CN115302400A - Method for determining removal amount of upper surface and lower surface of wafer in double-sided grinding - Google Patents
Method for determining removal amount of upper surface and lower surface of wafer in double-sided grinding Download PDFInfo
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- CN115302400A CN115302400A CN202211194544.7A CN202211194544A CN115302400A CN 115302400 A CN115302400 A CN 115302400A CN 202211194544 A CN202211194544 A CN 202211194544A CN 115302400 A CN115302400 A CN 115302400A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
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- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention relates to a method for determining the removal amount of the upper surface and the lower surface of a wafer in double-sided grinding, wherein a wafer I and a wafer II are selected; measuring the thicknesses of the wafer I and the wafer II, wherein the measuring points are three points of the center point and the edge of the wafer and are marked; bonding the A surfaces of the wafer I and the wafer II, and rounding the bonded wafers into a concentric circle; starting a double-sided grinder to grind the wafer, and removing the abrasive on the surface of the wafer after grinding; separating the wafer I and the wafer II; cleaning the wafer I and the wafer II to remove the adhesive; measuring the thicknesses of the wafer I and the wafer II, wherein the measuring points are three points of the center point and the edge of the wafer and are marked as well; the measuring point is consistent with the measuring point before pasting, the measuring point mark of the wafer I is used for calculating the thickness variation before and after the same point on the surface of the wafer is ground through a subtraction method, the removal amount of the upper surface, the lower surface and the edge of the wafer in the double-sided grinding process is obtained, and the measuring accuracy is improved.
Description
Technical Field
The invention designs a method for determining the removal amount of the upper surface and the lower surface of a wafer in double-sided grinding, belonging to the field of processing of semiconductor materials.
Background
The double-side grinding process is mainly used for double-side grinding processing of a plane workpiece, and the working principle of double-side grinding is as follows: the upper and lower grinding discs rotate in opposite directions under the driving of the motor, a workpiece is arranged between the upper and lower discs by utilizing the planetary wheel, the planetary wheel is respectively meshed with the inner tooth and the outer gear ring, the inner tooth and the outer gear ring drive the planetary wheel to revolve and rotate, the workpiece is driven by the planetary wheel to perform planetary motion between the upper and lower grinding/polishing discs, pressure is applied to the upper disc through the cylinder, grinding liquid is filled in gaps between the upper and lower discs, and the grinding processing of the upper and lower surfaces of the workpiece can be simultaneously realized under the action of grinding materials. CN113601376A discloses a method for determining the single-side polishing rate in double-side polishing of silicon carbide, in which an edge profiler is used to monitor the changes in the lengths of the silicon side and the carbon side in the polishing process, and a geometric relation is used to calculate the polishing rates of the silicon side and the carbon side, the method depends heavily on the measurement accuracy of the edge profiler, the measurement error is large, and the method is applicable only if the edge of a wafer needs to be chamfered by a T-shaped chamfer; chinese patent CN112846977A discloses a method for reducing flatness error of a double-side grinding workpiece, which adopts a calculation formula of relative motion track between an upper disc or a lower disc and the workpiece to obtain instantaneous relative velocity between the workpiece and a grinding disc, then calculates material removal rate of each point according to Preston's equation, obtains turn-over time by calculating upper and lower surface shape change, and finally realizes convergence of double-side flatness through multiple turn-over.
The curvature and warping degree of the processed workpiece can be directly influenced by the difference of the removal rates of the upper surface and the lower surface of the workpiece, and the determination of the removal rates of the upper surface and the lower surface has guiding significance for adjusting a double-sided grinding process and improving the geometric parameters of a processed wafer; in addition, the workpiece needs to be chamfered before double-side grinding, and the determination of the removal rate of the upper surface and the lower surface has guiding significance on the adjustment of the chamfering process.
Disclosure of Invention
The invention aims at solving the problems that the double-sided grinding process is invisible, the relative speed of each point on the surface of a wafer is complex to calculate, the removal amount of the upper surface and the lower surface of the wafer cannot be accurately measured and the like, and aims to overcome the defects in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: a method of determining the amount of wafer top and bottom surface removal in double side lapping, comprising the steps of: step 1, selecting two wafers I and II with the same size and material; step 2, respectively measuring the thicknesses of the wafer I and the wafer II by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, and the measuring point of the wafer I is marked as T1 0-1 、T1 1-1 、T1 2-1 、T1 3-1 The measuring point of the wafer II is marked as T2 0-1 、T2 1-1 、T2 2-1 、T2 3-1 (ii) a Step 3, placing the wafer I on a preheated ceramic carrying disc; uniformly coating adhesive on the surface of the wafer I when the temperature of the wafer I reaches the preheating temperature, and horizontally placing the wafer II on the surface coated with the adhesiveCompletely bonding the wafer I and the wafer II on the surface of the wafer I in a gas bag pressurization mode; under the condition of pressurization, cooling the ceramic carrying disc to 25-45 ℃; step 4, rounding the wafer bonded in the step 3 to enable the wafer I and the wafer II to form a concentric circle; step 5, uniformly placing the wandering star wheel with the thickness of 400-1000 microns on a lower disc of a double-sided grinder, and starting the grinder to trim the wandering star wheel; step 6, placing the wafer subjected to the rounding treatment in the step 4 into the planetary wheel trimmed in the step 5, enabling the wafer I to be located above and the wafer II to be located below, starting a double-sided grinder to simultaneously grind the upper surface of the wafer I and the lower surface of the wafer II, setting the grinding time to be 0.5-2 h, and after the grinding is finished, cleaning the ground wafer to remove abrasive materials on the surface of the wafer; step 7, drying the wafer cleaned in the step 6, and then placing the wafer on a heating table, wherein the temperature of the heating table is controlled to be 50-250 ℃, and separating the wafer I from the wafer II; step 8, cleaning the separated wafer I and the wafer II, and removing the adhesive on the wafer I and the wafer II; and 9, drying the wafers I and II cleaned in the step 8, and measuring the thicknesses of the wafers I and II by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, the measuring points are consistent with the measuring points before adhesion, and the mark of the measuring point of the wafer I is T1 0-2 、T1 1-2 、T1 2-2 、T1 3-2 The measurement point of the wafer II is marked T2 0-2 、T2 1-2 、T2 2-2 、T2 3-2 (ii) a Step 10, calculating the thickness variation before and after grinding of the wafer I by a subtraction method, i.e. by calculating T1 0-1 -T1 0-2 、T1 1-1 -T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 Obtaining the removal amount of three points of the center point of the upper surface and the edge of the upper surface of the wafer in the double-sided grinding process; calculating the amount of thickness change before and after grinding of wafer II by subtraction, i.e. by calculating T2 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 Obtaining the center point and the edge of the lower surface of the wafer during the double-sided grinding processThree points of removal.
The adhesive in the step 3 is liquid wax or melted solid wax or an EVA film or epoxy resin.
The flatness of the ceramic carrying disc in the step 3 is 1-3 mu m, and the preheating temperature of the ceramic carrying disc is 50-150 ℃.
The method for bonding the wafer I and the wafer II in the step 3 comprises the following steps: and the surfaces A and A of the wafer I and the wafer II are adhered, or the surface B and the surface B are adhered, or the surface A of the wafer I is adhered to the surface B of the wafer II or the surface B of the wafer I is adhered to the surface A of the wafer II.
In the step 5, the thickness of the planetary wheel is determined by the method that the thickness of the planetary wheel is = the thickness of the wafer- (100 μm-300 μm).
And 6, taking the wafer out of the planetary wheel, placing the wafer into a cleaning basket, and placing the basket into an ultrasonic cleaning machine for cleaning.
And 8, the method for cleaning the wafer I and the wafer II comprises the steps of sequentially placing the wafer I and the wafer II into a cleaning flower basket, and placing the flower basket into an ultrasonic cleaning machine to clean the flower basket by using special cleaning liquid.
The thickness of the wafer I and the wafer II is 300-700 mu m, the TTV is 0-5 mu m, and the Warp is 0-40 mu m.
The materials of the wafer I and the wafer II are silicon carbide or silicon wafers or sapphire or gallium oxide.
The invention has the beneficial effects that: the invention does not need to use expensive and precise detection instruments and complex calculation, provides double-sided grinding processing of the bonded wafer, the variable quantity of the thickness of the upper bonded wafer represents the removal of the upper disc of the double-sided grinding machine to the wafer, the variable quantity of the thickness of the lower bonded wafer represents the removal of the lower disc of the double-sided grinding machine to the wafer, and the method can accurately obtain the removal quantity of the upper surface and the lower surface of the wafer in the double-sided grinding process and the removal difference of different areas of the upper surface or the lower surface by simply calculating the variable quantity of the thickness of each position of the upper bonded wafer and the lower bonded wafer, and has great guiding significance for adjusting and optimizing the double-sided grinding process. In addition, the present invention can be applied to a double-side polishing process as well.
Drawings
FIG. 1 is a schematic view showing the distribution of measurement points of a wafer I according to the present invention;
FIG. 2 is a schematic diagram showing the distribution of the positions of measurement points on a wafer II according to the present invention;
FIG. 3 is a schematic illustration of the waxing of wafers I and II of the present invention;
FIG. 4 is a schematic view of the present invention showing the wafer I and the wafer II completely bonded together;
FIG. 5 is a schematic diagram of concentric circles after the rounding process of wafers I and II according to the present invention;
FIG. 6 is a schematic view showing the distribution of the positions of the measurement points of the wafer I after polishing according to the present invention;
FIG. 7 is a schematic diagram showing the distribution of the positions of the measurement points of the wafer II after polishing according to the present invention.
Detailed Description
The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings, but the embodiments of the present invention are not limited thereto.
Example 1, a method of determining the amount of removal of the top and bottom surfaces of a wafer during double side grinding: step 1, selecting a silicon wafer I and a silicon wafer II with the diameter of phi 160mm and the material of silicon, wherein the thickness is 300 +/-1 mu m, the TTV is 1 +/-1 mu m, and the Warp is 20 +/-10 mu m.
Step 3, placing the surface A of the silicon wafer I upwards on a ceramic carrying disc with the preheating temperature of 90 ℃; uniformly coating solid wax on the surface A of the wafer I when the temperature of the wafer I of silicon reaches 90 ℃; the A side of the silicon wafer II is placed on the A side of the silicon wafer I with the A side facing down as much as possible concentrically and the positions of the measurement points should be overlapped as much as possible, as shown in FIG. 3, the center point T1 of the silicon wafer I 0-1 With the center point T2 of the silicon wafer II 0-1 Edge point T1 of a superposed, silicon wafer I 3-1 Center point T2 of silicon wafer II 3-1 Overlapping; the silicon wafer i and the silicon wafer ii were bonded together by air bag pressurization, and the ceramic plate was cooled to 25 ℃ under the pressurization, as shown in fig. 4.
And 4, performing rounding treatment on the bonded silicon wafer I and the bonded silicon wafer II to enable the bonded silicon wafer I and the bonded silicon wafer II to be completely concentric circles with the diameter phi of 150mm, as shown in figure 5.
And 5, uniformly distributing the wandering star wheel with the thickness of 500 microns into a double-sided grinding machine, starting the double-sided grinding machine to finish the wandering star wheel, setting the finishing time to be 10min, and finishing until the wandering star wheel is flat in surface, consistent in color and free of mottles.
And 6, placing the bonded wafer subjected to the rounding treatment in the step 4 into a planetary gear, enabling a silicon wafer I to be located above and a silicon wafer II to be located below, starting a double-sided grinding machine to grind the upper surface and the lower surface of the wafer subjected to the rounding treatment simultaneously, setting the grinding time to be 0.5h, taking out the bonded wafer after grinding is finished, placing the bonded wafer into a cleaning basket, placing the cleaning basket into an ultrasonic cleaning machine, and ultrasonically cleaning to remove abrasive materials on the surface of the wafer.
And 7, drying the bonded wafer cleaned in the step 6, placing the bonded wafer on a heating table, controlling the temperature of the heating table to be 90 ℃, and separating the silicon wafer I from the silicon wafer II.
And 8, sequentially placing the separated silicon wafer I and the silicon wafer II into a cleaning flower basket, placing the flower basket into an ultrasonic cleaning machine, and carrying out ultrasonic cleaning by adopting a cleaning solution to remove solid wax on the silicon wafer I and the silicon wafer II.
And 9, drying the silicon wafer I and the silicon wafer II after the solid wax is removed in the step 8, measuring the thickness of the wafers by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, and the measuring points are consistent with the measuring points before pasting as much as possible, taking one of the measuring points as an example, and the measured value of the thickness of the silicon wafer I is marked as T1 0-2 =280.1μm、T1 1-2 =278.2μm、T1 2-2 =276.6μm、T1 3-2 =276.8 μm, and the wafer II thickness measurement of silicon is labeled T2 0-2 =274.5μm、T2 1-2 =278.6μm、T2 2-2 =278.3μm、T2 3-2 =278.8 μm, as shown in fig. 6, 7.
Step 10, calculating T1 0-1 -T1 0-2 、T1 1-1 - T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 Obtaining the removal amounts of three points of the central point and the edge of the upper surface of the wafer in the double-sided grinding process, wherein the removal amounts are respectively 20.1 mu m,22.9 mu m,23.1 mu m and 23.3 mu m; calculation of T2 by subtraction 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 The removal amounts of the three points of the center point and the edge of the lower surface of the wafer in the double-side grinding process were found to be 25.1 μm,22.1 μm,21.9 μm, and 22.0. Mu.m, respectively.
Example 2: step 1, selecting a wafer I and a wafer II which are phi 110mm in diameter and made of silicon carbide, wherein the thickness of the wafer I and the wafer II is 400 +/-1 mu m, the TTV is 3 +/-2 mu m, and the Warp is 30 +/-15 mu m.
Step 3, the surface A of the silicon carbide wafer I is upward, a few drops of daily chemical industry 4016 liquid wax are dripped at the center of the surface A, the wax is uniformly thrown by a wax throwing device, the silicon carbide wafer I is baked for 40s at 230 ℃, and then the silicon carbide wafer I is translated to a ceramic carrying disc at 150 ℃; placing the silicon carbide wafer II with the A facing downwards on the A surface of the silicon carbide wafer I, and placing the silicon carbide wafer II concentrically as far as possible; and completely bonding the silicon carbide wafer I and the silicon carbide wafer II by adopting a gas bag pressurization mode, and cooling the ceramic disc to 45 ℃ under the pressurization condition.
And 4, performing rounding treatment on the bonded silicon carbide wafer I and the bonded silicon carbide wafer II to enable the bonded silicon carbide wafer I and the bonded silicon carbide wafer II to completely form a concentric circle with the diameter of phi 99.8mm.
And 5, uniformly distributing the wandering star wheel with the thickness of 500 microns into a double-sided grinding machine, starting the double-sided grinding machine to finish the wandering star wheel, setting the finishing time to be 10min, and finishing until the wandering star wheel is flat in surface, consistent in color and free of mottles.
And 6, placing the wafer subjected to the rounding treatment in the step 4 into a planetary wheel, starting a double-sided grinder to grind the upper surface and the lower surface of the wafer simultaneously, setting the grinding time to be 120min, taking out the ground attached wafer and placing the attached wafer into a cleaning basket after grinding is finished, placing the cleaning basket into an ultrasonic cleaning machine, and ultrasonically cleaning to remove the abrasive materials on the surface of the wafer.
