CN115312440A - 转移电子组件的方法 - Google Patents

转移电子组件的方法 Download PDF

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Publication number
CN115312440A
CN115312440A CN202210088768.3A CN202210088768A CN115312440A CN 115312440 A CN115312440 A CN 115312440A CN 202210088768 A CN202210088768 A CN 202210088768A CN 115312440 A CN115312440 A CN 115312440A
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CN
China
Prior art keywords
flexible carrier
thimble
target substrate
electronic component
electronic components
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Pending
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CN202210088768.3A
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English (en)
Inventor
黄育民
黄圣哲
林清儒
王玮豪
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Stoke Precision Technology Co ltd
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Stoke Precision Technology Co ltd
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Publication date
Priority claimed from TW110127169A external-priority patent/TWI777684B/zh
Application filed by Stoke Precision Technology Co ltd filed Critical Stoke Precision Technology Co ltd
Publication of CN115312440A publication Critical patent/CN115312440A/zh
Pending legal-status Critical Current

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Abstract

本发明提供一种转移电子组件的方法，其包括以下步骤：提供可挠性载体，其一面上载有多个电子组件；提供目标基板，使其与可挠性载体的该面对应配置；提供顶针，以顶针的顶抵端部顶抵可挠性载体非载有电子组件的该面的另一面上，使可挠性载体产生形变，致至少一个电子组件向目标基板移动，并接触目标基板；提供光束，使其通过顶针的至少一部份，并自顶抵端部射出，以熔融焊料，经由焊料将电子组件焊固于目标基板上；以及移动顶针，使可挠性载体回复原状，而使焊固的电子组件脱离可挠性载体。

Description

转移电子组件的方法
技术领域
本发明涉及一种转移组件的方法，尤其涉及一种转移电子组件的方法。
背景技术
在电子产品的制造过程中，常会有相关的电子组件转移步骤。举例而言，在发光二极管显示面板(LED display)的制造过程中，常会先经由取放装置(Pick-and-placeapparatus)将发光二极管置于薄膜晶体管阵列基板(TFT array substrate)上，然后才将位于薄膜晶体管阵列基板上的发光二极管固定且电连接于薄膜晶体管阵列基板。然而，在经由上述的方式中，若在发光二极管置于薄膜晶体管阵列基板上之后且在使发光二极管固定于薄膜晶体管阵列基板之前，环境或设备稍有震动，则可能导致未固定的发光二极管有偏移的可能。并且，上述方式的生产率(throughput)可能较低。
发明内容
本发明是针对一种转移电子组件的方法。
根据本发明的实施例，转移电子组件的方法包括以下步骤：提供可挠性载体，其上载有多个电子组件；提供目标基板，使其与可挠性载体设有多数个电子组件的一面相对配置；提供顶针，以顶针的顶抵端部顶抵可挠性载体未载有多数个电子组件的另一面上，使可挠性载体产生形变，致多个电子组件中的一个电子组件向目标基板移动，并接触目标基板；提供能量光束，使能量光束通过顶针的至少一部份，并自顶针的顶抵端部射出，熔融相对于接触目标基板的电子组件所设置的焊料，经由焊料将电子组件焊固于目标基板上；以及移动顶针，使可挠性载体回复原状，而使焊固的电子组件脱离可挠性载体。
基于上述，可以经由转移电子组件的方法将可挠性载体上的电子组件转移并焊固于目标基板上。
附图说明
图1至图7是依照本发明的实施例的一种转移电子组件的装置的部分作动方式的部分侧视示意图。
图8是依照本发明的实施例的一种转移电子组件的装置的部分作动方式的对应时序示意图。
图9A是依照本发明的实施例的一种转移电子组件的装置的于作动时的部分侧视示意图。
图9B是依照本发明的实施例的一种转移电子组件的装置的于作动时的部分上视示意图。
图10是依照本发明的实施例的一种转移电子组件的装置的于作动时的部分侧视示意图。
附图标记说明
100：装置；
110：第一框架；
120：第二框架；
130：致动机构；
140：光源；
150：控制系统；
151：输入单元；
152：输出单元；
153：运算单元；
154：储存单元；
159：信号线；
160：云端系统；
200：顶针；
220、230：端部；
300：可挠性载体；
300a、300b：表面；
310：载体框；
400、401、402：电子组件；
430：晶粒；
450：导电连接件；
500：目标基板；
540：接垫；
610：弹性体；
620：载件；
620b：承载面；
630：扣件；
D1：顶抵方向；
L1、L2：光束；
t1、t2、t3、t4、t5：时序。
具体实施方式
现将详细地参考本发明的示范性实施例，示范性实施例的实例说明于附图中。
以下实施例的内容是为了说明而非限制。并且，可省略对熟知装置、方法及材料的描述以免模糊对本发明的各种原理的描述。本文所使用的方向术语(例如，上、下、顶部、底部)仅参看所示附图使用或对应的习惯用语，且不意欲暗示绝对定向。另外，除非内容清楚地指示，否则单数形式“一”、“一个”、“该”或未特别表示数量的形式可以包括一个或多数个的形式，即，包括“至少一个”。
在部分的附图中，为了清楚起见，可能放大、缩小或省略示出了部分的组件或膜层。类似的构件以相同的标记表示，且具有类似的功能、材质或形成方式，并省略描述。本发明所属技术领域中具有通常知识者将显而易见的是，经由实施例的内容及对应的附图说明，可以在脱离本文所揭示特定细节的其他实施例中实践本发明。
请参照图1，提供可挠性载体300。可挠性载体上300可以载有多数个电子组件400。值得注意的是，于图1中，配置于可挠性载体300上的电子组件400的数量及/或配置方式仅为示例性地示出，于本发明并不加以限定。
在本实施例中，可挠性载体300可以包括紫外线胶带(UV tape)或蓝膜(bluetape)，但本发明不限于此。在一个实施例中，可挠性载体300可以被载体框310固定，但本发明不限于此。在一个实施例中，载体框310可以被称为蓝膜框，但本发明不限于此。
在一个实施例中，可挠性载体300可以是复合材料。举例而言，可挠性载体300可以具有胶层覆盖于其上的高分子薄膜或超薄玻璃。
在本实施例中，电子组件400可以包括晶粒430及配置于晶粒430上的导电连接件450，但本发明不限于此。晶粒430可以包括发光晶粒(如：发光二极管晶粒；但不限)或集成电路(integrated circuit；IC)，但本发明不限于此。光源140所投射的至少一种光束可以适于熔融至少部分的导电连接件450。在一个实施例中，导电连接件450例如包括焊料，但本发明不限于此。
在本实施例中，可挠性载体300可以被承载于第一框架110上。在一个实施例中，第一框架110可以被固定或架设于可动单元上。如此一来，第一框架110可以依据设计上的需求而在对应的方向上移动及/或转动。可动单元可以包括一般在可动机构设计上常用的可动模块(如：水平移动模块、垂直移动模块、转动移动模块或上述的组合)，其中可以包含对应的硬件或软件，或是进一步结合辅助件。举例而言，可动模块可以有供电装置、马达、皮带、齿轮及其他相关组件等，于本发明并不加以限制。前述的相关组件例如包括通讯组件、功率组件等，于本发明并不加以限制。前述的软件例如包括空间位置运算软件、错误记录软件、通讯软件等，于本发明并不加以限制。前述辅助件例如包括移动轨道、移动轴、减震组件、定位装置等，于本发明并不加以限制。
在本实施例中，第一框架110的材质可以包括金属、玻璃或塑料，但本发明不限于此。在一个实施例中，第一框架110可以包括对应的固定件(如：夹具及/或卡件；但不限)，而可以适于直接地及/或间接地固定可挠性载体300。举例而言，第一框架110可以经由载体框310间接地固定可挠性载体300。又举例而言，第一框架110与可挠性载体300相接触之处，可以经由彼此间的摩擦力或其他适宜的方式直接地固定可挠性载体300。
在一个实施例中，第一框架110可以包括对应的传动件(如：滚轮；但不限)，而可以使可挠性载体300沿着适当的方向传送。值得注意的是，前述的固定件与前述的传动件可以是相同的构件，也可以是不同的构件。举例而言，可挠性载体300可以被夹于两个滚轮之间，而在未转动滚轮的状态下，可挠性载体300可以对应地被固定；而在转动滚轮的状态下，可挠性载体300可以对应地被传送。
请继续参照图1，提供目标基板。
在本实施例中，目标基板500可以包括对应的线路，其中线路可以包括暴露于外的对应接垫540。在一个实施例中，目标基板500可以包括硬质电路板或软性电路板，但本发明不限于此。在一个实施例中，目标基板500还可以是包括主动组件的线路板(如：薄膜晶体管阵列基板(TFT array substrate)，但不限)。
在一个未示出的实施例中，电子组件400可以包括类似于晶粒430的晶粒，且目标基板500上可以具有类似于导电连接件450的对应导电连接件。
在本实施例中，目标基板500可以被承载于第二框架120上。在一个实施例中，第二框架120可以被固定或架设于可动单元上。如此一来，第二框架120可以依据设计上的需求而在对应的方向上移动及/或转动。
在本实施例中，第二框架120可以不透光。第二框架120的材质可以包括金属、塑料或其他适于支撑或固定目标基板500的材质。
值得注意的是，本发明并未限定提供目标基板500及提供可挠性载体300之间的先后顺序。并且，在提供目标基板500及提供可挠性载体300之后，可挠性载体300设有多数个电子组件400的一面可以与目标基板500相对配置。并且，配置于可挠性载体300上的电子组件400与目标基板500面相对且其之间具有一个对应距离。值得注意的是，于图1中，将目标基板500配置于装置100的第二框架120上的方式及/或将可挠性载体300配置于第一框架110上的方式仅为示例性地示出，于本发明并不加以限定。
请继续参照图1，提供顶针。顶针200的材质可以适于使光源140投射的光束穿透于其。光源140投射的光束对顶针200的材质的穿透率例如：大于或等于50％；大于或等于60％；大于或等于70％；大于或等于75％；大于或等于80％；大于或等于85％；大于或等于90％；大于或等于95％；或大于或等于98％。在一个实施例中，顶针200的材质可以为石英，但本发明不限于此。在一个实施例中，顶针200的材质可以包括蓝宝石(Sapphire；如：人造蓝宝石)或钻石(如：人造钻石)。
在本实施例中，顶针200可以是均质材料(homogeneous material)，且前述的均质材料无法再经由机械方法(如：破碎、剪、切、锯、磨等方式)将组件拆离成不同的单一材料。换句话说，在顶针200的内部可以不具有因不同材质、不同工艺(如：相黏着)及/或不同物件(如：嵌入物)所形成的界面(interface)。
在本实施例中，光源140可以投射一种或多种光束。前述的多种光束所指的可以是不同的光束间具有不同的主波长；或是，不同的光束间具有相同的主波长，但具有不同的总能量或能量密度；或是，不同的光束间具有不同的主波长，且具有不同的总能量或能量密度。光源140所投射的光束可以从相对于顶抵端部230的另一端部220射入顶针200，并从顶针200的顶抵端部230射出。也就是说，光束可以通过顶针200的至少一部分，并由顶针200的顶抵端部230射向可挠性载体300。
在本实施例中，光源140所投射的光束还可以穿透可挠性载体300。举例而言，可挠性载体300可以具有第一表面300a及第二表面300b。第二表面300b相对于第一表面300a。电子组件400位于第二表面300b上。光源140所投射的光束可以由从第一表面300a向第二表面300b的方向穿透可挠性载体300。
在一个实施例中，光源140所投射的光束可以是激光束。在一个实施例中，光源140所投射的光束可以是红外线光束(如：波长约为1064纳米(nanometer；nm)的光束；但不限)。举例而言，光源140所投射的光束可以是红外线激光束。
在本实施例中，顶针200可以经由致动机构130而被直接地或间接地致动，以向可挠性载体300的方向相对地移动。致动机构130可以包括一般在可动机构设计上常用的可动模块(如：水平移动模块、垂直移动模块、转动移动模块或上述的组合)，其中可以包含对应的硬件或软件，或是进一步结合辅助件。举例而言，可动模块可以有供电装置、马达、皮带、齿轮及其他相关组件等，于本发明并不加以限制。前述的相关组件例如包括通讯组件、功率组件等，于本发明并不加以限制。前述的软件例如包括空间位置运算软件、错误记录软件、通讯软件等，于本发明并不加以限制。前述辅助件例如包括移动轨道、移动轴、减震组件、定位装置等，于本发明并不加以限制。如此一来，可以使直接地或间接地固定于致动机构130的顶针200可以依据设计上的需求而在对应的方向上移动及/或转动。
在一个实施例中，如图9A或图9B所示地，顶针200可以被间接地固定于致动机构130，其中图9B可以是对应于图9A的上视示意图。并且，为清楚表示，于图9B中省略示出了如图9A中的扣件630。
如图9A或图9B所示，载件620可以具有对应于顶针200的承载面620b，且扣件630对应于载件620设置，其中承载面620b可以是斜面。如此一来，可以使顶针200可以被直接地或间接地容置于载件620内。举例而言，扣件630与顶针200之间可以具有对应的弹性体610，扣件630可以经由弹性体610间接地抵扣顶针200。
在一个实施例中，扣件630与载件620之间、扣件630与致动机构130之间及/或致动机构130与载件620之间可以经由常用的固定件(未示出；如：螺丝、扣环、黏胶及/或两构件之间对应的螺纹；但不限)而相互固定，但本发明不限于此。弹性体610例如是常用的O型圈(O-ring)，但本发明不限于此。
请参照图1及图9A，在一个实施例中，顶针200可以与载件620的承载面620b相接触。
在一个实施例中，于将具有至少一个电子组件400配置于其上的可挠性载体300及目标基板500配置在对应处之后，可以选择性地经由光源140对可挠性载体300上的电子组件400投射光束L1。光束L1可以是预热光束，但本发明不限于此。在一个可能的实施例中，光束L1可以是对位光束或扫描光束。
