JP6789729B2 - 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 - Google Patents
半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 Download PDFInfo
- Publication number
- JP6789729B2 JP6789729B2 JP2016169618A JP2016169618A JP6789729B2 JP 6789729 B2 JP6789729 B2 JP 6789729B2 JP 2016169618 A JP2016169618 A JP 2016169618A JP 2016169618 A JP2016169618 A JP 2016169618A JP 6789729 B2 JP6789729 B2 JP 6789729B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- resistance
- liquid discharge
- fuse element
- discharge head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007788 liquid Substances 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 title claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 18
- 230000006870 function Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 101100091046 Caenorhabditis elegans rmd-1 gene Proteins 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04541—Specific driving circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04543—Block driving
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/1433—Structure of nozzle plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14491—Electrical connection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1は、本発明の第1の実施の形態である半導体装置の回路構成の一例であり、アンチヒューズ素子に情報が書込まれる前の状態を示している。
アンチヒューズ素子11が書込まれる前の、ノードN1とN2の間の合成抵抗Rcom0は、下記式(1)で表される。
Rcom0=Rrp+R2+Rmd1 式(1)
本実施の形態では、実施の形態1に記載の半導体装置の適用例として、半導体装置を液体吐出装置に適用した例について説明する。
本実施の形態では、実施の形態1の半導体装置、または実施の形態2の液体吐出ヘッド用基板を液体吐出装置に搭載した例について、図9を参照して、インクジェット記録方式のものを例示して説明する。しかし、液体吐出装置はこの形態には限定されず、例えば、溶融型や昇華型等の熱転写方式の液体吐出装置についても同様である。
11 アンチヒューズ素子
Rp 抵抗素子
Claims (10)
- 第1電位の端子に接続されたトランジスタと、
前記トランジスタと、前記第1電位と異なる第2電位の端子の間に接続されたアンチヒューズ素子と、
前記アンチヒューズ素子と並列に接続された抵抗素子と、
を有し、
前記トランジスタと前記アンチヒューズ素子とを接続する配線の抵抗が、前記トランジスタと前記抵抗素子とを接続する配線の抵抗より小さいことを特徴とする半導体装置。 - 前記トランジスタと前記アンチヒューズ素子とを接続する前記配線の長さが、前記トランジスタと前記抵抗素子とを接続する前記配線の長さより小さいことを特徴とする請求項1に記載の半導体装置。
- 前記トランジスタのチャネル形成領域は半導体基板に形成され、
前記抵抗素子は、前記半導体基板に形成された半導体領域を有することを特徴とする請求項1または2に記載の半導体装置。 - 前記アンチヒューズ素子はMOS構造を有し、前記MOS構造のゲート絶縁膜を絶縁破壊することによって情報が書き込まれるように構成されている請求項1乃至3のいずれか1項に記載の半導体装置。
- 液体を吐出するための複数の吐出用素子と、
前記複数の吐出用素子と電気的に接続された制御回路と、
前記制御回路と電気的に接続された請求項1乃至4のいずれか1項に記載の半導体装置と、を有する液体吐出ヘッド用基板。 - 前記複数の吐出用素子が第1方向に並んで配されることを特徴とする請求項5に記載の液体吐出ヘッド用基板。
- 前記抵抗素子は、前記第1方向と交差する第2方向が長手方向となる形状を有することを特徴とする請求項6に記載の液体吐出ヘッド用基板。
- 前記吐出用素子は、ヒータであることを特徴とする請求項5乃至7のいずれか1項に記載の液体吐出ヘッド用基板。
- 請求項5乃至8のいずれか1項に記載の液体吐出ヘッド用基板と、
前記液体吐出ヘッド用基板の前記複数の吐出用素子のそれぞれ異なる1つに対応するように配された複数の吐出口と、を有する記録部と、
前記記録部に取り付けられたインク容器と、
を有する液体吐出ヘッド。 - 請求項9に記載の液体吐出ヘッドと、
前記液体吐出ヘッドが搭載されるキャリッジと、
前記キャリッジを移動するためのガイドと、
を有する液体吐出装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016169618A JP6789729B2 (ja) | 2016-08-31 | 2016-08-31 | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 |
CN201710748982.6A CN107799153B (zh) | 2016-08-31 | 2017-08-28 | 半导体器件、排液头基板、排液头以及排液设备 |
US15/689,823 US10147720B2 (en) | 2016-08-31 | 2017-08-29 | Semiconductor device, liquid-discharge head substrate, liquid-discharge head, and liquid-discharge device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016169618A JP6789729B2 (ja) | 2016-08-31 | 2016-08-31 | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018037529A JP2018037529A (ja) | 2018-03-08 |
JP6789729B2 true JP6789729B2 (ja) | 2020-11-25 |
Family
ID=61243456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016169618A Active JP6789729B2 (ja) | 2016-08-31 | 2016-08-31 | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10147720B2 (ja) |
JP (1) | JP6789729B2 (ja) |
CN (1) | CN107799153B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11020966B2 (en) | 2018-04-27 | 2021-06-01 | Canon Kabushiki Kaisha | Liquid ejection head substrate, method of manufacturing liquid ejection head substrate, and liquid ejection head |
US20220037312A1 (en) * | 2020-07-29 | 2022-02-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit device, method, layout, and system |
JP2022128224A (ja) * | 2021-02-22 | 2022-09-01 | キヤノン株式会社 | 素子基板、液体吐出ヘッドおよび液体吐出装置 |
CN116013376B (zh) * | 2023-03-27 | 2023-08-04 | 长鑫存储技术有限公司 | 存储器版图及存储器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3923982B2 (ja) * | 2005-01-12 | 2007-06-06 | 株式会社東芝 | 半導体集積回路 |
CN100438020C (zh) * | 2005-09-13 | 2008-11-26 | 联华电子股份有限公司 | 半导体元件的熔丝 |
CN102171812B (zh) * | 2008-10-02 | 2014-02-12 | 株式会社半导体能源研究所 | 半导体器件 |
US8400860B2 (en) * | 2010-07-20 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse memory |
US8507326B2 (en) * | 2011-09-14 | 2013-08-13 | Globalfoundries Inc. | BEOL anti-fuse structures for gate last semiconductor devices |
JP5981815B2 (ja) | 2012-09-18 | 2016-08-31 | キヤノン株式会社 | 記録ヘッド用基板及び記録装置 |
-
2016
- 2016-08-31 JP JP2016169618A patent/JP6789729B2/ja active Active
-
2017
- 2017-08-28 CN CN201710748982.6A patent/CN107799153B/zh active Active
- 2017-08-29 US US15/689,823 patent/US10147720B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180061826A1 (en) | 2018-03-01 |
JP2018037529A (ja) | 2018-03-08 |
CN107799153B (zh) | 2021-10-22 |
CN107799153A (zh) | 2018-03-13 |
US10147720B2 (en) | 2018-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6622745B2 (ja) | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 | |
US10226921B2 (en) | Printhead substrate and printing apparatus | |
JP6789729B2 (ja) | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 | |
JP6843648B2 (ja) | 半導体基板、液体吐出ヘッド及び記録装置 | |
JP6827740B2 (ja) | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 | |
JP6843649B2 (ja) | 記録素子基板、液体吐出ヘッド及び記録装置 | |
KR20060065556A (ko) | 잉크젯 기록 헤드용 기판 및 구동 제어 방법, 잉크젯 기록헤드, 잉크젯 기록 헤드 카트리지 및 잉크젯 기록 장치 | |
US9895879B2 (en) | Semiconductor device and recording device | |
US7988260B2 (en) | Recording element substrate and recording head including recording element substrate | |
CN100434276C (zh) | 具有高效逻辑和驱动电路的微流体喷出装置 | |
US8777356B2 (en) | Fluid discharge head semiconductor device, fluid discharge head, and fluid discharge apparatus | |
JP6470858B2 (ja) | 基板、液体吐出ヘッドおよび液体吐出装置 | |
JP6302513B2 (ja) | 記録ヘッド用基板及び記録装置 | |
US11837301B2 (en) | Substrate, printing apparatus, and manufacturing method | |
CN115071269A (zh) | 半导体装置、排液头和排液设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190821 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200721 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200918 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201006 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201104 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6789729 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |