CN117140236A - Wafer thickness online measurement device and method - Google Patents

Wafer thickness online measurement device and method Download PDF

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Publication number
CN117140236A
CN117140236A CN202311386379.XA CN202311386379A CN117140236A CN 117140236 A CN117140236 A CN 117140236A CN 202311386379 A CN202311386379 A CN 202311386379A CN 117140236 A CN117140236 A CN 117140236A
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CN
China
Prior art keywords
wafer
thickness
water
frame
shaft
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Granted
Application number
CN202311386379.XA
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Chinese (zh)
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CN117140236B (en
Inventor
任明元
刘文平
强彦东
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Suzhou Bohongyuan Equipment Co ltd
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Suzhou Bohongyuan Machinery Manufacturing Co ltd
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Priority to CN202311386379.XA priority Critical patent/CN117140236B/en
Publication of CN117140236A publication Critical patent/CN117140236A/en
Application granted granted Critical
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention discloses an online measuring device for wafer thickness, which comprises: the turntable is rotatably erected through a driving seat, a plurality of preset stations are arranged on the turntable and used for bearing a plurality of processed wafers, and a negative pressure sucker is rotatably arranged on each preset station; the driving rack is erected on one side above the turntable and is provided with a rough grinding mechanism; the locating rack is overhead at one side above the turntable, and a coupling is vertically arranged on the locating rack in a rotating way; the two-shaft driving frames are circumferentially equidistantly arranged, and each two-shaft driving frame is fixed on the shaft coupling; the finish grinding mechanism is arranged on one of the two-axis driving frames and used for carrying out finish machining on the water absorbing disc of the processed wafer, and is rotatably arranged on the other two-axis driving frame; the water dripping mechanism is arranged on the rest of the two-shaft driving frame; a kind of electronic device with high-pressure air-conditioning system; the thickness measuring mechanism is overhead above the turntable and is positioned on one side of the positioning frame.

Description

Wafer thickness online measurement device and method
Technical Field
The invention belongs to the technical field of thickness measuring equipment, and particularly relates to an online wafer thickness measuring device and method.
Background
Chemical mechanical polishing (Chemical-Mechanical Polishing, CMP), also known as Chemical-mechanical planarization (Chemical-Mechanical Planarization, CMP), was originally used to obtain high quality glass surfaces, such as military telescopes. CMP technology is increasingly being used in semiconductor device fabrication, and is currently being used to polish base material silicon wafers in integrated circuits (Integrated Circuit, IC) and ultra large scale integration (Ultra Large Scale Integration, ULSI) circuits, i.e., to planarize wafers or silicon wafers or other substrate materials being processed.
In the polishing process, it is important to know the thickness of a processed wafer in real time, and in a conventional measurement form, there is a contact thickness measurement method in which a measurement probe is brought into contact with the back surface of a wafer as a surface to be processed to measure the thickness, or a non-contact thickness measurement method in which the upper surface of the wafer is irradiated with laser light, reflected light from the back surface of the wafer is received, and the waveform of interference waves is analyzed to measure the thickness.
In the case of measuring the thickness of a wafer by irradiating the wafer to be doped with laser light or the like in a noncontact manner, if the upper surface of the wafer is measured in a completely dry state, the interference intensity of reflected light from the upper surface and the lower surface is weak, and there are also wafers that are difficult to measure. In such a wafer, if a water film having a certain thickness is formed on the upper surface of the wafer, the interference intensity of reflected light from the upper surface and the lower surface is enhanced, and measurement can be performed, and therefore, in addition to the above-described object, measurement may be performed while supplying processing water during grinding.
However, the processing water contains grinding particles and grinding dust generated by processing, and these particles affect interference of light when passing through the laser light, resulting in a decrease in measurement accuracy.
Therefore, it is necessary to provide an apparatus and a method for online measuring the thickness of a wafer, so as to solve the above-mentioned problems in the prior art.
Disclosure of Invention
In order to achieve the above purpose, the present invention provides the following technical solutions: an on-line wafer thickness measuring apparatus, comprising:
the turntable is rotatably erected through a driving seat, a plurality of preset stations are arranged on the turntable and used for bearing a plurality of processed wafers, and a negative pressure sucker is rotatably arranged on each preset station;
the driving rack is erected on one side above the turntable, a rough grinding mechanism is arranged on the driving rack, and the rough grinding mechanism is vertically driven by the driving rack and is contacted with the processing wafer to form rough processing on the processing wafer;
the locating rack is overhead at one side above the turntable, and a coupling is vertically arranged on the locating rack in a rotating way;
the two-shaft driving frames are circumferentially equidistantly arranged, and each two-shaft driving frame is fixed on the shaft coupling;
the finish grinding mechanism is arranged on one of the two-axis driving frames and is used for finish machining the processed wafer;
the water absorbing disc is rotatably arranged on the other two-shaft driving frame, is covered on the processing wafer by flexible cloth and is used for rotationally absorbing water and wiping the processing wafer;
the water dripping mechanism is arranged on the rest of the two-shaft driving frame, can drip a preset amount of purified water after the surface of the processed wafer is dried, and forms a water film with a preset thickness on the processed wafer; and;
the thickness measuring mechanism is overhead above the turntable and is positioned on one side of the positioning frame.
Further, preferably, the drip mechanism includes:
the outer frame is fixed on one side of the two-shaft driving frame;
the shaft disc is rotatably arranged on one side of the lower end face of the outer frame, driving teeth are rotatably arranged on the outer frame, the driving teeth are connected with the shaft disc for transmission through gear meshing, and a water feeding cavity is arranged in the shaft disc;
the center of the pipeline is connected to the shaft disc and is communicated with the water supply cavity;
the plurality of water dripping structures are uniformly arranged and are vertically connected below the shaft disc;
the water film hairbrush is arranged below the shaft disc.
Further, preferably, the dripping structure includes:
the inner tube is arranged in the sealing tube in a sliding manner, and one side of the sealing tube is connected with a rotating tube;
the connecting spring is connected to the inner pipe, and the other end of the connecting spring is connected with the sealing pipe;
the water dripping head is fixed below the sealing pipe, and one end of the rotating pipe is connected with the water dripping head;
the scattering nozzle is fixed below the sealing pipe and sleeved outside the water dripping head, and one end of the inner pipe is connected to the scattering nozzle in a sealing way through the telescopic guide pipe;
the flow blocking shaft is fixed in the sealing pipe, and one end of the flow blocking shaft is extended into the inner pipe in a sliding manner and is used for blocking the end part of the inner pipe;
the outer sleeve member is sleeved on the inner tube, a cutting ring is coaxially arranged in the sealing tube, and the outer sleeve member can be in sealing contact with the cutting ring.
Further, preferably, when the water pressure in the water feeding cavity is higher than 0.02Mpa, the inner pipe can be separated from the choke shaft under the pushing of the water pressure, and the outer sleeve and the cutting ring cut off the flow in the middle of the sealing pipe under the contact.
Further, preferably, a plurality of ultrasonic oscillators are further distributed below the shaft disc, and a rubber layer is installed at the output end of each ultrasonic oscillator.
Further, preferably, the thickness measuring mechanism includes:
the fine tuning rack is fixed with a main body frame below the fine tuning rack, and an optical ranging device is fixed in the middle of the main body frame;
an inner section arranged in the main body frame and positioned right below the optical ranging device, wherein the optical ranging device performs side thickness on a processed wafer through the inner section;
an inner connecting pipe is transversely connected to one side of the main body frame, an inner channel is vertically arranged in the main body frame, the inner connecting pipe is connected with the inner channel connecting cylinder, and the lower end of the inner channel is communicated with the inner section channel;
the sealing pressure plate is coaxially arranged below the main body frame and can be in close contact with a water film on the surface of a processed wafer under the driving of vertical displacement of the main body frame.
Further, preferably, a plurality of channels are distributed in the sealing pressure plate, the channels are communicated with the inner section channels, a flow stopping ring is arranged outside the sealing pressure plate in a rotating mode, a plurality of channel ports are correspondingly formed in the flow stopping ring, and each channel port can be correspondingly communicated with the channel.
Further, preferably, a measuring method of the wafer thickness in-line measuring device includes the steps of:
s1, roughly machining a wafer, namely placing a plurality of wafers on a rotary table through a negative pressure sucker, and transferring the wafers to the position right below a station of a rough grinding mechanism one by one through steering movement of the rotary table;
s2, monitoring and measuring, namely enabling the finish grinding mechanism to be arranged at the thickness measuring mechanism, enabling the thickness measuring mechanism to be suspended above the turntable in a non-contact mode, and carrying out rough thickness measurement on the processed wafer after rough machining one by one, so that the processing thickness of the wafer is gradually close to the process required thickness;
s3, surface treatment, namely, abdying the finish grinding mechanism, covering the processed wafer by a water absorbing disc on the two-shaft driving frame to realize water absorption and removal of polishing solution, enabling the surface of the processed wafer to be in a dry state, dripping a preset amount of purified water by a water dripping mechanism, and plating a layer of water film with a preset thickness on the surface to be measured of the processed wafer;
s4, thickness measurement, namely giving way by the water dripping mechanism, starting the thickness measuring mechanism to measure thickness by optical interference, wherein on one hand, the optical distance measuring device directly transmits a water film to measure the thickness of the multi-point wafer, and on the other hand, a constant-pressure and constant-temperature fluid flow path is formed between the optical distance measuring device and the processed wafer, and the optical distance measuring device transmits the fluid flow path to measure the thickness of the wafer.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention can realize online detection, and can measure thickness without removing the wafer from the polishing table;
2. according to the invention, the influence of particles of working polishing liquid on laser thickness measurement is avoided, so that the thickness of a wafer is measured more accurately;
3. the thickness measuring mechanism adopted in the invention can measure the thickness of the wafer in two thickness measuring modes, namely, the optical distance measuring device directly measures the thickness of the multi-point wafer through a water film, or the optical distance measuring device measures the thickness of the wafer through a constant-pressure constant-temperature fluid flow path, and the fluid pressure and the fluid temperature can be adjusted according to the requirement so as to optimize the measuring condition to the greatest extent.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic view of a driving frame according to the present invention;
FIG. 3 is a schematic view of a drip mechanism according to the present invention;
FIG. 4 is a schematic view of the structure of the center shaft of the present invention;
FIG. 5 is a schematic view of a drip structure according to the present invention;
FIG. 6 is a schematic diagram of a thickness measuring mechanism according to the present invention;
fig. 7 is a schematic view of the structure of the sealing platen in the present invention.
In the figure: 1. a turntable; 2. a drive rack; 21. a rough grinding mechanism; 3. a positioning frame; 31. a biaxial drive rack; 32. a finish grinding mechanism; 33. a water absorbing disc; 4. a drip mechanism; 41. an outer frame; 42. a drive tooth; 43. a shaft disc; 44. a pipeline; 45. an ultrasonic oscillator; 46. a rubber layer; 5. a thickness measuring mechanism; 51. a fine tuning frame; 52. a main body frame; 53. an optical ranging device; 54. an inner section; 55. an inner channel; 56. inscribing a pipeline; 6. a drip structure; 61. sealing the tube; 62. an inner tube; 63. a scattering nozzle; 64. a water drop head; 65. a rotary pipe; 66. an outer sleeve; 7. sealing the pressure plate; 71. a drainage channel; 72. a flow stop ring; 73. the level crossing.
Detailed Description
Referring to fig. 1 and 2, an embodiment of the invention provides an on-line measuring device for thickness of wafer, which comprises a turntable 1, a driving frame 2, a positioning frame 3, a biaxial driving frame 31, a finish grinding mechanism 32, a water absorbing disc 33, a water dripping mechanism 4 and a thickness measuring mechanism 5, wherein the turntable 1 is rotatably erected by a driving seat, a plurality of preset stations are arranged on the turntable 1 and are used for bearing a plurality of processed wafers, a negative pressure sucking disc is rotatably arranged on each preset station, the driving frame 2 is erected on one side above the turntable 1, a rough grinding mechanism 21 is arranged on the driving frame 2, the rough grinding mechanism 21 is vertically driven by the driving frame 2 and is contacted with the processed wafers to form rough machining on the processed wafers, the positioning frame 3 is overhead on one side above the turntable 1, a coupling is vertically rotatably arranged on the positioning frame 3, the two-axis driving frames 31 are three which are circumferentially equidistantly arranged, each two-axis driving frame 31 is fixed on a shaft coupling, a finish grinding mechanism 32 is arranged on one of the two-axis driving frames 31 and used for finish machining a machining wafer, a water absorbing disc 33 is rotatably arranged on the other two-axis driving frame 31, the water absorbing disc 33 is covered on the machining wafer by flexible cloth and used for rotationally absorbing water to wipe the machining wafer, so that polishing liquid on the machining wafer can be absorbed and removed in thickness measurement work, the influence of particles of the polishing liquid on laser thickness measurement is avoided, a water dripping mechanism 4 is arranged on the rest two-axis driving frames 31, and a water dripping mechanism 4 can drip a preset amount of purified water after the surface of the machining wafer is dried and form a water film with a preset thickness on the machining wafer; when the wafer surface is covered with a water film, interference effects can occur when light is reflected between the water film and the wafer surface. The interference effect can improve the sensitivity of measurement, and the laser ranging sensor is more sensitive to the thickness change of the wafer. The thickness measuring mechanism 5 is overhead above the turntable 1 and is positioned on one side of the positioning frame 3.
Referring to fig. 3 and 4, in this embodiment, the water dripping mechanism 4 includes an outer frame 41, a shaft disc 43, a pipeline 44, a water dripping structure 6 and a water film brush, the outer frame 41 is fixed on one side of the two-shaft driving frame 31, the shaft disc 43 is rotatably installed on one side of the lower end face of the outer frame 41, driving teeth 42 are rotatably arranged on the outer frame 41, the driving teeth 42 are connected with the shaft disc 43 through gear engagement for transmission, a water feeding cavity is arranged in the shaft disc 43, the pipeline 44 is centrally connected on the shaft disc 43 and is communicated with the water feeding cavity, the water dripping structure 6 is a plurality of evenly arranged water dripping structures 6, each water dripping structure 6 is vertically connected under the shaft disc 43, the water film brush is arranged under the shaft disc 43, and the water film brush can rotate along with the shaft disc 43 to enable water films on wafers to be in a dripping-shaped dispersed distribution.
Referring to fig. 5, as a preferred embodiment, the drip structure 6 includes a sealing tube 61, a connecting spring, a drip head 64, a scattering nozzle 63, a flow blocking shaft and a jacket 66, wherein an inner tube 62 is slidably disposed in the sealing tube 61, one side of the sealing tube 61 is connected with a rotating tube 65, the connecting spring is connected to the inner tube 62, the other end of the connecting spring is connected to the sealing tube 61, the drip head 64 is fixed below the sealing tube 61, one end of the rotating tube 65 is connected to the drip head 64, the scattering nozzle 63 is fixed below the sealing tube 61 and is sleeved outside the drip head (64), one end of the inner tube 62 is hermetically connected to the scattering nozzle 63 through a telescopic conduit, the flow blocking shaft is fixed in the sealing tube 61, one end of the flow blocking shaft is slidably inserted into the inner tube 62 and seals an end of the inner tube 62, the jacket 66 is sleeved on the inner tube 62, a blocking ring is coaxially disposed in the sealing tube 61, and the jacket 66 can be in sealing contact with the blocking ring.
In this embodiment, when the water pressure in the water feeding cavity is higher than 0.02Mpa, the inner tube 62 can be separated from the choke shaft under the pushing of the water pressure, at this time, the outer sleeve 66 and the choke ring block the middle part of the sealing tube 61 under the contact, that is, when the water pressure in the water feeding cavity is lower than 0.02Mpa, at this time, the sealing tube 61 can directly perform surface water film drip coverage through the drip head 64, and the expansion, uniformity, density, etc. of the liquid drops on the surface of the wafer can be adjusted under the rotation of the cooperation with the shaft disc 43, so that the overall thickness of the liquid drop film can be affected; thereby controlling the rate of addition of droplets, droplet size, and spacing between droplets; on the other hand, when the water pressure in the water feed chamber is higher than 0.02Mpa, the plurality of scattering nozzles 63 can perform pure water diffusion spraying at this time, so that an integral water film is rapidly formed on the surface of the processed wafer.
In this embodiment, a plurality of ultrasonic oscillators 45 are further distributed below the shaft disc 43, and a rubber layer 46 is installed at the output end of the ultrasonic oscillators 45, especially, after the water film is formed, the ultrasonic oscillators 45 provide high-frequency vibration for the processed wafer, so as to ensure that the droplets form a uniform film on the wafer.
Referring to fig. 6, in the present embodiment, the thickness measuring mechanism 5 includes a fine tuning frame 51, an inner section 54, an inner conduit 56 and a sealing platen 7, a main body frame 52 is fixed under the fine tuning frame 51, an optical ranging device 53 is fixed in the middle of the main body frame 52, the inner section 54 is disposed in the main body frame 52 and is located directly under the optical ranging device 53, the optical ranging device 53 performs side thickness measurement on a processed wafer through the inner section 54, the inner conduit 56 is laterally connected to one side of the main body frame 52, an inner channel 55 is vertically disposed in the main body frame 52, the inner conduit 56 is connected with the inner channel 55, the lower end of the inner channel 55 is communicated with the inner section 54, the sealing platen 7 is coaxially disposed under the main body frame 52, the sealing platen 7 can be closely contacted with the processed wafer surface water film under the driving of the main body frame 52, when the processed wafer surface water film is in a drop-shaped dispersion distribution, the sealing platen 7 is suspended above the wafer, the optical ranging device 53 directly performs wafer thickness measurement through the drop-shaped water film, and can perform multi-point thickness measurement under the adjustment; when an integral water film with a larger area is formed on the surface of the processing wafer, the sealing platen 7 is closely contacted with the water film on the surface of the processing wafer, and the inscribed pipeline 56 continuously carries out fluid delivery, so that a fluid flow path is formed between the optical distance measuring device 53 and the processing wafer.
Referring to fig. 7, as a preferred embodiment, a plurality of drain channels 71 are distributed in the sealing platen 7, the drain channels 71 are communicated with the inner intercepting channels 54, a flow stopping ring 72 is rotatably arranged outside the sealing platen 7, a plurality of channel ports 73 are correspondingly arranged on the flow stopping ring 72, each channel port 73 can be correspondingly communicated with the drain channel 71, and in particular, the pressure regulation of a fluid flow path between the optical ranging device 53 and a processing wafer is realized by controlling the staggering angle of the channel ports 73 and the drain channels 71, so that the pressure and the temperature are regulated as required to maximally optimize the measurement conditions, thereby improving the measurement accuracy and repeatability, and effectively inhibiting the influence of external vibration and mechanical interference on the measurement.
In this embodiment, a measurement method of an online wafer thickness measurement device includes the following steps:
s1, rough machining of wafers, namely placing a plurality of wafers on a rotary table 1 through a negative pressure sucker, and transferring the wafers to the position right below a station of a rough grinding mechanism 21 one by one through steering movement of the rotary table 1;
s2, monitoring and measuring, namely enabling the finish grinding mechanism 32 to be arranged at the thickness measuring mechanism 5, enabling the thickness measuring mechanism 5 to be suspended above the turntable 1 in a non-contact mode, and performing rough thickness measurement on the processed wafer after rough machining one by one, so that the processing thickness of the wafer is gradually close to the process required thickness;
s3, surface treatment, namely, giving way by a finish grinding mechanism 32, covering a processed wafer by a water absorbing disc 33 on a biaxial driving frame 31 to realize water absorption and removal of polishing solution, enabling the surface of the processed wafer to be in a dry state, dripping a preset amount of purified water by a water dripping mechanism 4, and plating a layer of water film with a preset thickness on the surface to be measured of the processed wafer;
s4, thickness measurement, the water dripping mechanism 4 gives way, the thickness measuring mechanism 5 starts to perform optical interference thickness measurement, wherein on one hand, the optical distance measuring device 53 directly performs multipoint wafer thickness measurement through a water film to realize thickness measurement universality and representativeness, and on the other hand, a constant-pressure and constant-temperature fluid flow path is formed between the optical distance measuring device 53 and a processing wafer, and the optical distance measuring device 53 performs wafer thickness measurement through the fluid flow path to improve measurement accuracy and repeatability.
The foregoing description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical solution of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.

Claims (8)

1. The utility model provides a wafer thickness on-line measuring device which characterized in that: it comprises the following steps:
the turntable (1) is rotatably erected through a driving seat, a plurality of preset stations are arranged on the turntable (1) and are used for bearing a plurality of processed wafers, and a negative pressure sucker is rotatably arranged on each preset station;
the driving rack (2) is erected on one side above the turntable (1), a rough grinding mechanism (21) is installed on the driving rack (2), and the rough grinding mechanism (21) is vertically driven by the driving rack (2) and is contacted with a processing wafer to form rough processing on the processing wafer;
the positioning frame (3) is overhead at one side above the turntable (1), and a coupling is vertically and rotatably arranged on the positioning frame (3);
the two-shaft driving frames (31) are circumferentially equidistantly arranged, and each two-shaft driving frame (31) is fixed on the shaft coupling;
the finish grinding mechanism (32) is arranged on one of the two-axis driving frames (31) and is used for carrying out finish machining on the processed wafer;
the water absorbing disc (33) is rotatably arranged on the other two-shaft driving frame (31), the water absorbing disc (33) is covered on the processing wafer by flexible cloth, and the processing wafer is rotationally absorbed and wiped;
the water dripping mechanism (4) is arranged on the rest of the biaxial driving frames (31), and the water dripping mechanism (4) can drip a preset amount of purified water after the surface of the processed wafer is dried and form a water film with a preset thickness on the processed wafer; and;
the thickness measuring mechanism (5) is overhead above the turntable (1) and is positioned on one side of the positioning frame (3).
2. The wafer thickness online measurement device according to claim 1, wherein: the drip mechanism (4) comprises:
an outer frame (41) fixed to one side of the biaxial drive frame (31);
the shaft disc (43) is rotatably arranged on one side of the lower end face of the outer frame (41), driving teeth (42) are rotatably arranged on the outer frame (41), the driving teeth (42) are connected with the shaft disc (43) for transmission through gear meshing, and a water feeding cavity is formed in the shaft disc (43);
a pipeline (44) with the center connected to the shaft disc (43) and communicated with the water supply cavity;
the plurality of water dripping structures (6) are uniformly arranged, and each water dripping structure (6) is vertically connected below the shaft disc (43);
the water film hairbrush is arranged below the shaft disc (43).
3. The wafer thickness online measurement device according to claim 2, wherein: the drip structure (6) comprises:
a seal tube (61) in which an inner tube (62) is slidably provided, wherein a rotary tube (65) is connected to one side of the seal tube (61);
the connecting spring is connected to the inner tube (62), and the other end of the connecting spring is connected with the sealing tube (61);
a water dripping head (64) fixed below the sealing pipe (61), wherein one end of the rotating pipe (65) is connected with the water dripping head (64);
the scattering nozzle (63) is fixed below the sealing pipe (61) and sleeved outside the water dropper (64), and one end of the inner pipe (62) is connected to the scattering nozzle (63) in a sealing way through a telescopic pipe;
the flow blocking shaft is fixed in the sealing pipe (61), and one end of the flow blocking shaft is extended into the inner pipe (62) in a sliding manner and seals the end part of the inner pipe (62);
the outer sleeve (66) is sleeved on the inner tube (62), a cutting ring is coaxially arranged in the sealing tube (61), and the outer sleeve (66) can be in sealing contact with the cutting ring.
4. A wafer thickness in-line measuring apparatus according to claim 3, wherein: when the water pressure in the water feeding cavity is higher than 0.02Mpa, the inner pipe (62) can be separated from the choke shaft under the pushing of the water pressure, and the outer sleeve (66) and the cutting ring cut off the middle part of the sealing pipe (61) under the contact.
5. The wafer thickness online measurement device according to claim 2, wherein: a plurality of ultrasonic oscillators (45) are further distributed below the shaft disc (43), and a rubber layer (46) is arranged at the output end of the ultrasonic oscillators (45).
6. The wafer thickness online measurement device according to claim 1, wherein: the thickness measuring mechanism (5) comprises:
a fine tuning frame (51), a main body frame (52) is fixed below the fine tuning frame, and an optical ranging device (53) is fixed in the middle of the main body frame (52);
an inner section (54) arranged in the main body frame (52) and positioned right below the optical ranging device (53), wherein the optical ranging device (53) performs side thickness on a processed wafer through the inner section (54);
an inner connecting pipe (56) is transversely connected to one side of the main body frame (52), an inner channel (55) is vertically arranged in the main body frame (52), the inner connecting pipe (56) is connected with the inner channel (55) through a barrel, and the lower end of the inner channel (55) is communicated with the inner section channel (54);
the sealing pressing plate (7) is coaxially arranged below the main body frame (52), and the sealing pressing plate (7) can be in close contact with a water film on the surface of a processed wafer under the driving of vertical displacement of the main body frame (52).
7. The wafer thickness online measurement device of claim 6, wherein: a plurality of drainage channels (71) are distributed in the sealing pressure plate (7), the drainage channels (71) are communicated with the inner section channels (54), a flow stopping ring (72) is arranged outside the sealing pressure plate (7) in a rotating mode, a plurality of pipeline ports (73) are correspondingly formed in the flow stopping ring (72), and each pipeline port (73) can be correspondingly communicated with the drainage channel (71).
8. An online wafer thickness measuring method, which adopts the online wafer thickness measuring device according to any one of claims 6 to 7, characterized in that: which comprises the following steps:
s1, rough machining of wafers, namely placing a plurality of wafers on a rotary table (1) through negative pressure suckers, and transferring the wafers to the position right below a station of a rough grinding mechanism (21) one by one through steering movement of the rotary table (1);
s2, monitoring and measuring, namely enabling the finish grinding mechanism (32) to be arranged at the thickness measuring mechanism (5), enabling the thickness measuring mechanism (5) to be suspended above the turntable (1) in a non-contact mode, and carrying out rough thickness measurement on the processed wafer after rough machining one by one, so that the processing thickness of the wafer is gradually close to the process required thickness;
s3, surface treatment, namely, giving way by a finish grinding mechanism (32), covering a processed wafer by a water absorbing disc (33) on a biaxial driving frame (31) to realize water absorption and removal of polishing liquid, enabling the surface of the processed wafer to be in a dry state, dripping a preset amount of purified water by a water dripping mechanism (4), and plating a layer of water film with a preset thickness on the surface to be measured of the processed wafer;
s4, thickness measurement, namely, giving way by the water dripping mechanism (4), starting the thickness measuring mechanism (5) to measure thickness by optical interference, wherein on one hand, the optical distance measuring device (53) directly transmits a water film to measure the thickness of the multi-point wafer, on the other hand, a constant-pressure and constant-temperature fluid flow path is formed between the optical distance measuring device (53) and the processed wafer, and the optical distance measuring device (53) transmits the fluid flow path to measure the thickness of the wafer.
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