CN115274639A - Dimming and color mixing integrated COB light source and processing technology thereof - Google Patents

Dimming and color mixing integrated COB light source and processing technology thereof Download PDF

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CN115274639A
CN115274639A CN202210990315.XA CN202210990315A CN115274639A CN 115274639 A CN115274639 A CN 115274639A CN 202210990315 A CN202210990315 A CN 202210990315A CN 115274639 A CN115274639 A CN 115274639A
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die bonding
light source
nanowire
cob light
processing technology
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CN115274639B (en
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林建辉
陈秀莲
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Zhuhai Hongke Optoelectronic Co ltd
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    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
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    • C08K2003/385—Binary compounds of nitrogen with boron
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract

The invention discloses a light and color adjusting integrated COB light source and a processing technology thereof, the scheme is that an aluminum nitride copper-clad substrate is taken as a packaging substrate main body, a die bonding groove is etched on the surface of the packaging substrate main body through a photoetching technology, the packaging substrate is not limited to the aluminum nitride copper-clad substrate during actual processing, an aluminum substrate or other ceramic substrates can be selected, ICP etching or acid etching can be carried out during etching, the shape of an etching interface of the die bonding groove can be V-shaped, rectangular, trapezoidal and the like, all component selections disclosed in the scheme can be replaced and adjusted according to actual processing requirements, and the application only describes a more common scheme. The invention discloses a light and color adjusting integrated COB light source and a processing technology thereof, the technology is simple and reasonable, the component proportion of conductive adhesive is proper, and the heat dissipation efficiency of the prepared COB light source is improved by utilizing the crystal fixing adhesive with excellent heat conduction and electric conduction performance; and the scheme adjusts the arrangement of the chips, so that the light-emitting efficiency of the light source is improved, and the light emission is more uniform.

Description

Dimming and color mixing integrated COB light source and processing technology thereof
Technical Field
The invention relates to the technical field of COB light sources, in particular to a light and color adjusting integrated COB light source and a processing technology thereof.
Background
COB light source is high power integrated area light source, LED chip is directly pasted on high light efficiency integrated area light source technology of mirror surface metal base plate with high light reflection rate, chip on COB process is that firstly, heat conductive epoxy resin is used to cover silicon chip placing point on the surface of base, then silicon chip is directly placed on the surface of base, heat treatment is carried out until the silicon chip is firmly fixed on the base, then, the electric connection is directly established between the silicon chip and the base by using wire welding method. The technology eliminates the concept of a bracket, and has no electroless plating, no reflow soldering and no pasting process, so that the process is reduced by about one third, and the cost is also saved by one third.
When the COB light source is processed in the prior art, the position design of the chip is single, the chips at adjacent positions cannot be staggered effectively, the light emitting of the chips is affected, the heat conducting performance of the COB light source cannot meet practical application, and therefore based on the condition, the application discloses a light and color adjusting integrated COB light source and a processing technology thereof, and the technical problem is solved.
Disclosure of Invention
The invention aims to provide a dimming and toning integrated COB light source and a processing technology thereof, and aims to solve the problems in the background art.
In order to solve the technical problems, the invention provides the following technical scheme:
a processing technology of a dimming and toning integrated COB light source comprises the following steps:
(1) Taking an aluminum nitride copper-clad substrate, shearing the aluminum nitride copper-clad substrate into a specified size, coating photoresist on the surface of the aluminum nitride copper-clad substrate, baking for 12-20 min at 95-100 ℃, exposing and developing to form a die bonding groove pattern, etching according to the die bonding groove pattern to form a die bonding groove, and performing solder welding and drilling on the surface of the copper-clad substrate with the die bonding groove to form a packaging substrate;
(2) Coating die bond adhesive in a die bond groove on a packaging substrate, bonding a chip, standing for 5-8 min, and curing at 140-150 ℃ for 30-40 min;
(3) Connecting the chip and the packaging substrate by using a gold wire to form a circuit path, then enclosing a dam on the surface of the packaging substrate, filling fluorescent glue into the dam, baking and curing, and carrying out performance detection after packaging to obtain a finished product.
According to the optimized scheme, the coating thickness of the die attach adhesive is a, the depth of the die attach groove is b, and the thickness of the chip is c, so that a + c is more than or equal to 0.8b and less than or equal to b.
According to an optimized scheme, the die bonding grooves are arranged in concentric circles, wherein one die bonding groove A is located at the center, a plurality of concentric circles with equal intervals are sequentially arranged outwards by taking the die bonding groove A as the center of circle, and the rest die bonding grooves are uniformly distributed on the plurality of concentric circles at equal intervals.
In an optimized scheme, the distance between the adjacent concentric rings is 1-2 mm.
According to the optimized scheme, when two die bonding grooves are positioned on two adjacent concentric rings and are positioned adjacently, the angle between the two die bonding grooves and the die bonding groove A is 30-45. (ii) a When a concentric ring is arranged between the two die bonding grooves and the positions of the two die bonding grooves are opposite, the two die bonding grooves and the die bonding groove A are positioned on a straight line.
According to an optimized scheme, the preparation steps of the die bond adhesive are as follows: taking epoxy resin, a curing agent, an accelerator, a coupling agent and a diluent, stirring and dispersing for 5-10 min, ultrasonically dispersing for 5-10 min, adding silver modified nanowires and a heat-conducting filler, and grinding for 10-15 min to obtain a solid crystal adhesive;
the contents of all components are as follows: by mass, 90-100 parts of epoxy resin, 12-15 parts of curing agent, 0.5-1 part of accelerator, 1-2 parts of coupling agent, 10-14 parts of diluent, 40-50 parts of silver modified nanowire and 15-20 parts of heat conducting filler.
According to an optimized scheme, in the step (2), the solid crystal glue is positioned in a magnetic field environment when being coated and kept stand, the magnetic field direction is vertical, and the magnetic field intensity is 1-2T.
According to the optimized scheme, the preparation steps of the silver modified nanowire are as follows:
s1: taking polyvinylpyrrolidone and ethylene glycol, stirring and dissolving to obtain polyvinylpyrrolidone solution, wherein the concentration of the polyvinylpyrrolidone solution is 0.4-0.6 mol/L.
Uniformly mixing nickel chloride hexahydrate and ethylene glycol, adding a polyvinylpyrrolidone solution, continuously stirring for 20-30 min, heating to 100-105 ℃, adding hydrazine hydrate, reacting for 30-40 min under heat preservation, performing magnetic separation, and washing with deionized water and absolute ethyl alcohol in sequence to obtain nickel nanowires; the molecular weight of the polyvinylpyrrolidone is 1300000, and the molar ratio of the nickel chloride hexahydrate to the hydrazine hydrate is 1: (3-5); the molar ratio of the polyvinylpyrrolidone to the nickel chloride hexahydrate is 2:3.
s2: taking a nickel nanowire, ultrasonically cleaning the nickel nanowire for 5-10 min by hydrochloric acid (the concentration is 0.1 mol/L), washing the nickel nanowire to be neutral by deionized water, placing the nickel nanowire in an acrylic acid solution, ultrasonically cleaning the nickel nanowire for 10-20 min, and cleaning the nickel nanowire to be neutral by the deionized water for later use; mixing methyl acrylate and the cleaned nickel nanowire, and dissolving the mixture in methanol to obtain a solution B; the concentration of the solution B is 5mol/L.
Taking diethylenetriamine, stirring for 3-6 min in ice-water bath, adding the solution B in nitrogen atmosphere, reacting for 3-4 h at 25-30 ℃, and removing methanol by rotary evaporation to obtain a material C; adding phthalic anhydride into the material C, heating to 140-150 ℃, reacting for 3-4 h, and carrying out magnetic separation to collect a product to obtain a pretreated nanowire; the molar ratio of the diethylenetriamine to the methyl acrylate to the pretreated nanowire is 2:1:1; the mass ratio of the material C to the phthalic anhydride is (2-3): 1.
s3: dissolving the pretreated nanowire and methanol, uniformly stirring to obtain a mixed solution, adding silver acetate into the mixed solution with the concentration of 100g/L, continuously stirring until the silver acetate is dissolved, removing the methanol by reduced pressure distillation, and transferring the mixed solution to a temperature of between 130 and 140 ℃ for thermal reduction for 8 to 12 minutes to obtain the silver modified nanowire. The concentration of the silver acetate is 1M, and the molar ratio of the pretreated nanowire to the silver acetate is 1:5.
according to an optimized scheme, the heat conducting filler is graphene and boron nitride, and the mass ratio of the graphene to the boron nitride is 1:1; the molecular weight of the polyvinylpyrrolidone is 1300000.
According to an optimized scheme, the COB light source is prepared by the processing technology of the dimming and toning integrated COB light source according to any one scheme.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a light and color adjusting integrated COB light source and a processing technology thereof, the scheme is that an aluminum nitride copper-clad substrate is taken as a packaging substrate main body, a die bonding groove is etched on the surface of the packaging substrate main body through a photoetching technology, the packaging substrate is not limited to the aluminum nitride copper-clad substrate during actual processing, an aluminum substrate or other ceramic substrates can be selected, ICP etching or acid etching can be carried out during etching, the shape of an etching interface of the die bonding groove can be V-shaped, rectangular, trapezoidal and the like, all component selections disclosed in the scheme can be replaced and adjusted according to actual processing requirements, and the application only describes a more common scheme.
The main creation points of the scheme are as follows: (1) limiting the position of the die bonding groove; (2) improved regulation of the conductive adhesive.
To creating point (1), because current chip is when arranging, generally all can adopt the syntropy to arrange or arrange according to certain order, the unable effective stagger of the chip of adjacent position, consequently adjacent chip light-emitting can influence each other and absorb, thereby influence the light-emitting efficiency of chip, consequently this scheme is injectd solid brilliant groove position, it is most central to be located with one of them solid brilliant groove A, it is outside in proper order a plurality of equidistant concentric rings to use solid brilliant groove A as the centre of a circle, all the other solid brilliant groove equidistance evenly distributed is on a plurality of concentric rings.
Further limiting on the basis of the scheme, when the other die bonding grooves are arranged, when two die bonding grooves are positioned on the same external ring and the two die bonding grooves are adjacent, the included angle between the two die bonding grooves and the die bonding groove A is 60-90 degrees; when two die bonding grooves are positioned on two adjacent concentric rings and the two die bonding grooves are positioned adjacently (close), the angle between the two die bonding grooves and the die bonding groove A is 30-45 degrees; when a concentric ring is arranged between the two die bonding grooves and the positions of the two die bonding grooves are opposite, the two die bonding grooves and the die bonding groove A are positioned on a straight line; through the design, the positions of the die bonding grooves are staggered, so that the light emitting efficiency of the COB light source can be improved, the light emitting effect is more uniform, and the heat dissipation efficiency can be improved due to the fact that the chips are staggered when the chips work.
Aiming at the creation point (2), in order to improve the heat dissipation efficiency of the COB light source, a heat dissipation assembly is generally arranged on the other side of the COB light source in the prior art, or a heat dissipation layer is added in the processing process of the COB light source, but the heat dissipation assembly is far away from a chip, and the heat dissipation effect cannot meet the requirement; the addition of the heat dissipation layer leads to complex process, high production cost and inconvenient actual production; therefore, the crystal-fixing adhesive is adjusted and improved, the epoxy resin is selected as the main resin, and the main resin is compounded with the curing agent, the accelerator, the coupling agent, the diluent, the silver modified nanowires, the heat-conducting filler and other components, so that the crystal-fixing adhesive with excellent electric conductivity and heat-conducting property is obtained.
The silver modified nanowires are doped in the solid crystal glue, when the nanowires are prepared, polyvinylpyrrolidone is used as a template, nickel salt is deposited to prepare the nickel nanowires, the nickel nanowires have conductivity, the magnetism and the heat conductivity of the nickel nanowires are excellent, and the nickel nanowires can be selected in the scheme, so that the reason is that: the nickel nanowires have excellent magnetism, an external magnetic field can be introduced when the subsequent die bond adhesive is cured, and under the action of the external magnetic field, the nickel nanowires can induce the oriented arrangement to be mutually lapped, so that a lapping network is formed; on the other hand, the lapped nickel nanowires can also realize the formation of a conductive network, so that the conductivity of the solid crystal glue is improved.
The scheme is reminded that polyvinylpyrrolidone with high molecular weight is selected as a coating agent, the obtained nickel nanowire is longer in length and small in diameter, and dense burrs exist on the surface of the nickel nanowire, and the nickel nanowire can form more conductive paths by matching with the subsequent magnetic field action; meanwhile, the structure is convenient for subsequent surface grafting deposition of nano silver. When the conventional low-molecular-weight polyvinylpyrrolidone is adopted, the electric conductivity and the heat conductivity of the product are reduced.
Meanwhile, the scheme introduces components such as diethylenetriamine, phthalic anhydride and the like, the amino-terminated hyperbranched polymer is grafted on the surface of the nickel nanowire, and the amino-terminated hyperbranched polymer is used as a template to be reduced to form nano silver.
The invention discloses a light and color adjusting integrated COB light source and a processing technology thereof, the technology is simple and reasonable, the component proportion of conductive adhesive is proper, and the heat dissipation efficiency of the prepared COB light source is improved by utilizing the crystal fixing adhesive with excellent heat conduction and electric conduction performance; and the scheme adjusts the arrangement of the chips, so that the luminous efficiency of the light source is improved, the light emission is more uniform, and the practicability is higher.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic diagram of the arrangement of the die bonding grooves on the surface of the package substrate according to the present invention.
In the figure: 1-die bonding groove A.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In this example, polyvinylpyrrolidone is available from SIGMA-ALORICH, USA; nickel chloride hexahydrate, acrylic acid and phthalic anhydride are all purchased from national pharmaceutical group chemical reagents, inc.; hydrazine hydrate was purchased from alatin; methyl acrylate and diethylenetriamine are purchased from Shanghai Lingfeng Chemicals Co., ltd; silver acetate was purchased from Shanghai Crystal pure chemical company; the epoxy resin is bisphenol F epoxy resin (NPEF-170) which is purchased from south Asia epoxy resin; the curing agent is triethanolamine and is purchased from chemical reagents of national drug group, inc.; the accelerant is 2-ethyl-4-methylimidazole; the coupling agent is KH-550, available from Allantin; the diluent is 1, 6-hexanediol diglycidyl ether, and is purchased from Shanghai Ziming reagent factories; boron nitride (1 μm) available from fire-retardant materials, inc., cantonero; the graphene is prepared by a Hummers method.
Example 1:
s1: and taking polyvinylpyrrolidone and ethylene glycol, stirring and dissolving to obtain a polyvinylpyrrolidone solution, wherein the concentration of the polyvinylpyrrolidone solution is 0.5mol/L.
Uniformly mixing nickel chloride hexahydrate and ethylene glycol, adding a polyvinylpyrrolidone solution, continuously stirring for 20min, heating to 100 ℃, adding hydrazine hydrate, carrying out heat preservation reaction for 40min, carrying out magnetic separation, and washing with deionized water and absolute ethyl alcohol in sequence to obtain nickel nanowires; the molecular weight of the polyvinylpyrrolidone is 1300000, and the molar ratio of the nickel chloride hexahydrate to the hydrazine hydrate is 1:4; the molar ratio of the polyvinylpyrrolidone to the nickel chloride hexahydrate is 2:3.
s2: taking a nickel nanowire, ultrasonically cleaning the nickel nanowire for 5min by hydrochloric acid (the concentration is 0.1 mol/L), washing the nickel nanowire to be neutral by deionized water, placing the nickel nanowire in an acrylic acid solution, ultrasonically cleaning the nickel nanowire for 10min, and cleaning the nickel nanowire to be neutral by the deionized water for later use; mixing methyl acrylate and the cleaned nickel nanowire, and dissolving the mixture in methanol to obtain a solution B; the concentration of the solution B is 5mol/L.
Stirring diethylenetriamine in an ice water bath for 3min, adding the solution B in a nitrogen atmosphere, reacting for 4h at 25 ℃, and removing methanol by rotary evaporation to obtain a material C; adding phthalic anhydride into the material C, heating to 140 ℃, reacting for 4 hours, carrying out magnetic separation and collecting a product to obtain a pretreated nanowire; the molar ratio of the diethylenetriamine to the methyl acrylate to the pretreated nanowire is 2:1:1; the mass ratio of the material C to phthalic anhydride is 3:1.
s3: dissolving the pretreated nanowire and methanol, uniformly stirring to obtain a mixed solution, adding silver acetate into the mixed solution with the concentration of 100g/L, continuously stirring until the silver acetate is dissolved, distilling under reduced pressure to remove the methanol, and transferring to a temperature of 130 ℃ for thermal reduction for 12min to obtain the silver modified nanowire. The concentration of the silver acetate is 1M, and the molar ratio of the pretreated nanowire to the silver acetate is 1:5.
s4: taking 100 parts by mass of epoxy resin, 15 parts by mass of curing agent, 0.8 part by mass of accelerator, 1.5 parts by mass of coupling agent and 12 parts by mass of diluent, stirring and dispersing for 5min, ultrasonically dispersing for 10min, adding 45 parts by mass of silver modified nanowire and 15 parts by mass of heat-conducting filler, and grinding for 10min to obtain the solid crystal glue. The heat conducting filler is graphene and boron nitride, and the mass ratio of the graphene to the boron nitride is 1:1.
example 2:
s1: and taking polyvinylpyrrolidone and ethylene glycol, stirring and dissolving to obtain a polyvinylpyrrolidone solution, wherein the concentration of the polyvinylpyrrolidone solution is 0.5mol/L.
Uniformly mixing nickel chloride hexahydrate and ethylene glycol, adding a polyvinylpyrrolidone solution, continuously stirring for 25min, heating to 105 ℃, adding hydrazine hydrate, carrying out heat preservation reaction for 35min, carrying out magnetic separation, and washing with deionized water and absolute ethyl alcohol in sequence to obtain nickel nanowires; the molecular weight of the polyvinylpyrrolidone is 1300000, and the molar ratio of the nickel chloride hexahydrate to the hydrazine hydrate is 1:4; the molar ratio of the polyvinylpyrrolidone to the nickel chloride hexahydrate is 2:3.
s2: taking a nickel nanowire, ultrasonically cleaning the nickel nanowire for 8min by hydrochloric acid (the concentration is 0.1 mol/L), washing the nickel nanowire to be neutral by deionized water, placing the nickel nanowire in an acrylic acid solution, ultrasonically cleaning the nickel nanowire for 15min, and cleaning the nickel nanowire to be neutral by the deionized water for later use; mixing methyl acrylate and the cleaned nickel nanowire, and dissolving the mixture in methanol to obtain a solution B; the concentration of the solution B is 5mol/L.
Taking diethylenetriamine, stirring for 6min in an ice water bath, adding the solution B under the nitrogen atmosphere, reacting for 3.5h at 28 ℃, and removing methanol by rotary evaporation to obtain a material C; adding phthalic anhydride into the material C, heating to 145 ℃, reacting for 3.5h, carrying out magnetic separation and collecting a product to obtain a pretreated nanowire; the molar ratio of the diethylenetriamine to the methyl acrylate to the pretreated nanowire is 2: 1; the mass ratio of the material C to phthalic anhydride is 3:1.
s3: dissolving the pretreated nanowire and methanol, uniformly stirring to obtain a mixed solution, adding silver acetate into the mixed solution with the concentration of 100g/L, continuously stirring until the silver acetate is dissolved, carrying out reduced pressure distillation to remove the methanol, and transferring the mixed solution to a temperature of 135 ℃ for thermal reduction for 10min to obtain the silver modified nanowire. The concentration of the silver acetate is 1M, and the molar ratio of the pretreated nanowire to the silver acetate is 1:5.
s4: taking 100 parts by mass of epoxy resin, 15 parts by mass of curing agent, 0.8 part by mass of accelerator, 1.5 parts by mass of coupling agent and 12 parts by mass of diluent, stirring and dispersing for 8min, ultrasonically dispersing for 8min, adding 45 parts by mass of silver modified nanowires and 15 parts by mass of heat-conducting filler, and grinding for 12min to obtain the solid crystal glue. The heat conducting filler is graphene and boron nitride, and the mass ratio of the graphene to the boron nitride is 1:1.
example 3:
s1: and taking polyvinylpyrrolidone and ethylene glycol, stirring and dissolving to obtain a polyvinylpyrrolidone solution, wherein the concentration of the polyvinylpyrrolidone solution is 0.5mol/L.
Uniformly mixing nickel chloride hexahydrate and ethylene glycol, adding a polyvinylpyrrolidone solution, continuously stirring for 30min, heating to 105 ℃, adding hydrazine hydrate, carrying out heat preservation reaction for 30min, carrying out magnetic separation, and washing with deionized water and absolute ethyl alcohol in sequence to obtain nickel nanowires; the molecular weight of the polyvinylpyrrolidone is 1300000, and the molar ratio of the nickel chloride hexahydrate to the hydrazine hydrate is 1:4; the molar ratio of the polyvinylpyrrolidone to the nickel chloride hexahydrate is 2:3.
s2: taking a nickel nanowire, ultrasonically cleaning the nickel nanowire for 10min by hydrochloric acid (the concentration is 0.1 mol/L), washing the nickel nanowire to be neutral by deionized water, placing the nickel nanowire in an acrylic acid solution, ultrasonically cleaning the nickel nanowire for 20min, and cleaning the nickel nanowire to be neutral by the deionized water for later use; mixing methyl acrylate and the cleaned nickel nanowire, and dissolving the mixture in methanol to obtain a solution B; the concentration of the solution B is 5mol/L.
Taking diethylenetriamine, stirring for 6min in ice-water bath, adding the solution B under nitrogen atmosphere, reacting for 3h at 30 ℃, and removing methanol by rotary evaporation to obtain a material C; adding phthalic anhydride into the material C, heating to 150 ℃, reacting for 3h, carrying out magnetic separation and collecting a product to obtain a pretreated nanowire; the molar ratio of the diethylenetriamine to the methyl acrylate to the pretreated nanowire is 2:1:1; the mass ratio of the material C to the phthalic anhydride is 3:1.
S3: dissolving the pretreated nanowire and methanol, uniformly stirring to obtain a mixed solution, adding silver acetate into the mixed solution with the concentration of 100g/L, continuously stirring until the silver acetate is dissolved, distilling under reduced pressure to remove the methanol, and transferring to a temperature of 140 ℃ for thermal reduction for 8min to obtain the silver modified nanowire. The concentration of the silver acetate is 1M, and the molar ratio of the pretreated nanowire to the silver acetate is 1:5.
S4: taking 100 parts by mass of epoxy resin, 15 parts by mass of curing agent, 0.8 part by mass of accelerator, 1.5 parts by mass of coupling agent and 12 parts by mass of diluent, stirring and dispersing for 10min, performing ultrasonic dispersion for 10min, adding 45 parts by mass of silver modified nanowire and 15 parts by mass of heat-conducting filler, and grinding for 15min to obtain the solid crystal glue. The heat conducting filler is graphene and boron nitride, and the mass ratio of the graphene to the boron nitride is 1:1.
Comparative example 1: comparative example 1 in comparison with example 2, in comparative example 1 low molecular weight polyvinylpyrrolidone was used, the molecular weight was 60000 and the process parameters were unchanged for the remaining steps.
Comparative example 2: comparative example 2 is used as a control, and the epoxy resin prepared in comparative example 2 does not introduce an external magnetic field when cured.
Comparative example 3: comparative example 3 comparative example 2 was used as a control, and comparative example 3 incorporated nickel nanowires only in epoxy resin.
S1: and taking polyvinylpyrrolidone and ethylene glycol, stirring and dissolving to obtain a polyvinylpyrrolidone solution, wherein the concentration of the polyvinylpyrrolidone solution is 0.5mol/L.
Uniformly mixing nickel chloride hexahydrate and ethylene glycol, adding a polyvinylpyrrolidone solution, continuously stirring for 25min, heating to 105 ℃, adding hydrazine hydrate, carrying out heat preservation reaction for 35min, carrying out magnetic separation, and washing with deionized water and absolute ethyl alcohol in sequence to obtain nickel nanowires; the molecular weight of the polyvinylpyrrolidone is 1300000, and the molar ratio of the nickel chloride hexahydrate to the hydrazine hydrate is 1:4; the molar ratio of the polyvinylpyrrolidone to the nickel chloride hexahydrate is 2:3.
s2: taking 100 parts by mass of epoxy resin, 15 parts by mass of curing agent, 0.8 part by mass of accelerator, 1.5 parts by mass of coupling agent and 12 parts by mass of diluent, stirring and dispersing for 8min, ultrasonically dispersing for 8min, adding 45 parts by mass of nickel nanowire and 15 parts by mass of heat-conducting filler, and grinding for 12min to obtain the solid crystal glue. The heat conducting filler is graphene and boron nitride, and the mass ratio of the graphene to the boron nitride is 1:1.
Detection experiment 1:
taking the conductive adhesive prepared in the examples 1-3 and the comparative examples 1-3, curing to form an adhesive tape, wherein the size of the adhesive tape is 76.2mm multiplied by 5mm multiplied by 1mm, and the curing conditions are as follows: standing for 8min, and curing at 150 deg.C for 30min; the die bond adhesive is positioned in a magnetic field environment when being coated and placed still, the magnetic field direction is vertical, and the magnetic field intensity is 2T. The conductive adhesive of comparative example 2 is the same as example 2, but no external magnetic field is introduced during curing.
Testing the volume resistivity of the rubber strip sample by using a resistance tester (SB 2230); and (3) detecting the heat conductivity coefficient of the adhesive tape sample by using a heat conductivity tester, wherein the test temperature is 25 ℃, and the specific detection data is as follows:
Figure BDA0003802181770000101
and (4) conclusion: as can be seen from the data in the table above, the conductive adhesive prepared by the method has excellent electric conductivity and heat conductivity.
Example 4: an integrated COB light source was prepared by preparing the conductive paste of example 2.
A processing technology of a dimming and toning integrated COB light source comprises the following steps:
(1) Taking an aluminum nitride copper-clad substrate, cutting the aluminum nitride copper-clad substrate into a specified size, coating photoresist on the surface of the aluminum nitride copper-clad substrate, baking for 15min at 95 ℃, exposing and developing to form a die bonding groove pattern, etching according to the die bonding groove pattern to form a die bonding groove, and performing solder resistance and drilling on the surface of the copper-clad substrate with the die bonding groove to form a package substrate; the die bonding grooves are arranged in concentric circles, wherein one die bonding groove A (marked as 1 in figure 1) is positioned at the center, a plurality of concentric circles with equal intervals are sequentially arranged outwards by taking the die bonding groove A (marked as 1 in figure 1) as the center of a circle, and the rest die bonding grooves are uniformly distributed on the concentric circles with equal intervals.
When the two die bonding grooves are positioned on the two adjacent concentric rings and are positioned adjacently, the angle between the two die bonding grooves and a die bonding groove A (marked as 1 in figure 1) is 30 degrees; when a concentric ring is arranged between the two die bonding grooves and the positions of the two die bonding grooves are opposite, the two die bonding grooves and a die bonding groove A (marked as 1 in figure 1) are positioned on a straight line. The specific arrangement is shown in fig. 1.
(2) Coating die bonding glue in a die bonding groove on a packaging substrate, bonding a chip, standing for 8min, and curing at 150 ℃ for 30min; the coating thickness of the die attach adhesive is a, the die attach groove depth is b, and the chip thickness is c, so that a + c is more than or equal to 0.8b and less than or equal to b. The solid crystal glue is positioned in a magnetic field environment when being coated and kept stand, the magnetic field direction is vertical, and the magnetic field intensity is 2T.
(3) Connecting the chip and the packaging substrate by using a gold wire to form a circuit path, then enclosing a dam on the surface of the packaging substrate, filling fluorescent glue into the dam, baking and curing, and carrying out performance detection after packaging to obtain a finished product.
Example 5: an integrated COB light source was prepared using the conductive paste prepared in example 1.
A processing technology of a dimming and toning integrated COB light source comprises the following steps:
(1) Taking an aluminum nitride copper-clad substrate, shearing the aluminum nitride copper-clad substrate into a specified size, coating photoresist on the surface of the aluminum nitride copper-clad substrate, baking for 20min at 100 ℃, exposing and developing to form a die bonding groove pattern, etching according to the die bonding groove pattern to form a die bonding groove, and performing solder resistance and drilling on the surface of the copper-clad substrate with the die bonding groove to form a packaging substrate; the die bonding grooves are arranged in concentric circles, wherein one die bonding groove A (marked as 1 in figure 1) is positioned at the center, a plurality of concentric circles with equal intervals are sequentially arranged outwards by taking the die bonding groove A (marked as 1 in figure 1) as the center of a circle, and the rest die bonding grooves are uniformly distributed on the concentric circles with equal intervals.
When the two die bonding grooves are positioned on the two adjacent concentric rings and are positioned adjacently, the angle between the two die bonding grooves and a die bonding groove A (marked as 1 in figure 1) is 30 degrees; when a concentric ring is arranged between the two die bonding grooves and the positions of the concentric ring are opposite, the two die bonding grooves and a die bonding groove A (marked as 1 in figure 1) are positioned on a straight line. The specific arrangement is shown in fig. 1.
(2) Coating die bonding glue in a die bonding groove on a packaging substrate, bonding a chip, standing for 8min, and curing at 150 ℃ for 30min; the coating thickness of the die bonding adhesive is a, the depth of the die bonding groove is b, the thickness of the chip is c, and a + c is more than or equal to 0.8b and less than or equal to b. The solid crystal glue is positioned in a magnetic field environment when being coated and kept stand, the magnetic field direction is vertical, and the magnetic field intensity is 2T.
(3) And connecting the chip with the packaging substrate by using a gold wire to form a circuit path, then enclosing a dam on the surface of the packaging substrate, pouring fluorescent glue into the dam, baking for curing, and carrying out performance detection after packaging to obtain a finished product.
Detection experiment 2:
taking the COB light source prepared in the embodiment 4-5, wherein the test chip is a blue-light monochromatic chip, and performing a normal-temperature (25 ℃) thrust test to represent the bonding strength between the solid crystal glue and the chip; and performing an aging test to represent the influence of the heat-conducting property of the die attach adhesive on the chip, detecting the parameter change of the light source after accelerating aging for 168 hours by using 700mA current during the aging test, comparing the luminous flux and voltage with those before the test, and recording the change rate.
Item Thrust kgf Variation of luminous flux Variation of voltage
Example 4 4.8 -0.07％ -0.04％
Example 5 4.7 -0.08％ -0.04％
And (4) conclusion: the invention discloses a light and color adjusting integrated COB light source and a processing technology thereof, the technology is simple and reasonable, the component proportion of conductive adhesive is proper, and the heat dissipation efficiency of the prepared COB light source is improved by utilizing the crystal fixing adhesive with excellent heat conduction and electric conduction performance; and the scheme adjusts the arrangement of the chips, so that the luminous efficiency of the light source is improved, the light emission is more uniform, and the practicability is higher.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The utility model provides a processing technology of integrated COB light source of mixing of colors of adjusting luminance which characterized in that: the method comprises the following steps:
(1) Taking an aluminum nitride copper-clad substrate, shearing the aluminum nitride copper-clad substrate into a specified size, coating photoresist on the surface of the aluminum nitride copper-clad substrate, baking for 12-20 min at 95-100 ℃, exposing and developing to form a die bonding groove pattern, etching according to the die bonding groove pattern to form a die bonding groove, and performing solder welding and drilling on the surface of the copper-clad substrate with the die bonding groove to form a packaging substrate;
(2) Coating die bond adhesive in a die bond groove on a packaging substrate, bonding a chip, standing for 5-8 min, and curing at 140-150 ℃ for 30-40 min;
(3) Connecting the chip and the packaging substrate by using a gold wire to form a circuit path, then enclosing a dam on the surface of the packaging substrate, filling fluorescent glue into the dam, baking and curing, and carrying out performance detection after packaging to obtain a finished product.
2. The processing technology of the dimming and color-adjusting integrated COB light source according to claim 1, characterized in that: the coating thickness of the die attach adhesive is a, the die attach groove depth is b, and the chip thickness is c, so that a + c is more than or equal to 0.8b and less than or equal to b.
3. The processing technology of the dimming and color-adjusting integrated COB light source according to claim 1, characterized in that: the die bonding grooves are arranged in concentric circles, wherein one die bonding groove A (1) is located at the center, a plurality of concentric circles with equal intervals are sequentially arranged outwards by taking the die bonding groove A (1) as the center of a circle, and the rest die bonding grooves are uniformly distributed on the concentric circles with equal intervals.
4. The processing technology of the dimming and color mixing integrated COB light source according to claim 3, characterized in that: the distance between the adjacent concentric rings is 1-2 mm.
5. The processing technology of the dimming and color mixing integrated COB light source according to claim 3, characterized in that: when the two die bonding grooves are positioned on two adjacent concentric rings and are adjacent, the angle between the two die bonding grooves and the die bonding groove A (1) is 30-45 degrees; when a concentric ring is arranged between the two die bonding grooves and the positions of the two die bonding grooves are opposite, the two die bonding grooves and the die bonding groove A (1) are positioned on the same straight line.
6. The processing technology of the dimming and color-adjusting integrated COB light source according to claim 1, characterized in that: the preparation steps of the die attach adhesive are as follows: taking epoxy resin, a curing agent, an accelerator, a coupling agent and a diluent, stirring and dispersing for 5-10 min, ultrasonically dispersing for 5-10 min, adding silver modified nanowires and a heat-conducting filler, and grinding for 10-15 min to obtain a solid crystal adhesive;
the contents of all components are as follows: by mass, 90-100 parts of epoxy resin, 12-15 parts of curing agent, 0.5-1 part of accelerator, 1-2 parts of coupling agent, 10-14 parts of diluent, 40-50 parts of silver modified nanowire and 15-20 parts of heat conducting filler.
7. The processing technology of the dimming and color-adjusting integrated COB light source according to claim 6, characterized in that: in the step (2), the solid crystal glue is positioned in a magnetic field environment when being coated and kept stand, the magnetic field direction is vertical, and the magnetic field intensity is 1-2T.
8. The processing technology of the dimming and color mixing integrated COB light source according to claim 6, characterized in that: the preparation steps of the silver modified nanowire are as follows:
s1: taking polyvinylpyrrolidone and ethylene glycol, and stirring for dissolving to obtain polyvinylpyrrolidone solution; uniformly mixing nickel chloride hexahydrate and ethylene glycol, adding a polyvinylpyrrolidone solution, continuously stirring for 20-30 min, heating to 100-105 ℃, adding hydrazine hydrate, reacting for 30-40 min under heat preservation, performing magnetic separation, and washing with deionized water and absolute ethyl alcohol in sequence to obtain nickel nanowires;
s2: taking a nickel nanowire, ultrasonically cleaning the nickel nanowire for 5-10 min by hydrochloric acid, washing the nickel nanowire to be neutral by deionized water, placing the nickel nanowire in an acrylic acid solution, ultrasonically cleaning the nickel nanowire for 10-20 min, and cleaning the nickel nanowire to be neutral by the deionized water for later use; mixing methyl acrylate and the cleaned nickel nanowire, and dissolving the mixture in methanol to obtain a solution B;
taking diethylenetriamine, stirring for 3-6 min in ice-water bath, adding the solution B in nitrogen atmosphere, reacting for 3-4 h at 25-30 ℃, and removing methanol by rotary evaporation to obtain a material C; adding phthalic anhydride into the material C, heating to 140-150 ℃, reacting for 3-4 h, and carrying out magnetic separation to collect a product to obtain a pretreated nanowire;
s3: dissolving the pretreated nanowire and methanol, adding silver acetate after uniformly stirring, continuously stirring until the silver acetate is dissolved, removing the methanol by reduced pressure distillation, and transferring to the temperature of 130-140 ℃ for thermal reduction for 8-12 min to obtain the silver modified nanowire.
9. The processing technology of the dimming and color-adjusting integrated COB light source according to claim 8, characterized in that: the heat-conducting filler is graphene and boron nitride, and the mass ratio of the graphene to the boron nitride is 1:1; the molecular weight of the polyvinylpyrrolidone is 1300000.
10. COB light source prepared by the processing technology of the dimming and color mixing integrated COB light source according to any one of claims 1-9.
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