CN115103871A - 树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件 - Google Patents

树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件 Download PDF

Info

Publication number
CN115103871A
CN115103871A CN202180013221.0A CN202180013221A CN115103871A CN 115103871 A CN115103871 A CN 115103871A CN 202180013221 A CN202180013221 A CN 202180013221A CN 115103871 A CN115103871 A CN 115103871A
Authority
CN
China
Prior art keywords
group
formula
resin composition
compound
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180013221.0A
Other languages
English (en)
Chinese (zh)
Inventor
小川伦弘
青岛俊荣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN115103871A publication Critical patent/CN115103871A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/21—Urea; Derivatives thereof, e.g. biuret
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Laminated Bodies (AREA)
  • Materials For Photolithography (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerisation Methods In General (AREA)
CN202180013221.0A 2020-02-04 2021-02-04 树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件 Pending CN115103871A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-017329 2020-02-04
JP2020017329 2020-02-04
PCT/JP2021/004054 WO2021157643A1 (ja) 2020-02-04 2021-02-04 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス

Publications (1)

Publication Number Publication Date
CN115103871A true CN115103871A (zh) 2022-09-23

Family

ID=77200677

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180013221.0A Pending CN115103871A (zh) 2020-02-04 2021-02-04 树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件

Country Status (5)

Country Link
JP (2) JP7331155B2 (https=)
KR (1) KR102766259B1 (https=)
CN (1) CN115103871A (https=)
TW (1) TWI875941B (https=)
WO (1) WO2021157643A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023112573A1 (ja) * 2021-12-14 2023-06-22 富士フイルム株式会社 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法、並びに、処理液
WO2024095885A1 (ja) * 2022-10-31 2024-05-10 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6172022A (ja) * 1984-09-14 1986-04-14 Asahi Chem Ind Co Ltd ポリアミドの製造方法
JPH01278531A (ja) * 1988-05-02 1989-11-08 Chisso Corp 感光性重合体の製造方法
JP2002131907A (ja) * 2000-10-26 2002-05-09 Asahi Kasei Corp ポリイミド前駆体組成物
JP2007206423A (ja) * 2006-02-02 2007-08-16 Asahi Kasei Electronics Co Ltd ポリアミド酸エステル組成物
JP2010285557A (ja) * 2009-06-12 2010-12-24 Teijin Ltd 環状カルボジイミドを含有する樹脂組成物
TW201410826A (zh) * 2012-06-27 2014-03-16 Henkel Corp 用於可固化組合物之加速劑
TW201815964A (zh) * 2016-08-31 2018-05-01 日商富士軟片股份有限公司 樹脂組成物及其應用
CN108137803A (zh) * 2015-12-25 2018-06-08 富士胶片株式会社 树脂、组合物、固化膜、固化膜的制造方法和半导体器件
CN108440977A (zh) * 2018-03-12 2018-08-24 长安大学 用于高模量抗车辙混凝土的改性沥青、改性剂及制备方法
WO2019003913A1 (ja) * 2017-06-30 2019-01-03 住友ベークライト株式会社 感光性樹脂組成物、樹脂膜及び電子装置
CN110325911A (zh) * 2017-02-20 2019-10-11 富士胶片株式会社 感光性树脂组合物、含杂环聚合物前体、固化膜、层叠体、固化膜的制造方法及半导体器件

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5571990B2 (ja) 2009-06-04 2014-08-13 旭化成イーマテリアルズ株式会社 ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6172022A (ja) * 1984-09-14 1986-04-14 Asahi Chem Ind Co Ltd ポリアミドの製造方法
JPH01278531A (ja) * 1988-05-02 1989-11-08 Chisso Corp 感光性重合体の製造方法
JP2002131907A (ja) * 2000-10-26 2002-05-09 Asahi Kasei Corp ポリイミド前駆体組成物
JP2007206423A (ja) * 2006-02-02 2007-08-16 Asahi Kasei Electronics Co Ltd ポリアミド酸エステル組成物
JP2010285557A (ja) * 2009-06-12 2010-12-24 Teijin Ltd 環状カルボジイミドを含有する樹脂組成物
TW201410826A (zh) * 2012-06-27 2014-03-16 Henkel Corp 用於可固化組合物之加速劑
CN108137803A (zh) * 2015-12-25 2018-06-08 富士胶片株式会社 树脂、组合物、固化膜、固化膜的制造方法和半导体器件
TW201815964A (zh) * 2016-08-31 2018-05-01 日商富士軟片股份有限公司 樹脂組成物及其應用
CN110325911A (zh) * 2017-02-20 2019-10-11 富士胶片株式会社 感光性树脂组合物、含杂环聚合物前体、固化膜、层叠体、固化膜的制造方法及半导体器件
WO2019003913A1 (ja) * 2017-06-30 2019-01-03 住友ベークライト株式会社 感光性樹脂組成物、樹脂膜及び電子装置
CN108440977A (zh) * 2018-03-12 2018-08-24 长安大学 用于高模量抗车辙混凝土的改性沥青、改性剂及制备方法

Also Published As

Publication number Publication date
JP2023159205A (ja) 2023-10-31
KR102766259B1 (ko) 2025-02-12
WO2021157643A1 (ja) 2021-08-12
JPWO2021157643A1 (https=) 2021-08-12
TWI875941B (zh) 2025-03-11
KR20220123434A (ko) 2022-09-06
JP7331155B2 (ja) 2023-08-22
TW202136375A (zh) 2021-10-01

Similar Documents

Publication Publication Date Title
KR102800736B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
CN115667404B (zh) 固化性树脂组合物、固化膜、层叠体、固化膜的制造方法及半导体器件
KR102944116B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102737898B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102828752B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
CN115038755A (zh) 固化性树脂组合物、树脂膜、固化膜、层叠体、固化膜的制造方法及半导体器件
KR102793452B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제
KR102773896B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
TW202136420A (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜之製造方法及半導體器件
KR102727376B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR20230057444A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230048124A (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
JP2023159205A (ja) 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス
KR102740154B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102836294B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102812620B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
TWI886225B (zh) 感光性樹脂組成物、硬化膜、積層體、硬化膜之製造方法、及半導體器件
KR20230052928A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230044259A (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물
KR102953362B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230054708A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230146065A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230056034A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
CN115867866A (zh) 固化物的制造方法、树脂组合物、显影液、层叠体的制造方法及半导体器件的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination