CN115302400B - Method for determining removal amount of upper surface and lower surface of wafer in double-sided grinding - Google Patents
Method for determining removal amount of upper surface and lower surface of wafer in double-sided grinding Download PDFInfo
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- CN115302400B CN115302400B CN202211194544.7A CN202211194544A CN115302400B CN 115302400 B CN115302400 B CN 115302400B CN 202211194544 A CN202211194544 A CN 202211194544A CN 115302400 B CN115302400 B CN 115302400B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention relates to a method for determining the removal amount of the upper surface and the lower surface of a wafer in double-sided grinding, wherein a wafer I and a wafer II are selected; measuring the thicknesses of the wafer I and the wafer II, wherein the measuring points are three points of the center point and the edge of the wafer and are marked; bonding the A surfaces of the wafer I and the wafer II, and rounding the bonded wafers into a concentric circle; starting a double-sided grinder to grind the wafer, and removing the abrasive on the surface of the wafer after grinding; separating the wafer I and the wafer II; cleaning the wafer I and the wafer II to remove the adhesive; measuring the thicknesses of the wafer I and the wafer II, wherein the measuring points are three points of the center point and the edge of the wafer and are marked; the measuring point is consistent with the measuring point before pasting, the measuring point mark of the wafer I is used for calculating the thickness variation before and after the same point on the surface of the wafer is ground through a subtraction method, the removal amount of the upper surface, the lower surface and the edge of the wafer in the double-sided grinding process is obtained, and the measuring accuracy is improved.
Description
Technical Field
The invention designs a method for determining the removal amount of the upper surface and the lower surface of a wafer in double-sided grinding, belonging to the field of processing of semiconductor materials.
Background
The double-side grinding process is mainly used for double-side grinding of a plane workpiece, and the working principle of the double-side grinding is as follows: the upper and lower grinding disks are driven by the motor to rotate in opposite directions, a workpiece is arranged between the upper and lower disks by the aid of the planetary wheel, the planetary wheel is meshed with the inner tooth and the outer gear ring respectively, the inner tooth and the outer gear ring drive the planetary wheel to revolve and rotate, the workpiece is driven by the planetary wheel to perform planetary motion between the upper and lower grinding/polishing disks, pressure is applied to the upper disk through the air cylinder, grinding liquid is filled in gaps between the upper and lower disks, and the upper and lower surfaces of the workpiece can be ground and processed simultaneously under the action of grinding materials. CN113601376A discloses a method for determining the polishing rate of a single surface in silicon carbide double-surface polishing, which comprises the steps of monitoring the changes of the widths of a silicon surface and a carbon surface in the polishing process by an edge profiler respectively, and calculating the polishing rates of the silicon surface and the carbon surface by a geometric relational expression, wherein the method depends heavily on the measurement precision of the edge profiler, the measurement error is large, and the method can be applicable only if the edge of a wafer is subjected to T-shaped chamfering; chinese patent CN112846977A discloses a method for reducing flatness error of a double-side grinding workpiece, which adopts a calculation formula of relative motion track between an upper disc or a lower disc and the workpiece to obtain instantaneous relative velocity between the workpiece and a grinding disc, then calculates material removal rate of each point according to Preston's equation, obtains turn-over time by calculating upper and lower surface shape change, and finally realizes convergence of double-side flatness through multiple turn-over.
The difference of the removal rates of the upper surface and the lower surface of the workpiece can directly influence the curvature and the warping degree of the processed workpiece, and the determination of the removal rates of the upper surface and the lower surface has guiding significance for adjusting a double-sided grinding process and improving the geometric parameters of a processed wafer; in addition, the workpiece needs to be chamfered before double-side grinding, and the determination of the removal rate of the upper surface and the lower surface has guiding significance on the adjustment of the chamfering process.
Disclosure of Invention
The invention aims at solving the problems that the double-sided grinding process is invisible, the relative speed of each point on the surface of a wafer is complex to calculate, the removal amount of the upper surface and the lower surface of the wafer cannot be accurately measured and the like, and provides a method for determining the removal amount of the upper surface and the lower surface of the wafer in double-sided grinding.
