CN115072723B - 一种溶胶凝胶法制备纳米碳化硅的方法 - Google Patents
一种溶胶凝胶法制备纳米碳化硅的方法 Download PDFInfo
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- CN115072723B CN115072723B CN202210841699.9A CN202210841699A CN115072723B CN 115072723 B CN115072723 B CN 115072723B CN 202210841699 A CN202210841699 A CN 202210841699A CN 115072723 B CN115072723 B CN 115072723B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 20
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 11
- 238000003980 solgel method Methods 0.000 title claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000003756 stirring Methods 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 14
- 239000008103 glucose Substances 0.000 claims abstract description 14
- 238000001354 calcination Methods 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000002904 solvent Substances 0.000 claims abstract description 4
- 150000007522 mineralic acids Chemical class 0.000 claims abstract 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 39
- 230000000630 rising effect Effects 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 11
- 235000006408 oxalic acid Nutrition 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 231100000053 low toxicity Toxicity 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 25
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 11
- 229960001031 glucose Drugs 0.000 description 11
- 229910021642 ultra pure water Inorganic materials 0.000 description 11
- 239000012498 ultrapure water Substances 0.000 description 11
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003837 high-temperature calcination Methods 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000013370 mesoporous silicon carbide Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000003836 solid-state method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
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CN202210841699.9A CN115072723B (zh) | 2022-07-18 | 2022-07-18 | 一种溶胶凝胶法制备纳米碳化硅的方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1401564A (zh) * | 2002-08-19 | 2003-03-12 | 中国科学院山西煤炭化学研究所 | 一种碳化硅介孔材料及其制备方法 |
KR20100128777A (ko) * | 2009-05-29 | 2010-12-08 | 한국과학기술연구원 | 졸-젤 공정으로 제조된 탄화규소/카본/실리카 복합분말과, 이 복합분말을 사용한 고순도 및 고강도의 반응소결 탄화규소의 제조방법 |
CN102432013A (zh) * | 2011-10-08 | 2012-05-02 | 中国科学院山西煤炭化学研究所 | 一种β-纳米碳化硅的制备方法 |
CN102674354A (zh) * | 2012-05-11 | 2012-09-19 | 南京工业大学 | 一种介孔碳化硅材料的制备方法 |
KR101448241B1 (ko) * | 2014-03-27 | 2014-10-13 | (주)단단 | 고순도 탄화규소 분말 제조용 조성물 및 이를 이용한 고순도 탄화규소의 제조방법 |
CN106629732A (zh) * | 2016-11-08 | 2017-05-10 | 西安科技大学 | 一种纳米ZrC‑SiC复合粉体的制备方法 |
CN109607540A (zh) * | 2019-01-31 | 2019-04-12 | 杭州致德新材料有限公司 | 利用溶胶凝胶法制备纳米碳化硅的工艺 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101678622B1 (ko) * | 2015-09-21 | 2016-11-23 | 한국과학기술연구원 | 이산화규소-카본 다공질 복합체와 이를 이용한 고순도 과립 β-상 탄화규소 분말의 제조방법 |
-
2022
- 2022-07-18 CN CN202210841699.9A patent/CN115072723B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1401564A (zh) * | 2002-08-19 | 2003-03-12 | 中国科学院山西煤炭化学研究所 | 一种碳化硅介孔材料及其制备方法 |
KR20100128777A (ko) * | 2009-05-29 | 2010-12-08 | 한국과학기술연구원 | 졸-젤 공정으로 제조된 탄화규소/카본/실리카 복합분말과, 이 복합분말을 사용한 고순도 및 고강도의 반응소결 탄화규소의 제조방법 |
CN102432013A (zh) * | 2011-10-08 | 2012-05-02 | 中国科学院山西煤炭化学研究所 | 一种β-纳米碳化硅的制备方法 |
CN102674354A (zh) * | 2012-05-11 | 2012-09-19 | 南京工业大学 | 一种介孔碳化硅材料的制备方法 |
KR101448241B1 (ko) * | 2014-03-27 | 2014-10-13 | (주)단단 | 고순도 탄화규소 분말 제조용 조성물 및 이를 이용한 고순도 탄화규소의 제조방법 |
CN106629732A (zh) * | 2016-11-08 | 2017-05-10 | 西安科技大学 | 一种纳米ZrC‑SiC复合粉体的制备方法 |
CN109607540A (zh) * | 2019-01-31 | 2019-04-12 | 杭州致德新材料有限公司 | 利用溶胶凝胶法制备纳米碳化硅的工艺 |
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Effective date of registration: 20240912 Address after: B1-1601, Building B2, Guangming Science and Technology Park, Investment Promotion Bureau, Fenghuang Community, Fenghuang Street, Guangming District, Shenzhen City, Guangdong Province, China 518132 Patentee after: Shenzhen Shanmei High Tech Research Institute Co.,Ltd. Country or region after: China Address before: No.166, Shenzhou seventh Road, Xi'an space base, Shaanxi 710100 Patentee before: SHAANXI COAL AND CHEMICAL TECHNOLOGY INSTITUTE Co.,Ltd. Country or region before: China |
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