CN115020537A - 一种p型ibc电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种P型IBC电池及其制备方法,制备方法包括:(1)硅基底双面抛光;(2)双面沉积隧穿氧化层和非晶硅层,高温磷扩;(3)背面涂覆一层浆料,烘干和退火处理后形成一层掩膜层;(4)利用激光对背面的掩膜层进行图形化开膜,在背面形成裸露的P区和覆盖有掩膜层的N区;(5)双面碱制绒;(6)双面沉积氧化铝膜;(7)双面沉积氮化硅膜;(8)利用激光对P区进行图形化开膜;(9)丝网印刷。本发明在硅基底背面单面涂覆一层能形成掩膜层的浆料,通过激光和碱制绒相结合的方式来实现隔离硅基底背面的P区和N区,碱制绒能够减少激光开膜过程对硅基底造成的损伤,容易实现单面沉积掩膜层,且无需额外清洗,节约工序。
Description
技术领域
本发明涉及太阳能电池技术领域,具体涉及一种P型IBC电池及其制备方法。
背景技术
目前P型PERC单晶太阳能电池为占市场份额最大的电池类型,但是由于技术机理限制,提升PERC单晶太阳能电池的转换效率已遇到瓶颈。N型IBC单晶太阳能电池因其具有更高的转换效率和潜力,业内纷纷将其作为下一代电池技术,但是N型IBC单晶太阳能电池通常采用PECVD在硅片背面沉积氮化硅或者氧化硅等介质膜作为掩膜,并且需要使用激光刻蚀掩膜技术来隔离P区和N区,这就导致工艺流程繁琐,生产成本显著提高,而且产品的良品率无法保证,在和其他高效单晶太阳能电池的竞争中没有明显的优势,严重影响了IBC单晶太阳能电池的推广和使用。
发明内容
为解决上述技术问题,本发明提出一种P型IBC电池及其制备方法,能够显著缩短IBC电池的生产流程,减少IBC电池生产的工艺步骤,而且能够避免或者减少激光隔离P区和N区时对硅基底的损伤,进而造成对电池转换效率的影响。
为了达到上述目的,一方面,本发明提供一种P型IBC电池的制备方法,包括如下步骤:
(1)硅基底双面抛光;
(2)双面沉积隧穿氧化层和非晶硅层,再进行高温磷扩散实现非晶硅层的掺杂和晶化,将非晶硅层转换成掺磷多晶硅层;
(3)在所述硅基底的背面涂覆一层浆料,并对所述硅基底进行烘干和退火处理,使得所述浆料在所述硅基底的背面形成一层掩膜层;
(4)利用激光对所述硅基底背面的掩膜层进行图形化开膜,刻蚀掉所述硅基底背面部分区域的掩膜层、掺杂多晶硅层以及隧穿氧化层,在所述硅基底的背面形成裸露的P区和覆盖有掩膜层的N区;
(5)双面碱制绒,所述硅基底的背面覆盖有掩膜层的区域不被碱液腐蚀,形成N区;所述硅基底的背面没有覆盖掩膜的区域通过碱液刻蚀减少激光损伤并露出硅基底,形成P区;此时所述硅基底的正面形成完整的绒面结构;
(6)双面沉积氧化铝膜;
(7)双面沉积氮化硅膜;
(8)利用激光对所述硅基底背面的P区进行图形化开膜,去除所述P区表面的氧化铝膜和氮化硅膜;
(9)在所述硅基底的背面进行丝网印刷,形成叉指状发射极,制得IBC单晶太阳能电池。
优选的,步骤(3)中,所述掩膜层不与碱溶液发生反应。
优选的,步骤(3)中,形成所述掩膜层的浆料为含有Ⅲ族元素掺杂改性的氧化硅、氧化铝、氮化硅、氮氧化硅中的一种或多种组合。
优选的,步骤(5)之后还包括HF酸清洗,用于去除所述硅基底背面的掩膜层。
优选的,步骤(2)中,所述掺磷多晶硅层的厚度为100~150nm。
优选的,步骤(2)中,所述掺磷多晶硅层的掺杂浓度为3E20~5E20atoms/cm3。
优选的,步骤(5)中,所述硅基底正面的绒面反射率为7~10%。
优选的,步骤(6)中,所述氧化铝膜的厚度为3~10nm。
优选的,步骤(7)中,所述氮化硅膜的厚度为70~90nm。
另一方面,本发明提供一种P型IBC电池,所述P型IBC电池采用上述制备方法所制得。
由于现有技术常常通过PECVD真空设备在制绒后硅基底的背面沉积保护膜,而且需要激光刻蚀保护膜来达到隔离P区和N区的目的,激光开槽面积大,对硅基底的损伤大,因此该方法的设备投入成本高,能耗大,而且PECVD方法实现单面沉积保护膜时通常会在硅基底另一面形成绕镀,因此需要增加额外的清洗去除绕镀,最终导致电池制备的工艺流程繁琐,成品电池的良品率大大降低,严重影响生产产能。
与现有技术相比,本发明具有以下优点:
本发明在硅基底背面单面涂覆一层能形成掩膜层的浆料,通过激光和碱制绒相结合的方式来实现隔离硅基底背面的P区和N区,碱制绒能够减少或者消除激光开膜过程中对硅基底造成的损伤,有利于提高电池的转换效率,而且本发明容易实现硅基底单面沉积掩膜层,相比PECVD等方式只能双面沉积掩膜层,本发明无需额外增加对硅基底正面的清洗,节约工序的同时也大大降低了生产成本。此外,掩膜层可以在制绒机台制绒后的酸洗槽中一并去除,简单方便易于操作,利于产业化推广。
附图说明
图1 -图9是本发明实施例一提供的P型IBC电池制备方法中各步骤对应的结构示意图;图中1-隧穿氧化层、2-掺磷多晶硅层、3-掩膜层、4-P区、5-氧化铝膜、6-氮化硅膜、7-银电极、8-铝电极。
具体实施方式
下面结合附图和实施例对本发明的技术方案作进一步的说明。
本发明实施例一提供一种P型IBC电池的制备方法,包括如下步骤:
(1)硅基底双面抛光。
具体地参见图1,选取P型单晶硅片,利用槽式碱抛设备对硅基底的正面和背面进行双面碱抛光。
在本实施例中,抛光液为碱性溶液,可以为氢氧化钠溶液或者氢氧化钾溶液。
(2)双面沉积隧穿氧化层1和非晶硅层,再进行高温磷扩散实现非晶硅层的掺杂和晶化,将非晶硅层转换成掺磷多晶硅层2。
具体地参见图2,将双面抛光后的P型单晶硅片通过LPCVD进行双面沉积隧穿氧化层1和非晶硅层,接着进行高温磷扩散来实现对非晶硅层的掺杂和晶化,使非晶硅层转变为掺杂多晶硅层2,其中,隧穿氧化层1的厚度为1~2nm,掺杂多晶硅层2的厚度为100~200nm,掺杂浓度为3E20-5E20atoms/cm3。
(3)在硅基底的背面涂覆一层浆料,并对硅基底进行烘干和退火处理,使得浆料在硅基底的背面形成一层掩膜层。
在一些实施例中,可以通过滚涂、印刷、喷涂、涂布等方式将用于形成掩膜层的浆料印刷至硅基底的背面,并按照电池设计需求形成图形化的掩膜层。
在一些实施例中,形成的掩膜层可以为单层结构,也可以为多层结构,其材料包括但不限于Ⅲ族元素掺杂改性的氧化硅、氧化铝、氮化硅、氮氧化硅的一种或多种组合,Ⅲ族元素选自硼、镓、铟中的一种或几种。
具体地参见图3,在P型单晶硅片的背面单面滚涂一层浆料,涂覆完浆料的P型单晶硅片经过烘干和退火在P型单晶硅片的背面形成一层稳定的掩膜层,该掩膜层不与碱溶液发生反应。本实施例中形成掩膜层的浆料优选包含有硼掺杂改性的氮氧化硅。
(4)利用激光对硅基底背面的掩膜层进行图形化开膜,刻蚀掉硅基底背面部分区域的掩膜层、掺杂多晶硅层以及隧穿氧化层,在硅基底的背面形成裸露的P区和覆盖有掩膜层的N区。
具体地参见图4,利用激光对P型单晶硅片背面的掩膜层进行图形化,刻蚀掉硅片背面部分区域的掩膜层、掺杂多晶硅层以及隧穿氧化层,掩膜层开膜的区域与硅片背面P区的图形区域一致,此时在硅片背面形成裸露的P区4和覆盖有掩膜层的N区。
(5)双面碱制绒,硅基底的背面覆盖有掩膜层的区域不被碱液腐蚀,形成N区;硅基底的背面没有覆盖掩膜层的区域通过碱液刻蚀减少激光损伤并露出硅基底,形成P区;此时硅基底的正面形成完整的绒面结构。
具体地参见图5,利用槽式制绒机台对P型单晶硅片进行双面制绒,硅片背面覆盖有掩膜层的区域,掩膜层能够保护硅片不被制绒碱液腐蚀,形成N区;但是硅片背面没有覆盖掩膜层的区域会被制绒碱液刻蚀掉,减少步骤(4)中激光开膜带来的损伤,并露出硅基底形成P区4,此时硅片正面形成完整的绒面结构,正面绒面的反射率控制在7~10%。
进一步地,P型单晶硅片背面的掩膜层可以通过制绒机台自带的HF酸洗槽清洗干净,因此不需要增加额外的清洗步骤,整合了工艺流程,缩减了工艺步骤。
(6)双面沉积氧化铝膜5。
具体地参见图6,利用ALD在P型单晶硅片的正面和背面沉积氧化铝5膜,氧化铝膜5的厚度为3~10nm。
(7)双面沉积氮化硅膜6。
具体地参见图7,利用管式PECVD在P型单晶硅片的正面和背面沉积氮化硅膜6,氮化硅膜6的厚度70~90nm。
(8)利用激光对硅基底背面的P区进行图形化开膜,去除P区表面的氧化铝膜和氮化硅膜。
具体地参见图8,利用激光对P型单晶硅片背面的P区4进行图形化开膜,用于去除P区4表面的氧化铝膜5和氮化硅膜6,便于铝浆的接触。
(9)在硅基底的背面进行丝网印刷,形成叉指状发射极,制得P型IBC电池。
具体地参见图9,在P型单晶硅片背面的N区和P区分别丝网印刷银电极7和铝电极8,形成叉指状发射极,制得P型IBC太阳能电池。
本发明实施例二提供一种P型IBC电池,采用实施例一的制备方法所制成。
Claims (10)
1.一种P型IBC电池的制备方法,其特征在于,包括如下步骤:
(1)硅基底双面抛光;
(2)双面沉积隧穿氧化层和非晶硅层,再进行高温磷扩散实现非晶硅层的掺杂和晶化,将非晶硅层转换成掺磷多晶硅层;
(3)在所述硅基底的背面涂覆一层浆料,并对所述硅基底进行烘干和退火处理,使得所述浆料在所述硅基底的背面形成一层掩膜层;
(4)利用激光对所述硅基底背面的掩膜层进行图形化开膜,刻蚀掉所述硅基底背面部分区域的掩膜层、掺杂多晶硅层以及隧穿氧化层,在所述硅基底的背面形成裸露的P区和覆盖有掩膜层的N区;
(5)双面碱制绒,所述硅基底的背面覆盖有掩膜层的区域不被碱液腐蚀,形成N区;所述硅基底的背面没有覆盖掩膜的区域通过碱液刻蚀减少激光损伤并露出硅基底,形成P区;此时所述硅基底的正面形成完整的绒面结构;
(6)双面沉积氧化铝膜;
(7)双面沉积氮化硅膜;
(8)利用激光对所述硅基底背面的P区进行图形化开膜,去除所述P区表面的氧化铝膜和氮化硅膜;
(9)在所述硅基底的背面进行丝网印刷,形成叉指状发射极,制得P型IBC电池。
2.根据权利要求1所述的一种P型IBC电池的制备方法,其特征在于,步骤(3)中,所述掩膜层不与碱溶液发生反应。
3.根据权利要求2所述的一种P型IBC电池的制备方法,其特征在于,步骤(3)中,形成所述掩膜层的浆料为含有Ⅲ族元素掺杂改性的氧化硅、氧化铝、氮化硅、氮氧化硅中的一种或多种组合。
4.根据权利要求1所述的一种P型IBC电池的制备方法,其特征在于,步骤(5)之后还包括HF酸清洗,用于去除所述硅基底背面的掩膜层。
5.根据权利要求1所述的一种P型IBC电池的制备方法,其特征在于,步骤(2)中,所述掺磷多晶硅层的厚度为100~150nm。
6.根据权利要求5所述的一种P型IBC电池的制备方法,其特征在于,步骤(2)中,所述掺磷多晶硅层的掺杂浓度为3E20~5E20atoms/cm3。
7.根据权利要求1所述的一种P型IBC电池的制备方法,其特征在于,步骤(5)中,所述硅基底正面的绒面反射率为7~10%。
8.根据权利要求1所述的一种P型IBC电池的制备方法,其特征在于,步骤(6)中,所述氧化铝膜的厚度为3~10nm。
9.根据权利要求1所述的一种P型IBC电池的制备方法,其特征在于,步骤(7)中,所述氮化硅膜的厚度为70~90nm。
10.一种P型IBC电池,其特征在于,采用权利要求1-9中任一项权利要求所述的制备方法所制得。
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