CN214588767U - Quartz boat for annealing IC-grade silicon wafer - Google Patents
Quartz boat for annealing IC-grade silicon wafer Download PDFInfo
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- CN214588767U CN214588767U CN202120497174.9U CN202120497174U CN214588767U CN 214588767 U CN214588767 U CN 214588767U CN 202120497174 U CN202120497174 U CN 202120497174U CN 214588767 U CN214588767 U CN 214588767U
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- bottom bracket
- annealing
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Abstract
The utility model relates to a quartz boat is used in annealing of IC level silicon chip, including bottom bracket, upper portion frame, baffle one, baffle two, set-square, upper portion horizontal pole and bottom horizontal pole, baffle one perpendicular to bottom bracket fixed connection, baffle two perpendicular to bottom bracket fixed connection, the top of baffle one and baffle two all is equipped with the constant head tank, the constant head tank at baffle one top includes constant head tank one, constant head tank two, constant head tank three and constant head tank four, the constant head tank at baffle two tops includes constant head tank five, constant head tank six, constant head tank seven and constant head tank eight, the set-square is fixed between bottom bracket and baffle one, the upper portion horizontal pole sets up between the vertical frame of upper portion frame, the bottom horizontal pole sets up between the vertical frame of bottom bracket. The utility model discloses a setting of constant head tank on the baffle for the user only need change corresponding size the upper portion frame when carrying out annealing treatment to the silicon chip of different specifications can, convenient operation practices thrift the cost.
Description
Technical Field
The utility model relates to a quartz boat technical field, in particular to quartz boat is used in IC level silicon chip annealing.
Background
The quartz boat is a tool for bearing silicon wafers, and in the silicon wafer diffusion process, the silicon wafers are placed in the quartz boat for high-temperature treatment. During production and processing of the monocrystalline silicon wafer, the silicon wafer contains oxygen, the correct measurement of the resistivity of the silicon wafer can be influenced after oxidation reaction, and the oxygen on the surface of the silicon wafer can be volatilized and removed through an annealing process, so that the number of impurities and the defects of the silicon wafer are reduced, and the next processing treatment of products is facilitated. When annealing is carried out, the silicon wafer needs to be placed in an annealing furnace, and is taken out after annealing is finished, so that the quality of the silicon wafer is not polluted by a proper silicon wafer containing tool at high temperature, and the silicon wafer is convenient to take. The quartz boat used in the prior art is easy to rollover in the taking process, so that the silicon wafer is cracked, the output of products is reduced, the production efficiency is low, one quartz boat can only be suitable for the silicon wafers of one specification, and when the silicon wafers of different specifications are annealed, the quartz boat of the corresponding specification needs to be replaced, so that the cost is improved.
SUMMERY OF THE UTILITY MODEL
In order to improve the problem that proposes among the above-mentioned background art, the utility model provides a quartz boat is used in IC level silicon chip annealing.
The utility model provides a pair of quartz boat is used in IC level silicon chip annealing adopts following technical scheme:
a quartz boat for annealing IC-grade silicon wafers comprises a bottom bracket, an upper frame, a baffle I, a baffle II, a triangular plate, an upper cross rod and a bottom cross rod, the bottom bracket is of a groove-shaped frame structure, the upper frame is of a rectangular frame structure, the baffle plate I is perpendicular to the bottom bracket and is fixedly connected with the bottom bracket, the baffle plate II is perpendicular to the bottom bracket and fixedly connected with the bottom bracket, the baffle plate I and the baffle plate II are arranged at two ends of the bottom bracket in parallel, the top parts of the first baffle plate and the second baffle plate are respectively provided with a positioning groove, the positioning groove at the top part of the first baffle plate comprises a first positioning groove, a second positioning groove, a third positioning groove and a fourth positioning groove, the positioning groove at the top of the baffle II comprises a positioning groove five, a positioning groove six, a positioning groove seven and a positioning groove eight, the triangle is fixed between the bottom bracket and the baffle I, the upper cross bar is disposed between the upper frame longitudinal frames and the bottom cross bar is disposed between the bottom bracket longitudinal frames.
By adopting the technical scheme, when annealing treatment is carried out on silicon wafers of different specifications by a user, only the upper frame of the corresponding size needs to be replaced, the operation is convenient, and the cost is saved.
Preferably, the bottom bracket is of a groove-shaped frame structure consisting of four quartz round rods, and the upper frame is of a rectangular frame structure consisting of four quartz round rods.