In order to achieve the purpose, the invention adopts the technical scheme that: a method of determining the amount of wafer top and bottom surface removal in double side lapping, comprising the steps of: step 1, selecting two wafers I and II with the same size and material; step 2, the thickness of the wafer I and the thickness of the wafer II are respectively measured by a non-contact thickness gauge, the measuring points are three points of the center point and the edge of the wafer, and the measuring point of the wafer I is marked as T1 0-1 、T1 1-1 、T1 2-1 、T1 3-1 The measuring point of the wafer II is marked as T2 0-1 、T2 1-1 、T2 2-1 、T2 3-1 (ii) a Step 3, placing the wafer I on a preheated ceramic carrying disc; uniformly coating an adhesive on the surface of the wafer I when the temperature of the wafer I reaches the preheating temperature, horizontally placing the wafer II on the surface of the wafer I coated with the adhesive, and completely bonding the wafer I and the wafer II by adopting a gas bag pressurization mode; under the condition of pressurization, cooling the ceramic carrying disc to 25-45 ℃; step 4, rounding the wafer bonded in the step 3 to enable the wafer I and the wafer II to form a concentric circle; step 5, uniformly placing the wandering star wheel with the thickness of 400-1000 microns on a lower disc of a double-sided grinder, and starting the grinder to trim the wandering star wheel; step 6, placing the wafer subjected to the rounding treatment in the step 4 into the planetary wheel trimmed in the step 5, enabling the wafer I to be located above and the wafer II to be located below, starting a double-sided grinder to simultaneously grind the upper surface of the wafer I and the lower surface of the wafer II, setting the grinding time to be 0.5-2 h, and after the grinding is finished, cleaning the ground wafer to remove abrasive materials on the surface of the wafer; step 7, drying the wafer cleaned in the step 6, and then placing the wafer on a heating table, wherein the temperature of the heating table is controlled to be 50-250 ℃, and separating the wafer I from the wafer II; step 8, cleaning the separated wafer I and wafer II,removing the adhesive on the wafer I and the wafer II; and 9, drying the wafers I and II cleaned in the step 8, and measuring the thicknesses of the wafers I and II by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, the measuring points are consistent with the measuring points before adhesion, and the mark of the measuring point of the wafer I is T1 0-2 、T1 1-2 、T1 2-2 、T1 3-2 The measurement point of the wafer II is marked T2 0-2 、T2 1-2 、T2 2-2 、T2 3-2 (ii) a Step 10, calculating the thickness variation before and after grinding of the wafer I by a subtraction method, i.e. by calculating T1 0-1 -T1 0-2 、T1 1-1 -T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 Obtaining the removal amount of three points of the center point of the upper surface and the edge of the upper surface of the wafer in the double-sided grinding process; calculating the amount of thickness change before and after grinding of wafer II by subtraction, i.e. by calculating T2 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 And obtaining the removal amount of the three points of the center point of the lower surface and the edge of the lower surface of the wafer in the double-sided grinding process.
The adhesive in the step 3 is liquid wax or melted solid wax or an EVA film or epoxy resin.
The flatness of the ceramic carrying disc in the step 3 is 1-3 mu m, and the preheating temperature of the ceramic carrying disc is 50-150 ℃.
The method for bonding the wafer I and the wafer II in the step 3 comprises the following steps: and the surfaces A and A of the wafer I and the wafer II are adhered, or the surface B and the surface B are adhered, or the surface A of the wafer I is adhered to the surface B of the wafer II or the surface B of the wafer I is adhered to the surface A of the wafer II.
In the step 5, the thickness of the planetary wheel is determined by the method that the thickness of the planetary wheel is = the thickness of the wafer- (100 μm-300 μm).
And 6, taking the wafer out of the planetary wheel, placing the wafer into a cleaning basket, and placing the basket into an ultrasonic cleaning machine for cleaning.
And 8, the method for cleaning the wafer I and the wafer II comprises the steps of sequentially placing the wafer I and the wafer II into a cleaning flower basket, and placing the flower basket into an ultrasonic cleaning machine to be cleaned by using special cleaning liquid.
The thickness of the wafer I and the wafer II is 300-700 mu m, the TTV is 0-5 mu m, and the Warp is 0-40 mu m.
The materials of the wafer I and the wafer II are silicon carbide or silicon wafers or sapphire or gallium oxide.
The invention has the beneficial effects that: the invention does not need to use expensive and precise detecting instruments and complex calculation, provides double-sided grinding processing of the bonded wafer, the variable quantity of the thickness of the upper bonded wafer represents the removal of the upper disc of the double-sided grinding machine to the wafer, and the variable quantity of the thickness of the lower bonded wafer represents the removal of the lower disc of the double-sided grinding machine to the wafer. In addition, the present invention can be applied to a double-side polishing process as well.
Drawings
FIG. 1 is a schematic view showing the distribution of measurement points on a wafer I according to the present invention;
FIG. 2 is a schematic diagram showing the distribution of the positions of measurement points on a wafer II according to the present invention;
FIG. 3 is a schematic illustration of the waxing of wafers I and II of the present invention;
FIG. 4 is a schematic view of the present invention showing the wafer I and the wafer II completely bonded together;
FIG. 5 is a schematic diagram of concentric circles after the rounding process of wafers I and II according to the present invention;
FIG. 6 is a schematic view showing the distribution of the positions of the measurement points of the wafer I after polishing according to the present invention;
FIG. 7 is a schematic diagram showing the distribution of the positions of the measurement points of the wafer II after polishing according to the present invention.
Detailed Description
The following describes in detail embodiments of the present invention with reference to the drawings, but the embodiments of the present invention are not limited thereto.
Example 1, a method for determining the amount of top and bottom surface removal of a wafer in double side grinding: step 1, selecting a wafer I and a wafer II with the diameter of 160mm, the material of the wafer I and the material of the wafer II, the thickness of 300 +/-1 mu m, the TTV of 1 +/-1 mu m and the Warp of 20 +/-10 mu m.
Step 3, placing the surface A of the silicon wafer I upwards on a ceramic carrying disc with the preheating temperature of 90 ℃; uniformly coating solid wax on the surface A of the wafer I when the temperature of the wafer I of silicon reaches 90 ℃; the silicon wafer II is placed on the surface A of the silicon wafer I with the surface A facing downward, as concentrically as possible, and the measurement points are positioned so as to overlap as much as possible, as shown in FIG. 3, with the center point T1 of the silicon wafer I 0-1 With the center point T2 of the silicon wafer II 0-1 Edge point T1 of a superposed, silicon wafer I 3-1 With the center point T2 of the silicon wafer II 3-1 Overlapping; the silicon wafer i and the silicon wafer ii were completely bonded by air bag pressurization, and the ceramic plate was cooled to 25 ℃ under the pressurization, as shown in fig. 4.
And 4, performing rounding treatment on the bonded silicon wafer I and the bonded silicon wafer II to form a concentric circle with the diameter of phi 150mm completely, as shown in FIG. 5.
And 5, uniformly distributing the wandering star wheel with the thickness of 500 microns into a double-sided grinding machine, starting the double-sided grinding machine to finish the wandering star wheel, setting the finishing time to be 10min, and finishing until the wandering star wheel is flat in surface, consistent in color and free of mottles.
And 6, placing the bonded wafer subjected to the rounding treatment in the step 4 into a planetary wheel, enabling a silicon wafer I to be located above and a silicon wafer II to be located below, starting a double-sided grinding machine to simultaneously grind the upper surface and the lower surface of the wafer subjected to the rounding treatment, setting the grinding time to be 0.5h, taking out the bonded wafer after grinding is finished, placing the bonded wafer into a cleaning basket, placing the basket into an ultrasonic cleaning machine, and ultrasonically cleaning to remove the grinding materials on the surface of the wafer.
And 7, drying the bonded wafer cleaned in the step 6, placing the bonded wafer on a heating table, controlling the temperature of the heating table to be 90 ℃, and separating the silicon wafer I from the silicon wafer II.
And 8, sequentially placing the separated silicon wafer I and the silicon wafer II into a cleaning flower basket, placing the flower basket into an ultrasonic cleaning machine, and carrying out ultrasonic cleaning by adopting a cleaning solution to remove solid wax on the silicon wafer I and the silicon wafer II.
Step 9, drying the silicon wafer I and the silicon wafer II after removing the solid wax in the step 8, measuring the thickness of the wafers by using a non-contact thickness measuring instrument, wherein the measuring points are three points of the central point and the edge of the wafer, the measuring points are as consistent as possible with the measuring points before pasting, taking one of the measuring points as an example, and the measured value of the thickness of the silicon wafer I is marked as T1 0-2 =280.1μm、T1 1-2 =278.2μm、T1 2-2 =276.6μm、T1 3-2 =276.8 μm, and the wafer II thickness measurement of silicon is labeled T2 0-2 =274.5μm、T2 1-2 =278.6μm、T2 2-2 =278.3μm、T2 3-2 =278.8 μm, as shown in fig. 6 and 7.
Step 10, calculating T1 0-1 -T1 0-2 、T1 1-1 - T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 Obtaining the center point and edge of the upper surface of the wafer during the double-side grinding processThe removal amount of three points is respectively 20.1 μm,22.9 μm,23.1 μm and 23.3 μm; calculating T2 by differential subtraction 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 The removal amounts of the three points of the center point and the edge of the lower surface of the wafer in the double-side grinding process were found to be 25.1 μm,22.1 μm,21.9 μm, and 22.0 μm, respectively.
Example 2: step 1, selecting a wafer I and a wafer II which are phi 110mm in diameter and made of silicon carbide, wherein the thickness of the wafer I and the wafer II is 400 +/-1 mu m, the TTV is 3 +/-2 mu m, and the Warp is 30 +/-15 mu m.
Step 3, the surface A of the silicon carbide wafer I is upward, a few drops of daily chemical industry 4016 liquid wax are dripped at the center of the surface A, the wax is uniformly thrown by a wax throwing device, the silicon carbide wafer I is baked for 40s at 230 ℃, and then the silicon carbide wafer I is translated to a ceramic carrying disc at 150 ℃; placing the silicon carbide wafer II with the A facing downwards on the A surface of the silicon carbide wafer I, and placing the silicon carbide wafer II concentrically as far as possible; and completely bonding the silicon carbide wafer I and the silicon carbide wafer II by adopting a gas bag pressurization mode, and cooling the ceramic disc to 45 ℃ under the pressurization condition.
And 4, performing rounding treatment on the bonded silicon carbide wafer I and the bonded silicon carbide wafer II to enable the bonded silicon carbide wafer I and the bonded silicon carbide wafer II to completely form a concentric circle with the diameter of phi 99.8mm.
And 5, uniformly distributing the wandering star wheel with the thickness of 500 microns into a double-sided grinding machine, starting the double-sided grinding machine to finish the wandering star wheel, setting the finishing time to be 10min, and finishing until the wandering star wheel is flat in surface, consistent in color and free of mottles.
And 6, placing the wafer subjected to the rounding treatment in the step 4 into a planetary wheel, starting a double-sided grinder to grind the upper surface and the lower surface of the wafer simultaneously, setting the grinding time to be 120min, taking out the ground attached wafer and placing the attached wafer into a cleaning basket after grinding is finished, placing the cleaning basket into an ultrasonic cleaning machine, and ultrasonically cleaning to remove the abrasive materials on the surface of the wafer.
And 7, drying the bonded wafer cleaned in the step 6, placing the bonded wafer on a heating table, controlling the temperature of the heating table to be 150 ℃, and separating the silicon carbide wafer I from the silicon carbide wafer II.
And 8, sequentially placing the separated silicon carbide wafer I and the silicon carbide wafer II into a cleaning flower basket, placing the flower basket into an ultrasonic cleaning machine, and carrying out ultrasonic cleaning by adopting a wax removing liquid to remove liquid wax on the silicon carbide wafer I and the silicon carbide wafer II.
And 9, measuring the thicknesses of the silicon carbide wafer I and the silicon carbide wafer II after the liquid wax is removed in the step 8 by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, the measuring points are consistent with the measuring points before the wafer is pasted as far as possible, and the measured value of the thickness of the silicon carbide wafer I is marked as T1 0-2 =345.2μm、T1 1-2 =346.3μm、T1 2-2 =346.9μm、T1 3-2 =345.9 μm, wafer II thickness measurement of silicon carbide denoted T2 0-2 =339.4μm、T2 1-2 =344.1μm、T2 2-2 =345μm、T2 3-2 =343.2μm。
Step 10, calculating T1 0-1 -T1 0-2 、T1 1-1 - T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 The removal amounts of three points of the center point and the edge of the upper surface of the silicon carbide wafer in the double-sided grinding process are respectively 54.1 micrometers, 54.2 micrometers, 53.8 micrometers and 54.3 micrometers; calculating T2 by differential subtraction 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 Obtaining the removal component of three points of the center point and the edge of the lower surface of the silicon carbide wafer in the double-sided grinding process61.4 μm,55.2 μm,55.1 μm, 54.9. Mu.m, respectively.
The above method is also applicable to double-side polishing.
