JP2012058103A - Method for manufacturing semiconductor integrated circuit device and probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformize contact pressures between a plurality of contact terminals and a plurality of chip electrodes.SOLUTION: In the method for manufacturing the semiconductor integrated circuit device, a thin-film sheet (first sheet) 2 has a contact terminal formation face having a plurality of contactors (contact terminals) 3 formed thereon, and a rear face 2b positioned on a side opposite to the contact terminal formation face. The thin-film sheet 2 has a first insulating film (polyimide film) having the contact terminal formation face, a wiring formed between the first insulating film and the rear face 2b, and the rear face 2b, and includes a polyimide film (second insulating film) 26 formed on the first insulating film and the wiring, and a projection portion 2d formed on the rear face 2b. The projection portion 2d is arranged adjacent to a contactor group (first contact terminal group) 3A having the plurality of contactors 3 arrayed therein so as to extend along the contactor group 3A, in plan view.

Description

  The present invention relates to a technology for manufacturing a semiconductor integrated circuit device, and more particularly to a technology effective when applied to an electrical inspection of a semiconductor integrated circuit device performed by pressing a contact terminal of a probe card against an electrode of the semiconductor integrated circuit device. is there.

  International Publication No. 2006/97982 (Patent Document 1) discloses a method of electrical inspection (probe inspection) of a semiconductor integrated circuit performed by pressing a contact terminal of a probe card against an electrode pad of a semiconductor integrated circuit device. The probe card to be used is described.

  Japanese Unexamined Patent Application Publication No. 2007-134554 (Patent Document 2) describes a probe card having a thin film sheet in which a plurality of wiring layers are stacked on a contact terminal.

  Japanese Patent Laying-Open No. 2008-164486 (Patent Document 3) describes a probe card having a thin film sheet in which a contact terminal and a wiring are electrically connected through a through hole formed on the contact terminal.

International Publication No. 2006/97982 JP 2007-134554 A JP 2008-164486 A

  There is a probe inspection as an inspection technique for a semiconductor integrated circuit device. This probe inspection includes a function test for confirming whether or not the device operates according to a predetermined function, a test for determining a non-defective product / defective product by performing a DC operation characteristic and an AC operation characteristic test, and the like. In probe inspections, probe inspections are performed in the wafer state in response to demands for wafer shipment (quality differentiation), KGD (Known Good Die) support (MCP (Multi-Chip Package) yield improvement), or total cost reduction. Technology to do is used.

  In recent years, semiconductor integrated circuit devices have become more multifunctional, and it has been promoted to create a plurality of circuits on one semiconductor chip (hereinafter simply referred to as a chip). In addition, in order to reduce the manufacturing cost of the semiconductor integrated circuit device, the semiconductor elements and wirings are miniaturized to reduce the chip area and increase the number of obtained chips per semiconductor wafer (hereinafter simply referred to as a wafer). Is underway. For this reason, not only the number of chip electrodes (test pads, bonding pads) is increased, but also the arrangement of the chip electrodes is narrowed, and the area of the chip electrodes is also reduced. When a prober having a cantilever-like contact terminal is used for the probe inspection due to the narrowing of the pitch of the tip electrode, it is difficult to install the contact terminal according to the arrangement position of the tip electrode. There is a problem that becomes.

  The inventors of the present application have studied a technique that can realize a probe inspection even for a chip having a chip electrode with a narrow pitch by using a prober having a contact terminal formed by using a manufacturing technique of a semiconductor integrated circuit device. ing. Among them, the present inventors have found the following further problems.

  That is, in the probe inspection, a plurality of contact terminals are brought into contact with a plurality of chip electrodes formed on the main surface of the wafer, so that a technique for reducing variation in contact pressure between each contact terminal and each chip electrode is required. When the variation of the contact pressure is large, the contact resistance becomes non-uniform, which causes a failure to perform an accurate electrical inspection.

  Moreover, if the contact pressure is too large, the wafer to be inspected may be damaged. From the viewpoint of preventing the wafer from being damaged, it is effective to reduce the central value (designed contact pressure) of the variation of the contact pressure. For this purpose, it is necessary to further reduce the variation margin. .

  The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of reducing variations in contact pressure between a plurality of contact terminals and a plurality of chip electrodes.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, a method for manufacturing a semiconductor device which is one embodiment of the present invention includes the following steps. (A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer. (B) The wiring board on which the plurality of first wirings are formed, and the wiring board so that the tips of the plurality of contact terminals for contacting the plurality of chip electrodes are opposed to the main surface side of the semiconductor wafer. A first card having a first sheet held on the first sheet, and a pressing portion that presses an area of the first sheet on which the plurality of contact terminals are formed from a back surface of the first sheet through a buffer layer. Including the step of preparing And (c) conducting an electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer.

  The first sheet includes a contact terminal forming surface on which the plurality of contact terminals are formed, and the back surface located on the opposite side of the contact terminal forming surface. Further, the first sheet is formed between the first insulating film having the contact terminal forming surface, the first insulating film and the back surface, and the plurality of first wirings and the plurality of contact terminals, A plurality of second wirings that are electrically connected, a second insulating film that has the back surface and is formed on the first insulating film and the plurality of second wirings, and a protrusion formed on the back surface Including. Moreover, the said protrusion part is spaced apart and arrange | positioned from the said contact terminal in planar view.

  The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to one aspect of the present invention, variations in contact pressure between a plurality of contact terminals and a plurality of chip electrodes can be reduced.

It is explanatory drawing which shows the outline | summary of the manufacturing flow of the semiconductor integrated circuit device which is one embodiment of this invention. It is a top view which shows the main surface side of the wafer prepared at the wafer preparation process shown in FIG. FIG. 3 is an enlarged sectional view of a part of the wafer shown in FIG. 2. It is a top view which shows one main surface side among the several semiconductor chips acquired by the individualization process shown in FIG. FIG. 2 is an explanatory view schematically showing a schematic configuration of a semiconductor integrated circuit inspection apparatus used in the probe inspection process shown in FIG. 1. It is sectional drawing which shows the whole structure of the probe card shown in FIG. It is a top view which shows the opposing surface side with the wafer of the probe card shown in FIG. It is a top view which shows the outline | summary of the wiring layout of the thin film sheet | seat shown in FIG. FIG. 8 is an enlarged plan view of a contactor arrangement region shown in FIG. 7. FIG. 10 is an enlarged plan view of a portion B in FIG. 9. It is an expanded sectional view along CC line of FIG. It is an enlarged plan view which shows the shape of the back surface side of the thin film sheet shown in FIG. It is an expanded sectional view which shows the assembly process of the thin film sheet shown in FIG. It is an expanded sectional view which shows the state which started the press from the back surface of the thin film sheet shown in FIG. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet | seat shown in FIG. It is an expanded sectional view showing the state where the back of a thin film sheet was pressed with the press part in the section which followed the DD line of Drawing 10. It is an enlarged plan view which shows the back surface side of the E section of the thin film sheet shown in FIG. It is an expanded sectional view which shows the 1st modification of the thin film sheet shown in FIG. It is an expanded sectional view showing the 2nd modification of a thin film sheet shown in FIG. It is an enlarged plan view which shows the back surface side of the F section of the thin film sheet shown in FIG. It is an enlarged plan view which shows the back surface side of the G section of the thin film sheet shown in FIG. It is an enlarged plan view which shows the back surface side of the H section of the thin film sheet shown in FIG. FIG. 23 is an enlarged plan view schematically showing a relative positional relationship between the entire structure of the belt member shown in FIGS. 12 and 20 to 22 and a contactor group. FIG. 24 is an enlarged plan view schematically showing a first modified example with respect to FIG. 23. FIG. 24 is an enlarged plan view schematically showing a second modified example with respect to FIG. 23. It is an enlarged plan view which shows the modification with respect to FIG. FIG. 24 is an enlarged plan view showing a third modification to FIG. 23 of the thin film sheet used when the electrical inspection process shown in FIG. 1 is performed collectively for a plurality of chip regions. FIG. 24 is an enlarged plan view showing a fourth modification to FIG. 23 of the thin film sheet used when the electrical inspection step shown in FIG. 1 is performed collectively for a plurality of chip regions. FIG. 28 is an enlarged plan view showing a modification of FIG. 27 of a thin film sheet used when the electrical inspection process shown in FIG. 1 is performed on a plurality of chip regions at once. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet which is the 1st comparative example with respect to FIG. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet which is the 2nd comparative example with respect to FIG.

(Description format, basic terms, usage in this application)
In the present application, the description of the embodiment will be divided into a plurality of sections for convenience, if necessary, but these are not independent from each other unless otherwise specified. Regardless of the front and rear, each part of a single example, one is a part of the other, or a part or all of the modifications. In principle, repeated description of similar parts is omitted. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It does not exclude things that contain. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but includes a SiGe (silicon-germanium) alloy, other multi-component alloys containing silicon as a main component, and other additives. Needless to say, it is also included. In addition, the term “gold plating”, “Cu layer”, “nickel plating”, etc. includes not only pure materials but also members mainly composed of gold, Cu, nickel, etc. unless otherwise specified. Shall be.

  In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  Moreover, in each figure of embodiment, the same or similar part is shown with the same or similar symbol or reference number, and description is not repeated in principle.

  In the accompanying drawings, hatching or the like may be omitted even in a cross section when it becomes complicated or when the distinction from the gap is clear. In relation to this, when it is clear from the description etc., the contour line of the background may be omitted even if the hole is planarly closed. Furthermore, even if it is not a cross section, hatching or a dot pattern may be added in order to clearly indicate that it is not a void or to clearly indicate the boundary of a region.

  In addition, before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  Probe inspection is an electrical test performed using a prober (semiconductor integrated circuit inspection apparatus) on a wafer that has been subjected to a wafer process (various processing steps for wafers to be performed before division). It means that an electrical inspection of a semiconductor integrated circuit is performed by applying the tip of a contact terminal to the electrode formed above. In the probe inspection, a non-defective product / defective product is discriminated by performing a function test for confirming whether or not the device operates according to a predetermined function, and a DC operation characteristic and an AC operation characteristic test. This is distinguished from a screening test (final test) that is performed after dividing into chips (or after packaging is completed).

  The probe card is a structure having a contact terminal that contacts a wafer to be inspected and a wiring board (wiring board). The prober or the semiconductor integrated circuit inspection device is an interface ring, a probe card, and an inspection object. An inspection apparatus having a sample support system including a wafer stage on which a wafer is placed.

  A tester (Test System) is for electrically inspecting a semiconductor integrated circuit and generates a signal such as a predetermined voltage and a reference timing.

  The tester head is electrically connected to the tester, receives the voltage and signal transmitted from the tester, generates a signal such as voltage and detailed timing to the semiconductor integrated circuit, and sends it to the probe card via a pogo pin or the like. The one that sends a signal.

  The interface ring is one that is electrically connected to a tester head and a probe card via a conductive path such as a pogo pin and sends a signal sent from the tester head to a probe card described later.

  A POGO pin or a spring probe has a structure in which a contact pin (plunger (contact needle)) is pressed against an electrode (terminal) by the elastic force of a spring (coil spring). The contact needle is adapted to make an electrical connection. For example, a spring arranged in a metal tube (holding member) transmits an elastic force to the contact pin via a metal ball.

  A thin film probe (membrane probe), a thin film probe sheet, or a thin film sheet is provided with the contact terminal (protrusion terminal) that comes into contact with the inspection object as described above and a wiring routed from the contact terminal. A thin film on which an electrode for contact is formed. The thin film sheet has, for example, a thickness of about 10 μm to 100 μm, and is similar to a silicon wafer used for manufacturing a semiconductor integrated circuit, that is, a wafer process, that is, a photolithography technique, a CVD (Chemical Vapor Deposition) technique, and a sputtering technique. In addition, a wiring layer and a tip portion (contact terminal) electrically connected to the wiring layer are integrally formed by a patterning technique combining etching techniques and the like. Of course, although the process is complicated, it is possible to form a part separately and combine them later.

  A contact terminal, a protruding terminal, a contactor, or a probe refers to a conductive protrusion that is in contact with an electrode (chip electrode) provided on each chip region to inspect electrical characteristics.

<Method for Manufacturing Semiconductor Integrated Circuit Device>
First, the overall flow of the method for manufacturing a semiconductor integrated circuit device according to the present embodiment will be described with reference to FIGS. FIG. 1 is an explanatory diagram showing an outline of the manufacturing flow of the semiconductor integrated circuit device of the present embodiment. 2 is a plan view showing the main surface side of the wafer prepared in the wafer preparation step shown in FIG. 1, FIG. 3 is an enlarged sectional view of a part of the wafer shown in FIG. 2, and FIG. 4 is shown in FIG. It is a top view which shows the one main surface side among the several semiconductor chips acquired by an individualization process.

  First, as a wafer preparation step shown in FIG. 1, as shown in FIG. 2, a wafer (semiconductor wafer) WH partitioned into a plurality of chip regions 10a is prepared. A semiconductor integrated circuit is formed in each of the plurality of chip regions 10a of the wafer WH, and a plurality of pads (electrodes, chip electrodes, electrode pads) 11 that are electrically connected to the semiconductor integrated circuit on the main surface (see FIG. 4). Is formed.

  An example of a method for forming the wafer WH shown in FIG. 2 will be briefly described with reference to FIG. 3. For example, the wafer WH is formed as follows. First, in the semiconductor substrate preparation step (see FIG. 1), the semiconductor substrate 12 having the main surface (device forming surface) 12a is prepared. Thereafter, in a semiconductor element formation step (see FIG. 1), a plurality of semiconductor elements (not shown) such as transistors and diodes are formed on the main surface 12a of the semiconductor substrate 12. Thereafter, the wiring layer 13 is laminated on the main surface 12a of the semiconductor substrate 12 in a chip wiring layer forming step (see FIG. 1). In FIG. 3, the example which laminated | stacked the several wiring layer 13 on the main surface 12a is shown. In this chip wiring layer forming step, a plurality of pads 11 are formed in the uppermost layer, and each pad 11 is electrically connected to a plurality of semiconductor elements on the main surface 12a via a plurality of wirings 13a provided in the wiring layer 13. . The plurality of wirings 13 a are insulated by an insulating film 13 b provided in the wiring layer 13. Through these steps, a plurality of semiconductor integrated circuits are formed on the main surface 12a side of the wafer WH. Thereafter, in a protective film forming step (see FIG. 1), a protective film (passivation film, insulating film) 14 is formed so as to cover the wiring layer and the pad 11. Then, an opening 14 a is formed in a part of the protective film 14, and the pad 11 is exposed from the protective film 14 in the opening 14 a. Through the above steps, a plurality of semiconductor chips 10 are formed on the wafer WH, and the wafer WH shown in FIG. 2 is obtained. The protective film (passivation film, insulating film) 14 is formed of, for example, a silicon nitride film, a silicon oxide film, or a laminated film of a silicon nitride film and a silicon oxide film. As shown in FIG. 4, in the present embodiment, for example, a plurality of pads 11 are arranged along each side of a semiconductor chip 10 (corresponding to the chip region 10a shown in FIG. 2) having a square shape in plan view. It has a pad group (chip electrode group). The plurality of pads 11 are arranged in a plurality of rows along the outer periphery of the chip region 10a (see FIG. 2). Although not particularly limited, in the present embodiment, the pads 11 arranged in the first row and the second row along the arrangement direction of the pad group (chip electrode group) in which the plurality of pads 11 are arranged. The pad 11 arrange | positioned in is illustrated. Along the arrangement direction of the pads, the pads 11 are arranged alternately (in a so-called staggered arrangement) so that the pads 11 arranged in the second row are arranged between the pads 11 arranged in the first row. ing. A plurality of semiconductor chips 10 are formed on the wafer WH.

  Next, as a probe inspection process shown in FIG. 1, an electrical inspection of the wafer WH shown in FIG. 2 is performed. As shown in FIG. 1, the probe inspection process includes a probe card preparation process and an electrical inspection process. In FIG. 1, for convenience of explanation, the wafer preparation process and the probe inspection process are shown separately, but the wafer preparation process may be included in the probe inspection process. Details of the probe inspection process will be described later.

  Next, as the individualization step shown in FIG. 1, the wafer WH shown in FIG. 2 is divided into chip regions 10a, and a plurality of semiconductor chips (semiconductor integrated circuit devices) 10 shown in FIG. 4 are obtained. In this step, for example, the wafer WH is cut along the scribe regions 10b arranged between each of the plurality of chip regions 10a shown in FIG. 2 and separated into individual chip regions 10a. Through the above steps, the semiconductor chip 10 which is the semiconductor integrated circuit device of the present embodiment is obtained. The above describes the outline of the main steps among the steps of manufacturing a semiconductor chip, and various modifications can be applied.

<Semiconductor integrated circuit inspection equipment>
Next, an outline of a semiconductor integrated circuit inspection apparatus used in the probe inspection process shown in FIG. 1 will be described. 5 is an explanatory view schematically showing a schematic configuration of the semiconductor integrated circuit inspection apparatus used in the probe inspection step shown in FIG. 1, FIG. 6 is a cross-sectional view showing the entire structure of the probe card shown in FIG. FIG. 6 is a plan view showing a surface (main surface) facing the wafer of the probe card shown in FIG. 5. 6 is a cross-sectional view taken along line AA in FIG.

  As shown in FIG. 5, the prober (semiconductor integrated circuit inspection apparatus) PR of the first embodiment includes a probe card PRC, a tester head THD, an interface ring IFR, a card holder CHD, a wafer stage WST, and a wafer chuck (wafer holding). G) It is formed from WCH or the like. The tester head THD and the interface ring IFR, and the interface ring IFR and the probe card PRC are electrically connected via a plurality of pogo pins PGP, respectively, so that the tester head THD and the probe card PRC are connected to each other. They are electrically connected. The tester head THD is electrically connected to the tester T, and a voltage and a signal current necessary for probe inspection are supplied from the tester T.

  The card holder CHD mechanically connects the probe card PRC to the prober PR, and has a mechanical strength that prevents the probe card PRC from being warped by the pressure from the pogo pin PGP. In addition, wafer stage WST is disposed in the housing of prober PR, and wafer chuck WCH is disposed and fixed on wafer stage WST. The wafer WH to be inspected is fixed to the wafer chuck WCH with the main surface 12a (see FIG. 3) on which the plurality of pads 11 (see FIG. 4) are formed facing the probe card PRC.

  Next, the structure of the probe card PRC shown in FIG. 5 will be described. As shown in FIG. 6, the probe card PRC has a wiring board 1 on which a plurality of wirings 1c are formed. The probe card PRC has a thin film sheet 2 held on the wiring board 1. The thin film sheet 2 has a main surface (contact terminal forming surface) 2a on which a plurality of contactors (contact terminals) 3 are formed, and a back surface 2b located on the opposite side of the main surface 2a. The main surface 2a is a wafer WH (see FIG. 5) is held on the wiring board 1 so as to face the main surface side. Further, the probe card PRC has a pressing portion 4 that presses an area of the thin film sheet 2 where the contactors 3 are formed (contactor arrangement area 2c shown in FIG. 7) from the back surface 2b. In addition, the probe card PRC has a pressurizing unit 5 that applies a load to the pressing unit 4 and the thin film sheet 2 via the connecting jig 5a. The details of the pressing unit 4 and the pressing unit 5 will be described later.

  The wiring board 1 is a plate material having a lower surface (sheet holding surface) 1a and an upper surface (back surface) 1b located on the opposite side of the lower surface 1a, and forming a circle in plan view (see FIG. 7 for the planar shape). The wiring board 1 of the present embodiment is a so-called multilayer wiring board in which a plurality of wiring layers are laminated between a lower surface 1a and an upper surface 1b. A plurality of wirings 1c are formed in each wiring layer, and the lower surface 1a side and the upper surface 1b side are electrically connected. On the lower surface 1 a of the wiring substrate 1, a plurality of receiving portions (not shown) that are electrically connected to the plurality of wirings 1 c are formed. The plurality of receiving portions are electrically connected to a plurality of pogo (POGO) seats 1d provided on the upper surface 1b of the wiring board 1 through the plurality of wirings 1c. The pogo seat 1d is a terminal that receives a pogo pin PGP (see FIG. 5) for inputting or outputting a signal between the tester head THD (FIG. 5) and the probe card. That is, the pogo seat 1d is an external terminal of the wiring board 1 (probe card PRC). Therefore, as shown in FIG. 7, a large number of pogo seats 1 d are arranged on the upper surface side of the wiring board 1. Further, the lower surface 1a of the wiring board 1 is connected and fixed to the card holder CHD (see FIG. 5).

  The thin film sheet 2 has the main surface 2a and the back surface 2b as described above, and has a circular shape with a diameter smaller than that of the wiring substrate 1 in plan view. Although details will be described later, the thin film sheet 2 is a thin film having a base material containing, for example, a polyimide resin as a main component, and has flexibility. The thin film sheet 2 is fixed and held on the wiring board 1 by the connecting jig 6 with the back surface 2b facing the lower surface 1a of the wiring board 1. As shown in FIG. 7, the peripheral portion of the thin film sheet 2 and the region inside the peripheral portion are fixed to the wiring substrate 1 by a plurality of connection jigs 6 having a ring shape.

  In addition, an opening 1e is formed in the center of the wiring board 1. Inside the opening 1e, the opening 1e is fixed on the upper surface 1b of the wiring board 1, and in the opening 1e to a position below the lower surface 1a of the wiring board 1. An extending overhang ring 7 is arranged. The region where the plurality of contactors 3 of the thin film sheet 2 are formed is projected downward from the wiring substrate 1 by the projecting ring 7 and is disposed below the lower surface of the card holder CHD (see FIG. 5). . An adhesive ring 8 is disposed inside the overhang ring 7. The adhesive ring 8 is bonded to the back surface 2b side of the thin film sheet 2 via an adhesive (for example, an epoxy adhesive), and is connected and fixed to the pressure unit 5 via a connecting jig such as a bolt. Thereby, it is possible to prevent slack in the thin film sheet 2 when a load is applied by the pressing unit 5 or when the thin film sheet 2 is pressed by the pressing unit 4.

  The pressing unit 4 includes a plunger 4a, a pressing piece 4b as a pressing tool, and an elastomer (buffer layer, elastic member) 4c disposed on the lower surface (pressing surface) side of the pressing piece 4b. The pressing unit 4 extends the thin film sheet 2 by pushing the plunger 4a from the back surface (upper surface) 2b through the push piece 4b and the elastomer 4c and pushing out the push piece 4b in the region where the contactor 3 is formed. Then, the position of the tip of each contactor 3 is adjusted so as to face the corresponding pad 11 (see FIG. 4). The plunger 4a is fixed to the housing of the probe card PRC. Further, since the wiring board 1 is also fixed to the housing of the probe card PRC, the plunger 4a is fixed to the wiring board 1 through this housing. A spring 4d is built in the plunger 4a, and a constant pressing force is transmitted to the push piece 4b, the elastomer 4c and the thin film sheet 2 through the push pin 4e by the elastic force of the spring 4d. In the first embodiment, 42 alloy can be exemplified as the material of the push piece 4b. Moreover, a silicon sheet can be illustrated as the elastomer 4c.

  Further, the pressing unit 5 includes a connecting jig 5a that connects the pressing unit 4 and the pressing unit 5, and a plurality of (two in FIG. 6) springs 5b that are fixed to the connecting jig 5a. Although not shown, the springs 5b are arranged at about 8 to 12 locations on the plane of the wiring board 1, for example. One end of the spring 5b is fixed to the wiring board 1, and the other end is fixed to the connecting jig 5a. The elastic force of the spring 5b acts on the connecting jig 5a when the contactor 3 comes into contact with the pad 11 (see FIG. 4) during probe inspection and the probe card PRC is pushed toward the pad 11. At this time, the pressing part 5 is fixed to the pressing part 4 and the adhesive ring 8, and the connecting jig 5a, the pushing piece 4b, the elastomer 4c, the adhesive ring 8 and the plunger 4a are integrated (pressure mechanism). The elastic force of the spring 5b acts to push down these integrated members toward the pad 11. For this reason, the pressing force transmitted from the spring 4 d in the plunger 4 a to the thin film sheet 2 is mainly used for stretching the thin film sheet 2.

  In the probe inspection process (see FIG. 1), after the thin film sheet 2 is held on the wiring board 1, the contactor arrangement region (contact terminal arrangement region) 2c in which a plurality of contactors 3 are formed is pressed out of the thin film sheet 2 The portion 4 is pressed from the back surface 2b side through an elastomer (buffer layer, elastic member) 4c. Thereby, the thin film sheet 2 is stretched, and the plurality of contactors 3 arranged on the main surface 2a are aligned at a predetermined position (positions facing the plurality of pads 11 (see FIG. 4) in the electrical inspection process). (Sheet stretching process). This sheet stretching process is performed in advance before the contactors 3 and the pads 11 (see FIG. 4) are brought into contact with each other in the electrical inspection process (see FIG. 1). For example, the sheet stretching process is included in the probe card preparation process shown in FIG. In the electrical inspection process (see FIG. 1), the elastic force of the spring 5 b of the pressurizing unit 5 is made to contact the pressing unit 4 by bringing the contactors 3 and the pads 11 (see FIG. 4) into contact with each other. Is transmitted to the plurality of contactors 3 of the thin film sheet 2 (pressurizing step).

  By the way, the thin film sheet 2 described in detail below can also be applied to a modification of the probe card PRC of the present embodiment shown in FIG. For example, the present invention can be applied to a modification in which the pressurizing unit 5 shown in FIG. 6 is not disposed and the plunger 4 a of the pressing unit 4 is fixed to the wiring board 1. In this case, load control to the pad 11 (see FIG. 4) is performed only by the plunger 4a. However, the plunger 4 a is also used to push out the push piece 4 b and cause the thin film sheet 2 to protrude downward from the lower surface 1 a of the wiring board 1. Therefore, in the present embodiment, the pressing unit 4 and the pressing unit 5 are provided in order to reliably project the thin film sheet 2 below the lower surface 1a of the wiring board 1 and bring the contactor 3 into contact with the pad 11 with a low load. The provided probe card PRC is adopted.

<Detailed structure of thin film sheet>
Next, the detailed structure of the thin film sheet 2 shown in FIGS. 6 and 7 will be described. FIG. 8 is a plan view showing an outline of the wiring layout of the thin film sheet shown in FIG. 9 is an enlarged plan view of the contactor arrangement region shown in FIG. 7, FIG. 10 is an enlarged plan view of a portion B in FIG. 9, and FIG. 11 is an enlarged sectional view taken along the line CC in FIG. It is. 12 is an enlarged plan view showing the shape of the back surface side of the thin film sheet shown in FIG.

  As shown in FIG. 9, a plurality of contactors 3 are formed in the contactor arrangement region (contact terminal arrangement region) 2 c arranged on the main surface 2 a side of the thin film sheet 2. In the present embodiment, the wafer WH (see FIG. 2) in which a plurality of pads 11 (see FIG. 4) are arranged along each side of the chip region 10a (see FIG. 2) that forms a quadrangle in plan view is inspected. . For this reason, the contactor arrangement | positioning area | region 2c shown in FIG. 9 comprises a square in planar view, and the several contactor 3 is each arrange | positioned along each edge | side. In other words, a contactor group (contact terminal group) 3A in which a plurality of contactors 3a are formed is arranged along the first side among the four sides constituting the outer edge of the contactor arrangement region 2c. A contactor group (contact terminal group) 3B in which a plurality of contactors 3b are formed is disposed along a second side that intersects the first side. Further, a contactor group (contact terminal group) 3C in which a plurality of contactors 3c are formed is arranged along a third side that faces the first side. Further, a contactor group (contact terminal group) 3D in which a plurality of contactors 3d are formed is arranged along a fourth side facing the second side.

  As shown in FIGS. 10 and 11, the thin film sheet 2 has a polyimide film (insulating film) 22 having a main surface (contact terminal forming surface) 2a. The plurality of contactors 3 are fixed to the main surface 2 a of the polyimide film 22. As shown in FIG. 10, the plurality of contactors 3a are arranged along the extending direction (arrangement direction) of the contactor group 3A. Each contactor 3 of the thin film sheet 2 is formed to be disposed at a position facing the plurality of pads 11 shown in FIG. Therefore, in the present embodiment, the plurality of contactors 3a are arranged in a plurality of rows (two rows in FIG. 10) along the extending direction (arrangement direction) of the contactor group 3A. In other words, the plurality of contactors 3a include contactors (first row contact terminals) 3a arranged in the first row and contactors arranged in the second row along the arrangement direction of the contactor group 3A. 2nd row contact terminal) 3a is included. Then, along the arrangement direction of the contactor group 3A, the contactors 3a arranged in the second row are arranged between the contactors 3a arranged in the first row alternately (so-called staggered arrangement). ) Is arranged. In addition, in FIG. 10, among the contactor groups 3A, 3B, 3C, and 3D shown in FIG. 9, an enlarged view of the contactor group 3A is exemplarily shown. Although illustrations of enlarged views of the other contactor groups 3B, 3C, and 3D are omitted, in each of the contactor groups 3B, 3C, and 3D, a plurality of contactors 3b, along the extending direction of the contactor groups 3B, 3C, and 3D, respectively. 3c and 3d are arranged in a plurality of rows (in this embodiment, two rows). Hereinafter, the peripheral structure of the contactor 3 will be described by taking the contactor 3a as an example. However, the peripheral structures of the contactors 3b, 3c, and 3d are the same except for the case where the structure is different.

  As shown in FIG. 11, the plurality of contactors 3 are each made of a metal film 21. In the present embodiment, for example, a rhodium film 21a and a nickel film 21b are sequentially laminated from the lower layer. The contactor 3 is a metal film 21 patterned in a planar square shape in the thin film sheet 2, and is formed so as to protrude downward from the main surface 2 a of the thin film sheet 2. Various modifications can be applied to the shape of the contactor 3, but in the present embodiment, a shape in which a protrusion formed in a quadrangular pyramid shape is formed on the lower surface of the pedestal formed in the shape of a prism. It has become. A part of the side surface of the pedestal is covered with the polyimide film 22. Thus, by forming the pedestal portion on the protrusion of the contactor 3, the height of the contactor 3 can be increased. For this reason, when performing a probe test | inspection, the distance from the main surface 2a of the thin film sheet 2 to the front-end | tip of the contactor 3 can be lengthened. For example, in this Embodiment, the distance from the main surface 2a of the thin film sheet 2 to the front-end | tip of the contactor 3 is about 50 micrometers. Thereby, it can prevent thru | or suppress that the polyimide film 22 and the surface of the wafer WH (refer FIG. 2) which are to-be-inspected objects contact at the time of a probe test | inspection.

  The thin film sheet 2 has a plurality of wirings 23 formed between the polyimide film 22 and the back surface 2b. The plurality of wirings 23 are laminated films in which a conductor film 23a and a conductor film 23b are sequentially laminated from the lower layer. The conductor film 23a is a base conductor film for forming the wiring 23. For example, a chromium film having a film thickness of about 0.1 μm and a copper film having a film thickness of about 1 μm are sequentially deposited by sputtering or vapor deposition. A film can be formed. Further, the conductor film 23b is a main conductor film that reduces the parasitic inductance (for example, wiring resistance) of the wiring 23. For example, a copper film or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer is exemplified. Can do. The plurality of wirings 23 are covered with a polyimide film 25. In other words, in the thin film sheet 2, a wiring layer 24 including a plurality of wirings 23 and a polyimide film 25 that is an insulating film covering the wirings 23 is laminated on the polyimide film 22.

  Each of the plurality of wirings 23 is led out to a connection portion (for example, the receiving portion described above) with the wiring substrate 1 shown in FIG. 6 and is electrically connected to the plurality of wirings 1 c of the wiring substrate 1. In the present embodiment, as shown in FIG. 11, a wiring layer 24 having a plurality of wirings 23 is laminated, and a lower wiring layer 24a and an upper wiring layer 24b arranged on the polyimide film 22 are electrically connected. Connected. Each of the wiring layers 24 a and 24 b includes a plurality of wirings 23 and a polyimide film (insulating film) 25 that covers the plurality of wirings 23. A through hole (opening) TH1 is formed in the polyimide film 25 on the wiring 23 of the lower wiring layer 24a, and the wiring 23 of the upper wiring layer 24b and the wiring 23 of the lower wiring layer 24a are formed at the bottom of the through hole TH1. The wiring 23 is electrically connected. Thereby, even if the arrangement pattern of the contactor 3 is narrow pitch and multi-pin, a space for drawing out the wiring 23 can be secured. Although FIG. 11 shows an example in which two wiring layers 24 are stacked, the number of wiring layers 24 is not limited to this. For example, the wiring layer 24 can be formed as a single layer structure without being stacked. Further, for example, the wiring layer 24 can be further laminated to form a laminated structure of three or more layers.

  The plurality of wirings 23 are electrically connected to the plurality of contactors 3, respectively. As shown in FIG. 11, a through hole (opening) TH2 is formed on the contactor 3 of the polyimide film 22, and the wiring 23 and the contactor 3 formed on the polyimide film 22 are electrically connected to the bottom of the through hole TH2. It is connected to the. In the present embodiment, the through hole TH <b> 2 forms the through hole TH <b> 2 directly above the contactor 3. Thus, by arranging the through hole TH2 immediately above the contactor 3, the arrangement space of the through hole TH2 can be reduced, so that the pitch of the contactor 3 can be reduced.

  As shown in FIG. 10, among the plurality of wirings 23, the plurality of wirings 23 connected to the plurality of contactors 3a intersect (for example, orthogonal) with the extending direction (arrangement direction) of the contactor group 3A in plan view. It is arranged so as to extend along the direction of In the present embodiment, as described above, the plurality of contactors 3a in the first row and the plurality of contactors 3a in the second row are arranged in a staggered arrangement. For this reason, the wiring 23 connected to the contactor 3a in the second column is arranged between the adjacent contactors 3a arranged in the first column, and the adjacent contactors 3a arranged in the second column are arranged. Between them, wirings 23 connected to the contactors 3a in the first row are arranged. In this way, by extending the plurality of wirings 23 along the direction intersecting (orthogonal) with the extending direction (arrangement direction) of the contactor group 3A, it is possible to secure a space for drawing out the wirings 23. Moreover, as FIG. 8 shows, the wiring 23 is further drawn out radially toward the outer edge (periphery part) of the thin film sheet 2 from there. A plurality of receiving portions (not shown) of the wiring board 1 shown in FIG. 6 and a plurality of wirings 23 are electrically connected in the vicinity of the periphery of the thin film sheet 2. End portions of the plurality of wirings 23 in the contactor arrangement region 2 c extend further to the inside than the contactor 3. The wirings 23 of the wiring layers 24a and 24b are configured so that the density is uniform in order to make the stress of the thin film sheet 2 uniform. Further, the wiring 23 of the wiring layers 24a and 24b may include a dummy wiring 23D. By forming a plurality of dummy wirings 23D in a region where the wiring 23 is not formed, the area of the region where the wiring 23 is not formed is reduced. Thereby, since the hardness and rigidity of the thin film sheet 2 become uniform, it is possible to prevent or suppress the occurrence of slack in the sheet stretching process.

