JP2010098046A - Probe card and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LSI testing probe card which can materialize an electric conduction with an electrode at a low load without damaging the electrode and a structure thereunder even when the electrode on an LSI becomes at a narrow pitch. <P>SOLUTION: On an upper face of a film-shaped probe formed with a contact terminal 5 of a quadri-pyramidal shape or quadri-pyramid trapezoidal shape, a protrusion 9 is formed in a portion just above the contact terminal 5, and the protrusion 9 is combined with an elastomer 6 to form a structure of being pressed by a support plate, thereby absorbing a local deformation of the film-shaped probe, and materializing a contact property at a uniform and small load and at a low resistance. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a probe card and a semiconductor device manufacturing technique, and in particular, a probe card provided with a probe sheet formed by a method similar to the method used for manufacturing a semiconductor integrated circuit, and an inspection by a semiconductor inspection apparatus including the probe card The present invention relates to a technique effective when applied to a semiconductor device manufacturing process including a process.

  FIG. 27 shows an inspection in which the quality of a circuit is judged after a circuit (generally referred to as an LSI) is formed in a manufacturing process of a semiconductor device in which a semiconductor integrated circuit is formed on a semiconductor wafer (hereinafter simply referred to as a wafer). It is a flowchart which shows the general example of the flow of a process.

  In the LSI manufacturing process, the following three inspections are performed roughly as shown in FIG. First, an initial inspection regarding the operation of the LSI is performed in a wafer state in which the semiconductor integrated circuit and the electrode are formed, and the conduction state and the electric signal operation state of the semiconductor element are grasped (process P101). Then, after dividing the wafer to make the LSI a semiconductor chip (hereinafter simply referred to as a chip) (process P102), the semiconductor element is operated at a high temperature, a high applied voltage, etc. A burn-in inspection is performed to extract semiconductor elements that are uneasy from the viewpoint of reliability (process P103). Then, before shipping the semiconductor device, the operation surface is classified by a screening inspection for grasping the performance of each chip (process P104) and the appearance check (process P105). Through these inspections, quality chips that can be shipped as products are processed into various mounting forms as necessary.

  In an apparatus (semiconductor inspection apparatus) used for such LSI inspection, in order to inspect the electrical characteristics of a large number of LSIs, for example, it is fixed by protruding obliquely downward from the lower surface of a circuit board 102 as shown in FIG. An inspection jig (probe card) configured by fixing a probe (probe) 103 made of hard metal such as tungsten with solder 101 or resin 104 is used. In the inspection using this inspection jig, electrical continuity is obtained by pressing the tip of the probe 103 against an electrode on the LSI and mechanically contacting it, and the electrical characteristics thereof are inspected.

  In recent years, the number of electrodes on an LSI has increased as the degree of LSI integration has increased and the number of functions has increased, and the arrangement pitch of the electrodes has become narrower. Pinning is in progress. With such a transition, in the probe made of the hard metal needle as described above, it is gradually difficult to press the probe with high positional accuracy to the minute electrodes arranged at a narrow pitch on the LSI in terms of processing accuracy and assembly accuracy. It is becoming. In addition, in order to cope with the narrow pitch of the electrode arrangement, the hard metal needles constituting the probe must be made very thin. For this reason, the hard metal needles are easily deformed by the pressing force and can withstand repeated pressing. There is a tendency to deform without being done. As described above, a probe made of a hard metal needle is not suitable for increasing the number of electrodes and narrowing the pitch of the electrode arrangement, and ensures electrical contact when increasing the number of electrodes and narrowing the pitch. Development of a probe card that can be used is desired.

  The probe card and the inspection method developed in anticipation of such demands are described, for example, on pages 601 to 607 (non-patent document 1) of the 1988 ITC (International Test Conference) lecture papers. Technology has been developed. FIG. 29 is a perspective view (partially broken) of the main part of the probe, and FIG. 30 is a schematic sectional view of the probe card. In the probe for conductor inspection used here, wirings 109 and 110 are formed on the surface of a flexible insulating film 105 by a photolithography technique, a ground layer 113 is formed on the lower surface of the insulating film 105, and a semiconductor to be inspected is formed. The through-hole 111 of the insulating film 105 provided at a position corresponding to the electrode is used as a probe tip, so-called contact terminal (contactor), in which a hemispherical bump 112 is formed by plating. It is a probe (probe sheet 106). The film-like probe is mechanically fixed after aligning the electrodes of the circuit board 102 and the wirings 109 and 110, and the support plate 107 is pressed against the back surface of the film-like probe to constitute a probe card. The support plate 107 supports the film constituting the probe so as to form a plane, and has a function of pressing the probe against the electrode on the LSI using the spring 108. This probe is connected to an inspection apparatus (not shown) via a wiring 110 in which bumps 112 are formed on the surface of the insulating film 105 and a circuit board 102, and the bumps 112 are connected to electrodes on the LSI by the behavior of a spring 108. A rubbing motion is imparted, whereby the bump 112 is electrically connected to the electrode.

The problem of the technique disclosed in Non-Patent Document 1 is that the contactor is a hemispherical bump formed by a plating method. Because of this shape, the oxide film on the electrode cannot be sufficiently broken, Often, high electrical resistance contacts occur. The contact of high electrical resistance is an obstacle to accurately measuring the characteristics of the LSI in the inspection, and there is a concern that the non-defective product may be discarded by erroneously determining the non-defective product as a defective product. As a technique for improving the instability of the contact resistance, there is a technique described in JP-A-7-283280 (Patent Document 1). In the example described in Patent Document 1, a quadrangular pyramid or a truncated pyramid shaped bump formed by the method shown in FIG. 31 is formed as a contactor. That is, as shown in FIG. 31 (a), a quadrangular pyramid or a truncated pyramid shaped hole 114 is formed by a silicon anisotropic etching technique at a predetermined position of a silicon wafer 115 cut out in a specific plane orientation. As shown in FIG. 31B, the hole is filled with a hard metal film 117 formed by a pattern electroplating technique using a plating base film 116 and a resist pattern 117A. Further, as shown in FIG. 31C, after forming a resin film 118 such as polyimide on the pattern of the hard metal film 117, a resin is formed on the pattern of the hard metal film 117 as shown in FIG. A through hole is opened in the film 118, and a wiring 109 is formed using a pattern electroplating technique. Finally, by separating the formation on the surface of the silicon wafer 115 from the silicon wafer 115, a film-like probe having a quadrangular pyramid or a truncated pyramidal contactor can be obtained (FIG. 31E). reference).
1988 ITC (International Test Conference) Lectures (Pages 601-607) JP-A-7-283280

