CN114864703A - 具有p型金刚石倾斜台面结终端的氧化镓肖特基二极管 - Google Patents
具有p型金刚石倾斜台面结终端的氧化镓肖特基二极管 Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims abstract description 69
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims abstract description 75
- 150000002500 ions Chemical class 0.000 claims description 27
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
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- 229910052737 gold Inorganic materials 0.000 claims description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
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- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 238000011084 recovery Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明的一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管,其结构包括:自上而下包括阳极金属、P型金刚石层、n‑‑Ga2O3漂移层、n+‑Ga2O3层、阴极金属。本发明采用P型金刚石作为P型区域避免选择区域形成P型氧化镓面临的难题,同时在优化倾斜角度的台面上生长优化延伸长度的P型金刚石形成结终端结构,终端处的PN结使器件在反向偏置下具有更平滑的等电位轮廓、更小的边缘电场,有效缓解边缘电场集中。本发明利用金刚石的高热导率促进器件散热,可以弥补氧化镓热导率低、散热能力差的劣势。
Description
技术领域
本发明属于半导体技术领域,具体涉及具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管。
背景技术
Ga2O3是一种新兴的半导体材料,鉴于Ga2O3的Baliga优值(FOM)远远超过了GaN和4H-SiC的优值(FOM),其在实现高性能电子器件方面有着较大优势。同时Ga2O3的临界击穿场强高达8MV/cm,室温下电子迁移率约为200cm2/Vs,这些特性使Ga2O3成为下一代电力电子器件的优秀候选材料。
垂直Ga2O3肖特基二极管(SBD)可以通过增加漂移层厚度和减少漂移层掺杂浓度来增加器件的击穿电压,不会增加器件的横向尺寸导致晶圆利用率的降低。SBD一般作为单极器件,反向恢复时间短,具有优异的频率特性,但是击穿主要发生在电场分布集中的肖特基结的边缘,需要有效的终端技术,调节肖特基结处电场分布,提高器件的耐压水平。根据现有终端技术提出的肖特基二极管结构包括:结势垒肖特基二极管(JBS)和混合PIN/肖特基二极管(MPS)。
结势垒肖特基二极管通过在器件中引入P型重掺杂,P+区位于外延层表面同时与阳极金属相连,在有源区以一定的间距规则地排列在一起。P型重掺杂在器件中引入了pn结,pn结产生的势垒为肖特基接触屏蔽了高电场。肖特基接触处较小的电场将导致较小的肖特基势垒降低和较弱的场发射效应,从而获得低漏电流和高击穿电压。在实际制备器件的过程中,通常使用相同的阳极肖特基金属来形成与P型区域和N型区域的接触,没有任何退火过程,这简化了器件的制造过程。但在设计器件时,P型区域之间的距离必须适当,以避免正向偏置时N型区域被完全耗尽。同时P型Ga2O3材料难以制备,这使得Ga2O3 JBS器件的实现成为一大难题。
混合PIN/肖特基二极管同样是通过引入pn结来调节器件肖特基结处的电场分布。但MPS P型区域和阳极金属之间为欧姆接触,这是MPS与JBS的不同之处。与JBS器件相比,MPS整流器表现出更好的浪涌电流能力。但是由于少数载流子通过欧姆接触注入,导致MPS的频率响应较慢。同时Ga2O3 JBS器件同样存在P型Ga2O3材料制备困难的问题。
发明内容
本发明的目的在于克服背景技术存在的问题,提供一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管。本发明要解决的技术问题通过以下技术方案实现:
第一方面,本发明提供的一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管包括:
自上而下包括阳极金属、P型金刚石层、n--Ga2O3漂移层、n+-Ga2O3层以及阴极金属;
其中,n--Ga2O3层自上而下呈梯形结构,梯形结构的倾斜角度θ的范围为90°~150°,P型金刚石层在梯形结构两侧,并部分覆盖在梯形结构的n--Ga2O3层上以及n--Ga2O3层倾斜台面上,P型金刚石层在倾斜台面上可延伸长度为n--Ga2O3层斜面长度的0~3/4倍,阳极金属位于n--Ga2O3层上中间未被P型金刚石层覆盖部分,且超出P型金刚石层并向两侧延伸部分覆盖两侧的P型金刚石层。
其中,P型金刚石层的生长厚度为30~100nm,掺杂离子为硼离子,掺杂浓度范围为1×1018~1×1020cm-3。
其中,n--Ga2O3层的生长厚度为5~15μm,掺杂离子为Si离子或Sn离子,掺杂浓度范围为1×1016~1×1018cm-3。
其中,n+-Ga2O3衬底厚度为300~650μm,掺杂离子为Si离子或Sn离子,掺杂浓度范围为1×1018~1×1020cm-3。
其中,阳极金属层包括:Ni/Au或Pt/Au;阴极金属层包括:Ti/Au或Ti/Al/Ni/Au;
其中,阳极金属为Ni/Au组合或Pt/Au组合,第一层金属Ni或Pt的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属为Ti/Au组合或Ti/Al/Ni/Au组合,阴极金属若为Ti/Au组合,第一层金属Ti的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属若为Ti/Al/Ni/Au组合,第一层金属Ti的生长厚度为10~200nm,第二层金属Al生长厚度为10~200nm,第三层金属Ni的生长厚度为10~200nm,第四层金属Au的生长厚度为50~400nm。
第二方面,本发明提供的一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管的制作方法包括:
步骤1:获取n+-Ga2O3衬底;
步骤2:对n+-Ga2O3衬底进行标准清洗;
步骤3:在n+-Ga2O3衬底上外延生长低掺杂n--Ga2O3薄膜;
步骤4:将外延生长低掺杂n--Ga2O3薄膜的衬底依次进行有机溶剂和去离子水清洗后,放入体积比为HF:H2O=1:1的混合溶液中腐蚀40~100s,用流动的去离子水清洗并用高纯氮气吹干;
步骤5:采用ICP设备在步骤4所形成的结构上,刻蚀氧化镓斜面台面;
步骤6:利用MPCVD方法,在低掺杂的n--Ga2O3薄膜上制备P型金刚石层;
步骤7:在硼掺杂P型金刚石上涂抹光刻胶,光刻出肖特基接触区域和P型金刚石在倾斜台面上的多余部分,并去除刻蚀完成后的光刻胶;
步骤8:在步骤7所形成的结构放置在电子束蒸发台中,在n+-Ga2O3衬底背面蒸发Ti/Au金属组合或Ti/Al/Ni/Au金属组合作为阴极;
步骤9:在蒸发阴极金属之后,将n+-Ga2O3衬底在450~600℃的N2环境中进行40~80s快速热退火,使阴极金属与重掺杂氧化镓之间形成欧姆接触作为阴极;
步骤10:在低掺杂n--Ga2O3薄膜上先旋涂光刻胶,光刻后在肖特基接触区域和其周围部分P型金刚石上方蒸发Ni/Au金属组合或Pt/Au金属组合作为阳极。
可选的,步骤3中,外延生长低掺杂n--Ga2O3薄膜工作环境为:
在三甲基镓TMGa流量为3.0×10-6~1.2×10-5mol/min,O2流量为1.0×10-2~4.0×10-2mol/min,温度为50~120℃,压强为500Pa的MOCVD设备中。
可选的,步骤5的刻蚀条件为:
上电极功率200~350W/下电极功率为40~60W,腔室压力为4~20mTorr,气体流量Cl2为30~60sccm,温度为10~50℃。
