JP5707222B2 - Manufacturing method of semiconductor integrated circuit device - Google Patents

Description

  The present invention relates to a technology for manufacturing a semiconductor integrated circuit device, and more particularly to a technology effective when applied to an electrical inspection of a semiconductor integrated circuit device performed by pressing a contact terminal of a probe card against an electrode of the semiconductor integrated circuit device. is there.

  Japanese Laid-Open Patent Publication No. 2005-136246 (Patent Document 1) and International Publication No. 2006/97982 (Patent Document 2) describe a semiconductor integrated circuit which is formed by pressing a contact terminal of a probe card against an electrode pad of a semiconductor integrated circuit device. A method of electrical inspection (probe inspection) and a probe card used therefor are described.

  Japanese Unexamined Patent Application Publication No. 2007-134554 (Patent Document 3) describes a probe card having a thin film sheet in which a plurality of wiring layers are stacked on a contact terminal.

  Japanese Patent Laying-Open No. 2008-164486 (Patent Document 4) describes a probe card having a thin film sheet in which a contact terminal and a wiring are electrically connected through a through hole formed on the contact terminal.

  Japanese Patent Laying-Open No. 2005-302917 (Patent Document 5) describes a probe card in which dummy wirings that are not involved in signal transmission are arranged on a thin film sheet.

JP 2005-136246 A International Publication No. 2006/97982 JP 2007-134554 A JP 2008-164486 A JP 2005-302917 A

  There is a probe inspection as an inspection technique for a semiconductor integrated circuit device. This probe inspection includes a function test for confirming whether or not the device operates according to a predetermined function, a test for determining a non-defective product / defective product by performing a DC operation characteristic and an AC operation characteristic test, and the like. In probe inspections, probe inspections are performed in the wafer state in response to demands for wafer shipment (quality differentiation), KGD (Known Good Die) support (MCP (Multi-Chip Package) yield improvement), or total cost reduction. Technology to do is used.

  In recent years, semiconductor integrated circuit devices have become more multifunctional, and it has been promoted to create a plurality of circuits on one semiconductor chip (hereinafter simply referred to as a chip). In addition, in order to reduce the manufacturing cost of the semiconductor integrated circuit device, the semiconductor elements and wirings are miniaturized to reduce the chip area and increase the number of obtained chips per semiconductor wafer (hereinafter simply referred to as a wafer). Is underway. For this reason, not only the number of chip electrodes (test pads, bonding pads) is increased, but also the arrangement of the chip electrodes is narrowed, and the area of the chip electrodes is also reduced. When a prober having a cantilever-like contact terminal is used for the probe inspection due to the narrowing of the pitch of the tip electrode, it is difficult to install the contact terminal according to the arrangement position of the tip electrode. There is a problem that becomes.

  The inventors of the present application have studied a technique that can realize a probe inspection even for a chip having a chip electrode with a narrow pitch by using a prober having a contact terminal formed by using a manufacturing technique of a semiconductor integrated circuit device. ing. Among them, the present inventors have found the following further problems.

  That is, in the probe inspection, a plurality of contact terminals are brought into contact with a plurality of chip electrodes formed on the main surface of the wafer, so that a technique for reducing variation in contact pressure between each contact terminal and each chip electrode is required. When the variation of the contact pressure is large, the contact resistance becomes non-uniform, which causes a failure to perform an accurate electrical inspection.

  Moreover, if the contact pressure is too large, the wafer to be inspected may be damaged. From the viewpoint of preventing the wafer from being damaged, it is effective to reduce the central value (designed contact pressure) of the variation of the contact pressure. For this purpose, it is necessary to further reduce the variation margin. .

  Moreover, according to examination of this inventor, even if it applied equal load to the contact terminal arrangement | positioning area | region of the sheet | seat in which several contact terminals are formed, it turned out that the dispersion | variation in contact pressure arises. For example, the contact pressure of a contact terminal arranged at the end of a contact terminal group in which a plurality of contact terminals are arranged is higher than the contact pressure of other contact terminals. Further, in the contact terminal group, when the contact terminal group has a dense arrangement region where the plurality of contact terminals are arranged densely and a scattered arrangement region where the contact terminals are arranged scattered, the contact terminals arranged in the scattered arrangement region The contact pressure is higher than the contact pressure of the contact terminals arranged in the dense arrangement region.

  The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of reducing variations in contact pressure between a plurality of contact terminals and a plurality of chip electrodes.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, a method for manufacturing a semiconductor device which is one embodiment of the present invention includes the following steps. (A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer. (B) The wiring board on which the plurality of first wirings are formed, and the wiring board so that the tips of the plurality of contact terminals for contacting the plurality of chip electrodes are opposed to the main surface side of the semiconductor wafer. A first card having a first sheet held on the first sheet and a pressing portion that presses a contact terminal arrangement area in which the plurality of contact terminals are formed in the first sheet from the back surface of the first sheet is prepared. The process of carrying out is included. And (c) conducting an electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer.

  The first sheet includes a contact terminal forming surface on which the plurality of contact terminals are formed, and the back surface located on the opposite side of the contact terminal forming surface. Further, the first sheet is formed between the first insulating film having the contact terminal forming surface, the first insulating film and the back surface, and the plurality of first wirings and the plurality of contact terminals, A plurality of second wirings electrically connected; and a second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings. Further, the plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along the first direction in plan view. In addition, among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals extend along a direction intersecting the first direction in plan view. Be placed. Further, in plan view, among the plurality of first contact terminals, a first contact terminal disposed at an end portion of the first contact terminal group is opposite to the first contact terminal group on the first insulating terminal. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals is disposed on the film. Further, between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact terminal forming surface and the back surface of the first sheet, from one surface to the other. A slit composed of an opening penetrating up to the surface is formed along the second wiring.

  Moreover, the said edge part is arrange | positioned at the corner | angular part area | region of the said contact terminal arrangement | positioning area | region.

  The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to one aspect of the present invention, variations in contact pressure between a plurality of contact terminals and a plurality of chip electrodes can be reduced.

It is explanatory drawing which shows the outline | summary of the manufacturing flow of the semiconductor integrated circuit device which is one embodiment of this invention. It is a top view which shows the main surface side of the wafer prepared at the wafer preparation process shown in FIG. FIG. 3 is an enlarged sectional view of a part of the wafer shown in FIG. 2. It is a top view which shows one main surface side among the several semiconductor chips acquired by the individualization process shown in FIG. FIG. 2 is an explanatory view schematically showing a schematic configuration of a semiconductor integrated circuit inspection apparatus used in the probe inspection process shown in FIG. 1. It is sectional drawing which shows the whole structure of the probe card shown in FIG. It is a top view which shows the opposing surface side with the wafer of the probe card shown in FIG. It is a top view which shows the outline | summary of the wiring layout of the thin film sheet | seat shown in FIG. FIG. 8 is an enlarged plan view of a contactor arrangement region shown in FIG. 7. FIG. 10 is an enlarged plan view of a portion B in FIG. 9. It is an expanded sectional view along CC line of FIG. It is an expanded sectional view along the DD line of FIG. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet which is another embodiment with respect to FIG. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet | seat shown in FIG. FIG. 10 is an enlarged plan view of an E part in FIG. 9. It is an enlarged plan view which shows the modification of FIG. It is an expanded sectional view which shows an example of the assembly process of the thin film sheet shown in FIG. It is an expanded sectional view which shows the modification of the assembly process shown in FIG. FIG. 5 is a plan view showing a main surface side of a semiconductor chip which is a modified example with respect to FIG. 4. It is an enlarged plan view which shows the contactor arrangement | positioning area periphery of the thin film sheet | seat which is a modification with respect to FIG. It is an enlarged plan view of the F section in FIG. It is an enlarged plan view of the G section in FIG. It is an expanded sectional view along the HH line of FIG. FIG. 21 is an enlarged plan view of a portion K in FIG. 20. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet | seat shown in FIG. It is a top view which shows the outline | summary of the wiring layout of the thin film sheet which is a modification with respect to FIG. FIG. 27 is an enlarged plan view of a contactor arrangement region shown in FIG. 26. FIG. 28 is an enlarged plan view of a portion L in FIG. 27. It is an enlarged plan view which shows the back surface side of the thin film sheet shown in FIG. FIG. 30 is an enlarged sectional view taken along line MM in FIG. 29. It is an expanded sectional view which shows the state which started the press from the back surface of the thin film sheet shown in FIG. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet | seat shown in FIG. FIG. 30 is an enlarged cross-sectional view showing a state in which the contactor and the pad of the wafer are in contact with each other in the cross section along the line NN in FIG. 29. FIG. 28 is an enlarged plan view of a P part in FIG. 27. It is an enlarged plan view which shows the back surface side of the thin film sheet shown in FIG. It is an expanded sectional view along the QQ line of FIG. It is an expanded sectional view which shows the modification of the assembly process shown in FIG. It is an expanded sectional view which shows the modification of the assembly process shown in FIG. It is an expanded sectional view which shows the modification of the thin film sheet shown in FIG. It is an expanded sectional view which shows the other modification of the thin film sheet shown in FIG. FIG. 30 is an enlarged plan view schematically showing a relative positional relationship between the entire structure of the belt member shown in FIG. 29 and a contactor group. FIG. 42 is an enlarged plan view schematically showing a modified example with respect to FIG. 41. It is an enlarged plan view of the contactor arrangement | positioning area | region of the thin film sheet which is a modification with respect to FIG. FIG. 44 is an enlarged plan view of a portion L in FIG. 43. It is an enlarged plan view which shows the back surface side of the thin film sheet shown in FIG. FIG. 45 is an enlarged cross-sectional view showing a state in which the contactor and the wafer pad are in contact with each other in the cross section along the line NN in FIG. 44. It is an enlarged plan view which shows typically the relative structure of the whole structure of the strip | belt member shown in FIG. 45, and a contactor group. FIG. 48 is an enlarged plan view schematically showing a first modified example with respect to FIG. 47. FIG. 48 is an enlarged plan view schematically showing a second modified example with respect to FIG. 47. It is an enlarged plan view which shows typically the contactor arrangement | positioning area | region of the thin film sheet used when performing the electrical test | inspection process shown in FIG. 1 collectively with respect to several chip area | regions. It is an enlarged plan view which shows typically the contactor arrangement | positioning area | region of the thin film sheet used when performing the electrical test | inspection process shown in FIG. 1 collectively with respect to several chip area | regions. It is an enlarged plan view which shows typically the contactor arrangement | positioning area | region of the thin film sheet used when performing the electrical test | inspection process shown in FIG. 1 collectively with respect to several chip area | regions. It is an enlarged plan view which shows typically the contactor arrangement | positioning area | region of the thin film sheet used when performing the electrical test | inspection process shown in FIG. 1 collectively with respect to several chip area | regions. It is an enlarged plan view which shows typically the contactor arrangement | positioning area | region of the thin film sheet used when performing the electrical test | inspection process shown in FIG. 1 collectively with respect to several chip area | regions. It is an enlarged plan view which shows typically the contactor arrangement | positioning area | region of the thin film sheet used when performing the electrical test | inspection process shown in FIG. 1 collectively with respect to several chip area | regions. FIG. 55 is an enlarged plan view showing a modification of FIG. 54 of a thin film sheet used when the electrical inspection process shown in FIG. 1 is performed on a plurality of chip regions at once. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet which is another embodiment with respect to FIG.

(Description format, basic terms, usage in this application)
In the present application, the description of the embodiment will be divided into a plurality of sections for convenience, if necessary, but these are not independent from each other unless otherwise specified. Regardless of the front and rear, each part of a single example, one is a part of the other, or a part or all of the modifications. In principle, repeated description of similar parts is omitted. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It does not exclude things that contain. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but includes a SiGe (silicon-germanium) alloy, other multi-component alloys containing silicon as a main component, and other additives. Needless to say, it is also included. In addition, the term “gold plating”, “Cu layer”, “nickel plating”, etc. includes not only pure materials but also members mainly composed of gold, Cu, nickel, etc. unless otherwise specified. Shall be.

  In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  Moreover, in each figure of embodiment, the same or similar part is shown with the same or similar symbol or reference number, and description is not repeated in principle.

  In the accompanying drawings, hatching or the like may be omitted even in a cross section when it becomes complicated or when the distinction from the gap is clear. In relation to this, when it is clear from the description etc., the contour line of the background may be omitted even if the hole is planarly closed. Furthermore, even if it is not a cross section, hatching or a dot pattern may be added in order to clearly indicate that it is not a void or to clearly indicate the boundary of a region.

  In addition, before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  Probe inspection is an electrical test performed using a prober (semiconductor integrated circuit inspection apparatus) on a wafer that has been subjected to a wafer process (various processing steps for wafers to be performed before division). It means that an electrical inspection of a semiconductor integrated circuit is performed by applying the tip of a contact terminal to the electrode formed above. In the probe inspection, a non-defective product / defective product is discriminated by performing a function test for confirming whether or not the device operates according to a predetermined function, and a DC operation characteristic and an AC operation characteristic test. This is distinguished from a screening test (final test) that is performed after dividing into chips (or after packaging is completed).

  The probe card is a structure having a contact terminal that contacts a wafer to be inspected and a wiring board (wiring board). The prober or the semiconductor integrated circuit inspection device is an interface ring, a probe card, and an inspection object. An inspection apparatus having a sample support system including a wafer stage on which a wafer is placed.

  A tester (Test System) is for electrically inspecting a semiconductor integrated circuit and generates a signal such as a predetermined voltage and a reference timing.

  The tester head is electrically connected to the tester, receives the voltage and signal transmitted from the tester, generates a signal such as voltage and detailed timing to the semiconductor integrated circuit, and sends it to the probe card via a pogo pin or the like. The one that sends a signal.

  The interface ring is one that is electrically connected to a tester head and a probe card via a conductive path such as a pogo pin and sends a signal sent from the tester head to a probe card described later.

  A POGO pin or a spring probe has a structure in which a contact pin (plunger (contact needle)) is pressed against an electrode (terminal) by the elastic force of a spring (coil spring). The contact needle is adapted to make an electrical connection. For example, a spring arranged in a metal tube (holding member) transmits an elastic force to the contact pin via a metal ball.

  A thin film probe (membrane probe), a thin film probe sheet, or a thin film sheet is provided with the contact terminal (protrusion terminal) that comes into contact with the inspection object as described above and a wiring routed from the contact terminal. A thin film on which an electrode for contact is formed. The thin film sheet has, for example, a thickness of about 10 μm to 100 μm, and is similar to the case where a silicon wafer is used for manufacturing a semiconductor integrated circuit. In addition, a wiring layer and a tip portion (contact terminal) electrically connected to the wiring layer are integrally formed by a patterning technique combining etching techniques and the like. Of course, although the process is complicated, it is possible to form a part separately and combine them later.

  A contact terminal, a protruding terminal, a contactor, or a probe refers to a conductive protrusion that is in contact with an electrode (chip electrode) provided on each chip region to inspect electrical characteristics.

(Embodiment 1)
<Method for Manufacturing Semiconductor Integrated Circuit Device>
First, the overall flow of the method for manufacturing a semiconductor integrated circuit device according to the present embodiment will be described with reference to FIGS. FIG. 1 is an explanatory diagram showing an outline of the manufacturing flow of the semiconductor integrated circuit device of the present embodiment. 2 is a plan view showing the main surface side of the wafer prepared in the wafer preparation step shown in FIG. 1, FIG. 3 is an enlarged sectional view of a part of the wafer shown in FIG. 2, and FIG. 4 is shown in FIG. It is a top view which shows the one main surface side among the several semiconductor chips acquired by an individualization process.

  First, as a wafer preparation step shown in FIG. 1, as shown in FIG. 2, for example, a wafer (semiconductor wafer) WH partitioned into a plurality of chip regions 10a having a square shape in plan view is prepared. A semiconductor integrated circuit is formed in each of the plurality of chip regions 10a of the wafer WH, and a plurality of pads (electrodes, chip electrodes, electrode pads) 11 that are electrically connected to the semiconductor integrated circuit on the main surface (see FIG. 4). Is formed.

  An example of a method for forming the wafer WH shown in FIG. 2 will be briefly described with reference to FIG. 3. For example, the wafer WH is formed as follows. First, in the semiconductor substrate preparation step (see FIG. 1), the semiconductor substrate 12 having the main surface (device forming surface) 12a is prepared. Thereafter, in a semiconductor element formation step (see FIG. 1), a plurality of semiconductor elements (not shown) such as transistors and diodes are formed on the main surface 12a of the semiconductor substrate 12. Thereafter, the wiring layer 13 is laminated on the main surface 12a of the semiconductor substrate 12 in a chip wiring layer forming step (see FIG. 1). In FIG. 3, the example which laminated | stacked the several wiring layer 13 on the main surface 12a is shown. In this chip wiring layer forming step, a plurality of pads 11 are formed in the uppermost layer, and each pad 11 is electrically connected to a plurality of semiconductor elements on the main surface 12a via a plurality of wirings 13a provided in the wiring layer 13. . The plurality of wirings 13 a are insulated by an insulating film 13 b provided in the wiring layer 13. Through these steps, a plurality of semiconductor integrated circuits are formed on the main surface 12a side of the wafer WH. Thereafter, in a protective film forming step (see FIG. 1), a protective film (passivation film, insulating film) 14 is formed so as to cover the wiring layer and the pad 11. Then, an opening 14 a is formed in a part of the protective film 14, and the pad 11 is exposed from the protective film 14 in the opening 14 a. Through the above steps, a plurality of semiconductor chips 10 are formed on the wafer WH, and the wafer WH shown in FIG. 2 is obtained. The protective film (passivation film, insulating film) 14 is formed of, for example, a silicon nitride film, a silicon oxide film, or a laminated film of a silicon nitride film and a silicon oxide film. As shown in FIG. 4, in the present embodiment, a pad group (chip electrode group) in which a plurality of pads 11 are arranged along each side of a semiconductor chip 10 (chip region 10a) having a square shape in plan view. have. In other words, among the four sides constituting the outer edge of the semiconductor chip 10 (chip region 10a shown in FIG. 2), a pad group (chip electrode group) 11A in which a plurality of pads 11a are formed is arranged along the first side. The A pad group (chip electrode group) 11B in which a plurality of pads 11b are formed is disposed along the second side. A pad group (chip electrode group) 11C in which a plurality of pads 11c are formed is disposed along the third side. A pad group (chip electrode group) 11D in which a plurality of pads 11d are formed is disposed along the fourth side.

  Next, as a probe inspection process shown in FIG. 1, an electrical inspection of the wafer WH shown in FIG. 2 is performed. As shown in FIG. 1, the probe inspection process includes a probe card preparation process and an electrical inspection process. In FIG. 1, for convenience of explanation, the wafer preparation process and the probe inspection process are shown separately, but the wafer preparation process may be included in the probe inspection process. Details of the probe inspection process will be described later.

  Next, as the individualization step shown in FIG. 1, the wafer WH shown in FIG. 2 is divided into chip regions 10a, and a plurality of semiconductor chips (semiconductor integrated circuit devices) 10 shown in FIG. 4 are obtained. In this step, for example, the wafer WH is cut along the scribe regions 10b arranged between each of the plurality of chip regions 10a shown in FIG. 2 and separated into individual chip regions 10a. Through the above steps, the semiconductor chip 10 which is the semiconductor integrated circuit device of the present embodiment is obtained. The above describes the outline of the main steps among the steps of manufacturing a semiconductor chip, and various modifications can be applied.

<Semiconductor integrated circuit inspection equipment>
Next, an outline of a semiconductor integrated circuit inspection apparatus (semiconductor inspection apparatus) used in the probe inspection process shown in FIG. 1 will be described. 5 is an explanatory view schematically showing a schematic configuration of the semiconductor integrated circuit inspection apparatus used in the probe inspection step shown in FIG. 1, FIG. 6 is a cross-sectional view showing the entire structure of the probe card shown in FIG. FIG. 6 is a plan view showing a surface (main surface) facing the wafer of the probe card shown in FIG. 5. 6 is a cross-sectional view taken along line AA in FIG.

  As shown in FIG. 5, the prober (semiconductor integrated circuit inspection apparatus, semiconductor inspection apparatus) PR of the first embodiment includes a probe card PRC, a tester head THD, an interface ring IFR, a card holder CHD, a wafer stage WST, and a wafer. A chuck (wafer holder) WCH or the like is used. The tester head THD and the interface ring IFR, and the interface ring IFR and the probe card PRC are electrically connected via a plurality of pogo pins PGP, respectively, so that the tester head THD and the probe card PRC are connected to each other. They are electrically connected. The tester head THD is electrically connected to the tester T, and a voltage and a signal current necessary for probe inspection are supplied from the tester T.

  The card holder CHD mechanically connects the probe card PRC to the prober PR, and has a mechanical strength that prevents the probe card PRC from being warped by the pressure from the pogo pin PGP. In addition, wafer stage WST is disposed in the housing of prober PR, and wafer chuck WCH is disposed and fixed on wafer stage WST. The wafer WH to be inspected is fixed to the wafer chuck WCH with the main surface 12a (see FIG. 3) on which the plurality of pads 11 (see FIG. 4) are formed facing the probe card PRC.

  Next, the structure of the probe card PRC shown in FIG. 5 will be described. As shown in FIG. 6, the probe card PRC has a wiring board 1 on which a plurality of wirings 1c are formed. The probe card PRC has a thin film sheet 2 held on the wiring board 1. The thin film sheet 2 has a main surface (contact terminal forming surface) 2a on which a plurality of contactors (contact terminals) 3 are formed, and a back surface 2b located on the opposite side of the main surface 2a. The main surface 2a is a wafer WH (see FIG. 5) is held on the wiring board 1 so as to face the main surface side. Further, the probe card PRC has a pressing portion 4 that presses an area of the thin film sheet 2 where the contactors 3 are formed (contactor arrangement area 2c shown in FIG. 7) from the back surface 2b. In addition, the probe card PRC has a pressurizing unit 5 that applies a load to the pressing unit 4 and the thin film sheet 2 via the connecting jig 5a. The details of the pressing unit 4 and the pressing unit 5 will be described later.

  The wiring board 1 is a plate material having a lower surface (sheet holding surface) 1a and an upper surface (back surface) 1b located on the opposite side of the lower surface 1a, and forming a circle in plan view (see FIG. 7 for the planar shape). The wiring board 1 of the present embodiment is a so-called multilayer wiring board in which a plurality of wiring layers are laminated between a lower surface 1a and an upper surface 1b. A plurality of wirings 1c are formed in each wiring layer, and the lower surface 1a side and the upper surface 1b side are electrically connected. On the lower surface 1 a of the wiring substrate 1, a plurality of receiving portions (not shown) that are electrically connected to the plurality of wirings 1 c are formed. The plurality of receiving portions are electrically connected to a plurality of pogo (POGO) seats 1d provided on the upper surface 1b of the wiring board 1 through the plurality of wirings 1c. The pogo seat 1d is a terminal that receives a pogo pin PGP (see FIG. 5) for inputting or outputting a signal between the tester head THD (FIG. 5) and the probe card. That is, the pogo seat 1d is an external terminal of the wiring board 1 (probe card PRC). Therefore, as shown in FIG. 7, a large number of pogo seats 1 d are arranged on the upper surface side of the wiring board 1. Further, the lower surface 1a of the wiring board 1 is connected and fixed to the card holder CHD (see FIG. 5).

  The thin film sheet 2 has the main surface 2a and the back surface 2b as described above, and has a circular shape with a diameter smaller than that of the wiring substrate 1 in plan view. Although details will be described later, the thin film sheet 2 is a thin film having a base material containing, for example, a polyimide resin as a main component, and has flexibility. The thin film sheet 2 is fixed and held on the wiring board 1 by the connecting jig 6 with the back surface 2b facing the lower surface 1a of the wiring board 1. As shown in FIG. 7, the peripheral portion of the thin film sheet 2 and the region inside the peripheral portion are fixed to the wiring substrate 1 by a plurality of connection jigs 6 having a ring shape.

  In addition, an opening 1e is formed in the center of the wiring board 1. Inside the opening 1e, the opening 1e is fixed on the upper surface 1b of the wiring board 1, and in the opening 1e to a position below the lower surface 1a of the wiring board 1. An extending overhang ring 7 is arranged. The region where the plurality of contactors 3 of the thin film sheet 2 are formed is projected downward from the wiring substrate 1 by the projecting ring 7 and is disposed below the lower surface of the card holder CHD (see FIG. 5). . An adhesive ring 8 is disposed inside the overhang ring 7. The adhesive ring 8 is bonded to the back surface 2b side of the thin film sheet 2 via an adhesive (for example, an epoxy adhesive), and is connected and fixed to the pressure unit 5 via a connecting jig such as a bolt. Thereby, it is possible to prevent slack in the thin film sheet 2 when a load is applied by the pressing unit 5 or when the thin film sheet 2 is pressed by the pressing unit 4.

  The pressing portion 4 includes a plunger 4a, a pressing piece 4b as a pressing tool, and an elastomer (buffer layer) 4c disposed on the lower surface (pressing surface) side of the pressing piece 4b. The pressing unit 4 extends the thin film sheet 2 by pushing the plunger 4a from the back surface (upper surface) 2b through the push piece 4b and the elastomer 4c and pushing out the push piece 4b in the region where the contactor 3 is formed. Then, the position of the tip of each contactor 3 is adjusted so as to face the corresponding pad 11 (see FIG. 4). The plunger 4a is fixed to the housing of the probe card PRC. Further, since the wiring board 1 is also fixed to the housing of the probe card PRC, the plunger 4a is fixed to the wiring board 1 through this housing. A spring 4d is built in the plunger 4a, and a constant pressing force is transmitted to the push piece 4b, the elastomer 4c and the thin film sheet 2 through the push pin 4e by the elastic force of the spring 4d. In the first embodiment, 42 alloy can be exemplified as the material of the push piece 4b. Moreover, a silicon sheet can be illustrated as the elastomer 4c.

  Further, the pressing unit 5 includes a connecting jig 5a that connects the pressing unit 4 and the pressing unit 5, and a plurality of (two in FIG. 6) springs 5b that are fixed to the connecting jig 5a. Although not shown, the springs 5b are arranged at about 8 to 12 locations on the plane of the wiring board 1, for example. One end of the spring 5b is fixed to the wiring board 1, and the other end is fixed to the connecting jig 5a. The elastic force of the spring 5b acts on the connecting jig 5a when the contactor 3 comes into contact with the pad 11 (see FIG. 4) during probe inspection and the probe card PRC is pushed toward the pad 11. At this time, the pressing part 5 is fixed to the pressing part 4 and the adhesive ring 8, and the connecting jig 5a, the pushing piece 4b, the elastomer 4c, the adhesive ring 8 and the plunger 4a are integrated (pressure mechanism). The elastic force of the spring 5b acts to push down these integrated members toward the pad 11. For this reason, the pressing force transmitted from the spring 4 d in the plunger 4 a to the thin film sheet 2 is mainly used for stretching the thin film sheet 2.

  In the probe inspection process (see FIG. 1), after the thin film sheet 2 is held on the wiring board 1, the contactor arrangement region (contact terminal arrangement region) 2c in which a plurality of contactors 3 are formed is pressed out of the thin film sheet 2 The part 4 is pressed from the back surface 2b side through an elastomer (buffer layer) 4c. Thereby, the thin film sheet 2 is stretched, and the plurality of contactors 3 arranged on the main surface 2a are aligned at a predetermined position (positions facing the plurality of pads 11 (see FIG. 4) in the electrical inspection process). (Sheet stretching process). This sheet stretching process is performed in advance before the contactors 3 and the pads 11 (see FIG. 4) are brought into contact with each other in the electrical inspection process (see FIG. 1). For example, the sheet stretching process is included in the probe card preparation process shown in FIG. In the electrical inspection process (see FIG. 1), the elastic force of the spring 5 b of the pressurizing unit 5 is made to contact the pressing unit 4 by bringing the contactors 3 and the pads 11 (see FIG. 4) into contact with each other. Is transmitted to the plurality of contactors 3 of the thin film sheet 2 (pressurizing step).

  By the way, the thin film sheet 2 described in detail below can also be applied to a modification of the probe card PRC of the present embodiment shown in FIG. For example, the present invention can be applied to a modification in which the pressurizing unit 5 shown in FIG. 6 is not disposed and the plunger 4 a of the pressing unit 4 is fixed to the wiring board 1. In this case, load control to the pad 11 (see FIG. 4) is performed only by the plunger 4a. However, the plunger 4 a is also used to push out the push piece 4 b and cause the thin film sheet 2 to protrude downward from the lower surface 1 a of the wiring board 1. Therefore, in the present embodiment, the pressing unit 4 and the pressing unit 5 are provided in order to reliably project the thin film sheet 2 below the lower surface 1a of the wiring board 1 and bring the contactor 3 into contact with the pad 11 with a low load. The provided probe card PRC is adopted.

<Detailed structure of thin film sheet>
Next, the detailed structure of the thin film sheet 2 shown in FIGS. 6 and 7 will be described. 8 is a plan view showing an outline of the wiring layout of the thin film sheet shown in FIG. 7, and FIG. 9 is an enlarged plan view of the contactor arrangement region shown in FIG. 10 is an enlarged plan view of a portion B in FIG. 9, FIG. 11 is an enlarged sectional view taken along line CC in FIG. 10, and FIG. 12 is an enlarged sectional view taken along line DD in FIG. is there.

  As shown in FIG. 9, a plurality of contactors 3 are formed in the contactor arrangement region (contact terminal arrangement region) 2 c arranged on the main surface 2 a side of the thin film sheet 2. In the present embodiment, as shown in FIG. 4, a wafer WH (see FIG. 2) on which a plurality of pads 11 are arranged along each side of a chip region 10a that is square in plan view is inspected. For this reason, the contactor arrangement | positioning area | region 2c shown in FIG. 8 and FIG. 9 comprises a square in planar view, and the some contactor 3 is each arrange | positioned along each edge | side. In other words, a contactor group (contact terminal group) 3A in which a plurality of contactors 3a are formed is arranged along the first side among the four sides constituting the outer edge of the contactor arrangement region 2c. A contactor group (contact terminal group) 3B in which a plurality of contactors 3b are formed is disposed along a second side that intersects the first side. Further, a contactor group (contact terminal group) 3C in which a plurality of contactors 3c are formed is arranged along a third side that faces the first side. Further, a contactor group (contact terminal group) 3D in which a plurality of contactors 3d are formed is arranged along a fourth side facing the second side.

  10 to 12, the thin film sheet 2 has a polyimide film (insulating film) 22 having a main surface (contact terminal forming surface) 2a. The plurality of contactors 3 are fixed to the main surface 2 a of the polyimide film 22. Further, as shown in FIG. 10, the plurality of contactors 3a are arranged along the extending direction (the arrangement direction, the first direction) of the contactor group 3A. Each contactor 3 of the thin film sheet 2 is formed to be disposed at a position facing the plurality of pads 11 shown in FIG. In addition, in FIG. 10, among the contactor groups 3A, 3B, 3C, and 3D shown in FIG. 9, an enlarged view of the contactor groups 3A and 3D is exemplarily shown. Hereinafter, the peripheral structure of the contactor 3 will be described by taking the contactor 3a as an example. However, the peripheral structures of the contactors 3b, 3c, and 3d are the same except for the case where the structure is different.

  As shown in FIGS. 11 and 12, the plurality of contactors 3 are each made of a metal film 21. In the present embodiment, for example, a rhodium film 21a and a nickel film 21b are sequentially laminated from the lower layer. The contactor 3 is a metal film 21 patterned in a planar square shape in the thin film sheet 2, and is formed so as to protrude downward from the main surface 2 a of the thin film sheet 2. Various modifications can be applied to the shape of the contactor 3, but in this embodiment, for example, a quadrangular pyramid trapezoidal shape is formed on the lower surface of a pedestal portion formed in a prismatic shape as shown in FIGS. The formed protrusion is formed. A part of the side surface of the pedestal is covered with the polyimide film 22. Thus, by forming the pedestal portion on the protrusion of the contactor 3, the height of the contactor 3 can be increased. For this reason, when performing a probe test | inspection, the distance from the main surface 2a of the thin film sheet 2 to the front-end | tip of the contactor 3 can be lengthened. For example, in this Embodiment, the distance from the main surface 2a of the thin film sheet 2 to the front-end | tip of the contactor 3 is about 50 micrometers. Thereby, it can prevent thru | or suppress that the polyimide film 22 and the surface of the wafer WH (refer FIG. 2) which are to-be-inspected objects contact at the time of a probe test | inspection.

  The thin film sheet 2 has a plurality of wirings 23 formed between the polyimide film 22 and the back surface 2b. The plurality of wirings 23 are laminated films in which a conductor film 23a and a conductor film 23b are sequentially laminated from the lower layer. The conductor film 23a is a base conductor film for forming the wiring 23. For example, a chromium film having a film thickness of about 0.1 μm and a copper film having a film thickness of about 1 μm are sequentially deposited by sputtering or vapor deposition. A film can be formed. Further, the conductor film 23b is a main conductor film that reduces the parasitic inductance (for example, wiring resistance) of the wiring 23. For example, a copper film or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer is exemplified. Can do. The plurality of wirings 23 are covered with a polyimide film 25. In other words, in the thin film sheet 2, a wiring layer 24 including a plurality of wirings 23 and a polyimide film 25 that is an insulating film covering the wirings 23 is laminated on the polyimide film 22.

  Each of the plurality of wirings 23 is led out to a connection portion (for example, the receiving portion described above) with the wiring substrate 1 shown in FIG. 6 and is electrically connected to the plurality of wirings 1 c of the wiring substrate 1. The plurality of wirings 23 are drawn radially from the contactor arrangement region 2c shown in FIG. 6 toward the lower surface 1a of the wiring board 1, and are electrically connected to the plurality of wirings 1c on the lower surface 1a of the wiring board 1, respectively. . For example, as schematically shown in FIG. 8, the wiring 23 connected to the contactor 3 in the contactor arrangement region 2c is a direction (second direction) orthogonal to the extending direction of each contactor group from the contactor arrangement region 2c. Pulled out (extends). The distance drawn in the orthogonal direction is about 1/3 to 1/2 from the center of the thin film sheet 2 having a substantially circular planar shape. Moreover, the wiring 23 is further drawn out radially from there toward the outer edge (periphery) of the thin film sheet 2. A plurality of receiving portions (not shown) of the wiring substrate 1 shown in FIG. 6 and a plurality of wirings 23 are electrically connected in the vicinity of the peripheral edge portion of the thin film sheet 2. Further, the end portions of the plurality of wirings 23 in the contactor arrangement region 2 c extend further inward than the contactor 3. 11 and 12 show an example in which one wiring layer 24 is stacked on the polyimide film 22, the number of wiring layers 24 is not limited to this. For example, another wiring layer may be stacked on the wiring layer 24 to form a stacked structure of two or more layers. In this case, since the wiring routing space can be increased, even if the number of contactors 3 arranged in the contactor arrangement region 2c is increased, each can be electrically connected.

  The plurality of wirings 23 are electrically connected to the plurality of contactors 3, respectively. As shown in FIGS. 11 and 12, a through hole (opening) TH1 is formed on the contactor 3 of the polyimide film 22, and the contactor 3 and the wiring 23 formed on the polyimide film 22 are formed at the bottom of the through hole TH1. Are electrically connected. In the present embodiment, the through hole TH1 is formed immediately above the contactor 3. Thus, by arranging the through hole TH1 directly above the contactor 3, the arrangement space of the through hole TH1 can be reduced, so that the pitch of the contactor 3 can be reduced.

  As shown in FIG. 10, among the plurality of wirings 23, the plurality of wirings 23 connected to the plurality of contactors 3 a intersect (orthogonal) the extending direction (arrangement direction) of the contactor group 3 </ b> A in plan view. It arrange | positions so that it may extend along the direction to do. Thus, even if the arrangement pitch of the plurality of contactors 3 is clogged by extending the plurality of wirings 23 along the direction intersecting (orthogonal) with the extending direction (arrangement direction) of the contactor group 3A The wiring 23 can be efficiently drawn out. Moreover, as FIG. 8 shows, the wiring 23 is further drawn out radially toward the outer edge (periphery part) of the thin film sheet 2 from there. A plurality of receiving portions (not shown) of the wiring board 1 shown in FIG. 6 and a plurality of wirings 23 are electrically connected in the vicinity of the periphery of the thin film sheet 2. End portions of the plurality of wirings 23 in the contactor arrangement region 2 c extend further to the inside than the contactor 3. The wirings 23 of the wiring layer 24 (see FIGS. 11 and 12) are configured so that the density is uniform in order to make the stress of the thin film sheet 2 uniform.

  Further, as shown in FIGS. 8 and 10 to 12, a plurality of dummy wirings 26 are formed between the plurality of wirings 23 in the thin film sheet 2. As shown in FIG. 10, the plurality of dummy wirings 26 are formed in the wiring layer 24 laminated on the polyimide film 22, similarly to the plurality of wirings 23. In other words, the plurality of dummy wirings 26 are formed on the polyimide film 22 and covered with the polyimide film 25. As described above, the thin film sheet 2 is a thin sheet containing polyimide as a main component, and by pushing the pressing portion 4 shown in FIG. 6 downward, the thin film sheet 2 is stretched and the contactor 3 and the pad 11 (refer to FIG. 4). Adjust the position (sheet stretching process). However, when a plurality of wirings 23 are formed apart from each other in the thin film sheet 2, the behavior in which the thin film sheet 2 is stretched changes between a region where the wirings 23 are disposed and a region where the wirings 23 are not disposed, so that the wiring 23 is uniformly stretched. Becomes difficult. As a result, the thin film sheet 2 is loosened, which causes a displacement between the contactor 3 and the pad 11 (see FIG. 4). By forming a plurality of dummy wirings 26 in a region where the wiring 23 is not formed, the area of the region where the wiring 23 is not formed is reduced. Thereby, since the hardness and rigidity of the thin film sheet 2 become uniform, it is possible to prevent or suppress the occurrence of slack in the sheet stretching process.

  Since the plurality of dummy wirings 26 are not electrically connected to the plurality of contactors 3, they can be made of a non-conductive material. However, as shown in FIG. 11 and FIG. 12, the plurality of dummy wirings 26 are preferably laminated films in which a conductor film 23a and a conductor film 23b are sequentially laminated from the lower layer as in the case of the plurality of wirings 23. By making the constituent members of the wiring 23 and the dummy wiring 26 common, mechanical characteristics such as hardness and rigidity of the thin film sheet 2 can be made uniform. In addition, since the constituent members of the wiring 23 and the dummy wiring 26 are made common, when the thin film sheet 2 is formed, the plurality of wirings 23 and the plurality of dummy wirings 26 can be formed collectively. Further, since the plurality of dummy wirings 26 are not electrically connected to the plurality of contactors 3, they can be freely arranged between the regions where the plurality of wirings 23 are formed. However, in the vicinity of the contactor 3 where a plurality of wirings 23 are densely arranged, it is preferable to arrange the dummy wirings 26 along the wirings 23 from the viewpoint of efficiently arranging the dummy wirings 26.

