CN115460798B - Hole filling method of ceramic substrate - Google Patents
Hole filling method of ceramic substrate Download PDFInfo
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- CN115460798B CN115460798B CN202211408676.5A CN202211408676A CN115460798B CN 115460798 B CN115460798 B CN 115460798B CN 202211408676 A CN202211408676 A CN 202211408676A CN 115460798 B CN115460798 B CN 115460798B
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- laser
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
Abstract
The invention discloses a hole filling method of a ceramic substrate, relates to the field of processing of semiconductor power devices, and aims to solve the problem of low efficiency of filling holes with bubbles on the ceramic substrate, and the key points of the technical scheme are as follows: a method for filling a hole in a ceramic substrate comprises the following steps of (1) laser drilling a through hole: using a laser to make a through hole on the ceramic substrate; (2) tile cleaning: cleaning stains on the surface of the ceramic chip and dust after laser drilling; (3) vacuum sputtering of seed layer: metallizing the surface of the ceramic to form a conductive layer; (4) pulse plating: connecting the metal copper layers in the through holes by pulse plating of the through holes drilled by the laser; (5) picosecond cutting: cutting a metal copper layer joint by a picosecond laser to form a fracture; (6) direct current electroplating: filling the through hole with the fracture by plating metal copper through direct current; (7) grinding and polishing: and leveling the surface, and removing the tiny pit bulges after hole filling. The hole filling method of the ceramic substrate has the advantages of no bubble in hole filling, high efficiency and high yield.
Description
Technical Field
The invention relates to the field of processing of semiconductor power devices, in particular to a hole filling method of a ceramic substrate.
Background
Printed Circuit Boards (PCBs), also called Printed Circuit Boards (PCBs), are providers of electrical connections of electronic components, and with the development of miniaturization, convenience, and intelligence of electronic products, the assembly density and the integration level of components on PCBs are also increasing, especially with the development of 4G and 5G communication technologies, the requirements on signal transmission amount, transmission speed, and transmission distance are higher and higher, and as a main carrier for electronic signal transmission, PCBs are also developing toward high frequency, high power, miniaturization, and high-density concentration of components, however, this also puts higher requirements on the heat dissipation performance of PCBs.
On a semiconductor power device, the ceramic substrate has the advantages of excellent heat conduction performance, small thermal expansion coefficient, high stability and the like, and is widely applied to the technical fields of semiconductor illumination, aerospace, automotive electronics, 5G communication and the like and military electronic components. Generally, conductive circuits are uniformly distributed on the upper and lower sides of a ceramic substrate, and in order to realize the conduction of the upper and lower circuits, the ceramic substrate is usually drilled and then filled with metal conductive slurry or directly electroplated copper, so that the conduction of the upper and lower circuits is realized.
The existing hole filling technology comprises metal conductive paste hole filling and direct electroplating hole filling, a hole filling jig is needed when the metal conductive paste hole filling is carried out, in order to achieve a good filling effect, a vacuum hole filling mode can be introduced, the hole filling mode is high in cost, and the yield is stable only when holes of 100 to 250 micrometers are filled. The requirements for fine circuits cannot be satisfied. The direct electroplating via-filling technique is prone to generate bubbles and holes (as shown in fig. 1), which greatly affects the yield of the ceramic substrate and the service life of the power device.
Therefore, a new solution is needed to solve this problem.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a method for filling holes in a ceramic substrate, which comprises the steps of sputtering a conductive layer, connecting in a pulse electroplating mode, cutting off in picoseconds, and filling holes in a direct current electroplating mode, wherein the through holes with smaller apertures can be filled, the surface is smooth, the requirement of manufacturing fine circuits is met, the defects of bubbles and holes cannot be generated in the filling holes, the electroplating time is obviously reduced, the processing efficiency is improved, the method is simple, the cost is low, and the quality is stable.
The technical purpose of the invention is realized by the following technical scheme: a method of hole-filling a ceramic substrate, comprising the steps of:
(1) Laser drilling of a through hole: drilling a through hole on the ceramic substrate by using a laser;
(2) Ceramic chip cleaning: cleaning stains on the surface of the ceramic chip and dust after laser drilling;
(3) Vacuum sputtering of the seed layer: forming a conductive layer by metallizing the surface of the ceramic;
(4) Pulse plating: connecting the metal copper layers in the through holes by pulse plating of the through holes drilled by the laser;
(5) Picosecond cutting: cutting a metal copper layer joint by a picosecond laser to form a fracture;
(6) D, direct current electroplating: filling the through hole with the fracture by plating metal copper through direct current;
(7) Grinding and polishing: and leveling the surface, and removing the tiny pit bulges after hole filling.
The invention is further configured to: the aperture of the laser drill through hole is 0.02mm-0.5mm, the thickness of the ceramic is 0.15mm-2.0mm, and the thickness-diameter ratio is less than 4.
The invention is further configured to: in the step (3), the seed layer is sputtered in vacuum to form a chromium or titanium-tungsten alloy layer with a thickness of 0.1-0.4 μm, and then a copper layer is sputtered with a thickness of 0.5-3 μm.
The invention is further configured to: in the step (4), the pulse plating is in a positive and negative pulse alternating mode, so that the middle part of the through hole is connected.
The invention is further configured to: the pulse plating takes an insoluble ruthenium iridium titanium net as an anode and a ceramic substrate as a cathode, and the plating parameters are as follows: current density of 2.5ASD, positive and negative pulses 20:2, the time is 80min, and the surface copper thickness is 8 to 10 mu m.
The invention is further configured to: wherein the chemical solution for pulse copper plating comprises CuSO 4 :100 g/L ~270g/L，H 2 SO 4 :60g/L ~2200g/L，Cl - :40ppm~80ppm，Fe 2 O 3 /V 2 O 5 0.2 g/L to 16g/L, a brightener, and a leveling agent.
The invention is further configured to: the direct current electroplating takes an insoluble ruthenium iridium titanium net as an anode and a ceramic substrate as a cathode, and the electroplating parameters are as follows: and D, direct current 1ASD,40min + direct current 1.5ASD, wherein the time is 15min, the surface is basically filled and leveled, and the thickness of copper on the surface is increased by 8-10 mu m.
The invention is further configured to: the direct current electroplating adopts a copper sulfate copper plating system with high filling and leveling property, and comprises CuSO 4 :240g/L，H 2 SO 4 :60g/L，Cl - 60ppm, brightener and leveling agent.
The invention is further configured to: the laser aperture of the step (1) is 80 microns, and the laser type is an infrared fiber laser.
The invention is further configured to: the picosecond laser in the step (5) is an ultraviolet picosecond laser, the laser speed is 50-100mm/s, and the hot zone cutting area is 15-30 mu m.
In conclusion, the invention has the following beneficial effects: through laser drilling, seed layer sputtering, pulse electroplating connection, picosecond cutting, direct current electroplating filling and flattening, the polished substrate surface is flat, the manufacturing requirement of a fine circuit is met, and the filling hole has no bubble and hole; and the hole-filling electroplating time is greatly shortened to be within 115 min.
Drawings
FIG. 1 is a diagram illustrating a prior art ceramic substrate after hole filling;
FIG. 2 is a schematic view of a ceramic substrate of the present invention after hole filling;
FIG. 3 is a schematic diagram of a variation of the ceramic substrate structure according to the present invention.
In the figure: 1. a ceramic substrate; 2. laser through holes; 3. sputtering a seed layer; 4. pulse electroplating connection; 5. filling holes by direct current electroplating; 6. and (5) breaking.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
A method of hole-filling a ceramic substrate, comprising the steps of:
(1) Laser drilling of a through hole: drilling a through hole on the ceramic substrate by using a laser;
(2) Ceramic chip cleaning: cleaning stains on the surface of the ceramic chip and dust after laser drilling;
(3) Vacuum sputtering of the seed layer: metallizing the surface of the ceramic to form a conductive layer;
(4) Pulse plating: connecting the metal copper layers in the through holes by pulse plating of the through holes drilled by the laser;
(5) Picosecond cutting: cutting the joint of the metal copper layer by a picosecond laser to form a fracture;
(6) D, direct current electroplating: filling the through hole with the fracture by plating metal copper through direct current;
(7) Grinding and polishing: and leveling the surface, and removing the tiny pit bulges after hole filling.
Wherein the aperture of the laser drilling through hole is 0.02mm-0.5mm, the thickness of the ceramic is 0.15mm-2.0mm, and the ratio of thickness to diameter is less than 4.
In the step (3), the seed layer is sputtered in vacuum to form a chromium or titanium-tungsten alloy layer with a thickness of 0.1-0.4 μm, and then a copper layer is sputtered with a thickness of 0.5-3 μm.
The pulse plating is a positive and negative pulse alternating mode, so that the middle part of the through hole is connected.
The pulse plating takes insoluble ruthenium iridium titanium net as an anode and a ceramic substrate as a cathode, and the plating parameters are as follows: the current density is 2.5ASD, the positive and negative pulses are 20, the time is 80min, the middle parts are all connected, and the surface copper thickness is 8 to 10 mu m.
The pulse copper plating solution comprises CuSO 4 :100~270g/L，H 2 SO 4 :60~2200g/L，Cl - :40~80ppm，Fe 2 O 3 /V 2 O 5 0.2 to 1lg/L, a brightener and a leveling agent.
Wherein the direct current electroplating takes insoluble ruthenium iridium titanium net as an anode and a ceramic substrate as a cathode, and the electroplating parameters are as follows: and D, direct current 1ASD,40min + direct current 1.5ASD, wherein the time is 15min, the surface is basically filled and leveled, and the thickness of copper on the surface is increased by 8-10 mu m.
The direct current electroplating adopts a copper sulfate copper plating system with high filling and leveling property, and comprises CuSO 4 :240g/L，H 2 SO 4 60g/L, cl < - > 60ppm, brightener and leveling agent.
The laser aperture of the step (1) is 80 μm, and the laser type is an infrared fiber laser.
And (5) the picosecond laser is an ultraviolet picosecond laser, the laser speed is 50-100mm/s, and the hot zone is cut by 15-30 mu m.
The brightener can be one or more of sodium thiolpropanate, dimethyl formamido sulfonate, thia-imidazoyl dithio propane sulfonic acid and poly-dithio-dipropyl sulfonate;
the leveling agent can be one or more of polyethyleneimine alkyl compounds, fatty amine ethoxy sulfonate, sodium mercaptoimidazole propanesulfonate and ethylene thiourea;
the following embodiments are specifically explained in detail with reference to the structural change diagram of fig. 3:
1. laser drilling: as a first step in fig. 3, the surface of the ceramic substrate 1 is irradiated with a high power density laser beam, so that the ceramic substrate 1 is rapidly heated to a vaporization temperature and vaporized to form the laser via 2. The maximum power of the used laser is 150W, and the wavelength of the used laser is 1064 nm. The power is set at 25%, the frequency at 500Hz and the speed at 80mm/S. Drilling holes on the surface of the aluminum nitride ceramic according to a designed drawing, wherein the thickness of the ceramic is 0.38mm, and the aperture is 0.1mm. The perforation rate was 800 per minute.
2. Ceramic chip cleaning: grinding the ceramic chip to remove the ceramic residue on the surface, washing with ultrasonic pure water for 5min to remove stains, washing with alcohol for 2min to remove water stains, and drying.
3. Vacuum sputtering of the seed layer: as the second step in fig. 3, sputtering a metal layer on the ceramic substrate 1 and the inner wall of the hole to make the ceramic surface conductive, as a plating seed layer 3; the sputtering thickness of the titanium layer is 0.06 mu m, and the sputtering power is 5kw; the copper layer was sputtered to a thickness of 0.8 μm at a sputtering power of 6kw.
4. Pulse plating: placing the ceramic substrate 1 sputtered with the seed layer in a pore-filling electroplating solution, wherein the main component of the ceramic substrate is CuSO 4 : 200g/L，H 2 SO 4 :100g/L，Cl - :60ppm，Fe 2 O 3 /V 2 O 5 0.5g/L; taking a ruthenium iridium titanium net as an anode, taking a ceramic substrate 1as a cathode, wherein the current density is 2ASD, the positive and negative pulse ratio is 10; so that the middle of the hole is connected to the pulse plating connection 4 and the blind hole is formed (opaque) as shown in the third step in fig. 3.
5. Picosecond cutting: a fracture 6 is formed in the metal copper layer joint by picosecond laser cutting, as shown in the fourth step in fig. 3.
6. D, direct current electroplating: the blind via surface can be filled up, i.e., the via hole is filled up by direct current electroplating 5, using mademe high-copper low-acid series hole filling chemicals, ruthenium iridium titanium mesh as an anode, and the ceramic substrate 1as a cathode, under the current density of 1ASD for 20 minutes and under the current density of 1.5ASD for 30 minutes, as shown in the fifth step of fig. 3.
7. Grinding and polishing: and (3) grinding and polishing for 20 minutes by using a high-precision semiconductor grinding and polishing machine at the rotating speed of 30 r/min and by using cerium oxide as a grinding medium to remove pits and bulges on the surface and obtain a smooth and flat surface.
Through laser drilling, seed layer sputtering, pulse electroplating connection, picosecond cutting, direct current electroplating filling and leveling, the polished substrate surface is flat, the manufacturing requirement of a fine circuit is met, and the filling hole has no bubbles or holes, as shown in figure 2; and the hole filling electroplating time is greatly shortened to be within 115 min.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention should also be considered as within the scope of the present invention.
Claims (10)
1. A method for filling holes in a ceramic substrate is characterized by comprising the following steps:
(1) Laser drilling of a through hole: drilling a through hole on the ceramic substrate by using a laser;
(2) Ceramic chip cleaning: cleaning stains on the surface of the ceramic chip and dust after laser drilling;
(3) Vacuum sputtering of a seed layer: forming a conductive layer by metallizing the surface of the ceramic;
(4) Pulse plating: forming connection of a metal copper layer in the through hole of the laser drill through pulse plating;
(5) Picosecond cutting: cutting the joint of the metal copper layer by a picosecond laser to form a fracture;
(6) D, direct current electroplating: filling the through hole with the fracture by plating metal copper through direct current;
(7) Grinding and polishing: and leveling the surface, and removing the tiny pit bulges after hole filling.
2. The method of claim 1, wherein: the aperture of the laser drill through hole is 0.02mm-0.5mm, the thickness of the ceramic is 0.15mm-2.0mm, and the thickness-diameter ratio is less than 4:1.
3. the method of claim 1, wherein: in the step (3), the seed layer is sputtered in vacuum to form a chromium or titanium-tungsten alloy layer with a thickness of 0.1-0.4 μm, and then a copper layer is sputtered with a thickness of 0.5-3 μm.
4. The method of claim 1, wherein: in the step (4), the pulse plating is in a positive and negative pulse alternating mode, so that the middle part of the through hole is connected.
5. The method of claim 4, wherein: the pulse plating takes an insoluble ruthenium iridium titanium net as an anode and a ceramic substrate as a cathode, and the plating parameters are as follows: current density of 2.5ASD, positive and negative pulses 20:2, the time is 80min, and the surface copper thickness is 8 to 10 mu m.
6. The method of claim 4, wherein: wherein the chemical solution for pulse copper plating comprises CuSO 4 :100 g/L ~270g/L，H 2 SO 4 :60g/L ~2200g/L，Cl - :40ppm~80ppm，Fe 2 O 3 /V 2 O 5 0.2 g/L to 16g/L, a brightener, and a leveling agent.
7. The method of claim 1 or 5, wherein: the direct current electroplating takes an insoluble ruthenium iridium titanium net as an anode and a ceramic substrate as a cathode, and the electroplating parameters are as follows: and D, direct current 1ASD,40min + direct current 1.5ASD, wherein the time is 15min, the surface is basically filled and leveled, and the thickness of copper on the surface is increased by 8-10 mu m.
8. The method of claim 7, wherein: the direct current electroplating adopts a copper sulfate copper plating system with high filling and leveling property, and comprises CuSO 4 :240g/L，H 2 SO 4 :60g/L，Cl - 60ppm, brightener and leveling agent.
9. The method of claim 2, wherein: the laser aperture of the step (1) is 80 microns, and the laser type is an infrared fiber laser.
10. The method of claim 9, wherein: the picosecond laser in the step (5) is an ultraviolet picosecond laser, the laser speed is 50-100mm/s, and the hot zone cutting area is 15-30 mu m.
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| CN115939928B (en) * | 2023-03-10 | 2023-06-16 | 四川富乐华半导体科技有限公司 | Heat sink structure of semiconductor laser and preparation method thereof |
| CN115993312B (en) * | 2023-03-23 | 2023-05-26 | 四川富乐华半导体科技有限公司 | Method for testing organic powder/slurry by using laser particle sizer |
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| CN104159401A (en) * | 2013-05-13 | 2014-11-19 | 健鼎（无锡）电子有限公司 | Manufacture method for printed circuit board (PCB) with copper wrap layer |
| CN109618505A (en) * | 2018-10-30 | 2019-04-12 | 华中科技大学 | A kind of method of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate |
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| JP4202641B2 (en) * | 2001-12-26 | 2008-12-24 | 富士通株式会社 | Circuit board and manufacturing method thereof |
| TWI252721B (en) * | 2004-09-10 | 2006-04-01 | Nan Ya Printed Circuit Board C | Method of manufacturing double-sided printed circuit board |
| CN103429003A (en) * | 2012-05-25 | 2013-12-04 | 大毅科技股份有限公司 | Method for manufacturing ceramic metallization heating panel |
| JP6079150B2 (en) * | 2012-11-07 | 2017-02-15 | 凸版印刷株式会社 | Copper filling method of through hole by plating |
| JP6398243B2 (en) * | 2014-03-20 | 2018-10-03 | 三菱マテリアル株式会社 | Power module substrate manufacturing method |
| JP6406841B2 (en) * | 2014-03-24 | 2018-10-17 | アトテック・ドイチュラント・ゲーエムベーハーＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ Ｇｍｂｈ | Metal layer forming method and printed circuit board manufacturing method |
| JP6539992B2 (en) * | 2014-11-14 | 2019-07-10 | 凸版印刷株式会社 | Printed circuit board, semiconductor device, method of manufacturing wired circuit board, method of manufacturing semiconductor device |
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| CN112030203B (en) * | 2020-08-28 | 2021-10-26 | 生益电子股份有限公司 | Through hole electroplating filling method and preparation method of printed circuit board |
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| US5050295A (en) * | 1989-10-14 | 1991-09-24 | Stc Plc | Multilayer through hole connections |
| CN104159401A (en) * | 2013-05-13 | 2014-11-19 | 健鼎（无锡）电子有限公司 | Manufacture method for printed circuit board (PCB) with copper wrap layer |
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