CN109618505A - A kind of method of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate - Google Patents
A kind of method of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate Download PDFInfo
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- CN109618505A CN109618505A CN201811273109.7A CN201811273109A CN109618505A CN 109618505 A CN109618505 A CN 109618505A CN 201811273109 A CN201811273109 A CN 201811273109A CN 109618505 A CN109618505 A CN 109618505A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
The invention belongs to electronic manufacture correlative technology fields, it discloses a kind of methods of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate, method includes the following steps: (1) is cut into through-hole on DBC substrate using pulse laser, the through-hole runs through the DBC substrate, and cladding has copper seed crystal thin layer, seed layer of the copper seed crystal thin layer as subsequent plating on its hole wall；(2) using the seed layer as seed layer, pulse plating regime is used to carry out plating filling perforation to the through-hole to form fine copper column in the through-hole, two copper foil layers that the DBC substrate is disposed opposite to each other are electrically connected in the both ends of the fine copper column, are achieved in the electric connection of two-sided copper foil layer.The radius-thickness ratio of fine copper pole interconnection structure prepared by the present invention is high, and electric conductivity is high, high reliablity, is conducive to electronic manufacturing technology and develops to high density and high-precision.
Description
Technical field
The invention belongs to electronic manufacture correlative technology fields, more particularly, to a kind of height of direct copper ceramic substrate
The method of radius-thickness ratio through-hole interconnection.
Background technique
Circuit board is the core component of electronic device, with traditional organic material (such as epoxy resin, polyimides) for base
The circuit board of material preparation the disadvantages of there are thermal conductivity is low and poor heat resistance, the high temperature thermal force under unbearable high current load.
In contrast, ceramic material have thermal conductivity height, good insulation preformance, high mechanical strength, heat resistance by force etc. series of advantages,
It is developing progressively as the ideal encapsulation base material of great-power electronic module of new generation, therefore ceramic circuit board manufacturing technology also obtains
Extensive concern and rapid development.
In order to solve the problems, such as that great-power electronic encapsulates, direct copper (Direct Bonded Copper, DBC) technology is answered
It transports and gives birth to.DBC technology is initially the ceramic surface metallization technology to be grown up based on aluminium oxide ceramic substrate.1975,
J.F.Burgess and Y.S.Sun et al. propose this technology earliest, introduce oxygen in the reaction interface of aluminium oxide and melting fine copper
Element, the Cu-Cu generated under high temperature2O eutectic liquid has good wetability to aluminium oxide, by generating CuAlO2As transition
Copper foil is directly applied and is connect on aluminium oxide ceramic substrate, then forms required route by figure transfer process by layer.Subsequent nitridation
It is based on Al that aluminium ceramic substrate, which applies copper technology,2O3- DBC technology grows up, since aluminium nitride ceramics is hardly sent out with copper foil
Raw reaction, gas can be generated by introducing oxygen element in applying termination process, connect intensity to applying and have an adverse effect, therefore usually be connect applying
It is preceding that aluminium nitride ceramics is surface-treated, one layer of fine and close alumina flake is generated to improve bond strength.DBC substrate is maximum
The characteristics of be that thick copper foil (>=150 μm) can carry high frequency high current, while have both ceramic substrate high thermal conductivity characteristic and height it is exhausted
Edge characteristic, and the Eutectic Layer formed between copper foil and ceramics makes the two have extremely good binding force, therefore DBC substrate has
Excellent electric property and high reliability.Currently, domestic and international Al2O3- DBC technology and AlN-DBC technology are widely used for
Industrialized production.
For the urgent need of power electronics modules miniaturization, it is necessary to significantly reduce the packaging body of ceramic circuit board
Product, optimal method is exactly to use multilayer interconnection structure.Multilayer circuit board is used widely in traditional PCB industry,
Main reason is that multilager base plate is small in size, route is short, signal, power supply, the mutually isolated shielding of ground line are particularly suitable for device weight
High density, high-precision, high reliability application under amount and volume event of overload.But currently based on the multilayer of DBC substrate
Ceramic circuit board technology of preparing still has many urgent problems, wherein how most important technical bottleneck is two-sided
Prepare high quality fine copper through-hole in copper-clad plate, the quality of via metal directly determines that it holds current-carrying ability and reliable
Property.
German Schulz Harder J. et al. proposes several conductive channel technologies and realizes the mutual of DBC substrate double-sided circuit
Even (Schulz Harder J.Advantages and new development of direct bonded copper
Substrates.MicroelectronReliab, 2003,43 (3): 359-365.), this is the initial two-sided interconnection of DBC substrate
Method.First method is preset copper ball forming process, is built in pre-fabricated lead to slightly larger than the copper ball of substrate thickness with diameter
Then copper foil is applied respectively and is connected to substrate two sides by Kong Zhong, be bonded after the fusing of copper ball part with upper and lower two blocks of copper foils to constitute conduction
Channel.Between copper ball and through-hole need to there are enough gaps to lead to ceramic rupture to avoid thermally expanding due to copper ball, it is pre-
The through-hole diameter of system has to be larger than copper ball diameter and substrate thickness.Another method is punching press channel formation method, and ceramic substrate is pre-
After through-hole processed, directly copper foil is applied and is connected to substrate surface, the later period deforms upper and lower level copper foil by loading force, it is connected in hole or
Person welds together.The advantages of this form is at low cost, but to compare former approach bigger for clear size of opening, and after being connected to up and down
Layer copper foil out-of-flatness.The common disadvantage of above method is interconnection (the through-hole thickness for needing larger-diameter through-hole to complete two-sided copper foil
Diameter ratio is less than 1:1), significantly limit the trend that conducting wire develops to densification.On the other hand, both of which can not
It is filled up completely metallic copper in through-hole, hole is still remained in hole, easily generates defect in conducting hole site after later period stacked package,
Influence resulting devices stability.
Patent CN201563285U provides a kind of method for realizing the two-sided interconnection of DBC substrate.Firstly, being existed using laser
DBC substrate predeterminated position drilling, will dry after base-plate cleaning, and silver paste or copper slurry are then perfused in hole, is sintered, realizes after drying
The two-sided interconnection of DBC substrate.This method technique is relatively simple, but its electric slurry resistance value used is larger, and electric conductivity is poor, when
When applied to high current, high power module, the problems such as there are electric energy loss and excessive pressure drops, will seriously affect the work effect of equipment
More there are the security risks such as overload fever in rate.
Generally speaking, existing DBC substrate through-hole interconnecting method there are through-hole radius-thickness ratios small, hole, conductivity it is low, can
By the low equal a series of problems of property, it has also become restrict the bottleneck that electronic manufacturing technology develops to high density, high-precision direction.Accordingly
Ground, there is develop a kind of technical need that high thickness to diameter ratio through-hole interconnection can be realized on DBC substrate for this field.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of two-sided copper foils for making DBC substrate
The characteristics of realizing the method interconnected by through-hole, be based on existing DBC substrate, radius-thickness ratio can be obtained by studying and devise one kind
Higher, the preferable interconnection structure of electric conductivity method.This method combines laser drilling processes and pulse plating techniques, proposes
A kind of method preparing copper post interconnection structure on DBC substrate, the interconnection structure can be realized the interconnection of two-sided copper foil layer,
And it has the characteristics that radius-thickness ratio high (being greater than 4:1), good conductivity, pore-free, high reliablity, meets great-power electronic module
The requirement in field.
To achieve the above object, the present invention provides a kind of sides of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate
Method, method includes the following steps:
(1) through-hole is cut on DBC substrate using pulse laser, the through-hole runs through the DBC substrate, and its hole wall
Upper cladding has copper seed crystal thin layer, seed layer of the copper seed crystal thin layer as subsequent plating；
(2) using the seed layer as seed layer, use pulse plating regime to the through-hole carry out plating filling perforation with
Fine copper column is formed in the through-hole, two copper that the DBC substrate is disposed opposite to each other are electrically connected in the both ends of the fine copper column
Layers of foil is achieved in the electric connection of two-sided copper foil layer.
Further, the DBC substrate is composite construction comprising ceramic layer and be formed in the ceramic layer it is opposite two
The copper foil layer on a surface；The through-hole sequentially passes through one, the ceramic substrate and two in two copper foil layers
Another in a copper foil layer.
Further, the ceramic layer with a thickness of 0.3mm~1mm, the copper foil layer with a thickness of 0.15mm~
0.3mm, the DBC substrate with a thickness of 0.6mm~1.6mm.
Further, in step (1), fusing and gas occur under the action of laser beam for the metallic copper and ceramics of the DBC
Change the plumage brightness being formed by directly to sputter on the hole wall of the through-hole, to form the copper seed crystal thin layer on the hole wall.
Further, the aperture of the through-hole is 0.15mm~0.4mm, and radius-thickness ratio is greater than 4:1.
Further, the average output power of the pulse laser be 20w~500w, pulse recurrence frequency be 1kHz~
100kHz, scanning speed are 20mm/s~500mm/s.
Further, the DBC substrate is with any one of lower substrate: Al2O3- DBC substrate, AlN-DBC substrate,
Si3N4- DBC substrate and BeO-DBC substrate.
Further, in step (2), promote metallic copper using the inducing action of the seed layer and the phase transformation of pulse current
First in the through-hole in central part filling perforation, and fill full fine copper in the through-hole finally to form the fine copper column.
Further, operating temperature when plating is 18 DEG C~30 DEG C, current density 1.5A/dm2~2.5A/dm2。
Further, the energy density of the pulse laser is 3.18 × 102J/cm2~9.55 × 103J/cm2。
In general, through the invention it is contemplated above technical scheme is compared with the prior art, it is provided by the invention straight
The method for connecing the high thickness to diameter ratio through-hole interconnection of deposited copper ceramic substrate mainly has the advantages that
1. the interconnection that the method can realize two-sided copper foil using laser drill and pulse plating process on DBC substrate
Structure reduces preparation time, simplifies process, improves efficiency.
2. being cut into through-hole on DBC substrate using pulse laser, the through-hole runs through the DBC substrate, and its hole wall
Upper cladding has copper seed crystal thin layer, thus seed layer of the copper seed crystal thin layer as subsequent plating has been completed at the same time laser drill
And the via hole, and clear size of opening is not only restricted to subsequent technique, can obtaining the lesser through-hole of diameter, (through-hole radius-thickness ratio is greater than
4:1), meet the trend that conducting wire develops to densification.
3. seed layer has inducing action to electro-coppering ionic crystal during pulse plating filling perforation, metal can be made
Copper high effective deposition is in through-hole, and control metallic copper preferentially fill in through-holes by center portion position, avoids aperture and is closed formation packet too early
Hole defect, final realization fine copper is filled, while making the resistance of fine copper column lower, no hole, and reliability is higher.
4. the simple process of the method, easy to implement, and fundamentally solves the pottery towards high-power applications scene
The two-sided copper foil of porcelain copper-clad plate interconnects problem, lays a good foundation for multilayer ceramic circuit board manufacture.
Detailed description of the invention
Fig. 1 is the process signal of the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate provided by the invention
Figure.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which: 1- ceramic substrate,
2- copper foil layer, 3- seed layer, 4- fine copper column.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
Referring to Fig. 1, the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate provided by the invention, this method
It is used to prepare high thickness to diameter ratio copper post interconnection structure, which realizes the electric connection between two copper foil layers.Specifically, should
Method mainly comprises the steps that
Step 1 is cut into through-hole using pulse laser on DBC substrate, and the through-hole runs through the DBC substrate, and its
Cladding has copper seed crystal thin layer, seed layer of the copper seed crystal thin layer as subsequent plating on hole wall.
Specifically, the DBC substrate is directly acted on using pulse laser, and controls the energy density of the pulse laser
And scanning speed is to form perforative through-hole on the DBC substrate.Under the action of high energy laser beam, the DBC substrate
Fusing occurs for metallic copper and ceramics, gasification is directly sputtered on the hole wall of the through-hole with forming plumage brightness, in the hole of the through-hole
One layer of the cladding copper seed crystal thin layer being firmly combined so has been completed at the same time laser system using the seed layer as subsequent plating on wall
Hole and the metallization of hole inner wall.
In present embodiment, using laser and high-speed figure scanning galvanometer, x-y-z three-dimensional working platform, software control system
The Precision Machining platform of composition, and control the laser technical parameters such as optical maser wavelength, power, scanning speed, repetition rate, pulsewidth and exist
The predeterminated position of the DBC substrate is drilled with concentric circular scans or spiral scan pattern to obtain the through-hole, described
The aperture of through-hole is 0.15mm~0.4mm, and radius-thickness ratio is greater than 4:1.At this point, it is thin to be formed with metallic copper on the inner wall of the through-hole
Layer, seed layer of the metal copper lamina as subsequent plating.Laser cutting drilling needs to control laser energy density appropriate,
When laser energy density is too low, the DBC substrate can not form through-hole；Laser energy density is excessively high then to the DBC substrate heat
Impact it is larger so that the ceramics of the DBC substrate crack.
Wherein, the pulse width of pulse laser is ns grades or ms grades, and the wavelength of output is infrared band (800-1064nm)；
For the average output power of laser in 20w~500w, pulse recurrence frequency is 1kHz~100kHz, scanning speed be 20mm/s~
500mm/s。
The DBC substrate can be Al2O3-DBC、AlN-DBC、Si3N4- DBC or BeO-DBC.In present embodiment,
The DBC substrate is composite construction comprising ceramic layer 1 and the copper foil being formed on two opposite surfaces of the ceramic layer 1
Layer 2；The through-hole sequentially passes through the copper foil layer 2, the ceramic layer 1 and the copper foil layer 2, forms seed layer 3 on inner wall；
The ceramic layer 1 with a thickness of 0.3mm~1mm, the copper foil layer 2 with a thickness of 0.15mm~0.3mm, the DBC substrate
With a thickness of 0.6mm~1.6mm.
Step 2 carries out plating filling perforation to the through-hole using pulse plating regime using the seed layer as seed layer
To form fine copper column in the through-hole, two that the DBC substrate is disposed opposite to each other are electrically connected in the both ends of the fine copper column
A copper foil layer.
Specifically, plating filling perforation is carried out using pulse plating regime, utilizes the inducing action of the seed layer 3 and pulse electricity
The phase transformation of stream promotes metallic copper preferentially in the filling of the centre of the through-hole to form bridge joint, finally in the entire through-hole
Full fine copper is filled to form fine copper column 4, the both ends of the fine copper column 4 are electrically connected two copper foil layers 2, are achieved in
The two-sided interconnection of fine copper column of high quality.
In present embodiment, by the DBC substrate of process laser punching as plating filling perforation is carried out in electroplate liquid, with institute
Seed layer 3 in through-hole is stated as plating seed layer, and controls electroplating technical conditions, with filled in the through-hole low resistance,
High thermal conductivity, imperforate fine copper column, are achieved in the interconnection of two-sided copper foil layer.
In electroplate liquid used by present embodiment, the concentration of copper sulphate is 60~90g/L, the concentration of sulfuric acid is 180~
220g/L, the concentration of chloride ion are 0.04~0.08g/L, and the concentration of additive is 2~5ml/L；Phosphorus copper plate conduct is used simultaneously
Anode material, operating temperature are 18 DEG C~30 DEG C, current density 1.5A/dm2~2.5A/dm2, using uniform air stirring,
Mechanical movable cathode, movement speed control is in 0.6/min~14m/min, and duration filters.
