CN114864709A - 一种光电探测器及其制备方法和应用 - Google Patents
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Abstract
本发明公开了一种光电探测器及其制备方法和应用。本发明的光电探测器的组成包括衬底、第一金属电极、第二金属电极、Nb掺杂的MoS2薄膜和GaN纳米线层，第一金属电极、第二金属电极和Nb掺杂的MoS2薄膜设置在衬底的同一面，Nb掺杂的MoS2薄膜与第一金属电极形成欧姆接触，GaN纳米线层与第二金属电极形成欧姆接触，GaN纳米线层与Nb掺杂的MoS2薄膜接触。本发明的光电探测器具有响应度高、响应速度快、宽光谱响应、稳定性优异等优点，且其制备过程简单、安全环保，适合进行大规模工业化应用。
Description
技术领域
本发明涉及半导体器件技术领域，具体涉及一种光电探测器及其制备方法和应用。
背景技术
近年来，以氮化镓(GaN)为代表的III族氮化物广泛应用在发光二极管、光电探测器、高电子迁移率晶体管等电子和光电领域。随着器件向着小型化、高度集成化发展，具有优异光电特性的1D GaN纳米材料在紫外光探测方面展现出巨大的应用潜力。然而，由于1DGaN纳米材料内部无电场存在，光生电子-空穴对的分离效率非常低，导致器件的响应速度非常慢，难以满足高速元器件和系统开发的需求。此外，光探测具有多功能、宽光谱响应的发展趋势，而传统的GaN基探测器存在响应度低、响应速度慢、响应光谱有限、制备过程复杂、制备过程中会产生有害副产物等问题，难以满足日益增长的实际应用需求。
因此，开发一种具备高响应度、快响应速度、宽光谱响应、稳定性优异、制备过程简单等优点的光电探测器具有十分重要的意义。
发明内容
本发明的目的在于提供一种光电探测器及其制备方法和应用。
本发明所采取的技术方案是：
一种光电探测器，其组成包括衬底、第一金属电极、第二金属电极、Nb掺杂的MoS2薄膜和GaN纳米线层；所述第一金属电极、第二金属电极和Nb掺杂的MoS2薄膜设置在衬底的同一面；所述Nb掺杂的MoS2薄膜与第一金属电极形成欧姆接触；所述GaN纳米线层与第二金属电极形成欧姆接触；所述GaN纳米线层与Nb掺杂的MoS2薄膜接触。
优选的，所述衬底为SiO2/Si衬底、蓝宝石衬底、碳化硅衬底中的一种。
优选的，所述第一金属电极的组成包括Ti层和Au层。
进一步优选的，所述第一金属电极的组成包括厚度10nm～20nm的Ti层和厚度20nm～30nm的Au层。
优选的，所述第二金属电极的组成包括Ti层和Au层。
进一步优选的，所述第二金属电极的组成包括厚度10nm～20nm的Ti层和厚度20nm～30nm的Au层。
优选的，所述Nb掺杂的MoS2薄膜的厚度为5nm～10nm。
优选的，所述GaN纳米线层中的GaN纳米线的直径为200nm～300nm。
上述光电探测器的制备方法包括以下步骤：
1)将MoO3和S作为前驱体蒸镀在含Nb层的SiO2/Si衬底上，形成Nb掺杂的MoS2薄膜，并将Ga和NH3作为前驱体蒸镀在含Au层的蓝宝石衬底上，形成GaN纳米线层；
2)通过光刻、电子束蒸发和剥离在衬底上制备第一金属电极和第二金属电极；
3)将Nb掺杂的MoS2薄膜从含Nb层的SiO2/Si衬底上剥离后粘附在步骤2)的衬底和第一金属电极表面，并将GaN纳米线层从含Au层的蓝宝石衬底上剥离后粘附在Nb掺杂的MoS2薄膜和第二金属电极表面，再进行退火，即得光电探测器。
优选的，步骤3)中采用热释放胶带将Nb掺杂的MoS2薄膜从含Nb层的SiO2/Si衬底上剥离，热释放温度为130℃～160℃，加热时间为3min～5min。
优选的，步骤3)所述粘附采用的胶黏剂为聚二甲基硅氧烷(PDMS)灌封胶。
优选的，步骤3)所述退火在650℃～750℃下进行，退火时间为5min～10min。
一种光电探测装置，其组成包括上述光电探测器。
本发明的有益效果是：本发明的光电探测器具有响应度高、响应速度快、宽光谱响应、稳定性优异等优点，且其制备过程简单、安全环保，适合进行大规模工业化应用。
具体来说：
本发明通过干法转移技术将Nb掺杂的MoS2薄膜与GaN纳米线集成，构建了1D GaN/2DMoS2异质结，实现了高性能、宽光谱响应的光电探测器的制备，1D GaN/2D MoS2集成器件结合了Nb掺杂的MoS2薄膜和GaN纳米线这两者的特性，能够以高响应度和快响应速度探测紫外(365nm)和可见光(520nm)光，且具有优异的稳定性，此外，该光电探测器在制备过程中无复杂操作和有害副产物产生，整个过程无水和有机物污染，避免了制备过程对器件的损伤。
附图说明
图1为实施例1的光电探测器的结构示意图。
附图标识说明：10、SiO2/Si衬底；20、第一金属电极；30、第二金属电极；40、Nb掺杂的MoS2薄膜；50、GaN纳米线层。
图2为实施例1的步骤1)中形成的Nb掺杂的MoS2薄膜的光学显微镜照片。
图3为实施例1的步骤2)中形成的GaN纳米线层的SEM图。
图4为实施例1的步骤5)中构建的MoS2/GaN的异质结的光学显微镜照片。
图5为实施例1的光电探测器在黑暗环境、可见光和紫外光照射下的I-V曲线。
图6为实施例1的光电探测器在不同波长的脉冲光源照射下的光电响应曲线。
具体实施方式
下面结合具体实施例对本发明作进一步的解释和说明。
实施例1：
一种光电探测器(结构示意图如图1所示)，其组成包括SiO2/Si衬底10、第一金属电极20、第二金属电极30、Nb掺杂的MoS2薄膜40和GaN纳米线层50；第一金属电极20、第二金属电极30和Nb掺杂的MoS2薄膜40设置在SiO2/Si衬底10的同一面；Nb掺杂的MoS2薄膜40与第一金属电极20形成欧姆接触；GaN纳米线层50与第二金属电极30形成欧姆接触；GaN纳米线层50与Nb掺杂的MoS2薄膜40接触。
上述光电探测器的制备方法包括以下步骤：
1)通过化学气相沉积法将0.05g的MoO3和0.15g的S粉作为Mo和S元素的前驱体蒸镀在含0.5nm厚的Nb层的SiO2/Si衬底上，850℃下生长15min，冷却至室温，形成Nb掺杂的MoS2薄膜(厚度为5nm)；
2)通过化学气相沉积法将0.01g的金属Ga和100sccm的NH3作为Ga和N元素的前驱体蒸镀在含3nm厚的Au层的蓝宝石衬底上，1100℃下生长30min，冷却至室温，形成GaN纳米线层；
3)通过光刻、电子束蒸发和Lift-off(揭开-剥离)工艺在SiO2/Si衬底上制备第一金属电极和第二金属电极，第一金属电极和第二金属电极均是由厚度10nm的Ti层和厚度20nm的Au层构成，第一金属电极和第二金属电极之间的间距为3μm；
4)将热释放胶带紧贴Nb掺杂的MoS2薄膜2h，通过微机械臂将热释放胶带缓慢剥离，再130℃下加热3min将剥离的Nb掺杂的MoS2薄膜释放到PDMS灌封胶上，再通过微型转移平台(设置平台温度为130℃)转移到第一金属电极和SiO2/Si衬底上；
5)将GaN纳米线层用刮刀从蓝宝石衬底上刮落在蓝膜上，反复黏贴多次来分散GaN纳米线，用PDMS灌封胶粘取GaN纳米线，再通过微型转移平台(设置平台温度为130℃)转移到第二金属电极和Nb掺杂的MoS2薄膜上，构建MoS2/GaN的异质结，再650℃下退火5min，即得光电探测器。
实施例2：
一种光电探测器(结构和实施例1的光电探测器相同)，其制备方法包括以下步骤：
1)通过化学气相沉积法将0.05g的MoO3和0.15g的S粉作为Mo和S元素的前驱体蒸镀在含0.5nm厚的Nb层的SiO2/Si衬底上，850℃下生长15min，冷却至室温，形成Nb掺杂的MoS2薄膜(厚度为7nm)；
2)通过化学气相沉积法将0.01g的金属Ga和100sccm的NH3作为Ga和N元素的前驱体蒸镀在含3nm厚的Au层的蓝宝石衬底上，1100℃下生长30min，冷却至室温，形成GaN纳米线层；
3)通过光刻、电子束蒸发和Lift-off(揭开-剥离)工艺在SiO2/Si衬底上制备第一金属电极和第二金属电极，第一金属电极和第二金属电极均是由厚度15nm的Ti层和厚度25nm的Au层构成，第一金属电极和第二金属电极之间的间距为3μm；
4)将热释放胶带紧贴Nb掺杂的MoS2薄膜2h，通过微机械臂将热释放胶带缓慢剥离，再140℃下加热4min将剥离的Nb掺杂的MoS2薄膜释放到PDMS灌封胶上，再通过微型转移平台(设置平台温度为140℃)转移到第一金属电极和SiO2/Si衬底上；
5)将GaN纳米线层用刮刀从蓝宝石衬底上刮落在蓝膜上，反复黏贴多次来分散GaN纳米线，用PDMS灌封胶粘取GaN纳米线，再通过微型转移平台(设置平台温度为140℃)转移到第二金属电极和Nb掺杂的MoS2薄膜上，构建MoS2/GaN的异质结，再700℃下退火8min，即得光电探测器。
实施例3：
一种光电探测器(结构和实施例1的光电探测器相同)，其制备方法包括以下步骤：
