CN115537760A - 成膜装置、成膜方法及蒸发源单元 - Google Patents

成膜装置、成膜方法及蒸发源单元 Download PDF

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Publication number
CN115537760A
CN115537760A CN202210710546.0A CN202210710546A CN115537760A CN 115537760 A CN115537760 A CN 115537760A CN 202210710546 A CN202210710546 A CN 202210710546A CN 115537760 A CN115537760 A CN 115537760A
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Prior art keywords
evaporation source
evaporation
monitoring
film forming
vapor deposition
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Chinese (zh)
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CN115537760B (zh
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风间良秋
山田美悠
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Canon Tokki Corp
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Canon Tokki Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/543Controlling the film thickness or evaporation rate using measurement on the vapor source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN202210710546.0A 2021-06-30 2022-06-22 成膜装置、成膜方法及蒸发源单元 Active CN115537760B (zh)

Applications Claiming Priority (2)

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JP2021-109399 2021-06-30
JP2021109399A JP7314209B2 (ja) 2021-06-30 2021-06-30 成膜装置、成膜方法及び蒸発源ユニット

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CN115537760A true CN115537760A (zh) 2022-12-30
CN115537760B CN115537760B (zh) 2024-09-20

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JP (1) JP7314209B2 (ko)
KR (1) KR20230004284A (ko)
CN (1) CN115537760B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537734A (zh) * 2021-06-30 2022-12-30 佳能特机株式会社 成膜装置、成膜方法及蒸发源单元

Citations (17)

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JPS56160964U (ko) * 1980-05-02 1981-11-30
JPH07109569A (ja) * 1993-10-08 1995-04-25 Shincron:Kk 薄膜形成方法
JP2004225058A (ja) * 2002-11-29 2004-08-12 Sony Corp 成膜装置および表示パネルの製造装置とその方法
JP2011042868A (ja) * 2009-07-24 2011-03-03 Hitachi High-Technologies Corp 真空蒸着方法及びその装置
KR20120010736A (ko) * 2010-07-27 2012-02-06 히다치 조센 가부시키가이샤 증착장치
US20120174865A1 (en) * 2011-01-12 2012-07-12 Choi Young-Mook Deposition source and organic layer deposition apparatus including the same
CN103282538A (zh) * 2011-01-18 2013-09-04 夏普株式会社 蒸镀装置、蒸镀方法、有机el元件和有机el显示装置
WO2013132794A1 (ja) * 2012-03-07 2013-09-12 パナソニック株式会社 蒸着装置
JP2013185252A (ja) * 2012-03-12 2013-09-19 Hitachi High-Technologies Corp 蒸発源装置及び真空蒸着装置及び有機el表示装置の製造方法
JP2014070238A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 真空蒸着装置及びその蒸着方法
JP2016117915A (ja) * 2014-12-18 2016-06-30 キヤノントッキ株式会社 蒸着装置並びに蒸着方法
CN106885549A (zh) * 2017-03-24 2017-06-23 京东方科技集团股份有限公司 一种导向管、薄膜厚度传感器及蒸镀设备
US20170222191A1 (en) * 2016-11-28 2017-08-03 Shanghai Tianma AM-OLED Co., Ltd. Vacuum evaporation device and method thereof, and organic light-emitting display panel
CN110158036A (zh) * 2019-03-15 2019-08-23 上海视涯信息科技有限公司 一种蒸镀沉积设备及其使用方法
JP2020020032A (ja) * 2018-07-31 2020-02-06 キヤノントッキ株式会社 蒸発レート測定装置、蒸発レート測定装置の制御方法、成膜装置、成膜方法及び電子デバイスを製造する方法
JP2020139227A (ja) * 2019-02-27 2020-09-03 キヤノントッキ株式会社 成膜装置、成膜方法、及び電子デバイス製造方法
JP2020164920A (ja) * 2019-03-29 2020-10-08 キヤノントッキ株式会社 成膜装置及び成膜方法

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CA2185640A1 (en) * 1995-11-30 1997-05-31 Russell J. Hill Electron beam evaporation apparatus and method
JP6243474B2 (ja) 2015-06-18 2017-12-06 キヤノントッキ株式会社 真空蒸着装置、蒸着膜の製造方法および有機電子デバイスの製造方法
KR101965102B1 (ko) 2018-06-15 2019-04-02 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 전자 디바이스 제조방법

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160964U (ko) * 1980-05-02 1981-11-30
JPH07109569A (ja) * 1993-10-08 1995-04-25 Shincron:Kk 薄膜形成方法
JP2004225058A (ja) * 2002-11-29 2004-08-12 Sony Corp 成膜装置および表示パネルの製造装置とその方法
JP2011042868A (ja) * 2009-07-24 2011-03-03 Hitachi High-Technologies Corp 真空蒸着方法及びその装置
KR20120010736A (ko) * 2010-07-27 2012-02-06 히다치 조센 가부시키가이샤 증착장치
US20120174865A1 (en) * 2011-01-12 2012-07-12 Choi Young-Mook Deposition source and organic layer deposition apparatus including the same
CN102586738A (zh) * 2011-01-12 2012-07-18 三星移动显示器株式会社 沉积源和包括沉积源的有机层沉积装置
CN103282538A (zh) * 2011-01-18 2013-09-04 夏普株式会社 蒸镀装置、蒸镀方法、有机el元件和有机el显示装置
CN104136653A (zh) * 2012-03-07 2014-11-05 松下电器产业株式会社 蒸镀装置
WO2013132794A1 (ja) * 2012-03-07 2013-09-12 パナソニック株式会社 蒸着装置
JP2013185252A (ja) * 2012-03-12 2013-09-19 Hitachi High-Technologies Corp 蒸発源装置及び真空蒸着装置及び有機el表示装置の製造方法
JP2014070238A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 真空蒸着装置及びその蒸着方法
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US20170222191A1 (en) * 2016-11-28 2017-08-03 Shanghai Tianma AM-OLED Co., Ltd. Vacuum evaporation device and method thereof, and organic light-emitting display panel
CN106885549A (zh) * 2017-03-24 2017-06-23 京东方科技集团股份有限公司 一种导向管、薄膜厚度传感器及蒸镀设备
JP2020020032A (ja) * 2018-07-31 2020-02-06 キヤノントッキ株式会社 蒸発レート測定装置、蒸発レート測定装置の制御方法、成膜装置、成膜方法及び電子デバイスを製造する方法
JP2020139227A (ja) * 2019-02-27 2020-09-03 キヤノントッキ株式会社 成膜装置、成膜方法、及び電子デバイス製造方法
CN111621762A (zh) * 2019-02-27 2020-09-04 佳能特机株式会社 成膜装置、成膜方法以及电子器件制造方法
CN110158036A (zh) * 2019-03-15 2019-08-23 上海视涯信息科技有限公司 一种蒸镀沉积设备及其使用方法
JP2020164920A (ja) * 2019-03-29 2020-10-08 キヤノントッキ株式会社 成膜装置及び成膜方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537734A (zh) * 2021-06-30 2022-12-30 佳能特机株式会社 成膜装置、成膜方法及蒸发源单元
CN115537734B (zh) * 2021-06-30 2024-04-19 佳能特机株式会社 成膜装置、成膜方法及蒸发源单元

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JP2023006676A (ja) 2023-01-18
CN115537760B (zh) 2024-09-20
JP7314209B2 (ja) 2023-07-25
KR20230004284A (ko) 2023-01-06

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