JP4824780B2 - プリントヘッド用のゲート結合epromセル - Google Patents
プリントヘッド用のゲート結合epromセル Download PDFInfo
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- JP4824780B2 JP4824780B2 JP2008556554A JP2008556554A JP4824780B2 JP 4824780 B2 JP4824780 B2 JP 4824780B2 JP 2008556554 A JP2008556554 A JP 2008556554A JP 2008556554 A JP2008556554 A JP 2008556554A JP 4824780 B2 JP4824780 B2 JP 4824780B2
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
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- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04541—Specific driving circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04543—Block driving
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0455—Details of switching sections of circuit, e.g. transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/10—Floating gate memory cells with a single polysilicon layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Description
インクジェット印刷システムは、流体吐出デバイスのうちの1つのタイプであり、プリントヘッドと、インク供給部と、該プリントヘッドを制御する電子コントローラとを備える。該プリントヘッドは、気化チャンバ内に位置付けられた少量のインクを急速に加熱することによって、チップ(ダイ)内に配置されたオリフィス又はノズルのアレイを通じて液体インク滴を吐出する。該インクは、薄膜抵抗器又は発射抵抗器(ファイヤリングレジスタ)のような、小さな電気ヒータによって加熱させられる。該インクを加熱することによって、その液体インクの一部が気化され、それにより、一滴がノズルを通じて、一枚の紙等の印刷媒体のシートに向かって吐出させられて、ある画像が印刷される。インクノズルは、典型的には、プリントヘッドダイ内における1つか又は複数のアレイに配置される。それにより、プリントヘッドが印刷媒体を走査すると、ノズルからのインクの適切に順序付けられた吐出によって、文字か又は他の画像が印刷させられることとなる。
図面内に示された例示的な実施形態に対して、次に参照がなされることとなり、それらを説明するために、本明細書内において特定の用語が用いられることになる。しかしながら、それによって本発明の範囲が限定されないことが意図されていることを理解されたい。当業者であれば考えつくであろう、且つ、本開示の財産を有している、本明細書内において説明される本発明の特徴の改変及び更なる修正と、本明細書内において説明されるような本発明の原理の追加的なアプリケーションとは、本発明の範囲内と見なされるべきである。
Claims (7)
- インクジェットプリンタのためのプリントヘッド制御回路内のEPROMセルであって、該プリントヘッド制御回路が、半導体基板と、該半導体基板上に配置された唯一のポリシリコン層と、該ポリシリコン層上に配置された導電層とを有し、該EPROMセルが、
前記ポリシリコン層の一部を含むフローティングゲートと、ドレイン接続部と、ソース接続部とを有する制御トランジスタと、
前記ポリシリコン層の一部を含むフローティングゲートと、ドレイン接続部とを有するEPROMトランジスタと、
前記導電層の一部を含み、前記制御トランジスタの前記フローティングゲートと、前記EPROMトランジスタの前記フローティングゲートとを相互接続する、電気的相互接続部と、
前記制御トランジスタの前記ソース接続部と、前記EPROMトランジスタの前記ドレイン接続部との間の電気的相互接続部
とを備えることからなる、EPROMセル。 - 前記制御トランジスタの前記ドレイン接続部と前記ソース接続部との間に電気的相互接続部を更に備える、請求項1に記載のEPROMセル。
- 前記制御トランジスタの前記ドレイン接続部と前記ソース接続部との間の前記電気的相互接続部が、抵抗を含むことからなる、請求項2に記載のEPROMセル。
- 前記制御トランジスタの前記ソース接続部と、前記EPROMトランジスタの前記ドレイン接続部との間の前記電気的相互接続が、抵抗を含むことからなる、請求項1乃至3の何れかに記載のEPROMセル。
- 前記EPROMトランジスタの前記フローティングゲートに加えられるプログラミング電荷は累積されるため、前記EPROMセルを連続的に充電して、累積値を格納することが可能である、請求項1乃至4の何れかに記載のEPROMセル。
- 前記EPROMトランジスタが、ソース接続部を備え、前記EPROMセルが、前記制御トランジスタの前記ドレイン接続部に接続された入力線を更に備え、それにより、前記EPROMトランジスタにプログラミング信号を提供することが可能であることからなる、請求項1乃至5に記載のEPROMセル。
- 前記EPROMトランジスタの前記ソース接続部に接続されたドレイン接続部を有する駆動トランジスタを更に備え、該駆動トランジスタのゲートが、発射セルのアレイのプリチャージ線、選択線、及びデータ線に関連付けられており、それにより、前記入力線を通じて、及び前記プリチャージ線、前記選択線、及び前記データ線を通じて送られた信号によって、前記EPROMセルのプログラミングと読み出しとを制御することが可能であることからなる、請求項6に記載のEPROMセル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/360,801 US7365387B2 (en) | 2006-02-23 | 2006-02-23 | Gate-coupled EPROM cell for printhead |
US11/360,801 | 2006-02-23 | ||
PCT/US2007/062644 WO2007120988A2 (en) | 2006-02-23 | 2007-02-23 | Gate-coupled eprom cell for printhead |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009528183A JP2009528183A (ja) | 2009-08-06 |
JP4824780B2 true JP4824780B2 (ja) | 2011-11-30 |
Family
ID=38427316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008556554A Active JP4824780B2 (ja) | 2006-02-23 | 2007-02-23 | プリントヘッド用のゲート結合epromセル |
Country Status (11)
Country | Link |
---|---|
US (1) | US7365387B2 (ja) |
EP (1) | EP1994553B1 (ja) |
JP (1) | JP4824780B2 (ja) |
KR (1) | KR101313389B1 (ja) |
CN (1) | CN101390196B (ja) |
AU (1) | AU2007238482B2 (ja) |
BR (1) | BRPI0707017B1 (ja) |
CA (1) | CA2641471C (ja) |
ES (1) | ES2897827T3 (ja) |
PL (1) | PL1994553T3 (ja) |
WO (1) | WO2007120988A2 (ja) |
Families Citing this family (36)
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US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US7782668B2 (en) * | 2007-11-01 | 2010-08-24 | Jonker Llc | Integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory |
US7787295B2 (en) * | 2007-11-14 | 2010-08-31 | Jonker Llc | Integrated circuit embedded with non-volatile multiple-time programmable memory having variable coupling |
US8580622B2 (en) | 2007-11-14 | 2013-11-12 | Invensas Corporation | Method of making integrated circuit embedded with non-volatile programmable memory having variable coupling |
US7876615B2 (en) | 2007-11-14 | 2011-01-25 | Jonker Llc | Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data |
CN101903179B (zh) * | 2007-12-19 | 2013-09-25 | 惠普开发有限公司 | 基板上的熔丝腔 |
WO2009082391A1 (en) * | 2007-12-20 | 2009-07-02 | Hewlett-Packard Development Company, L.P. | Droplet generator |
US8460947B2 (en) | 2008-09-24 | 2013-06-11 | Hewlett-Packard Development Company, L.P. | Fluid ejection device and method |
US7815287B2 (en) * | 2008-09-24 | 2010-10-19 | Hewlett-Packard Development Company, L.P. | Fluid ejection device and method |
US8305805B2 (en) * | 2008-11-03 | 2012-11-06 | Invensas Corporation | Common drain non-volatile multiple-time programmable memory |
US7750694B1 (en) * | 2008-11-11 | 2010-07-06 | Altera Corporation | Power on reset circuitry for manufacturability and security using a fuse |
US8203861B2 (en) | 2008-12-30 | 2012-06-19 | Invensas Corporation | Non-volatile one-time—programmable and multiple-time programmable memory configuration circuit |
KR101068571B1 (ko) * | 2009-07-03 | 2011-09-30 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US8988103B2 (en) | 2010-09-15 | 2015-03-24 | David K. Y. Liu | Capacitively coupled logic gate |
WO2012154973A1 (en) | 2011-05-10 | 2012-11-15 | Jonker, Llc | Zero cost nvm cell using high voltage devices in analog process |
US8477539B2 (en) * | 2011-07-15 | 2013-07-02 | Vangaurd International Semiconductor Corporation | Non-volatile memory cell and methods for programming, erasing and reading thereof |
EP2761656A4 (en) * | 2011-09-27 | 2015-06-24 | Hewlett Packard Development Co | CIRCUIT SELECTING MEMORIES EPROM INDIVIDUALLY AND IN PARALLEL |
EP2814669B1 (en) | 2012-04-19 | 2020-10-21 | Hewlett-Packard Development Company, L.P. | Detecting a drive bubble formation and collapse |
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EP1994553A2 (en) | 2008-11-26 |
CN101390196A (zh) | 2009-03-18 |
US7365387B2 (en) | 2008-04-29 |
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AU2007238482A1 (en) | 2007-10-25 |
JP2009528183A (ja) | 2009-08-06 |
WO2007120988A2 (en) | 2007-10-25 |
CA2641471C (en) | 2015-08-18 |
BRPI0707017B1 (pt) | 2022-09-27 |
PL1994553T3 (pl) | 2021-12-20 |
ES2897827T3 (es) | 2022-03-02 |
WO2007120988A3 (en) | 2008-04-10 |
US20070194371A1 (en) | 2007-08-23 |
KR101313389B1 (ko) | 2013-10-01 |
CA2641471A1 (en) | 2007-10-25 |
AU2007238482B2 (en) | 2011-08-18 |
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KR20080106909A (ko) | 2008-12-09 |
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