  Since recent LSIs are equipped with a large number of circuits as described above, they are equipped with narrow pitch, multi-pin electrodes, and a wiring layer connecting elements as in the cross-sectional structure of the LSI shown in FIG. In order to transmit an electrical signal at high speed and accurately, the wirings 124, 126, 127, and 128 are formed mainly of copper having a low electrical resistance. Further, in order to increase the speed of electric signals, as the interlayer insulating layers 123 and 125, a low dielectric constant insulating film (Low−) such as a fluorine-doped silicon oxide film (FSG (fluorosilicate glass) film) or a silicon oxynitride film (SiOC) is used. A material having a smaller dielectric constant than that of a silicon oxide film formed by a CVD method such as a k film) has been used. Most low-dielectric materials that have been used in recent years, including these low-dielectric materials, are brittle because the material is porous in order to reduce the dielectric constant, and are resistant to external forces. weak. For this reason, when the electrical operation test is performed, if the probe is strongly pressed against the electrode on the LSI surface, not only the electrode but also the interlayer insulating layers 123 and 125 formed thereunder may be destroyed. In some cases, the LSI may be destroyed by the inspection. Further, in recent LSIs, in order to reduce the size of the LSI as much as possible, an example in which an electrode is formed on the semiconductor element 122 is increasing. In such a structure, the probe is used as the electrode. The contact may cause an abnormality in the operation of the semiconductor element 122 due to the force applied from above. From this point of view, it is feared that the LSI is broken in the inspection. Even if the semiconductor element 122 that has been broken halfway at the time of inspection operates normally without any abnormality, there is a problem in reliability that the breakdown proceeds due to a temperature change during use, and the semiconductor element 122 does not operate in a short time. Development of a probe that does not break the etc. is desired.

  A probe was pressed against an electrode on an LSI that uses a low dielectric material, which is a brittle material like this, as an interlayer insulation layer. It was found that the applied force was a low load of several tens of mN or less as a force perpendicular to the electrode. It has also been found that a probe capable of realizing a low contact resistance value even under such a low load is necessary.

  Furthermore, in addition to suppressing the pressing load, it is necessary to increase the accuracy of the probe tip position in order to cope with the narrow pitch of the electrodes. In addition, since the electrode is small, the effect of scratches on the electrode caused by pressing the probe against the electrode cannot be ignored. Wire bonding or connection bumps are formed on the scratch to connect to external circuits. However, since there is a concern that connection breakage may occur from the scratch as a starting point, it is also necessary to make this scratch as small as possible.

  Therefore, the present inventors have studied in detail a technique for solving these problems.

  As shown in FIG. 33A, in aluminum and solder, which are representative materials for forming the electrode 130 on the LSI, a high resistance oxide film 131 is always formed on the surface for natural oxidation. Such an oxide film 131 is an obstacle in measuring electrical characteristics. When a probe 132 made of a hard metal such as tungsten (see FIG. 28) or a hemispherical bump 112 (see FIGS. 29 and 30) formed by plating on a part of a copper wiring is used as the probe 132, When the portion actually contacting the electrode 130 is viewed, it is formed of a curved surface having a larger radius than the film thickness of the electrode 130. Therefore, as shown in FIG. 33 (b), when the tip of the probe 132 is simply pressed against the electrode 130, the thickness of the electrode 130 is so thin that the sinking depth of the tip is very shallow. It is difficult to make a direct contact with the original metal that sufficiently breaks and forms the electrode 130, and often the oxide film 131 is sandwiched. Therefore, in order to break the oxide film 31 using these probes 131 and establish conduction with a sufficiently low contact resistance, the tip of the probe 132 is moved while being pressed against the electrode 130 as shown in FIG. As a result, the surface of the electrode 130 is scratched to expose the new surface 133 without the oxide film 131, and the probe 132 needs to be brought into contact with this portion. However, as a side effect of such an operation, the probe 132 itself rides on the metal scrap 134 (oxide film 131) pushed by the probe 132 and sporadically fails to contact the newly formed surface 133, so that accurate measurement is disturbed. As a result, the apparent manufacturing yield is reduced. Further, such an operation causes not only the oxide film 131 but also the metal film itself constituting the electrode 130 to be greatly damaged, and also applies a tearing force to the electrode 130. When this force is transmitted to the lower insulating layer, wiring, etc., these lower layer structures are easily broken. Further, the metal scrap 134 may drop off and become a foreign substance on the wafer, which may cause a short circuit between the plurality of electrodes 130.

  Until now, since the electrode 130 was composed only of an insulating layer made of a hard inorganic material, the electrode 130 itself was not broken even when a large force was applied, and the electrode 130 itself was large. By shifting the bonding and bump formation positions, the above-mentioned connection failure could be avoided, but such measures can be applied by reducing the size and pitch of the electrodes 130 as the chip size is reduced. It is disappearing. In addition, in a film-like probe in which a bump 112 formed by plating on a part of the wiring 110 made of copper serves as a probe, it is inevitable that minute variations occur in the height of the bump 112 due to the manufacturing method. . In addition, since the bumps 112 are connected by the insulating film 105 and do not move independently, if there is a bump 112 with a slightly low height and insufficient contact, in order to make all the bumps 112 completely contact, Therefore, there is a problem that an excessive load is applied depending on the electrode 130. This problem is also observed in a film-like probe (see FIG. 31) in which a pyramidal contactor is formed on a wiring formed on a flexible insulating film. However, there is a common problem caused by the structure in which the contactors are strongly connected to each other.

  Among these problems, first, considering that the problem caused by breaking the oxide film 131 on the surface of the electrode 130 is considered, the oxide film on the surface of the electrode 130 with a small load without moving the probe 132 or the tip of the contactor. It is necessary to break 31. For this purpose, it is optimal to form a sufficiently sharp corner at the tip of the probe compared to the thickness of the electrode 130 (usually around 1 μm), and to break the oxide film 131 by pressing the corner against the oxide film 131. It is. Such an operation can be realized by a probe using a pyramidal contact terminal (see FIG. 31) among existing probes, and this probe is low even if the probe tip does not move on the electrode 130. Contact resistance is realized. Further, for narrowing the pitch of the electrodes 130 on the LSI, the pitch of the probe 132 or contactor can be narrowed, the positional accuracy of the probe 132 or contactor is high, and in addition, it is necessary to break the oxide film 131. A force needs to be applied to the probe 132 or contactor. A film-like probe (see FIG. 31) in which a pyramidal contactor is formed on a wiring formed on the flexible insulating film satisfies these necessary conditions at a high level. Therefore, the object can be achieved by solving the problem of overload caused by slight variations in the height of the contactor tip, which is a drawback of the membrane probe.

  An object of the present invention is to provide a probe for LSI inspection that can realize electrical continuity with an electrode with a low load without damaging the electrode and the underlying structure even when the electrode on the LSI has a narrow pitch. To provide a card.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

(1) A probe card according to the present invention comprises:
A plurality of contact terminals that come into contact with a plurality of electrodes provided on the object to be inspected, a pad formed integrally with the contact terminal, a wiring drawn from each of the pads, and a resin that covers the pad and the wiring A film-like probe having a film and a plurality of peripheral electrodes electrically connected to the wiring and connected to an electrode on an external wiring board;
On the back surface of the film-like probe opposite to the main surface where the contact terminal is exposed, the first region corresponding to the position immediately above the contact terminal is 3 μm or more higher than the surface of the surrounding film-like probe Part
A plate or sheet made of an elastic material is stacked on the back surface of the film-like probe so as to be in contact with the protrusion,
A plate made of metal or ceramic is overlaid on the sheet, and the mechanism for pressing the contact terminal against the object to be inspected incorporates the film probe, the sheet and the laminate made of the plate. is there.

(2) A method of manufacturing a semiconductor device according to the present invention includes:
Forming a circuit and a plurality of electrodes electrically connected to the circuit on a semiconductor wafer to form a plurality of chip regions;
Using a probe card having a plurality of contact terminals that are in contact with the plurality of electrodes provided in the plurality of chip regions, the plurality of contact terminals are brought into contact with the plurality of electrodes, thereby electrically connecting the plurality of chip regions. A process for inspecting characteristics;
Dicing the semiconductor wafer and separating the plurality of chip regions for each of the plurality of chip regions,
The probe card is
The plurality of contact terminals that are in contact with the plurality of electrodes provided in the plurality of chip regions, a pad formed integrally with the contact terminal, a wiring drawn from each of the pads, the pad, and the pad A film-like probe in which a resin film that covers the wiring and a plurality of peripheral electrodes that are electrically connected to the wiring and connected to electrodes on an external wiring board are formed;
On the back surface of the membrane probe opposite to the main surface where the contact terminal is exposed, the first region corresponding to the position immediately above the contact terminal is 3 μm or more higher than the surface of the surrounding membrane probe Part
A plate or sheet made of an elastic material is overlaid on the back surface of the film-like probe so as to be in contact with the protrusion,
A plate made of metal or ceramic is overlaid on the sheet, and the mechanism for pressing the contact terminal against the object to be inspected incorporates the film probe, the sheet and the laminate made of the plate. is there.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  Further, according to the present invention, a probe card including a film-like probe in which lead wires from contact terminals are collectively formed, a pressing mechanism including a push plate and an elastomer, and a wiring board on which these are mounted has a conventional film-like probe. In addition to the excellent characteristics of narrow pad pitch applicability and high contactor position accuracy, on the upper surface of the membrane probe on which the contact terminals in the shape of a quadrangular pyramid or a square frustum are formed, The formation of the protrusions has the following effects.

  (1) Even when contacting and inspecting a large number of electrodes with a narrow pitch of 100 μm or less, it is possible to contact with a uniform and low load, so that an LSI using a dielectric material having a low mechanical strength as an insulating layer In the inspection, the inspection can be performed without damaging the structure under the electrode.

  (2) Even when a large number of electrodes having a narrow pitch of 100 μm or less are contacted and inspected, they can be contacted with a low load. Therefore, when a conventional membrane probe is pressed with a large load, it is mechanical. There is no slippage of the contact terminal on the electrode, which is likely to occur due to elastic deformation, etc., and the scratches generated at the time of contact on any electrode surface are extremely small. Even if a structure for connection is formed, the structure itself and the strength of connection are not affected at all. Therefore, an LSI with high reliability after inspection can be provided. In addition, since it is not necessary to form these structures while avoiding scratches on inspection, the electrode size can be reduced.

  (3) Compared to the conventional membrane probe, there is almost no increase in the number of steps necessary to carry out the present invention, and the influence on the manufacturing cost can be reduced.

  In the following embodiments, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. In addition, when referring to the constituent elements in the embodiments, etc., “consisting of A” and “consisting of A” do not exclude other elements unless specifically stated that only the elements are included. Needless to say.

  Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  In addition, when referring to materials, etc., unless specified otherwise, or in principle or not in principle, the specified material is the main material, and includes secondary elements, additives It does not exclude additional elements. For example, unless otherwise specified, the silicon member includes not only pure silicon but also an additive impurity, a binary or ternary alloy (for example, SiGe) having silicon as a main element.

  In addition, components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

  In the drawings used in the present embodiment, even a plan view may be partially hatched to make the drawings easy to see.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
“Provides a probe card for LSI inspection that can realize electrical continuity with an electrode with a low load without damaging the electrode and the underlying structure even when the electrode on the LSI has a narrow pitch.” This object can be achieved by improving a film-like probe defect in which a pyramidal contactor capable of obtaining good electrical continuity is formed on a wiring formed on a flexible insulating film. This membrane-like probe is derived from its structure and manufacturing method, and is excellent in terms of the positional accuracy of each probe, and can sufficiently cope with a narrow pitch electrode array of less than about 50 μm.

  For this purpose, the present inventors first examined in detail the cause of excessive load caused by slight variations in the height of the contactor tip of the membrane probe. As shown in FIG. 1, the film-like probe presses the tip of the contact terminal 5 against the electrode with the upper push plate 3 through the sheet 2 on which the wiring 1 is formed. Therefore, the height of the tip of the contact terminal 5 is relatively determined by the wiring between the push plate 3 and the electrode on the LSI, the thickness variation of the tip of the pad 4 and the contact terminal 5, and the unevenness of the film thickness due to the layout. It varies. In order to absorb this variation as much as possible, an elastomer 6 made of a sheet-like organic material is sandwiched between a push plate 3 and a film-like probe as shown in FIG. 1 in Japanese Patent Laid-Open No. 7-283280. As a result, contactability is significantly improved. Further, if the sheet 2 is made as thin as possible to make the entire membrane probe flexible and a slight individual mobility is given to the tip of the contact terminal 5, the effect of absorbing the height variation by the elastomer 6 is increased, and the contact characteristics are increased. Is further improved.

  However, with the increase in the number of electrodes on the LSI and the reduction in the electrode arrangement pitch, the effect of the improvement tends to be reduced. This is because the gap between the probes generating the mobility becomes narrower as the distance between the electrodes on the LSI is reduced, and the effect of thinning the sheet 2 is offset. In addition, the deformation of the elastomer 6 cannot follow the local deformation of the membrane probe (see FIG. 3).

  Another problem with the membrane probe is that when a large number of contact terminals 5 are arranged as a group of contactor rows 7 as shown in FIG. Even if pressed against the electrode, the contact terminal 5 located at the center of the group of contact terminals 5 (in the case of FIG. 4, the center of the contactor row 7) and the contact terminal 5 located at the end (corner portion), The applied load varies greatly. Here, FIG. 5 shows the relative load in the probe group indicated by reference numeral 8 in FIG. 4. The probe group 8 includes a contact terminal 5 at the center of the contactor row 7 to a contact terminal 5 at one end. It is included. As shown in FIG. 5, the load applied to the contact terminals 5 located at the center of the group of contact terminals 5 and the contact terminals 5 located at the ends is greatly different. Compared to 5, it has a greater force. This is because the contact terminals 5 in the center of the contactor row 7 share the load with the nearby contact terminals 5, whereas the contact terminals 5 at the end have a small number of neighboring probes that share the load. Therefore, in the endmost contact terminal 5, the load is concentrated because there is no one of the adjacent contact terminals 5, and the load is about 1.5 to 2 times that of the contact terminal 5 in the center. . For this reason, the contact terminal 5 at the end pushes the electrode with a load about 1.5 to 2 times that of the contact terminal 5 at the center, and in an LSI with weak mechanical strength, the end electrode And the underlying structure becomes fragile.

  Due to the two main phenomena described above, the membrane probe is not widely used because it is inferior to a probe using a hard metal needle in terms of contact characteristics and load variation on the electrode. It is the situation that is used only for purpose.

  Therefore, the present inventors have studied to avoid these problems particularly in a film-like probe corresponding to a narrow electrode pitch. As a result, the elastomer 6 disposed between the push plate 3 and the film-like probe. We have devised a method to solve the above problems by making full use of the functions of.

  That is, the present inventors hardly see these problems in the case of a large electrode pitch, and the probe 103 (see FIG. 28) made of a hard metal needle is used for contact characteristics and a load applied to the electrode. Based on the fact that it was not much different from the probe, we investigated what phenomenon occurred when the pitch was narrowed and the characteristics deteriorated. As a result, in the film-like probe corresponding to the narrow pitch, as shown in FIG. 2, the contactors are arranged on the film with almost no gap. Therefore, as described above, the deformation of the elastomer causes the height of each electrode to rise. Inability to follow the variation is also a major factor. In addition, when looking at the film surface immediately above the tips of the individual contact terminals 5, in the region where the contactor rows 7 are densely arranged, the upper surface of the film-like probe is the elastomer. The sheet (elastomer 6) hits the sheet as a group. Therefore, when a force is applied from the contact terminal 5, the area of the elastomer 6 is pushed together as an integral part. For this reason, the elastomer 6 in the pushed-in area is pushed in without a space for escape, and the elastomer 6 is apparently hard and thus hardly deforms. For this reason, if the contactor (contact terminal 5) is pressed against the electrode under similar pressing conditions, the instantaneous load applied to the electrode increases, and it is difficult to absorb subtle height variations of the individual contactors. The variation in load between the electrodes also increases.

  In the present embodiment, as shown in FIG. 6, by providing a protrusion 9 in the region (first region) on the surface of the sheet directly above the contact terminal 5, the film-like probe and the elastomer 6 Is in a point contact state so that there is a small space between them. In such a state, when a force is applied to the contact terminal 5 and the protrusion 9 immediately above is pressed against the elastomer 6, the elastomer 6 in the portion where the protrusion 9 is pressed can be easily deformed. Sink into the elastomer 6 easily. As a result, as shown in FIG. 7, the relatively high contact terminal 5 quickly hits the electrode 11 on the wafer 10, but the protrusion 9 on the upper part sinks deeply into the elastomer 6 and is deeper than the periphery. Since the force 12 from the submerged protrusion 9 is dispersed in the elastomer 6, the reaction force received by the electrode 11 from the contact terminal 5 can be made as large as the surrounding electrode 11 as a result. That is, the load can be automatically equalized. With such a behavior, the contact terminal 5 is pressed against the electrode 11 on the wafer 10 with a relatively small force, so that the contact between the contact terminal 5 and the electrode 11 can be achieved. In the present embodiment, the thickness of the elastomer 6 is set to about 30 μm to 200 μm, the hardness of the elastomer 6 is set to about 30 ° to 70 ° in terms of JIS standard rubber hardness, and the variation in the height of the electrode 11 on the wafer 10 is 1 μm. In such a case, it can be exemplified that the height of the protrusion 9 is about 3 μm or more, and the contact between the contact terminal 5 and the electrode 11 becomes particularly good under such conditions.

(Embodiment 2)
Next, a method for manufacturing a membrane probe according to the present embodiment will be described.

  First, as shown in FIG. 8, a hole of a quadrangular pyramid shape or a truncated pyramid shape is formed on the surface of the wafer 20 made of single crystal silicon having a specific plane orientation by using an anisotropic etching technique. Thereafter, a copper thin film serving as a plating base film is formed on the entire surface of the wafer 20 with a thickness of about 10 to 100 nm by a sputtering technique.

  Next, a photoresist pattern is formed in which the upper part of the square pyramid-shaped or pyramidal trapezoidal hole is opened, and the copper thin film as the plating base film is used as an electric supply film to form a quadrangular pyramid shape. Alternatively, a square frustum-shaped hole is embedded with a hard metal film. As the material for the hard metal, platinum group high melting point noble metals such as platinum, palladium, rhodium and iridium are suitable. On this hard metal pattern, electro nickel plating is continuously performed to form a thick pad 4. Further, the tip of the pad 4 inside the hole of the quadrangular pyramid shape or the square frustum shape becomes the contact terminal 5. The thickness of the pad 4 determines the height of the protrusion 9 (see FIGS. 6 and 7) formed on the surface of the film-like probe. In the conventional membrane probe, the pad 4 is formed with a thickness of about 10 μm or more from the surface of the wafer 20 in consideration of only the strength of the membrane probe. In order to sufficiently obtain the effects of eliminating the variation in the thickness of the contact terminal 5 and eliminating the difference in load applied to the electrode by the contact terminal 5, the film is formed with a thickness of about 20 μm. Further, if the area of the pad 4 is too wide or too narrow, the effect of forming the protrusions 9 is reduced, and therefore it is appropriate that the surface of the pad 4 is about 20 μm to 100 μm square. In addition, since the electro nickel plating film has a relatively small film stress, it is easy to form a thick film. However, when a sulfamic acid plating bath is used, abnormalities such as deformation and cracking of the plating pattern may occur. There is no.

  Next, as shown in FIG. 9, after removing the photoresist pattern that became a mask in forming the plating pattern, a polyimide varnish is applied on the wafer 20 and further subjected to a curing bake treatment to obtain a polyimide layer. The pad 4 is covered with 21. When the thickness of the polyimide layer 21 is about 10 μm to 30 μm, a protrusion shape of about 10 μm to 15 μm is formed on the surface of the polyimide layer 21 due to the effect of the thick pad 4 formed in the lower layer.

  Next, as shown in FIG. 10, a resist pattern is formed on the polyimide layer 21, the polyimide layer 21 immediately above the pad 4 is removed by dry etching using the resist pattern as a mask, and a through hole is opened. .

  Subsequently, after removing the resist pattern, a copper thin film which is a plating base film is again formed on the entire surface of the wafer 20 by a sputtering technique. Next, a resist pattern for wiring formation is formed on the copper thin film, and electrolytic copper plating is performed using the copper thin film to form a wiring 1 made of copper. When the resist pattern is peeled off, it becomes as shown in FIG. Thereafter, unnecessary portions of the copper thin film between the wirings 1 are removed to electrically isolate the wirings 1 from each other.

  Next, as shown in FIG. 11, a polyimide layer 22 for protecting the wiring 1 is formed. Also at this time, a protrusion shape is formed on the surface of the polyimide layer 22 by the effect of the thick pad 4 formed in the lower layer. Through the steps so far, a film-like probe is almost completed.

  Next, the film-like probe is separated from the wafer 20. One of the separation methods is a method using a copper thin film formed on the surface of the wafer 20 by sputtering. That is, if a silicon oxide film is formed in advance on the surface of the wafer 20 as a base of the copper thin film, the silicon oxide film and the copper thin film can be peeled off. It is. However, this method may damage the hard metal (contact terminal 5) filled in the hole portion of the quadrangular pyramid shape or the square frustum shape formed in the wafer 20. Therefore, a better method includes a method of dissolving the wafer 20 with an etching solution. When performing this method, it is necessary to form a barrier layer of a silicon etching solution on the surface of the wafer 20 in advance. Although it is an indispensable condition that the barrier layer is free of defects, the film-like probe is not mechanically damaged.

  The effect of the thick pad 4 is that the film-like probe formed by such a method hits a quadrangular pyramid-shaped or pyramid-shaped metal protrusion (contact terminal 5) serving as a contactor on the surface of the protective polyimide layer 22. With the above-described thickness specification, a protruding amount of about 3 μm or more can be secured. In the present embodiment, the thickness of the pad 4 is used to form the protrusion on the back surface side of the contactor (contact terminal 5). However, by forming the contact terminal 5 and the pattern of the pad 4 in the same process. The objective can be achieved without increasing the number of steps.

  Here, the present inventors use the film-like probe of the present embodiment having a protrusion right above the contactor (contact terminal 5) formed as described above, and the film-like probe without the protrusion, We compared how the force applied to the electrode of the chip differs when a large number of contactors are pushed together.

  The contactors (contact terminals 5) of these film-like probes are arranged in a contactor row 31 arranged in a position corresponding to a substantially square side seen in a normal LSI, as shown in FIG. The corresponding probe group 32 was observed. Further, in order to know roughly the magnitude of the force that pushes the electrode of the chip, an aluminum thin film having a thickness of about 4 μm thicker than a normal LSI electrode is used as the electrode, and a contact terminal forming this aluminum thin film hectector row 31 The relative depth was determined by measuring the depth at which 5 was inserted. The conditions for pressing the contact terminal 5 against the wafer on which the LSI chip was built were set exactly the same, and the force with which the contact terminal 5 pressed the electrode of the chip was compared.

  As a result, as shown in FIG. 13, the relative pressing force with the film-like probe having no protrusion directly on the contact terminal 5 is measured one by one with the electrode on one side of the LSI chip corresponding to the probe group 32 described above. In summary, it was found that the trace was smaller at the center of the side and larger at the corner of the chip, that is, the end of the side. That is, it was found that the pressing force was smaller at the center of the side, and the force applied to the electrode was increased toward the end of the side. This reproduces the result shown in FIG. Considering that this tendency does not occur when the membrane-like probe is directly pressed by the rigid push plate 3 (see FIGS. 1 and 2), this tendency is caused by improving the contact characteristics. Therefore, it is considered that the influence of the sheet of the elastomer 6 sandwiched between the push plate and the film-like probe is great.

  On the other hand, in the case of a film-like probe provided with a protrusion just above the contact terminal 5, such a tendency is hardly seen, and an equal force is applied regardless of the location such as the center or end of the side. I understand that. Thus, the fact that the force applied to the electrodes of the chip does not vary between the electrodes is very effective for accurately controlling the load applied to the electrodes.

(Embodiment 3)
In the third embodiment, a method for forming the protrusion (see FIG. 11) on the contact terminal 5 by a method different from that of the second embodiment will be described.

  In the third embodiment, a film-like probe is basically formed by the same method as in the second embodiment. However, when a hard metal to be the pad 4 is formed by a plating method, as shown in FIG. It is formed with a thin film of about 10 μm or less. When the thin layer is formed as described above, the protrusion of the polyimide layer 21 thereon is reduced as shown in FIG. 15, so that in the step of forming the wiring 1 on the subsequent polyimide layer 21 (see FIG. 16), the resist pattern is formed. This facilitates the formation of the finer wiring 1.

  Next, as shown in FIG. 16, a polyimide layer 22 that protects the wiring 1 is formed. Thereafter, as shown in FIGS. 17 and 18, a planar island-shaped projection pattern 36 is formed at a position that directly contacts the contact terminal 5 by photolithography using photosensitive polyimide. FIG. 17 is a plan view of the main part showing the vicinity of the pad 4 at the time of this step.

