CN115032430B - Probe structure and manufacturing method thereof - Google Patents
Probe structure and manufacturing method thereof Download PDFInfo
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- CN115032430B CN115032430B CN202210635765.7A CN202210635765A CN115032430B CN 115032430 B CN115032430 B CN 115032430B CN 202210635765 A CN202210635765 A CN 202210635765A CN 115032430 B CN115032430 B CN 115032430B
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- 238000005530 etching Methods 0.000 claims description 22
- 239000011888 foil Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 238000005476 soldering Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 abstract description 27
- 235000012431 wafers Nutrition 0.000 description 55
- 238000007689 inspection Methods 0.000 description 16
- 238000001514 detection method Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present disclosure provides a probe structure and a method of making the same. The probe structure comprises: the two insulating connecting parts are arranged at intervals; the plurality of conductive parts are arranged on the same side of the two insulating connecting parts, the plurality of conductive parts are arranged at intervals along a first direction, each conductive part of the plurality of conductive parts extends along a second direction, and the first direction and the second direction are crossed; the probes are arranged on one side, away from the two insulating connecting parts, of the conductive parts in a one-to-one correspondence manner, and are positioned between the two insulating connecting parts. Through the interval that sets up above-mentioned a plurality of electrically conductive portions rationally, can reduce the counterpoint degree of difficulty of probe and the bonding pad that is located on it, simultaneously through the horizontal distance between two above-mentioned insulating connecting portions and the probe of reasonable setting to the pressure of exerting on above-mentioned two insulating connecting portions is rationally controlled in the testing process, can realize the regulation to the syringe needle pressure, makes syringe needle pressure satisfy the demand that the wafer detected, and then has improved the efficiency and the degree of accuracy that the wafer detected.
Description
Technical Field
The disclosure relates to the technical field of wafer detection, in particular to a probe structure and a manufacturing method thereof.
Background
The wafer needs to be tested before being packaged into a complete chip to screen out bad wafers, thereby reducing the packaging cost. The tester is used for testing the electrical performance of the unpackaged wafer. The testing machine comprises a carrying platform and a probe card. The carrying platform is used for carrying the wafer. The probe card is an interface for the tester to connect to the wafer. The probe card is provided with a plurality of probes which are simultaneously in direct contact with a plurality of test PADs (PADs) on the wafer to transmit electric signals. The test instrument on the tester sends an electrical signal to the wafer through the probes on the probe card and receives the returned electrical signal, and further analyzes the returned electrical signal to determine the electrical properties of the wafer.
However, as the manufacturing process nodes of the semiconductor wafer continue to shrink, the designed dicing lines become narrower and the area of the test PAD corresponding to the test probe becomes smaller, which results in a large difficulty in alignment between the probe card and the wafer, and affects the efficiency and accuracy of wafer detection.
Disclosure of Invention
The main object of the present disclosure is to provide a probe structure and a method for manufacturing the same, wherein the probe structure can be adapted to a small-area test PAD, reduce alignment difficulty, and improve wafer detection efficiency and accuracy.
According to one aspect of the present disclosure, there is provided a probe structure comprising: the two insulating connecting parts are arranged at intervals; the plurality of conductive parts are arranged on the same side of the two insulating connecting parts, the plurality of conductive parts are arranged at intervals along a first direction, each conductive part of the plurality of conductive parts extends along a second direction, and the first direction and the second direction are crossed; the probes are arranged on one side, away from the two insulating connecting parts, of the conductive parts in a one-to-one correspondence manner, and are positioned between the two insulating connecting parts.
Optionally, adjacent conductive portions of the plurality of conductive portions are disposed at equal intervals.
Optionally, the width of each conductive portion in the first direction is the same.
Alternatively, each of the conductive portions has the same shape.
Optionally, the first direction is perpendicular to the second direction.
Optionally, each conductive portion includes a first conductive segment, a second conductive segment, and a third conductive segment connected in sequence, wherein one of the two insulating connection portions is connected to a first mounting surface of the first conductive segment, the other of the two insulating connection portions is connected to a second mounting surface of the third conductive segment, the first conductive segment has a first surface opposite to the first mounting surface, the third conductive segment has a second surface opposite to the second mounting surface, the first surface and the second surface are located in a first horizontal plane, the second conductive segment has a third mounting surface provided with a probe, and the third mounting surface is located in a second horizontal plane parallel to the first horizontal plane.
Optionally, the probe is disposed in a middle of the third mounting surface in the second direction.
Alternatively, the two insulating connection portions have the same shape.
Optionally, each conductive portion is a metal foil structure.
Optionally, the device further comprises a support frame connected with the insulation connecting part, and the conductive part is connected with the support frame through the insulation connecting part.
Optionally, the support frame is disposed around the outer periphery of the plurality of conductive portions.
According to another aspect of the present disclosure, there is provided a method for manufacturing the probe structure, including the steps of: forming a plurality of conductive parts, wherein the plurality of conductive parts are arranged at intervals along a first direction, each conductive part extends along a second direction, and the first direction and the second direction are crossed; two insulating connecting parts are arranged at intervals on the same side of the plurality of conductive parts; and a plurality of probes are arranged on one side of the conductive parts, which is far away from the two insulating connecting parts, in a one-to-one correspondence manner, and the probes are positioned between the two insulating connecting parts.
Optionally, forming the plurality of conductive portions includes: providing a metal foil; the metal foil is etched to form a plurality of conductive portions having an equidistant arrangement.
Optionally, forming the plurality of conductive portions further includes: the metal foil is etched to form a plurality of conductive portions while forming a support frame surrounding the plurality of conductive portions.
Alternatively, a soldering process is used to dispose a plurality of probes on a plurality of conductive portions in a one-to-one correspondence.
The probe structure that this embodiment of the disclosure provided includes two insulating connecting portions, a plurality of conductive portions and a plurality of probe, a plurality of conductive portions set up in two insulating connecting portions with one side and set up along first direction interval, and every conductive portion in a plurality of conductive portions extends along the second direction, first direction and second direction are alternately, the probe one-to-one sets up in conductive portion keep away from two insulating connecting portions one side, and a plurality of probe are located between two insulating connecting portions, thereby under the less and denser condition of bonding pad area on the wafer, through the interval that sets up above-mentioned a plurality of conductive portions rationally, can reduce the probe that is located on it with the counterpoint degree of difficulty of bonding pad, simultaneously because above-mentioned probe structure still includes above-mentioned two insulating connecting portions, thereby can constitute the arm of force between probe and the insulating connecting portion, through rationally setting up the horizontal distance between above-mentioned two insulating connecting portions and the probe, simultaneously at the in-process rational control is exerted the pressure on two insulating connecting portions, can realize the regulation to pressure, make the needle head satisfy the demand that the wafer detected, and then the wafer accuracy degree of accuracy has been improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure, illustrate and explain the exemplary embodiments of the disclosure and together with the description serve to explain the disclosure, and do not constitute an undue limitation on the disclosure. In the drawings:
FIG. 1 illustrates a schematic top view of a probe structure provided in accordance with an embodiment of the present disclosure;
FIG. 2 shows a schematic side view of the probe structure of FIG. 1
Fig. 3 is a schematic top view of a plurality of conductive parts formed in a method for manufacturing a probe structure according to an embodiment of the disclosure;
FIG. 4 is a schematic top view of the support frame and rear base body formed simultaneously with the formation of the plurality of conductive portions shown in FIG. 3;
FIG. 5 is a schematic top view of the rear base body with two insulated connectors spaced on the same side of the plurality of conductive portions shown in FIG. 4;
FIG. 6 is a schematic top view of the substrate after disposing a plurality of probes on one side of the plurality of conductive parts away from the two insulating connecting parts shown in FIG. 5;
Fig. 7 is a schematic diagram of a wafer test using the probe structure according to an embodiment of the disclosure.
Wherein the above figures include the following reference numerals:
10. An insulating connection portion; 101. a first mounting surface; 102. a second mounting surface; 103. a third mounting surface; 110. a first conductive segment; 120. a second conductive segment; 130. a third conductive segment; 20. a conductive portion; 30. a probe; 40. a support frame; 100. a base; 200. a wafer; 300. probe structure.
Detailed Description
It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
In order that those skilled in the art will better understand the present disclosure, a technical solution in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without inventive effort, based on the embodiments in this disclosure, shall fall within the scope of the present disclosure.
It should be noted that the terms "first," "second," and the like in the description and claims of the present disclosure and in the foregoing figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the disclosure herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
With the improvement of the integration level of semiconductor devices and the development of miniaturization thereof, the pitch of test pads is reduced, and probe cards are correspondingly smaller and miniaturized. The structure of the current probe card needs to be further optimized in order to be better suited for fine pitch of the wafer.
In one embodiment of the present disclosure, a probe structure is proposed, as shown in fig. 1 and 2, including two insulating connection parts 10, a plurality of conductive parts 20, and a plurality of probes 30, wherein: the two insulating connecting parts 10 extend along the first direction and are arranged at intervals along the second direction; a plurality of conductive parts 20 disposed at the same side of the two insulating connection parts 10, the plurality of conductive parts 20 being spaced apart along a first direction, and each conductive part 20 of the plurality of conductive parts 20 extending along a second direction, the first direction crossing the second direction; the plurality of probes 30 are disposed on one side of the plurality of conductive portions 20 away from the two insulating connecting portions 10 in a one-to-one correspondence manner, and the plurality of probes 30 are located between the two insulating connecting portions 10.
Under the condition that the area of the welding pad on the wafer is smaller and denser, the distance between the plurality of conductive parts 20 is reasonably arranged, the alignment difficulty of the probe 30 and the welding pad on the wafer can be reduced, meanwhile, the probe structure further comprises the two insulating connecting parts 10, so that a force arm can be formed between the probe 30 and the insulating connecting parts 10, the horizontal distance between the two insulating connecting parts 10 and the probe 30 is reasonably arranged, the pressure applied to the two insulating connecting parts is reasonably controlled in the testing process, the pressure of a needle head can be adjusted, the pressure of the needle head can meet the requirement of wafer detection, and the efficiency and the accuracy of wafer detection are further improved.
For example, since the arm of force can be formed between the probe and the insulating connecting portion, the horizontal distance between the two insulating connecting portions 10 and the probe 3 can be controlled by controlling the installation positions of the two insulating connecting portions 10 and the plurality of probes 30 on the plurality of conductive portions 20, and further, the arm of force on both sides of the probes 30 can be controlled.
For example, for the smaller-sized probes 30, in order to improve the accuracy of wafer inspection, the pressure of the probes 30 during the inspection process may be increased, and at this time, the moment arm formed by the probes 30 and the insulating connection portions 10 is increased by making the distance between the two insulating connection portions 10 and each probe 30 larger, so that the pressure of the probes 30 during the inspection process on the wafer to be inspected may be increased, and the pressure of the probe head may meet the requirement of wafer inspection.
In contrast, for the probes 30 with larger size, in order to avoid the influence of excessive pressure of the needle head of the probes 30 on the reliability of the wafer, the pressure of the probes 30 during the inspection process can be reduced, and at this time, the distance between the two insulating connecting portions 10 and each probe 30 is shortened to reduce the moment arm formed between the probes 30 and the insulating connecting portions 10, thereby reducing the acting force of the probes 30 during the inspection process, and enabling the pressure of the needle head to meet the requirement of the wafer inspection.
In an alternative embodiment, as shown in fig. 1 and 2, adjacent conductive portions 20 of the plurality of conductive portions 20 are disposed at equal intervals. Since the conductive parts 20 may be formed by an etching process, the design of a mask used in the etching process may be facilitated by arranging the conductive parts 20 at equal intervals; on the other hand, by arranging the conductive portions 20 at equal intervals, it is also possible to facilitate adjustment of the intervals of the adjacent conductive portions 20 by the etching process.
In the above-described alternative embodiment, as shown in fig. 1 and 2, the width of each conductive portion 20 in the first direction may also be made the same. By having the conductive portions 20 with the same width in the first direction, not only is the design of the reticle in the etching process simpler, but also the pitch adjustment of adjacent conductive portions 20 is facilitated.
In order to further reduce the design difficulty of the mask during the etching process, and at the same time facilitate the adjustment of the pitch between adjacent conductive portions 20, it is further optional that each conductive portion 20 has the same shape, as shown in fig. 1 and 2.
The plurality of conductive portions 20 are spaced apart along a first direction, and each conductive portion 20 of the plurality of conductive portions 20 extends along a second direction, in an alternative embodiment, as shown in fig. 1 and 2, the first direction a is perpendicular to the second direction B. By making the arrangement direction of the conductive portions 20 perpendicular to the extending direction, the reduction of the mask size in the etching process can be facilitated, and the adjustment of the pitch of the adjacent conductive portions 20 by the etching process is facilitated.
In an alternative embodiment, each probe 30 of the plurality of probes 30 extends in a direction perpendicular to the conductive portion 20, as shown in fig. 2. The arrangement mode can meet the requirement of the vertical probe card on the test needle.
In the above-described embodiment of the present disclosure, the probe structure may further include a support frame 40 connected to the insulation connection part 10, and the conductive part 20 is connected to the support frame 40 through the insulation connection part 10. The supporting frame 40 is used for fixing the plurality of conductive parts 20 through the insulating connection part 10.
In order to facilitate the fixing of all of the conductive parts 20 to the supporting frame 40 by the insulating connecting part 10, in an alternative embodiment, the supporting frame 40 is disposed around the outer circumference of the plurality of conductive parts 20, as shown in fig. 1.
In an alternative embodiment, as shown in fig. 2, each conductive part 20 includes a first conductive segment 110, a second conductive segment 120, and a third conductive segment 130 sequentially connected, wherein one of the two insulating connection parts 10 is connected to a first mounting surface 101 of the first conductive segment 110, the other of the two insulating connection parts 10 is connected to a second mounting surface 102 of the third conductive segment 130, the first conductive segment 110 has a first surface opposite to the first mounting surface 101, the third conductive segment 130 has a second surface opposite to the second mounting surface 102, the first surface and the second surface are located in a first horizontal plane, the second conductive segment 120 has a third mounting surface 103 where the probe 30 is disposed, and the third mounting surface 103 is located in a second horizontal plane parallel to the first horizontal plane.
In the above-described alternative embodiment, the third mounting surface 103 of the second conductive segment 120 can be provided to protrude from the first conductive segment 110 and the third conductive segment 130, thereby facilitating the mounting of the plurality of conductive parts 20 to the supporting frame 40 through the insulating connecting part 10, and simultaneously facilitating the fixing of the probes 30 to the third mounting surface 103 of the conductive parts 20 in a one-to-one correspondence through a soldering process or the like. In addition, since the second conductive segment 120 partially protrudes from the first conductive segment 110 and the third conductive segment 130, the conductive portion 20 has a certain deformability, and thus, the probe structure can adaptively adjust the needle pressure to a certain extent.
In an alternative embodiment, the probe 30 is disposed at the middle of the third mounting surface 103 in the second direction. Since the arm of force can be formed between the probe 30 and the insulating connecting portion 10, the arm of force can be adjusted easily by positioning the probe 30 in the middle of the third mounting surface 103.
Illustratively, in the case where it is necessary to increase the pressure of the tip of the probe 30, the moment arm formed by the probe 30 and the insulating connecting portions 10 is increased by increasing the distance between the two insulating connecting portions 10 and each probe 30, and since the probe 30 is located in the middle of the third mounting surface 103, by moving both insulating connecting portions 10 by the same distance in the second direction away from the probe 30, the moment arms on both sides of the probe 30 can be increased to have the same force.
In the case where it is necessary to reduce the pressure of the tip of the probe 30, the moment arm formed between the probe 30 and each of the probes 30 is reduced by shortening the distance between the two insulating connection parts 10 and each of the probes 30, and since the probe 30 is located in the middle of the third mounting surface 103, by moving both of the insulating connection parts 10 by the same distance in the second direction close to the probe 30, the moment arm located on both sides of the probe 30 can be reduced to have the same force.
In the above-mentioned probe structure of the present embodiment, the distance between the two insulating connecting portions 10 and each probe 30 can be adjusted according to the size of the needle head of the probe 30.
For example, in the case that the needles of the probes 30 have a larger size, the probes 30 may have a larger pressure when applied to the wafer to be inspected, and at this time, the moment arm formed by the probes 30 and the insulating connection parts 10 is reduced by shortening the distance between the two insulating connection parts 10 and each probe 30, so that the excessive force caused by the larger moment arm at both sides of the probes 30 can be avoided, and the damage to the wafer to be inspected in the inspection process due to the excessive needle pressure of the probes 30 is reduced.
In the case that the needle of the probe 30 has a smaller size, the probe 30 has a smaller pressure when applied to the wafer to be inspected, and the moment arm formed by the probe 30 and the insulating connection parts 10 is increased by increasing the distance between the two insulating connection parts 10 and each probe 30, so that the too small acting force caused by the smaller moment arm at the two sides of the probe 30 can be avoided, and the accuracy of inspecting the wafer to be inspected by the probe 30 in the inspection process is improved.
To facilitate adjustment of the moment arm formed by the probe 30 and the insulated connection 10, in some other alternative embodiments, the two insulated connection 10 have the same shape and/or the directions of extension of the two insulated connection 10 are the same. Further alternatively, both insulating connections 10 extend in the first direction.
In the above-described embodiments of the present disclosure, the conductive portion 20 may be formed of a conventional conductive material. In an alternative embodiment, the conductive portion 20 is a metal foil structure. The pitch of the conductive portions 20 formed by etching the metal foil can be made small while also facilitating adjustment of the thickness of the conductive portions 20. Illustratively, the conductive portion 20 is a copper foil structure.
According to another embodiment of the present disclosure, there is also provided a method for manufacturing the probe structure, including the steps of: forming a plurality of conductive parts 20, the plurality of conductive parts 20 being arranged at intervals along a first direction, and each conductive part 20 of the plurality of conductive parts 20 extending along a second direction, the first direction crossing the second direction; two insulating connection portions 10 provided at an interval on the same side of the plurality of conductive portions 20; a plurality of probes 30 are disposed on one side of the plurality of conductive parts 20 away from the two insulating connecting parts 10 in a one-to-one correspondence, and the plurality of probes 30 are located between the two insulating connecting parts 10.
Under the condition that the area of the welding pad on the wafer is smaller and denser, the distance between the plurality of conductive parts 20 is reasonably arranged, so that the alignment difficulty of the probe 30 and the welding pad on the wafer can be reduced, and meanwhile, as the two insulating connecting parts 10 are arranged at the same side of the plurality of conductive parts 20 at intervals in the manufacturing method of the probe structure, a force arm can be formed between the probe 30 and the insulating connecting parts 10, and the needle pressure can be adjusted by reasonably arranging the horizontal distance between the two insulating connecting parts 10 and the probe 30, so that the needle pressure meets the requirement of wafer detection, and the accuracy of wafer detection is improved.
Exemplary embodiments of a method of fabricating a probe structure according to the present application will be described in more detail below with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It should be appreciated that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art.
First, as shown in fig. 3, a plurality of conductive portions 20 are formed, the plurality of conductive portions 20 are arranged at intervals along a first direction, and each conductive portion 20 of the plurality of conductive portions 20 extends along a second direction, the first direction intersecting the second direction.
In an alternative embodiment, the step of forming the plurality of conductive portions 20 includes: providing a metal foil; the metal foil is etched to form a plurality of conductive portions 20 having an equidistant arrangement, as shown in fig. 3. The pitch of the conductive portions 20 formed by etching the metal foil can be made small while also facilitating adjustment of the thickness of the conductive portions 20.
Illustratively, the conductive portion 20 is a copper foil structure. The etching process may be wet etching, but is not limited to the above-described alternative species.
In an alternative implementation manner, the manufacturing method of the embodiment further includes the following steps: the metal foil is etched to form a support frame 40 surrounding the plurality of conductive portions 20 at the same time as the plurality of conductive portions 20, as shown in fig. 4. By adopting the alternative embodiment, the conductive part 20 and the supporting frame 40 are formed by the same etching process at the same time, so that the process flow can be simplified, and the process efficiency can be improved.
For example, the step of simultaneously forming the plurality of conductive parts 20 and the supporting frame 40 may include: providing a copper foil and etching the copper foil to a required thickness; and arranging a mask on the copper foil, wherein the mask corresponds to the patterns of the plurality of conductive parts 20 and the supporting frame 40 to be formed, etching the copper foil through the mask to remove partial areas in the copper foil, and forming the plurality of conductive parts 20 and the supporting frame 40 surrounding the plurality of conductive parts 20 by the residual copper foil.
In order to facilitate the layout design and process fabrication of the mask, in an alternative embodiment, as shown in fig. 4, adjacent conductive portions 20 of the plurality of conductive portions 20 are disposed at equal intervals. Since the conductive parts 20 may be formed by an etching process, the design of a mask used in the etching process may be facilitated by arranging the conductive parts 20 at equal intervals; on the other hand, by arranging the conductive portions 20 at equal intervals, it is also possible to facilitate adjustment of the intervals of the adjacent conductive portions 20 by the etching process.
In the above-described alternative embodiment, as shown in fig. 4, the width of each conductive portion 20 in the first direction may also be made the same. By having the conductive portions 20 with the same width in the first direction, not only is the design of the reticle in the etching process simpler, but also the pitch adjustment of adjacent conductive portions 20 is facilitated.
In order to further reduce the design difficulty of the mask during the etching process, and at the same time, facilitate the adjustment of the pitch between adjacent conductive portions 20, further alternatively, each conductive portion 20 has the same shape, as shown in fig. 4.
The plurality of conductive portions 20 are spaced apart along a first direction, and each conductive portion 20 of the plurality of conductive portions 20 extends along a second direction, in an alternative embodiment, as shown in fig. 4, the first direction a is perpendicular to the second direction B. By making the arrangement direction of the conductive portions 20 perpendicular to the extending direction, the reduction of the mask size in the etching process can be facilitated, and the adjustment of the pitch of the adjacent conductive portions 20 by the etching process is facilitated.
After the step of forming the plurality of conductive portions 20, as shown in fig. 5, two insulating connection portions 10 are provided at intervals on the same side of the plurality of conductive portions 20. The insulating connecting portion 10 is used to fix the plurality of conductive portions 20.
Illustratively, the material forming the insulating connection 10 includes a plastic such as polyvinyl chloride (PVC) or polymethyl methacrylate (PMMA).
Illustratively, before the step of disposing two insulating connecting portions 10 disposed at intervals on the same side of the plurality of conductive portions 20, a supporting frame 40 surrounding the plurality of conductive portions 20 is formed, and in the step of disposing the two insulating connecting portions 10, the insulating connecting portions 10 are further disposed on the supporting frame 40, as shown in fig. 5, so that the plurality of conductive portions 20 are fixedly connected to the supporting frame 40 through the two insulating connecting portions 10.
After the step of disposing the two insulating connection portions 10 disposed at intervals on the same side of the plurality of conductive portions 20, as shown in fig. 6, a plurality of probes 30 are disposed in one-to-one correspondence on the side of the plurality of conductive portions 20 away from the two insulating connection portions 10, the plurality of probes 30 being located between the two insulating connection portions 10.
Illustratively, a soldering process is employed to dispose a plurality of probes 30 on the plurality of conductive portions 20 in a one-to-one correspondence. The adoption of the soldering process can make the connection of the probe 30 on the conductive part 20 more firm, and avoid the reduction of the reliability of the device caused by the falling-off of the probe 30.
Because can constitute the arm of force between probe and the insulating connecting portion to through adjusting the setting position of above-mentioned two insulating connecting portions 10 and above-mentioned a plurality of probes 30 on a plurality of conductive parts 20, can change the horizontal distance between above-mentioned two insulating connecting portions and the probe, and then can realize the regulation to the syringe needle pressure through adjusting the arm of force, make syringe needle pressure satisfy the demand that the wafer detected.
For example, for the smaller-sized probes 30, in order to improve the accuracy of wafer inspection, the pressure of the probes 30 during the inspection process may be increased, and at this time, the moment arm formed by the probes 30 and the insulating connection portions 10 is increased by making the distance between the two insulating connection portions 10 and each probe 30 larger, so that the pressure of the probes 30 during the inspection process on the wafer to be inspected may be increased, and the pressure of the probe head may meet the requirement of wafer inspection.
In contrast, for the probes 30 with larger size, in order to avoid the influence of excessive pressure of the needle head of the probes 30 on the reliability of the wafer, the pressure of the probes 30 during the inspection process can be reduced, and at this time, the distance between the two insulating connecting portions 10 and each probe 30 is shortened to reduce the moment arm formed between the probes 30 and the insulating connecting portions 10, thereby reducing the acting force of the probes 30 during the inspection process, and enabling the pressure of the needle head to meet the requirement of the wafer inspection.
It should be noted that, in the manufacturing method provided in this embodiment, the sequence of each step is not limited to the above embodiment, as in this embodiment, a plurality of probes 30 may be disposed on the same side of the plurality of conductive portions 20 in a one-to-one correspondence manner, and then two insulating connection portions 10 disposed at intervals are disposed on one side of the plurality of conductive portions 20 away from the probes 30, so that the two insulating connection portions 10 are located on two sides of the plurality of probes 30.
According to another embodiment of the present disclosure, there is provided a wafer testing apparatus including a tester and a support table on which the probe structure (also referred to as a "probe card") described above is fixed. When the electrical test is performed, the tester can give a test signal to the probe on the probe card, the probe is contacted with the test pad of the wafer through needle insertion to achieve the purpose of the test, and the measured result is fed back to the tester.
According to another embodiment of the present disclosure, there is also provided a method for performing a wafer test using the probe structure described above, including the steps of: the probe structure is arranged in wafer test equipment, the wafer test equipment comprises a tester and a supporting table, and the probe structure (also called a probe card) is fixed on the supporting table.
In practical applications, the pressure exerted by the probes on the probe structures on the test pads of the wafer should be moderate; if the needle pressure is too high, damage to the probe and/or other films on the wafer may result; if the needle pressure is too small, poor contact between the probe and the test pad may result, affecting the test result.
The wafer 200 is placed on the base 100 of the supporting table, the horizontal distance between the two insulation connection parts 10 and the probe 30 in the probe structure shown in fig. 1 and 2 is reasonably set, the probe structure 300 is fixed on the test head above the supporting table, as shown in fig. 7, then the probe in the probe structure 300 is contacted with the test contact point on the wafer 200 by moving the base up and down, and the pressure applied on the two insulation connection parts is reasonably controlled in the test process, so that the regulation of the pressure of the needle head is realized, and the pressure of the needle head meets the requirement of wafer detection.
From the above description, it can be seen that the above embodiments of the present disclosure achieve the following technical effects:
1. Because the probe structure comprises two insulating connecting parts 10, a plurality of conductive parts 20 are arranged on the same side of the two insulating connecting parts 10 and are arranged at intervals along the first direction, and probes 30 are arranged on one side of the conductive parts 20, which is far away from the two insulating connecting parts 10, in a one-to-one correspondence manner, so that a force arm can be formed between the probes 30 and the insulating connecting parts 10, and the horizontal distance between the two insulating connecting parts 10 and the probes 30 is reasonably set, and meanwhile, the pressure applied to the two insulating connecting parts is reasonably controlled in the test process, so that the regulation of the pressure of a needle head can be realized, the pressure of the needle head meets the requirement of wafer detection, and the efficiency and the accuracy of wafer detection are further improved;
2. Because the plurality of conductive parts 20 in the probe structure are arranged at intervals along the first direction, and each conductive part 20 in the plurality of conductive parts 20 extends along the second direction, the first direction is intersected with the second direction, and therefore under the condition that the area of the bonding pad on the wafer is smaller and denser, the alignment difficulty of the probe 30 and the bonding pad on the probe structure can be reduced by reasonably arranging the intervals of the plurality of conductive parts 20.