1)通过化学气相沉积法将0.05g的MoO3和0.15g的S粉作为Mo和S元素的前驱体蒸镀在含0.5nm厚的Nb层的SiO2/Si衬底上，850℃下生长15min，冷却至室温，形成Nb掺杂的MoS2薄膜(厚度为10nm)；
2)通过化学气相沉积法将0.01g的金属Ga和100sccm的NH3作为Ga和N元素的前驱体蒸镀在含3nm厚的Au层的蓝宝石衬底上，1100℃下生长30min，冷却至室温，形成GaN纳米线层；
3)通过光刻、电子束蒸发和Lift-off(揭开-剥离)工艺在SiO2/Si衬底上制备第一金属电极和第二金属电极，第一金属电极和第二金属电极均是由厚度20nm的Ti层和厚度30nm的Au层构成，第一金属电极和第二金属电极之间的间距为3μm；
4)将热释放胶带紧贴Nb掺杂的MoS2薄膜2h，通过微机械臂将热释放胶带缓慢剥离，再150℃下加热5min将剥离的Nb掺杂的MoS2薄膜释放到PDMS灌封胶上，再通过微型转移平台(设置平台温度为150℃)转移到第一金属电极和SiO2/Si衬底上；
5)将GaN纳米线层用刮刀从蓝宝石衬底上刮落在蓝膜上，反复黏贴多次来分散GaN纳米线，用PDMS灌封胶粘取GaN纳米线，再通过微型转移平台(设置平台温度为150℃)转移到第二金属电极和Nb掺杂的MoS2薄膜上，构建MoS2/GaN的异质结，再750℃下退火10min，即得光电探测器。
性能测试：
1)实施例1的步骤1)中形成的Nb掺杂的MoS2薄膜的光学显微镜照片如图2所示。
由图2可知：Nb掺杂的MoS2薄膜厚度均匀，生长连续。
2)实施例1的步骤2)中形成的GaN纳米线层的扫描电镜(SEM)图如图3所示。
由图3可知：GaN纳米线的直径为200nm～300nm。
3)实施例1的步骤5)中构建的MoS2/GaN的异质结的光学显微镜照片如图4所示。
由图4可知：本实施例成功制备了MoS2/GaN异质结型光电探测器。
4)实施例1的光电探测器在黑暗环境、可见光(波长520nm)和紫外光(波长365nm)照射下的I-V曲线如图5所示。
由图5可知：实施例1的光电探测器能够对紫外光和可见光响应。
5)实施例1的光电探测器在不同波长的脉冲光源照射下的光电响应曲线如图6所示。
由图6可知：实施例1的光电探测器在紫外和可见光下表现出良好的光响应特性。
经测试(测试方法同实施例1)，实施例2和实施例3的光电探测器的性能与实施例1的光电探测器十分接近。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (10)
1.一种光电探测器，其特征在于，组成包括衬底、第一金属电极、第二金属电极、Nb掺杂的MoS2薄膜和GaN纳米线层；所述第一金属电极、第二金属电极和Nb掺杂的MoS2薄膜设置在衬底的同一面；所述Nb掺杂的MoS2薄膜与第一金属电极形成欧姆接触；所述GaN纳米线层与第二金属电极形成欧姆接触；所述GaN纳米线层与Nb掺杂的MoS2薄膜接触。
2.根据权利要求1所述的光电探测器，其特征在于：所述衬底为SiO2/Si衬底、蓝宝石衬底、碳化硅衬底中的一种。
3.根据权利要求1所述的光电探测器，其特征在于：所述第一金属电极的组成包括Ti层和Au层；所述第二金属电极的组成包括Ti层和Au层。
4.根据权利要求1～3中任意一项所述的光电探测器，其特征在于：所述Nb掺杂的MoS2薄膜的厚度为5nm～10nm。
5.根据权利要求1～3中任意一项所述的光电探测器，其特征在于：所述GaN纳米线层中的GaN纳米线的直径为200nm～300nm。
6.权利要求1～5中任意一项所述的光电探测器的制备方法，其特征在于，包括以下步骤：
1)将MoO3和S作为前驱体蒸镀在含Nb层的SiO2/Si衬底上，形成Nb掺杂的MoS2薄膜，并将Ga和NH3作为前驱体蒸镀在含Au层的蓝宝石衬底上，形成GaN纳米线层；
2)通过光刻、电子束蒸发和剥离在衬底上制备第一金属电极和第二金属电极；
3)将Nb掺杂的MoS2薄膜从含Nb层的SiO2/Si衬底上剥离后粘附在步骤2)的衬底和第一金属电极表面，并将GaN纳米线层从含Au层的蓝宝石衬底上剥离后粘附在Nb掺杂的MoS2薄膜和第二金属电极表面，再进行退火，即得光电探测器。
7.根据权利要求6所述的光电探测器的制备方法，其特征在于：步骤3)中采用热释放胶带将Nb掺杂的MoS2薄膜从含Nb层的SiO2/Si衬底上剥离，热释放温度为130℃～160℃，加热时间为3min～5min。
8.根据权利要求6或7所述的光电探测器的制备方法，其特征在于：步骤3)所述粘附采用的胶黏剂为聚二甲基硅氧烷灌封胶。
