CN114891022A - 一种有机纳米格子分子材料及其应用 - Google Patents
一种有机纳米格子分子材料及其应用 Download PDFInfo
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- 125000003118 aryl group Chemical group 0.000 claims abstract description 8
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- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/22—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains four or more hetero rings
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- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D517/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
- C07D517/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains four or more hetero rings
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- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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Abstract
本发明公开了一种有机纳米格子分子材料,其结构通式为:
Description
技术领域
本发明属于有机存储器的材料技术领域,具体的说是一种有机纳米格子分子材料及其应用。
背景技术
技术发展的日新月异,对于互联网,云计算的要求也逐渐提高,随之而来的是对存储芯片的大量需求。而随着老式存储结构的固化,摩尔定律的进一步证实,新一代存储器的发展应运而生,不仅要求存储器拥有更快的读写速度、尺寸更小、存储密度更高以及制作工艺更简单。并且具有柔性化、轻便易携带等特点。同时,在大批量制作和可控成本领域都有较好的表现。可与柔性衬底相兼容易于集成、单只晶体管驱动、非破坏性读取等诸多优点,且与目前CMOS电路兼容度高,有望成为新一代存储器的主流替代方案,在存储芯片、柔性集成电路和柔性显示等。
有机场效应晶体管存储器较之传统的有机场效应晶体管在半导体层和栅极之间加入了载流子俘获层。而俘获层根据俘获特性的不同可以分为三种类型:铁电型、浮栅型、驻极体型,三种有各自的优劣势。铁电型的材料有PZT、MXD6或P(VDF/TrFE)等,其场效应晶体管存储器不会受外界条件影响,能长久的保存数据,但存在较大的漏电流、耐受性较差、极化的保持力较差等问题。浮栅型的材料主要为Au、Ag、Cu、有机材料等的纳米粒子、二维材料等,其OFET存储器存储密度高、可大面积在柔性衬底上加工。但存在擦写电压高、存储稳定性、复杂的加工工艺和器件结构等问题。有机驻极体OFET存储器在无外电场作用下,能半永久保持电极化状态的电介质。
现有技术中为了提高存储器的性能往往是通过改变存储器的材料来实现的。如现有技术中申请公布号为CN109524546A,名称为一种基于纳米格子分子的有机场效应晶体管存储器及其制备方法,公开了一种有机纳米格子分子材料,其存在:存储窗口过小,噻吩基团不稳定等缺陷,因此,优秀OPV材料苯并二噻吩进入了我们的视野,优秀的平面结构有利于电子的运输和转移,易于形成宽带隙结构材料,因此设计此分子,引入BDT材料进行存储器件探索。
发明内容
为了解决上述问题,本发明提供了一种有机纳米格子分子材料及其应用。
为了达到上述目的,本发明是通过以下技术方案来实现的:
本发明是一种有机纳米格子分子材料,有机纳米格子分子材料的结构通式为:
其中:
R为氢或具有1至22个碳原子的直链、支链或者环状烷基链或其烷氧基链;
X原子为C或N;
Y原子为O,S或Se;
G为芳香基团或者非芳香基团。
本发明的进一步改进在于:有机纳米格子分子材料的制备方法为:基于Suzuki-Miyaura反应,Friedel-Crafts反应,从二-溴芴酮出发,通过格式反应合成叔醇产物,通过Friedel-Crafts反应合成有机纳米格子分子材料。
本发明的进一步改进在于:当X为C,Y为S,R为直链辛氧基,G为氢时,格子分子结构为:
合成路线为:
其制备方法是:单溴芴酮通过格式反应和Friedel–Crafts反应得到化合物1,化合物1与苯并二噻吩的硼酸在Pd(PPh3)4催化剂,碱溶液选择K2CO3/KF条件下Suzuki偶联,高效的得到单取代的L形前体,L形前体通过自身的双活性位点叔醇基团及噻吩的α位在Et2O·BF3催化下Friedel–Crafts反应闭环得到纳米格子分子。
有机纳米格子分子材料的结构通式还可以为:
一种有机纳米格子分子材料在有机场效应晶体管存储器中的应用,所述有机纳米格子分子材料用于制作有机场效应晶体管存储器的电荷存储层。
本发明的有益效果是:本发明合成了有机纳米格子分子材料,并通过核磁共振氢谱(1-HNMR)、高分辨质谱(HRMS)表征纳米格子分子的结构,通过循环伏安法表征了它们的电化学性质。通过以上手段对纳米格子分子测试,其结果表明该类纳米格子分子表现出良好的电化学稳定性。其主要优点在于:(1)合成方式模块化,高拓展性;(2)刚性框架结构提供高的热学、电化学稳定性等优点;(3)框架的刚性结构可减少器件制备过程中的薄膜溶剂依赖性;(4)相比于COFs、MOFs分子,此类可溶性材料可以实现大面积溶液加工。
附图说明
图1为实施例1制备的纳米格子分子的核磁共振氢谱图;
图2为实施例1制备的纳米格子分子的高分辨质谱图;
图3为实施例1制备的纳米格子分子的循环伏安曲线;
图4是基于实施例1的纳米格子分子的有机场效应晶体管存储器测试的转移特性曲线;
图5是实施例1的纳米格子分子的有机场效应晶体管存储器测试的输出特性曲线
图6是实施例1的纳米格子分子的有机场效应晶体管存储器测试的负向存储窗口特性曲线。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。但是本发明的技术内容并不限于下述实施例的限制。
本发明是一种有机纳米格子分子材料,有机纳米格子分子材料的结构通式为:
其中:
R为氢或具有1至22个碳原子的直链、支链或者环状烷基链或其烷氧基链;
X原子为C或N;
Y原子为O,S或Se;
G为芳香基团或者非芳香基团。
有机纳米格子分子材料的合成路线为:
实施例1
合成路线为:
其制备方法是:单溴芴酮通过格式反应和Friedel–Crafts反应得到化合物1,化合物1与苯并二噻吩的硼酸在Pd(PPh3)4催化剂,碱溶液选择K2CO3/KF条件下Suzuki偶联,高效的得到单取代的L形前体,L形前体通过自身的双活性位点叔醇基团及噻吩的α位在Et2O·BF3催化下Friedel–Crafts反应闭环得到纳米格子分子。
具体制备步骤如下:
制备化合物1:镁条(0.6g,25.5mmol)加入20mL的无水THF,氮气保护,加入几粒碘,将溶解有1-溴-4-(辛氧基)苯(6.1g,21.2mmol)的20mL无水THF逐滴加入上述溶液,用电吹风局部加入反应,使溶液持续平稳的回流1小时,冷却至室温,得到相应的格式试剂。将2,7-二溴-9H-芴-9-酮(6.5g,19.3mmol)加入50mL无水的THF中,把之前制备的格式试剂用注射器转移到上述溶液中,溶液升温至70℃搅拌过夜。溶液冷却至室温,倒入50mL饱和氯化铵溶液中,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚:二氯甲烷(1:1,v/v),得到目标产物1。
化合物2:250mL双口烧瓶加入二氯甲烷溶(150ml),将化合物1和催化剂BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚/二氯甲烷,v/v=8:1),得到淡绿色油状产物2。
化合物4:化合物2、叔醇硼酸、Pd(PPh3)4加入150mL圆底烧瓶,K2CO3和甲苯在使用前分别通入氮气30min以除去溶液中的氧气。将上述溶液分别注入圆底烧瓶中,溶液升温至100℃,回流24小时。溶液冷却至室温,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚/二氯甲烷,v/v=3:1),得到浅绿色粉末固体4。
苯并二噻吩基纳米格子分子:250mL双口烧瓶加入化合物4的二氯甲烷溶液(150mL),将BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入20mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚/二氯甲烷,v/v=4:1),得到淡黄色固体产物。
实施例2
纳米格子分子结构为:
合成路线为:
制备步骤为:
制备化合物1:镁条(0.6g,25.5mmol)加入20mL的无水THF,氮气保护,加入几粒碘,将溶解有1-溴-4-(甲氧基)苯(5.4g,10-20mmol)的20mL无水THF逐滴加入上述溶液,用电吹风局部加入反应,使溶液持续平稳的回流1小时,冷却至室温,得到相应的格式试剂。将2,7-二溴-9H-芴-9-酮(6.5g,19.3mmol)加入50mL无水的THF中,把之前制备的格式试剂用注射器转移到上述溶液中,溶液升温至60-85℃搅拌过夜。溶液冷却至室温,倒入50mL饱和氯化铵溶液中,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物1;
制备化合物2:250mL双口烧瓶加入二氯甲烷溶(150ml)和苯并二噻吩过量,将化合物1和催化剂BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到淡绿色油状产物,即化合物2。
制备化合物4:化合物2、叔醇硼酸、Pd(PPh3)4加入150mL圆底烧瓶,K2CO3和甲苯在使用前分别通入氮气30min以除去溶液中的氧气。将上述溶液分别注入圆底烧瓶中,溶液升温至100℃,回流24小时。溶液冷却至室温,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到浅绿色粉末固体,即化合物4。
制备化合物5:250mL双口烧瓶加入化合物4的二氯甲烷溶液(150mL),将BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入20mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物五。制备格子化合物:将上一步反应物与苯硼酸加入反应瓶,苯硼酸保持过量,加入催化剂经典铃木反应生成产物,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到淡黄色固体产物,即为格子。
实施例3
纳米格子分子结构为:
合成路线为:
制备化合物1:镁条(0.6g,25.5mmol)加入20mL的无水THF,氮气保护,加入几粒碘,将溶解有1-溴-4-(甲氧基)苯(5.4g,10-20mmol)的20mL无水THF逐滴加入上述溶液,用电吹风局部加入反应,使溶液持续平稳的回流1小时,冷却至室温,得到相应的格式试剂。将2-溴-4,5-二氮杂-9-芴酮(6.3g,10-20mmol)加入50mL无水的THF中,把之前制备的格式试剂用注射器转移到上述溶液中,溶液升温至60-85℃搅拌过夜。溶液冷却至室温,倒入50mL饱和氯化铵溶液中,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物1;
制备化合物2:250mL双口烧瓶加入二氯甲烷溶(150ml)和过量苯并二噻吩,将化合物1和催化剂BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到淡绿色油状产物,即化合物2。
制备化合物4:化合物2、叔醇硼酸、Pd(PPh3)4加入150mL圆底烧瓶,K2CO3和甲苯在使用前分别通入氮气30min以除去溶液中的氧气。将上述溶液分别注入圆底烧瓶中,溶液升温至100℃,回流24小时。溶液冷却至室温,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到浅绿色粉末固体,即化合物4。
制备化合物5:250mL双口烧瓶加入化合物4的二氯甲烷溶液(150mL),将BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入20mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物五。