And 7, drying the bonded wafer cleaned in the step 6, placing the bonded wafer on a heating table, controlling the temperature of the heating table to be 150 ℃, and separating the silicon carbide wafer I from the silicon carbide wafer II.
And 8, sequentially placing the separated silicon carbide wafer I and the silicon carbide wafer II into a cleaning flower basket, placing the flower basket into an ultrasonic cleaning machine, and carrying out ultrasonic cleaning by adopting a wax removing liquid to remove liquid wax on the silicon carbide wafer I and the silicon carbide wafer II.
And 9, measuring the thickness of the silicon carbide wafer I and the silicon carbide wafer II after the liquid wax is removed in the step 8 by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, and the measuring points are as far as the measuring points before the bondingThe measured thickness of the silicon carbide wafer I, which may remain uniform, is marked T1 0-2 =345.2μm、T1 1-2 =346.3μm、T1 2-2 =346.9μm、T1 3-2 =345.9 μm, wafer II thickness measurement for silicon carbide denoted T2 0-2 =339.4μm、T2 1-2 =344.1μm、T2 2-2 =345μm、T2 3-2 =343.2μm。
Step 10, calculating T1 0-1 -T1 0-2 、T1 1-1 - T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 The removal amounts of three points of the center point and the edge of the upper surface of the silicon carbide wafer in the double-sided grinding process are respectively 54.1 micrometers, 54.2 micrometers, 53.8 micrometers and 54.3 micrometers; calculating T2 by differential subtraction 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 The removal amounts of three points of the center point and the edge of the lower surface of the silicon carbide wafer in the double-sided grinding process are respectively 61.4 μm,55.2 μm,55.1 μm and 54.9 μm.
The above method is also applicable to double-side polishing.
Claims (9)
1. A method for determining the amount of removal of the top and bottom surfaces of a wafer during double side grinding, comprising the steps of:
step 1, selecting two wafers I and II with the same size and material;
step 2, respectively measuring the thicknesses of the wafer I and the wafer II by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, and the measuring point of the wafer I is marked as T1 0-1 、T1 1-1 、T1 2-1 、T1 3-1 The measuring point of the wafer II is marked as T2 0-1 、T2 1-1 、T2 2-1 、T2 3-1 ；
Step 3, placing the wafer I on a preheated ceramic carrying disc; uniformly coating the adhesive on the surface of the wafer I when the temperature of the wafer I reaches the preheating temperature, horizontally placing the wafer II on the surface of the wafer I coated with the adhesive, and completely bonding the wafer I and the wafer II by adopting an air bag pressurization mode; under the condition of pressurization, cooling the ceramic carrying disc to 25-45 ℃;
step 4, rounding the wafer bonded in the step 3 to enable the wafer I and the wafer II to form a concentric circle;
step 5, uniformly placing the wandering star wheel with the thickness of 400-1000 microns on a lower disc of a double-sided grinder, and starting the grinder to trim the wandering star wheel;
step 6, placing the wafer subjected to the rounding treatment in the step 4 into the planetary wheel trimmed in the step 5, enabling the wafer I to be located above and the wafer II to be located below, starting a double-sided grinder to simultaneously grind the upper surface of the wafer I and the lower surface of the wafer II, setting the grinding time to be 0.5-2 h, and after the grinding is finished, cleaning the ground wafer to remove abrasive materials on the surface of the wafer;
step 7, drying the wafer cleaned in the step 6, and then placing the wafer on a heating table, wherein the temperature of the heating table is controlled to be 50-250 ℃, and separating the wafer I from the wafer II;
step 8, cleaning the separated wafer I and the wafer II, and removing the adhesive on the wafer I and the wafer II;
and 9, drying the wafers I and II cleaned in the step 8, and measuring the thicknesses of the wafers I and II by using a non-contact thickness gauge, wherein the measuring points are three points of the center point and the edge of the wafer, the measuring points are consistent with the measuring points before adhesion, and the mark of the measuring point of the wafer I is T1 0-2 、T1 1-2 、T1 2-2 、T1 3-2 The measurement point of the wafer II is marked T2 0-2 、T2 1-2 、T2 2-2 、T2 3-2 ；
Step 10, calculating the thickness variation before and after grinding of the wafer I by a subtraction method, i.e. by calculating T1 0-1 -T1 0-2 、T1 1-1 -T1 1-2 、T1 2-1 - T1 2-2、 T1 3-1 - T1 3-2 Obtaining the removal amount of three points of the center point of the upper surface and the edge of the upper surface of the wafer in the double-sided grinding process; calculating the amount of thickness change before and after grinding of wafer II by subtraction, i.e. by calculating T2 0-1 -T2 0-2 、T2 1-1 - T2 1-2 、T2 2-1 - T2 2-2、 T2 3-1 - T2 3-2 And obtaining the removal amount of three points of the center point of the lower surface and the edge of the lower surface of the wafer in the double-sided grinding process.
2. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: the adhesive in the step 3 is liquid wax or melted solid wax or an EVA film or epoxy resin.
3. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: the flatness of the ceramic carrying disc in the step 3 is 1-3 mu m, and the preheating temperature of the ceramic carrying disc is 50-150 ℃.
4. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: the method for bonding the wafer I and the wafer II in the step 3 comprises the following steps: and the surfaces A and A of the wafer I and the wafer II are adhered, or the surface B and the surface B are adhered, or the surface A of the wafer I is adhered to the surface B of the wafer II or the surface B of the wafer I is adhered to the surface A of the wafer II.
5. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: in the step 5, the thickness of the planetary wheel is determined by the method that the thickness of the planetary wheel is = the thickness of the wafer- (100 μm-300 μm).
6. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: and 6, taking the wafer out of the planetary wheel, placing the wafer into a cleaning basket, and placing the cleaning basket into an ultrasonic cleaning machine for cleaning.
7. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: and 8, the method for cleaning the wafer I and the wafer II comprises the steps of sequentially placing the wafer I and the wafer II into a cleaning flower basket, and placing the flower basket into an ultrasonic cleaning machine to be cleaned by using special cleaning liquid.
8. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: the thickness of the wafers I and II is 300-700 mu m, the TTV is 0-5 mu m, and the Warp is 0-40 mu m.
9. The method of claim 1, wherein the step of determining the amount of removal of the top and bottom surfaces of the wafer during double side grinding comprises: the materials of the wafer I and the wafer II are silicon carbide or silicon wafers or sapphire or gallium oxide.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
| CN109290853A (en) * | 2017-07-24 | 2019-02-01 | 蓝思科技（长沙）有限公司 | A kind of preparation method of ultra-thin sapphire sheet |
| CN109585344A (en) * | 2018-12-04 | 2019-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer removal amount consistency control method and device |
| JP2021077819A (en) * | 2019-11-13 | 2021-05-20 | 株式会社ディスコ | Processing method of wafer |
| CN113290426A (en) * | 2021-04-15 | 2021-08-24 | 金华博蓝特电子材料有限公司 | Method for improving polishing thickness uniformity of wafer |
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2022
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
| CN109290853A (en) * | 2017-07-24 | 2019-02-01 | 蓝思科技（长沙）有限公司 | A kind of preparation method of ultra-thin sapphire sheet |
| CN109585344A (en) * | 2018-12-04 | 2019-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer removal amount consistency control method and device |
| JP2021077819A (en) * | 2019-11-13 | 2021-05-20 | 株式会社ディスコ | Processing method of wafer |
| CN113290426A (en) * | 2021-04-15 | 2021-08-24 | 金华博蓝特电子材料有限公司 | Method for improving polishing thickness uniformity of wafer |
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