is not limited to the following examples.
(example 1)
The generation rates of voids were compared between the inventive example in which a bonded wafer was produced by the production process shown in fig. 1 and the comparative example in which a bonded wafer was produced by the conventional process shown in fig. 2. The inspection of the voids was performed by infrared interference (IR method) and ultrasonic inspection. In the determination of the unevenness, 9700 UltraGage manufactured by KLA was used with Bow as an index.
FIG. 5 is a graph showing the evaluation results of example 1.
As shown in fig. 5, when the generation rate of the lamination void defect in the comparative example is 1, the generation rate can be suppressed to 0.05 (the failure rate is comparative example 23%, invention example 1.1%).
(example 2)
For the wafers with known Bow values, 92 wafers were prepared for the active layer wafer and the support substrate wafer, and bonding was performed by the flow of fig. 1, and the presence or absence of voids was confirmed.
As a result, as shown in fig. 6, it was confirmed that void defects occurred in 2 bonded wafers, and all of them were combinations of wafers having a negative Bow value.
Bow value (wafer for active layer, wafer for supporting substrate)
Poor porosity (-1.10, 0.11) of the → 1 st tablet
Poor porosity (-0.23, -1.89) of → 2 nd tablet
(unit μm).
The poor porosity wafer results for sheet 1 indicate that even if one is concave and the other is convex (a positive Bow value), there is a risk of voids being created.
Claims (5)
1. A method for manufacturing a bonded wafer by bonding a support substrate wafer and an active layer wafer via an insulating film,
the method comprises the following steps:
a laser mark printing step of printing a laser mark on a surface of each of the support substrate wafer and the active layer wafer opposite to the bonding surface; and
a bonding step of bonding the bonding surfaces of the support substrate wafer and the active layer wafer, which are surfaces opposite to the surfaces on which the laser marks are printed in the laser mark printing step, to each other via the insulating film,
the method further comprises the following steps:
an uneven shape determination step which is performed before the laser mark printing step and determines the orientation of the unevenness of each of the support substrate wafer and the active layer wafer,
in the laser mark printing step, the laser mark is printed on the surface of each of the support substrate wafer and the active layer wafer which is determined to be the concave side in the concave-convex shape determining step.
2. The method of manufacturing a bonded wafer according to claim 1,
in the concave-convex shape determination step, the shape is determined using Bow as an index.
3. The method for manufacturing a bonded wafer according to claim 1 or 2,
in the bonding step, the support substrate wafer and the active layer wafer are brought into contact with each other from the vicinity of the center of the bonding surface.
4. The method for manufacturing a bonded wafer according to claim 1 or 2,
the concave-convex shape determination step is performed after the polishing step.
5. The method according to claim 3, wherein the wafer is bonded to the wafer,
the concave-convex shape determination step is performed after the polishing step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-113847 | 2021-07-08 | ||
| JP2021113847A JP2023010050A (en) | 2021-07-08 | 2021-07-08 | Manufacturing method of laminated wafer |
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| Publication Number | Publication Date |
|---|---|
| CN115602603A true CN115602603A (en) | 2023-01-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210800956.4A Pending CN115602603A (en) | 2021-07-08 | 2022-07-08 | Method for manufacturing bonded wafer |
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| JP (1) | JP2023010050A (en) |
| CN (1) | CN115602603A (en) |
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