另外，于图1或其他类似的附图中，对于光束的光径仅为示意性地示出。在一个未示出的实施例中，在光束的光径上，可以设置适宜的光学组件(如：光反射组件、透镜、滤光片、光圈等；但不限)。
请参照图1至图2(如：对应于图8中的时序t1至t2)，顶针200与可挠性载体300在顶抵方向D1上相靠近，以进一步地使顶针200的顶抵端部230顶抵可挠性载体300未载有电子组件400的一面(如：第一表面300a)上。
请参照图2至图3，还可以使顶针200进一步地顶抵可挠性载体300，以使可挠性载体300产生对应的形变(即：使可挠性载体300向目标基板500的方向弯曲)。并且，可以经由顶针200与目标基板500相靠近的方式，以致使顶针200所对应的一个电子组件401(多个电子组件400中的其中之一)与目标基板500相接近。如此一来，可以如图4所示出地，使顶针200在顶抵可挠性载体300处所对应的电子组件401接触目标基板500。
在本实施例中，于平行于顶抵方向D1的方向上，顶针200可以为动件，且第一框架110及第二框架120不为动件，但本发明不限于此。在一个未示出实施例中，于平行于顶抵方向D1的方向上，第一框架110及第二框架120可以为动件，且顶针200不为动件。在一个未示出实施例中，于平行于顶抵方向D1的方向上，顶针200、第一框架110及第二框架120可以皆为动件。
请参照图3及图10，在一个实施例中，于顶针200顶抵可挠性载体300且使其产生对应的形变之后，顶针200可以与载件620的承载面620b相分离，且弹性体610可以对应地在平行于顶抵方向D1的方向上被压缩。
请参照图4(如：对应于图8中的时序t3)，使顶针200在所对应的电子组件401接触目标基板500时及/或之后，经由光源140对可挠性载体300上的电子组件401投射加热光束L2。加热光束L2可以通过顶针200的至少一部份，并自顶针200的顶抵端部230射出，以使顶针200所对应的电子组件401的导电连接件450至少部分地被熔融，而使被熔融的至少一部分导电连接件450可以接触目标基板500上对应的接垫540。然后，可以停止加热光束L2的投射(如：对应于图8中的时序t4)，并可经由适宜的方式散热(如：经由风扇或其他的主动散热方式；或是，静置一段时间的被动散热方式)，以使电子组件401焊固于目标基板500上而与目标基板500上对应的线路电连接。
请参照图4至图5及图8，使顶针200与目标基板500相远离，以使具有适当弹性/挠度的可挠性载体300可以如图6(如：对应于图8中的时序t5之后)所示出地回复原状。并且，由于在使电子组件401焊固于目标基板500上之后，电子组件401与目标基板500之间的接合力大于电子组件401与可挠性载体300之间的接合力，而可以使焊固于目标基板500上的电子组件401脱离载体。如此一来，可以经由前述单一步骤，以完成电子组件401的转移动作与焊接动作。
经由上述方式，可以将电子组件401从可挠性载体300上转移至目标基板500上。因此，转移电子组件(如：电子组件401或其他类似的电子组件)的方法也可以被称为转移焊接工艺(transfer bonding process)。
请参照图6至图7，在一个实施例中，在完成一个电子组件401的转移之后，可以使第一框架110、第二框架120、致动机构130及/或光源140在适当的方向(如：垂直于顶抵方向D1的一个方向)上移动，以经由相同或相似于前述的方式对另一个电子组件402(电子组件400的其中另一个)进行转移。
在本实施例中，第一框架110、第二框架120、致动机构130以及光源140可以构成装置100。换句话说，装置100可以包括第一框架、第二框架、致动机构以及光源，且装置100适于使电子组件400经由焊接的方式从可挠性载体300转移至目标基板500。也就是说，装置100可以被称为转移焊接装置。
在本实施例中，装置100还可以包括控制系统150。控制系统150可以经由对应的信号线159而以有线信号传输(wired signal transmission)的方式信号连接于对应的构件、组件或单元(如：第一框架110、第二框架120、致动机构130及/或光源140，但不限)，但本发明不限于此。在一个实施例中，控制系统150可以经由无线信号传输(wireless signaltransmission)的方式信号连接于对应的构件、组件或单元。也就是说，包括控制系统150及信号连接于其的第一框架110、第二框架120、致动机构130及光源140的装置100是同一设备或机台。另外，本发明中所提到的信号连接可以泛指有线信号传输或无线信号传输的连接方式。另外，本发明并未限定所有的信号连接方式需为相同或不同。
在本实施例中，控制系统150可以包含对应的硬件或软件。
在一个实施例中，控制系统150例如包括输入单元151、输出单元152、运算单元153及/或储存单元154。输入单元151例如包括键盘、鼠标、触控屏幕、信号接收端(如：对应的数据端口(data port)或天线)及/或其他适于数据输入的类似单元。输出单元152例如包括屏幕、打印机、信号输出端(如：对应的数据端口或天线)及/或其他适于数据输出的类似单元。运算单元153例如包括中央处理单元(Central Processing Unit；CPU)、图形处理单元(Graphics Processing Unit)、物理处理单元(Physics Processing Unit；PPU)或其他适于进行运算、逻辑判断及/或数据处理的类似单元。储存单元154例如包括内存、硬盘、磁盘阵列、数据库及/或其他适于进行永久性或暂时性数据储存的类似单元。
在一个实施例中，控制系统150也可以信号连接于云端系统160。云端系统160可以经由远程控制(remote control)的方式，而经由控制系统150进行输入、输出、运算、储存、监控、资料搜集、统计及/或其他适宜的操控。前述的云端系统160例如包括先进规划与排程系统(Advanced Planning and Scheduling System；APS system)、厂务监控系统(Facility Monitoring Control System；FMCS system)或其他适宜的工业控制系统(Industrial control system；ICS)，但本发明不限于此。
在一个实施例中，控制系统150例如包括适于进行逻辑判断的软件或适于进行先进过程控制(Advanced Process Control；APC)的平台(platform)及/或可程序化逻辑控制器(programmable logic controller；PLC)，但本发明不限于此。
综上所述，本发明的转移电子组件的方法可以经由顶针与光源的搭配，整合顶针的下压或转移动作与光源的照射或加热焊接动作，以直接性地从可挠性载体转移到目标基板上并进行焊接。如此一来，在电子组件的转移过程中可以提升对位精度或准度，进而可以提升焊接效果，且/或可以减少工艺时间、设备成本及/或耗材(如：临时载体及胶)的使用，而可以提升生产效率。并且，转移电子组件的方法可以搭配装置的使用，而使可用于转移电子组件的装置可适于将可挠性载体上的电子组件转移至目标基板上。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (9)

1.一种转移电子组件的方法，其特征在于，包括：
提供可挠性载体，其上载有多数个电子组件；
提供目标基板，使其与所述可挠性载体设有所述多数个电子组件的一面相对配置；
提供顶针，以所述顶针的顶抵端部顶抵所述可挠性载体未载有所述多数个电子组件的一面上，使所述可挠性载体产生形变，致所述多数个电子组件中的一个电子组件向所述目标基板移动，并接触所述目标基板；
提供能量光束，使所述能量光束通过所述顶针的至少一部份，并自所述顶针的所述顶抵端部射出，熔融相对于所述接触目标基板的所述电子组件所设置的焊料，经由所述焊料将所述电子组件焊固于所述目标基板上；以及
移动所述顶针，使所述可挠性载体回复原状，而使焊固的所述电子组件脱离所述可挠性载体。
2.根据权利要求1所述的方法，其中所述顶针的材质为光可透过者。
3.根据权利要求2所述的方法，其中所述顶针的材质为石英。
4.根据权利要求1所述的方法，其中所述能量光束为激光束。
5.根据权利要求1所述的方法，其中所述能量光束为红外线光束。
6.根据权利要求1所述的方法，其中所述焊料设置于所述电子组件上。
7.根据权利要求1所述的方法，其中所述焊料设置于所述目标基板上。
8.根据权利要求1所述的方法，其中所述能量光束于所述电子组件接触所述目标基板前被提供。
9.根据权利要求1所述的方法，其中所述能量光束于所述电子组件接触所述目标基板后，移动所述顶针使所述可挠性载体回复原状前，停止被提供。
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Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055652A (en) * 1990-10-01 1991-10-08 General Electric Company Laser soldering of flexible leads
DE19549635B4 (de) * 1995-02-15 2004-12-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Verbindung eines flexiblen Substrats mit einem Chip
EP0740495A3 (en) * 1995-04-12 1997-09-17 Matsushita Electric Ind Co Ltd Method and device for printing solder paste
CN1201364A (zh) * 1997-04-04 1998-12-09 太阳诱电株式会社 电路组件的制造方法及其装置
DE10123852C1 (de) * 2001-05-16 2003-01-23 Siemens Ag Verfahren zur Laserbearbeitung, insbesondere zum Laserlöten und/oder Laserschweissen, von Teilen mit hoher Reflektivität
JP4386929B2 (ja) * 2007-04-09 2009-12-16 日東電工株式会社 Ｔａｂ用テープキャリアの製造方法
JP5126712B2 (ja) * 2007-10-01 2013-01-23 澁谷工業株式会社 ボンディング装置
KR20110076876A (ko) * 2008-10-31 2011-07-06 도레이 카부시키가이샤 전자 부품과 가요성 필름 기판의 접합 방법 및 접합 장치
KR101042185B1 (ko) * 2009-03-31 2011-06-16 주식회사 신호 레이저용접장치 및 이를 이용한 레이저용접방법
US9161448B2 (en) * 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
JP6237979B2 (ja) * 2013-03-15 2017-11-29 澁谷工業株式会社 ボンディング装置
JP2014225586A (ja) 2013-05-17 2014-12-04 日清紡メカトロニクス株式会社 電子部品実装装置
US9633883B2 (en) * 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
US9916989B2 (en) 2016-04-15 2018-03-13 Amkor Technology, Inc. System and method for laser assisted bonding of semiconductor die
US10141215B2 (en) * 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10504767B2 (en) * 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10471545B2 (en) * 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
WO2018148275A1 (en) * 2017-02-07 2018-08-16 Rohinni, LLC Apparatus and method for stacking semiconductor devices
US20180248090A1 (en) * 2017-02-27 2018-08-30 Rohinni, LLC Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
TWI664882B (zh) 2017-10-02 2019-07-01 盟立自動化股份有限公司 雷射輔助接合裝置及半導體元件的製造方法
CN110494993B (zh) * 2018-03-14 2022-12-16 京东方科技集团股份有限公司 将多个微型发光二极管转移至目标基板的方法、阵列基板及其显示设备
US10410905B1 (en) * 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US11062923B2 (en) * 2018-09-28 2021-07-13 Rohinni, LLC Apparatus to control transfer parameters during transfer of semiconductor devices
US11362060B2 (en) * 2019-01-25 2022-06-14 Epistar Corporation Method and structure for die bonding using energy beam
TWI734956B (zh) * 2019-01-31 2021-08-01 惠特科技股份有限公司 半導體元件雷射焊接裝置及方法
KR102710097B1 (ko) * 2019-03-15 2024-09-26 주식회사 루멘스 마이크로 엘이디 디스플레이 모듈 제조 방법
KR20200129340A (ko) * 2019-05-08 2020-11-18 삼성전자주식회사 전사 장치 및 이를 이용한 마이크로 led 디스플레이의 제조 방법
KR102174929B1 (ko) * 2019-05-08 2020-11-05 레이저쎌 주식회사 레이저 리플로우 장치의 레이저 리플로우 방법
KR102376989B1 (ko) 2019-05-31 2022-03-21 레이저쎌 주식회사 선형 이송 방식의 레이저 리플로우 장치
KR20210062376A (ko) * 2019-11-21 2021-05-31 레이저쎌 주식회사 레이저 리플로우 장치 및 레이저 리플로우 방법
KR20210106056A (ko) * 2020-02-19 2021-08-30 한국전자통신연구원 레이저를 이용한 전사 및 접합 방법
EP3933902B1 (en) * 2020-06-29 2023-05-03 IMEC vzw A method for positioning components on a substrate

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