CN115084146A - 基板、打印装置和制造方法 - Google Patents

基板、打印装置和制造方法 Download PDF

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Publication number
CN115084146A
CN115084146A CN202210213985.0A CN202210213985A CN115084146A CN 115084146 A CN115084146 A CN 115084146A CN 202210213985 A CN202210213985 A CN 202210213985A CN 115084146 A CN115084146 A CN 115084146A
Authority
CN
China
Prior art keywords
wiring
voltage
substrate
electrode pad
predetermined voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210213985.0A
Other languages
English (en)
Chinese (zh)
Inventor
福田正志
根岸俊雄
添田康宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN115084146A publication Critical patent/CN115084146A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J3/00—Typewriters or selective printing or marking mechanisms characterised by the purpose for which they are constructed
    • B41J3/407—Typewriters or selective printing or marking mechanisms characterised by the purpose for which they are constructed for marking on special material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN202210213985.0A 2021-03-10 2022-03-07 基板、打印装置和制造方法 Pending CN115084146A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021038579A JP7623857B2 (ja) 2021-03-10 2021-03-10 基板、記録装置及び製造方法
JP2021-038579 2021-03-10

Publications (1)

Publication Number Publication Date
CN115084146A true CN115084146A (zh) 2022-09-20

Family

ID=83194014

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210213985.0A Pending CN115084146A (zh) 2021-03-10 2022-03-07 基板、打印装置和制造方法

Country Status (3)

Country Link
US (1) US11837301B2 (https=)
JP (1) JP7623857B2 (https=)
CN (1) CN115084146A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7781010B2 (ja) * 2022-03-30 2025-12-05 キヤノン株式会社 記憶装置、液体吐出ヘッドおよび液体吐出装置
JP7799655B2 (ja) 2023-06-02 2026-01-15 キヤノン株式会社 半導体装置及びインクジェット記録素子基板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3529635B2 (ja) * 1998-08-06 2004-05-24 日本電信電話株式会社 自己破壊型半導体装置
JP4946260B2 (ja) 2006-08-16 2012-06-06 富士通セミコンダクター株式会社 アンチヒューズ書込電圧発生回路を内蔵する半導体メモリ装置
JP5791294B2 (ja) 2011-02-11 2015-10-07 キヤノン株式会社 静電容量型電気機械変換装置
JP2013251804A (ja) 2012-06-01 2013-12-12 Canon Inc 測定装置の駆動装置、及び駆動方法
FR3025927B1 (fr) * 2014-09-12 2018-01-12 St Microelectronics Sa Programmation de cellules anti-fusibles
JP6789729B2 (ja) * 2016-08-31 2020-11-25 キヤノン株式会社 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置
JP6827740B2 (ja) * 2016-08-31 2021-02-10 キヤノン株式会社 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置
JP6622745B2 (ja) * 2017-03-30 2019-12-18 キヤノン株式会社 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置

Also Published As

Publication number Publication date
JP2022138607A (ja) 2022-09-26
US11837301B2 (en) 2023-12-05
US20220293200A1 (en) 2022-09-15
JP7623857B2 (ja) 2025-01-29

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