KR102766259B1 - 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스 - Google Patents

수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스 Download PDF

Info

Publication number
KR102766259B1
KR102766259B1 KR1020227026433A KR20227026433A KR102766259B1 KR 102766259 B1 KR102766259 B1 KR 102766259B1 KR 1020227026433 A KR1020227026433 A KR 1020227026433A KR 20227026433 A KR20227026433 A KR 20227026433A KR 102766259 B1 KR102766259 B1 KR 102766259B1
Authority
KR
South Korea
Prior art keywords
group
formula
preferable
resin composition
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227026433A
Other languages
English (en)
Korean (ko)
Other versions
KR20220123434A (ko
Inventor
미치히로 오가와
토시히데 아오시마
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20220123434A publication Critical patent/KR20220123434A/ko
Application granted granted Critical
Publication of KR102766259B1 publication Critical patent/KR102766259B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/21—Urea; Derivatives thereof, e.g. biuret
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H01L21/768—
    • H01L23/53295—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Laminated Bodies (AREA)
  • Materials For Photolithography (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerisation Methods In General (AREA)
KR1020227026433A 2020-02-04 2021-02-04 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스 Active KR102766259B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-017329 2020-02-04
JP2020017329 2020-02-04
PCT/JP2021/004054 WO2021157643A1 (ja) 2020-02-04 2021-02-04 樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス

Publications (2)

Publication Number Publication Date
KR20220123434A KR20220123434A (ko) 2022-09-06
KR102766259B1 true KR102766259B1 (ko) 2025-02-12

Family

ID=77200677

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227026433A Active KR102766259B1 (ko) 2020-02-04 2021-02-04 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스

Country Status (5)

Country Link
JP (2) JP7331155B2 (https=)
KR (1) KR102766259B1 (https=)
CN (1) CN115103871A (https=)
TW (1) TWI875941B (https=)
WO (1) WO2021157643A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023112573A1 (ja) * 2021-12-14 2023-06-22 富士フイルム株式会社 硬化物の製造方法、積層体の製造方法、及び、半導体デバイスの製造方法、並びに、処理液
WO2024095885A1 (ja) * 2022-10-31 2024-05-10 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002131907A (ja) * 2000-10-26 2002-05-09 Asahi Kasei Corp ポリイミド前駆体組成物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6172022A (ja) * 1984-09-14 1986-04-14 Asahi Chem Ind Co Ltd ポリアミドの製造方法
JPH0749483B2 (ja) * 1988-05-02 1995-05-31 チッソ株式会社 感光性重合体の製造方法
JP4761989B2 (ja) * 2006-02-02 2011-08-31 旭化成イーマテリアルズ株式会社 ポリアミド酸エステル組成物
JP5571990B2 (ja) 2009-06-04 2014-08-13 旭化成イーマテリアルズ株式会社 ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置
JP5588631B2 (ja) * 2009-06-12 2014-09-10 帝人株式会社 環状カルボジイミドを含有する樹脂組成物
US9365750B2 (en) * 2012-06-27 2016-06-14 Henkel IP & Holding GmbH Accelerators for curable compositions
TWI634135B (zh) * 2015-12-25 2018-09-01 日商富士軟片股份有限公司 樹脂、組成物、硬化膜、硬化膜的製造方法及半導體元件
WO2018043467A1 (ja) * 2016-08-31 2018-03-08 富士フイルム株式会社 樹脂組成物およびその応用
TWI758415B (zh) * 2017-02-20 2022-03-21 日商富士軟片股份有限公司 感光性樹脂組成物、含雜環聚合物前體、硬化膜、積層體、硬化膜的製造方法及半導體裝置
JP6566150B2 (ja) * 2017-06-30 2019-08-28 住友ベークライト株式会社 感光性樹脂組成物、樹脂膜及び電子装置
CN108440977B (zh) * 2018-03-12 2020-06-30 长安大学 用于高模量抗车辙混凝土的改性沥青、改性剂及制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002131907A (ja) * 2000-10-26 2002-05-09 Asahi Kasei Corp ポリイミド前駆体組成物

Also Published As

Publication number Publication date
JP2023159205A (ja) 2023-10-31
WO2021157643A1 (ja) 2021-08-12
JPWO2021157643A1 (https=) 2021-08-12
CN115103871A (zh) 2022-09-23
TWI875941B (zh) 2025-03-11
KR20220123434A (ko) 2022-09-06
JP7331155B2 (ja) 2023-08-22
TW202136375A (zh) 2021-10-01

Similar Documents

Publication Publication Date Title
KR102834198B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102800736B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102828752B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102648552B1 (ko) 경화막의 제조 방법, 광경화성 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102737898B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102871890B1 (ko) 경화성 수지 조성물, 수지막, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102944116B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102773896B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102793452B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제
KR20230004846A (ko) 감광성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102727376B1 (ko) 경화성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102796438B1 (ko) 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102857827B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20220086621A (ko) 패턴 형성 방법, 광경화성 수지 조성물, 적층체의 제조 방법, 및, 전자 디바이스의 제조 방법
KR20220052342A (ko) 패턴 형성 방법, 감광성 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102827423B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102766259B1 (ko) 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및, 반도체 디바이스
KR102875352B1 (ko) 영구막의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102740154B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102836294B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102812620B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230044259A (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물
TW202140621A (zh) 感光性樹脂組成物、硬化膜、積層體、硬化膜之製造方法、及半導體器件
KR102800738B1 (ko) 수지 조성물 및 그 제조 방법 및 패턴 형성용 조성물의 제조 방법
KR102953362B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000