CN115570461A - 层叠晶片的加工方法 - Google Patents
层叠晶片的加工方法 Download PDFInfo
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Abstract
本发明提供层叠晶片的加工方法,即使在从第2晶片去除与分割预定线对应的区域而使第1晶片的分割预定线露出的情况下也不降低品质。该层叠晶片是将第2晶片层叠在第1晶片的正面上而得的,该加工方法包含如下的工序:改质层形成工序,将对于该第2晶片具有透过性的波长的激光光线的聚光点从该第2晶片的上表面侧定位于限定分割预定线的两条边的内部而进行照射,沿着分割预定线在第2晶片的内部形成至少两条改质层;带粘贴工序,将带粘贴在第2晶片的上表面上;和分割预定线露出工序,将该带从该第2晶片的上表面剥离而将沿着该分割预定线形成有该改质层的与分割预定线对应的边角料从该第2晶片去除,使形成于该第1晶片的正面的分割预定线露出。
Description
技术领域
本发明涉及层叠晶片的加工方法,该层叠晶片是在由交叉的多条分割预定线划分而在正面上形成有多个器件的第1晶片的正面上层叠第2晶片而得的。
背景技术
由交叉的多条分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片通过切割装置、激光加工装置而分割成各个器件芯片,分割得到的器件芯片用于移动电话、个人计算机等电子设备。
另外,对于在由交叉的多条分割预定线划分而在正面上形成有多个器件的第1晶片的正面上层叠第2晶片而得的SOI晶片等层叠晶片,也沿着该分割预定线进行分割而形成两层的器件芯片(例如参照专利文献1)。
专利文献1:日本特开2015-230971号公报
在对上述的层叠晶片进行加工时,有时实施如下的加工工序:将与该分割预定线对应的第2晶片的区域去除而使形成于第1晶片的正面的分割预定线露出。此时,当使用切削刀具从第2晶片去除与该分割预定线对应的区域时,存在切削刀具与第1晶片接触而导致品质降低的问题。为了应对该问题,需要一边将第2晶片侧的该区域去除一边调整切削刀具的切入深度以便不与第1晶片接触,但实际上是极其困难的。另外,在通过切削刀具对第2晶片进行切削的情况下,还存在切削水从第2晶片的切削槽浸入第1晶片侧而使器件的品质降低的问题。
发明内容
由此,本发明的目的在于提供层叠晶片的加工方法,即使在从第2晶片去除与分割预定线对应的区域而使形成于第1晶片的正面的分割预定线露出的情况下,也不产生品质的降低。
根据本发明,提供层叠晶片的加工方法,该层叠晶片是在由交叉的多条分割预定线划分而在正面上形成有多个器件的第1晶片的正面上层叠第2晶片而得的,其中,该层叠晶片的加工方法具有如下的工序:改质层形成工序,将对于该第2晶片具有透过性的波长的激光光线的聚光点从该第2晶片的上表面侧定位于限定该分割预定线的两条边的内部而进行照射,沿着该分割预定线在第2晶片的内部形成至少两条改质层;带粘贴工序,将带粘贴在该第2晶片的上表面上;以及分割预定线露出工序,将该带从该第2晶片的上表面剥离,将沿着该分割预定线形成有该改质层的与该分割预定线对应的边角料从该第2晶片去除,使形成于该第1晶片的正面的该分割预定线露出。
优选该带粘贴工序包含如下的工序:紫外线硬化型带粘贴步骤,将粘接力通过紫外线的照射而降低的紫外线硬化型带粘贴于该第2晶片的上表面上;以及紫外线照射步骤,对该紫外线硬化型带中的与该分割预定线对应的区域以外的区域照射紫外线而使粘接力降低。优选使在该带粘贴工序中使用的带为包含聚烯烃的热压接带,将敷设于该第2晶片的上表面的该热压接带进行加热、按压而进行粘贴。
可以在该改质层形成工序之前实施对该第2晶片的上表面进行磨削或研磨而使该第2晶片薄化的薄化工序,也可以在该改质层形成工序之后实施对该第2晶片的上表面进行磨削或研磨而使该第2晶片薄化的薄化工序。
根据本发明的层叠晶片的加工方法,不使用切削刀具而能够从第2晶片去除与第1晶片的分割预定线对应的区域,从而消除切削刀具与第1层叠晶片1接触而使品质降低的问题。另外,在去除与第1晶片的分割预定线对应的区域时不使用切削水,因此也消除了由于切削水而使品质降低的问题。
附图说明
图1是作为本实施方式的被加工物的层叠晶片的分解立体图。
图2是示出薄化工序的实施方式的立体图。
图3是激光加工装置的整体立体图。
图4的(a)是示出改质层形成工序的实施方式的立体图,图4的(b)是第1晶片的放大俯视图,图4的(c)是改质层形成工序时的层叠晶片的剖视图。
图5是示出薄化工序的其他实施方式的立体图。
图6是示出带粘贴工序的紫外线硬化型带粘贴步骤的实施方式的立体图。
图7是示出带粘贴工序的紫外线照射步骤的实施方式的立体图。
图8是示出分割预定线露出工序的实施方式的立体图。
标号说明
1:激光加工装置;2:保持单元;2a:X轴方向可动板;2b:导轨;2c:Y轴方向可动板;2d:支柱;2e:卡盘工作台;2f:保持面;2g:罩板;3:基台;4:移动机构;41:X轴移动机构;42:Y轴移动机构;43、45:电动机;44、46:滚珠丝杠;5:框体;5a:垂直壁部;5b:水平壁部;6:激光光线照射单元;6a:聚光器;7:拍摄单元;10:第1晶片;10a:正面;10b:背面;12:器件;14:分割预定线;20:第2晶片;20a:正面;20b:背面;30:磨削装置;31:保持单元;32:磨削单元;36:磨削磨轮;37:磨削磨具;50:紫外线照射装置;50a:紫外线照射面;100:改质层;102、104:改质层;120:掩模部件;122:环状框架;124:格子部件;T1:粘接带;T2:带;W:层叠晶片。
具体实施方式
以下,参照附图详细说明本发明实施方式的层叠晶片的加工方法。
在图1中示出在本实施方式中作为被加工物的层叠晶片W的立体图。如在图1的上方分解而示出那样,层叠晶片W是在第1晶片10上层叠第2晶片20而得的层叠晶片。第1晶片10例如是硅的晶片,如图1所示,由分割预定线14划分而在正面10a上形成有多个器件12。另外,第2晶片20与第1晶片10同样地例如是硅的晶片,在朝向下方的正面20a侧由交叉的多条分割预定线划分而形成有省略图示的多个器件。在将第1晶片10和第2晶片20层叠时,如图所示,将第2晶片20的正面20a侧朝向第1晶片10的正面10a进行贴合而成为一体。形成于第1晶片10的正面10a的分割预定线14和形成于第2晶片20的正面20a的分割预定线形成于对应的位置。由此,在使第1晶片10和第2晶片20成为一体时,使形成于两者的凹口的位置对齐等来调整朝向而进行贴合(参照图1的下部),按照第1晶片10的分割预定线14与第2晶片20的分割预定线完全一致的方式进行层叠而成为一体。另外,在第1晶片10与第2晶片20之间形成有氧化膜等,由此两者牢固地一体化。如上所述,若准备了通过本实施方式进行加工的层叠晶片W,则实施以下说明的加工方法。
在实施本实施方式的层叠晶片的加工方法时,若有需要,则可以预先实施以下所说明的对第2晶片20的上表面即背面20b进行磨削或研磨而进行薄化的薄化工序。参照图2,对该薄化工序进行说明。
在图2中示出为了实施薄化工序而使用的磨削装置30(仅示出一部分)。磨削装置30具有:保持单元31,其对层叠晶片W进行保持;以及磨削单元32,其对保持单元31所保持的层叠晶片W进行磨削。