  As shown in FIGS. 10 and 12, dummy wirings 26 are arranged along the wirings 23 between the plurality of wirings 23 in the region of the contactor group 3A. Thereby, the flatness of the back surface 2b of the thin film sheet 2 can be improved. However, when the arrangement pitch between the plurality of wirings 23 is narrow and the arrangement space for the dummy wirings 26 cannot be secured, the dummy wirings 26 may not be arranged between the plurality of wirings 23. Further, as shown in FIG. 10, in the corner region (corner portion) 2f where the plurality of contactor groups 3A and 3B intersect, the contactor of the contactor 3e disposed at the end of the contactor group 3A among the plurality of contactors 3a. A plurality of dummy wirings 26 are formed along the wirings 23 on the side opposite to the group 3A. Further, among the plurality of contactors 3b, a plurality of dummy wirings 26 are formed along the wirings 23 on the side opposite to the contactor group 3B of the contactor 3e arranged at the end of the contactor group 3B. Although not shown, a plurality of dummy wirings 26 are similarly arranged along the wirings 23 at the opposite ends of the contactor groups 3A and 3B and at both ends of the contactor groups 3C and 3D shown in FIG. ing. In addition, as shown in FIG. 9, when the contactor groups 3A, 3B, 3C, and 3D are arranged along each side of the contactor arrangement region 2c having a quadrangular planar shape as shown in FIG. An area where the extension lines of the contactor group intersect. 9 and 10, the corner region 2 f is shown with hatching. In the corner region (corner portion) 2f where the plurality of contactor groups 3A and 3B intersect, the area of the region where the plurality of wirings 23 are not formed is particularly wide, so that slack is likely to occur when the thin film sheet 2 is stretched. By arranging the wirings 26, the occurrence of this slack can be suppressed.

  Here, as shown in FIGS. 10 and 11, in the thin film sheet 2 of the present embodiment, a slit 2d is formed between the contactor 3e arranged at the end of the contactor group 3A and the dummy wiring 26. . 10 and 11, a slit 2d is formed between the contactor 3e and the dummy wiring 26 disposed adjacent to the contactor 3e. Also, as shown in FIG. 10, a slit 2d is formed between the contactor 3e disposed at the end of the contactor group 3B and the dummy wiring 26. In FIG. 10, the slit 2d is formed between the contactor 3e and the dummy wiring 26 arranged adjacent to the contactor 3e. Although not shown, between the contactor 3e and the dummy wiring 26 disposed at the end of the contactor groups 3A and 3B on the opposite side, and also on both ends of the contactor groups 3C and 3D shown in FIG. , Slits 2d are respectively formed. These slits 2d are formed of openings that penetrate from one surface to the other surface of the main surface 2a and the back surface 2b of the thin film sheet 2 shown in FIG. These slits 2d are formed along the wiring 23 (and the dummy wiring 26) arranged next to the slit 2d. The slit 2d can be formed by, for example, irradiating laser light from one surface to the other surface of the main surface 2a and the back surface 2b of the thin film sheet 2 of the thin film sheet 2. A more detailed structure of the slit 2d and the reason for forming the slit 2d will be described later.

<Examination of contactor contact pressure>
Next, a more detailed structure around the slit 2d and the reason for forming the slit 2d will be described in detail. First, the problem that occurs in the electrical inspection step shown in FIG. 1 will be described using another embodiment (comparative example) studied by the inventors of the present application, and then the detailed structure of the present embodiment will be described. FIG. 13 is an enlarged cross-sectional view showing a state in which the contactor and the pad of the wafer are brought into contact with each other using a thin film sheet which is another embodiment of FIG. The embodiment shown in FIG. 13 is the same as the present embodiment except for the structure of the back surface of the thin film sheet. Therefore, in the following description, other members of the probe card to which the thin film sheet is attached will be described with reference to FIG.

  First, the thin film sheet 100 shown in FIG. 13 is different from the present embodiment in that the slit 2d of the thin film sheet 2 shown in FIG. 11 is not formed. About another point, it is the same as that of the thin film sheet 2 of this Embodiment.

  As shown in FIG. 13, in the probe inspection process (see FIG. 1), after the sheet stretching process, the tips of the contactors 3 of the thin film sheet 100 are brought into contact with the pads 11 of the wafer WH, respectively. Perform electrical inspection of integrated circuits. In FIG. 13, an elastomer 4 c is disposed as a buffer layer between the push piece 4 b and the back surface 2 b of the thin film sheet 100 from the viewpoint of mitigating the impact at the time of contact between the contactor 3 and the pad 11. Further, from the viewpoint of improving the slidability at the adhesion interface between the pressing portion 4 and the back surface 2b of the thin film sheet 100, a polyimide sheet formed separately from the thin film sheet 100 between the elastomer 4c and the back surface 2b of the thin film sheet 100. 4f is arranged. FIG. 13 shows an example in which two polyimide sheets 4f that are formed separately from each other are stacked. That is, the contact pressure between the contactor 3 and the pad 11 is adjusted mainly by the load applied from the pressurizing unit 5 (see FIG. 6) in the pressurizing step described above, but these loads are the elastomer which is a buffer layer. It is transmitted to the thin film sheet 100 through 4c.

  Here, as shown in FIG. 6, in order to transmit the load uniformly to the contactor arrangement region 2c of the thin film sheet 100 (see FIG. 13), the push piece 4b and the elastomer 4c (and the lower layer of the push piece 4b) The polyimide sheet 4f shown in FIG. 13 arranged in the lower layer of the elastomer 4c covers a wider area than the contactor arrangement region 2c on the back surface 2b of the thin film sheet 100 (see FIG. 13). That is, as shown in FIG. 13, in the back surface 2b of the thin film sheet 100, the load transmission region that receives a load via the elastomer 4c includes the region 2e on the plurality of contactors 3 and its peripheral region (for example, the corner region 2f). ) Is included. On the other hand, the contactor 3 is in contact with the wafer WH on the main surface side of the thin film sheet 2, and the main surface side of the corner region 2 f is not in contact with the wafer WH.

  Therefore, as shown with an arrow 50 in FIG. 13, even if the load transmitted from the elastomer 4c toward the back surface 2b of the thin film sheet 2 is uniform on the back surface 2b, The transmitted load is not uniform. That is, among the plurality of contactors 3, the contactor 3 that is not arranged at the end of the contactor group is arranged with another contactor 3 on both sides, so the load transmitted from the region other than directly above the contactor 3 is It can be received in a distributed manner with the contactors 3 on both sides. On the other hand, the contactor 3e arrange | positioned at the edge part of a contactor group has the contactor 3 arrange | positioned only at one of the both sides. For this reason, in addition to the load from the region 2e on the contactor 3e, the load from the peripheral region (for example, the corner region 2f in which the plurality of dummy wirings 26 shown in FIG. 13 are formed) is transmitted. In particular, as shown in FIG. 10, the contactor 3e is disposed adjacent to a corner region (corner portion) 2f where a plurality of contactor groups 3A and 3B intersect, so that the amount of load transmitted from the corner portion is large. Become. As a result, the contact pressure between the contactor 3e disposed at the end and the pad 11 is higher than the contact pressure between the other contactor 3 and the pad 11.

  Further, when the contact pressure between the contactor 3e and the pad 11 increases, the contactor 3e bites into the pad 11 deeply, so that the contactor 3f arranged next to the contactor 3e is lifted by the reaction, and the contact pressure between the contactor 3f and the pad 11 is The contact pressure between the other contactor 3 and the pad 11 is lower. That is, the variation of the contact pressure of the plurality of contactors 3 increases.

  When the variation in the contact pressure is large, the contact resistance becomes non-uniform, causing a failure to perform an accurate electrical inspection. For example, at a location where the contact pressure is low, a signal current for inspection does not flow, causing a conduction failure (open failure). Moreover, if the contact pressure is too large, the wafer to be inspected may be damaged. From the viewpoint of preventing the wafer from being damaged, it is effective to reduce the central value (designed contact pressure) of the variation of the contact pressure. For this purpose, it is necessary to further reduce the variation margin. . Particularly in recent years, there has been a demand for further reducing the contact pressure between the contactor 3 and the pad 11 from the viewpoint of preventing damage to the wafer to be inspected during probe inspection. For example, from the viewpoint of improving the circuit operation of the semiconductor chip 10 (see FIG. 4), as the insulating film 13b, which is an interlayer insulating film, an insulating film having a relative dielectric constant lower than that of the protective film 14, for example, less than about 3.0. There is a technique using a low-k insulating film). As a method of forming the low-k insulating film, for example, there is a method of forming a silica glass material such as SiOC by a CVD (Chemical Vapor Deposition) method. In addition, for example, there is a method of forming a carbon-containing silicon oxide-based material by a CVD method, or a method of reducing the relative dielectric constant by making the insulating film have a porous structure. The low-k insulating film described above has an electrical characteristic that the relative dielectric constant is lower than that of the protective film 14, but also has a characteristic that the mechanical strength (breakage resistance) is lower than that of the protective film 14. Yes. For this reason, when the contact pressure between the contactor 3 and the pad 11 is high, the insulating film 13b and the circuit are destroyed.

<Details around the slit of the thin film sheet of the present embodiment>
Next, based on the above examination results, a more detailed structure around the slit 2d of the present embodiment and a preferred embodiment will be described. FIG. 14 is an enlarged cross-sectional view showing a state where the contactor and the pad of the wafer are brought into contact with each other using the thin film sheet shown in FIG.

  As shown in FIG. 14, in the probe inspection process (see FIG. 1) of the present embodiment, after the sheet stretching process, the tips of the contactors 3 of the thin film sheet 2 are placed on the pads 11 of the wafer WH. Electrical inspection of the semiconductor integrated circuit is performed by bringing them into contact with each other. In the present embodiment, as in the comparative example shown in FIG. 13, an elastomer 4c as a buffer layer is provided between the push piece 4b and the back surface 2b of the thin film sheet 2 from the viewpoint of mitigating the impact at the time of contact between the contactor 3 and the pad 11. Place. Further, from the viewpoint of improving the slidability at the adhesion interface between the pressing portion 4 and the back surface 2b of the thin film sheet 2, a polyimide sheet formed separately from the thin film sheet 2 between the elastomer 4c and the back surface 2b of the thin film sheet 2 4f is further arranged. FIG. 14 shows an example in which two polyimide sheets 4f that are formed separately from each other are stacked. The elastomer 4c and the polyimide sheet 4f can be simply disposed between the pressing piece 4b and the back surface 2b of the thin film sheet 2 and fixed by the pressing force of the pressing portion 4 (see FIG. 6). Then, the lower surface of the push piece 4b and the upper surface of the elastomer 4c are bonded and fixed. Thereby, the pushing piece 4b and the elastomer 4c are integrated, and a pressing tool having a buffer layer disposed on the pressing surface side is obtained. In the present embodiment, the polyimide sheet 4f is bonded and fixed to the lower surface of the elastomer 4c. As a result, the pressing piece 4b, the elastomer 4c, and the polyimide sheet 4f are integrated, and the pressing tool is provided with a polyimide film having good sliding properties with the thin film sheet 2 on the pressing surface.

  Here, in the present embodiment, the slit 2d is formed along the wiring 23 (and the dummy wiring 26) between the contactor 3e arranged at the end of the contactor group and the dummy wiring 26. On the other hand, no slit 2d is formed between the contactor 3e and the contactor 3f. And slit 2d consists of an opening part which penetrates from one side to the other side among main surface 2a and back surface 2b of thin film sheet 2. For this reason, for example, a part of the load transmitted to the corner region 2f shown in FIG. 14 is converted into a force that pushes the corner region 2f of the thin film sheet 2 downward, and is relaxed. Further, the other part of the load transmitted to the corner area 2f shown in FIG. 14 is dispersed in an area outside the slit 2d (on the outer edge side of the contactor arrangement area 2c shown in FIG. 9). For this reason, the load transmitted to the contactor 3e is a load transmitted from the region 2e on the contactor 3 and a load transmitted from a slight region up to the boundary line with the slit 2d around the load. In other words, the load transmitted to the contactor 3e can be made substantially the same as the load transmitted to the surrounding contactors 3. In other words, the slit 2d is an open end that divides a path through which a load is directly transmitted from the corner region 2f to the contactor 3e. As a result, the contact pressure between the contactor 3e and the pad 11 disposed at the end is approximately the same as the contact pressure between the other contactor 3 and the pad 11. Further, the contact pressure between the contactor 3e and the pad 11 is approximately the same as the contact pressure of the other contactor 3, so that the contact pressure between the contactor 3f and the pad 11 arranged next to the contactor 3e is reduced. 11 contact pressure. That is, variation in contact pressure between the plurality of contactors 3 and the plurality of pads 11 can be reduced.

As a result, it is possible to prevent or suppress defects in the electrical inspection process caused by variations in the contact pressures of the plurality of contactors 3. For example, it is possible to prevent or suppress the occurrence of a conduction failure (open failure) due to an extremely low load transmitted to the contactor 3f. Further, for example, it is possible to prevent or suppress the transmission load to the contactor 3e from becoming extremely high and the pads 11, the insulating film 13b, and the semiconductor integrated circuit from being destroyed. For example, when the electrical inspection of the wafer WH using the aforementioned low-k insulating film as the insulating film 13b is performed, the contact pressure of each contactor 3 needs to be set low. For example, the load at the time of contact transmitted to each contactor 3 is about 5 × 10 ⁻³ N. According to the present embodiment, even when electrical inspection is performed with a low load in this way, the margin of variation in contact pressure can be reduced, thereby preventing conduction failure and destruction of the wafer WH. Can do.

<Preferred embodiment around the slit>
Next, a preferable aspect of the slit 2d will be described. As described above, the slit 2d is an open end that divides a path through which a load is directly transmitted from the corner region 2f to the contactor 3e. However, the viewpoint of increasing the effect of dividing the load transmission path. Therefore, it is preferable that the length of the slit 2d in the extending direction is longer. As shown in FIG. 10, it is preferable to make it longer than the width of the contactor groups 3A and 3B. By forming the slit 2d long, the dividing distance of the load transmission path becomes long.

  Further, in the present embodiment, between the contactor groups 3A and 3B, a corner region 2f where the contactor groups 3A and 3B intersect (orthogonal) (regions indicated by hatching in FIGS. 9 and 10) and the contactor groups 3A and 3B are provided. Each of the slits 2d is arranged. As described above, in the thin film sheet 2 having the plurality of contactor groups 3A and 3B whose extending directions intersect (orthogonal), the slits 2d are respectively disposed between the corner region 2f and the contactor group 3A and the contactor group 3B. Is preferred. This is because the slit 2d can be disposed in the immediate vicinity of the contactor 3e disposed at the end of each of the contactor groups 3A and 3B.

  In this case, there is a limit to the length (first length) of the slit 2d from the contactor group 3A or the contactor group 3B toward the inside (center direction) of the contactor arrangement region 2c. This is because it intersects with the plurality of wirings 23 and other slits 2d connected to each contactor group. On the other hand, the length (second length) of the slit 2d from the contactor group 3A or the contactor group 3B toward the outside (outer edge direction) of the contactor arrangement region 2c is not limited or small. Therefore, the overall length of the slit 2d can be increased by making the second length longer than the first length.

  Further, the width of the slit 2d is not particularly limited from the viewpoint of the function as an open end that divides a path through which a load is directly transmitted from the corner region 2f to the contactor 3e. If the main surface 2 a to the back surface 2 b of the thin film sheet 2 are reliably penetrated, the slit 2 d can function as an open end even if the width of the slit 2 d is narrower than the wiring 23, for example. That is, the slit 2d can function as an open end regardless of its width. On the other hand, when the width of the slit 2d is increased, a large opening is formed in the corner region 2f of the thin film sheet 2. When such a large opening is formed, it can function as an open end, but it is a factor that reduces the durability of the thin film sheet 2 or an obstruction when the thin film sheet 2 is stretched without slack in the sheet stretching process described above. There is a concern that is a factor. Therefore, from such a viewpoint, the width of the slit 2d is preferably set to be equal to or smaller than the width of the wiring 23.

  Further, from the viewpoint of the function as an open end that divides a path through which a load is directly transmitted from the corner region 2f to the contactor 3e, side surfaces (slits) of the wiring 23 and the dummy wiring 26 arranged along the slit 2d. The side surface on the 2d side) may be exposed from the polyimide film 25 in the slit 2d. However, if a part of the wiring 23 and the dummy wiring 26 is exposed, the wiring 23 and the dummy wiring 26 are easily oxidized or corroded. For this reason, from the viewpoint of suppressing a decrease in reliability of the electrical test process due to oxidation and corrosion of the wiring 23 and the dummy wiring 26, as shown in FIG. 11, the wiring 23 and the dummy wiring 26 arranged next to the slit 2d. The side surface on the slit 2d side is preferably covered with the polyimide film 25.

  Further, FIG. 10 illustrates an example in which the slit 2d is disposed at the end (corner region 2f) of the contactor group where the contact pressure variation margin of the contactor 3 tends to be particularly large, but the corner region 2f (FIG. 9). In addition to the above, a slit 2d can be formed. For example, as shown in FIGS. 15 and 16, a slit 2d can be arranged in the contactor group 3A. FIG. 15 is an enlarged plan view of an E portion in FIG. 9, and FIG. 16 is an enlarged plan view showing a modification of FIG. As shown in FIG. 15, in the contactor group 3A, a plurality of contactors 3g arranged at the first interval P1 and contactors 3h arranged at a second interval P2 wider than the first interval P1 are arranged. Yes. In other words, the contactor group 3A includes a dense arrangement area in which a plurality of contactors 3g are arranged at the first interval P1, and a scattered arrangement area in which the contactors 3h are arranged at a second interval P2 wider than the first interval P1. have. As described above, since the plurality of contactors 3 are arranged so as to face the pad 11 (see FIG. 4) to be inspected, not all the contactors 3 are necessarily arranged at equal intervals. A dense arrangement area and a scattered arrangement area may coexist. Here, according to the same principle as that in which the contact pressure of the contactor 3e increases, the contact pressure of the contactor 3h arranged in the scattered arrangement region and the contactor 3g arranged at the end of the dense arrangement region is different from that of the other contactor. 3 is likely to be higher than the contact pressure. This is because the load is transmitted from the region between the contactors 3g and 3h toward the contactor 3h arranged in the scattered arrangement region and the contactor 3g arranged at the end of the dense arrangement region.

  Therefore, as shown in FIG. 15, a slit 2d is formed between the contactors 3g and 3h arranged at the second interval P2. In FIG. 15, the contactors 3g are arranged on both sides of the contactor 3h at the second interval P2, respectively, so that the slits 2d are arranged along the wirings 23 on both sides of the contactor 3h. On the other hand, no slit 2d is formed between the contactors 3g arranged at the first interval P1. Thereby, the load transmitted toward the contactor 3g arrange | positioned from the area | region between contactors 3g and 3h toward the contactor 3h and the edge part of a dense arrangement | positioning area | region can be reduced. For this reason, the load transmitted to the contactors 3g and 3h can be made comparable to the load transmitted to the surrounding contactors 3.

  Further, as shown in FIG. 16, dummy wirings 26 are arranged between the contactors 3g and 3h arranged at the second interval P2, and between the dummy wiring 26 and the contactor 3g, and between the dummy wiring 26 and the contactor 3h. It is also possible to form the slits 2d along the wirings 23 respectively. In this case, compared to the case shown in FIG. 15, the distance between the slit 2d and the contactors 3g and 3h can be reduced, so that the load transmitted to the contactors 3g and 3h can be further reduced. However, when the interval of the second interval P2 is narrow, by forming a plurality of slits 2d between the contactors 3g and 3h, the strength of the thin film sheet 2 is locally reduced and durability is reduced. There are concerns. Therefore, for example, when the second interval P2 is not more than twice the first interval P1, it is preferable to arrange one slit 2d as shown in FIG.

<Assembly process of thin film sheet>
Next, the assembly process of the thin film sheet 2 will be described. The above-described thin film sheet 2 is formed by sequentially laminating members of each layer from the plurality of contactors 3 arranged in the lowermost layer to the polyimide film 25 arranged in the uppermost layer. Hereinafter, two examples of the process of forming the thin film sheet 2 simply will be described with reference to FIGS. 17 and 18. FIG. 17 is an enlarged cross-sectional view showing an example of an assembly process of the thin film sheet shown in FIG. 18 is an enlarged cross-sectional view showing a modification of the assembly process shown in FIG.

  First, as shown in FIG. 17, a thin film sheet forming substrate (for example, a silicon substrate) 40 is prepared, and openings (holes) 40 a for forming a plurality of contactors 3 are formed on the substrate 40. Thereafter, a conductive film 41 used for plating formation of the contactor 3 and the like is formed on the substrate including the opening 40a. Thereafter, in a state where the opening 40a is masked (illustration is omitted), a thin film 42 of about 10 μm to 20 μm made of copper, for example, is formed around the opening 40a. In the structure shown in FIG. 17, the region where the thin film 42 is not formed becomes the contactor 3. Then, after removing the mask that closes the opening 40a, a mask (not shown) that covers the periphery of the opening is formed, and a conductive film that covers the surface of the contactor 3 is formed by electrolytic plating using the conductive film 41 as an electrode. A rhodium film (conductive film) 21a and a nickel film (conductive film) 21b are sequentially deposited. At this time, the rhodium film 21a and the nickel film 21b are formed following the shape of the base of the film formation region. Thereafter, after exposing the thin film 42, a mask (not shown) is formed so as to cover the nickel film 21 b, and a thin film 43 of about 10 μm to 20 μm made of, for example, copper is further formed on the thin film 42. By forming the second-layer thin film 43, a step portion of the polyimide film 22 that covers a part of the side surface of the contactor 3 later is formed. Thereafter, the mask on the nickel film 21b is removed, and a nickel film 21b is further deposited on the nickel film 21b by electrolytic plating. Through the steps up to here, the shape of the contactor 3 shown in FIGS. 10 to 12 is formed. Since the upper surface of the contactor 3 is formed following the shape of the base of the film formation region, the peripheral portion is raised more than the central portion as shown in FIG.

  Thereafter, the mask is removed, and a polyimide film 22 is formed so as to cover the contactor 3 and the above-described upper thin film 43. At this time, since the polyimide film 22 is formed following the shape of the base of the film formation region, the upper peripheral portion of the upper surface of the contactor 3 is formed higher than the surroundings as shown in FIG. Thereafter, a through hole TH1 reaching the upper surface of the contactor 3 is formed in the polyimide film 22. Subsequently, conductor films 23a and 23b are sequentially stacked on the polyimide film 22 including the inside of the through hole TH1. Thereby, the wiring 23 electrically connected to the contactor 3 is formed. In addition, dummy wirings 26 that are not electrically connected to the contactor 3 are also formed at this time. Thereafter, a polyimide film 25 is formed on the polyimide film 22, the wiring 23 and the dummy wiring 26. Thereby, the wiring layer 24 is formed. Then, when the substrate 40, the conductive film 41, and the thin films 42 and 43 are removed (for example, removed by etching), the thin film sheet 2 is obtained.

  By the way, the slit 2d shown in FIGS. 10 and 11 can be formed, for example, by irradiating the laser beam LZ from one surface to the other surface of the main surface 2a and the back surface 2b of the thin film sheet 2. Yes (laser irradiation process). When the laser light LZ is irradiated to the slit 2d formation region (between the wiring 23 and the dummy wiring 26), the polyimide films 22 and 25 in the irradiated region are removed, and an opening can be formed. For example, in the example shown in FIG. 17, the laser irradiation process is performed by irradiating the laser beam LZ from the back surface 2b side of the thin film sheet 2 before removing the substrate 40, the conductive film 41, and the thin films 42 and 43. Form. At this time, since the metal pattern such as the wiring 23 and the dummy wiring 26 is not formed in the region irradiated with the laser beam LZ, the polyimide films 22 and 25 can be easily removed. As described above, when the slit 2d is formed before the thin film sheet 2 is connected to and held by the wiring board 1 (see FIG. 6), the thin film sheet 2 formed with the slit 2d is then connected to the wiring board 1 (see FIG. 6). 6) and hold. Specifically, after forming the slit 2d, the substrate 40, the conductive film 41, and the thin films 42 and 43 shown in FIG. 17 are removed, and then the thin film sheet 2 is connected to the wiring substrate 1 (see FIG. 6) and held. Thereafter, the above-described sheet stretching process is performed, and the positions of the plurality of contactors 3 are adjusted.

  Further, the timing of the laser irradiation process is not limited to the above, and can be performed after the thin film sheet 2 is connected to and held by the wiring board 1 shown in FIG. 6 (after the sheet stretching process described above). In this case, as shown in FIG. 18, the pressing portion 4 is pressed from the back surface 2 b side of the thin film sheet 2, and the laser beam LZ is irradiated from the main surface 2 a side in a state where the thin film sheet 2 is stretched. Thus, when the laser beam LZ is irradiated in a state where the thin film sheet 2 is attached to the wiring substrate 1, openings that reach part of the polyimide sheet 4f and the elastomer 4c in the laser irradiation region are formed. Also, an opening that penetrates the elastomer 4c may be formed. That is, an opening that reaches at least a part of the elastomer 4c disposed in the upper layer of the slit 2d is formed. By removing a part or all of the buffer layer on the slit 2d, the load transmitted to the corner region 2f can be more reliably divided, so that it is equal to or more than that described with reference to FIG. In addition, it is possible to reduce the variation in the contact pressure of the plurality of contactors 3. In addition, since the slit 2d is formed after the above-described sheet stretching step, the positional deviation between the slit 2d and the pressing portion can be prevented or suppressed by maintaining the stretched state of the thin film sheet 2 thereafter. However, when the thin film sheet 2 and the wiring board 1 (see FIG. 6) are disassembled for the purpose of maintenance or the like, and the thin film sheet 2 is connected to the wiring board 1 again and held, an opening is formed in a part of the elastomer 4c. If is formed, precise alignment is required. For this reason, when reassembling after disassembling, it is preferable to replace the elastomer 4c and the polyimide sheet 4f that are bonded and fixed to the pressing portion 4 with new ones and use them in the mode shown in FIG.

(Embodiment 2)
In the first embodiment, the embodiment in which the plurality of contactors 3 are arranged in a line along the side of the contactor arrangement region 2c has been described in order to facilitate understanding of the basic technical idea. However, due to the recent demands for miniaturization and higher functionality of semiconductor integrated circuit devices, the use of narrow pitch multi-pins has been further advanced. , There is a technique (multi-row arrangement technique) in which chip electrodes (pads) are arranged in a plurality of rows, respectively. When an electrical inspection of a semiconductor integrated circuit device using this multi-row arrangement technique is performed, it is necessary to arrange a plurality of contactors in a plurality of rows corresponding to the arrangement of chip electrodes. In the present embodiment, an embodiment applied to a method for manufacturing a semiconductor integrated circuit device using a multi-row arrangement technique will be described. Note that the present embodiment is a modification in which the technique described in the first embodiment is applied. For this reason, the description which overlaps with the said Embodiment 1 is abbreviate | omitted as much as possible, and it demonstrates centering around difference with the said Embodiment 1. FIG.

  FIG. 19 is a plan view showing the main surface side of a semiconductor chip which is a modification to FIG. FIG. 20 is an enlarged plan view showing the periphery of the contactor arrangement region of the thin film sheet which is a modification to FIG. FIG. 21 is an enlarged plan view of a portion F in FIG. 20, and FIG. 22 is an enlarged plan view of a portion G in FIG. FIG. 23 is an enlarged cross-sectional view taken along line HH in FIG. FIG. 24 is an enlarged plan view of a portion K in FIG.

  A semiconductor chip 10c (chip region 10a) shown in FIG. 19 has a quadrangular shape in a plan view, and a pad group (chip electrode group) 11A, 11B, 11C, and 11D arranged along each side includes a plurality of pads. 11 are arranged in a plurality of rows. In other words, the plurality of pads 11 arranged in each of the pad groups 11A, 11B, 11C, and 11D include a plurality of pads (first row chip electrodes) 11e arranged in the first row, and a first row. And a plurality of pads (second row chip electrodes) 11f arranged in the second row located between the semiconductor chip 10c (chip region 10a) and one side thereof. Thus, by arranging the pads 11 in a plurality of rows along one side, the number of pads 11 arranged in one pad group 11A, 11B, 11C, 11D can be increased.

  For example, as shown in the enlarged view of FIG. 19, the pads 11f arranged in the second row are arranged between the pads 11e arranged in the first row along the arrangement direction of the pad group 11A. Thus, they are arranged alternately (in a so-called staggered arrangement). As described above, when the pads 11 are arranged in a plurality of rows, the layout of the wiring (see FIG. 3) connected to each pad 11 can be made efficient by adopting the staggered arrangement.

  When the plurality of pads 11 are arranged in a plurality of rows in the pad groups 11A, 11B, 11C, and 11D arranged along each side of the chip area 10a to be inspected as shown in FIG. Like the thin film sheet 31 shown in FIG. 2, the layout of the plurality of contactors 3 needs to correspond to the layout of the pad 11 to be inspected. That is, the thin film sheet 31 shown in FIG. 20 includes a contactor arrangement region 2c that forms a quadrangle in plan view. In the contactor groups (contact terminal groups) 3A, 3B, 3C, and 3D arranged along each side of the contactor arrangement region 2c, a plurality of contactors 3 are arranged in a plurality of rows. In other words, the contactors 3 arranged in the contactor groups 3A, 3B, 3C, and 3D include a plurality of contactors (first row contact terminals) 3k arranged in the first row, and the first row. And a plurality of contactors (second row contact terminals) 3m arranged in the second row located between the contactor arrangement region 2c and one side of the contactor arrangement region 2c. Further, the contactors 3m arranged in the second row are arranged alternately between the contactors 3k arranged in the first row along the arrangement direction of the contactor groups 3A, 3B, 3C, 3D. They are arranged (in a so-called staggered arrangement).

  As shown in FIG. 23, in the present embodiment, a wiring layer 24 including a plurality of wirings 23 is laminated, and a lower wiring layer 24a and an upper wiring layer 24b arranged on the polyimide film 22 are electrically connected. Connected. Each wiring layer 24 includes a plurality of wirings 23 and a polyimide film (insulating film) 25 that covers the plurality of wirings 23. A through hole (opening) TH2 is formed in the polyimide film 25 on the wiring 23 of the lower wiring layer 24a, and the upper wiring 23 and the lower wiring 23 are electrically connected to each other at the bottom of the through hole TH2. Connected. Thereby, even if the arrangement pattern of the contactor 3 is narrow pitch and multi-pin, a space for drawing out the wiring 23 can be secured. FIG. 23 shows an example in which two wiring layers 24 are stacked, but the number of wiring layers 24 is not limited to this. For example, a single-layer structure can be used as in the first embodiment. Further, for example, the wiring layer 24 can be further laminated to form a laminated structure of three or more layers. In the present embodiment, as described above, the plurality of contactors 3k in the first row and the plurality of contactors 3m in the second row are arranged in a staggered arrangement. For this reason, the wiring 23 connected to the contactor 3a in the second column is arranged between the adjacent contactors 3k arranged in the first column, and the adjacent contactors 3a arranged in the second column are arranged. Between them, a wiring 23 connected to the contactor 3m in the first row is arranged. In this way, by extending the plurality of wirings 23 along the direction intersecting (orthogonal) with the extending direction (arrangement direction) of the contactor group 3A, it is possible to secure a space for drawing out the wirings 23.

  The thin film sheet 31 shown in FIG. 23 can be assembled by applying the <Thin Film Sheet Assembly Process> of the first embodiment. That is, in <Assembly process of thin film sheet>, after the polyimide film 25 is formed on the polyimide film 22, the wiring 23, and the dummy wiring 26, and before the process of removing the substrate 40 (see FIG. 12), the polyimide A through hole TH 2 reaching the upper surface of the wiring 23 is formed in the film 25. Subsequently, conductor films 23a and 23b are sequentially laminated on the polyimide film 25 including the inside of the through hole TH2. As a result, the upper layer wiring 23 electrically connected to the lower layer wiring 23 is formed. At this time, dummy wirings for the upper wiring layer 24b are also formed. Thereafter, a polyimide film 25 is further formed on the polyimide film 25, the wiring 23, and the dummy wiring. Thereby, the upper wiring layer 24b is formed. Then, when the substrate 40, the conductive film 41, and the thin films 42 and 43 shown in FIG. 12 are removed (for example, removed by etching), the thin film sheet 31 shown in FIG. 23 is obtained. Further, the laser irradiation step described in the first embodiment is performed from the back surface 2b side of the thin film sheet 31 before removing the substrate 40, the conductive film 41, and the thin films 42 and 43, as in the example shown in FIG. It can be formed by irradiation with light LZ. Further, as a modification thereof, as shown in the example shown in FIG. 18, it can be performed after the above-described sheet stretching process.

  As shown in FIG. 20, when the contactor groups 3A, 3B, 3C, and 3D are arranged in a plurality of rows, the positions of the end portions of the rows arranged in the contactor groups 3A, 3B, 3C, and 3D may be different. is there. For example, as shown in FIGS. 21 and 22, in the contactor group 3A, among the plurality of contactors 3k arranged in the first row, the contactors 3p (FIG. 21) arranged at the end of the arrangement in the first row. The position of the reference) is inside the array from the position of the contactor 3n (see FIG. 22) disposed at the end of the array of the second row among the plurality of contactors 3m disposed in the second column. ing. In other words, in the vicinity of the end of the contactor group 3A, the first row of contactors 3k is not arranged, and a plurality of second row contactors 3m are arranged in a row. In this case, the technology described in the first embodiment can be applied by regarding the contactors 3k and 3m arranged in each row as one row. That is, among the contactors 3n and 3p arranged at the end of each row, the slit 2d described in the first embodiment is formed between the contactor 3n arranged at the end of the contactor group 3A and the dummy wiring 26. To do. On the other hand, as shown in FIG. 21, the slit 2d shown in FIG. 22 is not formed between the contactor 3p and the wiring 23 or the dummy wiring 26 arranged adjacent to the contactor 3p.

  The contactor 3k in the first row is not arranged around the contactor 3n shown in FIG. For this reason, if the slit 2d is not formed, the load from the corner region 2f collects in the contactor 3n as in the contactor 3e described in the first embodiment (see FIG. 10), and the pad 11 (FIG. 19). Contact pressure) tends to be high. On the other hand, the contactor 3p shown in FIG. 21 is arranged at the end of the contactor 3k in the first row, but since a plurality of contactors 3m are arranged in the vicinity, the peripheral region (for example, hatching is applied to FIG. 21). The load from the region 2g) shown here is distributed and transmitted to the contactor 3p and the plurality of contactors 3m. Therefore, even if the slit 2d shown in FIG. 22 is not formed, the contact pressure of the contactor 3p is unlikely to be higher than the contact pressure of the contactor 3n. In view of this, the slit 2d is formed between the contactor 3n and the dummy wiring 26 shown in FIG. As described in the first embodiment, the slit 2d serves as an open end that divides a path through which a load is directly transmitted to the contactor 3 from a region where the contactor 3 is not formed directly below, such as the corner region 2f. It is valid. However, when an extremely large number of slits 2d are formed, there is a concern that the durability of the thin film sheet 2 may be reduced, or the thin film sheet 2 may be stretched without slack. That is, according to this Embodiment shown in FIG. 21 and FIG. 22, the dispersion | variation in contact pressure can be reduced and the fall of durability of a thin film sheet can be suppressed. Moreover, since it is possible to suppress the occurrence of slack when the thin film sheet 2 is stretched, the plurality of contactors 3 can be correctly brought into contact with the corresponding plurality of pads 11 (see FIG. 19).

  Further, as shown in FIGS. 15 and 16 described in the first embodiment, the contactors arranged in each row are also applied when the technique for forming the slit 2d in the middle of the contactor group is applied in the present embodiment. It is possible to apply 3k and 3m as one line. That is, as shown in FIG. 24, the slit 2d is formed in a region where the distance between the contactor 3k and the contactor 3m arranged in the periphery is wider than the others among the plurality of contactors 3k and 3m. As shown in FIG. 24, in the first row of the contactor group 3A, a region (densely arranged region) 2h in which a plurality of contactors 3k are arranged at a first interval P1 and a first region wider than the first interval P1. An area 2 (a scattered arrangement area) 2k in which the contactors 3k are arranged at an interval P2 of 2 is included. In the second row of the contactor group 3A, there are a region (a densely arranged region) 2m in which a plurality of contactors 3m are arranged at a third interval P3, and a fourth interval P4 that is wider than the third interval P3. An area (scattered arrangement area) 2n in which the contactors 3m are arranged is included.

  Then, the region 2k, which is the first row scattered arrangement region, and the region 2n, which is the second row scattered arrangement region, are arranged adjacent to each other along the extending direction (arrangement direction) of the contactor group 3A. In this case, similar to the contactor 3h (see FIGS. 15 and 16) described in the first embodiment, the loads from the regions 2k and 2n are collected in the contactor 3r arranged in the scattered region, and the pad 11 (see FIG. 19)) is likely to increase. On the other hand, when the region 2h, which is the dense arrangement region of the first row, is arranged next to the region 2n of the second row, the load from the region 2n is distributed to the plurality of contactors 3 around the region 2n. Therefore, the contact pressure is less likely to be higher than that of the contactor 3r. Therefore, in the present embodiment, the first row region (scattered arrangement region) 2k where the contact pressure is particularly high and the second row region (scattered arrangement region) 2n are adjacent (overlapping) in the adjacent region. A slit 2 d is formed between the contactors 3. On the other hand, the first row region (scattered placement region) 2k and the second row region (crowded placement region) 2m are adjacent (overlapping) regions, or the first row region (crowded placement region). No slit 2d is formed in a region where 2h and the second row region (spread arrangement region) 2n are adjacent (overlapping). In other words, the contactors 3k and 3m arranged in each row are regarded as one row, and the slit 2d is formed in a region where the arrangement interval between the adjacent contactors 3 is particularly wide. For example, in FIG. 24, the slit 2d is not formed in the region where the plurality of contactors 3m or the contactors 3k are arranged between the contactors 3k or the contactors 3m adjacent to each other via the scattered arrangement region. On the other hand, when the number of contactors 3m or contactors 3k arranged between adjacent contactors 3k or contactors 3m via the scattered arrangement region is one or less, slits 2d are formed. Thereby, the dispersion | variation in contact pressure can be reduced and the fall of durability of a thin film sheet can be suppressed. In addition, in the above-described sheet stretching process, it is possible to suppress the occurrence of slack when the thin film sheet 2 is stretched, so that the plurality of contactors 3 are properly brought into contact with the corresponding pads 11 (see FIG. 19). Can do.

  As described above, when the contactor groups 3A, 3B, 3C, and 3D are arranged in a plurality of rows, the contactors 3k and 3m arranged in each row are regarded as one row and described in the first embodiment. Technology can be applied. However, as a modified example, the technique described in the first embodiment as the independent contactor groups in the first and second rows arranged in the contactor groups 3A, 3B, 3C, and 3D, respectively. It can also be applied. For example, in FIG. 21, there is a slit (similar to the slit 2d shown in FIG. 22) between the contactor 3p disposed at the end of the contactor 3k disposed in the first row and the dummy wiring 26 disposed adjacent thereto. However, illustration is omitted). In addition, for example, in FIG. 24, the slit 2d can be formed also in a region where a plurality of contactors 3m or contactors 3k are arranged between the contactors 3k or contactors 3m adjacent to each other via the scattered arrangement region. In these cases, by forming the slits 2d individually according to the arrangement pitch of the contactors 3 arranged in each row, the variation in the contact pressure of each contactor 3 can be reduced more precisely.

  The present embodiment is the same as the first embodiment except for the differences described above. Therefore, although the overlapping description is omitted, for example, <preferred aspect around the slit> can be applied by replacing the thin film sheet 2 described in the first embodiment with the thin film sheet 31.

(Embodiment 3)
In the first embodiment and the second embodiment, the technology that can reduce the variation in the contact pressure of the contactors 3 arranged in the end portions of the contactor group or in the scattered arrangement region has been described. In the present embodiment, a technique for reducing variations in contact pressure of a plurality of contactors 3 including a plurality of contactors 3 arranged in a dense arrangement region will be described. Since the present embodiment is an applied technology of the technique described in the first embodiment or the second embodiment, the description overlapping with the first embodiment or the second embodiment is omitted as much as possible. The difference from the first embodiment will be mainly described.

