CN115427962A - 半导体装置及电子设备 - Google Patents

半导体装置及电子设备 Download PDF

Info

Publication number
CN115427962A
CN115427962A CN202180028372.3A CN202180028372A CN115427962A CN 115427962 A CN115427962 A CN 115427962A CN 202180028372 A CN202180028372 A CN 202180028372A CN 115427962 A CN115427962 A CN 115427962A
Authority
CN
China
Prior art keywords
wiring
transistor
circuit
terminal
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180028372.3A
Other languages
English (en)
Chinese (zh)
Inventor
黑川义元
上妻宗广
青木健
金村卓郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN115427962A publication Critical patent/CN115427962A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/50—Adding; Subtracting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/52—Multiplying; Dividing
    • G06F7/523—Multiplying only
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/045—Combinations of networks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/048—Activation functions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Computing Systems (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Biomedical Technology (AREA)
  • Software Systems (AREA)
  • Biophysics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Artificial Intelligence (AREA)
  • Computational Linguistics (AREA)
  • Evolutionary Computation (AREA)
  • Molecular Biology (AREA)
  • Algebra (AREA)
  • Databases & Information Systems (AREA)
  • Neurology (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Complex Calculations (AREA)
CN202180028372.3A 2020-04-17 2021-04-05 半导体装置及电子设备 Pending CN115427962A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-074001 2020-04-17
JP2020074001 2020-04-17
PCT/IB2021/052804 WO2021209855A1 (ja) 2020-04-17 2021-04-05 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
CN115427962A true CN115427962A (zh) 2022-12-02

Family

ID=78084356

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180028372.3A Pending CN115427962A (zh) 2020-04-17 2021-04-05 半导体装置及电子设备

Country Status (4)

Country Link
US (1) US12376447B2 (https=)
JP (2) JP7571127B2 (https=)
CN (1) CN115427962A (https=)
WO (1) WO2021209855A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220326384A1 (en) * 2019-08-23 2022-10-13 Semiconductor Energy Laboratory Co., Ltd. Imaging device, distance estimation device, and moving object
US20210125049A1 (en) * 2019-10-29 2021-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. System for executing neural network
US12537233B2 (en) * 2020-02-21 2026-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power storage device, battery management circuit, electronic component, vehicle, and electronic device
WO2021209855A1 (ja) * 2020-04-17 2021-10-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP7596386B2 (ja) 2020-08-03 2024-12-09 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP2024126525A (ja) * 2023-03-07 2024-09-20 キヤノン株式会社 放射線検出器、放射線検出システムおよび放射線ｃｔ装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216243A1 (de) 2002-04-12 2003-10-30 Infineon Technologies Ag Eventdetection - Vorrichtung und Verfahren zur Messung der Aktivität neuronaler Netzwerke
US7809432B2 (en) 2002-04-12 2010-10-05 Infineon Technologies Ag Event detection—apparatus and method for measuring the activity of neural networks
JP5421475B2 (ja) 2012-07-04 2014-02-19 誠 雫石 撮像素子、半導体集積回路及び撮像装置
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9685469B2 (en) 2015-04-03 2017-06-20 Apple Inc. Display with semiconducting oxide and polysilicon transistors
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
JP6674838B2 (ja) 2015-05-21 2020-04-01 株式会社半導体エネルギー研究所 電子装置
CN108701480B (zh) 2016-03-10 2022-10-14 株式会社半导体能源研究所 半导体装置
KR102382727B1 (ko) 2016-03-18 2022-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 시스템
US9934826B2 (en) 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10109633B2 (en) 2016-04-27 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and authentication system
WO2018002774A1 (en) 2016-06-29 2018-01-04 Semiconductor Energy Laboratory Co., Ltd. Electronic device, operation method of the electronic device, and moving vehicle
JP6668182B2 (ja) 2016-06-30 2020-03-18 株式会社日立製作所 回路設計装置及びそれを用いた回路設計方法
US10319743B2 (en) 2016-12-16 2019-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display system, and electronic device
CN114628425A (zh) 2017-05-26 2022-06-14 株式会社半导体能源研究所 摄像装置及电子设备
JP6956784B2 (ja) 2017-06-08 2021-11-02 株式会社半導体エネルギー研究所 撮像装置
KR102674906B1 (ko) 2017-06-27 2024-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 시스템 및 데이터 처리 방법
JP2019047006A (ja) * 2017-09-05 2019-03-22 株式会社半導体エネルギー研究所 半導体装置、電子機器
WO2020254909A1 (ja) 2019-06-21 2020-12-24 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12002535B2 (en) 2019-09-20 2024-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising memory cell array and arithmetic circuit
US12585431B2 (en) 2019-12-27 2026-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR20220144838A (ko) 2020-02-21 2022-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2021209855A1 (ja) * 2020-04-17 2021-10-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

Also Published As

Publication number Publication date
JPWO2021209855A1 (https=) 2021-10-21
JP2025003452A (ja) 2025-01-09
WO2021209855A1 (ja) 2021-10-21
JP7571127B2 (ja) 2024-10-22
US20230132059A1 (en) 2023-04-27
US12376447B2 (en) 2025-07-29

Similar Documents

Publication Publication Date Title
JP7724347B2 (ja) 半導体装置、及び電子機器
JP7571127B2 (ja) 半導体装置、及び電子機器
TWI827696B (zh) 半導體裝置及電子裝置
JP7595057B2 (ja) 半導体装置、及び電子機器
JP7769057B2 (ja) 半導体装置
TWI865775B (zh) 半導體裝置及電子裝置
JP7693562B2 (ja) 半導体装置、及び撮像装置
CN115769221A (zh) 半导体装置及电子设备
JP7769086B2 (ja) 半導体装置
CN113826103A (zh) 半导体装置及电子设备
CN116134442A (zh) 半导体装置及电子设备
CN115836293A (zh) 半导体装置及电子设备
CN116076085A (zh) 摄像装置及电子设备
TWI917429B (zh) 攝像裝置及電子裝置
JP2021043712A (ja) 半導体装置、及び電子機器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination