CN104576910B - The manufacture method of luminous semiconductor device - Google Patents
The manufacture method of luminous semiconductor device Download PDFInfo
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- CN104576910B CN104576910B CN201510002978.6A CN201510002978A CN104576910B CN 104576910 B CN104576910 B CN 104576910B CN 201510002978 A CN201510002978 A CN 201510002978A CN 104576910 B CN104576910 B CN 104576910B
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- chip
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- carbon nanotube
- supporter
- led chip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention discloses a kind of manufacture method of luminous semiconductor device, it can more rapidly be conducted to improve the heat dissipating state of emitting semiconductor, the heat that chip is sent, reduce chip on and chip perimeter accumulated heat.The manufacture method of the present invention includes：Die bond, multiple LED chips are fixed on supporter, and make LED chip has the one side of two electrodes upward；Once fill, insulation filler is filled between LED chip, form chip layer；Conductive layer is made, conductive carbon nanotube tube layer is grown in chip layer；Graphical treatment, processing is patterned to conductive carbon nanotube tube layer, makes to be electrically connected relation between LED chip；Secondary filling, in the graphical space central filler insulating materials of conductive carbon nanotube, forms conductive carbon nanotube tube layer；Supporter is removed, supporter is removed；Fluorescence coating is made, phosphor powder layer is made above the electrodeless back side of LED chip.
Description
Technical field
The present invention relates to a kind of encapsulation technology of LED component and it is related to LED.
Background technology
The LED encapsulation technologies of prior art be by LED die bonds on aluminium base, fluorescence is then coated around LED chip
Arogel is to realize illumination.It is fluorescent powder colloid, generally epoxy resin or silica gel around the LED of the technology.This kind of organic material
Directly contacted with LED chip, its heat transfer property is poor, the heat that LED chip is sent can not be conducted in time, the temperature of LED chip
Degree is very big with the temperature difference on device on radiator, if the temperature of radiator is at 70 degree, LED chip internal temperature may
Can be more than 110 degree.Such situation causes to work under chip hot soak condition, reduces its life-span and stability.
In existing three-dimensional light source, there is a kind of LED glass, this light source is that circuit line is made on glass, by LED chip
Die bond is on glass.Then two blocks of glass are superimposed together, form three-dimensional light source, it is used to show or lighted.Due to LED core
Piece very little, and need by each LED chip die bond on glass circuit board, therefore the manufacture craft of this LED glass is very multiple
It is miscellaneous, and glass is the non-conductor of heat, LED chip is directly anchored on glass, the heat that LED chip is sent can not be passed in time
Export is gone, and it causes the use environment of LED chip not good, influences its life-span and stability.In order to improve the LED core of LED glass
The heat dissipation environment of piece, in the prior art, has and is first fixed on LED chip on heat sink, then by heat sink welding on glass, then LED
The heat of chip can be conducted preferably, but this mode causes to be clear that heat sink presence on LED glass,
Influence its attractive in appearance.In addition, heat sink generally metal, it has heavy burden, and it is not easy to be fixed on glass circuit board, if
Fixed using elargol, then the thermal resistance and resistance of elargol bearing are all very big, this may cause the overall heat increase of glass.It is this
Improvement behavior, as a result of heat sink, can produce material cost.
The content of the invention
First technical problem to be solved by this invention is to provide a kind of light emitting semiconductor device for improving and radiating, and is used to
Improve the heat dissipating state of emitting semiconductor, the heat that chip is sent can be conducted more rapidly, reduce on chip and core
The accumulated heat on piece periphery.
Second technical problem to be solved by this invention is to provide a kind of three-dimensional LED/light source, is partly led to improve to light
The heat dissipating state of body, the heat that chip is sent can be conducted more rapidly, reduce chip on and chip perimeter accumulated heat.
3rd technical problem to be solved by this invention is to provide a kind of manufacture method of luminous semiconductor device, is used to
Improve the heat dissipating state of emitting semiconductor, the heat that chip is sent can be conducted more rapidly, reduce on chip and core
The accumulated heat on piece periphery.
To solve above-mentioned first technical problem, the technical solution adopted in the present invention is as follows：
It is a kind of to improve the light emitting semiconductor device of radiating, including at least two LED chips；Two electrodes of LED chip exist
The same face；And
Having in the LED chip above the one side of electrode has patterned conductive carbon nanotube tube layer, and the conductive carbon is received
Mitron layer is used as the wire being electrically connected between two LED chips；
There is phosphor powder layer above the electrodeless back side of LED chip.
Preferably：Insulating carbon nanotubes material is filled between the graphical space of the conductive carbon nanotube.
Preferably：Insulation filler is filled between LED chip.
Preferably：The insulation filler is titanium oxide or silica.
Preferably：Connect and/or be connected in parallel by conductive carbon nanotube between LED chip.
To solve above-mentioned second technical problem, the technical solution adopted in the present invention is as follows：
A kind of three-dimensional LED/light source, including circuit board, are provided with described light emitting semiconductor device on the circuit board.
Preferably：The circuit board is the transparent material for being disposed with wire thereon.
Preferably：There is metal charge in the conductive carbon nanotube.There is cavity in CNT, gold is filled in the cavities
Category, such as silver-colored, it can improve the electric conductivity and thermal conductivity of CNT.
To solve above-mentioned 3rd technical problem, the technical solution adopted in the present invention is as follows：
A kind of manufacture method of luminous semiconductor device, including：
Die bond, multiple LED chips are fixed on supporter, and make LED chip has the one side of two electrodes upward；
Once fill, insulation filler is filled between LED chip, form chip layer；
Conductive layer is made, conductive carbon nanotube tube layer is grown in chip layer；
Graphical treatment, processing is patterned to conductive carbon nanotube tube layer, makes to be electrically connected pass between LED chip
System；
Secondary filling, in the graphical space central filler insulating materials of conductive carbon nanotube, forms conductive carbon nanotube
Layer；
Supporter is removed, supporter is removed；
Fluorescence coating is made, phosphor powder layer is made above the electrodeless back side of LED chip.
Preferably：The supporter is silica, silicon, sapphire, carborundum, ceramics, resin and/or the material containing metal
Material.
Preferably：The insulation filler once filled is titanium oxide, and titanium oxide is filled in LED core by sputtering mode
Space between piece.
Preferably：The insulant of the secondary filling is insulating carbon nanotubes.The CNT of insulation has good lead
Hot, the collocation of itself and conductive CNT is used, and radiating effect is more stablized and uniformity.
Preferably：The supporter is blue film, and in the step of removing supporter, blue film is peeled off into removal from chip layer.
Compared with prior art, the beneficial effects of the invention are as follows：
The good thermal conductivity of present invention application conductive carbon nanotube, as wire between LED chip.Compare
The mode of prior art weld lead, conductive carbon nanotube of the invention is the electrode that the modes such as growth, sputtering are attached to chip
On.The way of contact of this electrode and wire, its resistance and the equal very little of thermal resistance, and conductive carbon nanotube is as between chip
Connection in series-parallel wire, it can be with the more efficient heat derives by chip internal, and the accumulated heat of chip surface, which can be swiftly passed through, to be led
Electrical carbon nanotube layer is dispersed into surrounding environment.
Brief description of the drawings
Fig. 1 is the die bond step schematic diagram of one embodiment of the invention；
Fig. 2 is the schematic diagram of a filling step；
Fig. 3 is the schematic diagram for making conductive layer；
Fig. 4 is the schematic diagram of patterned conductive layer step；
Fig. 5 is the schematic diagram of secondary filling step；
Fig. 6 is the schematic diagram of supporter step；
Fig. 7 is the schematic diagram for making fluorescence coating step；
Fig. 8 is a kind of structural representation of LED chip；
Fig. 9 is Fig. 7 structural representation for looking up angle.
Brief description of the drawings：
1st, LED chip；2nd, supporter；3rd, insulation filler；4th, conductive carbon nanotube；5th, space；6th, insulating carbon nanotubes；
7th, phosphor powder layer；8th, Sapphire Substrate；9th, electrode.
Embodiment
The present invention proposes a kind of light emitting semiconductor device for improving and radiating, including at least two LED chips；LED chip
Two electrodes are in the same face；Having in LED chip above the one side of electrode has patterned conductive carbon nanotube tube layer, and conductive carbon is received
Mitron layer is used as the wire being electrically connected between two LED chips；There is fluorescent material above the electrodeless back side of LED chip
Layer.The present invention also proposes a kind of three-dimensional LED/light source for applying above-mentioned luminescent device.
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
The light emitting semiconductor device schematic diagram of fabrication technology that Fig. 1 to 7 radiates for the improvement of the present invention.The photophore of the present invention
The structure of part is referring to embodiment illustrated in fig. 7, and this is by taking the device of three LEDs chips as an example.But three LEDs chips are not limited to,
Two, four, five etc., and for the high power device that some are made up of small-power chip, number of chips is often
Tens of, or even hundreds of.Current some collective's packaged high-power devices, such as device for backlight, number of chips are general
All it is up to a hundred.In display field, number of chips is up to thousands of, is used for example as the LED glass of display, and its size is bigger, uses
The number of chips arrived can be more.But LED glass is not limited to display field, it is additionally operable to the application in terms of illumination, light decoration.
Referring to Fig. 8 and Fig. 7, two electrodes 9 of LED chip 1 are in the same face.The chip of current this structure is bipolar electrode core
Piece, it has Sapphire Substrate 8.By taking the chip that Sapphire Substrate is not stripped as an example.LED chip 1 is contacted with phosphor powder layer 7
Be the position of Sapphire Substrate above, the one side for having Sapphire Substrate is the back side, the one side relative with the back side for LED chip just
, i.e., there are two electrodes in face in the front of LED chip.
Having in LED chip above the one side of electrode has patterned conductive carbon nanotube tube layer 4, conductive carbon nanotube tube layer 4
It is used as the wire being electrically connected between two LED chips.It is conductive so that three chips are cascaded as an example referring to Fig. 9 and Fig. 7
The electrode of three LEDs chips is cascaded by CNT 4, is filled between the gap of patterned conductive CNT 4
Insulating carbon nanotubes 6.CNT is the transparent body, no matter conductive or insulation, pellucidity is presented.In LED core
It is contacted this layer of carbon nanotube layer of the top layer laying where the electrode of piece with LED chip zero distance, can directly export chip
Internal heat, and one has been laid compared to radiating surface very huge for chip area outside, compared to existing lead
Technology, its radiator structure is as far apart as heaven and earth.
There is phosphor powder layer 7 above the electrodeless back side of LED chip 1.Phosphor powder layer 7 can be sprayed on thereon,
Can also first make fluorescent material film, then be fixed in above chip, this structure is without encapsulating structure.For adopting
With the structure without encapsulation, then there is cavity between LED chip and fluorescent material film, it is therefore desirable to indifferent gas is filled in cavity
Body is to protect chip.
Insulation filler 3 is filled between LED chip.Insulation filler 3 can be the materials such as titanium oxide, and titanium oxide is thin
Translucent is being presented with the situation of LED chip uniform thickness in film, and titanium oxide can be sputtered in space between the chips.Titanium oxide
Benefit be that it hardly picks up light, and thermal conductivity is good.In order to improve its transparency, titanium oxide can be mixed into silica gel or ring
In oxygen tree fat, mixture spray attachment is formed into film layer on supporter 2.In one embodiment, titanium oxide is mixed into UV colloids,
Then UV glue is handled with ultraviolet curing.Insulation filler 3 can also be insulating carbon nanotubes, because the thickness of chip has number
Hundred nanometers even thicker, so if insulation filler 3 is insulating carbon nanotubes, its cost can substantially increase.In view of insulation
Filler needs certain thermal conductivity, therefore, it can consider the form using ceramic material association colloid, but this combination
Certain transparency can be sacrificed, this application field not high to transparency requirement is very applicable.If reducing insulation filler
Thermal conductivity requirement, then can use general packaging plastic.In the case where supporter is blue film, insulation filler can be with
It is packaging plastic.But if supporter is silicon substrate, then it is contemplated that using silica as insulation filler, i.e., using extension
One layer of silica is grown between technology, LED chip and is used as insulation filler.
Fig. 9 is shown as the series circuit configuration between LED chip.But when LED chip is large number of, LED
The parallel-connection structure more used between chip, or the mode that connection in series-parallel is combined., should for the embodiment shown in Fig. 7, Fig. 9
The two ends of device are the positive and negative electrode port of external connection.
The present invention also proposes a kind of three-dimensional LED/light source, including circuit board, on circuit boards provided with foregoing semiconductor light emitting
Device.In the Application Example of a LED glass, circuit board is glass circuit board, and circuit board is to be disposed with wire thereon
Clear glass.Glass can be silica glass or lucite.Metallic circuit line is disposed with glass circuit board.
The light emitting semiconductor device of the improvement radiating of the present invention is highly suitable for LED glass, because it can be presented 360 degree
Lighting angle.The technology of the present invention can reduce the problem of LED chip radiating is not smooth in existing LED glass.Due to LED glass
The matrix of circuit board is glass, and the poor heat conduction of glass, this use for resulting in high-power LED chip is limited, or is used
It is short-lived.Invention increases the outer capacity of heat transmission of chip, the area of dissipation of chip surface is very big, even if LED periphery
The poor heat conduction of glass, but be due to the temperature difference of the effect of conductive hot carbon nano pipe, the temperature of chip surface and the temperature of glass
It is obviously reduced.Therefore, the present invention can be obviously prolonged the service life of LED glass, can also increase and use single core of LED chip
The power of piece.
Referring to Fig. 1 to Fig. 7, the present invention also proposes a kind of manufacture method for being used to manufacture luminous semiconductor device shown in Fig. 7,
Comprise the following steps：
Die bond, multiple LED chips are fixed on blue film, and make LED chip has the one side of two electrodes upward.
Once fill, first cover one layer of mask on LED chip surface, LED chip is covered, then by the way of injection
Titanium oxide colloid mixture is filled between LED chip, chip layer is formed, the mask on LED chip surface is then removed.
Conductive layer is made, conductive carbon nanotube tube layer, conductive carbon nanotube are made by magnetron sputtering mode in chip layer
The thickness of layer is 20nm~100nm scopes, but is not limited to this scope.It can also be made using spin coating mode on chip layer
One layer of conductive carbon nanotube.
Graphical treatment, first coats photoresist, then development treatment forms patterned in conductive carbon nanotube layer surface
Conductive carbon nanotube circuit cable architecture, that is, complete to be patterned processing to conductive carbon nanotube tube layer, referring to Fig. 9, make LED chip
Between be electrically connected relation.
Secondary filling, in the graphical space central filler insulating materials of conductive carbon nanotube, forms conductive carbon nanotube
Layer.Insulating materials can be insulating carbon nanotubes material or other insulating materials in the step, but typically require
The material has good thermal conductivity.Because patterned conductive carbon nanotube is divided into several disjunct parts of segmentation,
Referring to Fig. 9, so there is the insulating materials for connecting them good thermal conductivity the even heat of various pieces could scatter, lead
They can constitute that a radiating is overall for electrical carbon nanotube and insulating carbon nanotubes, and such radiating effect can be more preferable, and effect can be more
Substantially.
Supporter is removed, the blue film of supporter is removed.
Fluorescence coating is made, phosphor powder layer is made above the electrodeless back side of LED chip.Making phosphor powder layer can be with
By the way of spraying.
In other embodiments, supporter can be silica, silicon, sapphire, carborundum, ceramics, resin and/or containing gold
The material of category.Supporter selects different materials, then can take different techniques.If for example supporter uses sapphire,
Then conductive carbon nanotube can be by the way of growth and without by the way of magnetron sputtering.
Above-mentioned embodiment is only the preferred embodiment of the present invention, it is impossible to limit the scope of protection of the invention with this,
The change and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed scope.
Claims (3)
1. a kind of manufacture method of luminous semiconductor device, including：
Die bond, multiple LED chips are fixed on supporter, and make LED chip has the one side of two electrodes upward；
Once fill, insulation filler is filled between LED chip, form chip layer；
Conductive layer is made, conductive carbon nanotube tube layer is grown in chip layer；
Graphical treatment, processing is patterned to conductive carbon nanotube tube layer, makes to be electrically connected relation between LED chip；
Secondary filling, in the graphical space central filler insulating materials of conductive carbon nanotube, forms conductive carbon nanotube tube layer；
Supporter is removed, supporter is removed；
Fluorescence coating is made, phosphor powder layer is made above the electrodeless back side of LED chip.
2. the manufacture method of luminous semiconductor device according to claim 1, it is characterised in that：The supporter is oxidation
Silicon, silicon, sapphire, carborundum, ceramics, resin and/or the material containing metal.
3. the manufacture method of luminous semiconductor device according to claim 1, it is characterised in that：The supporter is indigo plant
Film, in the step of removing supporter, removal is peeled off by blue film from chip layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510002978.6A CN104576910B (en) | 2015-01-05 | 2015-01-05 | The manufacture method of luminous semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510002978.6A CN104576910B (en) | 2015-01-05 | 2015-01-05 | The manufacture method of luminous semiconductor device |
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| Publication Number | Publication Date |
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| CN104576910A CN104576910A (en) | 2015-04-29 |
| CN104576910B true CN104576910B (en) | 2017-08-01 |
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| CN201510002978.6A Active CN104576910B (en) | 2015-01-05 | 2015-01-05 | The manufacture method of luminous semiconductor device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107091412A (en) * | 2016-09-30 | 2017-08-25 | 深圳市玲涛光电科技有限公司 | Strip source and its manufacture method, backlight module, electronic equipment |
| CN107978669A (en) * | 2017-11-15 | 2018-05-01 | 维沃移动通信有限公司 | A kind of area source and preparation method thereof |
| WO2021168596A1 (en) * | 2020-02-24 | 2021-09-02 | 张胜翔 | Ultraviolet sterilization module for escalator handrail |
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| CN102110759A (en) * | 2009-12-25 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Structure and method for packaging light-emitting diode (LED) |
| CN102456803A (en) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode |
| CN102593100A (en) * | 2011-01-04 | 2012-07-18 | 纳普拉有限公司 | Substrate for electronic device and electronic device |
| CN203871366U (en) * | 2014-05-14 | 2014-10-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED luminescent device |
| CN203871358U (en) * | 2014-05-15 | 2014-10-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-voltage LED luminescent device |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110759A (en) * | 2009-12-25 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Structure and method for packaging light-emitting diode (LED) |
| CN102456803A (en) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode |
| CN102593100A (en) * | 2011-01-04 | 2012-07-18 | 纳普拉有限公司 | Substrate for electronic device and electronic device |
| CN203871366U (en) * | 2014-05-14 | 2014-10-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED luminescent device |
| CN203871358U (en) * | 2014-05-15 | 2014-10-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-voltage LED luminescent device |
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