Claims (1)
1. A method for determining the amount of removal of the top and bottom surfaces of a wafer during double side grinding, comprising the steps of:
step 1, selecting two wafers I and II with the same size and material;
step 2, the thickness of the wafer I and the thickness of the wafer II are respectively measured by a non-contact thickness gauge, the measuring points are three points of the center point and the edge of the wafer, and the measuring point of the wafer I is marked as T1 0-1 、T1 1-1 、T1 2-1 、T1 3-1 The measuring point of the wafer II is marked as T2 0-1 、T2 1-1 、T2 2-1 、T2 3-1 ；
Step 3, placing the wafer I on a preheated ceramic carrying disc; uniformly coating an adhesive on the surface of the wafer I when the temperature of the wafer I reaches the preheating temperature, horizontally placing the wafer II on the surface of the wafer I coated with the adhesive, and completely bonding the wafer I and the wafer II by adopting a gas bag pressurization mode; under the condition of pressurization, cooling the ceramic carrying disc to 25-45 ℃;
step 4, rounding the wafer bonded in the step 3 to enable the wafer I and the wafer II to form a concentric circle;
step 5, uniformly placing the planetary wheels with the thickness of 400-1000 microns on a lower disc of a double-sided grinder, and starting the grinder to finish the planetary wheels;
step 6, placing the wafer subjected to the rounding treatment in the step 4 into the planetary wheel trimmed in the step 5, enabling the wafer I to be located above and the wafer II to be located below, starting a double-sided grinder to simultaneously grind the upper surface of the wafer I and the lower surface of the wafer II, setting the grinding time to be 0.5-2 h, and after the grinding is finished, cleaning the ground wafer to remove abrasive materials on the surface of the wafer;
step 7, drying the wafer cleaned in the step 6, and then placing the wafer on a heating table, wherein the temperature of the heating table is controlled to be 50-250 ℃, and separating the wafer I from the wafer II;
step 8, cleaning the separated wafer I and wafer II to remove the adhesive on the wafer I and the wafer II;
and 9, drying the wafers I and II cleaned in the step 8, and measuring the thicknesses of the wafers I and II by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, the measuring points are consistent with the measuring points before adhesion, and the mark of the measuring point of the wafer I is T1 0-2 、T1 1-2 、T1 2-2 、T1 3-2 The measurement point of the wafer II is marked T2 0-2 、T2 1-2 、T2 2-2 、T2 3-2 ；
Step 10, calculating the thickness variation before and after grinding of the wafer I by a subtraction method, i.e. by calculating T1 0-1 -T1 0-2 、T1 1-1 -T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 Obtaining the removal amount of three points of the center point of the upper surface of the wafer and the edge of the upper surface of the wafer in the double-sided grinding process; the amount of thickness change before and after grinding of wafer II was calculated by subtraction, i.e., by calculating T2 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 Obtaining the removal amount of three points of the center point of the lower surface and the edge of the lower surface of the wafer in the double-sided grinding process;
the adhesive in the step 3 is an EVA film or epoxy resin;
the flatness of the ceramic carrying disc in the step 3 is 1-3 mu m, and the preheating temperature of the ceramic carrying disc is 50-150 ℃;
the method for bonding the wafer I and the wafer II in the step 3 comprises the following steps: the surface A and the surface A of the wafer I and the wafer II are pasted, or the surface B and the surface B are pasted, or the surface A of the wafer I and the surface B of the wafer II are pasted, or the surface B of the wafer I and the surface A of the wafer II are pasted;
the thickness determination method of the planetary wheel in the step 5 is that the thickness of the planetary wheel = the thickness of a wafer- (100-300 μm);
the method for cleaning the wafer after the grinding in the step 6 comprises the steps of taking the wafer out of the planetary wheel, placing the wafer into a cleaning basket, and placing the basket into an ultrasonic cleaning machine for cleaning;
the method for cleaning the wafer I and the wafer II in the step 8 comprises the steps of sequentially placing the wafer I and the wafer II into a cleaning flower basket, placing the flower basket into an ultrasonic cleaning machine, and cleaning the flower basket by using special cleaning liquid;
the thickness of the wafer I and the wafer II is 300-700 mu m, the TTV is 0-5 mu m, and the Warp is 0-40 mu m;
the materials of the wafer I and the wafer II are silicon carbide or silicon wafers or sapphire or gallium oxide.
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| CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
| CN109290853A (en) * | 2017-07-24 | 2019-02-01 | 蓝思科技（长沙）有限公司 | A kind of preparation method of ultra-thin sapphire sheet |
| CN109585344A (en) * | 2018-12-04 | 2019-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer removal amount consistency control method and device |
| JP2021077819A (en) * | 2019-11-13 | 2021-05-20 | 株式会社ディスコ | Processing method of wafer |
| CN113290426A (en) * | 2021-04-15 | 2021-08-24 | 金华博蓝特电子材料有限公司 | Method for improving polishing thickness uniformity of wafer |
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