保持单元31例如具备具有通气性的保持面(省略图示),与省略图示的吸引源连接,能够通过该保持面对层叠晶片W进行吸引保持。磨削单元32具有:旋转主轴34,其通过未图示的旋转驱动机构进行旋转;磨轮安装座35,其安装于旋转主轴34的下端;以及磨削磨轮36,其安装于磨轮安装座35的下表面上,在磨削磨轮36的下表面上呈环状配设有多个磨削磨具37。
若将层叠晶片W搬送至磨削装置30且使第1晶片10侧朝向下方而载置于保持单元31上并进行吸引保持,则如图2所示,层叠晶片W定位于磨削单元32的下方。接着,使磨削单元32的旋转主轴34在图中箭头R1所示的方向上以例如6000rpm进行旋转,并且使保持单元31在箭头R2所示的方向上以例如300rpm进行旋转。并且,一边通过未图示的磨削水提供单元向第2晶片20的背面20b上提供磨削水,一边使磨削磨具37与第2晶片20的背面20b接触,并将磨削磨轮36以例如1μm/秒的磨削进给速度朝向下方进行磨削进给。此时,能够一边通过未图示的接触式的测量仪测量层叠晶片W的厚度一边进行磨削,将层叠晶片W的第2晶片20的背面20b磨削规定的量。若磨削了规定的量,则根据需要实施清洗、干燥工序等而完成薄化工序。在上述薄化工序中,在将第2晶片20的背面20b侧薄化的量少的情况下或需要将第2晶片20的背面20b侧加工成镜面的情况下,也可以代替上述磨削单元32或者在磨削单元32的基础上使用省略图示的研磨装置,通过研磨垫等对第2晶片20的背面20b侧进行研磨而使第2晶片20薄化。另外,在形成层叠晶片W时第2晶片20的厚度已经成为期望的厚度的情况下,可以省略上述薄化工序。
若准备了上述层叠晶片W,则实施以下说明的改质层形成工序。在实施改质层形成工序时,如图3所示,将层叠晶片W借助粘接带T1而保持于环状的框架F,并搬送至图示的激光加工装置1。
在图3中示出适合实施本发明的加工方法的激光加工装置1的整体立体图。激光加工装置1具有保持单元2、基台3、移动机构4、激光光线照射单元6、拍摄单元7以及未图示的控制单元。
保持单元2包含:矩形状的X轴方向可动板2a,其以在X轴方向上移动自如的方式搭载于基台3上;矩形状的Y轴方向可动板2c,其以沿着X轴方向可动板2a上的导轨2b、2b在Y轴方向上移动自如的方式搭载;圆筒状的支柱2d,其固定于Y轴方向可动板2c的上表面上;以及矩形状的罩板2g,其固定于支柱2d的上端。在罩板2g上配设有卡盘工作台2e,该卡盘工作台2e是通过形成于罩板2g上的长孔而向上方延伸的圆形状的部件,构成为能够通过未图示的旋转驱动单元进行旋转。卡盘工作台2e具有保持面2f,该保持面2f由具有通气性的多孔质材料形成,保持面2f由X轴方向和Y轴方向限定。保持面2f通过经由支柱2d的流路而与未图示的吸引单元连接。另外,X轴方向是图3中箭头X所示的方向,Y轴方向是箭头Y所示的方向,是与X轴方向垂直的方向。由X轴方向和Y轴方向限定的平面实质上是水平的。
移动机构4具有:X轴移动机构41,其使保持单元2的卡盘工作台2e与激光光线照射单元6和拍摄单元7在X轴方向上相对地移动;以及Y轴移动机构42,其使保持单元2的卡盘工作台2e相对于拍摄单元7在Y轴方向上相对地移动。X轴移动机构41具有:滚珠丝杠44,其在基台3上沿X轴方向延伸;以及电动机43,其与滚珠丝杠44的一个端部连结。滚珠丝杠44的螺母部(省略图示)形成于X轴方向可动板2a的下表面上。并且,X轴移动机构41通过滚珠丝杠44将电动机43的旋转运动转换成直线运动而传递至X轴方向可动板2a,使X轴方向可动板2a沿着基台3上的导轨3a、3a在X轴方向上进退。Y轴移动机构42具有:滚珠丝杠46,其在X轴方向可动板2a上沿Y轴方向延伸;以及电动机45,其与滚珠丝杠46的一个端部连结。滚珠丝杠46的螺母部(省略图示)形成于Y轴方向可动板2c的下表面上。并且,Y轴移动机构42通过滚珠丝杠46将电动机45的旋转运动转换成直线运动而传递至Y轴方向可动板2c,使Y轴方向可动板2c沿着X轴方向可动板2a上的导轨2b、2b在Y轴方向上进退。