本发明的有益效果:
1.本发明采用P型金刚石作为P型区域规避P型氧化镓制备困难的难题。同时利用金刚石的高热导率促进器件散热,弥补氧化镓热导率低、散热能力差的劣势。以下将结合附图及实施例对本发明做进一步详细说明。
2.本发明提供的肖特基二极管采用倾斜台面结终端结构,通过优化倾斜台面角度θ和P型金刚石在倾斜台面上的延伸长度使器件具有更平滑的等电位轮廓、更小的边缘电场,提升肖特基二极管的击穿电压。
附图说明
图1为本发明一种具有P型金刚石倾斜台面结终端结构的肖特基二极管的剖面结构示意图;
图2为本发明提供的制备一种具有P型金刚石倾斜台面结终端结构的肖特基二极管的流程图;
图3为本发明提供的外延生长低掺杂n--Ga2O3薄膜后的结构图;
图4为本发明提供的刻蚀氧化镓斜面台面的结构图;
图5为本发明提供的制备出硼掺杂P型金刚石层的结构图;
图6为本发明提供的在P型金刚石层刻蚀肖特基接触区域以及多余部分的结构图;
图7为本发明提供的最终形成具有P型金刚石倾斜台面结终端结构的肖特基二极管示意图。
具体实施方式
下面结合具体实施例对本发明做进一步详细的描述,但本发明的实施方式不限于此。
如图1所示,本发明提供的一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管包括:
自上而下包括阳极金属、P型金刚石层、n--Ga2O3层、n+-Ga2O3层以及阴极金属;
其中,n--Ga2O3层、n+-Ga2O3层以及阴极金属层自上而下呈梯形结构,梯形结构的倾斜角度θ的范围为90°~150°,P型金刚石层在梯形结构两侧,并部分覆盖在梯形结构的n--Ga2O3层上以及n--Ga2O3层倾斜台面上可延伸长度为n--Ga2O3层斜面长度0~3/4倍,阳极金属层位于n--Ga2O3层上中间未被P型金刚石层覆盖部分,且超出P型金刚石层并向两侧延伸部分覆盖两侧的P型金刚石层。
其中,P型金刚石层的生长厚度范围为30~100nm。n--Ga2O3层的生长厚度范围为5~15μm,掺杂离子为Si离子或Sn离子,掺杂浓度范围为1×1016~1×1018cm-3。n+-Ga2O3衬底厚度范围为300~650μm。掺杂离子为Si离子或Sn离子,掺杂浓度范围为1×1018~1×1020cm-3。阳极金属层为Ni/Au或Pt/Au组合;阴极金属层为Ti/Au或Ti/Al/Ni/Au金属组合。阳极金属为Ni/Au组合或Pt/Au组合,第一层金属Ni或Pt的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属为Ti/Au组合或Ti/Al/Ni/Au组合,阴极金属若为Ti/Au组合,第一层金属Ti的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属若为Ti/Al/Ni/Au组合,第一层金属Ti的生长厚度为10~200nm,第二层金属Al生长厚度为10~200nm,第三层金属Ni的生长厚度为10~200nm,第四层金属Au的生长厚度为50~400nm。本发明还可以使用其它金属组合,本发明对此不作限制。
如图2所示,本发明提供的一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管的制作方法包括:
步骤1:获取厚度为300~650μm的n+-Ga2O3衬底,掺杂离子为Si离子或Sn离子,掺杂浓度为1×1018~1×1020cm-3。
步骤2:对n+-Ga2O3衬底进行标准清洗;
步骤3:在n+-Ga2O3衬底上外延生长厚度为5~15μm的低掺杂n--Ga2O3薄膜,掺杂离子为Si离子或Sn离子,掺杂浓度为1×1016~1×1018cm-3;
其中,步骤3的制作条件为在三甲基镓TMGa流量为3.0×10-6~1.2×10-5mol/min,O2流量为1.0×10-2~4.0×10-2mol/min,温度为50~120℃,压强为500Pa的MOCVD设备中。
参考图3,将清洗后的衬底放入MOCVD设备中,在三甲基镓TMGa流量为3.0×10-6~1.2×10-5mol/min,O2流量为1.0×10-2~4.0×10-2mol/min,温度为50~120℃,压强为500Pa的条件下外延生长厚度为5~15μm、掺杂浓度为1×1016~1×1018cm-3的低掺杂n--Ga2O3薄膜。
步骤4:将外延生长低掺杂n--Ga2O3薄膜的衬底依次进行有机溶剂和去离子水清洗后,放入体积比为HF:H2O=1:1的混合溶液中腐蚀40~100s,用流动的去离子水清洗并用高纯氮气吹干;
步骤5:采用ICP设备在步骤4所形成的结构上,刻蚀氧化镓斜面台面;
其中,步骤5的刻蚀条件为:
上电极功率200~350W/下电极功率为40~60W,腔室压力为4~20mTorr,气体流量Cl2为30~60sccm,温度为10~50℃。
参考图4,本步骤可以采用ICP设备,刻蚀氧化镓斜面台面,上电极功率200~350W/下电极功率为40~60W,腔室压力为4~20mTorr,气体流量Cl2为30~60sccm,温度为10~50℃,并去除光刻胶。
步骤6:利用MPCVD方法,在低掺杂的n--Ga2O3薄膜上制备出厚度为30~100nm的P型金刚石层,掺杂离子为硼离子,掺杂浓度范围为1×1018~1×1020cm-3;
参考图5,在低掺杂的n--Ga2O3上制备出硼掺杂P型金刚石层,掺杂浓度为1×1018~1×1020cm-3,厚度为30~100nm。反应的主要气体为CH4、H2和乙硼烷(B2H6),把混合气体通入反映腔体,通过控制气体的流量来控制B2H6的掺杂量制备出硼掺杂P型金刚石层。
步骤7:在硼掺杂P型金刚石上涂抹光刻胶,并光刻出肖特基接触区域和P型金刚石在斜面台面上的多余部分,并去除刻蚀完成的光刻胶;
参考图6,在P型金刚石上涂抹光刻胶并光刻出肖特基接触区域和P型金刚石在斜面台面上的多余部分,上电极功率200~350W/下电极功率为40~60W,腔室压力为4~20mTorr,气体流量O2 20~80sccm,托盘温度10~50℃;刻蚀完成后去除光刻胶。
步骤8:步骤6所形成的结构放置在电子束蒸发台中,在n+-Ga2O3衬底背面蒸发Ti/Au或Ti/Al/Ni/Au金属组合作为阴极;
其中,阴极金属为Ti/Au组合或Ti/Al/Ni/Au组合,阴极金属若为Ti/Au组合,第一层金属Ti的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属若为Ti/Al/Ni/Au组合,第一层金属Ti的生长厚度为10~200nm,第二层金属Al生长厚度为10~200nm,第三层金属Ni的生长厚度为10~200nm,第四层金属Au的生长厚度为50~400nm。
步骤9:在蒸发阴极金属之后,将n+-Ga2O3衬底在450~600℃的N2环境中进行40~80s快速热退火,使阴极金属与重掺杂氧化镓之间形成欧姆接触作为阴极;
步骤10:在低掺杂n--Ga2O3薄膜上先旋涂光刻胶,光刻后在肖特基接触区域和其周围部分P型金刚石上方蒸发Ni/Au或Pt/Au组合作为阳极;
其中,阳极金属为Ni/Au组合或Pt/Au组合,第一层金属Ni或Pt的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;
参考图7,图7为制作完成后的肖特基二极管,在n--Ga2O3层、n+-Ga2O3层以及阴极金属层自上而下呈梯形结构,P型金刚石层在梯形结构两侧,并部分覆盖在梯形结构的n--Ga2O3层上以及n--Ga2O3层倾斜台面上,阳极金属层位于n--Ga2O3层上中间未被P型金刚石层覆盖部分,且超出P型金刚石层并向两侧延伸部分覆盖两侧的P型金刚石层。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。
Claims (8)
1.一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管,其特征在于,包括:
自上而下包括阳极金属、P型金刚石层、n--Ga2O3漂移层、n+-Ga2O3层以及阴极金属;
其中,所述n--Ga2O3层自上而下呈梯形结构,梯形结构的倾斜角度θ的范围为90°~150°,所述P型金刚石层在梯形结构两侧,并部分覆盖在梯形结构的n--Ga2O3层上以及n--Ga2O3层倾斜台面上,P型金刚石层在倾斜台面上可延伸长度为n--Ga2O3层斜面长度的0~3/4倍,所述阳极金属位于n--Ga2O3层上中间未被P型金刚石层覆盖部分,且超出所述P型金刚石层并向两侧延伸部分覆盖两侧的P型金刚石层。
2.根据权利要求1所述的具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管,其特征在于,P型金刚石层的生长厚度为30~100nm,掺杂离子为硼离子,掺杂浓度范围为1×1018~1×1020cm-3。
3.根据权利要求1所述的具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管,其特征在于,n--Ga2O3层的生长厚度为5~15μm,掺杂离子为Si离子或Sn离子,掺杂浓度范围为1×1016~1×1018cm-3。
4.根据权利要求1所述的具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管,其特征在于,n+-Ga2O3衬底厚度为300~650μm,掺杂离子为Si离子或Sn离子,掺杂浓度范围为1×1018~1×1020cm-3。
5.根据权利要求1所述的具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管,其特征在于,阳极金属层包括:Ni/Au或Pt/Au;阴极金属层包括:Ti/Au或Ti/Al/Ni/Au;
其中,阳极金属为Ni/Au组合或Pt/Au组合,第一层金属Ni或Pt的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属为Ti/Au组合或Ti/Al/Ni/Au组合,阴极金属若为Ti/Au组合,第一层金属Ti的生长厚度为10~50nm,第二层金属Au的生长厚度为100~400nm;阴极金属若为Ti/Al/Ni/Au组合,第一层金属Ti的生长厚度为10~200nm,第二层金属Al生长厚度为10~200nm,第三层金属Ni的生长厚度为10~200nm,第四层金属Au的生长厚度为50~400nm。
6.一种具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管的制作方法,其特征在于,包括:
步骤1:获取n+-Ga2O3衬底;
步骤2:对所述n+-Ga2O3衬底进行标准清洗;
步骤3:在所述n+-Ga2O3衬底上外延生长低掺杂n--Ga2O3薄膜;
步骤4:将外延生长低掺杂n--Ga2O3薄膜的衬底依次进行有机溶剂和去离子水清洗后,放入体积比为HF:H2O=1:1的混合溶液中腐蚀40~100s,用流动的去离子水清洗并用高纯氮气吹干;
步骤5:采用ICP设备在步骤4所形成的结构上,刻蚀氧化镓斜面台面;
步骤6:利用MPCVD方法,在低掺杂的n--Ga2O3薄膜上制备P型金刚石层;
步骤7:在硼掺杂P型金刚石上涂抹光刻胶,光刻出肖特基接触区域和P型金刚石在倾斜台面上的多余部分,并去除刻蚀完成后的光刻胶;
步骤8:在步骤7所形成的结构放置在电子束蒸发台中,在n+-Ga2O3衬底背面蒸发Ti/Au金属组合或Ti/Al/Ni/Au金属组合作为阴极;
步骤9:在所述蒸发阴极金属之后,将n+-Ga2O3衬底在450~600℃的N2环境中进行40~80s快速热退火,使阴极金属与重掺杂氧化镓之间形成欧姆接触作为阴极;
步骤10:在低掺杂n--Ga2O3薄膜上所述先旋涂光刻胶,光刻后在肖特基接触区域和其周围部分P型金刚石上方蒸发Ni/Au金属组合或Pt/Au金属组合作为阳极。
7.根据权利要求1所述的具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管的制作方法,其特征在于,所述步骤3中,外延生长低掺杂n--Ga2O3薄膜工作环境为:
在三甲基镓TMGa流量为3.0×10-6~1.2×10-5mol/min,O2流量为1.0×10-2~4.0×10- 2mol/min,温度为50~120℃,压强为500Pa的MOCVD设备中。
8.根据权利要求1所述的具有P型金刚石倾斜台面结终端的氧化镓肖特基二极管的制作方法,其特征在于,所述步骤5的刻蚀条件为:
上电极功率200~350W/下电极功率为40~60W,腔室压力为4~20mTorr,气体流量Cl2为30~60sccm,温度为10~50℃。
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