  Thereafter, the wafer 20 is separated to complete a film-like probe. In this case, the shape of the protrusion on the back surface can be changed in a wide range depending on the coating thickness and pattern of the photosensitive polyimide layer for forming the protrusion (projection pattern 36), and an optimal protrusion shape can be formed. There are advantages. In the planar pattern, a projection pattern 36 covering two pads 4 as shown in FIG. 19 and a projection pattern 36 covering four pads 4 (four in the example shown in FIG. 20) can be exemplified. . FIG. 21 shows a cross section corresponding to FIG. 19 or FIG.

  In addition, in order to form a projection on the contact terminal 5 lastly as in the third embodiment, the material of the projection portion is not necessarily a photosensitive polyimide, and the projection of about several μm (for example, 3 μm) to 20 μm. As long as it can be formed in a shape, not only resin but also metal can be substituted. However, the purpose cannot be achieved with a soft material that is deformed by losing external force when pressed. When formed from a resin, a hard resin such as acrylic, polyethylene terephthalate, or polyimide is desirable, and when formed from a metal, copper or nickel protrusions can be formed by electroplating.

  In this method, when the contact terminals 57 are formed at a very narrow pitch, the projection pattern 36 for forming the projection does not necessarily need to be a planar island shape, and is shown in FIGS. 19 and 20. As described above, it is also possible to form a linear or belt-like pattern across a plurality of contact terminals 5 on a plane. In this way, by forming a pattern that extends over the plurality of contact terminals 5, local deformation of the film-like probe can be prevented under the projection pattern 36. Thereby, it is possible to prevent a problem that the tip of the contact terminal 5 cannot contact the electrode of the chip to be inspected.

  As described above, in the third embodiment, since the protrusion (projection pattern 36) independent of the structure of the contact terminal 5 is provided with a resin or metal pattern, there are few restrictions on the size and height of the protrusion, An optimal protrusion shape can be realized to achieve the object.

(Embodiment 4)
In the third embodiment, the projection pattern 36 that is a projection on the contact terminal 5 is formed on the polyimide layer 21. However, in the fourth embodiment, the projection pattern 36 is in contact with the pad 4. To form.

  The manufacturing process of the membrane probe according to the fourth embodiment is the same as that described with reference to FIG. 14 in the third embodiment. Next, as shown in FIG. 22, a planar island-shaped projection pattern 36 similar to that of the third embodiment is formed on the contact terminal 5. Thereafter, the film-like probe of the fourth embodiment is manufactured through the same processes as those described in the third embodiment with reference to FIGS. 15 to 18 (except for the process of forming the projection pattern 36). (See FIG. 23).

  The projection pattern 36 in the film-like probe of the fourth embodiment manufactured as described above is not necessarily made of photosensitive polyimide as in the third embodiment, and the projection of about several μm to 20 μm. As long as it can be formed in a shape, not only resin but also metal can be substituted.

  According to the fourth embodiment as described above, the same effect as in the third embodiment can be obtained.

(Embodiment 5)
In order to observe how the upper surface of the film-like probe hits the elastomer 6 (see FIGS. 2, 6 and 7), as shown in FIG. 24, a transparent glass plate 37 is used as a push plate, and further the elastomer 6 Also, the elastomer 6 when the probe is actually pressed against the electrode 11 by pressing the film-like probe (contact terminal 5) against the electrode 11 on the wafer 10 using the glass plate 37 is used. The contact state of the film-like probe 40 was observed with the optical microscope 39 through the glass plate 37. FIG. 25 is an explanatory diagram showing the observation results.

  In the case of a film-like probe having no protrusion on the contact terminal 5, the upper surface of the probe 40 in a wide area in the portion immediately above the pad 4 and the wiring 1 connected to the pad 4 before the contact terminal 5 comes into contact with the electrode 11. Even when the contact terminal 5 hits the electrode 11 because it is in contact with the elastomer 6, no clear change occurred in the contact state between the elastomer 6 and the upper surface of the film-like probe 40. That is, since the space for the deformation of the elastomer 6 itself does not exist from the beginning, it is shown that the elastomer 6 can hardly be deformed when the elastomer 6 is pushed back from the film-like probe 40.

  On the other hand, when the film-like probe 40 formed according to the present embodiment is used, the protrusion 9 is in contact with the elastomer 6 at a point before the contact terminal 5 hits the electrode 11. It can be seen from the small island-shaped interference fringes 42 observed in the contacted portion. When the contact terminal 5 starts to hit the electrode 11, the size of the interference fringe 42 increases, and the contact area between the protrusion 9 and the elastomer 6 increases. That is, it was found that the protrusion 9 was pushed into the elastomer 6, and the behavior of the film-like probe 40 as intended in the present embodiment could be confirmed.

(Embodiment 6)
Here, an example of a semiconductor device manufacturing method including an inspection process using the probe card including the film-like probe described in the first to fifth embodiments or an inspection method will be described with reference to FIGS.

  (1) The method of manufacturing a semiconductor device according to the sixth embodiment is described in the first to fifth embodiments, in which a circuit is formed on the wafer 20 to form a semiconductor device (chip region) (LSI formation). The process of collectively inspecting the electrical characteristics of a plurality of semiconductor devices at the wafer level (wafer inspection) with the probe card including the film-shaped probe, and the process of cutting the wafer 20 and separating it into individual chips (dicing) And a step (assembly and sealing) of sealing individual chips with resin or the like. After that, it is shipped as a chip package product through burn-in, sorting inspection, and appearance inspection.

  (2) A method of manufacturing a semiconductor device according to the sixth embodiment includes a step of forming a circuit on the wafer 20 to form a semiconductor device, and a probe including the film-like probe described in the first to fifth embodiments. The method includes a step of collectively inspecting electrical characteristics of a plurality of semiconductor devices at a wafer level by a card, and a step of cutting the wafer 20 and separating it into individual chips. Thereafter, the chip inspection socket is attached, burn-in, sorting inspection, removal from the socket, and appearance inspection, and then shipped as a bare chip shipment.

  (3) A method of manufacturing a semiconductor device according to the sixth embodiment includes a step of forming a circuit on the wafer 20 to form a semiconductor device, and a probe including the film-like probe described in the first to fifth embodiments. And a step of collectively inspecting electrical characteristics of a plurality of semiconductor devices at a wafer level using a card. After that, it is shipped as a full wafer shipment product through burn-in, sorting inspection, and appearance inspection.

  (4) A method of manufacturing a semiconductor device according to the sixth embodiment includes a step of forming a circuit on the wafer 20 to form a semiconductor device, and a probe including the film-like probe described in the first to fifth embodiments. And a step of collectively inspecting electrical characteristics of a plurality of semiconductor devices at a wafer level using a card. After that, through a burn-in and an appearance inspection, the wafer 20 is cut and separated into individual chips, and after an appearance inspection, it is shipped as a bare chip shipment.

  (5) The semiconductor device manufacturing method according to the sixth embodiment is described in the first to fifth embodiments, in which a circuit is formed in the wafer 20 to form the semiconductor device, the wafer 20 is divided, and the first to fifth embodiments. And a step (divided wafer inspection) for collectively inspecting electrical characteristics of a plurality of semiconductor devices at a wafer level divided by a probe card including the film-like probe. Then, after burn-in, sorting inspection and appearance inspection, they are shipped as divided wafer shipment products.

  (6) The semiconductor device manufacturing method according to the sixth embodiment is described in the first to fifth embodiments, in which a circuit is formed on the wafer 20 to form the semiconductor device, the wafer 20 is divided, and the first to fifth embodiments. And a step of collectively inspecting electrical characteristics of a plurality of semiconductor devices at a wafer level divided by a probe card including the film-like probe. After that, it is shipped as a bare chip shipment product through a burn-in, sorting inspection, a process of cutting the divided wafers and separating them into chips and an appearance inspection.

  (7) A method of manufacturing a semiconductor device according to the sixth embodiment includes a step of forming a circuit on the wafer 20 to form a semiconductor device, a step of forming a resin layer or the like on the wafer 20 (resin layer formation), And a step of collectively inspecting the electrical characteristics of the plurality of semiconductor devices formed on the wafer 20 on which the resin layer or the like is formed, using the probe card including the film-like probe described in the first to fifth embodiments. After that, the wafer 20 is cut and separated into individual chips through burn-in and sorting inspection, and after appearance inspection, it is shipped as a CSP (Chip Size Package) shipment.

  (8) The method for manufacturing a semiconductor device according to the sixth embodiment includes a step of forming a circuit on the wafer 20 to form a semiconductor device (semiconductor element circuit formation), and a step of forming a resin layer or the like on the wafer 20. And a step of collectively inspecting the electrical characteristics of the plurality of semiconductor devices formed on the wafer 20 on which the resin layer or the like is formed, using the probe card including the film-like probe described in the first to fifth embodiments. . Then, after burn-in, sorting inspection, and appearance inspection, they are shipped as full wafer CSP shipments.

  (9) In the semiconductor device manufacturing method according to the sixth embodiment, a circuit is formed on the wafer 20 to form a semiconductor device, a resin layer or the like is formed on the wafer 20, and a resin layer or the like is formed. A step of dividing the wafer 20 and a step of collectively inspecting electrical characteristics of a plurality of semiconductor devices at the wafer level divided by the probe card including the film-like probe described in the first to fifth embodiments. Have. Then, after burn-in, sorting inspection, and appearance inspection, they are shipped as a divided wafer CSP shipment.

  (10) In the semiconductor device manufacturing method according to the sixth embodiment, a circuit is formed on the wafer 20 to form a semiconductor device, a resin layer or the like is formed on the wafer 20, and a resin layer or the like is formed. And a step of collectively inspecting electrical characteristics of a plurality of semiconductor devices at the wafer level divided by the probe card including the film-like probe described in the first to fifth embodiments. . After that, it is shipped as a CSP shipment product through burn-in, sorting inspection, a process of cutting the wafer and separating it into semiconductor elements (dicing), and appearance inspection.

  In the step of inspecting the electrical characteristics of the semiconductor device in the manufacturing method of the semiconductor device described above, by using the probe sheet structure described in the first to fifth embodiments, the pressing force with a low load of several tens mN or less is used. Further, the tip position accuracy of the contact terminal 5 is high, and an inspection having a stable contact resistance value and good transmission characteristics can be realized.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  The present invention can be widely applied to probe card and semiconductor device manufacturing methods.

It is sectional explanatory drawing for improving the contact characteristic of a film-form probe. It is sectional explanatory drawing for improving the contact characteristic of a film-form probe. It is sectional explanatory drawing for improving the contact characteristic of a film-form probe. It is explanatory drawing which shows the planar arrangement | sequence of the probe group of a film-form probe. It is the figure which showed the relative load applied to an electrode for every position of an electrode when it contacts an electrode with the film-form probe of the arrangement | sequence shown in FIG. It is principal part sectional drawing of the film-form probe which concerns on one embodiment of this invention. It is principal part sectional drawing of the film-form probe which concerns on one embodiment of this invention. It is principal part sectional drawing explaining the manufacturing method of the film-form probe which is one embodiment of this invention. FIG. 9 is a fragmentary cross-sectional view of the membrane probe during a manufacturing step following that of FIG. 8; FIG. 10 is a fragmentary cross-sectional view of the membrane probe during a manufacturing step following that of FIG. 9; It is principal part sectional drawing in the manufacturing process of the membranous probe following FIG. It is explanatory drawing which shows the planar arrangement | sequence of the probe group of a film-form probe. It is explanatory drawing which compares the force with which each probe of the probe group of a film-form probe pushes the electrode of a chip | tip. It is principal part sectional drawing explaining the manufacturing method of the film-form probe which is other embodiment of this invention. FIG. 15 is a fragmentary cross-sectional view of the membrane probe during a manufacturing step following that of FIG. 14; FIG. 15 is a fragmentary cross-sectional view of the membrane probe during a manufacturing step following that of FIG. 14; It is a principal part top view in the manufacturing process of the film-form probe which is other embodiment of this invention. FIG. 15 is a fragmentary cross-sectional view of the membrane probe during a manufacturing step following that of FIG. 14; It is a principal part top view in the manufacturing process of the film-form probe which is other embodiment of this invention. It is a principal part top view in the manufacturing process of the film-form probe which is other embodiment of this invention. It is principal part sectional drawing of the film-form probe which is other embodiment of this invention. It is principal part sectional drawing explaining the manufacturing method of the film-form probe which is other embodiment of this invention. FIG. 23 is a fragmentary cross-sectional view of the membrane probe during a manufacturing step following that of FIG. 22; It is explanatory drawing which shows the observation method of the contact state of the film-form probe which is one embodiment of this invention, and the electrode of a wafer. It is explanatory drawing which showed the observation result of the contact state of the film-like probe and wafer electrode which were observed with the observation method shown in FIG. It is process drawing which shows an example of the test | inspection process of a semiconductor device. It is a flowchart which shows the general example of the flow of the test | inspection process which judges the quality of the performance of a circuit after circuit formation in the manufacturing process of LSI. It is the cross-sectional schematic of the probe card using a metal needle. It is a principal part perspective view (partially fractured) figure of the probe of a film | membrane form. It is the cross-sectional schematic of the probe card using the probe of a film | membrane form. (A)-(e) is principal part sectional drawing explaining the principal part of the manufacturing process of the probe of a film-form state. It is principal part sectional drawing which shows the structure of the element and wiring of LSI. (A)-(c) is explanatory drawing which shows the contact operation to the electrode by the probe using a metal needle.

Explanation of symbols

1 Wiring 2 Sheet 3 Push Plate 4 Pad 5 Contact Terminal 6 Elastomer 7 Contactor Row 8 Probe Group 9 Protrusion 10 Wafer 11 Electrode 12 Force 20 Wafer 21, 22 Polyimide Layer 31 Contactor Row 32 Probe Group 36 Protrusion Pattern 37 Glass Plate 39 Optical Microscope 40 Probe 42 Interference fringe 101 Solder 102 Circuit board 103 Probe (probe)
104 Resin 105 Insulating film 106 Probe sheet 107 Support plate 108 Spring 109, 110 Wiring 111 Through hole 112 Bump 113 Ground layer 114 Hole 115 Silicon wafer 116 Plating base film 117 Hard metal film 117A Resist pattern 118 Resin film 122 Semiconductor element 123, 125 Interlayer insulating layer 124, 126, 127, 128 Wiring 130 Electrode 131 Oxide film 132 Probe 133 New surface 134 Metal scrap P101 to P105

Claims (16)

A plurality of contact terminals that come into contact with a plurality of electrodes provided on the object to be inspected, a pad formed integrally with the contact terminal, a wiring drawn from each of the pads, and a resin that covers the pad and the wiring A film-like probe having a film and a plurality of peripheral electrodes electrically connected to the wiring and connected to an electrode on an external wiring board;
On the back surface of the film-like probe opposite to the main surface where the contact terminal is exposed, the first region corresponding to the position immediately above the contact terminal is 3 μm or more higher than the surface of the surrounding film-like probe Part
A plate or sheet made of an elastic material is stacked on the back surface of the film-like probe so as to be in contact with the protrusion,
A plate made of metal or ceramic is stacked on the sheet, and the film probe, the sheet and the laminate made of the plate are incorporated in a mechanism for pressing the contact terminal against the object to be inspected. Featured probe card. The probe card according to claim 1,
The protuberance is formed by forming the pad thick and raising the resin film on the pad. The probe card according to claim 2,
The probe card, wherein the pad is formed with a thickness of 20 μm or more. The probe card according to claim 1,
The protrusion is formed by disposing a resin or metal island-like or band-like protrusion pattern in the first region on the back surface of the film-like probe. The probe card according to claim 4,
One probe pattern is formed so as to cover a plurality of the first regions. The probe card according to claim 4,
The probe card, wherein the protrusion pattern is formed with a thickness of 3 μm or more. The probe card according to claim 1,
The protrusion is formed by disposing a resin or metal island-like or band-like protrusion pattern on the pad so as to be in contact with the pad, and raising the resin film on the pad and the protrusion pattern. A probe card characterized by that. The probe card according to claim 1,
The sheet is formed from an organic material having a JIS standard rubber hardness of 30 to 70 degrees and a thickness of 30 to 200 μm.
The probe card according to claim 1, wherein when the height variation of the plurality of electrodes provided on the object to be inspected is 1 μm, the height of the protrusion is 3 μm or more. Forming a circuit and a plurality of electrodes electrically connected to the circuit on a semiconductor wafer to form a plurality of chip regions;
Using a probe card having a plurality of contact terminals that are in contact with the plurality of electrodes provided in the plurality of chip regions, the plurality of contact terminals are brought into contact with the plurality of electrodes, thereby electrically connecting the plurality of chip regions. A process for inspecting characteristics;
Dicing the semiconductor wafer and separating the plurality of chip regions for each of the plurality of chip regions,
The probe card is
The plurality of contact terminals that are in contact with the plurality of electrodes provided in the plurality of chip regions, a pad formed integrally with the contact terminal, a wiring drawn from each of the pads, the pad, and the pad A film-like probe in which a resin film that covers the wiring and a plurality of peripheral electrodes that are electrically connected to the wiring and connected to electrodes on an external wiring board are formed;
On the back surface of the film-like probe opposite to the main surface where the contact terminal is exposed, the first region corresponding to the position immediately above the contact terminal is 3 μm or more higher than the surface of the surrounding film-like probe Part
A plate or sheet made of an elastic material is stacked on the back surface of the film-like probe so as to be in contact with the protrusion,
A plate made of metal or ceramic is stacked on the sheet, and the film probe, the sheet and the laminate made of the plate are incorporated in a mechanism for pressing the contact terminal against the object to be inspected. A method of manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to claim 9,
The protrusion is formed by forming the pad thick and raising the resin film on the pad. The method of manufacturing a semiconductor device according to claim 10.
The method of manufacturing a semiconductor device, wherein the pad is formed with a thickness of 20 μm or more. In the manufacturing method of the semiconductor device according to claim 9,
The protrusion is formed by disposing a resin or metal island-shaped or band-shaped protrusion pattern in the first region on the back surface of the film-like probe. . In the manufacturing method of the semiconductor device according to claim 12,
One said pattern for protrusions is formed so that the said some 1st area | region may be covered, The manufacturing method of the semiconductor device characterized by the above-mentioned. In the manufacturing method of the semiconductor device according to claim 12,
The method for manufacturing a semiconductor device, wherein the protrusion pattern is formed with a thickness of 3 μm or more. In the manufacturing method of the semiconductor device according to claim 9,
The protrusion is formed by arranging a resin or metal island-like or band-like protrusion pattern on the pad so as to contact the pad, and raising the resin film on the pad and the protrusion pattern. A method for manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to claim 9,
The sheet is formed from an organic material having a JIS standard rubber hardness of 30 to 70 degrees and a thickness of 30 to 200 μm.
A method of manufacturing a semiconductor device, wherein the height of the protrusion is 3 μm or more when the variation in height of the plurality of electrodes provided on the object to be inspected is 1 μm.

Images