CN114974763B - 一种芯片热敏电阻器制备方法 - Google Patents

一种芯片热敏电阻器制备方法 Download PDF

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CN114974763B
CN114974763B CN202210642961.7A CN202210642961A CN114974763B CN 114974763 B CN114974763 B CN 114974763B CN 202210642961 A CN202210642961 A CN 202210642961A CN 114974763 B CN114974763 B CN 114974763B
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杨俊�
谢强
敖来远
陈传庆
邓瑞雪
尚勇
谭柳茂
伍秦至
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China Zhenhua Group Yunke Electronics Co Ltd
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Abstract

一种芯片热敏电阻器制备方法,属于电子元器件领域。所述制备方法包括:采用共沉淀法制备热敏陶瓷粉体,添加微晶玻璃复合热敏陶瓷粉体;将热敏陶瓷粉体作为掺杂剂与电极浆料混合,制备低温共烧用电极浆料;采用流延工艺制备成生瓷带并切割成设定大小的膜片;印刷电极浆料;叠片及真空包装;等静压制备成巴块并切割成生坯;共烧制备成芯片热敏电阻器。解决了现有技术中需要对热敏陶瓷材料进行两次高温烧结造成热敏电阻器性能变差以及熟瓷切割造成切割损伤的问题。所述芯片热敏电阻器参数一致性好,批量生产工艺的质量一致性、重复性、可靠性高,在切割过程中不会产生毛刺、卷边、隆起等现象。广泛应用于芯片热敏电阻器的制备工艺中。

