CN115032430A

CN115032430A - Probe structure and manufacturing method thereof

Info

Publication number: CN115032430A
Application number: CN202210635765.7A
Authority: CN
Inventors: 孔建业
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2022-06-07
Filing date: 2022-06-07
Publication date: 2022-09-09
Anticipated expiration: 2042-06-07

Abstract

The present disclosure provides a probe structure and a method of fabricating the same. The probe structure includes: two insulating connecting parts which are arranged at intervals; the plurality of conductive parts are arranged on the same side of the two insulating connecting parts, the plurality of conductive parts are arranged at intervals along a first direction, each conductive part in the plurality of conductive parts extends along a second direction, and the first direction is crossed with the second direction; the probes are arranged on one sides, far away from the two insulation connecting parts, of the conductive parts in a one-to-one correspondence mode, and the probes are located between the two insulation connecting parts. Through the interval of rationally setting up above-mentioned a plurality of conductive parts, can reduce the counterpoint degree of difficulty of probe and weld pad that is located above that, simultaneously through the horizontal distance between two above-mentioned insulating connecting portions of reasonable setting and the probe to the pressure of applying on above-mentioned two insulating connecting portions of reasonable control in the test process can realize the regulation to syringe needle pressure, makes syringe needle pressure satisfy the demand that the wafer detected, and then has improved the efficiency and the degree of accuracy that the wafer detected.

Description

Probe structure and manufacturing method thereof

Technical Field

The disclosure relates to the technical field of wafer detection, in particular to a probe structure and a manufacturing method thereof.

Background

Before the wafer is packaged into a complete chip, the wafer needs to be tested to screen out bad wafers, so that the packaging cost is reduced. The tester is used for testing the electrical performance of the unpackaged wafer. The testing machine comprises a carrying platform and a probe card. The carrying platform is used for carrying the wafer. The probe card is an interface for connecting the tester to the wafer. The probe card is provided with a plurality of probes, and the probes are simultaneously in direct contact with a plurality of test PADs (PADs) on the wafer to transmit electric signals. A test instrument on the tester sends electrical signals to the wafer through probes on the probe card and receives the returned electrical signals, which are then analyzed to determine the electrical properties of the wafer.

However, as the manufacturing process nodes of the semiconductor wafer are continuously reduced, the designed scribe lines are narrower and narrower, and the area of the test PAD corresponding to the test probe is smaller and smaller, which results in a large alignment difficulty between the probe card and the wafer, and affects the efficiency and accuracy of wafer inspection.

Disclosure of Invention

The main objective of the present disclosure is to provide a probe structure and a method for manufacturing the same, which can be adapted to a small-area PAD for testing, reduce the alignment difficulty, and improve the efficiency and accuracy of wafer detection.

According to an aspect of the present disclosure, there is provided a probe structure including: two insulating connecting parts arranged at intervals; the plurality of conductive parts are arranged on the same side of the two insulating connecting parts, the plurality of conductive parts are arranged at intervals along a first direction, each conductive part in the plurality of conductive parts extends along a second direction, and the first direction is crossed with the second direction; the probes are arranged on one sides, far away from the two insulation connecting parts, of the conductive parts in a one-to-one correspondence mode, and the probes are located between the two insulation connecting parts.

Alternatively, adjacent ones of the plurality of conductive portions are arranged at equal intervals.

Optionally, the width of each conductive portion in the first direction is the same.

Optionally, each conductive portion has the same shape.

Optionally, the first direction is perpendicular to the second direction.

Optionally, each conductive portion comprises a first conductive segment, a second conductive segment and a third conductive segment connected in sequence, wherein one of the two insulated connections is connected to a first mounting face of the first conductive segment and the other of the two insulated connections is connected to a second mounting face of the third conductive segment, the first conductive segment has a first surface opposite the first mounting face, the third conductive segment has a second surface opposite the second mounting face, the first and second surfaces are located in a first horizontal plane, the second conductive segment has a third mounting face on which the probe is located, and the third mounting face is located in a second horizontal plane parallel to the first horizontal plane.

Optionally, the probe is disposed in a middle of the third mounting surface in the second direction.

Optionally, the two insulating connecting portions have the same shape.

Optionally, each conductive portion is a metal foil structure.

Optionally, the support frame is further included, and the support frame is connected to the insulating connecting portion, and the conductive portion is connected to the support frame through the insulating connecting portion.

Optionally, the supporting frame is disposed around the outer periphery of the plurality of conductive portions.

According to another aspect of the present disclosure, a method for manufacturing the probe structure is provided, which includes the following steps: forming a plurality of conductive parts, wherein the plurality of conductive parts are arranged at intervals along a first direction, each conductive part in the plurality of conductive parts extends along a second direction, and the first direction is crossed with the second direction; two insulating connecting parts which are arranged at intervals are arranged on the same side of the conductive parts; a plurality of probes are arranged on one sides, far away from the two insulation connecting parts, of the conductive parts in a one-to-one correspondence mode, and the probes are located between the two insulation connecting parts.

Optionally, forming a plurality of conductive portions comprises: providing a metal foil; the metal foil is etched to form a plurality of conductive portions arranged at equal intervals.

Optionally, forming a plurality of conductive portions further comprises: and etching the metal foil to form a support frame surrounding the plurality of conductive parts while forming the plurality of conductive parts.

Optionally, a soldering process is used to dispose the plurality of probes on the plurality of conductive portions in a one-to-one correspondence.

The probe structure provided by the embodiment of the disclosure comprises two insulation connection parts, a plurality of conductive parts and a plurality of probes, wherein the plurality of conductive parts are arranged on the same side of the two insulation connection parts and are arranged at intervals along a first direction, each conductive part of the plurality of conductive parts extends along a second direction, the first direction is crossed with the second direction, the probes are arranged on one side of the conductive part away from the two insulation connection parts in a one-to-one correspondence manner, and the plurality of probes are positioned between the two insulation connection parts, so that the alignment difficulty between the probes and the bonding pads positioned on the conductive parts can be reduced by reasonably arranging the intervals of the plurality of conductive parts under the condition that the area of the bonding pads on a wafer is small and dense, meanwhile, as the probe structure also comprises the two insulation connection parts, a force arm can be formed between the probes and the insulation connection parts, and by reasonably arranging the horizontal distance between the two insulation connection parts and the probes, meanwhile, the pressure applied to the two insulation connecting parts is reasonably controlled in the test process, so that the pressure of the needle head can be adjusted, the pressure of the needle head meets the requirement of wafer detection, and the efficiency and the accuracy of wafer detection are improved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the disclosure, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure and are not to limit the disclosure. In the drawings:

fig. 1 illustrates a schematic top view of a probe structure provided according to an embodiment of the present disclosure;

FIG. 2 is a side view of the probe structure of FIG. 1

Fig. 3 is a schematic top-view structural diagram illustrating a plurality of conductive portions formed in a method for manufacturing a probe structure according to an embodiment of the disclosure;

fig. 4 is a schematic top view of the base after the support frame is formed simultaneously with the formation of the plurality of conductive portions shown in fig. 3;

fig. 5 is a schematic top view of the substrate after two insulating connecting parts are disposed on the same side of the plurality of conductive parts shown in fig. 4;

fig. 6 is a schematic top view showing a structure of a substrate after a plurality of probes are provided on the sides of the plurality of conductive parts away from the two insulating connection parts, respectively, shown in fig. 5;

fig. 7 shows a schematic diagram of a wafer test using the probe structure according to an embodiment of the disclosure.

Wherein the figures include the following reference numerals:

10. an insulating connection portion; 101. a first mounting surface; 102. a second mounting surface; 103. a third mounting surface; 110. a first conductive segment; 120. a second conductive segment; 130. a third conductive segment; 20. a conductive portion; 30. a probe; 40. a support frame; 100. a base; 200. a wafer; 300. and (3) probe structure.

Detailed Description

It should be noted that, in the present disclosure, the embodiments and features of the embodiments may be combined with each other without conflict. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.

In order to make the technical solutions of the present disclosure better understood by those skilled in the art, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only some embodiments of the present disclosure, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.

It should be noted that the terms "first," "second," and the like in the description and claims of the present disclosure and in the above-described drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the present disclosure may be described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

As the integration degree of semiconductor devices increases and miniaturization thereof progresses, the pitch of test pads decreases, and probe cards also become smaller and miniaturized accordingly. To be better suited for fine pitch of the wafer, the structure of the probe card needs to be further optimized currently.

In one embodiment of the present disclosure, a probe structure is proposed, as shown in fig. 1 and 2, including two insulating connection portions 10, a plurality of conductive portions 20, and a plurality of probes 30, wherein: the two insulating connecting parts 10 extend along a first direction and are arranged at intervals along a second direction; a plurality of conductive parts 20 disposed on the same side of the two insulated connecting parts 10, the plurality of conductive parts 20 being disposed at intervals along a first direction, and each conductive part 20 of the plurality of conductive parts 20 extending along a second direction, the first direction intersecting the second direction; the probes 30 are disposed on one side of the conductive portions 20 away from the two insulating connection portions 10, and the probes 30 are located between the two insulating connection portions 10.

Under the condition that the area of a welding pad on a wafer is small and dense, the alignment difficulty of a probe 30 and the welding pad on the wafer can be reduced by reasonably setting the distance between the plurality of conductive parts 20, and meanwhile, because the probe structure also comprises the two insulating connecting parts 10, a force arm can be formed between the probe 30 and the insulating connecting parts 10, the horizontal distance between the two insulating connecting parts 10 and the probe 30 is reasonably set, and meanwhile, the pressure applied to the two insulating connecting parts is reasonably controlled in the test process, so that the adjustment of the pressure of a needle head can be realized, the pressure of the needle head meets the requirement of wafer detection, and further, the efficiency and the accuracy of wafer detection are improved.

For example, since the force arms can be formed between the probes and the insulating connection portions, the horizontal distance between the two insulating connection portions 10 and the probes 3 can be controlled by controlling the installation positions of the two insulating connection portions 10 and the probes 30 on the conductive portions 20, and the force arms on both sides of the probes 30 can be controlled.

For example, for the probe 30 with a smaller size, in order to improve the accuracy of wafer detection, the pressure of the probe 30 during the detection process may be increased, and at this time, the distance between the two insulating connection portions 10 and each probe 30 is made larger to increase the moment arm formed by the probe 30 and the insulating connection portion 10, so that the pressure of the probe 30 during the detection process on the wafer to be detected may be increased, and the probe head pressure may meet the requirement of wafer detection.

On the contrary, for the probe 30 with a larger size, in order to avoid the influence of the excessive pressure of the needle head of the probe 30 on the wafer reliability, the pressure of the probe 30 in the detection process can be reduced, and at this time, the distance between the two insulating connection parts 10 and each probe 30 is shortened to reduce the moment arm formed between the probe 30 and the insulating connection part 10, so that the acting force of the probe 30 in the detection process can be reduced, and the needle head pressure can also meet the requirement of the wafer detection.

In an alternative embodiment, as shown in fig. 1 and 2, adjacent conductive portions 20 of the plurality of conductive portions 20 are arranged at equal intervals. Since the conductive part 20 may be formed by an etching process, the design of the mask used in the etching process may be facilitated by arranging the conductive parts 20 at equal intervals; on the other hand, by arranging the conductive portions 20 at equal intervals, it is also possible to facilitate adjustment of the intervals between the adjacent conductive portions 20 by the etching process.

In the above alternative embodiment, as shown in fig. 1 and 2, it is also possible to make the width of each conductive portion 20 in the first direction the same. By providing the conductive portions 20 with the same width in the first direction, not only is the design of the mask during the etching process simpler, but also the adjustment of the spacing between adjacent conductive portions 20 is facilitated.

To further reduce the design difficulty of the mask during the etching process and facilitate the adjustment of the spacing between adjacent conductive portions 20, it is further optional that each conductive portion 20 has the same shape, as shown in fig. 1 and 2.

The plurality of conductive portions 20 are spaced apart in a first direction and each conductive portion 20 of the plurality of conductive portions 20 extends in a second direction, and in an alternative embodiment, as shown in fig. 1 and 2, the first direction a is perpendicular to the second direction B. By making the arrangement direction of the conductive parts 20 perpendicular to the extension direction, the reduction of the mask size in the etching process can be facilitated, and the adjustment of the spacing between adjacent conductive parts 20 by the etching process is facilitated.

In an alternative embodiment, each probe 30 of the plurality of probes 30 extends in a direction perpendicular to the conductive portion 20, as shown in fig. 2. The arrangement mode can meet the requirement of the vertical probe card on the test needle.

In the above embodiments of the present disclosure, the probe structure may further include a support 40 connected to the insulating connection portion 10, and the conductive portion 20 is connected to the support 40 through the insulating connection portion 10. The support frame 40 is used to fix the plurality of conductive portions 20 by the insulating connection portion 10.

In order to facilitate that all the conductive parts 20 can be fixed to the supporting frame 40 by the insulating connecting parts 10, in an alternative embodiment, the supporting frame 40 is arranged around the outer circumference of the plurality of conductive parts 20, as shown in fig. 1.

In an alternative embodiment, as shown in fig. 2, each conductive portion 20 includes a first conductive segment 110, a second conductive segment 120, and a third conductive segment 130 connected in series, wherein one of the two insulated connections 10 is connected to the first mounting surface 101 of the first conductive segment 110 and the other of the two insulated connections 10 is connected to the second mounting surface 102 of the third conductive segment 130, the first conductive segment 110 has a first surface opposite the first mounting surface 101, the third conductive segment 130 has a second surface opposite the second mounting surface 102, the first and second surfaces are located in a first horizontal plane, the second conductive segment 120 has a third mounting surface 103 on which the probe 30 is disposed, and the third mounting surface 103 is located in a second horizontal plane parallel to the first horizontal plane.

In the above alternative embodiment, the third mounting surface 103 of the second conductive segment 120 can be protruded from the first conductive segment 110 and the third conductive segment 130, so as to facilitate the mounting of the plurality of conductive parts 20 on the supporting frame 40 through the insulating connection portion 10, and also facilitate the one-to-one fixing of the probes 30 on the third mounting surfaces 103 of the conductive parts 20 through a soldering process or the like. In addition, since the second conductive segment 120 partially protrudes from the first conductive segment 110 and the third conductive segment 130, the conductive part 20 has a certain deformation capability, and further, the probe structure can adaptively adjust the pressure of the probe head to a certain extent.

In an alternative embodiment, the probe 30 is disposed at the middle of the third mounting surface 103 in the second direction. Since a force arm can be formed between the probe 30 and the insulating connecting part 10, the probe 30 is positioned in the middle of the third mounting surface 103, so that the adjustment of the force arm can be facilitated.

Illustratively, in the case that the pressure on the needle of the probe 30 needs to be increased, the moment arm formed by the probe 30 and the insulating connection part 10 is increased by increasing the distance between the two insulating connection parts 10 and each probe 30, and since the probe 30 is located in the middle of the third mounting surface 103, the moment arm on both sides of the probe 30 can be increased to have the same action force by moving the two insulating connection parts 10 by the same distance in the second direction away from the probe 30.

In the case that the pressure of the probe 30 tip needs to be reduced, the moment arm formed by the probe 30 and the insulating connection part 10 is reduced by shortening the distance between the two insulating connection parts 10 and each probe 30, and since the probe 30 is located at the middle of the third mounting surface 103, the moment arms located at both sides of the probe 30 can be reduced to have the same action force by moving the two insulating connection parts 10 by the same distance in the second direction close to the probe 30.

In the probe structure of the embodiment, the distance between the two insulating connecting parts 10 and each probe 30 can be adjusted according to the size of the needle head of the probe 30.

For example, in the case that the tip of the probe 30 has a large size, the probe 30 may have a large pressure when being applied to the wafer to be detected, and at this time, the distance between the two insulating connection portions 10 and each probe 30 is shortened to reduce the moment arm formed by the probe 30 and the insulating connection portion 10, so that an excessive force caused by a large moment arm at both sides of the probe 30 can be avoided, and further, the damage to the wafer to be detected during the detection process due to the excessive tip pressure of the probe 30 is reduced.

Under the condition that the needle heads of the probes 30 are small in size, the pressure of the probes 30 is small when the probes 30 are applied to a wafer to be detected, the force arm formed by the probes 30 and the insulating connecting parts 10 is increased by increasing the distance between the two insulating connecting parts 10 and each probe 30, so that the phenomenon that the acting force caused by the small force arm at the two sides of the probes 30 is too small can be avoided, and the accuracy of the probes 30 in detecting the wafer to be detected is improved.

In order to facilitate the adjustment of the moment arm formed by the probe 30 and the insulating connection 10, in some other alternative embodiments, the two insulating connections 10 have the same shape and/or the two insulating connections 10 extend in the same direction. Further optionally, both insulating connections 10 extend in the first direction.

In the above-described embodiments of the present disclosure, the conductive portion 20 may be formed of a conventional conductive material. In an alternative embodiment, the conductive part 20 is a metal foil structure. The pitch of the conductive portions 20 formed by etching the metal foil can be made small while facilitating adjustment of the thickness of the conductive portions 20. Illustratively, the conductive portion 20 is a copper foil structure.

According to another embodiment of the present disclosure, there is also provided a method for manufacturing the probe structure, including the following steps: forming a plurality of conductive portions 20, the plurality of conductive portions 20 being arranged at intervals in a first direction, and each conductive portion 20 of the plurality of conductive portions 20 extending in a second direction, the first direction crossing the second direction; two insulating connection parts 10 arranged at intervals are arranged on the same side of the plurality of conductive parts 20; a plurality of probes 30 are provided in one-to-one correspondence on the sides of the plurality of conductive portions 20 away from the two insulated connection portions 10, and the plurality of probes 30 are located between the two insulated connection portions 10.

Under the condition that the area of a welding pad on a wafer is small and dense, the alignment difficulty of a probe 30 and the welding pad on the wafer can be reduced by reasonably setting the distance between the plurality of conductive parts 20, and meanwhile, because the two insulating connection parts 10 which are arranged at intervals are arranged on the same side of the plurality of conductive parts 20 in the manufacturing method of the probe structure, a force arm can be formed between the probe 30 and the insulating connection parts 10, the adjustment of the pressure of a needle head can be realized by reasonably setting the horizontal distance between the two insulating connection parts 10 and the probe 30, the pressure of the needle head can meet the requirement of wafer detection by adjusting the force arm, and further, the accuracy of the wafer detection is improved.

Exemplary embodiments of a method of fabricating a probe structure provided according to the present invention will be described in more detail below with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It should be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art.

First, a plurality of conductive parts 20 are formed, as shown in fig. 3, the plurality of conductive parts 20 are arranged at intervals in a first direction, and each conductive part 20 of the plurality of conductive parts 20 extends in a second direction, the first direction intersecting the second direction.

In an alternative embodiment, the step of forming the plurality of conductive portions 20 includes: providing a metal foil; the metal foil is etched to form a plurality of conductive portions 20 having an equal pitch arrangement, as shown in fig. 3. The pitch between the conductive portions 20 formed by etching the metal foil can be made small while facilitating the adjustment of the thickness of the conductive portions 20.

Illustratively, the conductive portion 20 is a copper foil structure. The etching process may be a wet etching process, but is not limited to the above-mentioned optional species.

In an optional implementation manner, the manufacturing method of this embodiment further includes the following steps: the metal foil is etched to form a plurality of conductive parts 20 and a support frame 40 surrounding the plurality of conductive parts 20, as shown in fig. 4. With the above alternative embodiment, the conductive portion 20 and the support frame 40 are formed simultaneously by the same etching process, which can simplify the process flow and thus improve the process efficiency.

For example, the step of simultaneously forming the plurality of conductive parts 20 and the supporting frame 40 may include: providing a copper foil and etching the copper foil to a required thickness; and arranging a mask on the copper foil, wherein the mask corresponds to the patterns of the plurality of conductive parts 20 and the support frame 40 to be formed, etching the copper foil through the mask to remove partial areas in the copper foil, and forming the plurality of conductive parts 20 and the support frame 40 surrounding the plurality of conductive parts 20 by the residual copper foil.

In order to facilitate the layout design and the process manufacturing of the mask, in an alternative embodiment, as shown in fig. 4, adjacent conductive portions 20 of the plurality of conductive portions 20 are disposed at equal intervals. Since the conductive part 20 may be formed by an etching process, the design of the mask used in the etching process may be facilitated by arranging the conductive parts 20 at equal intervals; on the other hand, by arranging the conductive portions 20 at equal intervals, it is also possible to facilitate adjustment of the intervals between the adjacent conductive portions 20 by the etching process.

In the above alternative embodiment, as shown in fig. 4, it is also possible to make the width of each conductive portion 20 in the first direction the same. By providing the conductive portions 20 with the same width in the first direction, not only is the design of the mask during the etching process simpler, but also the adjustment of the spacing between adjacent conductive portions 20 is facilitated.

To further reduce the design difficulty of the mask during the etching process and facilitate the adjustment of the spacing between adjacent conductive portions 20, it is further optional that each conductive portion 20 has the same shape, as shown in fig. 4.

The plurality of conductive portions 20 are spaced apart in a first direction, and each conductive portion 20 of the plurality of conductive portions 20 extends in a second direction, in an alternative embodiment, as shown in fig. 4, the first direction a is perpendicular to the second direction B. By making the arrangement direction of the conductive parts 20 perpendicular to the extension direction, the reduction of the mask size in the etching process can be facilitated, and the adjustment of the spacing between adjacent conductive parts 20 by the etching process is facilitated.

After the step of forming the plurality of conductive portions 20, as shown in fig. 5, two insulating connection portions 10 are disposed on the same side of the plurality of conductive portions 20 at intervals. The insulating connection portion 10 is used to fix the plurality of conductive portions 20.

Illustratively, the material forming the insulating connection portion 10 includes plastic, such as polyvinyl chloride (PVC) or polymethyl methacrylate (PMMA).

Illustratively, before the step of disposing two insulating connecting portions 10 spaced apart on the same side of the plurality of conductive portions 20, a supporting frame 40 surrounding the plurality of conductive portions 20 is formed, and in the step of disposing the two insulating connecting portions 10, the insulating connecting portions 10 are further disposed on the supporting frame 40, as shown in fig. 5, so that the plurality of conductive portions 20 are fixedly connected to the supporting frame 40 through the two insulating connecting portions 10.

After the step of disposing two insulating connection portions 10 disposed at intervals on the same side of the plurality of conductive portions 20, as shown in fig. 6, a plurality of probes 30 are disposed in one-to-one correspondence on the sides of the plurality of conductive portions 20 far from the two insulating connection portions 10, and the plurality of probes 30 are located between the two insulating connection portions 10.

Illustratively, the plurality of probes 30 are disposed on the plurality of conductive portions 20 in a one-to-one correspondence using a soldering process. The adoption of the welding process can ensure that the probe 30 is connected on the conductive part 20 more firmly, and avoid the reduction of the reliability of the device caused by the falling of the probe 30.

Because the force arm can be formed between the probes and the insulating connecting parts, the horizontal distance between the two insulating connecting parts and the probes can be changed by adjusting the arrangement positions of the two insulating connecting parts 10 and the probes 30 on the conductive parts 20, and the adjustment of the pressure of the needle head can be realized by adjusting the force arm, so that the pressure of the needle head meets the requirement of wafer detection.

It should be noted that, in the manufacturing method provided in this embodiment, the sequence of the steps is not limited to the above-mentioned embodiment, for example, in this embodiment, a plurality of probes 30 may be disposed on the same side of the plurality of conductive parts 20 in a one-to-one correspondence manner, and then two insulating connection parts 10 disposed at intervals are disposed on one side of the plurality of conductive parts 20 away from the probes 30, so that the two insulating connection parts 10 are located on two sides of the plurality of probes 30.

According to another embodiment of the present disclosure, a wafer testing apparatus is provided, which includes a tester and a supporting platform, on which the probe structure (also referred to as "probe card") is fixed. When the electrical test is performed, the tester sends a test signal to the probe on the probe card, the probe contacts with the test pad of the wafer through the needle insertion to achieve the purpose of testing, and the measurement result is fed back to the tester.

According to another embodiment of the present disclosure, there is also provided a method for wafer testing by using the probe structure, including the following steps: the probe structure is arranged in a wafer test device, the wafer test device comprises a tester and a support table, and the probe structure (also called probe card) is fixed on the support table.

In practical applications, the pressure applied by the probe on the probe structure on the test pad of the wafer should be moderate; if the pressure of the needle head is too high, the probe and/or other films on the wafer can be damaged; if the pressure of the probe head is too low, the contact between the probe and the test pad may be poor, and the test result may be affected.

Illustratively, the wafer 200 is placed on the base 100 of the supporting platform, the horizontal distance between the two insulating connection portions 10 and the probes 30 in the probe structure shown in fig. 1 and fig. 2 is set reasonably, and the probe structure 300 is fixed on the testing head above the supporting platform, as shown in fig. 7, and then the base is moved up and down to make the probes in the probe structure 300 contact with the testing contact points on the wafer 200, and the pressure applied on the two insulating connection portions is controlled reasonably during the testing process, so as to adjust the pressure of the probe head, and make the pressure of the probe head meet the requirements of wafer detection.

