CN115116910A - Universal horizontal quartz boat and oxidation heat treatment method for silicon wafers of different specifications simultaneously - Google Patents
Universal horizontal quartz boat and oxidation heat treatment method for silicon wafers of different specifications simultaneously Download PDFInfo
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- CN115116910A CN115116910A CN202210849699.3A CN202210849699A CN115116910A CN 115116910 A CN115116910 A CN 115116910A CN 202210849699 A CN202210849699 A CN 202210849699A CN 115116910 A CN115116910 A CN 115116910A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 142
- 239000010703 silicon Substances 0.000 title claims abstract description 142
- 235000012431 wafers Nutrition 0.000 title claims abstract description 110
- 239000010453 quartz Substances 0.000 title claims abstract description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 238000010438 heat treatment Methods 0.000 title claims abstract description 23
- 230000003647 oxidation Effects 0.000 title claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000000137 annealing Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000011068 loading method Methods 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 229910001868 water Inorganic materials 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 102100021935 C-C motif chemokine 26 Human genes 0.000 claims description 6
- 101000897493 Homo sapiens C-C motif chemokine 26 Proteins 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a universal horizontal quartz boat, comprising: including the roof, the bottom plate, and two at least connecting pieces, the upper end and the roof of every connecting piece are connected, the lower extreme and the bottom plate of every connecting piece are connected, the inside wall of every connecting piece sets up a plurality of horizontal flitchs that carry, all carry the flitch front end and lie in the inside that all connecting pieces enclose into the region, all of same height department carry the flitch and form a rack, the rack is used for placing the silicon chip, every carries and sets up two at least place the platform on the flitch, adjacent place the platform and form the step form, the place the platform that is close to the front end that carries the flitch is minimum, place the space that the formation specification silicon chip corresponds of the place platform of same height department, place the silicon chip of different specifications on every layer of rack, carry out oxidation heat treatment after placing different specification silicon chips with the quartz boat of a specification, manufacturing cost is reduced. Meanwhile, an oxidation heat treatment method for silicon wafers of different specifications is provided.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon production, in particular to a universal horizontal quartz boat and an oxidation heat treatment method for silicon wafers of different specifications.
Background
In the semiconductor industry, in order to reduce the true resistivity of a silicon wafer, oxidation heat treatment is generally required to be carried out on the silicon wafer to enable an oxygen donor in the silicon wafer to return to a gap oxygen state, after the heat treatment is finished, the silicon wafer needs to be rapidly cooled to enable the silicon wafer to rapidly pass through a temperature range of 450 plus 550 ℃, in the process, the silicon wafer is placed in a quartz boat for carrying out, in order to ensure the stability of the silicon wafer during oxidation annealing and cooling, the quartz boat is required to be capable of being baked at high temperature, and the silicon wafer has good strength and heat resistance and is not easy to deform. At present the quartz boat of generally used encloses synthetic frame construction by four horizontal pin and four vertical poles, has seted up the silicon chip draw-in groove on four horizontal pin, and the silicon chip interval is inserted in the silicon chip draw-in groove, then will be equipped with the quartz boat of silicon chip and place into the diffusion stove and concentrate the diffusion, and this kind of vertical quartz boat places the silicon chip mode fixed single, can not adjust, only can be applicable to the silicon chip of specific size.
Because of market demands, silicon wafers have various sizes, in the prior art, silicon wafers with the same specification are usually placed in quartz boats with corresponding specifications for oxidation heat treatment, for example, when oxidation heat treatment is performed on silicon wafers with 8 inches and 12 inches, the silicon wafers with 8 inches and 12 inches are placed in the quartz boats with two specifications which need to be adapted, the specifications of the corresponding silicon wafers have other sizes, more matched quartz boats are required to be used for bearing, and the manufacturing cost of manufacturing the silicon wafers is increased by the quartz boats with various specifications.
Disclosure of Invention
The invention mainly aims to provide a universal horizontal quartz boat, which solves the problem that in the prior art, silicon wafers with the same specification need to be placed in quartz boats with corresponding specifications in the oxidation heat treatment process, so that the specifications of the quartz boats are more, and the manufacturing cost is increased.
The utility model provides a general horizontal quartz boat, which comprises a top plate, the bottom plate, and two at least connecting pieces, the upper end and the roof of every connecting piece are connected, the lower extreme and the bottom plate of every connecting piece are connected, separate with predetermined interval between the adjacent connecting piece, the inside wall of every connecting piece sets up a plurality of horizontal flitchs that carry, all carry the inside that the flitch front end is located all connecting pieces and enclose the region, all of same height department carry the flitch shape and become a rack, the rack is used for placing the silicon chip, every carries and sets up two at least place the platform on the flitch, adjacent place the platform and form the step form, it is minimum to be close to the place the platform who carries the front end of flitch, place the space that the place that the silicon chip that forms a specification corresponds that the place platform of same height department encloses, place the silicon chip of different specifications on every layer of rack.
Preferably, the upper side of each material carrying plate is in a continuous step shape, and the lower side of the corresponding material carrying plate is in a corresponding step shape.
Preferably, the distance between each layer of the loading plates is 15-25 mm.
Preferably, a fork is provided on the top plate, and the fork is inserted by an external transfer fork to move the universal cross quartz boat.
Preferably, the number of the forks is two, the two forks are arranged on the upper end face of the top plate side by side, and the end faces of the forks are U-shaped grooves.
Preferably, at least three support frames are arranged on the lower end face of the bottom plate and used for supporting and enabling the universal horizontal quartz boat to be stably placed on the station.
Preferably, the bottom plate is circular, and a plurality of support frames surround and are distributed on the lower end face of the bottom plate.
An oxidation heat treatment method for silicon wafers of different specifications at the same time is realized by adopting the universal horizontal quartz boat, and comprises the following steps:
s1, oxidizing heat pretreatment, wherein the oxidizing heat pretreatment sequentially comprises alkali washing, cleaning and acid washing.
S2, oxidizing annealing treatment, namely preheating an annealing furnace, then placing silicon wafers with different specifications in the universal horizontal quartz boat, then placing the universal horizontal quartz boat loaded with the silicon wafers in the annealing furnace to heat for 30-60min, finally taking the universal horizontal quartz boat out of the annealing furnace by using a matched quartz boat transfer fork and placing the universal horizontal quartz boat in a cooling station, and starting a fan to rapidly cool the annealed silicon wafers.
Preferably, the "alkaline washing" in the step S1 is specifically: firstly, putting a silicon wafer into an etching basket, immersing the silicon wafer into a solution formed by mixing a NaoH solution, a TSC-1 surfactant and water, wherein the concentration of the NaoH solution is 49%, and the volume ratio of the 49% NaoH solution to the TSC-1 surfactant to the water is 195:105:2, so as to remove grease on the surface of the silicon wafer, and taking out the etching basket after etching for 8-10 min.
The "cleaning" in the step S1 is specifically: and then the silicon wafer is placed into an overflow groove, and the residual corrosive liquid on the surface of the silicon wafer is cleaned by using overflowing deionized water.
The "acid washing" in the step S1 is specifically: then placing the silicon wafer into an acid solution formed by mixing HF, HNO3 and CH3COOH, removing a damage layer on the surface of the silicon wafer, wherein the mass ratio of HF to HNO3 is 49%, the mass ratio of CH3COOHHF is 99%, 49% HF to 70% to 3, 99% to CH3COOH and H2O is 1-1.5:3-4:2-3:5-7, taking out an etching basket after etching for 8-10min, cleaning the etching basket by using flowing deionized water in the same manner, and finally drying the silicon wafer by blowing.
Preferably, the "preheating of the annealing furnace" in the step S2 is to set the temperature of the annealing furnace at 600-.
The step S2 of "placing silicon wafers of different specifications in the universal horizontal quartz boat" is specifically: the silicon wafers with different specifications are sequentially placed in the horizontal quartz boats, the silicon wafers with the smallest specifications are placed in the placing spaces of the innermost layer and the lowermost layer, the silicon wafers with the largest specifications are placed in the placing spaces of the outermost layer and the uppermost layer, and the universal horizontal quartz boat containing the silicon wafers is quickly and stably placed in an annealing furnace for heating for 30-60min by using the matched quartz boat transfer fork.
The step of turning on the fan to rapidly cool the annealed silicon wafer in the step of S2 is specifically: the fan cools the quartz boat and the silicon wafer in an inclined downward mode, an included angle inclined by 10 degrees is formed between the central shaft of the fan and the uppermost end of the quartz boat, and the wind speed is 30-50 m/s.
The universal horizontal quartz boat is used for placing silicon wafers with different specifications for oxidation heat treatment, the silicon wafer with the smallest specification is placed in the placing spaces of the innermost layer and the lowermost layer, the silicon wafers with the largest specification are placed in the placing spaces at the outermost layer and the uppermost layer, the problem that quartz boats with different placing specifications are required to be replaced when the silicon wafers with different specifications are subjected to oxidation heat treatment is solved, the universal horizontal quartz boats with the silicon wafers with different specifications are transferred into an annealing furnace by a matched quartz boat transfer fork for oxidation annealing, the universal horizontal quartz boats are taken out after the annealing is finished, the silicon wafers are rapidly cooled by a fan immediately, because the silicon chip is horizontally arranged in the device and is fixed by the arrangement space surrounded by all the material loading plates at the same height, and the lower surface of the silicon chip is attached to each placing platform, so that the problem of silicon chip shaking cannot occur in the air cooling process.
Drawings
FIG. 1 is a three-dimensional structure diagram of a universal horizontal quartz boat according to the present invention.
Fig. 2 is a front view of fig. 1.
Fig. 3 is a cross-sectional view at a-a in fig. 2.
FIG. 4 is a schematic diagram of silicon wafers of different specifications placed in a universal horizontal quartz boat and moved by using a quartz boat transfer fork.
In the figure: the quartz boat comprises a universal horizontal quartz boat 100, a top plate 10, a fork 11, a bottom plate 20, a support frame 21, a connecting piece 30, a loading plate 31, a placing platform 32, a quartz boat transfer fork 200 and a silicon wafer 300.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Referring to fig. 1 to 4, the universal horizontal quartz boat 100 includes a top plate 10, a bottom plate 20, and at least two connecting members 30, wherein an upper end of each connecting member 30 is connected to the top plate 10, a lower end of each connecting member 30 is connected to the bottom plate 20, adjacent connecting members 30 are spaced apart from each other at a predetermined interval, a plurality of transverse material loading plates 31 are disposed on an inner sidewall of each connecting member 30, front ends of all material loading plates 31 are located inside an area defined by all connecting members 30, all material loading plates 31 at the same height form a rack for placing silicon wafers 300, at least two placing platforms 32 are disposed on each material loading plate 31, adjacent placing platforms 32 form a step shape, the placing platform 32 near the front end of the material loading plate 31 is the lowest, the placing platforms 32 at the same height form a placing space corresponding to silicon wafers 300 of one specification, silicon wafers 300 of different specifications are placed on each layer of rack, the silicon wafers 300 with different specifications are placed on the placing frame layer by layer from small to large. In this embodiment, the top plate 10 and the bottom plate 20 are circular or circular, the circular top plate 10 and the circular bottom plate 20 are favorable for air cooling to flow to the upper and lower surfaces of the silicon wafer, so as to facilitate cooling, the number of the connecting members 30 is three, the three connecting members 30 are uniformly distributed between the top plate 10 and the bottom plate 20, and an included angle between the two connecting members 30 is 120 ° in this embodiment. In other embodiments, the top plate 10 and the bottom plate 20 may have a square or rectangular shape, and are designed accordingly according to the specification of the silicon wafer 300 and the heating space of the annealing furnace.
Further, the upper side of each material carrying plate 31 is continuously stepped, and the lower side of the corresponding material carrying plate 31 is correspondingly stepped. The upper surface and the lower surface of the material carrying plate 31 are all step-shaped, so that the purpose of reducing materials can be achieved.
Furthermore, the distance between each layer of the material loading plates 31 is 15-25mm,
further, a fork 11 is provided on the top plate 10, and the fork 11 is inserted by an external transfer fork 200 to move the universal cross quartz boat 100.
Further, the number of the forks 11 is two, two forks 11 are arranged side by side on the upper end surface of the top plate 10, and the end surface of the fork 11 is a U-shaped groove.
Further, at least three support frames 21 are arranged on the lower end face of the bottom plate 20, and the support frames 21 are used for supporting and enabling the universal horizontal quartz boat 100 to be stably placed on the station.
Further, the bottom plate 20 is annular, and a plurality of support frames 21 are circumferentially distributed on the lower end surface of the bottom plate 20.
The universal horizontal quartz boat 100 is used for placing the silicon wafers 300 with different specifications for oxidation heat treatment, the silicon wafers 300 with the minimum specification are placed in the placing spaces of the innermost layer and the lowermost layer, the silicon wafers 300 with the maximum specification are placed in the placing spaces of the outermost layer and the uppermost layer, the problem that the silicon wafers 300 with different specifications need to be replaced when the oxidation heat treatment is carried out on the silicon wafers 300 with different specifications is avoided, the universal horizontal quartz boat 100 with the silicon wafers 300 with different specifications is transferred into an annealing furnace by a matched quartz boat transfer fork 200 for oxidation annealing, the universal horizontal quartz boat 100 is taken out after the annealing is finished, the silicon wafers 300 are rapidly cooled by a fan immediately, and during cooling, because the silicon wafers 300 are horizontally placed in the device, the silicon wafers 300 are fixed by the placing spaces surrounded by all the material carrying plates 31 at the same height, and the lower surfaces of the silicon wafers 300 are attached to each placing platform 32, the problem that the silicon wafers 300 sway in the air cooling process can not occur, although the vertical quartz boat in the prior art can place a plurality of silicon wafers 300 with uniform specifications, in order to place and take the silicon wafers 300, gaps are reserved between the two sides of the silicon wafers 300 and the baffle of the vertical quartz boat, so that the silicon wafers 300 are shaken in the air cooling process of the vertical quartz boat.
An oxidation heat treatment method for silicon wafers with different specifications simultaneously comprises the following steps:
s1, oxidizing heat pretreatment, wherein the oxidizing heat pretreatment sequentially comprises alkali washing, cleaning and acid washing;
s2, oxidizing annealing treatment, namely, preheating an annealing furnace, then placing silicon wafers 300 with different specifications into a universal horizontal quartz boat of the application, rapidly and stably placing the universal horizontal quartz boat loaded with the silicon wafers 300 into the annealing furnace for heating for 30-60min by using a matched quartz boat transfer fork 200, finally taking the universal horizontal quartz boat out of the annealing furnace by using the matched quartz boat transfer fork 200 and placing the universal horizontal quartz boat in a cooling station, rapidly and stably placing the quartz boat loaded with the silicon wafers 300 into the annealing furnace by using the matched quartz boat transfer fork 200, after the annealing time is over, taking out the quartz boat in the same way and placing the quartz boat on a cooling table, and starting a fan to rapidly cool the annealed silicon wafers 300.
Further, the "alkali washing" in the step S1 is specifically: firstly, putting a silicon wafer 300 into an etching basket, immersing the silicon wafer into a solution formed by mixing a NaoH solution, a TSC-1 surfactant and water, wherein the concentration of the NaoH solution is 49%, and the volume ratio of the 49% NaoH solution to the TSC-1 surfactant to the water is 195:105:2, so as to remove grease on the surface of the silicon wafer 300, etching for 8-10min, and taking out the etching basket;
the "cleaning" in the step S1 is specifically: putting the silicon wafer into an overflow groove, and cleaning the residual corrosive liquid on the surface of the silicon wafer 300 by using overflowing deionized water;
the "acid washing" in the step S1 is specifically: then placing the silicon wafer into an acid solution formed by mixing HF, HNO3 and CH3COOH, removing a damaged layer on the surface of the silicon wafer 300, wherein the mass ratio of the HF to the HNO3 to the CH3COOHHF to the HF to the 49% to the 70% to the HNO3 to the 99% to the CH3COOH to the H2O is 1-1.5:3-4:2-3:5-7, taking out an etching basket after etching for 8-10min, cleaning the etching basket with flowing deionized water in the same manner, and finally drying the silicon wafer 300.
Further, the "preheating of the annealing furnace" in the step S2 is to set the temperature of the annealing furnace at 600-;
the step S2 of "placing the silicon wafers 300 of different specifications in the universal horizontal quartz boat" is specifically: the silicon wafers 300 with different specifications are sequentially placed in the horizontal quartz boat, the silicon wafer 300 with the smallest specification is placed in the placing spaces of the innermost layer and the lowermost layer, and the silicon wafer 300 with the largest specification is placed in the placing spaces of the outermost layer and the uppermost layer; this silicon chip 300 of different specifications is 8 cun, 12 cun, also can be for other sizes, can put into 8 cun, 12 cun silicon chip 300 simultaneously, is different from traditional annealing mode, needs to select corresponding quartz boat according to the size of silicon chip 300, and this quartz boat utilization ratio is higher, can once only accomplish two kinds of silicon chip 300's oxidation annealing with same quartz boat, the effectual use cost who saves the quartz boat, also can accomplish the silicon chip 300 annealing of more sizes.