在保持单元2的里侧竖立设置有框体5,该框体5具有从基台3的上表面向上方延伸的垂直壁部5a以及水平地延伸的水平壁部5b。在水平壁部5b中收纳有激光光线照射单元6和拍摄单元7的光学系统。在水平壁部5b的前端下表面上配设有构成激光光线照射单元6的聚光器6a,在与该聚光器6a沿X轴方向隔开间隔的位置上配设有拍摄单元7。拍摄单元7具有发出可见光的照明单元和捕捉可见光的通常的拍摄元件,此外还具有照射红外线的红外线照射单元和捕捉红外线的红外线拍摄元件。上述的激光光线照射单元6、移动机构4、拍摄单元7等与省略图示的控制单元电连接,通过从该控制单元指示的指示信号,实施对被加工物的激光加工。
搬送至激光加工装置1的层叠晶片W使第2晶片20的背面20b侧朝向上方而载置于保持单元2的卡盘工作台2e上,隔着粘接带T1而被吸引保持。卡盘工作台2e所保持的层叠晶片W通过移动机构4进行移动,定位于拍摄单元7的正下方而实施对准工序。在该对准工序中,使用拍摄单元7从第2晶片20的背面20b侧检测形成于第1晶片10的正面10a的分割预定线14的位置。接着,通过上述旋转驱动单元使卡盘工作台2e旋转而使该分割预定线14与X轴方向对齐。另外,如上所述,第1晶片10和第2晶片20按照第1晶片10的分割预定线14与形成于第2晶片20的正面20a侧的省略图示的分割预定线一致的方式进行层叠,因此通过该对准工序,与第1晶片10的分割预定线14一起,第2晶片20的分割预定线也同时与X轴方向对齐。另外,通过对准工序而检测的分割预定线14的位置信息存储于未图示的控制单元。
根据通过上述对准工序而检测的位置信息,将激光光线照射单元6的聚光器6a定位于与规定的分割预定线14对应的加工开始位置的上方,如图4的(a)所示,实施照射对于第2晶片20具有透过性的波长的激光光线LB而在第2晶片20的内部形成改质层100的改质层形成工序。参照图4,更具体地说明该改质层形成工序。
在本实施方式中的改质层形成工序中,将激光光线LB的聚光点定位于第2晶片20的内部,如图4的(b)所示那样定位于俯视观察时由第1晶片10的限定分割预定线14的相邻的器件12的两条边(14a、14a)夹持的区域的内部。并且,与上述卡盘工作台2e一起,将层叠晶片W在图4的(a)所示的X轴方向上进行加工进给,沿着晶片W的分割预定线14在第2晶片20的内部形成改质层100。另外,在本实施方式中,在将激光光线LB的聚光点定位于该两条边的内部而形成改质层100时,如图4的(b)所示,沿着该两条边,形成至少两条改质层102、104,作为包含两条该改质层102、104的改质层100。另外,在本实施方式中,如图4的(c)所示,在形成改质层102、104的情况下,沿着改质层102、104在深度不同的多个位置形成改质层。
若如上所述在第2晶片20的内部即在与沿着X轴方向的规定的分割预定线14对应的区域形成了包含两条改质层102、104的改质层100,则使上述移动机构4进行动作,将层叠晶片W在Y轴方向上进行分度进给,将与在Y轴方向上相邻的未加工的分割预定线14对应的区域定位于聚光器6a的正下方。并且,与上述同样地将激光光线LB的聚光点定位于层叠晶片W的第2晶片20的内部的与分割预定线14对应的区域而进行照射,并将层叠晶片W在X轴方向上进行加工进给,形成包含两条改质层102、104的改质层100。同样地,将层叠晶片W在X轴方向和Y轴方向上进行加工进给,在第2晶片20的内部沿着沿X轴方向的所有分割预定线14形成改质层100。接着,使层叠晶片W旋转90度,使与已经形成有上述改质层100的第1方向垂直的第2方向的未加工的分割预定线14与X轴方向对齐。并且,对于与第2方向的各分割预定线14对应的第2晶片20的区域的内部,也与上述同样地定位激光光线LB的聚光点而进行照射,沿着与所有分割预定线14对应的区域形成包含两条改质层102、104的改质层100,完成改质层形成工序。
另外,实施上述改质层形成工序时的激光加工条件例如如下设定。
波长:1064nm
平均输出:1.0W
重复频率:100kHz
加工进给速度:100mm/秒
另外,在上述实施方式的改质层形成工序中,从第2晶片20的上表面(背面20b)侧将聚光点定位于第1晶片10的限定分割预定线14的两条边14a、14a的内部而进行照射,沿着分割预定线14形成了包含两条改质层102、104的改质层100,但本发明不限于此,也可以形成包含例如3条以上的改质层的改质层。
另外,在上述实施方式中,在实施改质层形成工序之前实施了使第2晶片20的背面20b薄化的薄化工序,但本发明不限于此,也可以在实施了上述改质层形成工序之后实施使第2晶片20的背面20b薄化的薄化工序。例如如图5所示,将实施了改质层形成工序的层叠晶片W搬送至磨削装置30,通过与上述薄化工序相同的过程,对第2晶片20的背面20b进行磨削,实施磨削或研磨直至达到期望的厚度为止。这样,在实施了改质层形成工序之后实施该薄化工序,由此对形成有改质层100的区域赋予外力,将第2晶片20沿着改质层100(改质层102、104)进行分割,形成断裂区域110。通过该薄化工序而沿着改质层100进行分割的区域极窄,在该磨削时使用的磨削水不会浸入第1晶片10侧。另外,在以下说明的实施方式中,说明在实施改质层形成工序之前实施上述薄化工序的情况。
若实施了上述改质层形成工序,则实施在第2晶片20的上表面(背面20b)上粘贴具有粘接力的带的带粘贴工序。在实施带粘贴工序时,如图6所示,准备俯视时尺寸与层叠晶片W大致相同的带T2。关于所粘贴的带T2没有特别限定,在本实施方式中,例如选择通过紫外线的照射使粘接力降低而硬化的紫外线硬化型带。作为紫外线硬化型带,例如可以采用以聚氯乙烯(PVC)作为基材的紫外线硬化型带。若准备了上述带T2,则如图6所示,执行紫外线硬化型带粘贴步骤,在形成有改质层100的层叠晶片W的第2晶片20的背面20b上粘贴带T2而成为一体。
在使用紫外线硬化型带作为上述带T2的情况下,优选如图7所示那样执行紫外线照射步骤。
在执行紫外线照射步骤时,如图7所示,将掩模部件120载置于粘接带T1所保持的层叠晶片W的带T2上。掩模部件120具有:环状框架122,其具有与层叠晶片W的形状对应的开口122a;以及格子部件124,其在该开口122a的内侧对粘贴于上述层叠晶片W的带T2的与分割预定线14对应的区域进行掩蔽。将该掩模部件120载置于粘接带T1所保持的层叠晶片W的带T2上,由此通过格子部件124对俯视时带T2上的与分割预定线14对应的区域进行掩蔽。在像这样将掩模部件120载置于粘接带T1上的状态下,将紫外线照射装置50定位于上方,从紫外线照射面50a对至少掩模部件120的整个区域照射紫外线P。由此,在带T2中,对与分割预定线14对应的区域以外的区域照射紫外线P,使与分割预定线14对应的区域以外的区域的粘接力降低。
若如上述那样实施了包含紫外线硬化型带粘贴步骤和紫外线照射步骤的带粘贴工序,则实施以下说明的分割预定线露出工序。
如图8所示,分割预定线露出工序通过将粘贴于层叠晶片W的第2晶片20的背面20b的带T2向上方(箭头R3所示的方向)剥离而实施。此时,在上述紫外线照射步骤中照射了紫外线的区域T2a中,粘接力降低,容易从第2晶片20的背面20b剥离。与此相对,在上述紫外线照射步骤中,在被掩模部件120的格子部件124掩蔽的区域T2b中,粘接力未降低,另外,在与第1晶片10的分割预定线14对应的区域中,如上述那样按照成为断裂起点的方式形成有两条改质层102、104,因此第2晶片20的与分割预定线14对应的区域成为边角料22而被分离。其结果是,能够将沿着分割预定线14形成有改质层102、104的与分割预定线14对应的边角料22从第2晶片20去除,能够使形成于第1晶片10的正面10a的分割预定线14露出。
根据上述实施方式,在层叠晶片的加工方法中,不使用切削刀具而能够从第2晶片20去除与第1晶片10的分割预定线14对应的区域,从而消除切削刀具与第1层叠晶片10接触而使品质降低的问题。另外,在去除与第1晶片10的分割预定线14对应的区域时不使用切削水,因此还消除了由于切削水而使品质降低的问题。
另外,在上述实施方式中,作为在带粘贴工序中进行粘贴的带T2,采用紫外线硬化型带,执行紫外线硬化型带粘贴步骤和紫外线照射步骤,但本发明不限于此。例如也可以是,作为在带粘贴工序中使用的带T2,采用包含聚烯烃的热压接带,对敷设于第2晶片20的上表面的热压接带进行加热、按压而进行粘贴。在该情况下,接下来,如上所述,将带T2从第2晶片20的上表面(背面20b)剥离而将沿着分割预定线14形成有改质层102、104的与分割预定线14对应的边角料22从第2晶片20去除,从而能够使形成于第1晶片10的正面10a的分割预定线14露出。
Claims (5)
1.一种层叠晶片的加工方法,该层叠晶片是在由交叉的多条分割预定线划分而在正面上形成有多个器件的第1晶片的正面上层叠第2晶片而得的,其中,
该层叠晶片的加工方法具有如下的工序:
改质层形成工序,将对于该第2晶片具有透过性的波长的激光光线的聚光点从该第2晶片的上表面侧定位于限定该分割预定线的两条边的内部而进行照射,沿着该分割预定线在第2晶片的内部形成至少两条改质层;
带粘贴工序,将带粘贴在该第2晶片的上表面上;以及
分割预定线露出工序,将该带从该第2晶片的上表面剥离,将沿着该分割预定线形成有该改质层的与该分割预定线对应的边角料从该第2晶片去除,使形成于该第1晶片的正面的该分割预定线露出。
2.根据权利要求1所述的层叠晶片的加工方法,其中,
该带粘贴工序包含如下的工序:
紫外线硬化型带粘贴步骤,将粘接力通过紫外线的照射而降低的紫外线硬化型带粘贴于该第2晶片的上表面上;以及
紫外线照射步骤,对该紫外线硬化型带中的与该分割预定线对应的区域以外的区域照射紫外线而使粘接力降低。
3.根据权利要求1所述的层叠晶片的加工方法,其中,
在该带粘贴工序中使用的带是包含聚烯烃的热压接带,将敷设于该第2晶片的上表面的该热压接带进行加热、按压而进行粘贴。
4.根据权利要求1至3中的任意一项所述的层叠晶片的加工方法,其中,
该层叠晶片的加工方法还具有如下的薄化工序:在该改质层形成工序之前,对该第2晶片的上表面进行磨削或研磨而使该第2晶片薄化。
5.根据权利要求1至3中的任意一项所述的层叠晶片的加工方法,其中,
该层叠晶片的加工方法还具有如下的薄化工序:在该改质层形成工序之后,对该第2晶片的上表面进行磨削或研磨而使该第2晶片薄化。
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