  The thin film sheet 2 (see FIG. 12) described in the first embodiment and the thin film sheet 31 (see FIG. 23) described in the second embodiment are a plurality of metal patterns and a resin film such as polyimide from the main surface 2a side. Are sequentially stacked. For this reason, the upper surface (the back surface 2b of the thin film sheets 2 and 31) of the polyimide film 25 disposed in the uppermost layer is an uneven surface following the metal pattern (for example, the contactor 3 and the wiring 23) disposed in the lower layer. . And since the through hole TH1 is formed on the contactor 3 and the wiring 23 and the contactor 3 are electrically connected on the contactor 3, the region 30a of the back surface 2b arranged on the contactor 3 protrudes as compared with the surroundings. Yes. In other words, in the back surface 2b of the thin film sheet 2, the height of the region 30a located on the plurality of contactors 3 is higher than the height of the region 30b around the region 30a.

  FIG. 25 is an enlarged cross-sectional view showing a state where the contactor and the pad of the wafer are brought into contact with each other using the thin film sheet 31 shown in FIG. As shown in FIG. 25, in the probe inspection process (see FIG. 1), after the sheet stretching process, the tips of the contactors 3 of the thin film sheet 31 are brought into contact with the pads 11 of the wafer WH, respectively. Perform electrical inspection of integrated circuits. In the probe inspection process, when the contactor 3 of the thin film sheet 31 having the region 30a protruding from the periphery and the pad 11 are brought into contact with each other, as shown with an arrow 51 in FIG. 25, the elastomer 4c disposed on the region 30a. Part of the fluid flows (moves) around the area 30a, and the thickness of the elastomer 4c on the contactor 3 is reduced. As a result, in the protruding region 30a on the contactor 3, the reaction force from the elastomer 4c increases, and the load transmitted per unit area increases. The amount of this transmission load varies depending on the height difference between the region 30a and the peripheral region. For example, if the height difference between the region 30a and the peripheral region is large, the flow amount of the elastomer 4c flowing in the peripheral region increases, and the transmission load increases. On the other hand, if the height difference between the region 30a and the peripheral region is small, the flow amount of the elastomer 4c flowing to the peripheral region is small, and the transmission load is small. Here, it is considered that the load transmitted to the region 30a on each contactor 3 can be made uniform if the area of the region 30a and the height difference with the peripheral region are made uniform on all the contactors 3. . However, since the restrictions on the processing accuracy or the layout of the contactor 3 and the wiring 23 are increased, it is difficult to make the area of the region 30a and the height difference with the peripheral region uniform on all the contactors 3. It is. For this reason, the contact pressure of the contactor 3 and the pad 11 varies according to the variation in the height difference between the region 30a arranged on each contactor 3 and the peripheral region. Such variation in contact pressure of the contactor 3 due to the height difference of the back surface 2b occurs, for example, even in a region where a plurality of contactors 3 are arranged at equal intervals. As described in the first embodiment, when the variation in the contact pressure is large, the contact resistance becomes non-uniform and the electrical inspection cannot be performed accurately.

  Next, the inventor of the present application considered that the cause of the above problem is that the flatness of the back surface 2b is low, and studied another embodiment shown in FIG. The thin film sheet 101 shown in FIG. 57 has the uppermost polyimide film 102 having the back surface 2b formed thicker than the lower polyimide film 25, and the back surface 2b is flat. 31. Since the polyimide resin constituting the polyimide film 102 is a softer material than the metal material, the uneven surface following the metal pattern of the lower layer can be improved by forming it thick. That is, the back surface 2b can be flattened. However, according to the study by the present inventors, the present inventors have newly found that even when the thin film sheet 101 is used, the contact pressure between the contactor 3 and the pad 11 varies.

  The cause is considered to be as follows. That is, when the back surface 2b is flattened, the amount of load transmitted per unit area of the back surface 2b can be made uniform, but it is transmitted to each contactor 3 by the layout of the contactor 3 and the wiring 23 of the thin film sheet 101. This is because the amount of load varies. As described above, the plurality of contactors 3 are formed on the main surface 2a side so as to be disposed at positions facing the pads 11 of the wafer WH to be inspected. Since the arrangement pattern of the plurality of pads 11 on the wafer WH is determined by the requirements on the circuit formed in the chip region, not all of them are necessarily arranged at equal intervals. For this reason, the plurality of contactors 3 formed on the main surface 2a of the thin film sheet 101 are not all arranged at equal intervals. For example, in one contactor group 3A (see FIG. 27 described later), the contactors 3 adjacent to each other are arranged at a first interval (a dense arrangement region) and arranged at a second interval wider than the first interval. May be provided (spread arrangement area). Also, for example, in one contactor group 3A, the contactor 3 arranged at the end of the contactor group 3A has another contactor 3 arranged next to one, but the contactor 3 is arranged next to the opposite side. Not placed. Thus, the contactor 3 arranged in the scattered arrangement region or the contactor 3 arranged at the end of the contactor group 3A has a higher contact pressure than the contactor 3 arranged in the dense region. This is because it is difficult to disperse the load transmitted to the periphery of the contactor 3 at the scattered arrangement region and the end of the contactor group 3A, and therefore, the load transmitted to one contactor 3 is larger than the dense arrangement region. Thus, the present inventors have newly found that the variation in the contact pressure cannot be sufficiently suppressed simply by flattening the back surface 2b of the thin film sheet 101.

  Based on the above-mentioned problems, the inventor of the present application has studied a technique for suppressing variations in contact pressure of the plurality of contactors 3 and found the configuration of the present embodiment. Hereinafter, the structure of the thin film sheet 32 will be described with reference to FIGS. 26 to 30. 26 is a plan view showing an outline of a wiring layout of a thin film sheet which is a modification to FIG. 8, and FIG. 27 is an enlarged plan view of the contactor arrangement region shown in FIG. 28 is an enlarged plan view of a portion L in FIG. 27, FIG. 29 is an enlarged plan view showing the back side of the thin film sheet shown in FIG. 28, and FIG. 30 is an enlarged cross section taken along line MM in FIG. FIG. The technique described below is the case where a plurality of contactors 3 are arranged in one row as described in the first embodiment, and the plurality of contactors 3 are arranged in a plurality of rows as described in the second embodiment. This can be applied to both cases. In the present embodiment, an embodiment applied to a thin film sheet in which contactors 3 are arranged in a plurality of rows as in the second embodiment will be described as a representative example. Further, in this embodiment, the structure of the wafer and chip area to be subjected to electrical inspection is the same as the wafer WH shown in FIG. 2 and the chip area 10a shown in FIG. Illustration is omitted.

  The thin film sheet 32 of the present embodiment and the thin film sheet 31 (see FIG. 23) described in the second embodiment are adjacent to the region 30a on the back surface 2b of the thin film sheet 32, for example, as shown in FIG. The difference is that a protrusion 32a having a surface higher than the height of the region 30a is formed.

  Referring to FIG. 30, the thin film sheet 32 has a polyimide film (insulating film) 33 having a back surface 2b. The polyimide film 33 is disposed on the wiring layer 24. Specifically, it is arranged so as to cover the upper wiring layer 24a (polyimide film 25). A band member 34 formed in a band shape is disposed between the upper wiring layer 24 a (polyimide film 25) and the polyimide film 33. Since the polyimide film 33 covering the upper surface of the upper polyimide film 25 is formed following the pattern of each member arranged below the polyimide film 33, the periphery of the region overlapping the band member 34 of the polyimide film 33 is formed. The protrusion 32a protrudes upward from the other regions. That is, the thin film sheet 32 shown in FIG. 30 has a structure in which the band member 34 and the polyimide film 33 are further laminated on the wiring layer 24a of the thin film sheet 31 shown in FIG. The height of the protrusion 32a formed following the band member 34 is higher than the height of the region 30a on the contactor 3. In other words, among the back surface 2b of the thin film sheet 32, the height of the plurality of regions 30a located on the plurality of contactors 3 is lower than the height of the protruding portion 32a and between the plurality of regions 30a and the protruding portion 32a. It is higher than the height of the region 30b.

  Further, as shown in FIG. 29, the band member 34 and the protruding portion 32a formed following the band member 34 are adjacent to the contactor group 3A along the extending direction (arrangement direction) of the contactor group 3A in plan view. It is arranged to extend. The band member 34 and the protruding part 32a are not formed in a region where the band member 34 and the protruding part 32a overlap the slit 2d in plan view. In other words, the band member 34 and the protruding portion 32a are divided by the slit 2d in a region overlapping the slit 2d in plan view. In addition, although illustration by an enlarged view is abbreviate | omitted, the strip | belt member 34 and the protrusion part 32a formed according to this are each contactor group 3A, each adjacent to each contactor group 3A, 3B, 3C, 3D shown in FIG. It is formed along the extending direction of 3B, 3C, 3D. Thereby, the protrusion part 32a can be more reliably interposed in the transmission path of the load from the press part 4 (refer FIG. 31 and FIG. 32 mentioned later) to the contactor 3. FIG. In FIG. 29, the wiring 23 shown in FIG. 28 is not shown in order to facilitate understanding of the positional relationship between the slit 2d and the band member 34.

  Next, the operation when the probe inspection process shown in FIG. 1 is performed using the thin film sheet 32 will be described. FIG. 31 is an enlarged cross-sectional view showing a state where pressing is started from the back surface of the thin film sheet shown in FIG. 30, and FIG. 32 shows a state where the contactor and the pad of the wafer are brought into contact with each other using the thin film sheet shown in FIG. It is an expanded sectional view. FIG. 33 is an enlarged cross-sectional view showing a state where the contactor and the pad of the wafer are in contact with each other along the line NN in FIG. First, as the sheet stretching step described in the first embodiment, the back surface 2b side (see FIG. 30) of the contactor arrangement region 2c of the thin film sheet 32 shown in FIG. By pushing down the contactor arrangement region 2c of the thin film sheet 32, the thin film sheet 32 is expanded without slack following the pressing portion. At this time, as shown in FIG. 31, on the back surface 2b, the upper surface of the protruding portion 32a arranged at the highest position and the pressing portion 4 (specifically, the lower surface of the polyimide sheet 4f arranged in the lowermost layer) are in close contact. When the upper surface of the protruding portion 32a is in close contact with the pressing portion 4 and further pressed, the polyimide sheet 4f of the pressing portion 4 is deformed following the shape of the protruding portion 32a, and the elastomer 4c is softer than the protruding portion 32a and the polyimide sheet 4f. The polyimide sheet 4f on the protrusion 32a bites into the projection. In other words, a part of the elastomer 4c on the protrusion 32a flows (deforms) around the protrusion 32a. On the other hand, since the region between the two protrusions 32a is at a lower position than the protrusion 32a, deformation due to the flow of the elastomer 4c on the contactor 3 can be suppressed. For this reason, the pressing force applied from the pressing portion 4 to the thin film sheet 32 is the largest on the protruding portion 32a, and the pressing force applied to the region 30a on the contactor 3 sandwiched between the protruding portions 32a is the protruding portion 32a. Smaller than above. For example, as shown in FIG. 32, a gap may be formed between the region 30a and the polyimide sheet 4f.

  In the electrical inspection process shown in FIG. 1, as shown in FIG. 32, a plurality of contactors 3 and the pads 11 are brought into contact with each other. At this time, the thin film sheet 32 is pressed from the pressing part 5 (see FIG. 6) to the pressing part 4. Further, a load (contact load) is applied via. The magnitude of this contact load is the largest on the protrusion 32a, as with the pressing force, and the contact load applied to the region 30a on the contactor 3 sandwiched between the protrusions 32a is greater than on the protrusion 32a. Get smaller. That is, the load (contact load) applied to the thin film sheet 32 is mainly received by the protruding portion 32a from the pressing portion 4 and transmitted to the contactor 3 through the protruding portion 32a. In other words, the load applied to the thin film sheet 32 is not transmitted from the region 30a on the contactor 3 to the contactor 3 in the direction orthogonal to the back surface 2b, but from the protruding portion 32a disposed next to the region 30a. Is transmitted to the contactor 3 in an oblique direction. For this reason, even if it is a case where the area | region 30a on the contactor 3 protrudes compared with the circumference | surroundings, the dispersion | variation in the load transmitted to the contactor 3 can be reduced. In this way, by disposing the protruding portion 32a away from the contactor 3 in plan view, variation in the load transmitted to the contactor 3 can be reduced, and the contact pressure of each contactor 3 can be made uniform. .

Moreover, as shown in FIG. 29, the protrusion part 32a is arrange | positioned so that it may extend along the extension direction (arrangement direction) of the contactor group 3A in which the several contactor 3a is arrange | positioned. For this reason, for example, as shown in FIG. 33, the entire upper surface (back surface 2 b) of the protruding portion 32 a formed continuously over the plurality of wirings 23 is in close contact with the polyimide sheet 4 f that is the pressing tool of the pressing portion 4. . That is, a load transmitted from the pressing portion 4 is received by the entire protrusion 32a extending along the extending direction (arrangement direction) of the contactor group 3A (see FIG. 11). Then, the load transmitted to the protrusions 32a is distributed and transmitted to the plurality of contactors 3 sandwiched between the two protrusions 32a. That is, it is possible to reduce variations in the contact pressures of the plurality of contactors 3 sandwiched between the two protrusions 32a. For example, in each of the plurality of contactors 3 (seven or three contactors 3k, 3m in the range shown in FIG. 29) arranged in the dense arrangement region in FIG. 29, 2 arranged on both sides of these contactors 3 are arranged. The load is distributed and transmitted from the protrusion 32a of the book. Thereby, the contact pressure of each contactor 3 can be equalized. That is, the contact pressure of the contactors 3 arranged in the scattered arrangement region and the contact pressure of the contactors 3 arranged in another region (for example, a dense region) can be made uniform. As a result, it is possible to prevent or suppress defects in the electrical inspection process caused by variations in the contact pressures of the plurality of contactors 3. For example, since the load is distributed to the plurality of contactors 3 and the load is transmitted, the transmission load to some of the contactors 3 becomes extremely low, and it is possible to prevent or suppress the occurrence of a conduction failure (open failure). Further, for example, since the load is dispersed and transmitted to the plurality of contactors 3, the transmission load to some of the contactors 3 becomes extremely high, and the pads 11, the insulating film 13b (see FIG. 3) and the semiconductor integrated circuit are destroyed. Can be prevented or suppressed. For example, when the electrical inspection of the wafer WH using the aforementioned low-k insulating film as the insulating film 13b is performed, the contact pressure of each contactor 3 needs to be set low. For example, the load at the time of contact transmitted to each contactor 3 is about 5 × 10 ⁻³ N. According to the present embodiment, even when electrical inspection is performed with a low load in this way, the margin of variation in contact pressure can be reduced, thereby preventing conduction failure and destruction of the wafer WH. Can do.

  Moreover, as shown in FIG. 29, the protrusion part 32a is not formed in the area | region where the slit 2d is arrange | positioned on the extension line | wire of the protrusion part 32a. In other words, the protrusion 32a is divided by the slit 2d. For this reason, as described in the first embodiment or the second embodiment, the load transmission path from the periphery of the contactor 3 where the contact pressure is likely to be higher than the other can be divided by the slit 2d. For example, the load transmitted to the contactor 3r arrange | positioned at the scattered arrangement | positioning area | region of FIG. 29 can be reduced. For this reason, the contact pressure of the contactor 3r can be made equal to the contact pressure of the other contactors 3.

  In other words, in the present embodiment, the contactor arranged in the region sandwiched between the protrusions 32a is formed on both sides of the contactor group by forming the protrusions 32a along the extending direction (arrangement direction) of the contactors. The contact pressure of 3 can be made uniform. Further, since the protrusion 32a is not formed in the region where the slit 2d is formed, the contact pressure of the contactors 3r arranged in the scattered arrangement region can be made equal to the contact pressure of the other contactors 3. As a result, variation in contact pressure of the plurality of contactors 3 can be reduced.

  Moreover, although the area | region which forms the slit 2d in a contactor group was demonstrated in FIGS. 28-30, the strip | belt member 34 and the protrusion part 32a are the edge parts of each contactor group 3A, 3B, 3C, 3D shown in FIG. That is, it extends to the periphery of the corner region 2f of the contactor arrangement region 2c. 34 is an enlarged plan view of a P portion in FIG. 27, and FIG. 35 is an enlarged plan view showing the back side of the thin film sheet shown in FIG. FIG. 36 is an enlarged cross-sectional view along the line QQ in FIG. 35, the wiring 23 shown in FIGS. 34 and 36 is not shown in order to facilitate understanding of the positional relationship between the slit 2d and the band member 34.

  As shown in FIG. 35, the band member 34 and the protruding portion 32a extend to the end portions of the contactor groups 3A and 3B, that is, to the periphery of the corner region 2f of the contactor arrangement region 2c. Although not shown in an enlarged view, as shown in FIG. 27, the band member 34 and the protruding portion 32a are adjacent to the contactor groups 3A, 3B, 3C, and 3D, on both ends of the contactor groups 3A, 3B, 3C, and 3D. Each part. As shown in FIG. 35, the contact pressure of the plurality of contactors 3a and 3b arranged in the contactor groups 3A and 3B is increased by extending the band member 34 and the protruding portion 32a to the end portions of the contactor groups 3A and 3B. Can be aligned. The slit 2d described in the first embodiment or the second embodiment is formed between the contactor 3e arranged at the end of the contactor groups 3A and 3B and the dummy wiring 26, respectively. Consists of an opening penetrating from one surface to the other of the main surface 2a and the back surface 2b of the thin film sheet 2 (see, for example, FIG. 36).

  Further, as shown in FIGS. 35 and 36, no protrusion 32a is formed in the region where the slit 2d is formed. In FIG. 35, the band member 34 and the protrusion 32a following the band member 34 are also formed in the corner region 2f, but the band member 34 and the protrusion 32a are divided by the slit 2d. For this reason, since load transmission from the corner | angular area | region 2f to the contactor 3n arrange | positioned at the edge part of contactor group 3A, 3B can be prevented or suppressed, the contact pressure of the contactor 3n arrange | positioned at an edge part is reduced. The contact pressure of the other contactor 3 can be made uniform.

  By the way, as shown in FIG. 27, the band member 34 and the projecting portion 32a are located on the inner side of the contactor groups 3A, 3B, 3C, and 3D and the contactor groups with respect to the contactor arrangement region 2c forming a quadrangle in plan view. It is formed outside 3A, 3B, 3C and 3D, respectively. As shown in FIG. 35, the band member 34 and the protruding portion 32a arranged on the outside overlap with the region where the slit 2d is formed in plan view, and thus are separated by the slit 2d. On the other hand, the band member 34 and the protruding portion 32a arranged on the inner side do not overlap with the area where the slit 2d is formed in plan view, and thus are separated by the slit 2d. As shown in FIG. 34, in order to avoid crossing a plurality of wirings 23 and other slits 2d connected to each contactor group, the inside of the contactor arrangement region 2c (see FIG. 27) from each contactor group 3A, 3B (see FIG. 27) The length of the slit 2d toward the center direction is shorter than the length of the slit 2d toward the outer side (outer edge direction) of the contactor arrangement region 2c from the contactor groups 3A and 3B. For this reason, as shown in FIG. 35, the band member 34 and the projecting portion 32a arranged on the inner side do not overlap with the region where the slit 2d is formed in plan view. In such a case, as shown in FIG. 35, the inner band member 34 arranged along the contactor group 3A and the inner band member 34 arranged along the contactor group 3B may be connected. In particular, as shown in FIG. 35, when the lengths of the contactor groups 3A and 3B are increased and the inner belt members 34 arranged along these contact with each other, the connection of them makes it possible to distribute the load. To preferred.

<Preferred embodiment of projecting portion peripheral structure>
Next, a preferable aspect around the protrusion 32a shown in FIGS.

  First, in the present embodiment, as shown in FIG. 29, the protrusions 32a are arranged on both sides of the contactor group 3A so as to extend along the contactor group 3A in plan view. As a modified example of FIG. 29, it is possible to adopt a mode in which the protruding portion 32a is arranged on either one of the adjacent sides of the contactor group 3A (not shown). In this case, since the protruding portion 32a is arranged at a position higher than the region 30a on the contactor 3, the amount of flow of the elastomer 4c (see FIG. 32) on the region 30a is larger than that of the thin film sheet 100 shown in FIG. , Can be reduced. Further, by extending the projecting portion 32a along the extending direction (arrangement direction) of the contactor group 3A, the load transmitted to the projecting portion 32a is applied to the plurality of contactors 3 arranged next to the projecting portion 32a. Can be dispersed. Therefore, the variation of the contact pressure of each contactor 3 can be reduced as compared with the comparative example shown in FIG. However, from the viewpoint of more reliably interposing the protruding portion 32a in the load transmission path from the pressing portion 4 (see FIG. 32) to the contactor 3, as shown in FIG. 29, the protruding portions are adjacent to both sides of the contactor group 3A. It is preferable to arrange 32a. In particular, when the contactors 3 are arranged in a plurality of rows in one contactor group 3A as shown in FIG. 29, there is a concern that the contact pressure may vary in the row of contactors 3 far from the protrusion 32a. It is particularly preferable that the protrusions 32a are arranged on both sides of each.

  In addition, the protrusion 32a is harder than the elastomer 4c and the polyimide sheet 4f from the viewpoint of more reliably interposing the protrusion 32a in the load transmission path from the pressing portion 4 (see FIG. 32) to the contactor 3. Preferably). Further, from the viewpoint of improving the dispersibility of the load received by the protrusion 32a to the plurality of contactors 3, the protrusion 32a preferably has higher rigidity than the polyimide films 25 and 26 (see FIG. 30). In order to satisfy such a condition, in the present embodiment, as shown in FIG. 30, a band member 34 made of a metal film is formed between the polyimide film 33 and the polyimide film 25, and the protruding portion follows the band member 34. 32a is formed. The band member 34 is made of the same material as the wiring 23. That is, the band member 34 is a laminated film in which the metal film 34a and the metal film 34b are sequentially laminated from the lower layer. The metal film 34a is a base metal film for forming the band member 34. For example, a chromium film having a thickness of about 0.1 μm and a copper film having a thickness of about 1 μm are sequentially deposited by a sputtering method or a vapor deposition method. Can be formed. Further, the metal film 34b is a main metal film for securing a film thickness necessary for the band member 34. For example, a copper film or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer is exemplified. Can do. As described above, the band member 34 formed of the metal films 34a and 34b is harder than the elastomer 4c and the polyimide sheet 4f (is hardly deformable), and therefore, a load transmission path from the pressing portion 4 (see FIG. 32) to the contactor 3. In addition, the protruding portion 32a can be more reliably interposed. Further, since the band member 34 is made of the metal films 34a and 34b having higher rigidity than the polyimide films 25 and 26, the dispersibility of the load received by the protrusion 32a to the plurality of contactors 3 can be improved. In the present embodiment, since the band member 34 is not electrically connected to the wiring 23 or the contactor 3, the band member 34 is not required to have conductivity. Therefore, the band member 34 can be made of, for example, a resin material as long as it is a material harder than the elastomer 4c and the polyimide sheet 4f, or a material higher in rigidity than the polyimide films 25 and 26. Moreover, when the belt member 34 is made of a material having higher rigidity than the polyimide films 25 and 26, wrinkles are generated in the thin film sheet 32 when the thin film sheet 32 is pressed by the pressing portion 4 (see FIG. 6). Can be suppressed.

  Further, from the function of transmitting the load in a distributed manner to the plurality of contactors 3, for example, the side surface (the side surface and the end surface on the slit 2d side) of the band member 34 shown in FIG. 30 is exposed from the polyimide film 33 in the slit 2d. You can also However, if a part of the belt member 34 is exposed, the belt member 34 is easily corroded. Therefore, from the viewpoint of preventing this, as shown in FIG. 30, it is preferable that the side surface on the slit 2 d side of the band member 34 disposed adjacent to the slit 2 d is covered with a polyimide film 33.

  In addition, the slit 2d of the thin film sheet 32 is irradiated with laser light from one surface to the other surface, for example, of the main surface 2a and the back surface 2b of the thin film sheet 32 as in the above embodiment. It can be formed (laser irradiation process). However, in this embodiment, since the band member 34 made of a metal film is formed, the following mode is preferable. 37 is an enlarged cross-sectional view showing a modification of the assembly process shown in FIG. 17, and FIG. 38 is an enlarged cross-sectional view showing a modification of the assembly process shown in FIG. For example, as shown in FIG. 37 which is a modified example of FIG. 17, the uppermost wiring layer 24b is laminated on the wiring layer 24a, and the band member 34 including the metal films 34a and 34b (see FIG. 30) and the same. A polyimide film 33 that covers is laminated. Thereafter, before removing the substrate 40, the conductive film 41, and the thin films 42 and 43, the thin film sheet 32 can be formed by irradiating the laser beam LZ from the back surface 2b side. Further, for example, as shown in FIG. 38 which is a modified example of FIG. 18, after the thin film sheet 32 is connected to and held on the wiring board 1 shown in FIG. 6, the thin film sheet 32 is pressed from the back surface 2b side (see above). Sheet stretching step), the thin film sheet 32 can be stretched and irradiated with laser light LZ from the main surface 2a side.

  Here, in any of FIGS. 37 and 38, it is preferable that the band member 34 is not formed in the region where the laser light LZ is irradiated, that is, the region where the slit 2d is formed. Even when the band member 34 made of a metal film is formed in the region to be irradiated with the laser beam LZ, if the laser beam LZ having higher energy than that in the case where the slits 2d are formed in the polyimide films 25 and 33 is irradiated. This can be cut. However, if the polyimide films 25 and 33 are irradiated with the high-energy laser light LZ necessary for cutting the band member 34 made of a metal film, the film may be processed excessively. Therefore, from the viewpoint of preventing or suppressing processing defects in the laser irradiation process, it is preferable that the band member 34 is not formed in the region irradiated with the laser light LZ, that is, the region where the slit 2d is formed. In order to perform the laser irradiation process in this manner, in this embodiment, for example, in the process of forming the band member 34 made of the metal films 34a and 34b (see FIG. 30), a mask is previously formed in a region where a slit is to be formed. The band member 34 is formed in a state where (not shown) is arranged. Thus, if the polyimide film 33 covering the band member 34 is laminated after removing the mask, the band member 34 is not formed in the region irradiated with the laser beam LZ as shown in FIGS. No thin film sheet 32 is obtained. As a result, as shown in FIG. 30, the side surface on the slit 2 d side of the band member 34 arranged next to the slit 2 d is covered with the polyimide film 33.

  Incidentally, according to the assembling process shown in FIG. 38, the opening reaching the polyimide sheet 4f and the elastomer 4c in the laser irradiation region is formed as in the assembling process shown in FIG. 18 described in the first embodiment. The Also, an opening that penetrates the elastomer 4c may be formed.

  30 to 38, the band member 34 is covered with the polyimide film 33. However, as a modification, the band member 34 is exposed on the back surface 2b side of the thin film sheet 32 as in the thin film sheet 36 shown in FIG. The structure can also be made. FIG. 39 is an enlarged cross-sectional view showing a modification of the thin film sheet shown in FIG. In the thin film sheet 36 shown in FIG. 39, the polyimide film 33 shown in FIG. 30 is not formed, and the upper surface of the polyimide film 25 arranged in the uppermost layer is the back surface 2b of the thin film sheet 32. In this case, the band member 34 formed on the polyimide film 25 becomes the protruding portion 32a. However, from the viewpoint of protecting the band member 34 and the polyimide sheet 4f (see FIG. 32), it is preferable to cover the band member 34 with a polyimide film 33 as a protective film as shown in FIG. For example, corrosion of the belt member 34 and peeling from the polyimide film 25 can be prevented or suppressed. Further, for example, damage to the polyimide sheet 4f (see FIG. 32) due to direct rubbing with the belt member 34 can be prevented.

  30 to 38 show an example in which the region 30a on the contactor 3 on the back surface 2b of the thin film sheet 32 is higher than the surrounding region 30b. However, as a modification, a structure in which the protruding portion 32a is formed on the flattened back surface 2b as in a thin film sheet 38 shown in FIG. 40 is an enlarged cross-sectional view showing another modification of the thin film sheet shown in FIG. According to the thin film sheet 38 shown in FIG. 40, the protrusions 32a are formed similarly to the thin film sheet 32 shown in FIGS. 30 to 38, whereby the load received by the protrusions 32a is distributed and transmitted to the plurality of contactors 3. Therefore, the variation in contact pressure of each contactor 3 can be reduced.

  Moreover, in order to receive a load by the protrusion part 32a, the thickness from which the height of the protrusion part 32a becomes the highest position in the back surface 2b of the contactor arrangement | positioning area | region 2c (refer FIG. 9) is preferable. For this reason, the thickness of the band member 34 is preferably equal to or greater than the thickness of the wiring 23. Particularly preferably, it is preferable to form the band member 34 thicker than the wiring 23 as shown in FIG.

  Further, as shown in FIG. 29, when the band member 34 is arranged on both sides of the contactor group 3A, it is preferable that the distance between the band member 34 and the contactor group 3A is equal in plan view. For example, in FIG. 29, of the two band members, the distance L1 from the band member 34 arranged next to one of the contactor groups 3A to the contactor group 3A is the band arranged next to the other of the contactor groups 3A. It is equal to the distance L2 from the member 34 to the contactor group 3A. As shown in FIG. 29, the distance L1 and the distance L2 are constant in the extending direction (arrangement direction) of one contactor group 3A. Thereby, since the distance of the some contactor 3 and the protrusion part 32a can be kept substantially constant, the load which the protrusion part 32a received can be disperse | distributed to a several contactor with sufficient balance. Further, specific values of the particularly preferable distance L1 and distance L2 vary depending on the size (planar dimension) of the contactor 3, but in the present embodiment, the distances L1 and L2 are the widths of one contactor 3. However, it is 0.5 times or more and 2 times or less. For example, the width of the contactor 3 (the length in the direction orthogonal to the extending direction (arrangement direction) of the contactor group 3A in plan view) is about 50 μm, whereas the distances L1 and L2 are about 25 μm to 100 μm. It is an arbitrary value. When the values of the distances L1 and L2 become extremely large, the region 30a on the contactor 3 on the back surface 2b is likely to receive a load from the pressing portion 4 (see FIG. 32), and a load component that does not pass through the protruding portion 32a is generated. On the other hand, when the values of the distances L1 and L2 are extremely small, dispersion of dispersibility is likely to occur when the load received by the protrusions 32a is distributed to the plurality of contactors 3. For this reason, it is particularly preferable that the distances L1 and L2 be 0.5 times or more and 2 times or less with respect to the width of one contactor 3.

  As shown in FIG. 29, when the band members 34 are arranged on both sides of the contactor group 3A, it is preferable that the band widths of the band members 34 are made uniform in a plan view. For example, in FIG. 29, of the two band members 34, the band width W1 of the band member 34 arranged next to one of the contactor groups 3A and the band member 34 arranged next to the other of the contactor groups 3A. The band width W2 is equal. The band width W1 and the band width W2 are constant in the extending direction (arrangement direction) of one contactor group 3A. Thereby, the load amount received by each protrusion part 32a can be made comparable. Further, in order to make the load transmitted from the pressing portion 4 (see FIG. 32) to the plurality of contactors 3 via the protruding portions 32a become the main loads that determine the contact pressure, the band widths W1 and W2 are: It is preferable to make it wide. In the present embodiment, the band widths W1 and W2 are wider than the wiring width of the wiring 23 (see FIG. 10) disposed in the lower layer, and are set to be approximately the same as the width of one contactor 3. For example, the wiring width of the wiring 23 shown in FIG. 10 (the wiring width of the region extending on the contactor 3) is about 20 to 25 μm, whereas the band widths W1 and W2 are about 40 to 60 μm. That is, the band widths W1 and W2 are approximately the same as the width of the contactor 3 (the length in the direction orthogonal to the extending direction (arrangement direction) of the contactor group 3A in plan view). In this way, by forming the band widths W1 and W2 wide, it is possible to reduce the influence of the load transmitted to the plurality of contactors 3 without using the protrusions 32a. If the band widths W1 and W2 are set to be equal to or larger than the width of one contactor 3, the influence of the load transmitted to the plurality of contactors 3 without passing through the protrusions 32a can be reduced. The upper limits of the widths W1 and W2 are not particularly limited. Therefore, for example, when the thin film sheet 32 is pressed by the pressing portion 4 (see FIG. 6), the contactor arrangement region 2c (see FIG. 27) is expanded without slack, or the thin film sheet 32 and the probe card PRC (see FIG. 6). Can be appropriately selected from the viewpoint of handling in the process of assembling.

  As shown in FIGS. 28 and 29, in the contactor group 3A, a plurality of contactors 3 are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group 3A. This is to correspond to the arrangement pattern of the pads 11 (see FIG. 19) in the chip area 10a (see FIG. 19) to be inspected. As described above, when the contactors 3 are arranged in a plurality of rows in one contactor group 3A, as a modification of FIG. 29, a band member 34 is further provided between the contactors 3 in the first row and the contactors 3 in the second row. It is also conceivable to arrange the (projecting part 32a). That is, it is also possible to adopt a structure in which three or more belt members 34 (projections 32a) are arranged along the extending direction (arrangement direction) of the contactor group 3A. However, as shown in FIG. 29, when the distance between the contactor 3 in the first row and the contactor 3 in the second row is short, the belt member 34 is arranged between the contactors 3 in each row. There is a possibility that the distance between the belt member 34 and the contactor 3 is shortened, and the variation in contact pressure between the contactors 3 cannot be sufficiently reduced. Further, from the viewpoint of reducing the planar area of the semiconductor chip 10 (see FIG. 4), when the pads 11 (see FIG. 4) are arranged in a plurality of rows, the first row of pads 11 and the second row. It is preferable to arrange the pads 11 close to each other. Therefore, as shown in FIG. 29, even when the contactors 3 are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group 3A, they are arranged in a plurality of rows. More preferably, the band member 34 is not disposed between the contactors 3. Even in this case, if the distance between the contactor 3 in the first row and the contactor 3 in the second row is short (in FIG. 29, about 58 μm), the distance between the two belt members 34 arranged on both sides of the contactor group 3A is small. Since the load can be distributed and transmitted to the contactors 3 in each row arranged in the row, variation in contact pressure can be reduced. Of course, when the distance between the contactor 3 in the first row and the contactor 3 in the second row is long (for example, more than twice the width of one contactor 3), the contactor 3 in the first row and the second contactor 3 A band member 34 (projecting portion 32a) can be further disposed between the contactors 3 in the row.

  In addition, the thin film sheet 32 shown in FIG. 27 includes contactor groups 3B, 3C, and 3D other than the contactor group 3A shown in FIG. 29 among a plurality of contactor groups arranged along each side of the quadrangular contactor arrangement region 2c. In addition, a plurality of contactors 3 are also arranged. As shown in FIG. 27, the contactor group B arranged along the side intersecting (orthogonal) with the contactor group 3A includes a plurality of contactors 3b along the extending direction (arrangement direction) of the contactor group 3B. They are arranged in rows (2 rows). Further, in the contactor group B arranged along the side facing the contactor group 3A, a plurality of contactors 3c are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group 3C. ing. In the contactor group D arranged along the side facing the contactor group 3B, a plurality of contactors 3d are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group 3D. ing. Further, on both sides of the contactor groups 3B, 3C, and 3D, similarly to both sides of the contactor group 3A, the band members 34 and the protruding portions 32a corresponding thereto are respectively arranged. Thus, when arrange | positioning contactor group 3A, 3B, 3C, 3D along each edge | side of the contactor arrangement | positioning area | region 2c, respectively, the strip | belt member arrange | positioned on both sides of each contactor group 3A, 3B, 3C, 3D, respectively. It is preferable to make the distance L3 (refer FIG. 29) between 34 equal. By making the distance L3 between the belt members 34 equal, the distances L1 and L2 (see FIG. 29) can be made uniform in each of the contactor groups 3A, 3B, 3C, and 3D. As a result, it is possible to reduce variations in contact pressure between the contactors 3a, 3b, 3c, and 3d arranged in the contactor groups 3A, 3B, 3C, and 3D.

  Further, as shown in FIG. 41, as the entire structure of the band member 34 and the protruding portion 32a, a plurality of band members 34 arranged inside and outside the contactor groups 3A, 3B, 3C, and 3D are arranged in each contactor arrangement region 2c. Along each side, they are arranged in a ring shape. FIG. 41 is an enlarged plan view schematically showing the relative positional relationship between the entire structure of the belt member shown in FIG. 29 and the contactor group. In FIG. 41, the contactor groups 3A, 3B, 3C, and 3D form a quadrilateral in plan view. Each of the band members 34 arranged along the contactor groups 3A, 3B, 3C, and 3D is arranged on the inner annular body 28a arranged on the inner side of the quadrilateral and on the outer side of the quadrilateral in plan view. This constitutes a part of the outer annular body 28b. In other words, in FIG. 41, the band member 34 is arranged in the corner area 2f of the contactor arrangement area 2c that forms a quadrangle in plan view.

  As a modification of the overall structure of the band member 34 and the protrusion 32a shown in FIG. 41, each corner of the inner annular body 28a and the outer annular body 28b (corner region 2f) as in the thin film sheet 37 shown in FIG. ), The belt member 34 may not be disposed. FIG. 42 is an enlarged plan view schematically showing a modification to FIG. In the thin film sheet 37 of FIG. 42, the band member 34 of the outer annular body 28b and the band member 34 of the inner annular body 28a are not disposed in the corner area 2f of the contactor arrangement area 2c, and the inner annular body 28a and the outer annular body 28b are respectively arranged. Each band member 34 constituting a part of each is an independent member. In this case, the contact pressure of each contactor 3 (see FIG. 27) can be controlled in units of contactor groups 3A, 3B, 3C, and 3D. Further, by not forming the band member 34 at the corner of the inner annular body 28a that becomes the inflection point in the extending direction, the band member 34 arranged along each of the contactor groups 3A, 3B, 3C, and 3D. Mutual influence can be reduced.

  The present embodiment is the same as the second embodiment except for the differences described above. Therefore, although the overlapping description is omitted, the thin film sheet 2 and the thin film sheet 31 can be replaced with the thin film sheet 32 and applied to the techniques described in the first embodiment and the second embodiment.

(Embodiment 4)
In the third embodiment, a technique for comprehensively reducing variations in contact pressure of a plurality of contactors 3 including a plurality of contactors 3 arranged in a scattered area and a plurality of contactors 3 arranged in a dense arrangement area. Explained. However, the technique for forming the slits 2d in the scattered arrangement region described in the first and second embodiments and the technique for forming the protrusions 32a described in the third embodiment can be applied independently. it can. In the present embodiment, an embodiment in which the slit 2d is not formed will be described as a modification of the third embodiment. Since the present embodiment is an application technique of the technique described in the third embodiment, the description overlapping with the third embodiment is omitted as much as possible, and the description will focus on differences from the third embodiment. . In addition, the technology described below is based on the case where a plurality of contactors 3 are arranged in one row as described in the first embodiment, and the plurality of contactors 3 are arranged in a plurality of rows as described in the second embodiment. This can be applied to both cases. In the present embodiment, an embodiment applied to a thin film sheet in which contactors 3 are arranged in a plurality of rows as in the second embodiment will be described as a representative example.

  FIG. 43 is an enlarged plan view of a contactor arrangement region of a thin film sheet which is a modification to FIG. 44 is an enlarged plan view of a portion L in FIG. 43, and FIG. 45 is an enlarged plan view showing the back side of the thin film sheet shown in FIG. FIG. 46 is an enlarged cross-sectional view showing a state in which the contactor and the pad of the wafer are in contact with each other along the line NN in FIG. FIG. 47 is an enlarged plan view schematically showing the relative positional relationship between the entire structure of the belt member shown in FIG. 45 and the contactor group. 48 and 49 are enlarged plan views schematically showing first or second modifications to FIG. 47, respectively. The enlarged cross section along the line MM shown in FIG. 45 is the same as that shown in FIG. 30 described in the third embodiment, and the illustration is omitted. 45, the wiring 23 and the dummy wiring 26 shown in FIG. 44 are not shown in order to facilitate understanding of the planar positional relationship between the protruding portion 32a and the contactor 3.

  The thin film sheet 39 of the present embodiment shown in FIGS. 43 to 49 is different in that the slit 2d included in the thin film sheet 32 described in the third embodiment is not formed. That is, as can be seen from a comparison between FIGS. 44, 45, and 46 and FIGS. 28, 29, and 33 described in the third embodiment, the thin film sheet 39 of the fourth embodiment has a scattered arrangement region (FIG. 44). The slits 2d (see FIG. 28) are not formed in the regions 2n and 2k shown in FIG. As shown in FIG. 44, in plan view, the band member 34 and the protrusion 32a arranged on both sides of the contactor group 3A are not divided by the slit 2d (see FIG. 28), and the extending direction of the contactor group 3A It arrange | positions so that it may extend continuously along (array direction). In other respects, the thin film sheet 39 is the same as the thin film sheet 32 described in the third embodiment. As described above, even in the case of the thin film sheet 39 in which the slit 2d is not formed, the variation in the load transmitted to the contactor 3 can be reduced by disposing the protruding portion 32a away from the contactor 3 in plan view. The contact pressure of each contactor 3 can be made uniform. Further, by arranging the protrusions 32a so as to extend continuously along the extending direction (arrangement direction) of the contactor group 3A, the load transmitted to the protrusions 32a is reduced to the two protrusions 32a. Are distributed and transmitted to a plurality of contactors 3 sandwiched between them. That is, it is possible to reduce variations in the contact pressures of the plurality of contactors 3 sandwiched between the two protrusions 32a. For example, in FIG. 44, the load is distributed and transmitted to each of the plurality of contactors 3 (11 contactors 3 in the range shown in FIG. 44) from the two protrusions 32a arranged on both sides of these contactors 3. Is done. Thereby, the contact pressure of the contactor 3 arrange | positioned at a scattered arrangement | positioning area | region and the contact pressure of the contactor 3 arrange | positioned at another area | region (for example, crowded area | region) can be equalize | homogenized. As a result, it is possible to prevent or suppress defects in the electrical inspection process caused by variations in the contact pressure of each of the plurality of contactors 3 as described in the third embodiment.

  Further, as shown in FIG. 44, in the case where the protruding portion 32a is left in the region where the slit 2d is formed (not divided by the slit 2d), variation in the load transmitted to the contactor 3 can be reduced, and the contactor 3 It is possible to make the contact pressure uniform, and it is possible to remove an obstruction factor when the thin film sheet 2 is stretched without slackness in the sheet stretching process.

  In addition, as shown in FIG. 47, as the entire structure of the band member 34 and the projecting portion 32a, the four band members 34 arranged inside the contactor groups 3A, 3B, 3C, and 3D are connected and integrated, respectively. In some cases, the present invention may be applied to a structure in which four belt members 34 arranged outside the groups 3A, 3B, 3C, and 3D are connected and integrated. In FIG. 47, the contactor groups 3A, 3B, 3C, and 3D form a quadrilateral in plan view. Each of the band members 34 arranged along the contactor groups 3A, 3B, 3C, and 3D is arranged on the inner annular body 28a arranged on the inner side of the quadrilateral and on the outer side of the quadrilateral in plan view. This constitutes a part of the outer annular body 28b. In such a case, since the loads received by the projecting portions 32a arranged along the contactor groups 3A, 3B, 3C, and 3D influence each other, the distances L3 and L4 between the belt members 34 are particularly affected. , L5 and L6 are preferably equal.

  In addition, as shown in FIG. 47, when the outer annular body 28b is continuously formed without being divided in the middle, it is connected at the corners where the extended lines of each side of the outer annular body 28b intersect. They are connected via an oblique arrangement portion 28c arranged obliquely with respect to each side so that the sides are not orthogonal. A corner portion where the two sides of the outer annular body 28b are connected becomes an inflection point at which the extending direction of the belt member 34 changes. For this reason, the mutual influence of each band member 34 is relieved by providing the diagonal arrangement | positioning part 28c. However, in the case where the distances L1 and L2 (for example, see FIG. 29) between the band member 34 and the contactor groups 3A, 3B, 3C, and 3D are changed by providing the diagonally arranged portion 28c, the obliquely arranged portion 28c is provided. Preferably not. For example, contactor groups 3A, 3B, 3C, and 3D are arranged in the vicinity of the corners where the sides of the inner annular body 28a shown in FIG. 47 intersect. For this reason, the diagonal arrangement | positioning part is not provided in the corner | angular part where each edge | side of the inner side annular body 28a crosses. Thereby, the distance L2 (for example, refer FIG. 29) of the band member 34 and the contactor groups 3A, 3B, 3C, and 3D can be made uniform in the extending direction of each band member 34 constituting the inner annular body 28a.

  As a modification of the overall structure of the band member 34 and the protrusion 32a shown in FIG. 47, as shown in FIG. 48, the band member 34 is divided at each corner of the inner annular body 28a and the outer annular body 28b ( (Not connected) structure. In this case, since each band member 34 becomes an independent member, the contact pressure of each contactor 3 can be controlled in units of contactor groups 3A, 3B, 3C, and 3D. In addition, by not forming the band member 34 at the corner that becomes the inflection point, the mutual influence of the band members 34 arranged along each of the contactor groups 3A, 3B, 3C, and 3D can be reduced. . As described above, when the band member 34 is divided, the plurality of contactors 3a, 3b, 3c, and 3d arranged in the contactor groups 3A, 3B, 3C, and 3D are the same as those arranged at the end portion. It is preferable to extend to the position or further to the corner side. Thereby, since the load of the several contactor 3a, 3b, 3c, 3d arrange | positioned at each contactor group 3A, 3B, 3C, 3D can each be disperse | distributed, the dispersion | variation in contact pressure can be reduced.

  As a modification of the embodiment in which each of the inner annular body 28a and the outer annular body 28b shown in FIG. 48 is divided, a structure in which one of the inner annular body 28a and the outer annular body 28b is divided may be employed. For example, in FIG. 49, each contactor group 3A, 3B, 3C, 3D is long and extends to the vicinity of the corner of the inner annular body 28a. Therefore, in FIG. 49, the slit 2d (see FIGS. 41 and 42) described in the third embodiment is not formed, but the band member 34 is divided (not connected) at each corner of the outer annular body 28b. It has a structure. On the other hand, the inner annular body 28a is continuously formed without being divided in the middle in order to extend to the end portions of the contactor groups 3A, 3B, 3C, and 3D.

<Other variations>
Next, modifications other than the above will be described. In the first to fourth embodiments, the example in which the plurality of contactors 3 are arranged in one row or two rows along each side of the contactor arrangement region 2c forming a quadrangle in plan view has been described. The arrangement pattern is not limited to this. Although not shown, for example, contactor groups 3B, 3C, and 3D in which a plurality of contactors 3 are arranged in a plurality of rows as in the second embodiment, and a plurality of contactors 3a in one row as in the first embodiment. The present invention can be applied to a structure in which arranged contactor groups 3A are mixed.

  In the thin film sheet 32 of the third embodiment and the thin film sheet 39 of the third embodiment, the plurality of contactors 3 are respectively arranged in a plurality of rows (two rows) along the extending direction (array direction) of the contactor group. Embodiments applied to the arranged structure have been described. However, the number of contactors 3 in the contactor group and the arrangement of the contactor group are not limited to this. For example, the present invention can be applied to a structure in which a plurality of contactors 3 are arranged in a row in each contactor group as in the first embodiment. When a plurality of contactors 3 are arranged in a row, the contact pressure variation of the contactors 3a can be reduced with higher accuracy than in the case where the contactors 3a are arranged in a plurality of rows like the thin film sheet 32.

  Further, in the semiconductor chips 10 and 10c described in the present embodiment, a plurality of pads 11 are arranged along each of the four sides. For example, the pads 11 are provided along only one side or two sides of the four sides. It may be arranged. The number of contactor groups is one or two corresponding to the arrangement of the pads 11. In this case, the slit 2d, the protrusion 32a, and the band member 34 may be formed only on the side where the contactor group is disposed.

  In the first to fourth embodiments, the contactor arrangement area 2c corresponding to one chip area 10a (see FIGS. 2 and 19) is arranged on one thin film sheet, and each chip area is arranged. Although the embodiment in which the electrical inspection is sequentially performed on the 10a has been described, the electrical inspection can be performed collectively on the plurality of chip regions 10a.

  50 to 55 are enlarged plan views schematically showing a contactor arrangement region of a thin film sheet used when the electrical inspection process shown in FIG. 1 is collectively performed on a plurality of chip regions. 50 and 51 are modifications to the first embodiment or the second embodiment, and FIGS. 52 and 53 are modifications to the third embodiment. FIGS. 54 and 55 are modifications to the fourth embodiment. Each of the thin film sheets 60, 61, 62, 63, 64 and 65 shown in FIGS. 50 to 55 is plural (two in FIGS. 50, 52 and 54, and four in FIGS. 51, 53 and 55). It has a contactor arrangement region 2c. In each contactor arrangement region 2c, contactor groups 3A, 3B, 3C, and 3D are arranged, respectively. By adopting such a configuration, electrical inspection can be performed on a plurality of chip regions 10a (see FIG. 2) in a lump. Further, the layout in which three or more contactor arrangement regions 2c are arranged is not limited to the arrangement in a matrix form as shown in FIGS. 51, 53, and 55. For example, three or more contactor arrangement regions 2c are arranged in a row. You can also arrange them side by side.

  50 to 53, the slits 2d described in any one of the first to third embodiments are formed at the end portions of the contactor groups 3A, 3B, 3C, and 3D, respectively. . For this reason, the contact pressure of the contactor arrange | positioned at the edge part of contactor group 3A, 3B, 3C, 3D can be reduced. Further, in the middle of each contactor group 3A, 3B, 3C, 3D, for example, slits 2d described with reference to FIGS. 15, 16, 24, 28, and 29 are formed. For this reason, the contact pressure of the contactor arrange | positioned in the scattered arrangement | positioning area | region and the contactor arrange | positioned at the edge part of a dense arrangement | positioning area | region can be reduced. Incidentally, as shown in FIGS. 50 to 53, when one thin film sheet 60, 61, 62, 63 has a plurality of contactor placement regions 2 c, there are contactor groups facing each other through the boundary of the contactor placement region 2 c. To do. For example, in FIG. 50, a contactor group 3B arranged in the left contactor arrangement region 2c and a contactor group 3D arranged in the right contactor arrangement region 2c correspond to this. In the slit 2d formed corresponding to such a contactor group, the slit 2d arranged in one contactor arrangement region 2c may intersect with the slit 2d arranged in the other contactor arrangement region 2c. In this case, the slit 2d can be connected to extend over the plurality of contactor arrangement regions 2c. In addition, if the slit 2d is extended over the plurality of contactor arrangement areas 2c, the both ends of the slit 2d may be accommodated in the contactor arrangement area 2c when the wiring layout in the other contactor arrangement areas 2c becomes an obstruction factor. This can be suppressed by arranging in the position.

  Further, as shown in FIG. 52 and FIG. 53, belt members 34 are arranged on both sides of each contactor group 3A, 3B, 3C, 3D. For this reason, the dispersion | variation in the contact pressure of the several contactor arrange | positioned in the area | region pinched | interposed between the strip | belt members 34 can be reduced. Incidentally, as shown in FIGS. 52 and 53, when a plurality of contactor arrangement regions 2c are arranged side by side, the intervals between the contactor arrangement regions 2c are the intervals between adjacent chip regions 10a shown in FIG. It varies according to (width). Depending on the width of the scribe area 10b, the band members 34 may not be arranged in the adjacent contactor arrangement areas 2c as shown in FIGS. Therefore, in the thin film sheet 66 of FIG. 56 shown as a modification of FIG. 54, one band member 34 that is also used in the adjacent contactor arrangement region 2c is arranged. That is, of the outer annular bodies 28b included in each of the two contactor arrangement regions 2c (for example, see FIG. 47), the band members 34 arranged to face each other are integrated. In this case, the integrated band member 34 and the band member 34 which is a part of the inner annular body 28a opposed to the integrated band member 34 may have different band widths. However, even in this case, the variation in the contact pressure of the contactor 3 can be reduced as compared with the case where the band member 34 (projecting portion 32a) is not formed.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say. For example, the modifications described in the above embodiments can be applied in appropriate combination within a range not departing from the gist.

<Summary of invention>
The invention described in detail in the present application includes the following configurations. Hereinafter, each item will be described.

[Item 1]
(A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the contact terminal arrangement region in which the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
In plan view, the first contact terminal disposed at the end of the first contact terminal group among the plurality of first contact terminals is opposite to the first contact terminal group on the first insulating film. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals,
Between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact sheet forming surface and the back surface of the first sheet, from one surface to the other surface. A method of manufacturing a semiconductor integrated circuit device, wherein a slit including an opening penetrating through the second wiring is formed along the second wiring.

[Item 2]
In item 1,
The method of manufacturing a semiconductor integrated circuit device, wherein a length of the slit is longer than a width in a direction orthogonal to the extending direction of the first contact terminal group.

[Item 3]
In item 2,
In the plan view, the contact terminal arrangement region that forms a quadrangle includes the first contact terminal group, the first side, and the first side of the four sides that constitute the outer edge of the contact terminal arrangement region. A second contact terminal group in which a plurality of second contact terminals are arranged along the intersecting second side, and a first corner region in which the first contact terminal group and the second contact terminal group intersect,
The semiconductor integrated circuit, wherein the slit is formed between the first corner region and the first contact terminal group, and between the first corner region and the second contact terminal group, respectively. A method of manufacturing a circuit device.

[Item 4]
In item 3,
The length of the slit is longer than the length in the direction from the first or second contact terminal group toward the inside of the contact terminal arrangement area, from the first or second contact terminal group to the contact terminal arrangement area. A method of manufacturing a semiconductor integrated circuit device, wherein a length in a direction toward the outside is longer.

[Item 5]
In item 1,
A method of manufacturing a semiconductor integrated circuit device, wherein a side surface of the second wiring on the slit side is covered with the second insulating film.

[Item 6]
In item 1,
The first contact terminal group includes a first region where the plurality of first contact terminals are disposed at a first interval, and the first contact terminals are disposed at a second interval wider than the first interval. A second region,
The slit is formed along the second wiring between the first contact terminal disposed in the second region and the first contact terminal disposed at an end of the first region. A method of manufacturing a semiconductor integrated circuit device.

[Item 7]
In item 1,
The step (b)
(B1) preparing a substrate;
(B2) After the step (b1), a step of sequentially stacking the plurality of contact terminals, the first insulating film, the plurality of second and third wirings, and the second insulating film on the substrate;
(B3) after the step (b2), irradiating laser light from the back side of the first sheet to form the slit;
(B4) After the step (b3), connecting and holding the first sheet with the wiring board;
A method for manufacturing a semiconductor integrated circuit device, comprising:

[Item 8]
In item 1,
The step (b)
(B1) preparing a substrate;
(B2) After the step (b1), a step of sequentially stacking the plurality of contact terminals, the first insulating film, the plurality of second and third wirings, and the second insulating film on the substrate;
(B3) After the step (b2), connecting and holding the first sheet with the wiring board;
(B4) After the step (b3), the step of pressing from the back surface of the contact terminal arrangement region via the buffer layer by the pressing portion;
(B5) After the step (b4), a step of irradiating a laser beam from the contact terminal forming surface side of the first sheet to form the slit;
A method for manufacturing a semiconductor integrated circuit device, comprising:

[Item 9]
In item 8,
In the step (b5), an opening reaching at least a part of the buffer layer disposed above the slit is formed.

[Item 10]
In item 1,
The plurality of first contact terminals arranged in the first contact terminal group include a plurality of first row contact terminals arranged in a first row along the first direction, and a second row. A method of manufacturing a semiconductor integrated circuit device, comprising a plurality of second row contact terminals arranged.

[Item 11]
In item 10,
Around the end of the first contact terminal group, the plurality of first row contact terminals are not arranged, and the plurality of second row contact terminals are arranged in a row,
Of the plurality of second row contact terminals, a contact terminal disposed at an end of the second row, and the third wiring disposed on the opposite side of the first contact terminal group of the contact terminals; In between, the slit is formed,
Among the plurality of first row contact terminals, between the contact terminal arranged at the end of the first row and the second or third wiring arranged next to the contact terminal, A method of manufacturing a semiconductor integrated circuit device, wherein the slit is not formed.

[Item 12]
In item 10,
The first row of the first contact terminal group includes a first dense arrangement region in which the plurality of first row contact terminals are arranged at a first interval, and a second that is wider than the first interval. And a first scattered arrangement region in which the plurality of first row contact terminals are arranged at intervals of
In the second row of the first contact terminal group, a second densely arranged region in which the plurality of second row contact terminals are arranged at a third interval, and a fourth width wider than the third interval. And a second scattered arrangement region in which the plurality of second row contact terminals are arranged at intervals of
A method of manufacturing a semiconductor integrated circuit device, wherein the slit is formed in a region where the first and second scattered arrangement regions are arranged adjacent to each other along the first direction.

[Item 13]
In item 12,
In the first scattered arrangement area and the second dense arrangement area, or in the area where the first dense arrangement area and the second scattered arrangement area are arranged adjacent to each other along the first direction, the slits are provided. A method of manufacturing a semiconductor integrated circuit device, wherein the semiconductor integrated circuit device is not formed.

[Item 14]
(A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the contact terminal arrangement region in which the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
In plan view, the first contact terminal disposed at the end of the first contact terminal group among the plurality of first contact terminals is opposite to the first contact terminal group on the first insulating film. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals,
Between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact sheet forming surface and the back surface of the first sheet, from one surface to the other surface. A slit comprising an opening penetrating through is formed along the second wiring,
The projection is arranged to extend along the first contact terminal group next to the first contact terminal group in plan view, and the slit is arranged on an extension line of the projection. A method for manufacturing a semiconductor integrated circuit device, wherein the protruding portion is not formed in a region to be formed.

[Item 15]
In item 14,
A plurality of the protrusions are formed on the back surface,
The plurality of protrusions are arranged on both sides of the first contact terminal group so as to extend along the first contact terminal group in a plan view. Method.

[Item 16]
In item 15,
A third insulating film is formed between the second insulating film and the plurality of second wirings to cover the first insulating film and the plurality of second wirings,
Between the second insulating film and the third insulating film, a plurality of band members made of a material having higher rigidity than the second insulating film are formed,
The plurality of band members include a plurality of first band members arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the plurality of protrusions are formed following the plurality of band members.

[Item 17]
In item 16,
The method for manufacturing a semiconductor integrated circuit device, wherein the plurality of band members are made of a metal film.

[Item 18]
In item 17,
The side surface on the slit side of the second and third wirings and the side surface on the slit side of the plurality of strip members are covered with the second insulating film. .

[Item 19]
In item 17,
The step (b)
(B1) preparing a substrate;
(B2) After (b1), on the substrate, the plurality of contact terminals, the first insulating film, the plurality of second and third wirings, the third insulating film, the plurality of strip members, and Laminating the second insulating film in sequence;
(B3) after the step (b2), irradiating laser light from the back side of the first sheet to form the slit;
(B4) After the step (b3), connecting and holding the first sheet with the wiring board;
Including
The method of manufacturing a semiconductor integrated circuit device, wherein the plurality of band members are not formed in the region irradiated with the laser light in the step (b3).

[Item 20]
In item 17,
The step (b)
(B1) preparing a substrate;
(B2) After (b1), on the substrate, the plurality of contact terminals, the first insulating film, the plurality of second and third wirings, the third insulating film, the plurality of strip members, and Laminating the second insulating film in sequence;
(B3) After the step (b2), connecting and holding the first sheet with the wiring board;
(B4) After the step (b3), the step of pressing from the back surface of the contact terminal arrangement region via the buffer layer by the pressing portion;
(B5) After the step (b4), a step of irradiating a laser beam from the contact terminal forming surface side of the first sheet to form the slit;
Including
The method of manufacturing a semiconductor integrated circuit device, wherein the plurality of band members are not formed in the region irradiated with the laser light in the step (b5).

[Item 21]
A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and an opposite side of the contact terminal forming surface A first sheet having a back surface, the tips of the plurality of contact terminals being held on the wiring board facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
In plan view, the first contact terminal disposed at the end of the first contact terminal group among the plurality of first contact terminals is opposite to the first contact terminal group on the first insulating film. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals,
Between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact sheet forming surface and the back surface of the first sheet, from one surface to the other surface. A probe card, wherein a slit comprising an opening penetrating through the second wiring is formed along the second wiring.

[Item 22]
(A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the region where the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
The method of manufacturing a semiconductor integrated circuit device, wherein the protruding portion is disposed apart from the first contact terminal group in a plan view.

[Item 23]
(A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the region where the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the projecting portion is disposed adjacent to the first contact terminal group so as to extend along the first contact terminal group in a plan view.

[Item 24]
In item 23,
A plurality of the protrusions are formed on the back surface,
The plurality of protrusions are arranged on both sides of the first contact terminal group so as to extend along the first contact terminal group in a plan view. Method.

[Claim 25]
In item 24,
A third insulating film is formed between the second insulating film and the plurality of second wirings to cover the first insulating film and the plurality of second wirings,
Between the second insulating film and the third insulating film, a plurality of band members made of a material having higher rigidity than the second insulating film are formed,
The plurality of band members include a plurality of first band members arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the plurality of protrusions are formed following the plurality of band members.

[Item 26]
In item 25,
The plurality of second wirings and the plurality of contact terminals are respectively connected through a plurality of through holes formed on the plurality of contact terminals of the first insulating film,
Of the back surface, a plurality of first regions positioned on the plurality of contact terminals are lower than a height of the protruding portion, and a second height between the plurality of first regions and the protruding portion. A method for manufacturing a semiconductor integrated circuit device, characterized in that the height is higher than a region height.

[Item 27]
In item 24,
In plan view, the distance from the first band member arranged next to one of the first contact terminal groups to the first contact terminal group among the plurality of first band members is the first contact terminal group. A method of manufacturing a semiconductor integrated circuit device, wherein the distance is equal to a distance from a first band member arranged next to the first contact terminal group to the first contact terminal group.

[Item 28]
In item 26,
In plan view, among the plurality of first band members, the band width of the first band member disposed next to one of the first contact terminal groups and the other adjacent to the first contact terminal group A method of manufacturing a semiconductor integrated circuit device, wherein the band widths of the first band members are equal.

[Item 29]
In item 26,
In the first contact terminal group, the plurality of first contact terminals are arranged in one or a plurality of rows along the first direction,
In the case of the plurality of rows, the plurality of band members are not formed between the plurality of first contact terminals arranged in the plurality of rows in a plan view. .

[Section 30]
In item 25,
The plurality of chip regions each form a quadrangle in plan view, and a plurality of first chip electrode groups in which a plurality of first chip electrodes are arranged along each of four sides constituting the outer edge of each chip mounting region. A second chip electrode group in which the second chip electrodes are disposed, a third chip electrode group in which the plurality of third chip electrodes are disposed, and a fourth chip electrode group in which the plurality of fourth chip electrodes are disposed. ,
On the contact terminal forming surface of the first sheet, in the step (c), the first contact terminal group in which the plurality of first contact terminals arranged to face the plurality of first chip electrodes are formed, A second contact terminal group in which the plurality of second contact terminals arranged opposite to the plurality of second chip electrodes is formed, and a plurality of third contact terminals arranged opposite to the plurality of third chip electrodes are formed. A third contact terminal group formed, and a fourth contact terminal group in which the plurality of fourth contact terminals arranged to face the plurality of fourth chip electrodes are disposed,
The plurality of band members include, in plan view, the plurality of first band members extending in a band shape along the first contact terminal group on both sides of the first contact terminal group, and the second contact terminal group. A plurality of second belt members extending in a band shape along the second contact terminal group on both sides, and a plurality of third members extending in a band shape along the third contact terminal group on both sides of the third contact terminal group. A belt member, and a plurality of fourth belt members extending in a belt shape along the fourth contact terminal group are included on both sides of the fourth contact terminal group,
The plurality of protrusions are formed following the plurality of first, second, third and fourth belt members,
The distance between the plurality of first belt members, the distance between the plurality of second belt members, the distance between the plurality of third belt members, and the distance between the plurality of fourth belt members are equal. A method for manufacturing a semiconductor integrated circuit device.

[Claim 31]
In item 30,
The first, second, third and fourth contact terminal groups constitute a quadrilateral in plan view,
Each of the plurality of first, second, third, and fourth belt members has a first annular body that is disposed inside the quadrilateral and a second that is disposed outside the quadrilateral in plan view. A method of manufacturing a semiconductor integrated circuit device, comprising a part of an annular body.

[Item 32]
In item 31,
The method of manufacturing a semiconductor integrated circuit device, wherein the first annular body is continuously formed without being divided in the middle.

[Claim 33]
In item 32,
The method of manufacturing a semiconductor integrated circuit device, wherein the second annular body is continuously formed without being divided in the middle.

[Item 34]
In item 33,
The second annular body has four sides along each side of the quadrilateral formed by the first, second, third and fourth contact terminal groups,
In the corner part where the extension line of each side of the second annular body intersects, the two connected sides are connected via an oblique arrangement part arranged obliquely with respect to each side so as not to be orthogonal to each other. A method for manufacturing a semiconductor integrated circuit device.

[Claim 35]
In item 24,
The method for manufacturing a semiconductor integrated circuit device, wherein the plurality of band members are made of a metal film.

[Claim 36]
A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and an opposite side of the contact terminal forming surface A first sheet having a back surface, the tips of the plurality of contact terminals being held on the wiring board facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The probe card, wherein the protruding portion is arranged to extend along the first contact terminal group next to the first contact terminal group in a plan view.

[Section 37]
In item 36,
A plurality of the protrusions are formed on the back surface,
The plurality of protrusions are arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in plan view.

[Claim 38]
In item 37,
A third insulating film is formed between the second insulating film and the plurality of second wirings to cover the first insulating film and the plurality of second wirings,
Between the second insulating film and the third insulating film, a plurality of band members made of a material having higher rigidity than the second insulating film are formed,
The plurality of band members include a plurality of first band members arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in a plan view. ,
The plurality of protrusions are formed to follow the plurality of band members.

[Claim 39]
In item 38,
The plurality of second wirings and the plurality of contact terminals are respectively connected through a plurality of through holes formed on the plurality of contact terminals of the first insulating film,
Of the back surface, a plurality of first regions positioned on the plurality of contact terminals are lower than a height of the protruding portion, and a second height between the plurality of first regions and the protruding portion. A probe card characterized by being higher than the height of the area.

[Claim 40]
In item 39,
In plan view, the distance from the first band member arranged next to one of the first contact terminal groups to the first contact terminal group among the plurality of first band members is the first contact terminal group. A probe card characterized by being equal to a distance from a first belt member arranged next to the other to the first contact terminal group.

[Claim 41]
In item 39,
The plurality of contact terminals are formed in a contact terminal arrangement region of the contact terminal forming surface of the first sheet,
The contact terminal arrangement area is a quadrangle in plan view, and the first contact terminal group in which a plurality of the first contact terminals are arranged along each of four sides constituting the outer edge of the contact terminal arrangement area. A second contact terminal group in which a plurality of second contact terminals are disposed, a third contact terminal group in which a plurality of third contact terminals are disposed, and a fourth contact terminal group in which a plurality of fourth contact terminals are disposed. Arranged,
The plurality of band members include, in plan view, the plurality of first band members extending in a band shape along the first contact terminal group on both sides of the first contact terminal group, and the second contact terminal group. A plurality of second belt members extending in a band shape along the second contact terminal group on both sides, and a plurality of third members extending in a band shape along the third contact terminal group on both sides of the third contact terminal group. A belt member, and a plurality of fourth belt members extending in a belt shape along the fourth contact terminal group are included on both sides of the fourth contact terminal group,
The plurality of protrusions are formed following the plurality of first, second, third and fourth belt members,
The distance between the plurality of first belt members, the distance between the plurality of second belt members, the distance between the plurality of third belt members, and the distance between the plurality of fourth belt members are equal. Probe card.

[Item 42]
A table on which a semiconductor wafer is placed;
A probe card electrically connected to a tester for inspecting electrical characteristics of the semiconductor wafer;
A semiconductor inspection apparatus comprising:
The probe card is
A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and a position opposite to the contact terminal forming surface A first sheet held on the wiring board with tips of the plurality of contact terminals facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
In plan view, the first contact terminal disposed at the end of the first contact terminal group among the plurality of first contact terminals is opposite to the first contact terminal group on the first insulating film. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals,
Between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact sheet forming surface and the back surface of the first sheet, from one surface to the other surface. A semiconductor inspection apparatus, wherein a slit comprising an opening penetrating through the second wiring is formed along the second wiring.

[Item 43]
A table on which a semiconductor wafer is placed;
A probe card electrically connected to a tester for inspecting electrical characteristics of the semiconductor wafer;
A semiconductor inspection apparatus comprising:
The probe card is
A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and a position opposite to the contact terminal forming surface A first sheet held on the wiring board with tips of the plurality of contact terminals facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
In plan view, the first contact terminal disposed at the end of the first contact terminal group among the plurality of first contact terminals is opposite to the first contact terminal group on the first insulating film. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals,
Between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact sheet forming surface and the back surface of the first sheet, from one surface to the other surface. A slit comprising an opening penetrating through is formed along the second wiring,
The projection is arranged to extend along the first contact terminal group next to the first contact terminal group in plan view, and the slit is arranged on an extension line of the projection. The semiconductor inspection apparatus is characterized in that the protruding portion is not formed in a region to be formed.

[Item 44]
A table on which a semiconductor wafer is placed;
A probe card electrically connected to a tester for inspecting electrical characteristics of the semiconductor wafer;
A semiconductor inspection apparatus comprising:
The probe card is
A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and a position opposite to the contact terminal forming surface A first sheet held on the wiring board with tips of the plurality of contact terminals facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The semiconductor inspection apparatus, wherein the protrusion is disposed apart from the first contact terminal group in plan view.

[Item 45]
A table on which a semiconductor wafer is placed;
A probe card electrically connected to a tester for inspecting electrical characteristics of the semiconductor wafer;
A semiconductor inspection apparatus comprising:
The probe card is
A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and a position opposite to the contact terminal forming surface A first sheet held on the wiring board with tips of the plurality of contact terminals facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The semiconductor inspection apparatus, wherein the protruding portion is arranged to extend along the first contact terminal group next to the first contact terminal group in a plan view.

  INDUSTRIAL APPLICABILITY The present invention is applicable to a semiconductor integrated circuit device that performs electrical inspection by pressing a contact terminal of a probe card against an electrode, and a probe card that is used for electrical inspection.

DESCRIPTION OF SYMBOLS 1 Wiring board 1a Lower surface 1b Upper surface 1c Wiring 1d Pogo seat 1e Opening part 2 Thin film sheet 2a Main surface (contact terminal formation surface)
2b Back surface 2c Contactor arrangement area (contact terminal arrangement area)
2d slit 2e, 2g, 2h, 2k, 2n region 2f corner region 3, 3a, 3b, 3c, 3d, 3e, 3f, 3g, 3h, 3k, 3m, 3n, 3p, 3r contactor (contact terminal)
3A, 3B, 3C, 3D contactor group (contact terminal group)
4 Pressing part 4a Plunger 4b Pushing piece 4c Elastomer 4d Spring 4e Pushing pin 4f Polyimide sheet 5 Pressurizing part 5a Connecting jig 5b Spring 6 Connecting jig 7 Overhang ring 8 Adhesive ring 10, 10c Semiconductor chip (semiconductor integrated circuit device)
10a Chip area 10b Scribe area 11, 11a, 11b, 11c, 11d, 11e, 11f Pad (chip electrode)
11A, 11B, 11C, 11D Pad group (chip electrode group)
DESCRIPTION OF SYMBOLS 12 Semiconductor substrate 12a Main surface 13 Wiring layer 13a Wiring 13b Insulating film 14 Protective film 14a Opening part 21 Metal film 21a Rhodium film 21b Nickel film 22 Polyimide film 23 Wiring 23a, 23b Conductive films 24, 24a, 24b Wiring layers 25, 33, 102 Polyimide film (insulating film)
26 Dummy wiring 28a Inner ring body 28b Outer ring body 28c Diagonal arrangement part 30a, 30b Area 31, 32, 36, 37, 38, 39, 60, 61, 62, 63, 64, 65, 66, 100, 101 Thin film sheet 32a Projection 34 Band member 34a, 34b Metal film 40 Substrate 40a Opening 41 Conductive film 42, 43 Thin film 50, 51 Arrow CHD Card holder IFR Interface ring PGP Pogo pin PR Prober PRC Probe card T Tester TH1, TH2 Through hole THD Tester head WCH Wafer chuck WH Wafer WST Wafer stages L1, L2, L3 Distance P1, P2 Interval W1, W2 Band width

Claims (20)

(A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the contact terminal arrangement region in which the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
In plan view, the first contact terminal disposed at the end of the first contact terminal group among the plurality of first contact terminals is opposite to the first contact terminal group on the first insulating film. A third wiring that is formed along the second wiring and is not electrically connected to the plurality of contact terminals,
Between the first contact terminal disposed at the end of the first contact terminal group and the third wiring, the contact sheet forming surface and the back surface of the first sheet, from one surface to the other surface. A method of manufacturing a semiconductor integrated circuit device, wherein a slit including an opening penetrating through the second wiring is formed along the second wiring. In claim 1,
The method of manufacturing a semiconductor integrated circuit device, wherein a length of the slit is longer than a width in a direction orthogonal to the extending direction of the first contact terminal group. In claim 2,
In the plan view, the contact terminal arrangement region that forms a quadrangle includes the first contact terminal group, the first side, and the first side of the four sides that constitute the outer edge of the contact terminal arrangement region. A second contact terminal group in which a plurality of second contact terminals are arranged along the intersecting second side, and a first corner region in which the first contact terminal group and the second contact terminal group intersect,
The semiconductor integrated circuit, wherein the slit is formed between the first corner region and the first contact terminal group, and between the first corner region and the second contact terminal group, respectively. A method of manufacturing a circuit device. In claim 3,
The length of the slit is longer than the length in the direction from the first or second contact terminal group toward the inside of the contact terminal arrangement area, from the first or second contact terminal group to the contact terminal arrangement area. A method of manufacturing a semiconductor integrated circuit device, wherein a length in a direction toward the outside is longer. In claim 1,
A method of manufacturing a semiconductor integrated circuit device, wherein a side surface of the second wiring on the slit side is covered with the second insulating film. In claim 1,
The first contact terminal group includes a first region where the plurality of first contact terminals are disposed at a first interval, and the first contact terminals are disposed at a second interval wider than the first interval. A second region,
The slit is formed along the second wiring between the first contact terminal disposed in the second region and the first contact terminal disposed at an end of the first region. A method of manufacturing a semiconductor integrated circuit device. In claim 1,
The step (b)
(B1) preparing a substrate;
(B2) After the step (b1), a step of sequentially stacking the plurality of contact terminals, the first insulating film, the plurality of second and third wirings, and the second insulating film on the substrate;
(B3) after the step (b2), irradiating laser light from the back side of the first sheet to form the slit;
(B4) After the step (b3), connecting and holding the first sheet with the wiring board;
A method for manufacturing a semiconductor integrated circuit device, comprising: In claim 1,
The step (b)
(B1) preparing a substrate;
(B2) After the step (b1), a step of sequentially stacking the plurality of contact terminals, the first insulating film, the plurality of second and third wirings, and the second insulating film on the substrate;
(B3) After the step (b2), connecting and holding the first sheet with the wiring board;
(B4) After the step (b3), the step of pressing from the back surface of the contact terminal arrangement region via the buffer layer by the pressing portion;
(B5) After the step (b4), a step of irradiating a laser beam from the contact terminal forming surface side of the first sheet to form the slit;
A method for manufacturing a semiconductor integrated circuit device, comprising: In claim 8,
In the step (b5), an opening reaching at least a part of the buffer layer disposed above the slit is formed. In claim 1,
The plurality of first contact terminals arranged in the first contact terminal group include a plurality of first row contact terminals arranged in a first row along the first direction, and a second row. A plurality of second row contact terminals disposed are included;
Around the end of the first contact terminal group, the plurality of first row contact terminals are not arranged, and the plurality of second row contact terminals are arranged in a row,
Of the plurality of second row contact terminals, a contact terminal disposed at an end of the second row, and the third wiring disposed on the opposite side of the first contact terminal group of the contact terminals; In between, the slit is formed,
Among the plurality of first row contact terminals, between the contact terminal arranged at the end of the first row and the second or third wiring arranged next to the contact terminal, A method of manufacturing a semiconductor integrated circuit device, wherein the slit is not formed. In claim 1,
The plurality of first contact terminals arranged in the first contact terminal group include a plurality of first row contact terminals arranged in a first row along the first direction, and a second row. A plurality of second row contact terminals disposed are included;
The first row of the first contact terminal group includes a first dense arrangement region in which the plurality of first row contact terminals are arranged at a first interval, and a second that is wider than the first interval. And a first scattered arrangement region in which the plurality of first row contact terminals are arranged at intervals of
In the second row of the first contact terminal group, a second densely arranged region in which the plurality of second row contact terminals are arranged at a third interval, and a fourth width wider than the third interval. And a second scattered arrangement region in which the plurality of second row contact terminals are arranged at intervals of
A method of manufacturing a semiconductor integrated circuit device, wherein the slit is formed in a region where the first and second scattered arrangement regions are arranged adjacent to each other along the first direction. In claim 1,
The first sheet includes a protrusion formed on the back surface,
The projection is arranged to extend along the first contact terminal group next to the first contact terminal group in plan view, and the slit is arranged on an extension line of the projection. A method for manufacturing a semiconductor integrated circuit device, wherein the protruding portion is not formed in a region to be formed. (A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the region where the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
The method of manufacturing a semiconductor integrated circuit device, wherein the protruding portion is disposed apart from the first contact terminal group in a plan view. (A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the region where the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the projecting portion is disposed adjacent to the first contact terminal group so as to extend along the first contact terminal group in a plan view. In claim 14,
A plurality of the protrusions are formed on the back surface,
The plurality of protrusions are arranged on both sides of the first contact terminal group so as to extend along the first contact terminal group in a plan view. Method. In claim 15,
A third insulating film is formed between the second insulating film and the plurality of second wirings to cover the first insulating film and the plurality of second wirings,
Between the second insulating film and the third insulating film, a plurality of band members made of a material having higher rigidity than the second insulating film are formed,
The plurality of band members include a plurality of first band members arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the plurality of protrusions are formed following the plurality of band members. In claim 16,
The plurality of second wirings and the plurality of contact terminals are respectively connected through a plurality of through holes formed on the plurality of contact terminals of the first insulating film,
Of the back surface, a plurality of first regions positioned on the plurality of contact terminals are lower than a height of the protruding portion, and a second height between the plurality of first regions and the protruding portion. A method for manufacturing a semiconductor integrated circuit device, characterized in that the height is higher than a region height. In claim 16 ,
In plan view, the distance from the first band member arranged next to one of the first contact terminal groups to the first contact terminal group among the plurality of first band members is the first contact terminal group. A method of manufacturing a semiconductor integrated circuit device, wherein the distance is equal to a distance from a first band member arranged next to the first contact terminal group to the first contact terminal group. In claim 17,
In plan view, among the plurality of first band members, the band width of the first band member disposed next to one of the first contact terminal groups and the other adjacent to the first contact terminal group A method of manufacturing a semiconductor integrated circuit device, wherein the band widths of the first band members are equal. In claim 17,
In the first contact terminal group, the plurality of first contact terminals are arranged in one or a plurality of rows along the first direction,
In the case of the plurality of rows, the plurality of band members are not formed between the plurality of first contact terminals arranged in the plurality of rows in a plan view. .

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