From the above description, it can be seen that the above-described embodiments of the present disclosure achieve the following technical effects:

1. because the probe structure comprises two insulation connection parts 10, a plurality of conductive parts 20 are arranged on the same side of the two insulation connection parts 10 and are arranged at intervals along a first direction, and the probes 30 are arranged on one side of the conductive parts 20 away from the two insulation connection parts 10 in a one-to-one correspondence manner, so that a force arm can be formed between the probes 30 and the insulation connection parts 10, the adjustment of the pressure of the needle head can be realized by reasonably setting the horizontal distance between the two insulation connection parts 10 and the probes 30 and reasonably controlling the pressure applied to the two insulation connection parts in the test process, so that the pressure of the needle head meets the requirement of wafer detection, and the efficiency and the accuracy of wafer detection are further improved;

2. because the plurality of conductive parts 20 in the probe structure are arranged at intervals along the first direction, each conductive part 20 in the plurality of conductive parts 20 extends along the second direction, and the first direction is crossed with the second direction, under the condition that the area of a welding pad on a wafer is small and dense, the alignment difficulty of a probe 30 and the welding pad on the wafer can be reduced by reasonably arranging the intervals of the plurality of conductive parts 20.

The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, and various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A probe structure, comprising:

two insulating connecting parts arranged at intervals;

a plurality of conductive portions disposed on a same side of the two insulated connecting portions, the plurality of conductive portions being disposed at intervals along a first direction, and each of the plurality of conductive portions extending along a second direction, the first direction crossing the second direction;

and the probes are arranged on one sides of the conductive parts, which are far away from the two insulating connecting parts, one by one, and are positioned between the two insulating connecting parts.

2. The probe structure of claim 1, wherein adjacent ones of the plurality of conductive portions are equally spaced.

3. The probe structure according to claim 2, wherein a width of each of the conductive portions in the first direction is the same.

4. The probe structure of claim 3, wherein each of the conductive portions has the same shape.

5. The probe structure of claim 1, wherein the first direction is perpendicular to the second direction.

6. The probe structure of claim 1, wherein each conductive portion comprises a first conductive segment, a second conductive segment, and a third conductive segment connected in series, wherein one of the two insulated connections is connected to a first mounting face of the first conductive segment and the other of the two insulated connections is connected to a second mounting face of the third conductive segment, the first conductive segment having a first surface opposite the first mounting face, the third conductive segment having a second surface opposite the second mounting face, the first and second surfaces lying in a first horizontal plane, the second conductive segment having a third mounting face on which the probe is disposed, the third mounting face lying in a second horizontal plane parallel to the first horizontal plane.

7. The probe structure according to claim 6, wherein the probe is provided in a middle of the third mounting surface in the second direction.

8. The probe structure of claim 7, wherein the two insulating connections have the same shape.

9. The probe structure according to any one of claims 1 to 8, wherein each conductive portion is a metal foil structure.

10. The probe structure according to any one of claims 1 to 8, further comprising a support frame connected to the insulating connection portion, the conductive portion being connected to the support frame through the insulating connection portion.

11. The probe structure of claim 10, wherein the support frame is circumferentially disposed around the outer periphery of the plurality of conductive portions.

12. A method for fabricating a probe structure according to any one of claims 1 to 11, comprising the steps of:

forming a plurality of conductive portions which are arranged at intervals along a first direction, and each of which extends along a second direction, the first direction crossing the second direction;

two insulating connecting parts which are arranged at intervals are arranged on the same side of the plurality of conductive parts;

and arranging a plurality of probes in one-to-one correspondence on one sides of the conductive parts, which are far away from the two insulated connecting parts, wherein the probes are positioned between the two insulated connecting parts.

13. The probe structure of claim 12, wherein the forming a plurality of conductive portions comprises:

providing a metal foil;

etching the metal foil to form the plurality of conductive parts arranged at equal intervals.

14. The probe structure of claim 13, wherein the forming a plurality of conductive portions further comprises:

and etching the metal foil to form a support frame surrounding the plurality of conductive parts while forming the plurality of conductive parts.

15. The probe structure according to any one of claims 12 to 14, wherein the plurality of probes are disposed on the plurality of conductive portions in a one-to-one correspondence using a soldering process.