CN212783471U

CN212783471U - Solar cell back electrode structure

Info

Publication number: CN212783471U
Application number: CN202021970380.9U
Authority: CN
Inventors: 刘伟; 陈筑; 蔡二辉; 刘晓巍
Original assignee: Ningbo Eureka Solar Energy Co Ltd
Current assignee: Ningbo Eureka Solar Energy Co Ltd
Priority date: 2020-09-10
Filing date: 2020-09-10
Publication date: 2021-03-23
Anticipated expiration: 2030-09-10

Abstract

The utility model relates to a crystalline silicon solar cell technical field especially relates to a solar cell back electrode structure. The silicon wafer back electrode structure comprises a plurality of rows of first back electrodes (2) printed on a silicon wafer (1), each row of first back electrodes (2) is divided into a plurality of sections, and the silicon wafer back electrode structure further comprises second back electrodes (3) arranged on the edge of the silicon wafer (1). The back electrode structure adopting the structure can conveniently judge whether the printing position is accurate or not, greatly improves the production efficiency and reduces the rework rate.

Description

Solar cell back electrode structure

Technical Field

The utility model relates to a crystalline silicon solar cell technical field especially relates to a solar cell back electrode structure.

Background

The back electrode of the solar cell and the aluminum back field are overprinted, and when the back electrode pattern and the aluminum back field pattern are integrally printed in the middle of the silicon wafer, the overprinting effect can be realized.

However, in the actual production process, the aluminum back surface field is printed on the periphery of the silicon wafer, so that whether the position is accurate or not can be conveniently judged, the back surface electrode is in a sectional type and corresponds to the main grid line, and the printed back surface electrode is far away from the edge of the silicon wafer, so that whether the position is accurate or not cannot be conveniently judged.

Disclosure of Invention

The utility model discloses the technical problem that will solve is: the utility model provides a solar cell back electrode structure, whether the back electrode structure that adopts this kind of structure can be convenient judge the printing position accurate, has improved production efficiency greatly, has reduced the rate of doing over again simultaneously.

The utility model adopts the technical proposal that: a solar cell back electrode structure comprises a plurality of rows of first back electrodes printed on a silicon wafer, each row of first back electrodes is divided into a plurality of sections, and the solar cell back electrode structure further comprises a second back electrode arranged on the edge of the silicon wafer.

Preferably, an aluminum back field is printed on the silicon wafer, and the distance from the outermost edge of the second back electrode to the edge of the silicon wafer is less than or equal to the distance from the outermost edge of the aluminum back field to the edge of the silicon wafer.

Preferably, the second back electrodes are disposed at four corners of the silicon wafer, and the second back electrodes are composed of short lines or broken lines.

Preferably, the second back electrode is parallel to the edge of the silicon chip, and the width of the second back electrode is 0.1-0.2 mm.

The width of the second back electrode is 0.15 mm.

Compared with the prior art in the structure more than adopting, the utility model has the advantages of it is following: the second back electrode is arranged at the edge of the silicon wafer, so that when the back electrode is printed, whether the whole printing position of the back electrode is accurate can be judged through the second back electrode at the edge of the silicon wafer, and the judgment is carried out after an aluminum back field is not printed, so that the production efficiency can be greatly improved, and the rework rate is reduced.

The distance from the outermost edge of the second back electrode to the edge of the silicon wafer is smaller than or equal to the distance from the outermost edge of the aluminum back field to the edge of the silicon wafer, so that the second back electrode can be covered after the aluminum back field is printed, and the appearance of the battery is not influenced.

The second back electrodes are arranged at the four corners, so that whether the printing position is accurate or not can be found more obviously.

The width of the second back electrode is made in this way, so that the waste of back silver can be reduced as much as possible.

Drawings

Fig. 1 is a schematic structural diagram of a first embodiment of the solar cell back electrode structure of the present invention.

Fig. 2 is an enlarged schematic view of a point a in fig. 1.

Fig. 3 is a schematic structural diagram of a second embodiment of the solar cell back electrode structure of the present invention.

Fig. 4 is an enlarged schematic view of fig. 3 at B.

As shown in the figure: 1. a silicon wafer; 2. a first back electrode; 3. a second back electrode.

Detailed Description

The present invention will be further described below with reference to specific embodiments, but the present invention is not limited to the following specific embodiments.

In a first specific embodiment, as shown in fig. 1 and 2, a solar cell back electrode structure includes a silicon wafer 1, a first back electrode 2, a second back electrode 3, and an aluminum back field, wherein:

the silicon wafer 1 is rectangular and is subjected to chamfering treatment;

the first back electrode 2 is provided in a plurality of rows, as in the prior art, and each row is provided with a plurality of first back electrodes, which are not detailed herein;

the second back electrode 3 is arranged at four chamfered corners, the shape is a broken line, the middle point of a broken line clock is at the chamfered corner, the second back electrode 3 is parallel to the edge of the silicon chip 1, the broken line is divided into two sections, the length of each section is 3mm-5mm, specifically 3.5mm, the width of each section is 0.1-0.2mm, and specifically 0.15 mm;

the aluminum back field is the same as the prior art, the first back electrode 2 and the second back electrode 3 are printed firstly, then the aluminum back field is printed, after the printing of the aluminum back field is finished, the first back electrode 2 leaks out, and the second back electrode 3 is completely covered;

second embodiment, as shown in fig. 3 and 4, the main difference from the first embodiment is that the shape of the silicon chip 1 is changed without chamfering, so that the second back electrode 3 is provided with a right-angled fold line at each of the four corners, and the others are the same as the first embodiment.

During printing, the first back electrode 2 and the second back electrode 3 are printed simultaneously, and whether the printing position is accurate can be judged only by observing the distance between the second back electrode 3 and the edge of the silicon wafer 1, so that the reworking frequency is reduced, and the productivity is improved.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. The utility model provides a solar cell back electrode structure, includes the first back electrode of multirow (2) of printing on silicon chip (1), and every row of first back electrode (2) divide into the multistage, its characterized in that: it also comprises a second back electrode (3) arranged at the edge of the silicon wafer (1).

2. The solar cell back electrode structure of claim 1, wherein: an aluminum back field is printed on the silicon wafer (1), and the distance from the outermost edge of the second back electrode (3) to the edge of the silicon wafer (1) is smaller than or equal to the distance from the outermost edge of the aluminum back field to the edge of the silicon wafer (1).

3. The solar cell back electrode structure of claim 1, wherein: the second back electrodes (3) are arranged at four corners of the silicon wafer (1), and the second back electrodes (3) are composed of short lines or broken lines.

4. The solar cell back electrode structure of claim 1, wherein: the second back electrode (3) is parallel to the edge of the silicon chip (1), and the width of the second back electrode (3) is 0.1-0.2 mm.

5. The solar cell back electrode structure of claim 4, wherein: the width of the second back electrode (3) is 0.15 mm.