Below with several specific embodiments to the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate provided by the invention
Method be described in further detail.
Embodiment 1
(1) using pulse laser in Al2O3The predeterminated position of-DBC substrate prepares through-hole.Al used2O3- DBC substrate it is total
With a thickness of 0.9mm, wherein alumina ceramic layer with a thickness of 0.5mm, double-sided copper-clad thickness degree is 0.2mm.Laser source uses
Peak power output is 150W, and pulse width is 50ns~100ns, and pulse recurrence frequency is 1000Hz~2000Hz, and wavelength is
The optical fiber laser of 1064nm.Specifically, which is fixed on three-shaft linkage numerically controlled machine, controls laser
Focal position is scanned in substrate surface according to the helix fill path that CAD software design generates.Wherein, laser is set
Output power is 30W, and pulse recurrence frequency is that (energy density of laser is 9.55 × 10 to 1000Hz at this time3J/cm2), scanning speed
Degree is 100mm/s；The through-hole that diameter is 0.2mm is formed on DBC substrate, while cladding has copper seed layer on hole wall, the logical seed
Crystal layer with a thickness of 0.02mm, and as subsequent plating seed layer.
(2) will through step (1), treated that the DBC substrate is soaked in electroplate liquid, and uniformly clamped in surrounding；Simultaneously
Using phosphorus copper plate as anode material, control current density is 2A/m2, bath temperature is 25 DEG C, is taken out after 4h is electroplated, final
To the fine copper pole interconnection structure of high thickness to diameter ratio (4.5:1), the electric connection of two-sided copper foil layer is realized.
Embodiment 2
(1) through-hole is prepared in the predeterminated position of AlN-DBC substrate using pulse laser.The total thickness of AlN-DBC substrate used
Degree be 1.6mm, wherein aluminium nitride ceramics layer with a thickness of 1.0mm, double-sided copper-clad thickness degree is 0.3mm.Laser source is using most
Big output power is 500W, and pulse width is 90ns~120ns, and pulse recurrence frequency is 50kHz~100kHz, and wavelength is
The optical fiber laser of 1064nm.Specifically, which is fixed on three-shaft linkage numerically controlled machine, controls laser
Focal position is scanned in substrate surface according to the concentric circles fill path that CAD software design generates；Laser output work is set
Rate is 200W, and pulse recurrence frequency is that (energy density of laser is 3.18 × 10 to 50kHz at this time2J/cm2), scanning speed is
Thus 500mm/s forms the through-hole that diameter is 0.4mm on DBC substrate, while cladding has copper seed layer on hole wall, the copper seed
Crystal layer with a thickness of 0.03mm, and the seed layer as subsequent plating.
(2) by step (1), treated that the substrate is soaked in electroplate liquid, and surrounding is uniformly clamped；Using phosphorus copper plate
As anode material, control current density is 2A/m2, bath temperature is 25 DEG C, takes out after 8h is electroplated, finally obtains high thickness to diameter ratio
The fine copper pole interconnection structure of (4:1).
The method of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate provided by the invention, this method is laser drill
Technology and pulse plating techniques combine the preparation of the high quality fine copper through-hole on DBC substrate, and using sharp in DBC substrate
The drilling of light one-step method and the via hole, can directly be electroplated filling perforation after drilling, simple process is efficient.In addition, using pulse plating
The resistivity that technology fills the fine copper column that through-hole is formed is low, and thermal conductivity is high, and heat shock resistance, pore-free can satisfy electronic product
The requirement developed to high power, high density, high reliability.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of method of the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate, which is characterized in that this method includes following
Step:
(1) through-hole is cut on DBC substrate using pulse laser, the through-hole runs through the DBC substrate, and melts on its hole wall
It is covered with copper seed crystal thin layer, seed layer of the copper seed crystal thin layer as subsequent plating；
(2) using the seed layer as seed layer, pulse plating regime is used to carry out plating filling perforation described to the through-hole
Fine copper column is formed in through-hole, two copper foil layers that the DBC substrate is disposed opposite to each other are electrically connected in the both ends of the fine copper column,
It is achieved in the electric connection of two-sided copper foil layer.
2. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in claim 1, it is characterised in that: institute
Stating DBC substrate is composite construction comprising ceramic layer and the copper foil being formed on two opposite surfaces of the ceramic layer
Layer；The through-hole sequentially pass through one in two copper foil layers, it is another in the ceramic substrate and two copper foil layers
One.
3. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as claimed in claim 2, it is characterised in that: institute
State ceramic layer with a thickness of 0.3mm~1mm, the copper foil layer with a thickness of 0.15mm~0.3mm, the thickness of the DBC substrate
For 0.6mm~1.6mm.
4. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in claim 1, it is characterised in that: step
Suddenly in (1), it is direct that the plumage brightness that fusing and gasification are formed by occurs under the action of laser beam for the metallic copper and ceramics of the DBC
It sputters on the hole wall of the through-hole, to form the copper seed crystal thin layer on the hole wall.
5. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in claim 1, it is characterised in that: institute
The aperture for stating through-hole is 0.15mm~0.4mm, and radius-thickness ratio is greater than 4:1.
6. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in any one in claim 1-5, special
Sign is: the average output power of the pulse laser is 20w~500w, and pulse recurrence frequency is 1kHz~100kHz, scanning
Speed is 20mm/s~500mm/s.
7. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in any one in claim 1-5, special
Sign is: the DBC substrate is with any one of lower substrate: Al2O3- DBC substrate, AlN-DBC substrate, Si3N4- DBC substrate
And BeO-DBC substrate.
8. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in any one in claim 1-5, special
Sign is: in step (2), promoting metallic copper first described logical using the inducing action of the seed layer and the phase transformation of pulse current
Fill full fine copper in the through-hole finally in central part filling perforation to form the fine copper column in hole.
9. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as claimed in claim 8, it is characterised in that: electricity
Operating temperature when plating is 18 DEG C~30 DEG C, current density 1.5A/dm2~2.5A/dm2。
10. the method for the high thickness to diameter ratio through-hole interconnection of direct copper ceramic substrate as described in claim 1, it is characterised in that:
The energy density of the pulse laser is 3.18 × 102J/cm2~9.55 × 103J/cm2。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113702446A (en) * | 2021-09-03 | 2021-11-26 | 松山湖材料实验室 | Method for testing micro-resistance of through hole of ceramic substrate |
| CN115460798A (en) * | 2022-11-11 | 2022-12-09 | 四川富乐华半导体科技有限公司 | Hole filling method for ceramic substrate |
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| CN201563285U (en) * | 2009-11-02 | 2010-08-25 | 广东达进电子科技有限公司 | Novel ceramic circuit board |
| CN202533322U (en) * | 2012-01-06 | 2012-11-14 | 航天科工防御技术研究试验中心 | Device for testing intensity of element outlet terminal |
| CN104412720A (en) * | 2012-05-02 | 2015-03-11 | 陶瓷技术有限责任公司 | Method for producing ceramic circuit boards from ceramic substrates having metal-filled vias |
| CN106793571A (en) * | 2016-11-15 | 2017-05-31 | 深圳崇达多层线路板有限公司 | A kind of the electroplates in hole filling perforation method |
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| CN113702446A (en) * | 2021-09-03 | 2021-11-26 | 松山湖材料实验室 | Method for testing micro-resistance of through hole of ceramic substrate |
| CN113702446B (en) * | 2021-09-03 | 2023-11-03 | 松山湖材料实验室 | Micro-resistance testing method for ceramic substrate through hole |
| CN115460798A (en) * | 2022-11-11 | 2022-12-09 | 四川富乐华半导体科技有限公司 | Hole filling method for ceramic substrate |
| CN115460798B (en) * | 2022-11-11 | 2023-01-24 | 四川富乐华半导体科技有限公司 | Hole filling method of ceramic substrate |
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