  Further, as shown in FIGS. 10, 11 and 12, the thin film sheet 2 has a polyimide film (insulating film) 26 having a back surface 2b. The polyimide film 26 is disposed on the wiring layer 24b. The wiring layer 24a is disposed so as to cover the wiring layer 24b (polyimide film 25), which is an upper layer. On the back surface 2b of the thin film sheet 2, a protruding portion 2d is formed. Specifically, a band member 27 formed in a band shape is disposed between the upper wiring layer 24 a (polyimide film 25) and the polyimide film 26. In FIG. 12, the wiring layers 24a and 24b shown in FIG. 11 are not shown in order to facilitate understanding of the positional relationship between the contactor 3a and the band member 27. Since the polyimide film 26 covering the upper surface of the polyimide film 25 is formed following the pattern of each member disposed below the polyimide film 26, the periphery of the region overlapping the band member 27 of the polyimide film 26 is more than the other regions. Is a protruding portion 2d protruding upward. As shown in FIG. 12, the band member 27 and the protruding portion 2d formed following the band member 27 are arranged so as to extend along the contactor group 3A on both sides of the contactor group 3A in plan view. . A more detailed structure of the band member 27 and the protruding portion 2d and the reason for forming the protruding portion 2d will be described later.

  The thin film sheet 2 is formed by sequentially laminating members of each layer from the plurality of contactors 3 arranged in the lower layer to the polyimide film 26 arranged in the uppermost layer. Hereafter, the process of forming the thin film sheet 2 simply using FIG. 13 is demonstrated. FIG. 13 is an enlarged cross-sectional view showing an assembly process of the thin film sheet shown in FIG.

  First, a thin film sheet forming substrate (for example, a silicon substrate) 40 is prepared, and openings (holes) 40 a for forming a plurality of contactors 3 are formed on the substrate 40. Thereafter, a conductive film 41 used for plating formation of the contactor 3 and the like is formed on the substrate including the opening 40a. Thereafter, a thin film 42 of about 10 μm to 20 μm made of copper, for example, is formed around the opening 40a in a state where the opening 40a is masked (not shown). In the structure shown in FIG. 11, the region where the thin film 42 is not formed becomes the contactor 3. Then, after removing the mask that closes the opening 40a, a mask (not shown) that covers the periphery of the opening is formed, and a conductive film that covers the surface of the contactor 3 is formed by electrolytic plating using the conductive film 41 as an electrode. A rhodium film (conductive film) 21a and a nickel film (conductive film) 21b are sequentially deposited. At this time, the rhodium film 21a and the nickel film 21b are formed following the shape of the base of the film formation region. Thereafter, after exposing the thin film 42, a mask (not shown) is formed so as to cover the nickel film 21 b, and a thin film 43 of about 10 μm to 20 μm made of, for example, copper is further formed on the thin film 42. By forming the second-layer thin film 43, a step portion of the polyimide film 22 that covers a part of the side surface of the contactor 3 later is formed. Thereafter, the mask on the nickel film 21b is removed, and a nickel film 21b is further deposited on the nickel film 21b by electrolytic plating. Through the steps so far, the shape of the contactor 3 shown in FIG. 11 is formed. Since the upper surface of the contactor 3 is formed following the shape of the base of the film formation region, the peripheral portion is raised more than the central portion as shown in FIG.

  Thereafter, the mask is removed, and a polyimide film 22 (see also FIG. 9) is formed so as to cover the contactor 3 and the upper thin film 43 described above. At this time, since the polyimide film 22 is formed following the shape of the base of the film formation region, the upper peripheral portion of the upper surface of the contactor 3 is formed higher than the surroundings as shown in FIG. Thereafter, a through hole TH2 reaching the upper surface of the contactor 3 is formed in the polyimide film 22. Subsequently, conductor films 23a and 23b are sequentially laminated on the polyimide film 22 including the inside of the through hole TH2. Thereby, the wiring 23 electrically connected to the contactor 3 is formed. Thereafter, a polyimide film 25 is formed on the polyimide film 22 and the wiring 23. As a result, the lower wiring layer 24a is formed. Thereafter, the through hole TH1 is formed in the same procedure, and then the wiring 23 and the polyimide film 25 constituting the upper wiring layer 24a are sequentially laminated.

  Thereafter, a metal film 27 a and a metal film 27 b are sequentially laminated on the upper surface of the polyimide film 25 from the lower layer to form the band member 27. The metal film 27a is a base metal film for forming the band member 27. For example, a chromium film with a film thickness of about 0.1 μm and a copper film with a film thickness of about 1 μm are sequentially deposited by sputtering or vapor deposition. To form a film. The metal film 27b is a main metal film for securing a film thickness necessary for the band member 27. For example, a copper film or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer is formed. . Next, a polyimide film 26 is formed on the wiring layer 24 b and the band member 27. Thus, in the thin film sheet 2 of the present embodiment, which is formed by laminating the members in order from the lower layer, the upper layer member is formed following the planar shape of the lower layer. For this reason, the upper surface of the polyimide film 26 arranged in the uppermost layer, that is, the back surface 2b of the thin film sheet 2 is formed so as to cover the belt member 27 with the height of the region 2e located on the contactor 3 higher than the surroundings. The protrusion 2d has a higher upper surface than the region 2e. Then, when the substrate 40, the conductive film 41, and the thin films 42 and 43 are removed, the thin film sheet 2 shown in FIG. 11 is obtained.

<Examination of Comparative Example>
Next, a more detailed structure of the band member 27 and the protruding portion 2d and the reason for forming the protruding portion 2d will be described in detail.

  First, the problems that occur in the electrical inspection process shown in FIG. 1 will be described using a comparative example, and then the detailed structure of the present embodiment will be described. 30 is an enlarged cross-sectional view showing a state in which the contactor and the pad of the wafer are brought into contact with each other using the thin film sheet as the first comparative example with respect to FIG. 11, and FIG. 31 is a second comparative example with respect to FIG. It is an expanded sectional view which shows the state which contacted the contactor and the pad of the wafer using the thin film sheet. 30 and 31 is the same as the present embodiment except for the structure of the back surface of the thin film sheet. Therefore, in the following description, other members of the probe card to which the thin film sheet is attached will be described with reference to FIG.

  First, the thin film sheet 50 shown in FIG. 30 is different from the present embodiment in that the band member 27 and the polyimide film 26 of the thin film sheet 2 shown in FIG. 11 are not formed. That is, in the thin film sheet 50, the upper surface of the polyimide film 25 disposed in the upper layer is the back surface 50 b of the thin film sheet 50. About another point, it is the same as that of the thin film sheet 2 of this Embodiment.

  As shown in FIG. 30, in the probe inspection process (see FIG. 1), after the sheet stretching process, the tips of the contactors 3 of the thin film sheet 50 are brought into contact with the pads 11 of the wafer WH, respectively. Perform electrical inspection of integrated circuits. In FIG. 30, an elastomer 4 c is disposed between the push piece 4 b and the back surface 50 b of the thin film sheet 50 from the viewpoint of alleviating the impact at the time of contact between the contactor 3 and the pad 11. Also, from the viewpoint of improving the slidability at the adhesion interface between the pressing portion 4 and the back surface 50b of the thin film sheet 50, a polyimide sheet formed separately from the thin film sheet 50 between the elastomer 4c and the back surface 50b of the thin film sheet 50. 4f is arranged. FIG. 30 shows an example in which two polyimide sheets 4f that are formed separately from each other are arranged so as to overlap each other. That is, the contact pressure between the contactor 3 and the pad 11 is adjusted mainly by the load applied from the pressurizing unit 5 (see FIG. 6) in the pressurizing step, but these loads are elastomers which are elastic bodies. It is transmitted to the thin film sheet 2 through 4c. Therefore, when the contactor 3 and the pad 11 are brought into contact with each other, if the elastomer 4c is locally deformed by the reaction force received from the thin film sheet 50, the load transmitted to each contactor 3 changes.

  Here, as shown in FIG. 30, the height of the region 50c located on the plurality of contactors 3 in the back surface 50b of the thin film sheet 50 is higher than the height of the surrounding region of the region 50c. In other words, the back surface 50b of the thin film sheet 50 has a region (protruding portion) 50c that protrudes from the surrounding region immediately above the contactors 3. Since the thin film sheet 50 is formed by sequentially laminating a plurality of metal patterns and a resin film such as polyimide from the main surface 2a side, as in the thin film sheet 2 (see FIG. 11) of the present embodiment, the thin film sheet 50 is disposed in the upper layer. The upper surface of the resin film (for example, polyimide film 25) is an uneven surface following the metal pattern (for example, contactor 3 or wiring 23) disposed in the lower layer. In particular, in the case of a structure in which the through hole TH2 is formed on the contactor 3 and the wiring 23 and the contactor 3 are electrically connected on the contactor 3, the region 50c of the back surface 50b disposed on the contactor 3 is compared with the surroundings. Prone to a protruding structure.

  Then, when the contactor 3 of the thin film sheet 50 having the region 50c projecting from the periphery is brought into contact with the pad 11, a part of the elastomer 4c disposed on the region 50c is indicated by an arrow 30 in FIG. Flows (moves) around the region 50c, and the thickness of the elastomer 4c on the contactor 3 decreases. As a result, in the protruding region 50c on the contactor 3, the reaction force from the elastomer 4c increases, and the load transmitted per unit area increases. The amount of this transmission load varies depending on the height difference between the region 50c and the peripheral region. For example, if the height difference between the region 50c and the peripheral region is large, the flow amount of the elastomer 4c flowing in the peripheral region increases, and the transmission load increases. On the other hand, if the height difference between the region 50c and the peripheral region is small, the flow amount of the elastomer 4c flowing to the peripheral region is small, and the transmission load is small. Here, it is considered that the load transmitted to the region 50c on each contactor 3 can be made uniform if the area of the region 50c and the height difference with the peripheral region are made uniform on all the contactors 3. . However, in view of processing accuracy or restrictions on the layout of the contactors 3 and the wirings 23, it is difficult to make the area of the region 50c and the height difference with the peripheral region uniform on all the contactors 3. It is. For this reason, the contact pressure of the contactor 3 and the pad 11 varies according to the variation in the height difference between the region 50c arranged on each contactor 3 and the peripheral region.

  When the variation in the contact pressure is large, the contact resistance becomes non-uniform, causing a failure to perform an accurate electrical inspection. For example, at a location where the contact pressure is low, a signal current for inspection does not flow, causing a conduction failure (open failure). Moreover, if the contact pressure is too large, the wafer to be inspected may be damaged. From the viewpoint of preventing the wafer from being damaged, it is effective to reduce the central value (designed contact pressure) of the variation of the contact pressure. For this purpose, it is necessary to further reduce the variation margin. . Particularly in recent years, there has been a demand for further reducing the contact pressure between the contactor 3 and the pad 11 from the viewpoint of preventing damage to the wafer to be inspected during probe inspection. For example, from the viewpoint of improving the circuit operation of the semiconductor chip 10 (see FIG. 4), as the insulating film 13b, which is an interlayer insulating film, an insulating film having a relative dielectric constant lower than that of the protective film 14, for example, less than about 3.0. There is a technique using a low-k insulating film). As a method of forming the low-k insulating film, for example, there is a method of forming a silica glass material such as SiOC by a CVD (Chemical Vapor Deposition) method. In addition, for example, there is a method of forming a carbon-containing silicon oxide-based material by a CVD method, or a method of reducing the relative dielectric constant by making the insulating film have a porous structure. The low-k insulating film described above has an electrical characteristic that the relative dielectric constant is lower than that of the protective film 14, but also has a characteristic that the mechanical strength (breakage resistance) is lower than that of the protective film 14. Yes. For this reason, when the contact pressure between the contactor 3 and the pad 11 is high, the insulating film 13b and the circuit are destroyed.