The foregoing description of the preferred embodiments of the present disclosure is provided only and not intended to limit the disclosure so that various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (14)
1. A probe structure comprising:
The two insulating connecting parts are arranged at intervals;
A plurality of conductive parts disposed on the same side of the two insulating connection parts, the plurality of conductive parts being disposed at intervals along a first direction, and each of the plurality of conductive parts extending along a second direction, the first direction intersecting the second direction;
The probes are arranged on one side, away from the two insulating connecting parts, of the conductive parts in a one-to-one correspondence manner, and are positioned between the two insulating connecting parts;
Each conductive part comprises a first conductive segment, a second conductive segment and a third conductive segment which are sequentially connected, wherein one of the two insulating connecting parts is connected with a first mounting surface of the first conductive segment, the other of the two insulating connecting parts is connected with a second mounting surface of the third conductive segment, the first conductive segment has a first surface opposite to the first mounting surface, the third conductive segment has a second surface opposite to the second mounting surface, the first surface and the second surface are located in a first horizontal plane, the second conductive segment has a third mounting surface provided with the probe, and the third mounting surface is located in a second horizontal plane parallel to the first horizontal plane.
2. The probe structure of claim 1, wherein adjacent ones of the plurality of conductive portions are equally spaced.
3. The probe structure of claim 2, wherein a width of each of the conductive portions in the first direction is the same.
4. A probe structure according to claim 3, wherein each of the conductive portions has the same shape.
5. The probe structure of claim 1, wherein the first direction is perpendicular to the second direction.
6. The probe structure according to claim 1, wherein the probe is provided at a middle portion of the third mounting surface in the second direction.
7. The probe structure of claim 6, wherein the two insulating connections have the same shape.
8. The probe structure of any one of claims 1 to 7, wherein each conductive portion is a metal foil structure.
9. The probe structure according to any one of claims 1 to 7, further comprising a support frame connected to the insulating connecting portion, the conductive portion being connected to the support frame through the insulating connecting portion.
10. The probe structure of claim 9, wherein the support frame is disposed around an outer periphery of the plurality of conductive portions.
11. A method of fabricating a probe structure according to any one of claims 1 to 10, comprising the steps of:
Forming a plurality of conductive parts, wherein the plurality of conductive parts are arranged at intervals along a first direction, each conductive part extends along a second direction, the first direction crosses the second direction, and each conductive part comprises a first conductive segment, a second conductive segment and a third conductive segment which are sequentially connected;
two insulating connecting parts are arranged at intervals on the same side of the plurality of conductive parts;
A plurality of probes are correspondingly arranged on one side of the plurality of conductive parts, which is far away from the two insulating connecting parts, and the plurality of probes are positioned between the two insulating connecting parts;
one of the two insulating connection parts is connected with a first mounting surface of the first conductive segment, the other of the two insulating connection parts is connected with a second mounting surface of the third conductive segment, the first conductive segment has a first surface opposite to the first mounting surface, the third conductive segment has a second surface opposite to the second mounting surface, the first surface and the second surface are located in a first horizontal plane, the second conductive segment has a third mounting surface provided with the probe, and the third mounting surface is located in a second horizontal plane parallel to the first horizontal plane.
12. The method of manufacturing of claim 11, wherein forming the plurality of conductive portions comprises:
Providing a metal foil;
etching the metal foil to form the plurality of conductive portions having an equidistant arrangement.
13. The method of manufacturing of claim 12, wherein forming the plurality of conductive portions further comprises:
Etching the metal foil to form a support frame surrounding the plurality of conductive portions while forming the plurality of conductive portions.
14. The manufacturing method according to any one of claims 11 to 13, wherein the plurality of probes are provided on the plurality of conductive portions in one-to-one correspondence using a soldering process.
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| CN202210635765.7A CN115032430B (en) | 2022-06-07 | 2022-06-07 | Probe structure and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN115032430A (en) | 2022-09-09 |
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