CN107984375A - Wafer processing apparatus and its processing method - Google Patents
Wafer processing apparatus and its processing method Download PDFInfo
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- CN107984375A CN107984375A CN201711206394.6A CN201711206394A CN107984375A CN 107984375 A CN107984375 A CN 107984375A CN 201711206394 A CN201711206394 A CN 201711206394A CN 107984375 A CN107984375 A CN 107984375A
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- wafer
- sucker
- face
- grinding wheel
- thickness
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
A kind of wafer processing apparatus and its processing method, wherein, device includes：First sucker of fixed wafer；The first grinding wheel being ground to the wafer of first chuck surface, first grinding wheel include the first abradant surface being ground to wafer；Control the motion control device of the angle between first the first abradant surface of grinding wheel and horizontal plane；Measure the measurer for thickness of wafer thickness.The wafer processing apparatus is simple in structure, and method of work is easy.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of wafer processing apparatus and its processing method.
Background technology
Grinding wafer reduction process is that wafer is ground by grinding wheel, so as to reduce the technology of wafer thickness.
In grinding wafer reduction process, the thickness change of wafer is a very crucial parameter.In order to ensure wafer
Thickness has certain precision, needs to measure the thickness of wafer in grinding wafer reduction process, according to measurement result
Adjusting process parameter is so that wafer thickness is more uniform.Specifically, grinding wafer reduction process is divided into two steps of corase grinding and fine grinding
Suddenly, the total thickness variations of a wafer are currently measured in process of lapping is refined, are adjusted according to the total thickness variations of wafer solid
The sucker angle of wafer is determined, so as to control the thickness change of wafer after the completion of grinding.
However, the structure of existing chemical mechanical polishing device is more complicated, and method of work is more complicated.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of wafer processing apparatus and its processing method, can simplify wafer processing and fill
The structure put, and simplify the method for work of wafer processing apparatus.
To solve the above problems, the present invention provides a kind of wafer processing apparatus, including：First sucker of fixed wafer；It is right
The first grinding wheel that the wafer of first chuck surface is ground, first grinding wheel include grinding wafer
First abradant surface of mill；Control the motion control device of the angle between first the first abradant surface of grinding wheel and horizontal plane；Survey
Measure the measurer for thickness of wafer thickness.
Optionally, first grinding wheel includes the back side opposite with the abradant surface；The motion control device bag
Include：Supporting structure, the supporting structure pass through stud connection, the hinge shaft extending direction and level with first grinding wheel
Face is parallel；First grinding wheel is used to rotate around the hinge shaft extending direction.
Optionally, further include：Turntable, the turntable include supporting surface, and the turntable is used to bypass the supporting surface center
And rotated perpendicular to the straight line of the supporting surface, first sucker is located at the carousel supports face；Positioned at the carousel supports
Second sucker, the 3rd sucker and the 4th sucker in face, first sucker, the second sucker, the 3rd sucker and the 4th sucker surround
The center of the supporting surface is uniformly distributed.
Optionally, the wafer processing apparatus further includes：Second grinding wheel, the first grinding head and the second grinding head；Institute
The first grinding wheel, the second grinding wheel, the first grinding head and the second grinding head is stated to be uniformly distributed around the supporting surface center.
Correspondingly, technical solution of the present invention also provides a kind of wafer processing method, including：Wafer processing apparatus is provided；Carry
For the first wafer, first wafer includes the first opposite process face and first back side；The first of first wafer is set to carry on the back
Face is bonded with first sucker, and the face of first sucker and the first wafer contacts is the first adsorption plane；Make first crystalline substance
After the first round back side is bonded with first sucker, the first process face of first wafer is processed, is subtracted
The step of thickness of small first wafer, the working process, includes：By first grinding wheel to the first process face
The first milled processed is carried out, reduces the thickness of first wafer；After first milled processed, pass through the thickness measure
Device detects the thickness of first wafer, obtains test thickness；According to the test thickness, pass through the motion control device
The angle between first abradant surface and horizontal plane is adjusted, is reduced between first abradant surface and first adsorption plane
Acute angle；After adjusting the angle between first abradant surface and horizontal plane, by the first grinding wheel to described first
Process face carries out the second milled processed, reduces the thickness of first wafer.
Optionally, the step of thickness for detecting first wafer, includes：First crystal circle center and side are detected respectively
The thickness of edge.
Optionally, the step of adjusting the angle between first abradant surface and horizontal plane includes：When first wafer
When the thickness at center is more than the first crystal round fringes thickness, it is less than the distance of the first crystal circle center to first abradant surface
Distance of first crystal round fringes to the first abradant surface；When the thickness of first crystal round fringes is more than first crystal circle center
During thickness, make first crystal round fringes to the first abradant surface distance be less than the first crystal circle center to the first abradant surface away from
From.
Optionally, the wafer processing apparatus further includes：Second grinding wheel, the first grinding head and the second grinding head；Will
First wafer is installed on after the first adsorption plane of first sucker, before first milled processed, is further included：It is logical
Cross second grinding wheel and roughing is carried out to first wafer, reduce the thickness of first wafer, the roughing
Removal amount be more than the working process removal amount；After the roughing, the turntable is rotated, makes first process face
Contacted with first grinding wheel；After second milled processed, further include：The turntable is rotated, is made at described first
Reason face is contacted with first grinding head；Make after first process face contacts with first grinding head, to pass through described
One grinding head carries out the first repair process to first wafer, increases the flatness of first process face；Described first repaiies
After multiple processing, the turntable is rotated, first process face is contacted with second grinding head；Make first process face
After being contacted with second grinding head, the second repair process is carried out to first process face by second grinding head,
Remove the solid particle of the first process face remained on surface.
Optionally, the wafer processing apparatus further includes turntable, and the turntable includes supporting surface, and first sucker is located at
The carousel supports face, the turntable are used to rotate around the supporting surface center and perpendicular to the straight line of the supporting surface；Institute
Wafer processing apparatus is stated to further include：It is fixed on second sucker, the 3rd sucker and the 4th sucker in the carousel supports face；Described
Two suckers include the second adsorption plane, and the 3rd sucker includes the 3rd adsorption plane, and the 4th sucker includes the 4th adsorption plane；Institute
Method of work is stated to further include：The second wafer, the 3rd wafer, the 4th wafer and the 5th wafer are provided, second wafer includes phase
To second processing face and second back side, the 3rd wafer includes the 3rd opposite process face and the 3rd back side, the described 4th
Wafer includes opposite fourth process face and the 4th back side, and the 5th wafer includes the 5th opposite process face and the 5th back of the body
Face；After carrying out roughing to first wafer, before carrying out first milled processed to first wafer, by described in
Second wafer is installed on second adsorption plane of the second sucker, second back side is bonded with the second adsorption plane；To described
During first wafer is processed, roughing is carried out to the second processing face by second grinding wheel；
After the working process, before carrying out the first repair process to the first wafer, the 3rd wafer is installed on the described 3rd
Sucker, makes the 3rd back side be bonded with the 3rd adsorption plane；During the first repair process being carried out to the first wafer-process face,
Roughing is carried out to the 3rd process face of the 3rd wafer by second grinding wheel, and passes through first abrasive sand
Take turns and the second processing face of second wafer is processed；To the first wafer-process face carry out the first repair process it
Afterwards, before carrying out the second repair process to first wafer, the 4th wafer is installed on the 4th sucker, is made described
4th back side is bonded with the 4th adsorption plane；During carrying out the second repair process to first process face, pass through described the
Two grinding wheels carry out roughing to the 4th wafer, and the 3rd wafer is processed by second grinding wheel
Processing, the first repair process is carried out by first grinding head to second wafer；The is carried out to first process face
After two repair processes, first sucker is set to discharge first wafer；First sucker is set to discharge first wafer
Afterwards, the 5th wafer is installed on first sucker, the 5th back side is bonded with first adsorption plane.
Optionally, the step of working process further includes：Described in re-adjustments between the first abradant surface and horizontal plane
The step of the step of angle and second milled processed.
Compared with prior art, technical scheme has the following advantages：
Technical solution of the present invention provide wafer processing apparatus in, the wafer processing apparatus include motion control device and
Measurer for thickness, the motion control device can control the folder between first the first abradant surface of grinding wheel and horizontal plane
Angle, the measurer for thickness are used for the thickness for measuring wafer.The wafer processing apparatus during the work time, can pass through institute
State measurer for thickness to be detected the thickness of wafer, so as to the thickness according to the wafer, filled by motion control
The angle adjusted between the first abradant surface and horizontal plane is put, and then makes first the first abradant surface of grinding wheel parallel to wafer and the
The contact surface of one sucker, makes the thickness of the wafer more uniform.In addition, by first grinding wheel to crystal column surface into
, also only need to be to the angle between the first grinding wheel and horizontal plane when the number of the first sucker is more during row grinding
It is adjusted, so as to be processed to the wafer on multiple first suckers.Therefore the wafer processing apparatus only needs a set of system
Unite to control the angle between crystal column surface and the first abradant surface, so as to simplify the structure of wafer processing apparatus.
In the wafer processing method that technical solution of the present invention provides, the wafer processing apparatus during the work time, can be with
The thickness of wafer is detected by the measurer for thickness, so as to the thickness according to first wafer, is passed through
Motion control device adjusts the angle between the first abradant surface and horizontal plane, and then makes first the first abradant surface of grinding wheel parallel
In first back side of first wafer, make the thickness of first wafer more uniform.When the number of the first sucker is more,
The angle between the first grinding wheel and horizontal plane need to be only adjusted, so as to simplify the processing method of wafer.
Brief description of the drawings
Fig. 1 and Fig. 2 is a kind of structure diagram of wafer processing apparatus；
Fig. 3 to Fig. 5 is the structure diagram of one embodiment of wafer processing apparatus of the present invention；
Fig. 6 to Figure 12 is the structure diagram of each step of one embodiment of wafer processing method of the present invention.
Embodiment
Existing wafer processing apparatus there are problems, such as：Operation is more complicated.
In conjunction with a kind of wafer processing apparatus, analyze it and operate the reason for more complicated：
Fig. 1 and Fig. 2 is a kind of structure diagram of wafer processing apparatus.
Please refer to Fig.1 and Fig. 2, Fig. 2 be region 10 in Fig. 1 profile, region 10 is the top view of Fig. 2 in Fig. 1,
The wafer processing apparatus includes：Turntable 100, the turntable 100 are used for around center of turntable and perpendicular to the disc surfaces
Straight line rotation；Positioned at the first sucker of the disc surfaces, the second sucker, the 3rd sucker and the 4th sucker, the first sucker,
Two suckers, the 3rd sucker and the 4th sucker are respectively used to fixed wafer；First grinding wheel, for carrying out roughing to wafer；
Second grinding wheel is used to finish wafer, and second grinding wheel includes grinding to what the wafer was finished
Flour milling；First grinding head and the second grinding head, are respectively used to repairing to crystal column surface.
Wherein, during being processed by the processing unit (plant) to wafer, first sucker 111, the second sucker
112nd, the 3rd sucker 113 and 114 surface of the 4th sucker are respectively provided with wafer, by rotating the turntable 100, make second grinding
Emery wheel 122 respectively to first sucker 111, the second sucker 112, the 3rd sucker 113 and the wafer on 114 surface of the 4th sucker into
Row finishing.
The wafer includes opposite process face and the back side；The step of finishing, includes：To the wafer-process face
The first finishing is carried out, reduces the thickness of the wafer；After first finishing, the thickness of the wafer is surveyed
Amount, obtains detection thickness；According to the detection thickness, the angle of second sucker 112 and horizontal plane is adjusted, makes wafer rear
It is parallel with first abradant surface；It is right by second grinding wheel 122 after the inclination angle for adjusting second sucker 112
The wafer-process face carries out the second finishing., it is necessary to be inhaled to described first in the course of work of the wafer processing apparatus
Disk 111, the second sucker 112, the 3rd sucker 113 and the wafer on 114 surface of the 4th sucker are finished, and therefore, it is necessary to four sets
Control system controls the first sucker 111, the second sucker 112, the 3rd sucker 113 and 114 surface of the 4th sucker and horizontal plane respectively
Between angle.Therefore, the wafer processing apparatus is complicated, and wafer processing method is more complicated.
To solve the above-mentioned problems, the present invention provides a kind of wafer processing apparatus, including：First sucker of fixed wafer；
The first grinding wheel being ground to the wafer of first chuck surface, first grinding wheel include carrying out wafer
First abradant surface of grinding；Control the motion control device of the angle between first the first abradant surface of grinding wheel and horizontal plane；
Measure the measurer for thickness of wafer thickness.The wafer processing apparatus is simple in structure, and method of work is easy.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
The structure diagram of one embodiment of wafer processing apparatus of Fig. 3 to Fig. 5 present invention.
Please referring to Fig.3 to Fig. 4, Fig. 4 is the profile in region 20 in Fig. 3, and region 20 is the top view of Fig. 4 in Fig. 3,
The wafer processing apparatus includes：First sucker 211 of fixed wafer；The wafer on 211 surface of the first sucker is ground
First grinding wheel 222 of mill, first grinding wheel 222 include the first abradant surface being ground to wafer；Control is ground
The motion control device of angle between the first abradant surface of grinding abrasive disk and horizontal plane；Measure the measurer for thickness of wafer thickness
230。
The wafer processing apparatus includes motion control device and measurer for thickness 230, the motion control device energy
The angle between 222 first abradant surface of the first grinding wheel and horizontal plane is enough controlled, the measurer for thickness 230 is used to measure
The thickness of wafer 201.The wafer processing apparatus during the work time, can be by the measurer for thickness 230 to wafer
Thickness be detected, so as to the thickness according to the wafer, pass through motion control device and adjust the first abradant surface and water
Angle between plane, and then 222 first abradant surface of the first grinding wheel is made parallel to the first sucker and the contact surface of wafer
The wafer thickness is more uniform.In addition, during being ground by first grinding wheel 222 to crystal column surface,
When the number of the first sucker is more, also the angle between the first grinding wheel 222 and horizontal plane need to be only adjusted, therefore
The wafer processing apparatus only needs set of system to control the angle between crystal column surface and the first abradant surface, so as to letter
Change the structure of wafer processing apparatus.
The wafer processing apparatus further includes turntable 200, and the turntable 200 includes supporting surface, 211, first sucker
In 200 supporting surface of turntable, the turntable 200 is used for around the supporting surface center and perpendicular to the straight line of the supporting surface
Rotation；Positioned at the second sucker 212, the 3rd sucker 213 and the 4th sucker 214 of 200 supporting surface of turntable, first sucker
211st, the second sucker 212, the 3rd sucker 213 and the 4th sucker 214 are uniformly distributed around the center of the supporting surface.
First sucker 211 includes the first adsorption plane with wafer contacts；Second sucker 212 includes and the second crystalline substance
Second adsorption planes of the contact of circle 202, the 3rd sucker 213 include the 3rd adsorption plane that is contacted with the 3rd wafer 203, and described the
Four suckers 214 include the 4th adsorption plane contacted with the 4th wafer 204.
First sucker 211 is used for edge perpendicular to the first adsorption plane and crosses the straight line rotation at the first adsorption plane center；Institute
State the second sucker 212 be used for along perpendicular to the second adsorption plane and cross the second adsorption plane center straight line rotate；3rd sucker
213 are used for edge perpendicular to the 3rd adsorption plane and cross the straight line rotation at the 3rd adsorption plane center；4th sucker 214 is used for along vertical
Directly in the straight line rotation at the 4th adsorption plane and the 4th adsorption plane center excessively.
The turntable 200 enables the first grinding wheel 222 to be adsorbed respectively to first sucker 211 first by rotation
Wafer, the wafer and the 4th sucker 214 of the 3rd adsorption plane of the 3rd sucker 213 of the wafer in face, 212 second adsorption plane of the second sucker
The wafer of 4th adsorption plane is ground.
In the present embodiment, work that first grinding wheel 222 is ground the wafer on 211 surface of the first sucker
Skill is finishing, reduces the thickness of wafer；The wafer processing apparatus further includes：Second grinding wheel 221, for wafer into
Row roughing, reduces the thickness of wafer, and the rough machined removal amount is more than the removal amount of finishing；First grinding head 223, is used
In carrying out the first repair process to wafer, increase the flatness of crystal column surface；Second grinding head 224, for carrying out the to wafer
Two repair processes, remove the solid particle of crystal column surface remnants.
First grinding wheel 222 includes the first grinding ring and the first grinding positioned at the described first grinding ring surface applies
Layer；Second grinding wheel 221 includes the second grinding ring and the second abrasive coating positioned at the described second grinding ring surface.
Second grinding wheel 221 includes the second abradant surface, and second abradant surface is used for and wafer contacts；Described
One grinding head 223 includes the 3rd abradant surface, and the 3rd abradant surface is used for and wafer contacts；Second grinding head 224 includes
4th abradant surface, the 4th abradant surface is used for and wafer contacts.
In the present embodiment, the contact surface of first grinding ring and the first abrasive coating is circular ring shape；Second grinding
The contact surface of ring and the second abrasive coating is circular ring shape.
The material of first abrasive coating is diamond, and the material of second abrasive coating is diamond.
First grinding wheel 222 is used to reduce the thickness of the wafer, wafer thickness is reached described in preset value the
One grinding wheel 222 is smaller to the removal amount of wafer, and in order to improve the precision of first grinding wheel 222, described first grinds
The size for grinding diamond particles in coating is smaller.
In order to increase machining accuracy when the first grinding wheel 222 is processed wafer, pass through first abrasive sand
Wheel 222 adjusts 222 first abradant surface of the first grinding wheel and horizontal plane during to grinding wafer, by motion control device
Between angle.
In the present embodiment, the motion control device includes：Supporting structure, the supporting structure and first abrasive sand
Wheel passes through stud connection, and the hinge shaft extending direction is parallel with horizontal plane；First grinding wheel is used to prolong around the hinge shaft
Direction is stretched to rotate.
Second grinding wheel 221 is used to the wafer be thinned, and reduces the thickness of the wafer, and described second
Grinding wheel 221 is larger to the removal amount of wafer, in order to improve work efficiency, diamond particles in second abrasive coating
Size is larger.The size of diamond particles is less than diamond particles in second abrasive coating in first abrasive coating
Size.
Since the size of diamond particles in first abrasive coating is less than diamond in second abrasive coating
The size of grain；In process of lapping, first grinding wheel 222 is less than the second grinding wheel 221 to the removal rate of wafer
To the removal rate of crystal column surface, then the precision of first grinding wheel 222 is higher, and the crystal column surface can be made relatively flat
It is smooth.
During being ground by the first grinding wheel 222 and the second grinding wheel 221 to wafer, unavoidably
The crystal column surface formed cut.
First repair process is used for the cut for reducing the crystal column surface, improves the flatness of crystal column surface；It is described
Second repair process is used to remove the remaining solid particle of the crystal column surface.
During the finishing, roughing and the first repair process, the crystal column surface has lapping liquid, described to grind
Grinding fluid is used to react with wafer, so as to increase the removal rate of wafer material.There is abrasive material in the lapping liquid.
The solid particle includes：Abrasive material in the wafer material and lapping liquid of removal etc..
Second repair process is additionally operable to reduce the cut of the crystal column surface, further improves the smooth of crystal column surface
Degree.
The wafer processing apparatus includes the processing method of same wafer：Inhaled by the second grinding wheel 221 to first
The wafer on 212 surface of disk carries out roughing；After the roughing, the turntable 200 is rotated, wafer is connect with the first abradant surface
Touch；After wafer is contacted with the first grinding wheel 222, crystal column surface is finished by first grinding wheel 222；
After the finishing, the turntable 200 is rotated, wafer is contacted with the first grinding head 223；Wafer and the first grinding head 223
After contact, the first repair process is carried out to the crystal column surface by the first grinding head 223；First repair process it
Afterwards, the turntable 200 is rotated, the wafer is contacted with the second grinding head 224；After wafer is contacted with the second grinding head 224,
Second repair process is carried out to the crystal column surface by the second grinding head 224.
In the finishing passes, the thickness of the wafer can be measured by measurer for thickness 230, root
The angle between 222 first abradant surface of the first grinding wheel and horizontal plane is adjusted according to the thickness of the wafer, so as to reduce wafer
Angle between surface and first adsorption plane, so as to increase the uniformity of the wafer thickness.
First grinding wheel 222, the second grinding wheel 221, the first grinding head 223 and the second grinding head 224 surround
The supporting surface center is uniformly distributed.
In the present embodiment, first grinding wheel 222, the second grinding wheel 221, the first grinding head 223 and second are ground
Bistrique 224 can work at the same time, at the same wafer is finished, roughing, the first repair process and the second repair process, from
And production efficiency can be improved.
Fig. 6 to Figure 12 is the structure diagram of one embodiment of method of work of the wafer processing apparatus of the present invention.
Wafer processing apparatus is provided.
In the present embodiment, the wafer processing apparatus is identical with the wafer processing apparatus shown in Fig. 3 to Fig. 5, does not do herein
Repeat.
It refer to Fig. 6, there is provided the first wafer 201, first wafer 201 include the first opposite process face and first back of the body
Face.
First wafer, 201 processing unit (plant) is used to be processed the first process face of first wafer 201, increases
The flatness of first process face of first wafer 201.
In the present embodiment, the method for work further includes：Second wafer 202, the 3rd wafer 203, the 4th wafer 204 are provided
With the 5th wafer 205 (as shown in figure 12), second wafer 202 includes opposite second processing face and second back side, described
3rd wafer 203 includes the 3rd opposite process face and the 3rd back side, and the 4th wafer 204 includes opposite fourth process face
With the 4th back side, the 5th wafer 205 includes the 5th opposite process face and the 5th back side.
First process face, second processing face, the 3rd process face, fourth process face and the 5th process face are circle；
First back side, second back side, the 3rd back side, the 4th back side and the 5th back side are circle.
The material of first wafer 201 includes silicon, germanium, SiGe or carborundum.The material of second wafer 202 includes
Silicon, germanium, SiGe or carborundum.The material of 3rd wafer 203 includes silicon, germanium, SiGe or carborundum.4th wafer
204 material includes silicon, germanium, SiGe or carborundum.The material of 5th wafer 205 includes silicon, germanium, SiGe or carborundum.
With continued reference to Fig. 6, first back side of first wafer 201 is set to be bonded with first adsorption plane；Make described
After first back side of one wafer 201 is bonded with first adsorption plane, by second grinding wheel 221 to described first
201 first process face of wafer carries out roughing, reduces the thickness of first wafer 201.
The rough machined removal amount is more than the removal amount of following process processing.
In the present embodiment, described the step of making first back side of first wafer 201 be bonded with first adsorption plane
Including：211 first adsorption plane of the first sucker is set to adsorb first wafer 201.
First sucker 211 can adsorb first wafer 201 by vacuum suction or electrostatic adsorption.
The roughing is used to carry out reduction processing to the first wafer 201, reduces the thickness of the first wafer 201.By institute
The removal rate for stating the second grinding wheel 221 is larger, it is possible to increase work efficiency.
The outside diameter of second abradant surface is greater than or equal to the diameter of first wafer 201.
The rough machined step includes：Make the second abradant surface of second grinding wheel 221 and first wafer
201 central contacts, and the EDGE CONTACT of second abradant surface and first wafer 201；Make second grinding wheel 221
Rotated around the second abradant surface center and perpendicular to the straight line of second abradant surface；Drive first sucker 211 described
First wafer 201 is rotated along around the second adsorption plane center and perpendicular to the straight line of second adsorption plane.
Subsequently make after first back side of first wafer 201 is bonded with first adsorption plane, it is brilliant to described first
The step of first process face of circle 201 is processed, the thickness of reduction first wafer 201, the working process is such as
Shown in Fig. 7 to Fig. 9.
Fig. 7 to Fig. 9 is refer to, Fig. 8 is the enlarged drawing in region 21 in Fig. 7, and Fig. 9 is sectional planes of the Fig. 8 along line of cut 1-2
Figure, makes after first back side of first wafer 201 is bonded with first adsorption plane, to pass through first grinding wheel
First process face of 222 pair of first wafer 201 carries out the first milled processed, reduces the thickness of first wafer.
After carrying out roughing to first wafer 201, further included before first milled processed：By described second
Wafer 202 is installed on 212 second adsorption plane of the second sucker, second back side is bonded with the second adsorption plane.
The step of making second back side be bonded with the second adsorption plane, includes：Make 212 second adsorption plane of the second sucker
Adsorb second back side of second wafer 202.
Second sucker 212 adsorbs second wafer 202 by vacuum suction or electrostatic adsorption.
Before carrying out first milled processed, second wafer 202 is installed on second sucker 212 second and is inhaled
After attached face, further include：The turntable 200 is rotated, 201 first process face of the first wafer is connect with first abradant surface
Touch, and second wafer, 202 second processing face is contacted with second abradant surface.In other embodiments, can also incite somebody to action
Second wafer is installed on before second adsorption plane of the second sucker, rotates the turntable, makes first wafer first
Process face is contacted with first abradant surface.
The step of rotating turntable 200 includes：Make the turntable 200 around the supporting surface center and perpendicular to described
The straight line of supporting surface, edge are rotated by 90 ° from second grinding wheel 221 towards the direction of the first grinding wheel 222.
Due to first grinding wheel 222, the second grinding wheel 221, the first grinding head 223 and the second grinding head 224
It is uniformly distributed around the supporting surface center；First sucker 211, the second sucker 212, the 3rd sucker 213 and the 4th sucker
214 are uniformly distributed around the center of the supporting surface.When 201 first process face of the first wafer connects with first abradant surface
When touching, the 202 second processing face of the second wafer is contacted with second abradant surface.
Since the precision of first milled processed is higher, first milled processed is used for the thickness for further reducing wafer
Degree, and increase the precision of the wafer thickness.
The step of first milled processed, includes：Make the first abradant surface of first grinding wheel 222 and described the
One wafer, 201 central contact, and the EDGE CONTACT of first abradant surface and first wafer 201；Make first grinding
Emery wheel 222 rotates around the first abradant surface center and perpendicular to the straight line of first abradant surface；Make 211 band of the first sucker
First wafer 201 is moved to rotate along around the first adsorption plane center and perpendicular to the straight line of first adsorption plane.
During first milled processed, due to the limitation of measurement accuracy, first adsorption plane and described first
Abradant surface is not parallel, so as to be easy to cause after first milled processed, first wafer in uneven thickness, it is necessary to after
It is continuous to be adjusted to stating the angle between 222 first abradant surface of the first grinding wheel and horizontal plane.
With continued reference to Fig. 7 to Fig. 9, after first milled processed, detected by the measurer for thickness 230 described
The thickness of first wafer 201, obtains test thickness；According to the test thickness, by described in motion control device adjusting
Angle between first abradant surface and horizontal plane, the acute angle reduced between first abradant surface and first adsorption plane press from both sides
Angle.
The measurer for thickness includes detecting head, for handling surface launching light to first, and receives from the first processing
The light that face is reflected back, carries out the thickness that analysis obtains first wafer 201；Connecting rod, for connecting the detecting head, and
The detecting head is driven to move in the horizontal plane.
In the present embodiment, the step of thickness for detecting first wafer 201, includes：First wafer is detected respectively
The thickness of 201 center and peripherals.In other embodiments, the thickness at the first wafer other positions can also be measured.
In the present embodiment, the step of adjusting the angle between first abradant surface and horizontal plane, includes：When described first
When the thickness at 201 center of wafer is more than 201 edge thickness of the first wafer, 201 center of the first wafer is set to be ground to first
The distance of flour milling is less than 201 edge of the first wafer to the distance of the first abradant surface；When the thickness at 201 edge of the first wafer is big
When the thickness at 201 center of the first wafer, the distance of 201 edge of the first wafer to the first abradant surface is set to be less than first
Distance of 201 center of wafer to the first abradant surface.
Specifically, the thickness at 201 center of the first wafer is first thickness d1, the thickness at 201 edge of the first wafer
Spend for second thickness d2, the radius of the wafer is r.When the thickness at 201 center of the first wafer is more than first wafer
During 201 edge thickness, first grinding wheel 222 is set to rotate (d around the hinge shaft1-d2)/r radians, and make first crystalline substance
The distance at circle 201 centers to the first abradant surface is less than 201 edge of the first wafer to the distance of the first abradant surface.When the described first crystalline substance
When the thickness at 201 edges of circle is more than the thickness at 201 center of the first wafer, then make first grinding wheel 222 around described
Hinge shaft rotates (d2-d1)/r radians, make the distance of 201 edge of the first wafer to the first abradant surface be less than in the first wafer 201
Distance of the heart to the first abradant surface.
In the present embodiment, during the thickness for detecting first wafer 201, stop to second wafer 202 into
Row grinding, by increasing capacitance it is possible to increase measurement accuracy.In other embodiments, can be right during the thickness for detecting first wafer
First process face carries out the 3rd milled processed.
With continued reference to Fig. 7 to Fig. 9, the angle between 222 first abradant surface of the first grinding wheel and horizontal plane is adjusted
Afterwards, the second milled processed is carried out to the first process face of first wafer 201 by the first grinding wheel 222.
After adjusting the angle between 222 first abradant surface of the first grinding wheel and horizontal plane, first grinding
Depth of parallelism increase between face and the first adsorption plane, after making second milled processed, first wafer 201
Thickness is evenly.
The step of second milled processed, includes：Make the first abradant surface of first grinding wheel 222 and described the
One wafer, 201 central contact, and the EDGE CONTACT of first abradant surface and first wafer 201；Make first grinding
Emery wheel 222 rotates around the first abradant surface center and perpendicular to the straight line of first abradant surface；Make 211 band of the first sucker
First wafer 201 is moved to rotate along around the first adsorption plane center and perpendicular to the straight line of first adsorption plane.
In other embodiments, the method for work further includes：First grinding wheel 222 first described in re-adjustments is ground
The step of angle between face and horizontal plane and second milled processed.Multiple thickness is carried out to first wafer 201
Detection, by increasing capacitance it is possible to increase the uniformity of 201 thickness of the first wafer.
It should be noted that during the working process, further include：By second grinding wheel 221 to institute
State the second wafer 202 and carry out roughing.
Second wafer 202 is carried out by second grinding wheel 221 rough machined step with by described the
Two grinding wheels 221 carry out first wafer 201 that rough machined step is identical, and this will not be repeated here.
Please refer to Fig.1 0, after second milled processed, the 3rd wafer 203 is installed on the 3rd sucker
213 the 3rd adsorption planes, make the 3rd back side be bonded with the 3rd adsorption plane；3rd wafer 203 is installed on the described 3rd
After the 3rd adsorption plane of sucker 213, the first repair process is carried out to the first process face, increases the smooth of first process face
Degree；During the first repair process is carried out to the first process face of the first wafer 201, pass through second grinding wheel
3rd process face of 221 pairs of the 3rd wafers 203 carries out roughing, and by first grinding wheel 222 to described the
The second processing face of two wafers 202 is processed.
The step of 3rd wafer 203 is installed on the 3rd three adsorption plane of sucker 213 includes：Make the described 3rd
Sucker 213 adsorbs the 3rd wafer 203.
First repair process is used to be ground 201 process face of the first wafer, reduces the first process face table
The cut in face.
The step of first repair process, includes：Make the 3rd abradant surface and described first of first grinding head 223
201 central contact of wafer, and the EDGE CONTACT of the 3rd abradant surface and first wafer 201；Make first grinding head
223 rotate around the 3rd abradant surface center and perpendicular to the straight line of the 3rd abradant surface；First sucker 211 is set to drive institute
The first wafer 201 is stated to rotate along around the first adsorption plane center and perpendicular to the straight line of first adsorption plane.
Rough machined step and the to first wafer 201 are carried out to the 3rd process face of the 3rd wafer 203
The rough machined step of one process face progress is identical, and this will not be repeated here.
The step of being processed to the second processing face of second wafer 202 with to first wafer 201
First process face is processed identical, and this will not be repeated here.
1 is please referred to Fig.1, the 3rd process face of the 3rd wafer 203 is carried out by second grinding wheel 221 thick
After processing, the 4th wafer 204 is installed on to the 4th adsorption plane of the 4th sucker 214, make the 4th back side with
4th adsorption plane is bonded；After 4th wafer 204 is installed on the 4th adsorption plane of the 4th sucker 214, to described
First wafer 201 carries out the second repair process, removes the solid particle of the first process face remained on surface；It is brilliant to described first
During circle 201 carries out the second repair process, the 4th wafer 204 is carried out slightly by second grinding wheel 221
Processing, is processed the 3rd wafer 203 by first grinding wheel 222, passes through first grinding head
223 pairs of second wafers 202 carry out the first repair process.
The step of 4th wafer 204 is installed on the 4th four adsorption plane of sucker 214 includes：Make the described 4th
Sucker 214 adsorbs the 4th wafer 204.
Second repair process is used for the solid particle for removing the 201 process face remained on surface of the first wafer.
During the working process, roughing and the first repair process, the crystal column surface has lapping liquid, described
Lapping liquid is used to react with the first wafer 201, so as to increase the removal rate of 201 material of the first wafer.Have in the lapping liquid
There is abrasive material.
The solid particle includes：Abrasive material in 201 material of the first wafer and lapping liquid that remove etc..
The step of second repair process, includes：Make the 4th abradant surface and described first of second grinding head 224
201 central contact of wafer, and the EDGE CONTACT of the 4th abradant surface and first wafer 201；Make second grinding head
224 rotate around the 4th abradant surface center and perpendicular to the straight line of the 4th abradant surface；First sucker 211 is set to drive institute
The first wafer 201 is stated along around the first adsorption plane center, and is rotated perpendicular to the straight line of first adsorption plane.
In the present embodiment, rough machined step is carried out to the 4th wafer 204 and first wafer 201 is carried out slightly
The step of processing, is identical；The step of being processed to the 3rd wafer 203 is with being processed the first wafer 201
The step of it is identical；The step of carrying out the first repair process to second wafer 202 to first wafer 202 with carrying out first
The step of repair process, is identical, and this will not be repeated here.
2 are please referred to Fig.1, after carrying out the second repair process to first wafer 201, releases first sucker 211
Put first wafer 201；Make after first sucker 211 discharges first wafer 201, by the 5th wafer 205
The first adsorption plane of first sucker 211 is installed on, the 5th back side is bonded with the first adsorption plane.
Make after the 5th back side is bonded with the first adsorption plane, to make the 5th wafer 205 repeat the first wafer of processing
201 the step of.
The step of subsequently repeating the roughing, working process, the first repair process and the second repair process.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (10)
- A kind of 1. wafer processing apparatus, it is characterised in that including：First sucker of fixed wafer；The first grinding wheel being ground to the wafer of first chuck surface, first grinding wheel are included to wafer The first abradant surface being ground；Control the motion control device of the angle between first the first abradant surface of grinding wheel and horizontal plane；Measure the measurer for thickness of wafer thickness.
- 2. wafer processing apparatus as claimed in claim 1, it is characterised in that first grinding wheel includes and the grinding The opposite back side in face；The motion control device includes：Supporting structure, the supporting structure pass through with first grinding wheel Stud connection, the hinge shaft extending direction are parallel with horizontal plane；First grinding wheel is used for around the hinge shaft extending direction Rotation.
- 3. wafer processing apparatus as claimed in claim 1, it is characterised in that further include：Turntable, the turntable include support Face, the turntable are used to rotate around the supporting surface center and perpendicular to the straight line of the supporting surface, the first sucker position In the carousel supports face；The second sucker, the 3rd sucker and the 4th sucker positioned at the carousel supports face, described first inhales Disk, the second sucker, the 3rd sucker and the 4th sucker are uniformly distributed around the center of the supporting surface.
- 4. wafer processing apparatus as claimed in claim 3, it is characterised in that the wafer processing apparatus further includes：Second grinding wheel, the first grinding head and the second grinding head；First grinding wheel, the second grinding wheel, the first grinding head and the second grinding head are equal around the supporting surface center Even distribution.
- A kind of 5. wafer processing method, it is characterised in that including：Wafer processing apparatus as described in Claims 1-4 any one is provided；The first wafer is provided, first wafer includes the first opposite process face and first back side；First back side of first wafer is set to be bonded with first sucker, the face of first sucker and the first wafer contacts For the first adsorption plane；Make after first back side of first wafer is bonded with first sucker, to the first process face of first wafer It is processed, reduces the thickness of first wafer, the step of working process includes：First milled processed is carried out to the first process face by first grinding wheel, reduces the thickness of first wafer；After first milled processed, the thickness of first wafer is detected by the measurer for thickness, obtains test Thickness；According to the test thickness, the folder between first abradant surface and horizontal plane is adjusted by the motion control device Angle, reduces the acute angle between first abradant surface and first adsorption plane；After adjusting the angle between first abradant surface and horizontal plane, by the first grinding wheel to first process face The second milled processed is carried out, reduces the thickness of first wafer.
- 6. wafer processing method as claimed in claim 5, it is characterised in that the step of thickness of detection first wafer wraps Include：The thickness at first crystal circle center and edge is detected respectively.
- 7. wafer processing method as claimed in claim 6, it is characterised in that adjust between first abradant surface and horizontal plane Angle the step of include：When the thickness of first crystal circle center is more than the first crystal round fringes thickness, make described The distance of one crystal circle center to the first abradant surface is less than the distance of the first crystal round fringes to the first abradant surface；When first wafer When the thickness at edge is more than the thickness of first crystal circle center, make the distance of the first crystal round fringes to first abradant surface small Distance in the first crystal circle center to the first abradant surface.
- 8. wafer processing method as claimed in claim 5, it is characterised in that the wafer processing apparatus further includes：Second grinding wheel, the first grinding head and the second grinding head；First wafer is installed on after the first adsorption plane of first sucker, before first milled processed, also Including：Roughing is carried out to first wafer by second grinding wheel, reduces the thickness of first wafer, it is described Rough machined removal amount is more than the removal amount of the working process；After the roughing, the turntable is rotated, makes described first Process face is contacted with first grinding wheel；After second milled processed, further include：The turntable is rotated, makes first process face and first grinding head Contact；Make after first process face contacts with first grinding head, it is brilliant to described first by first grinding head Circle carries out the first repair process, increases the flatness of first process face；After first repair process, rotation is described to be turned Disk, makes first process face be contacted with second grinding head；First process face is set to be contacted with second grinding head Afterwards, the second repair process is carried out to first process face by second grinding head, removes the first process face table The remaining solid particle in face.
- 9. wafer processing method as claimed in claim 8, it is characterised in that the wafer processing apparatus further includes turntable, institute Stating turntable includes supporting surface, and first sucker is located at the carousel supports face, and the turntable is used to bypass in the supporting surface The heart and perpendicular to the supporting surface straight line rotate；The wafer processing apparatus further includes：It is fixed on second sucker, the 3rd sucker and the 4th sucker in the carousel supports face； Second sucker includes the second adsorption plane, and the 3rd sucker includes the 3rd adsorption plane, and the 4th sucker includes the 4th and inhales Attached face；The method of work further includes：Second wafer, the 3rd wafer, the 4th wafer and the 5th wafer, second wafer are provided Including opposite second processing face and second back side, the 3rd wafer includes the 3rd opposite process face and the 3rd back side, institute Stating the 4th wafer includes opposite fourth process face and the 4th back side, and the 5th wafer includes the 5th opposite process face and the Five back sides；After carrying out roughing to first wafer, before carrying out first milled processed to first wafer, by institute State the second wafer and be installed on second adsorption plane of the second sucker, second back side is bonded with the second adsorption plane；To institute State during the first wafer is processed, the second processing face is carried out by second grinding wheel slightly plus Work；After the working process, before carrying out the first repair process to the first wafer, the 3rd wafer is installed on described 3rd sucker, makes the 3rd back side be bonded with the 3rd adsorption plane；The mistake of the first repair process is carried out to the first wafer-process face Cheng Zhong, roughing is carried out by second grinding wheel to the 3rd process face of the 3rd wafer, and passes through described first Grinding wheel is processed the second processing face of second wafer；After the first repair process being carried out to the first wafer-process face, before carrying out the second repair process to first wafer, 4th wafer is installed on the 4th sucker, the 4th back side is bonded with the 4th adsorption plane；At described first During reason face carries out the second repair process, roughing is carried out to the 4th wafer by second grinding wheel, is led to Cross second grinding wheel to be processed the 3rd wafer, by first grinding head to second wafer Carry out the first repair process；After carrying out the second repair process to first process face, first sucker is set to discharge first wafer；Make institute After stating the first sucker release first wafer, the 5th wafer is installed on first sucker, makes the 5th back of the body Face is bonded with first adsorption plane.
- 10. wafer processing method as claimed in claim 5, it is characterised in that the step of working process further includes：Repeat The step of the step of adjusting the angle between first abradant surface and horizontal plane and second milled processed.
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| CN109877694A (en) * | 2019-03-04 | 2019-06-14 | 天通日进精密技术有限公司 | Crystal round fringes burnishing device and crystal round fringes polishing method |
| CN110303609A (en) * | 2019-07-12 | 2019-10-08 | 芯盟科技有限公司 | Wafer cuts board and crystal round fringes cutting process |
| CN110394727A (en) * | 2019-07-29 | 2019-11-01 | 武汉新芯集成电路制造有限公司 | A kind of grinding control method and device, milling apparatus of wafer |
| CN110576387A (en) * | 2019-09-30 | 2019-12-17 | 靖江先锋半导体科技有限公司 | surface grinding device for plasma CVD wafer heater |
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| CN114370890A (en) * | 2021-12-31 | 2022-04-19 | 佛山市国星光电股份有限公司 | Sensing device and manufacturing method thereof |
| CN114335301B (en) * | 2021-12-31 | 2024-07-16 | 佛山市国星光电股份有限公司 | Device processing method |
| CN117140236B (en) * | 2023-10-25 | 2024-01-26 | 苏州博宏源机械制造有限公司 | Wafer thickness online measurement device and method |
| CN117140236A (en) * | 2023-10-25 | 2023-12-01 | 苏州博宏源机械制造有限公司 | Wafer thickness online measurement device and method |
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Application publication date: 20180504 |