  Next, the inventor of the present application considered that the cause of the above problem is that the flatness of the back surface 50b is low, and studied the second comparative example shown in FIG. The thin film sheet 51 shown in FIG. 31 has a thickness of the uppermost polyimide film 52 having the back surface 51b formed thicker than that of the lower layer polyimide film 25, and the thin film sheet 51 shown in FIG. 50. About another point, it is the same as that of the thin film sheet 50 shown in FIG. Since the polyimide resin constituting the polyimide film 52 is a softer material than the metal material, the uneven surface following the metal pattern of the lower layer can be improved by forming it thick. That is, the back surface 51b can be flattened. However, according to the study of the present inventors, the present inventors have newly found that even when the thin film sheet 51 is used, the contact pressure between the contactor 3 and the pad 11 varies.

  The cause is considered to be as follows. That is, when the back surface 51b is flattened, the amount of load transmitted per unit area of the back surface 51b can be made uniform, but is transmitted to each contactor 3 by the layout of the contactor 3 and the wiring 23 of the thin film sheet 51. This is because the amount of load varies. As described above, the plurality of contactors 3 are formed on the main surface 2a side so as to be disposed at positions facing the pads 11 of the wafer WH to be inspected. Since the arrangement pattern of the plurality of pads 11 on the wafer WH is determined by the requirements on the circuit formed in the chip region, not all of them are necessarily arranged at equal intervals. For this reason, not all the plurality of contactors 3 formed on the main surface 2a of the thin film sheet 51 are arranged at equal intervals. For example, in one contactor group 3A (see FIG. 10), adjacent contactors 3 are arranged at a first interval (dense arrangement region) and arranged at a second interval wider than the first interval. There may be a region (a scattered arrangement region). Also, for example, in one contactor group 3A, the contactor 3 arranged at the end of the contactor group 3A has another contactor 3 arranged next to one, but the contactor 3 is arranged next to the opposite side. Not placed. Thus, the contactor 3 arranged in the scattered arrangement region or the contactor 3 arranged at the end of the contactor group 3A has a higher contact pressure than the contactor 3 arranged in the dense region. This is because it is difficult to disperse the load transmitted to the periphery of the contactor 3 at the scattered arrangement region and the end of the contactor group 3A, and therefore, the load transmitted to one contactor 3 is larger than the dense arrangement region. Thus, the present inventors have newly found that variation in contact pressure cannot be sufficiently suppressed by simply flattening the back surface 51 b of the thin film sheet 51.

<Details of the protrusion on the back surface of the thin film sheet of the present embodiment>
Next, based on the examination result of the comparative example, a more detailed structure of the belt member 27 and the protruding portion 2d of the present embodiment and a preferred embodiment will be described. 14 is an enlarged cross-sectional view showing a state in which pressing is started from the back surface of the thin film sheet shown in FIG. 11, and FIG. 15 shows a state in which the contactor and the pad of the wafer are brought into contact using the thin film sheet shown in FIG. It is an expanded sectional view. FIG. 16 is an enlarged cross-sectional view showing a state where the back surface of the thin film sheet is pressed by the pressing portion in the cross section taken along the line DD in FIG. 10. FIG. 17 is an enlarged plan view showing the back side of the E portion of the thin film sheet shown in FIG.

  In the probe inspection process (see FIG. 1) of the present embodiment, a pressurizing process is performed after the above-described sheet stretching process. For example, as shown in FIG. The semiconductor integrated circuit is electrically inspected by bringing it into contact with each of the plurality of pads 11. In the present embodiment, as in the comparative example shown in FIGS. 30 and 31, the elastomer 4 c is interposed between the push piece 4 b and the back surface 2 b of the thin film sheet 2 from the viewpoint of alleviating the impact at the time of contact between the contactor 3 and the pad 11. Place. Further, from the viewpoint of improving the slidability at the adhesion interface between the pressing portion 4 and the back surface 2b of the thin film sheet 2, a polyimide sheet formed separately from the thin film sheet 2 between the elastomer 4c and the back surface 2b of the thin film sheet 2 4f is further arranged. FIG. 15 shows an example in which two polyimide sheets 4f, which are formed separately from each other, are arranged so as to overlap each other. The elastomer 4c and the polyimide sheet 4f can be simply disposed between the pressing piece 4b and the back surface 2b of the thin film sheet 2 and fixed by the pressing force of the pressing portion 4 (see FIG. 6). Then, the lower surface of the push piece 4b and the upper surface of the elastomer 4c are bonded and fixed. As a result, the pressing piece 4b and the elastomer 4c are integrated, and a pressing tool in which an elastic member is disposed on the pressing surface side is obtained. In the present embodiment, the polyimide sheet 4f is bonded and fixed to the lower surface of the elastomer 4c. As a result, the pressing piece 4b, the elastomer 4c, and the polyimide sheet 4f are integrated, and the pressing tool is provided with a polyimide film having good sliding properties with the thin film sheet 2 on the pressing surface.

  Here, since the thin film sheet 2 of the present embodiment is formed by sequentially laminating a plurality of metal patterns and a resin film such as polyimide from the main surface 2a side, the upper surface (thin film) of the polyimide film 26 disposed in the uppermost layer. The back surface 2b) of the sheet 2 is an uneven surface following a metal pattern (for example, the contactor 3 or the wiring 23) arranged in the lower layer. And since the through hole TH2 is formed on the contactor 3 and the wiring 23 and the contactor 3 are electrically connected on the contactor 3, the region 2e of the back surface 2b arranged on the contactor 3 protrudes as compared with the surroundings. Yes. In other words, of the back surface 2b of the thin film sheet 2, the height of the region 2e located on the plurality of contactors 3 is the height of the region around the region 2e (for example, the region 2f between the region 2e and the protruding portion 2d). It is higher than that.

  Therefore, in the present embodiment, as shown in FIGS. 14 and 15, the protruding portions 2d are formed on both sides of the region 2e. The height of the protruding portion 2d is higher than the height of the region 2e. In other words, among the back surface 2b of the thin film sheet 2, the height of the plurality of regions 2e located on the plurality of contactors 3 is lower than the height of the protruding portion 2d and between the plurality of regions 2e and the protruding portion 2d. Higher than the height of the region 2f. In addition, as shown in FIG. 12, the protruding portion 2d is arranged apart from the contactor group 3A in plan view, and therefore the height of the protruding portion 2d can be easily aligned as compared with the region 2e on the contactor 3. In the present embodiment, the projecting portion 2d is disposed away from the contactor 3 in plan view. For this reason, the dispersion | variation in the load transmitted to the contactor 3 can be reduced, and the contact pressure of each contactor 3 can be equalized. The reason for this will be described below in the probe inspection process shown in FIG.

  First, as the above-described sheet stretching process, as shown in FIG. 14, the back surface 2 b side of the contactor arrangement area 2 c of the thin film sheet 2 is pressed by the pressing portion 4, and the contactor arrangement area 2 c of the thin film sheet 2 is pressed downward. The sheet 2 is spread along the pressing portion without slack. At this time, on the back surface 2b, the upper surface of the protruding portion 2d disposed at the highest position and the pressing portion 4 (specifically, the lower surface of the polyimide sheet 4f disposed in the lowermost layer) are in close contact. When the upper surface of the projecting portion 2d is in close contact with the pressing portion 4 and further pressed, the polyimide sheet 4f of the pressing portion 4 is deformed following the shape of the projecting portion 2d, and the elastomer 4c is softer than the projecting portion 2d and the polyimide sheet 4f. The polyimide sheet 4f on the protrusion 2d bites into. In other words, a part of the elastomer 4c on the protrusion 2d flows (deforms) around the protrusion 2d. On the other hand, since the region between the two protrusions 2d is at a lower position than the protrusion 2d, deformation due to the flow of the elastomer 4c on the contactor 3 can be suppressed. For this reason, the pressing force applied from the pressing portion 4 to the thin film sheet 2 is the largest on the protruding portion 2d, and the pressing force applied to the region 2e on the contactor 3 sandwiched between the protruding portions 2d is the protruding portion 2d. Smaller than above. For example, as shown in FIG. 15, a gap may be formed between the region 2e and the polyimide sheet 4f even after the pressurizing step performed after the sheet stretching step.

  Thereafter, in the electrical inspection process (pressing process) shown in FIG. 1, the contactor 3 and the pad 11 are brought into contact with each other as shown in FIG. A load (contact load) is further applied through the pressing portion 4. The magnitude of the contact load is the largest on the protruding portion 2d, similar to the pressing force, and the contact load applied to the region 2e on the contactor 3 sandwiched between the protruding portions 2d is larger than that on the protruding portion 2d. Get smaller. That is, the load applied to the thin film sheet 2 is mainly received by the protruding portion 2d from the pressing portion 4 and transmitted to the contactor 3 via the protruding portion 2d. In other words, the load applied to the thin film sheet 2 is not transmitted from the region 2e on the contactor 3 to the contactor 3 in the direction orthogonal to the back surface 2b, but from the protruding portion 2d arranged next to the region 2e. Is transmitted to the contactor 3 in an oblique direction. For this reason, even if it is a case where the area | region 2e on the contactor 3 protrudes compared with the circumference | surroundings, the dispersion | variation in the load transmitted to the contactor 3 can be reduced. In this way, by disposing the protruding portion 2d away from the contactor 3 in plan view, variation in the load transmitted to the contactor 3 can be reduced, and the contact pressure of each contactor 3 can be made uniform. .

Moreover, as shown in FIG. 12, the protrusion part 2d is arrange | positioned so that it may extend along the extension direction (arrangement direction) of the contactor group 3A in which the several contactor 3a is arrange | positioned. For this reason, the entire upper surface (back surface 2 b) of the protruding portion 2 d formed continuously over the plurality of wirings 23 is in close contact with the polyimide sheet 4 f that is a pressing tool of the pressing portion 4. That is, the entire protrusion 2d extending along the extending direction (arrangement direction) of the contactor group 3A (see FIG. 12) receives the load transmitted from the pressing portion 4. For this reason, the load transmitted to the protrusion 2d is distributed and transmitted to the plurality of contactors 3 sandwiched between the two protrusions 2d. As a result, it is possible to reduce variations in the contact pressures of the plurality of contactors 3 sandwiched between the two protrusions 2d. For example, FIG. 12 is an enlarged plan view of a region (a densely arranged region) in which a plurality of contactors 3 are arranged at substantially equal intervals, but as shown in FIG. 17, adjacent contactors 3 are more than the first interval P1. An area (a scattered arrangement area) arranged at a wide second interval P2 is provided. In FIG. 17, the wiring layers 24a and 24b are not shown in order to facilitate understanding of the positional relationship between the contactor 3a and the band member 27. According to the present embodiment, even when the contactors 3 are arranged in the scattered arrangement region as shown in FIG. 17, a plurality (range shown in FIG. 17) sandwiched between the two protruding portions 2d. In this case, the load is transmitted to 10 contactors 3 in a distributed manner, so that the contact pressure of each contactor 3 can be made uniform. That is, the contact pressure of the contactors 3 arranged in the scattered arrangement region and the contact pressure of the contactors 3 arranged in another region (for example, a dense region) can be made uniform. As a result, it is possible to prevent or suppress defects in the electrical inspection process caused by variations in the contact pressures of the plurality of contactors 3. For example, since the load is distributed to the plurality of contactors 3 and the load is transmitted, the transmission load to some of the contactors 3 becomes extremely low, and it is possible to prevent or suppress the occurrence of a conduction failure (open failure). Further, for example, since the load is distributed to the plurality of contactors 3 to transmit the load, the transmission load to some of the contactors 3 becomes extremely high, and the pads 11, the insulating film 13b, and the semiconductor integrated circuit are prevented from being destroyed. Can be suppressed. For example, when the electrical inspection of the wafer WH using the aforementioned low-k insulating film as the insulating film 13b is performed, the contact pressure of each contactor 3 needs to be set low. For example, the load at the time of contact transmitted to each contactor 3 is about 5 × 10 ⁻³ N. According to the present embodiment, even when electrical inspection is performed with a low load in this way, the margin of variation in contact pressure can be reduced, thereby preventing conduction failure and destruction of the wafer WH. Can do.

<Preferred embodiment of projecting portion peripheral structure>
Next, a preferable aspect around the protrusion 2d shown in FIGS. 18 is an enlarged sectional view showing a first modification of the thin film sheet shown in FIG. 11, and FIG. 19 is an enlarged sectional view showing a second modification of the thin film sheet shown in FIG. 20 to 22 are enlarged plan views showing the back side of the F part, the G part, and the H part of the thin film sheet shown in FIG. 9, respectively. FIG. 23 is an enlarged plan view schematically showing the relative positional relationship between the entire structure of the belt member shown in FIGS. 12 and 20 to 22 and the contactor group. 24 and 25 are enlarged plan views schematically showing modifications to FIG. 20 to 25, the wiring layers 24a and 24b are not shown in order to facilitate understanding of the positional relationship between the contactor 3 and the belt member 27. 23 to 25, the contactor 3 is not shown in order to facilitate understanding of the positional relationship between the contactor groups 3A, 3B, 3C, and 3D and the band member 27.

  First, in the present embodiment, as shown in FIG. 12, in the plan view, the protruding portions 2d are arranged on both sides of the contactor group 3A so as to extend along the contactor group 3A. As a modification of FIG. 12, it is also possible to adopt a mode in which the protruding portion 2d is arranged on either one of the adjacent sides of the contactor group 3A (not shown). In this case, since the protruding portion 2d is arranged at a position higher than the region 2e on the contactor 3, the flow amount of the elastomer 4c (see FIG. 15) on the region 2e is set to be larger than that of the thin film sheet 50 shown in FIG. , Can be reduced. Further, by extending the protruding portion 2d along the extending direction (arrangement direction) of the contactor group 3A, the load transmitted to the protruding portion 2d is applied to the plurality of contactors 3 arranged next to the protruding portion 2d. Can be dispersed. Therefore, the variation in the contact pressure of each contactor 3 can be reduced as compared with the comparative example shown in FIGS. 30 and 31. However, from the viewpoint of more reliably interposing the protruding portion 2d in the load transmission path from the pressing portion 4 (see FIG. 15) to the contactor 3, as shown in FIG. 12, the protruding portions are adjacent to both sides of the contactor group 3A. It is preferable to arrange 2d. In particular, when the contactors 3 are arranged in a plurality of rows in one contactor group 3A as shown in FIG. 12, there is a concern that the contact pressure may vary in the contactors 3 in a row away from the protruding portion 2d. It is particularly preferable to arrange the protrusions 2d on both sides of 3A.

  In addition, the protrusion 2d is harder than the elastomer 4c and the polyimide sheet 4f from the viewpoint of more reliably interposing the protrusion 2d in the load transmission path from the pressing portion 4 (see FIG. 15) to the contactor 3. Preferably). Further, from the viewpoint of improving the dispersibility of the load received by the protrusion 2d to the plurality of contactors 3, the protrusion 2d preferably has higher rigidity than the polyimide films 25 and 26 (see FIG. 11). In order to satisfy such a condition, in the present embodiment, as shown in FIG. 11, a band member 27 made of a metal film is formed between the polyimide film 26 and the polyimide film 25, and the protruding portion follows the band member 27. 2d is formed. The band member 27 is made of the same material as the wiring 23. That is, the band member 27 is a laminated film in which the metal film 27a and the metal film 27b are sequentially laminated from the lower layer. The metal film 27a is a base metal film for forming the band member 27. For example, a chromium film with a film thickness of about 0.1 μm and a copper film with a film thickness of about 1 μm are sequentially deposited by sputtering or vapor deposition. Can be formed. Further, the metal film 27b is a main metal film for securing a film thickness necessary for the band member 27. For example, a copper film or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer is exemplified. Can do. As described above, the band member 27 made of the metal films 27a and 27b is harder than the elastomer 4c and the polyimide sheet 4f (is hardly deformable), and therefore, a load transmission path from the pressing portion 4 (see FIG. 15) to the contactor 3. In addition, the protruding portion 2d can be more reliably interposed. Further, since the band member 27 is made of the metal films 27a and 27b having higher rigidity than the polyimide films 25 and 26, the dispersibility of the load received by the projecting portion 2d to the plurality of contactors 3 can be improved. In the present embodiment, since the band member 27 is not electrically connected to the wiring 23 or the contactor 3, the band member 27 is not required to have conductivity. Therefore, the band member 27 can be made of, for example, a resin material as long as it is a material harder than the elastomer 4c and the polyimide sheet 4f, or a material higher in rigidity than the polyimide films 25 and 26. Moreover, when the band member 27 is made of a material having higher rigidity than the polyimide films 25 and 26, wrinkles are generated in the thin film sheet 2 when the thin film sheet 2 is pressed by the pressing portion 4 (see FIG. 6). Can be suppressed.

  11 to 15, the band member 27 is covered with the polyimide film 26, but as a modification, the band member 27 is exposed on the back surface 2 b side of the thin film sheet 2 as in the thin film sheet 31 shown in FIG. 18. The structure can also be made. In other words, the polyimide film 26 shown in FIG. 11 is not formed, and the upper surface of the polyimide film 25 disposed in the uppermost layer can be the back surface 2 b of the thin film sheet 2. In this case, the band member 27 formed on the polyimide film 25 becomes the protruding portion 2d. However, from the viewpoint of protecting the band member 27 and the polyimide sheet 4f (see FIG. 15), it is preferable to cover the band member 27 with a polyimide film 26 as a protective film, as shown in FIG. For example, oxidation of the band member 27 and peeling from the polyimide film 25 can be prevented or suppressed. Further, for example, damage to the polyimide sheet 4f (see FIG. 15) due to direct rubbing with the band member 27 can be prevented.

  Moreover, in FIGS. 11-15, the example which the area | region 2e on the contactor 3 of the back surface 2b of the thin film sheet 2 became higher than the surrounding area | region was shown. However, as a modified example, a structure in which the protruding portion 2d is formed on the flattened back surface 2b as in the thin film sheet 32 shown in FIG. According to the thin film sheet 32 shown in FIG. 19, the load received by the protrusion 2d is distributed and transmitted to the plurality of contactors 3 by forming the protrusion 2d in the same manner as the thin film sheet 2 shown in FIGS. Therefore, the variation in contact pressure of each contactor 3 can be reduced. However, in the comparative example shown in FIG. 30 and the comparative example shown in FIG. 31, the margin of variation in contact pressure is larger in the comparative example shown in FIG. For this reason, as shown in FIGS. 11 to 15, when the protrusion 2d is formed on the thin film sheet 2 in which the region 2e on the contactor 3 of the back surface 2b is higher than the surrounding region, the variation in contact pressure is particularly reduced. Great effect.

  Moreover, in order to receive a load by the protrusion part 2d, the thickness from which the height of the protrusion part 2d becomes the highest position in the back surface 2b of the contactor arrangement | positioning area | region 2c (refer FIG. 9) is preferable. For this reason, the thickness of the band member 27 is preferably equal to or greater than the thickness of the wiring 23. Particularly preferably, the band member 27 is formed thicker than the wiring 23 as shown in FIG.

  As shown in FIG. 12, when the band member 27 is arranged on both sides of the contactor group 3A, it is preferable that the distance between the band member 27 and the contactor group 3A is equal in plan view. For example, in FIG. 12, of the two band members, the distance L1 from the band member 27 arranged next to one of the contactor groups 3A to the contactor group 3A is the band arranged next to the other of the contactor groups 3A. It is equal to the distance L2 from the member 27 to the contactor group 3A. Further, as shown in FIG. 17, the distance L1 and the distance L2 are constant in the extending direction (arrangement direction) of one contactor group 3A. Thereby, since the distance of the some contactor 3 and the protrusion part 2d can be kept substantially constant, the load which the protrusion part 2d received can be disperse | distributed to a some contactor with sufficient balance. Further, specific values of the particularly preferable distance L1 and distance L2 vary depending on the size (planar dimension) of the contactor 3, but in the present embodiment, the distances L1 and L2 are the widths of one contactor 3. However, it is 0.5 times or more and 2 times or less. For example, the width of the contactor 3 (the length in the direction orthogonal to the extending direction (arrangement direction) of the contactor group 3A in plan view) is about 50 μm, whereas the distances L1 and L2 are about 25 μm to 100 μm. It is an arbitrary value. When the values of the distances L1 and L2 become extremely large, the region 2e on the contactor 3 on the back surface 2b is likely to receive a load from the pressing portion 4 (see FIG. 15), and a load component that does not pass through the protruding portion 2d is generated. On the other hand, when the values of the distances L1 and L2 are extremely small, dispersion of dispersibility tends to occur when the load received by the protrusion 2d is distributed to the plurality of contactors 3. For this reason, it is particularly preferable that the distances L1 and L2 be 0.5 times or more and 2 times or less with respect to the width of one contactor 3.

  Further, as shown in FIG. 12, when the band members 27 are arranged on both sides of the contactor group 3A, it is preferable to align the band widths of the band members 27 in a plan view. For example, in FIG. 12, of the two band members 27, the band width W1 of the band member 27 arranged next to one of the contactor groups 3A and the band member 27 arranged next to the other of the contactor groups 3A. The band width W2 is equal. Further, as shown in FIG. 17, the band width W1 and the band width W2 are constant in the extending direction (arrangement direction) of one contactor group 3A. Thereby, the load amount received by each protrusion part 2d can be made comparable. Further, in order to make the load transmitted from the pressing portion 4 (see FIG. 15) to the plurality of contactors 3 via the projecting portions 2d become the main loads that determine the contact pressure, the band widths W1 and W2 are: It is preferable to make it wide. In the present embodiment, the band widths W1 and W2 are wider than the wiring width of the wiring 23 (see FIG. 10) disposed in the lower layer, and are set to be approximately the same as the width of one contactor 3. For example, the wiring width of the wiring 23 shown in FIG. 10 (the wiring width of the region extending on the contactor 3) is about 20 to 25 μm, whereas the band widths W1 and W2 are about 40 to 60 μm. That is, the band widths W1 and W2 are approximately the same as the width of the contactor 3 (the length in the direction orthogonal to the extending direction (arrangement direction) of the contactor group 3A in plan view). Thus, by forming the band widths W1 and W2 wide, it is possible to reduce the influence of the load transmitted to the plurality of contactors 3 without passing through the protrusion 2d. If the band widths W1 and W2 are set to be equal to or larger than the width of one contactor 3, the influence of the load transmitted to the plurality of contactors 3 without the projecting portions 2d can be reduced. The upper limits of the widths W1 and W2 are not particularly limited. Therefore, for example, when the thin film sheet 2 is pressed by the pressing portion 4 (see FIG. 6), the contactor arrangement region 2c (see FIG. 9) is expanded without slack, or the thin film sheet 2 or the probe card PRC (see FIG. 6). Can be appropriately selected from the viewpoint of handling in the process of assembling.

  Further, as shown in FIGS. 12 and 17, in the contactor group 3A, a plurality of contactors 3a are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group 3A. This is to correspond to the arrangement pattern of the pads 11 (see FIG. 4) in the chip area 10a (see FIG. 2) to be inspected. As described above, when the contactors 3 are arranged in a plurality of rows in one contactor group 3A, as a modification of FIGS. 10 to 17, the contactor 3 in the first row and the contactor 3 in the second row are further provided. It is also conceivable to arrange the band member 27 (projecting portion 2d). That is, it is also possible to adopt a structure in which three or more belt members 27 (projecting portions 2d) are arranged along the extending direction (arrangement direction) of the contactor group 3A. However, as shown in FIG. 12, when the distance between the contactor 3 in the first row and the contactor 3 in the second row is short, the belt member 27 is placed between the contactors 3 in each row. There is a possibility that the distance between the belt member 27 and the contactor 3 becomes short, and the variation in contact pressure between the contactors 3 cannot be sufficiently reduced. Further, from the viewpoint of reducing the planar area of the semiconductor chip 10 (see FIG. 4), when the pads 11 (see FIG. 4) are arranged in a plurality of rows, the first row of pads 11 and the second row. It is preferable to arrange the pads 11 close to each other. Therefore, as shown in FIGS. 12 and 17, even when the plurality of contactors 3a are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group 3A, a plurality of rows More preferably, the band member 27 is not arranged between the contactors 3 arranged in the above. Even in this case, if the distance between the contactor 3 in the first row and the contactor 3 in the second row is short (in FIG. 12, about 58 μm), the distance between the two belt members 27 arranged on both sides of the contactor group 3A. Since the load can be distributed and transmitted to the contactors 3 in each row arranged in the row, variation in contact pressure can be reduced. Of course, when the distance between the contactor 3 in the first row and the contactor 3 in the second row is long (for example, more than twice the width of one contactor 3), the contactor 3 in the first row and the second contactor 3 A band member 27 (projection 2d) can be further disposed between the contactors 3 in the row.

  Moreover, the thin film sheet 2 shown in FIG. 9 includes contactor groups 3B other than the contactor group 3A shown in FIGS. 12 and 17 among the plurality of contactor groups arranged along the sides of the contactor arrangement region 2c forming a quadrangle. A plurality of contactors 3 are also arranged in 3C and 3D, respectively. As shown in FIG. 20, in the contactor group B arranged along the side intersecting (orthogonal) with the contactor group 3A (see FIG. 9), a plurality of contactors 3b are arranged in the extending direction (arrangement direction) of the contactor group 3B. ) Along a plurality of rows (two rows). In addition, as shown in FIG. 21, in the contactor group C arranged along the side facing the contactor group 3A (see FIG. 9), a plurality of contactors 3c include the extending direction (arrangement direction) of the contactor group 3C. Are arranged in a plurality of rows (two rows). In addition, as shown in FIG. 22, in the contactor group D arranged along the side facing the contactor group 3B (see FIG. 9), a plurality of contactors 3d are arranged in the extending direction (arrangement direction) of the contactor group 3D. Are arranged in a plurality of rows (two rows). Then, on both sides of the contactor groups 3B, 3C, and 3D, similarly to both sides of the contactor group 3A, the band members 27 and the protruding portions 2d that follow the band members 27 are arranged, respectively. As described above, when the contactor groups 3A, 3B, 3C, and 3D are arranged along the respective sides of the contactor arrangement region 2c (see FIG. 9), the contactor groups 3A, 3B, 3C, and 3D are respectively adjacent to each other. It is preferable that the distances L3, L4, L5, and L6 between the belt members 27 to be arranged are equal. By making the distances L3, L4, L5, and L6 between the band members 27 equal, the distances L1 and L2 can be made uniform in each of the contactor groups 3A, 3B, 3C, and 3D. As a result, it is possible to reduce variations in contact pressure between the contactors 3a, 3b, 3c, and 3d arranged in the contactor groups 3A, 3B, 3C, and 3D.

  As shown in FIG. 23, as the entire structure of the band member 27 and the projecting portion 2d, the four band members 27 arranged inside the contactor groups 3A, 3B, 3C, and 3D are connected and integrated to form the contactor group 3A. In some cases, the four belt members 27 arranged outside 3B, 3C, and 3D are connected and integrated. In FIG. 23, the contactor groups 3A, 3B, 3C, and 3D form a quadrilateral in plan view. Each of the band members 27 arranged along each of the contactor groups 3A, 3B, 3C, and 3D is arranged on the inner annular body 28a arranged inside the quadrilateral and outside the quadrilateral in plan view. This constitutes a part of the outer annular body 28b. In such a case, since the loads received by the projecting portions 2d arranged along the contactor groups 3A, 3B, 3C, and 3D affect each other, in particular, the distances L3 and L4 between the belt members 27 are affected. , L5 and L6 are preferably equal.

  Further, as shown in FIG. 23, when the outer annular body 28b is continuously formed without being divided in the middle, it is connected at the corners where the extension lines of the respective sides of the outer annular body 28b intersect. They are connected via an oblique arrangement portion 28c arranged obliquely with respect to each side so that the sides are not orthogonal. A corner portion where the two sides of the outer annular body 28b are connected serves as an inflection point at which the extending direction of the band member 27 changes. For this reason, the mutual arrangement | positioning of each strip | belt member 27 is eased by providing the diagonal arrangement | positioning part 28c. However, when the distances L1 and L2 (for example, see FIG. 12) between the band member 27 and the contactor groups 3A, 3B, 3C, and 3D are changed by providing the diagonally arranged portion 28c, the diagonally arranged portion 28c is provided. Preferably not. For example, contactor groups 3A, 3B, 3C, and 3D are arranged in the vicinity of the corners where the sides of the inner annular body 28a shown in FIG. 23 meet. For this reason, the diagonal arrangement | positioning part is not provided in the corner | angular part where each edge | side of the inner side annular body 28a crosses. As a result, the distance L2 between the belt member 27 and the contactor groups 3A, 3B, 3C, and 3D in each of the extending directions of the belt members 27 constituting the inner annular body 28a (see FIGS. 12, 20 to 22). Can be aligned.

  Further, as a modification of the overall structure of the belt member 27 and the protruding portion 2d shown in FIG. 23, the belt member 27 is divided at each corner of the inner annular body 28a and the outer annular body 28b as shown in FIG. (Not connected) structure. In this case, since each band member 27 is an independent member, the contact pressure of each contactor 3 (see FIG. 9) can be controlled in units of contactor groups 3A, 3B, 3C, and 3D. In addition, by not forming the band member 27 at the corner that becomes the inflection point, it is possible to reduce the mutual influence of the band members 27 arranged along each of the contactor groups 3A, 3B, 3C, and 3D. . As described above, when the belt member 27 is divided, it is the same as that disposed at the end of the plurality of contactors 3a, 3b, 3c, and 3d disposed in the contactor groups 3A, 3B, 3C, and 3D. It is preferable to extend to the position or further to the corner side. Thereby, since the load of the several contactor 3a, 3b, 3c, 3d arrange | positioned at each contactor group 3A, 3B, 3C, 3D can each be disperse | distributed, the dispersion | variation in contact pressure can be reduced.

  In addition, as a modification of the aspect in which each of the inner annular body 28a and the outer annular body 28b shown in FIG. 24 is divided, a structure in which one of the inner annular body 28a and the outer annular body 28b is divided may be employed. For example, in FIG. 25, each contactor group 3A, 3B, 3C, 3D is long and extends to the vicinity of the corner of the inner annular body 28a. For this reason, in FIG. 25, it is set as the structure which part | segments the strip | belt member 27 in each corner | angular part of the outer side annular body 28b (it does not connect). On the other hand, the inner annular body 28a is continuously formed without being divided in the middle in order to extend to the end portions of the contactor groups 3A, 3B, 3C, and 3D.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

<Modification>
For example, in the thin film sheet 2, the embodiment in which a plurality of contactors 3 are applied to a structure in which the contactors 3 are arranged in a plurality of rows (two rows) along the extending direction (arrangement direction) of the contactor group has been described. However, the number of contactors 3 in the contactor group and the arrangement of the contactor group are not limited to this. For example, the present invention can be applied to a structure in which a plurality of contactors 3a are arranged in a row in the contactor group 3A as in a thin film sheet 33 shown in FIG. FIG. 26 is an enlarged plan view showing a modification to FIG. When the contactors 3a are arranged in a single row as in the thin film sheet 33, the contact pressure variation of the contactors 3a can be reduced with higher accuracy than in the case where the contactors 3a are arranged in a plurality of rows as in the thin film sheet 2. In FIG. 26, the wiring layers 24a and 24b are not shown in order to facilitate the understanding of the positional relationship between the contactor 3 and the belt member 27.

  Although not shown, for example, contactor groups 3B, 3C, and 3D in which a plurality of contactors 3 are arranged in a plurality of rows as shown in FIGS. 20 to 22, and a plurality of contactors 3a in a row as shown in FIG. It is also possible to apply to a structure in which the contactor group 3A arranged in (1) is mixed. In this case, since it is preferable to control the contact pressure for each contactor group 3A, 3B, 3C, 3D independently, as shown in FIG. 24, at each corner of the inner annular body 28a and the outer annular body 28b, The member 27 is preferably divided (not connected). In addition, by setting the distances L1 and L2 shown in FIG. 26 and the distances L1 and L2 shown in FIGS. 20 to 22 to different values, the contactor group 3A arranged in a single row and the contactor group 3B arranged in a plurality of rows. The contact pressure can be made uniform between 3C and 3D.

  Further, the semiconductor chip 10 shown in FIG. 4 has a plurality of pads 11 arranged along each of the four sides. For example, when the pads 11 are arranged along only one side or two sides of the four sides. There is also. The number of contactor groups is one or two corresponding to the arrangement of the pads 11. In this case, the protruding portion 2d and the band member 27 may be formed only on the side where the contactor group is disposed.

  Further, in FIG. 7, the contactor arrangement area 2c corresponding to one chip area 10a (see FIG. 2) is arranged on one thin film sheet 2, and electrical inspection is sequentially performed on each chip area 10a. Although the embodiment has been shown, it is also possible to perform an electrical inspection on the plurality of chip regions 10a at once. 27 to 29 are enlarged plan views showing modifications of the thin film sheet used when the electrical inspection process shown in FIG. 1 is performed on a plurality of chip regions at once with respect to FIG. 27 to 29, the wiring layers 24a and 24b and the contactor 3 are not shown in order to facilitate understanding of the positional relationship between the contactor groups 3A, 3B, 3C, and 3D and the band member 27.

  Each of the thin film sheet 34 shown in FIG. 27 and the thin film sheet 35 shown in FIG. 28 has a plurality of contactor arrangement regions 2c (two in FIG. 27 and four in FIG. 28). In each contactor arrangement region 2c, contactor groups 3A, 3B, 3C, and 3D are arranged, respectively. In addition, band members 27 are disposed on both sides of the contactor groups 3A, 3B, 3C, and 3D. With such a configuration, the contact pressure variation of each contactor 3 (see FIG. 9) can be reduced in the electrical inspection process in which the plurality of chip regions 10a (see FIG. 2) are collectively inspected. Can be reduced. Further, the layout in which three or more contactor arrangement regions 2c are arranged is not limited to a mode of arranging in a matrix as shown in FIG. 28. For example, three or more contactor arrangement regions 2c may be arranged in a line. it can.

  By the way, as shown in FIGS. 27 and 28, when a plurality of contactor arrangement regions 2c are arranged side by side, the intervals between the contactor arrangement regions 2c are the intervals between adjacent chip regions 10a shown in FIG. It varies according to (width). Depending on the width of the scribe region 10b, the band member 27 may not be disposed in the adjacent contactor disposition region 2c as shown in FIGS. Therefore, in the thin film sheet 36 of FIG. 29 shown as a modification of FIG. 27, one band member 27 that is also used in the adjacent contactor arrangement region 2c is arranged. That is, the band members 27 arranged to face each other are integrated in the outer annular bodies 28b included in the two contactor arrangement regions 2c shown in FIG. In this case, the integrated band member 27 and the band member 27 which is a part of the inner annular body 28a opposed to the integrated band member 27 may have different band widths. However, even in this case, the variation in the contact pressure of the contactor 3 can be reduced as compared with the case where the band member 27 (projecting portion 2d) is not formed.

  Further, it goes without saying that the modifications described in the above embodiments can be applied in appropriate combination within a range not departing from the gist. For example, FIG. 27 to FIG. 29 exemplarily show a modification of FIG. 23, but this can also be applied as a modification of FIG. 24 or FIG.

  INDUSTRIAL APPLICABILITY The present invention is applicable to a semiconductor integrated circuit device that performs electrical inspection by pressing a contact terminal of a probe card against an electrode, and a probe card that is used for electrical inspection.

DESCRIPTION OF SYMBOLS 1 Wiring board 1a Lower surface 1b Upper surface 1c Wiring 1d Pogo seat 1e Opening part 2 Thin film sheet 2a Main surface (contact terminal formation surface)
2b Back surface 2c Contactor arrangement area (contact terminal arrangement area)
2d protrusion 2e, 2f region 3, 3a, 3b, 3c, 3d contactor (contact terminal)
3A, 3B, 3C, 3D contactor group (contact terminal group)
4 Pressing part 4a Plunger 4b Pushing piece 4c Elastomer 4d Spring 4e Pushing pin 4f Polyimide sheet 5 Pressurizing part 5a Connection jig 5b Spring 6 Connection jig 7 Overhang ring 8 Adhesion ring 10 Semiconductor chip (semiconductor integrated circuit device)
10a Chip area 10b Scribe area 11 Pad 12 Semiconductor substrate 12a Main surface 13 Wiring layer 13a Wiring 13b Insulating film 14 Protective film 14a Opening 21 Metal film 21a Rhodium film 21b Nickel film 22 Polyimide film 23 Wiring 23a, 23b Conductive film 23D Dummy wiring 24, 24a, 24b Wiring layers 25, 26 Polyimide film (insulating film)
27 Band members 27a, 27b Metal film 28a Inner annular body 28b Outer annular body 28c Slanting arrangement part 30 Arrow 31, 32, 33, 34, 35, 36, 50, 51 Thin film sheet 40 Substrate 40a Opening part 41 Conductive film 42, 43 Thin film 50b Back surface 50c Region 51b Back surface 52 Polyimide film CHD Card holder IFR Interface ring PGP Pogo pin PR Prober PRC Probe card T Tester TH1, TH2 Through hole THD Tester head WCH Wafer chuck WH Wafer WST Wafer stages L1, L2, L3, L4, L5 , L6 Distance P1, P2 Distance W1, W2 Band width

Claims (20)

(A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the region where the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
The method of manufacturing a semiconductor integrated circuit device, wherein the protruding portion is disposed apart from the first contact terminal group in a plan view. (A) A semiconductor that is partitioned into a plurality of chip regions, each of which has a semiconductor integrated circuit formed thereon, and a plurality of chip electrodes that are electrically connected to the semiconductor integrated circuit on the main surface. Preparing a wafer;
(B) A wiring board on which a plurality of first wirings are formed, a plurality of contact terminals for contacting the plurality of chip electrodes, a contact terminal forming surface on which the plurality of contact terminals are formed, and the contact terminal formation A first sheet having a back surface located on the opposite side of the surface, and held on the wiring substrate such that tips of the plurality of contact terminals are opposed to a main surface side of the semiconductor wafer; Preparing a first card having a pressing portion that presses the region where the plurality of contact terminals are formed from the back surface through a buffer layer;
(C) conducting the electrical inspection of the semiconductor integrated circuit by bringing tips of the plurality of contact terminals of the first sheet into contact with the plurality of chip electrodes of the semiconductor wafer;
Including
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the projecting portion is disposed adjacent to the first contact terminal group so as to extend along the first contact terminal group in a plan view. In claim 2,
A plurality of the protrusions are formed on the back surface,
The plurality of protrusions are arranged on both sides of the first contact terminal group so as to extend along the first contact terminal group in a plan view. Method. In claim 3,
A third insulating film is formed between the second insulating film and the plurality of second wirings to cover the first insulating film and the plurality of second wirings,
Between the second insulating film and the third insulating film, a plurality of band members made of a material having higher rigidity than the second insulating film are formed,
The plurality of band members include a plurality of first band members arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in a plan view. ,
The method of manufacturing a semiconductor integrated circuit device, wherein the plurality of protrusions are formed following the plurality of band members. In claim 4,
The plurality of second wirings and the plurality of contact terminals are respectively connected through a plurality of through holes formed on the plurality of contact terminals of the first insulating film,
Of the back surface, a plurality of first regions positioned on the plurality of contact terminals are lower than a height of the protruding portion, and a second height between the plurality of first regions and the protruding portion. A method for manufacturing a semiconductor integrated circuit device, characterized in that the height is higher than a region height. In claim 3,
In plan view, the distance from the first band member arranged next to one of the first contact terminal groups to the first contact terminal group among the plurality of first band members is the first contact terminal group. A method of manufacturing a semiconductor integrated circuit device, wherein the distance is equal to a distance from a first band member arranged next to the first contact terminal group to the first contact terminal group. In claim 5,
In plan view, among the plurality of first band members, the band width of the first band member disposed next to one of the first contact terminal groups and the other adjacent to the first contact terminal group A method of manufacturing a semiconductor integrated circuit device, wherein the band widths of the first band members are equal. In claim 5,
In the first contact terminal group, the plurality of first contact terminals are arranged in one or a plurality of rows along the first direction,
In the case of the plurality of rows, the plurality of band members are not formed between the plurality of first contact terminals arranged in the plurality of rows in a plan view. . In claim 4,
The plurality of chip regions each form a quadrangle in plan view, and a plurality of first chip electrode groups in which a plurality of first chip electrodes are arranged along each of four sides constituting the outer edge of each chip mounting region. A second chip electrode group in which the second chip electrodes are disposed, a third chip electrode group in which the plurality of third chip electrodes are disposed, and a fourth chip electrode group in which the plurality of fourth chip electrodes are disposed. ,
On the contact terminal forming surface of the first sheet, in the step (c), the first contact terminal group in which the plurality of first contact terminals arranged to face the plurality of first chip electrodes are formed, A second contact terminal group in which the plurality of second contact terminals arranged opposite to the plurality of second chip electrodes is formed, and a plurality of third contact terminals arranged opposite to the plurality of third chip electrodes are formed. A third contact terminal group formed, and a fourth contact terminal group in which the plurality of fourth contact terminals arranged to face the plurality of fourth chip electrodes are disposed,
The plurality of band members include, in plan view, the plurality of first band members extending in a band shape along the first contact terminal group on both sides of the first contact terminal group, and the second contact terminal group. A plurality of second belt members extending in a band shape along the second contact terminal group on both sides, and a plurality of third members extending in a band shape along the third contact terminal group on both sides of the third contact terminal group. A belt member, and a plurality of fourth belt members extending in a belt shape along the fourth contact terminal group are included on both sides of the fourth contact terminal group,
The plurality of protrusions are formed in accordance with each of the plurality of first, second, third, and fourth belt members,
The distance between the plurality of first belt members, the distance between the plurality of second belt members, the distance between the plurality of third belt members, and the distance between the plurality of fourth belt members are equal. A method for manufacturing a semiconductor integrated circuit device. In claim 9,
The first, second, third and fourth contact terminal groups constitute a quadrilateral in plan view,
Each of the plurality of first, second, third, and fourth belt members has a first annular body that is disposed inside the quadrilateral and a second that is disposed outside the quadrilateral in plan view. A method of manufacturing a semiconductor integrated circuit device, comprising a part of an annular body. In claim 10,
The method of manufacturing a semiconductor integrated circuit device, wherein the first annular body is continuously formed without being divided in the middle. In claim 11,
The method of manufacturing a semiconductor integrated circuit device, wherein the second annular body is continuously formed without being divided in the middle. In claim 12,
The second annular body has four sides along each side of the quadrilateral formed by the first, second, third and fourth contact terminal groups,
In the corner part where the extension line of each side of the second annular body intersects, the two connected sides are connected via an oblique arrangement part arranged obliquely with respect to each side so as not to be orthogonal to each other. A method for manufacturing a semiconductor integrated circuit device. In claim 3,
The method for manufacturing a semiconductor integrated circuit device, wherein the plurality of band members are made of a metal film. A wiring board on which a plurality of first wirings are formed;
A plurality of contact terminals for contacting a plurality of chip electrodes formed on the main surface of the semiconductor wafer, a contact terminal forming surface on which the plurality of contact terminals are formed, and an opposite side of the contact terminal forming surface A first sheet having a back surface, the tips of the plurality of contact terminals being held on the wiring board facing the main surface of the semiconductor wafer;
A pressing portion that presses the region where the plurality of contact terminals are formed in the first sheet from the back surface through a buffer layer;
Have
The first sheet is
A first insulating film having the contact terminal forming surface;
A plurality of second wirings formed between the first insulating film and the back surface and electrically connected to the plurality of first wirings and the plurality of contact terminals;
A second insulating film having the back surface and formed on the first insulating film and the plurality of second wirings;
A protrusion formed on the back surface;
Including
The plurality of contact terminals include a plurality of first contact terminals formed in a first contact terminal group arranged along a first direction in plan view,
Among the plurality of second wirings, the plurality of second wirings connected to the plurality of first contact terminals are arranged to extend along a direction intersecting the first direction in a plan view. ,
The probe card, wherein the protruding portion is arranged to extend along the first contact terminal group next to the first contact terminal group in a plan view. In claim 15,
A plurality of the protrusions are formed on the back surface,
The plurality of protrusions are arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in plan view. In claim 16,
A third insulating film is formed between the second insulating film and the plurality of second wirings to cover the first insulating film and the plurality of second wirings,
Between the second insulating film and the third insulating film, a plurality of band members made of a material having higher rigidity than the second insulating film are formed,
The plurality of band members include a plurality of first band members arranged so as to extend along the first contact terminal group on both sides of the first contact terminal group in a plan view. ,
The plurality of protrusions are formed to follow the plurality of band members. In claim 17,
The plurality of second wirings and the plurality of contact terminals are respectively connected through a plurality of through holes formed on the plurality of contact terminals of the first insulating film,
Of the back surface, a plurality of first regions positioned on the plurality of contact terminals are lower than a height of the protruding portion, and a second height between the plurality of first regions and the protruding portion. A probe card characterized by being higher than the height of the area. In claim 18,
In plan view, the distance from the first band member arranged next to one of the first contact terminal groups to the first contact terminal group among the plurality of first band members is the first contact terminal group. A probe card characterized by being equal to a distance from a first belt member arranged next to the other to the first contact terminal group. In claim 18,
The plurality of contact terminals are formed in a contact terminal arrangement region of the contact terminal forming surface of the first sheet,
The contact terminal arrangement area is a quadrangle in plan view, and the first contact terminal group in which a plurality of the first contact terminals are arranged along each of four sides constituting the outer edge of the contact terminal arrangement area. A second contact terminal group in which a plurality of second contact terminals are disposed, a third contact terminal group in which a plurality of third contact terminals are disposed, and a fourth contact terminal group in which a plurality of fourth contact terminals are disposed. Arranged,
The plurality of band members include, in plan view, the plurality of first band members extending in a band shape along the first contact terminal group on both sides of the first contact terminal group, and the second contact terminal group. A plurality of second belt members extending in a band shape along the second contact terminal group on both sides, and a plurality of third members extending in a band shape along the third contact terminal group on both sides of the third contact terminal group. A belt member, and a plurality of fourth belt members extending in a belt shape along the fourth contact terminal group are included on both sides of the fourth contact terminal group,
The plurality of protrusions are formed in accordance with each of the plurality of first, second, third, and fourth belt members,
The distance between the plurality of first belt members, the distance between the plurality of second belt members, the distance between the plurality of third belt members, and the distance between the plurality of fourth belt members are equal. Probe card.

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