CN115410971A - GaN基复合衬底、GaN基器件及其制作方法 - Google Patents
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Abstract
本发明提供了一种GaN基复合衬底、GaN基器件及其制作方法，GaN基复合衬底包括：隔离衬底、GaN基衬底，以及位于隔离衬底与GaN基衬底之间的键合层。本发明采用GaN基复合衬底取代GaN基材料衬底，复合衬底通过键合层将GaN基衬底与隔离衬底键合在一起，隔离衬底无沿厚度方向延伸的缺陷，可封堵化学腐蚀液通过GaN基衬底中的孔洞向下渗漏的路径，避免机台以及产线的污染，从而可获得质量较好的GaN基器件层，进而提高GaN基器件的良率。
Description
技术领域
本发明涉及半导体技术领域，尤其涉及一种GaN基复合衬底、GaN基器件及其制作方法。
背景技术
III族氮化物是继Si、GaAs等第一、第二代半导体材料之后的第三代新型半导体材料，其中GaN作为宽禁带半导体材料有许多优点，诸如饱和漂移速度高、击穿电压大、载流子输运性能优异以及能够形成AlGaN、InGaN三元合金和AlInGaN四元合金等，容易制作GaN基的PN结。鉴于此，近几年来GaN基材料和半导体器件得到了广泛和深入的研究，MOCVD(Metal-organic Chemical Vapor Deposition，金属有机物化学气相沉积)技术生长GaN基材料日趋成熟；在半导体器件研究方面，GaN基LED、LDs等光电子器件以及GaN基HEMT等微电子器件方面的研究都取得了显著的成绩和长足的发展。
良率，亦称“合格率”，是半导体产品质量的一项重要指标，指合格品量占全部加工品的百分率。如何提高GaN基器件的良率，是行业内普遍需解决的技术问题。
发明内容
本发明的发明目的是提供一种GaN基复合衬底、GaN基器件及其制作方法，提高GaN基器件的良率。
为实现上述目的，本发明的第一方面提供一种GaN基复合衬底，包括：隔离衬底、GaN基衬底，以及位于所述隔离衬底与所述GaN基衬底之间的键合层。
可选地，所述GaN基衬底的材料包括：GaN或AlGaN。
可选地，所述GaN基衬底为单层结构或叠层结构。
可选地，所述隔离衬底的材料为单晶硅或三氧化二铝。
可选地，所述隔离衬底为单层结构或叠层结构。
可选地，所述键合层的材料为金属铝、金属金、硅金合金、金锡合金，以及铜锡合金中的至少一种。
本发明的第二方面提供一种GaN基器件，包括：上述任一项所述的GaN基复合衬底，以及位于所述GaN基复合衬底上的GaN基器件层，所述GaN基器件层靠近所述GaN基衬底。
本发明的第三方面提供一种GaN基器件的制作方法，包括：
在上述任一项所述的GaN基复合衬底上外延生长GaN基器件层，所述GaN基器件层靠近所述GaN基衬底；
剥离所述隔离衬底。
可选地，剥离所述隔离衬底包括：采用加热法熔化所述键合层；或化学腐蚀所述键合层。
对于如何提高GaN基器件的良率，相关技术中采用了多种方案，例如采用更佳的器件结构设计、使用更合理的工艺参数等。然而，本发明人通过对工艺制程进行分析，发现良率降低的一个原因在于：GaN基材料或多或少存在缺陷，主要是一些沿厚度方向延伸的孔洞，造成使用GaN基材料作为衬底制作GaN基器件工艺中，一些化学腐蚀液，例如显影液等，会通过孔洞向下渗漏，引起机台以及产线的污染。
要解决上述问题，一种方案是提高GaN基材料的质量，减少甚至避免缺陷。此方案成本较高，且工艺方向不明确。
与现有技术相比，本发明的有益效果在于：
本发明采用GaN基复合衬底取代GaN基材料衬底，复合衬底通过键合层将GaN基衬底与隔离衬底键合在一起，隔离衬底无沿厚度方向延伸的缺陷，可封堵化学腐蚀液通过GaN基衬底中的孔洞向下渗漏的路径，避免机台以及产线的污染，从而可获得质量较好的GaN基器件层，进而提高GaN基器件的良率。
附图说明
图1是本发明第一实施例的GaN基复合衬底的截面结构示意图；
图2是本发明第二实施例的GaN基复合衬底的截面结构示意图；
图3是本发明第三实施例的GaN基复合衬底的截面结构示意图；
图4是本发明第四实施例的GaN基器件的截面结构示意图；
图5是本发明第五实施例的GaN基器件的截面结构示意图；
图6是图5的GaN基器件的制作方法的流程图。
为方便理解本发明，以下列出本发明中出现的所有附图标记：
GaN基复合衬底1、2、3 隔离衬底10
GaN基衬底11 键合层12
第一隔离衬底101 第二隔离衬底102
第一GaN基衬底111 第二GaN基衬底112
GaN基器件4、5 GaN基器件层21
具体实施方式
为使本发明的上述目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施例做详细的说明。
图1是本发明第一实施例的GaN基复合衬底的截面结构示意图。
参照图1所示，GaN基复合衬底1包括：隔离衬底10、GaN基衬底11，以及位于隔离衬底10与GaN基衬底11之间的键合层12。
本实施例中，隔离衬底10与GaN基衬底11都为单层结构。单层隔离衬底10的材料可以为单晶硅或三氧化二铝。单晶硅衬底的制作工艺成熟，晶格缺陷较少，三氧化二铝结构致密，两者都可以起到封堵液体继续向下流动的作用。单层GaN基衬底11的材料可以为GaN或AlGaN。单层GaN基衬底11的材料可以基于后续外延生长的具体材料进行合理选择。
键合层12的材料可以为金属铝、金属金、硅金合金、金锡合金，以及铜锡合金中的至少一种。上述材料能实现隔离衬底10与GaN基衬底11之间的牢固结合，且在加热时易熔融，方便隔离衬底10从GaN基衬底11上剥下。
图2是本发明第二实施例的GaN基复合衬底的截面结构示意图。
参照图2与图1所示，本实施例二的GaN基复合衬底2与实施例一的GaN基复合衬底1大致相同，区别仅在于：隔离衬底10包括：第一隔离衬底101与第二隔离衬底102，第二隔离衬底102靠近键合层12。换言之，隔离衬底10为叠层结构。
第一隔离衬底101的材料可以为单晶硅，第二隔离衬底102的材料可以为三氧化二铝。叠层结构相对于单层结构，可以进一步防止液体继续向下流动至机台。
其它实施例中，叠层结构也可以包括三层及其以上。
图3是本发明第三实施例的GaN基复合衬底的截面结构示意图。
参照图3、图2与图1所示，本实施例三的GaN基复合衬底3与实施例一、二的GaN基复合衬底1、2大致相同，区别仅在于：GaN基衬底11包括：第一GaN基衬底111与第二GaN基衬底112，第一GaN基衬底111靠近键合层12。换言之，GaN基衬底11为叠层结构。
第二GaN基衬底112的缺陷密度小于第一GaN基衬底111的缺陷密度，以提高后续外延生长的GaN基器件层的质量。第一GaN基衬底111与第二GaN基衬底112与材料可以相同或不同。
图4是本发明第四实施例的GaN基器件的截面结构示意图。
参照图4所示，GaN基器件4包括：上述任一GaN基复合衬底1、2、3，以及位于GaN基复合衬底1、2、3上的GaN基器件层21，GaN基器件层21靠近GaN基衬底11。
GaN基器件层21可以包括外延生长工艺以及图形化工艺。
由于GaN基复合衬底1、2、3的隔离衬底10无沿厚度方向延伸的缺陷，可封堵化学腐蚀液通过GaN基衬底11中的孔洞向下渗漏的路径，因而可避免机台以及产线的污染，从而可获得质量较好的GaN基器件层21，进而提高GaN基器件4的良率。
图5是本发明第五实施例的GaN基器件的截面结构示意图。
参照图5与图4所示，本实施例五的GaN基器件5与实施例四的GaN基器件4大致相同，区别仅在于：剥离了隔离衬底10与键合层12。
GaN基器件5可利于器件轻薄化以及利于器件散热。
图6是图5的GaN基器件的制作方法的流程图。
参照图6所示，GaN基器件的制作方法包括：步骤S1，在上述任一GaN基复合衬底1、2、3上外延生长GaN基器件层21，GaN基器件层21靠近GaN基衬底11；步骤S2，剥离隔离衬底10。
剥离隔离衬底10可以包括：采用加热法熔化键合层12；或化学腐蚀键合层12。
化学腐蚀键合层12可通过酸性溶液实现。
虽然本发明披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。
Claims (9)
1.一种GaN基复合衬底，其特征在于，包括：隔离衬底(10)、GaN基衬底(11)，以及位于所述隔离衬底(10)与所述GaN基衬底(11)之间的键合层(12)。
2.根据权利要求1所述的GaN基复合衬底，其特征在于，所述GaN基衬底(11)的材料包括：GaN或AlGaN。
3.根据权利要求1或2所述的GaN基复合衬底，其特征在于，所述GaN基衬底(11)为单层结构或叠层结构。
4.根据权利要求1所述的GaN基复合衬底，其特征在于，所述隔离衬底(10)的材料为单晶硅或三氧化二铝。
5.根据权利要求4所述的GaN基复合衬底，其特征在于，所述隔离衬底(10)为单层结构或叠层结构。
6.根据权利要求1或4述的GaN基复合衬底，其特征在于，所述键合层(12)的材料为金属铝、金属金、硅金合金、金锡合金，以及铜锡合金中的至少一种。
7.一种GaN基器件，其特征在于，包括：权利要求1至6任一项所述的GaN基复合衬底，以及位于所述GaN基复合衬底上的GaN基器件层(21)，所述GaN基器件层(21)靠近所述GaN基衬底(11)。
8.一种GaN基器件的制作方法，其特征在于，包括：
在权利要求1至6任一项所述的GaN基复合衬底上外延生长GaN基器件层(21)，所述GaN基器件层(21)靠近所述GaN基衬底(11)；
剥离所述隔离衬底(10)。
9.根据权利要求8所述的GaN基器件的制作方法，其特征在于，剥离所述隔离衬底(10)包括：采用加热法熔化所述键合层(12)；或化学腐蚀所述键合层(12)。
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| CN (1) | CN115410971A (zh) |
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2021
- 2021-05-26 CN CN202110578692.8A patent/CN115410971A/zh active Pending
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