Description

一种芯片热敏电阻器制备方法
技术领域
本发明属于电子元器件领域,进一步来说涉及热敏电阻器领域,具体来说,涉及一种芯片热敏电阻器制备方法。
背景技术
单层片式芯片热敏电阻器,具有体积小、热时间常数小,性能稳定、可靠性高、电极附着力强等优点,非常适合微组装工艺,用于T/R组件中进行温度测量,或者对电路中的元器件进行温度补偿。芯片热敏电阻器的基体材料为片式热敏陶瓷,两面电极全覆盖,电极材料可为金、银、银钯等材料。目前,国内外生产厂家主要有美国QTI公司、成都宏明电子、广东爱晟电子等公司,其主要生产方式是通过流延或模压等方法制备热敏陶瓷生坯,再经高温烧结,烧结温度在1000℃~1300℃之间,制备片式热敏陶瓷体,热敏陶瓷体经多线切割或者减薄、抛光等方法制备热敏陶瓷基片,再经丝网印刷工艺在热敏陶瓷基片表面印刷电极浆料,再使用高温进行电极烧结,最后经砂轮切割的方法制备片式芯片热敏电阻器。该方法在制备芯片热敏电阻器的过程中,需要对热敏陶瓷材料需进行两次高温烧结,热敏陶瓷材料对烧结温度具备一定的敏感性,烧结过程中的升降温速率、温度稳定性都能够对材料电阻率、B值产生影响,使其离散性增加,对制备高精度热敏电阻器极为不利。同时该方法采用熟瓷切割的方式,由于电极材料具备一定的延展性,在切割过程中电极层会随切割力的方向延展,造成毛刺、卷边、隆起等现象。
如何实现单次烧结制备片式热敏电阻器,并降低切割过程中对电极层的损耗,是行业迫切的,因此,本发明提供一种LTCC芯片热敏电阻器制备方法。
有鉴于此,特提出本发明。
发明内容
本发明所要解决的技术问题是:解决现有技术中需要对热敏陶瓷材料进行两次高温烧结造成热敏电阻器性能变差以及熟瓷切割造成切割损伤的问题。
为此,本发明提供一种芯片热敏电阻器制备方法,如图1所示。包括如下工艺:
(1)采用共沉淀法制备高活性热敏陶瓷粉体,再复合微晶玻璃制备低温烧结热敏陶瓷粉体;
(2)采用制备的热敏陶瓷粉体掺杂电极浆料制备匹配共烧电极浆料;
(3)采用流延工艺制备成生瓷带,将生瓷带切割成设定大小的膜片;
(4)在用作电极的膜片表面进行电极浆料印刷;
(5)按照顺序使用叠片机进行叠片:底层为电极朝下的印刷电极膜片,中间为未印刷电极资料的生瓷带,生瓷带的层数由芯片热敏电阻器的设计厚度决定,顶层为电极朝上的印刷电极膜片;
(6)叠片完成后,使用铝塑袋进行真空包装;
(7)将铝塑袋真空包装后的叠片经等静压制备成巴块;
(8)使用热切机将巴块切割成生坯;
(9)将切割完成的生坯进行共烧,制备成芯片热敏电阻器。
性能测试:在油浴中对芯片热敏电阻器进行性能测试。
使用所述一种芯片热敏电阻器制备方法制备的芯片热敏电阻器只需高温烧结一次,避免二次烧结增加阻值离散型,同时采用生坯切割避免造成电极损伤。
所述芯片热敏电阻器参数一致性好,批量生产工艺的质量一致性、重复性、可靠性高,生产效率高,成品率高,生产成本低,在切割过程中不会产生毛刺、卷边、隆起等现象。可广泛应用于芯片热敏电阻器的制备工艺中,应用前景广阔。
附图说明
图1为本发明工艺流程示意图。
具体实施方式
结合图1所示的工艺流程图,所述一种芯片热敏电阻器制备方法的具体实施方式如下:
实施例1:
(1)热敏陶瓷粉体制备:,按照摩尔比Mn(0.9~1.4):Co(1.3~1.9):Zn(0.01~0.1):Bi为(0.01~0.05),进行配料混合,其中原材料分别为50%硝酸锰溶液,六水硝酸钴、乙酸锌以及硝酸铋溶液,沉淀剂为草酸铵,采用共沉淀法制备沉淀,再经高温煅烧合成热敏陶瓷粉体,合成温度为700℃~850℃;
(2)低温共烧LTCC热敏陶瓷粉体制备:(1)中制备的热敏陶瓷粉体,掺入5wt%~30wt%微晶玻璃粉体,微晶玻璃粉体为硼硅玻璃、钙硼硅玻璃、铝硼硅玻璃、铅硼硅玻璃中的一种或几种;
(3)低温共烧用电极浆料制备:电极浆料中掺杂(2)中制备的低温共烧热敏陶瓷粉体,掺杂量为0.5wt%~2wt%,其中电极浆料为福禄公司CN398、杜邦公司6141、5742型浆料中的一种;
(4)流延浆料配制:低温烧结热敏陶瓷粉体、溶剂、分散剂按比例进行称量,称量完成后,使用罐磨机进行混合分散,罐磨机转速为30r/min~200r/min,时间为6h~24h,分散剂为AKM0531,溶剂为酒精、甲苯、二甲苯、丁酮中的一种或几种;低温热敏陶瓷粉体为80~120份,溶剂为50~70份,分散剂为1份。
(5)加胶球磨:球磨完成后,加入粘合剂,作为成型树脂,粘合剂为肇庆吉美电子科技有限公司生产的LS粘合剂,添加量为热敏陶瓷粉体质量的(25wt%~35wt%),添加完成后继续球磨6h~12h,球磨转速为20r/min~60r/min。
(6)脱泡:球磨完成后,浆料过400目砂布后储存于烧杯中,进行真空脱泡,脱泡时间为30min~60min。
(7)流延成型:脱泡完成的浆料使用流延机进行流延烘干,流延速度为0.5m/min~2m/min,流延烘干最高段温度为65℃,流延膜片厚度为20μm~100μm。
(8)裁片:使用裁片机将流延成型的膜片,裁剪为200mm×200mm。
(9)丝网印刷:取2张膜片进行丝网印刷,印刷浆料可为银浆或者金浆,电极层厚度为5μm~15μm。
(10)叠层:使用叠片机按照:印刷电极膜片(电极朝下)→生瓷带(按需求厚度叠加)→印刷电极膜片(电极朝上)的方式进行叠片。
(11)等静压:叠片完成的巴块进行真空封装,置于等静压机中进行等静压,温度为65℃,压力为60Mpa,时间为20min。
(12)热切:使用热切机进行切割,形成生坯。
(13)匹配共烧:使用箱式炉进行生坯高温烧结,烧结温度为850℃~900℃,时间为20min~60min。
实施例2:
(1)热敏陶瓷粉体制备:按Mn1.1Co1.4Zn0.05Bi0.05摩尔比进行配料,其中原材料分别为50%硝酸锰溶液,六水硝酸钴、乙酸锌以及五水硝酸铋溶液,沉淀剂为草酸铵,采用共沉淀法制备沉淀,再经高温煅烧合成热敏陶瓷粉体,煅烧温度为750℃;
(2)低温共烧LTCC热敏陶瓷粉体制备:(1)中制备的热敏陶瓷粉体,掺入5wt%~30wt%微晶玻璃粉体,微晶玻璃粉体为硼硅玻璃、钙硼硅玻璃、铝硼硅玻璃、铅硼硅玻璃中的一种或几种;
(3)低温共烧用电极浆料制备:电极浆料中掺杂(2)中制备的低温共烧热敏陶瓷粉体,掺杂量为0.5wt%~2wt%,其中电极浆料为福禄公司CN398、杜邦公司6141、5742型浆料中的一种;
(4)流延浆料配制:低温共烧热敏陶瓷粉体,按质量比进行称量,热敏陶瓷粉体100份、甲苯32份、酒精28份、分散剂1份,球磨转速80r/min,时间为24h。
(5)加胶球磨:球磨完成后,加入LS粘合剂30份,继续球磨8h,转速为60r/min。
(6)脱泡:二次球磨完成后,混合浆料过400目筛网,真空脱泡时间为40min。
(7)流延成型:脱泡完成的浆料使用流延机进行流延烘干,流延速度为1m/min,流延烘干最高段温度为65℃,流延膜片厚度为40μm。
(8)裁片:使用裁片机将流延成型的膜片,裁剪为200mm×200mm。
(9)丝网印刷:取2张膜片进行丝网印刷,印刷浆料可为银浆,电极层厚度为6μm~15μm。
(10)叠层:使用叠片机按照:印刷电极膜片(电极朝下)→生瓷带(按需求厚度叠加)→印刷电极膜片(电极朝上)的方式进行叠片。
(11)等静压:叠片完成的巴块进行真空封装,置于等静压机中进行等静压,温度为65℃,压力为60Mpa,时间为20min。
(12)热切:使用热切机进行切割,切割尺寸为2mm×2mm。
(13)匹配烧结:使用箱式炉进行产品高温烧结,烧结温度为850℃~900℃,时间为20min~60min。
性能测试:在油浴中进行芯片热敏电阻器性能测试,产品阻值为8.6KΩ,统计1000只产品,阻值极差为±2%,B25/50为3601。
最后应说明的是:上述实施例仅仅是为清楚地说明所作的举例,本发明包括但不限于以上实施例,这里无需也无法对所有的实施方式予以穷举。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。凡符合本发明要求的实施方案均属于本发明的保护范围。

Claims (5)

1.一种芯片热敏电阻器制备方法,其特征在于,包括如下工艺:
(1)采用共沉淀法制备热敏陶瓷粉体,按照摩尔比Mn:Co:Zn:Bi =(0.9~1.4):(1.3~1.9):(0.01~0.1):(0.01~0.05),进行配料混合,其中原材料分别为50%硝酸锰溶液,六水硝酸钴、乙酸锌以及五水硝酸铋溶液,沉淀剂为草酸铵,采用共沉淀法制备沉淀,再经高温煅烧合成热敏陶瓷粉体,合成温度为700℃~850℃;
(2)掺入5wt%~30wt%微晶玻璃粉体到(1)中制备的热敏陶瓷粉体中进行复合,制备低温共烧热敏陶瓷粉体,所述微晶玻璃粉体为硼硅玻璃、钙硼硅玻璃、铝硼硅玻璃、铅硼硅玻璃中的一种或几种;
(3)将(2)中制备的低温共烧热敏陶瓷粉体作为掺杂剂,掺入0.5wt%~2wt%低温共烧热敏陶瓷粉体到电极浆料中混合,制备低温共烧用电极浆料;
(4)流延浆料配制:
A、按质量份数将80份~120份低温烧结热敏陶瓷粉体、50份~70份溶剂、1份分散剂进行称量,称量完成后,使用罐磨机进行混合分散,罐磨机转速为30r/min~200r/min,时间为6h~24h;
所述分散剂为AKM0531;
所述溶剂为酒精、甲苯、二甲苯、丁酮中的一种或几种;
B、加胶球磨:球磨完成后,加入粘合剂,作为成型树脂,添加量为热敏陶瓷粉体质量的25wt%~35wt%,添加完成后继续球磨6h~12h,球磨转速为20r/min~60r/min;
C、脱泡:将球磨完成后的浆料经过400目砂布后储存于烧杯中,进行真空脱泡,脱泡时间为30min~60min;
(5)采用流延工艺制备成生瓷带:脱泡完成的浆料使用流延机进行流延烘干,流延速度为0.5m/min~2m/min,流延烘干最高段温度为65℃,流延膜片厚度为20μm~100μm;
(6)将生瓷带切割成设定大小的膜片;
(7)在用作电极的膜片表面进行电极浆料印刷:取2张膜片进行丝网印刷,印刷浆料可为银浆或者金浆,电极层厚度为5μm~15μm;
(8)按照顺序使用叠片机进行叠片:底层为电极朝下的印刷电极膜片,中间为未印刷电极资料的生瓷带,生瓷带的层数由芯片热敏电阻器的设计厚度决定,顶层为电极朝上的印刷电极膜片;
(9)等静压制备成巴块:
A、叠片完成后,使用铝塑袋进行真空包装;
B、置于等静压机中进行等静压,温度为65℃,压力为60Mpa,时间为20min;
(10)使用热切机将巴块切割成生坯;
(11)将切割完成的使用箱式炉进行生坯高温烧结,烧结温度为850℃~900℃,时间为20min~60min,制备成芯片热敏电阻器。
2.如权利要求1所述的一种芯片热敏电阻器制备方法,其特征在于,所述芯片热敏电阻器的性能测试是在油浴中对芯片热敏电阻器进行性能测试。
3.如权利要求1所述的一种芯片热敏电阻器制备方法,其特征在于,所述电极浆料为福禄公司CN398、杜邦公司6141、5742型浆料中的一种。
4.如权利要求1所述的一种芯片热敏电阻器制备方法,其特征在于:
所述热敏陶瓷粉体是按Mn1.1Co1.4Zn0.05Bi0.05摩尔比进行配料;
所述流延浆料配制是按质量比进行称量,热敏陶瓷粉体100份、甲苯32份、酒精28份、分散剂1份,球磨转速80r/min,时间为24h;
所述加胶球磨的LS粘合剂为30份,球磨时间为8h,转速为60r/min;
所述脱泡的真空脱泡时间为40min;
所述流延速度为1m/min,流延膜片厚度为40μm;
所述膜片尺寸为200mm×200mm;
所述生坯尺寸为2mm×2mm。
5.如权利要求4所述的一种芯片热敏电阻器制备方法,其特征在于,所述芯片热敏电阻器的阻值为8.6KΩ,阻值极差为±2%,B25/50为3601。
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