9.根据权利要求6或7所述的光电探测器的制备方法，其特征在于：步骤3)所述退火在650℃～750℃下进行，退火时间为5min～10min。
10.一种光电探测装置，其特征在于，组成包括权利要求1～5中任意一项所述的光电探测器。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116519175A (zh) * | 2023-07-03 | 2023-08-01 | 南京邮电大学 | 一种基于Si衬底生长GaN基纳米线的柔性器件及制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690317A (zh) * | 2019-10-31 | 2020-01-14 | 华南理工大学 | 一种基于单层MoS2薄膜/GaN纳米柱阵列的自供电紫外探测器及其制备方法 |
| CN110993703A (zh) * | 2019-11-27 | 2020-04-10 | 中国科学院金属研究所 | 一种GaN／MoS2二维范德华异质结光电探测器及其制备方法 |
| CN111398367A (zh) * | 2020-04-30 | 2020-07-10 | 中国人民解放军陆军防化学院 | 一种采用铌改善二硫化钼气体传感器的方法及传感设备 |
| US20210210648A1 (en) * | 2018-09-06 | 2021-07-08 | Yeda Research And Development Co. Ltd. | Photovoltaic devices based on guided nanowire arrays |
| JP2022060047A (ja) * | 2020-10-02 | 2022-04-14 | 伯仁 ▲呉▼ | ディスプレイパネルおよびディスプレイパネル作製方法 |
-
2022
- 2022-04-18 CN CN202210402154.8A patent/CN114864709A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210210648A1 (en) * | 2018-09-06 | 2021-07-08 | Yeda Research And Development Co. Ltd. | Photovoltaic devices based on guided nanowire arrays |
| CN110690317A (zh) * | 2019-10-31 | 2020-01-14 | 华南理工大学 | 一种基于单层MoS2薄膜/GaN纳米柱阵列的自供电紫外探测器及其制备方法 |
| CN110993703A (zh) * | 2019-11-27 | 2020-04-10 | 中国科学院金属研究所 | 一种GaN／MoS2二维范德华异质结光电探测器及其制备方法 |
| CN111398367A (zh) * | 2020-04-30 | 2020-07-10 | 中国人民解放军陆军防化学院 | 一种采用铌改善二硫化钼气体传感器的方法及传感设备 |
| JP2022060047A (ja) * | 2020-10-02 | 2022-04-14 | 伯仁 ▲呉▼ | ディスプレイパネルおよびディスプレイパネル作製方法 |
Non-Patent Citations (2)
| Title |
|---|
| EDWIN W. LEE: "Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors", APL MATERIALS, vol. 9, no. 12, pages 35 - 36 * |
| 李保理;庄惠照;薛成山;张士英;: "氨化Ga_2O_3/Nb薄膜制备GaN纳米线", 功能材料, no. 01 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116519175A (zh) * | 2023-07-03 | 2023-08-01 | 南京邮电大学 | 一种基于Si衬底生长GaN基纳米线的柔性器件及制备方法 |
| CN116519175B (zh) * | 2023-07-03 | 2023-11-10 | 南京邮电大学 | 一种基于Si衬底生长GaN基纳米线的柔性器件及制备方法 |
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