Preferably, the bottom bracket is provided with an inclined plane inwards perpendicular to the quartz round rods on two sides of the bottom cross rod.
Preferably, the upper cross rods are quartz round rods and are provided with a plurality of cross rods, and the bottom cross rods are quartz round rods.
Preferably, the inclined plane is provided with a silicon wafer fixing groove corresponding to the upper cross rod.
By adopting the technical scheme, the silicon wafer can be stably placed in the carrier in the annealing process and taken, and the loss in the annealing process is reduced.
Preferably, the upper frame is clamped with the positioning groove.
Preferably, the triangular plates are respectively arranged on two sides in the bottom bracket groove, the bottom ends of the triangular plates are fixedly connected with the quartz rods on two sides of the bottom bracket, the other sides of the triangular plates are fixedly connected with the outer sides of the first baffle plates, and transverse plates are arranged between the two triangular plates and located at the bottom ends of the two triangular plates.
Preferably, a through hole is formed in the center of the transverse plate.
By adopting the technical scheme, the operation in the annealing furnace is more convenient, and the bottom bracket can be taken as a handle conveniently.
To sum up, the utility model discloses following useful technological effect has:
1. the utility model discloses a setting of constant head tank on the baffle for the user only need change corresponding size the upper portion frame when carrying out annealing treatment to the silicon chip of different specifications can, convenient operation practices thrift the cost.
2. The utility model discloses set up the silicon chip fixed slot on the quartzy pole of bottom bracket both sides and set up the upper portion horizontal pole in the upper portion frame, guarantee that the silicon chip is annealing and is placed the in-process of taking and can be stable in the carrier, reduce the loss in the annealing process.
3. The utility model discloses leave the through-hole on the diaphragm, make the operation in the annealing furnace more convenient, the bottom bracket can conveniently be taken as the handle.
Drawings
FIG. 1 is a front view of a quartz boat for annealing IC-grade silicon wafers according to the present invention;
fig. 2 is a top view of the present invention;
fig. 3 is a left side view of the present invention;
fig. 4 is a right side view of the present invention.
Wherein, 1, a bottom bracket; 2. an upper frame; 3. a first baffle plate; 4. a second baffle plate; 5. a set square; 6. an upper cross bar; 7. a bottom cross bar; 8. positioning a first groove; 9. positioning a second groove; 10. positioning a groove III; 11. positioning a groove IV; 12. positioning a groove V; 13. positioning a groove six; 14. a seventh positioning groove; 15. positioning a groove eight; 16. a bevel; 17. a silicon wafer fixing groove; 18. a transverse plate; 19. and a through hole.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The embodiment of the utility model discloses IC level silicon chip quartz boat for annealing. Referring to fig. 1, the solar cell module comprises a bottom bracket 1, an upper frame 2, a first baffle 3, a second baffle 4, a triangular plate 5, an upper cross rod 6 and a bottom cross rod 7, wherein the first baffle 3 is perpendicular to the bottom bracket 1 and fixedly connected, the second baffle 4 is perpendicular to the bottom bracket 1 and fixedly connected, the triangular plate 5 is fixed between the bottom bracket 1 and the first baffle 3, and a silicon wafer fixing groove 17 corresponding to the upper cross rod 6 is formed in an inclined surface 16.
Referring to fig. 2, the bottom bracket 1 is a groove-shaped frame structure composed of four quartz round bars, the upper frame 2 is a rectangular frame structure composed of four quartz round bars, the first baffle 3 and the second baffle 4 are arranged at two ends of the bottom bracket 1 in parallel, the upper cross rod 6 is arranged between longitudinal frames of the upper frame 2, the bottom cross rod 7 is arranged between the longitudinal frames of the bottom bracket 1, the upper cross rod 6 is a plurality of quartz round bars, the bottom cross rod 7 is a quartz round bar, transverse plates 18 are arranged between the two corner plates 5 and at the bottom ends of the two corner plates 5, and through holes 19 are formed in the center of the transverse plates 18.
Referring to fig. 3 and 4, the top of baffle 3 and baffle two 4 all is equipped with the constant head tank, the constant head tank at the top of baffle 3 includes constant head tank 8, constant head tank two 9, constant head tank three 10 and constant head tank four 11, the constant head tank at the top of baffle two 4 includes constant head tank five 12, constant head tank six 13, constant head tank seven 14 and constant head tank eight 15, the quartz rod of bottom bracket 1 perpendicular to bottom horizontal pole 7's both sides inwards is equipped with inclined plane 16, upper portion frame 2 and constant head tank joint, set-square 5 sets up respectively in bottom bracket 1 inslot both sides, the quartz rod fixed connection of the bottom of set-square 5 and bottom bracket 1 both sides, the opposite side of set-square 5 and the outside fixed connection of baffle 3.
In practical application: the bottom bracket 1 is of a groove-shaped frame structure, inclined planes 16 are inwards arranged on the bottom bracket (1) perpendicular to quartz round rods on two sides of the bottom cross rod 7, and silicon wafer fixing grooves 17 corresponding to the upper cross rod 6 are uniformly formed in the inclined planes 16. The upper frame 2 is of a rectangular frame structure, the baffle I3 is fixedly connected with the bottom bracket 1 in a vertical mode, the baffle II 4 is fixedly connected with the bottom bracket 1 in a vertical mode, the baffle I3 and the baffle II 4 are arranged at two ends of the bottom bracket 1 in parallel, the positioning groove in the top of the baffle I3 comprises a positioning groove I8, a positioning groove II 9, a positioning groove III 10 and a positioning groove IV 11, the positioning groove in the top of the baffle II 4 comprises a positioning groove V12, six 13 of constant head tank, seven 14 of constant head tank and eight 15 of constant head tank, upper portion frame 2 and constant head tank joint, constant head tank one 8 and constant head tank five 12 cooperate with the upper portion frame 2 both ends of the same specification respectively, constant head tank two 9 and constant head tank six 13 cooperate with the upper portion frame 2 both ends of the same specification respectively, constant head tank three 10 and constant head tank seven 14 cooperate with the upper portion frame 2 both ends of the same specification respectively, constant head tank four 11 and constant head tank eight 15 cooperate with the upper portion frame 2 both ends of the same specification respectively. The set square 5 is respectively arranged at two sides in the groove of the bottom bracket 1, the bottom end of the set square 5 is fixedly connected with the quartz rods at two sides of the bottom bracket 1, the other side of the set square 5 is fixedly connected with the outer side of the baffle plate I3, a transverse plate 18 is arranged between the two triangular plates 5 and at the bottom end of the two triangular plates 5, and a through hole 19 is formed in the center of the transverse plate 18. The upper cross rod 6 is arranged between the upper frame 2 longitudinal frames, the upper cross rod 6 is a quartz round rod and is provided with a plurality of, the bottom cross rod 7 is arranged between the bottom bracket 1 longitudinal frames, and the bottom cross rod 7 is a quartz round rod.
The working principle is as follows: the bottom bracket 1 is a groove-shaped frame structure composed of four quartz round rods, the quartz round rods at two sides of the bottom bracket 1, which are vertical to the bottom cross rod 7, are inwards provided with inclined planes 16, silicon wafer fixing grooves 17 corresponding to the upper cross rod 6 are arranged on the inclined planes 16, so that silicon wafers can be stably placed in a carrier in the annealing process and the loss in the annealing process is reduced, the baffle plate I3 is fixedly connected with the bottom bracket 1, the baffle plate II 4 is fixedly connected with the bottom bracket 1, the baffle plate I3 and the baffle plate II 4 are arranged at two ends of the bottom bracket (1) in parallel, the positioning groove at the top of the baffle plate I3 comprises a positioning groove I8, a positioning groove II 9, a positioning groove III 10 and a positioning groove IV 11, the positioning groove at the top of the baffle plate II 4 comprises a positioning groove V12, a positioning groove VI 13, a positioning groove VII and a positioning groove VIII, and the upper frame 2 is a rectangular frame structure composed of quartz round rods, the upper frame 2 is clamped with the positioning groove, so that when a user anneals silicon wafers of different specifications, the upper frame 2 of a corresponding size only needs to be replaced, the operation is convenient, and the cost is saved. The set-square 5 is fixed between bottom bracket 1 and baffle 3, and set-square 5 sets up respectively in 1 inslot both sides of bottom bracket, the quartz rod fixed connection of the bottom of set- square 5 and 1 both sides of bottom bracket, the opposite side of set-square 5 and the outside fixed connection of baffle 3, and the bottom that lies in two three scute 5 between two three scutes 5 is provided with diaphragm 18, can conveniently take as the handle. The center of the transverse plate 18 is provided with a through hole 19, so that the annealing furnace can be operated conveniently by using tools. The upper cross rod 6 is arranged between the upper frame 2 longitudinal frames and is provided with a plurality of parts for supporting and fixing the upper frame 2 and the silicon wafers, the bottom cross rod 7 is arranged between the bottom bracket 1 longitudinal frames and is used for supporting and fixing the bottom bracket 1, specific quantity can be set according to the size of a specific quartz boat, and the upper cross rod 6 and the bottom cross rod 7 are quartz round rods.
Above is the preferred embodiment of the utility model, not limit according to this the utility model discloses a protection scope, the event: all equivalent changes made according to the structure, shape and principle of the utility model are covered within the protection scope of the utility model.
Claims (8)
1. The utility model provides a quartz boat is used in IC level silicon chip annealing which characterized in that: including bottom bracket (1), upper portion frame (2), baffle (3), baffle two (4), set-square (5), upper portion horizontal pole (6) and bottom horizontal pole (7), bottom bracket (1) is cell type frame construction, upper portion frame (2) are the rectangle frame construction, baffle one (3) perpendicular to bottom bracket (1) fixed connection, baffle two (4) perpendicular to bottom bracket (1) fixed connection, baffle one (3) and baffle two (4) parallel arrangement are at bottom bracket (1) both ends, the top of baffle one (3) and baffle two (4) all is equipped with the constant head tank, the constant head tank at the top of baffle one (3) includes constant head tank one (8), constant head tank two (9), constant head tank three (10) and constant head tank four (11), the constant head tank at the top of baffle two (4) includes constant head tank five (12), Six (13), constant head tank seven (14) and constant head tank eight (15) of constant head tank, set-square (5) are fixed between bottom bracket (1) and baffle (3), upper portion horizontal pole (6) set up between upper portion frame (2) longitudinal frame, bottom horizontal pole (7) set up between bottom bracket (1) longitudinal frame.
2. The quartz boat for annealing IC-grade silicon wafers according to claim 1, wherein: the bottom bracket (1) is of a groove-shaped frame structure consisting of four quartz round rods, and the upper frame (2) is of a rectangular frame structure consisting of four quartz round rods.
3. The quartz boat for annealing IC-grade silicon wafers according to claim 1 or 2, wherein: the bottom bracket (1) is perpendicular to the quartz round rods at two sides of the bottom cross rod (7) and is internally provided with an inclined plane (16).
4. The quartz boat for annealing IC-grade silicon wafers according to claim 1, wherein: the upper cross rods (6) are quartz round rods and are provided with a plurality of quartz round rods, and the bottom cross rods (7) are quartz round rods.
5. The quartz boat for annealing IC-grade silicon wafers as claimed in claim 3, wherein: and the inclined plane (16) is provided with a silicon chip fixing groove (17) corresponding to the upper cross rod (6).
6. The quartz boat for annealing IC-grade silicon wafers according to claim 1, wherein: the upper frame (2) is clamped with the positioning groove.
7. The quartz boat for annealing IC-grade silicon wafers according to claim 1, wherein: the novel corner plate is characterized in that the triangular plates (5) are respectively arranged on two sides in the groove of the bottom bracket (1), the bottom ends of the triangular plates (5) are fixedly connected with quartz rods on two sides of the bottom bracket (1), the other sides of the triangular plates (5) are fixedly connected with the outer sides of the first baffle plates (3), and transverse plates (18) are arranged between the two triangular plates (5) and at the bottom ends of the two triangular plates (5).
8. The quartz boat for annealing IC-grade silicon wafers according to claim 7, wherein: the center of the transverse plate (18) is provided with a through hole (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120497174.9U CN214588767U (en) | 2021-03-09 | 2021-03-09 | Quartz boat for annealing IC-grade silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120497174.9U CN214588767U (en) | 2021-03-09 | 2021-03-09 | Quartz boat for annealing IC-grade silicon wafer |
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| Publication Number | Publication Date |
|---|---|
| CN214588767U true CN214588767U (en) | 2021-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120497174.9U Active CN214588767U (en) | 2021-03-09 | 2021-03-09 | Quartz boat for annealing IC-grade silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115116910A (en) * | 2022-07-19 | 2022-09-27 | 宁夏中欣晶圆半导体科技有限公司 | Universal horizontal quartz boat and oxidation heat treatment method for silicon wafers of different specifications simultaneously |
-
2021
- 2021-03-09 CN CN202120497174.9U patent/CN214588767U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115116910A (en) * | 2022-07-19 | 2022-09-27 | 宁夏中欣晶圆半导体科技有限公司 | Universal horizontal quartz boat and oxidation heat treatment method for silicon wafers of different specifications simultaneously |
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