实施例4
纳米格子分子结构为:
合成路线为:
制备步骤为:
制备化合物1:镁条(0.6g,25.5mmol)加入20mL的无水THF,氮气保护,加入几粒碘,将溶解有1-溴-4-(叔丁基)苯(5.4g,10-20mmol)的20mL无水THF逐滴加入上述溶液,用电吹风局部加入反应,使溶液持续平稳的回流1小时,冷却至室温,得到相应的格式试剂。将2-溴-9H-芴-9-酮(6g,10-20mmol)加入50mL无水的THF中,把之前制备的格式试剂用注射器转移到上述溶液中,溶液升温至60-85℃搅拌过夜。溶液冷却至室温,倒入50mL饱和氯化铵溶液中,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物1;
制备化合物2:250mL双口烧瓶加入二氯甲烷溶(150ml)和过量的苯丙二呋喃,将化合物1和催化剂BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到淡绿色油状产物,即化合物2。
制备化合物4:化合物2、叔醇硼酸、Pd(PPh3)4加入150mL圆底烧瓶,K2CO3和甲苯在使用前分别通入氮气30min以除去溶液中的氧气。将上述溶液分别注入圆底烧瓶中,溶液升温至100℃,回流24小时。溶液冷却至室温,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到浅绿色粉末固体,即化合物4。
制备化合物5:250mL双口烧瓶加入化合物4的二氯甲烷溶液(150mL),将BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入20mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物五。
实施例5
纳米格子分子结构为:
合成路线为:
制备步骤为:
制备化合物1:镁条(0.6g,25.5mmol)加入20mL的无水THF,氮气保护,加入几粒碘,将溶解有1-溴-4-(辛氧基)苯(5g,10-20mmol)的20mL无水THF逐滴加入上述溶液,用电吹风局部加入反应,使溶液持续平稳的回流1小时,冷却至室温,得到相应的格式试剂。将2-溴-9H-芴-9-酮(6.5g,19.3mmol)加入50mL无水的THF中,把之前制备的格式试剂用注射器转移到上述溶液中,溶液升温至60-85℃搅拌过夜。溶液冷却至室温,倒入50mL饱和氯化铵溶液中,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物1;
制备化合物2:250mL双口烧瓶加入二氯甲烷溶(150ml)和过量苯丙二硒吩,将化合物1和催化剂BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到淡绿色油状产物,即化合物2。
制备化合物4:化合物2、叔醇硼酸、Pd(PPh3)4加入150mL圆底烧瓶,K2CO3和甲苯在使用前分别通入氮气30min以除去溶液中的氧气。将上述溶液分别注入圆底烧瓶中,溶液升温至100℃,回流24小时。溶液冷却至室温,倒入80mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到浅绿色粉末固体,即化合物4。
制备化合物5:250mL双口烧瓶加入化合物4的二氯甲烷溶液(150mL),将BF3.Et2O的二氯甲烷(50mL)溶液置于恒压滴液漏斗中逐滴加入上述溶液。滴加完毕后,待TLC板监控反应完毕,倒入20mL去离子水,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到化合物五。制备格子化合物:将上一步反应物与苯硼酸加入反应瓶,苯硼酸保持过量,加入催化剂经典铃木反应生成产物,用二氯甲烷萃取,合并有机层用水和饱和食盐水洗涤,之后用无水硫酸镁干燥,过滤,用旋蒸仪除去溶剂,将粗产物用层析柱色谱分离(洗脱剂为石油醚,二氯甲烷),得到淡黄色固体产物,即为格子。
有机纳米格子分子材料还可以为:
对实施例1测试方法包括1H核磁共振测试:德国Bruker-400 MHz型核磁共振仪上测试,测试方法是以四甲基硅烷(TMS)为内标,氘代试剂为测试溶剂,氢谱的测试浓度一般为5mg/mL,测试过程中要求的氘代试剂体积为0.4mL左右。测定结果如图1所示
对实施例1测试方法包括基质辅助激光解离飞行时间质谱仪(MALDI-TOF MS):在BRUKER AUTOFLEX SPEED的质谱仪上借助基质进行测试,小分子化合物常用的测试模式为线性模式,测定结果如图2所示;
对实施例1得到的纳米格子分子材料的电化学测定,在上海辰华仪器公司的CHI660D型电化学工作站测得,采用三电极体系Pt片电极作为工作电极,铂丝为辅助电极,甘汞电极为参比电极。测试时以0.1M四丁基氟硼酸胺(Bu4NPF6)的乙腈溶液为电解质溶液,二茂铁作为内标(0.40V),电解质溶液使用前通入氮气20分钟除去氧气,将聚合物的氯仿溶液滴涂在工作Pt电极上成膜,测试时扫描速度为50mV/s。根据扫描的过程中会产生氧化峰和还原峰,通过分析出现的氧化峰或还原峰的起始氧化/还原电位,进而计算出HOMO能级和LUMO能级。电化学测定结果如图3所示。
将实施例得到的纳米格子分子材料与现有技术中的几种材料进行对比,结果如表所示:
其中,表中,SF-U、BDT-U、SF-Grid、BDT-Grid的结构通式分别为:
由表可见,实施例1得到的纳米格子分子的HOMO、LUMO能级分别为-6.37eV,-1.86eV。通过表格不难看出,在合成这一环状结构之后,性能得到了明显提高,稳定性也得到了显著提高,理论上闭环产生共轭平面,方便电子流通,进一步证明了结构在器件物理层面的提升。
本发明的有机纳米格子分子材料可以制备成薄膜,用于制作有机场效应晶体管存储器的电荷存储层。
含有本发明中的有机纳米格子分子材料的薄膜的制备步骤如下:
步骤1,配置纳米格子分子溶液,溶液浓度为3mg/mL,溶剂为未经额外除水处理的氯仿(CHCl3)或甲苯静置24h,使其分散均匀;
步骤2,将表面有300nm厚度的二氧化硅的重掺杂的硅依次用丙酮、乙醇、去离子水各超声清洗15min,超声频率为100KHz,再用高纯氮气将基片表面液体吹干以保证基片表面洁净,之后放入120℃的烘箱中烘干;
步骤3在步骤2中干燥好的基片放置于紫外臭氧机中处理3min;
步骤4,在空气中,空气湿度为40%,将步骤,3处理好的基片表面旋涂步骤1配置好的溶液,旋涂转速为3000r/min,旋涂时间30s,薄膜厚度控制在20nm左右;在空气中,将旋涂好的基片放在80℃的干燥箱中干燥退火30min,除去溶剂,得到薄膜。
有机场效应晶体管存储器的制备过程为:
在有机纳米格子分子材料薄膜表面真空蒸镀有机半导体层并五苯,蒸镀速率为真空度控制在5×10-4pa以下,控制蒸镀薄膜厚度为50nm,制备的多孔半导体层,在制备的薄膜表面加上掩模板进行图案化处理,真空蒸镀金充当源漏电极,蒸镀速率控制厚度在60~80nm;掩模板的沟道宽度为2000μm,长度为100μm。
将基于实施例1的纳米格子分子的有机场效应晶体管存储器制备好后,其电学性能由吉时利4200半导体分析仪进行表征,数据处理绘制成的转移特性曲线如图4所示,迁移率达到0.34cm2/Vs,开关比达2×106。
图5为基于实施例1的纳米格子分子的有机场效应晶体管存储器测试的输出特性曲线,在不同的栅极电压(0,-8,-16,-24,-32,-40V)下,源漏电流和源漏电压的变化关系,分析图5可以得出器件具有良好的场效应。
图6为基于实施例1的纳米格子分子的有机场效应晶体管存储器测试的负向存储窗口曲线,从图中可以看出,器件的负向写入窗口很大,达到22.51V的存储窗口,写入速度很快,仅仅用了20ms,而且可完全擦除回初始位置,体现器件具有很好存储容量和响应速度。
Claims (6)
3.根据权利要求2所述一种有机纳米格子分子材料,其特征在于:所述有机纳米格子分子材料的制备方法为:基于Suzuki-Miyaura反应,Friedel-Crafts反应,从二-溴芴酮出发,通过格式反应合成叔醇产物,通过Friedel-Crafts反应合成有机纳米格子分子材料。
5.一种有机纳米格子分子薄膜,其特征在于:有机纳米格子分子薄膜是权利要求1中任意一种有机纳米格子分子经过溶解并旋涂到表面洁净的基片上,经过干燥得到。
6.根据权利要求5所述的一种有机纳米格子分子薄膜在有机场效应晶体管存储器中的应用,其特征在于:所述有机纳米格子分子薄膜用于制作有机场效应晶体管存储器的电荷存储层。
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