The step of turning on the fan to rapidly cool the annealed silicon wafer 300 in the step of S2 includes: the fan cools the quartz boat and the silicon wafer 300 in an inclined downward mode, an included angle inclined by 10 degrees is formed between the central shaft of the fan and the uppermost end of the quartz boat, and the wind speed is 30-50 m/s. Because the silicon chip 300 is placed in the general horizontal quartz boat in a flat mode, the silicon chip 300 is rapidly cooled by the fan, the upper surface of the silicon chip 300 is acted by the downward air flow in an inclined mode, the silicon chip 300 cannot shake violently due to the large blowing force of the fan, the integrity of the silicon chip 300 is kept, meanwhile, the lower surface gas of the silicon chip 300 flows under the driving of the flowing air flow on the upper surface of the silicon chip 300, the upper surface and the lower surface of the silicon chip 300 can be cooled by the wind speed, the balance and the stability of the oxygen donor in the silicon chip 300 are facilitated, and the resistivity test is greatly promoted. The method not only solves the use problem of replacing quartz boats for the silicon wafers 300 with different specifications during annealing in the prior art, but also avoids the problem of fragments caused by the fact that the widths of clamping grooves of the quartz boats vertically placed on the silicon wafers 300 are not matched with the thicknesses of the silicon wafers 300 in the cooling process, and greatly saves the production cost.
Claims (10)
1. The utility model provides a general horizontal quartz boat, a serial communication port, which comprises a top plate, the bottom plate, and two at least connecting pieces, the upper end and the roof of every connecting piece are connected, the lower extreme and the bottom plate of every connecting piece are connected, separate with predetermined interval between the adjacent connecting piece, the inside wall of every connecting piece sets up a plurality of horizontal year flitchs, all carry the inside that flitch front end is located all connecting pieces and enclose into the region, all year flitch plates of same height department form a rack, the rack is used for placing the silicon chip, set up two at least place the platform on every year flitch, adjacent place the platform and form the step form, the place the platform that is close to the front end that carries the flitch is minimum, place the space that the place that the platform of same height department encloses and establishes and form a specification silicon chip and correspond, place the silicon chip of different specifications on every layer of rack.
2. The universal cross-type quartz boat of claim 1, wherein each material loading plate has an upper side with a continuous step shape and a lower side with a corresponding step shape.
3. The universal cross quartz boat of claim 2 wherein the spacing between each layer of load plates is 15-25 mm.
4. The universal cross quartz boat of claim 1 wherein the top plate is provided with forks for external transfer forks to insert for moving the universal cross quartz boat.
5. The universal cross quartz boat of claim 4 wherein there are two forks, two forks are placed side by side on the top end of the top plate, and the end of the forks is U-shaped.
6. The universal cross quartz boat of claim 1 wherein at least three supports are provided on the lower end of the bottom plate, said supports being adapted to support the universal cross quartz boat in a stable position.
7. The universal cross quartz boat of claim 6 wherein the bottom plate is annular and the plurality of supports are circumferentially disposed on the bottom surface of the bottom plate.
8. An oxidation heat treatment method for silicon wafers with different specifications at the same time, which is realized by adopting the universal horizontal quartz boat as claimed in any one of claims 1 to 7, and is characterized by comprising the following steps:
s1, oxidizing heat pretreatment, wherein the oxidizing heat pretreatment sequentially comprises alkali washing, cleaning and acid washing;
s2, oxidizing annealing treatment, namely preheating an annealing furnace, then placing silicon wafers with different specifications in the universal horizontal quartz boat, then placing the universal horizontal quartz boat loaded with the silicon wafers in the annealing furnace to heat for 30-60min, finally taking the universal horizontal quartz boat out of the annealing furnace by using a matched quartz boat transfer fork and placing the universal horizontal quartz boat in a cooling station, and starting a fan to rapidly cool the annealed silicon wafers.
