CN114902381B - 基板处理装置、半导体装置的制造方法以及存储介质 - Google Patents

基板处理装置、半导体装置的制造方法以及存储介质

Info

Publication number
CN114902381B
CN114902381B CN202080089801.3A CN202080089801A CN114902381B CN 114902381 B CN114902381 B CN 114902381B CN 202080089801 A CN202080089801 A CN 202080089801A CN 114902381 B CN114902381 B CN 114902381B
Authority
CN
China
Prior art keywords
gas
gas supply
reaction tube
substrate
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080089801.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN114902381A (zh
Inventor
冈岛优作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of CN114902381A publication Critical patent/CN114902381A/zh
Application granted granted Critical
Publication of CN114902381B publication Critical patent/CN114902381B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN202080089801.3A 2020-02-05 2020-02-05 基板处理装置、半导体装置的制造方法以及存储介质 Active CN114902381B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/004436 WO2021156987A1 (ja) 2020-02-05 2020-02-05 基板処理装置、半導体装置の製造方法および記録媒体

Publications (2)

Publication Number Publication Date
CN114902381A CN114902381A (zh) 2022-08-12
CN114902381B true CN114902381B (zh) 2026-01-13

Family

ID=77200809

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080089801.3A Active CN114902381B (zh) 2020-02-05 2020-02-05 基板处理装置、半导体装置的制造方法以及存储介质

Country Status (5)

Country Link
US (1) US12601058B2 (https=)
JP (1) JP7304975B2 (https=)
CN (1) CN114902381B (https=)
TW (1) TWI868301B (https=)
WO (1) WO2021156987A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7565885B2 (ja) * 2021-07-27 2024-10-11 三菱電機株式会社 半導体装置の製造方法および半導体製造装置
WO2023127031A1 (ja) * 2021-12-27 2023-07-06 株式会社Kokusai Electric 基板処理装置、処理容器、半導体装置の製造方法及びプログラム
US12557593B2 (en) 2022-02-09 2026-02-17 Tokyo Electron Limited Substrate processing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214312A (ja) * 1998-01-26 1999-08-06 Sony Corp 半導体製造装置
CN102751216A (zh) * 2011-04-18 2012-10-24 东京毅力科创株式会社 热处理装置
CN106367805A (zh) * 2015-07-20 2017-02-01 株式会社Eugene科技 衬底处理设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534690A (en) * 1978-09-04 1980-03-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Low pressure gas phase growing apparatus
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
JPS6376879A (ja) * 1986-09-18 1988-04-07 Hitachi Electronics Eng Co Ltd Ｃｖｄ薄膜形成装置
JPH1121432A (ja) 1997-06-30 1999-01-26 Nippon Shiyaauin Uiriamuzu Kk 半導体封止材
US20080173238A1 (en) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
JP2008172205A (ja) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および反応容器
JP5144295B2 (ja) 2007-02-28 2013-02-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2011195863A (ja) * 2010-03-18 2011-10-06 Mitsui Eng & Shipbuild Co Ltd 原子層堆積装置及び原子層堆積方法
JP5645718B2 (ja) 2011-03-07 2014-12-24 東京エレクトロン株式会社 熱処理装置
JP2014216540A (ja) * 2013-04-26 2014-11-17 東京エレクトロン株式会社 成膜装置のクリーニング方法および成膜装置
KR101682153B1 (ko) * 2015-04-14 2016-12-02 주식회사 유진테크 기판처리장치
JP6578243B2 (ja) * 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
WO2018022137A1 (en) * 2016-07-28 2018-02-01 Applied Materials, Inc. Gas purge system and method for outgassing control
JP2019046941A (ja) * 2017-08-31 2019-03-22 東芝メモリ株式会社 半導体製造装置、ウェハ搬送装置、およびウェハ搬送方法
JP6952595B2 (ja) * 2017-12-20 2021-10-20 東京エレクトロン株式会社 縦型熱処理装置
JP6856576B2 (ja) * 2018-05-25 2021-04-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214312A (ja) * 1998-01-26 1999-08-06 Sony Corp 半導体製造装置
CN102751216A (zh) * 2011-04-18 2012-10-24 东京毅力科创株式会社 热处理装置
CN106367805A (zh) * 2015-07-20 2017-02-01 株式会社Eugene科技 衬底处理设备

Also Published As

Publication number Publication date
TW202137329A (zh) 2021-10-01
TWI868301B (zh) 2025-01-01
JPWO2021156987A1 (https=) 2021-08-12
US20220349061A1 (en) 2022-11-03
WO2021156987A1 (ja) 2021-08-12
JP7304975B2 (ja) 2023-07-07
CN114902381A (zh) 2022-08-12
US12601058B2 (en) 2026-04-14

Similar Documents

Publication Publication Date Title
CN107086189B (zh) 衬底处理装置
US12293932B2 (en) Substrate processing apparatus, elevator and method of manufacturing semiconductor device
US20090124083A1 (en) Film formation apparatus and method for using same
CN114902381B (zh) 基板处理装置、半导体装置的制造方法以及存储介质
CN117913000A (zh) 衬底处理装置、半导体器件的制造方法及记录介质
US20230220546A1 (en) Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US20220356580A1 (en) Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
CN107924841A (zh) 气体供给部、衬底处理装置及半导体器件的制造方法
WO2021033461A1 (ja) 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
CN111033714B (zh) 基板处理装置、半导体器件的制造方法及记录介质
US11299804B2 (en) Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
CN113496918A (zh) 气化装置、衬底处理装置、清洁方法及半导体器件的制造方法
CN114250447B (zh) 半导体装置的制造方法、基板处理装置和记录介质
CN115116844A (zh) 喷嘴的清洁方法、基板处理方法、半导体装置的制造方法、基板处理装置和记录介质
CN112309927B (zh) 基板处理装置、基板支撑件以及半导体装置的制造方法
US20240254630A1 (en) Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium
CN117043917A (zh) 基板保持件、基板处理装置、半导体装置的制造方法以及程序
EP4117023A1 (en) Method of processing substrate, substrate processing apparatus, and recording medium
TW202312390A (zh) 半導體裝置之製造方法、基板處理方法、基板處理裝置及記錄媒體
CN113574640B (zh) 半导体装置的制造方法、基板处理装置和记录介质
KR102870586B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 방법
KR20260053564A (ko) 기판 처리 장치, 승강 기구, 기판 처리 방법, 반도체 장치의 제조 방법 및 프로그램

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant