CN1156024C - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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Publication number
CN1156024C
CN1156024C CNB981089410A CN98108941A CN1156024C CN 1156024 C CN1156024 C CN 1156024C CN B981089410 A CNB981089410 A CN B981089410A CN 98108941 A CN98108941 A CN 98108941A CN 1156024 C CN1156024 C CN 1156024C
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CN
China
Prior art keywords
photoelectric conversion
solar cell
substrate
alloy
flexible substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB981089410A
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English (en)
Chinese (zh)
Other versions
CN1204159A (zh
Inventor
ʦ�Ծ���
师冈久雄
栗原克树
三浦贵光
松濑充贵
山田宽
晃井康行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, TDK Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1204159A publication Critical patent/CN1204159A/zh
Application granted granted Critical
Publication of CN1156024C publication Critical patent/CN1156024C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CNB981089410A 1997-05-16 1998-05-18 太阳能电池及其制造方法 Expired - Lifetime CN1156024C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP143078/1997 1997-05-16
JP9143078A JPH10321883A (ja) 1997-05-16 1997-05-16 太陽電池およびその作製方法
JP143078/97 1997-05-16

Publications (2)

Publication Number Publication Date
CN1204159A CN1204159A (zh) 1999-01-06
CN1156024C true CN1156024C (zh) 2004-06-30

Family

ID=15330409

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB981089410A Expired - Lifetime CN1156024C (zh) 1997-05-16 1998-05-18 太阳能电池及其制造方法

Country Status (6)

Country Link
US (1) US6040520A (enExample)
JP (1) JPH10321883A (enExample)
KR (1) KR100589866B1 (enExample)
CN (1) CN1156024C (enExample)
DE (1) DE19821221A1 (enExample)
TW (1) TW420879B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380710B1 (en) * 1999-07-09 2002-04-30 Sony Corporation Photovoltaic-charged secondary battery device
US7022910B2 (en) * 2002-03-29 2006-04-04 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
SE0103740D0 (sv) * 2001-11-08 2001-11-08 Forskarpatent I Vaest Ab Photovoltaic element and production methods
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
JP4152574B2 (ja) 2000-09-25 2008-09-17 株式会社半導体エネルギー研究所 薄膜の成膜方法および半導体装置の製造方法
US20070251570A1 (en) * 2002-03-29 2007-11-01 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
JP5350587B2 (ja) * 2003-03-24 2013-11-27 メルク パテント ゲーエムベーハー メッシュ電極を備える光電セル
DE10317020A1 (de) * 2003-04-11 2004-11-11 Rehau Ag + Co. Photovoltaisches Modul, Satz aus mindestens zwei photovoltaischen Modulen sowie weiteres photovoltaisches Modul
WO2005086088A1 (en) 2004-03-04 2005-09-15 Semiconductor Energy Laboratory Co., Ltd. Id chip and ic card
US20070224464A1 (en) * 2005-03-21 2007-09-27 Srini Balasubramanian Dye-sensitized photovoltaic cells
US20070193621A1 (en) * 2005-12-21 2007-08-23 Konarka Technologies, Inc. Photovoltaic cells
EP2139616B1 (en) * 2007-04-02 2018-08-29 Merck Patent GmbH Novel electrode
ES2522582T3 (es) * 2007-08-31 2014-11-17 Aperam Alloys Imphy Sustrato metálico texturizado cristalográficamente, dispositivo texturizado cristalográficamente, célula y módulo fotovoltaico que comprenden un dispositivo de este tipo, y procedimiento de depósito de capas finas
WO2009158548A2 (en) * 2008-06-25 2009-12-30 Robert Stancel Tensioned mounting of solar panels
US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US20110048517A1 (en) * 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US20100310775A1 (en) * 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
US9781783B2 (en) 2011-04-15 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, light-emitting system, and display system
DE102011114396A1 (de) 2011-09-20 2013-03-21 Solon Se Verfahren zur elektrischen Reihenverschaltung von Solarzellen
KR101374690B1 (ko) 2011-11-16 2014-03-31 한국생산기술연구원 Ｃｉｇｓ 태양전지용 철-니켈 합금 금속 포일 기판재
NL2014040B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method of making a curent collecting grid for solar cells.
KR101858570B1 (ko) * 2017-01-24 2018-05-16 국민대학교산학협력단 창호형 박막 태양전지 및 이의 제조방법
KR102573640B1 (ko) * 2017-09-19 2023-09-04 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 솔라 블라인드용 태양전지 모듈

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
JPH01138787A (ja) * 1987-11-25 1989-05-31 Sumitomo Electric Ind Ltd フレキシブル配線基板
DE69026339T2 (de) * 1989-11-13 1996-08-14 Fujitsu Ltd Josephson-Übergang-Apparat
US5331183A (en) * 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
US5538902A (en) * 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
JP3497538B2 (ja) * 1993-10-29 2004-02-16 旭化成ケミカルズ株式会社 フィルム状アモルファスシリコン太陽電池
JPH07135331A (ja) * 1993-11-10 1995-05-23 Asahi Chem Ind Co Ltd フィルム状太陽電池
US5733381A (en) * 1993-12-22 1998-03-31 Fuji Electric Co., Ltd. Thin-film solar cell array and method of manufacturing same
JP3239657B2 (ja) * 1994-12-28 2001-12-17 富士電機株式会社 薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
CN1204159A (zh) 1999-01-06
KR100589866B1 (ko) 2006-10-19
DE19821221A1 (de) 1998-11-19
KR19980087070A (ko) 1998-12-05
JPH10321883A (ja) 1998-12-04
TW420879B (en) 2001-02-01
US6040520A (en) 2000-03-21

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