9. The oxidation heat treatment method for silicon wafers of different specifications at the same time as set forth in claim 8, wherein the "alkali washing" in the step S1 is specifically: firstly, putting a silicon wafer into an etching basket, immersing the silicon wafer into a solution formed by mixing a NaoH solution, a TSC-1 surfactant and water, wherein the concentration of the NaoH solution is 49 percent, and the volume ratio of the 49 percent NaoH solution to the TSC-1 surfactant to the water is 195:105:2, so as to remove grease on the surface of the silicon wafer, and taking out the etching basket after etching for 8-10 min;
the "cleaning" in the step S1 is specifically: putting the silicon wafer into an overflow groove, and cleaning residual corrosive liquid on the surface of the silicon wafer by using overflowing deionized water;
the "acid washing" in the step S1 is specifically: then placing the silicon wafer into an acid solution formed by mixing HF, HNO3 and CH3COOH, removing a damaged layer on the surface of the silicon wafer, wherein the mass ratio of HF to HNO3 is 49%, the mass ratio of CH3COOHHF is 99%, the mass ratio of 49% HF to 70% to HNO3, the mass ratio of 99% to CH3COOH and H2O is 1-1.5:3-4:2-3:5-7, taking out an etching basket after etching for 8-10min, cleaning the etching basket with flowing deionized water in the same manner, and finally drying the silicon wafer by blowing.
10. The method for oxidation heat treatment of silicon wafers of different specifications simultaneously as set forth in claim 8, wherein the "preheating of the annealing furnace" in the step S2 is to set the temperature of the annealing furnace at 600-800 ℃ for 20 minutes to stabilize the temperature in the furnace;
the step S2 of "placing silicon wafers of different specifications in the universal horizontal quartz boat" is specifically: sequentially placing silicon wafers with different specifications into a horizontal quartz boat, placing the silicon wafer with the smallest specification into the placing spaces of the innermost layer and the lowermost layer, placing the silicon wafer with the largest specification into the placing spaces of the outermost layer and the uppermost layer, and quickly and stably placing the universal horizontal quartz boat with the silicon wafers in the annealing furnace by using a matched quartz boat transfer fork for heating for 30-60 min;
the step of turning on the fan to rapidly cool the annealed silicon wafer in the step of S2 is specifically: the fan cools the quartz boat and the silicon wafer in an inclined downward mode, an included angle inclined by 10 degrees is formed between the central shaft of the fan and the uppermost end of the quartz boat, and the wind speed is 30-50 m/s.
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| CN202210849699.3A CN115116910A (en) | 2022-07-19 | 2022-07-19 | Universal horizontal quartz boat and oxidation heat treatment method for silicon wafers of different specifications simultaneously |
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| CN202210849699.3A CN115116910A (en) | 2022-07-19 | 2022-07-19 | Universal horizontal quartz boat and oxidation heat treatment method for silicon wafers of different specifications simultaneously |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995125A (en) * | 2012-10-12 | 2013-03-27 | 孙新利 | Heat treatment process of semiconductor silicon wafer |
| CN205069608U (en) * | 2015-10-27 | 2016-03-02 | 上海华力微电子有限公司 | Brilliant boat of oxidation furnace |
| CN205692810U (en) * | 2016-06-21 | 2016-11-16 | 内蒙古日月太阳能科技有限责任公司 | Diffusing quartz boat |
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| CN214588767U (en) * | 2021-03-09 | 2021-11-02 | 内蒙古科晟科技有限公司 | Quartz boat for annealing IC-grade silicon wafer |
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| CN205069608U (en) * | 2015-10-27 | 2016-03-02 | 上海华力微电子有限公司 | Brilliant boat of oxidation furnace |
| CN205692810U (en) * | 2016-06-21 | 2016-11-16 | 内蒙古日月太阳能科技有限责任公司 | Diffusing quartz boat |
| CN112397425A (en) * | 2019-08-14 | 2021-02-23 | 江苏金晖光伏有限公司 | Quartz boat for processing silicon wafers |
| CN112820642A (en) * | 2021-01-08 | 2021-05-18 | 开化晶芯电子有限公司 | Heat treatment method of semiconductor silicon wafer |
| CN214588767U (en) * | 2021-03-09 | 2021-11-02 | 内蒙古科晟科技有限公司 | Quartz boat for annealing IC-grade silicon wafer |
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