CN114830338A - 固体摄像元件 - Google Patents

固体摄像元件 Download PDF

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Publication number
CN114830338A
CN114830338A CN202080087479.0A CN202080087479A CN114830338A CN 114830338 A CN114830338 A CN 114830338A CN 202080087479 A CN202080087479 A CN 202080087479A CN 114830338 A CN114830338 A CN 114830338A
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CN
China
Prior art keywords
transistor
pixel
light
solid
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080087479.0A
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English (en)
Chinese (zh)
Inventor
坂田祐辅
田丸雅规
森三佳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN114830338A publication Critical patent/CN114830338A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080087479.0A 2019-12-20 2020-12-15 固体摄像元件 Pending CN114830338A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-230417 2019-12-20
JP2019230417 2019-12-20
PCT/JP2020/046701 WO2021125155A1 (ja) 2019-12-20 2020-12-15 固体撮像素子

Publications (1)

Publication Number Publication Date
CN114830338A true CN114830338A (zh) 2022-07-29

Family

ID=76477549

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080087479.0A Pending CN114830338A (zh) 2019-12-20 2020-12-15 固体摄像元件

Country Status (4)

Country Link
US (1) US20220310684A1 (https=)
JP (1) JPWO2021125155A1 (https=)
CN (1) CN114830338A (https=)
WO (1) WO2021125155A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025130712A1 (zh) * 2023-12-20 2025-06-26 格科微电子（上海）有限公司 一种图像传感器及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12417615B2 (en) 2023-05-16 2025-09-16 Bank Of America Corporation System and method for consolidation of alerts and events using image matching of heatmap descriptions of infrastructure status
US12505003B2 (en) 2023-05-17 2025-12-23 Bank Of America Corporation System and method for multi image matching for outage prediction, prevention, and mitigation for technology infrastructure using hybrid deep learning
US12373271B2 (en) 2023-05-25 2025-07-29 Bank Of America Corporation System and method for matching multiple featureless images across a time series for outage prediction and prevention

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497733A (zh) * 2002-10-11 2004-05-19 ��ʽ���綫֥ Cmos图像传感器
CN1825609A (zh) * 2005-02-21 2006-08-30 索尼株式会社 固态成像器件及其驱动方法和照相装置
JP2008186894A (ja) * 2007-01-29 2008-08-14 Matsushita Electric Ind Co Ltd 固体撮像素子
CN101292355A (zh) * 2005-08-26 2008-10-22 美光科技公司 成像器像素的植入式隔离区
JP2012019169A (ja) * 2010-07-09 2012-01-26 Panasonic Corp 固体撮像装置
CN102547168A (zh) * 2010-12-15 2012-07-04 索尼公司 固体摄像元件、固体摄像元件的驱动方法和电子装置
WO2018216400A1 (ja) * 2017-05-25 2018-11-29 パナソニックＩｐマネジメント株式会社 固体撮像素子、及び撮像装置
CN108987420A (zh) * 2017-06-05 2018-12-11 松下知识产权经营株式会社 摄像装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497733A (zh) * 2002-10-11 2004-05-19 ��ʽ���綫֥ Cmos图像传感器
CN1825609A (zh) * 2005-02-21 2006-08-30 索尼株式会社 固态成像器件及其驱动方法和照相装置
CN101292355A (zh) * 2005-08-26 2008-10-22 美光科技公司 成像器像素的植入式隔离区
JP2008186894A (ja) * 2007-01-29 2008-08-14 Matsushita Electric Ind Co Ltd 固体撮像素子
JP2012019169A (ja) * 2010-07-09 2012-01-26 Panasonic Corp 固体撮像装置
CN102547168A (zh) * 2010-12-15 2012-07-04 索尼公司 固体摄像元件、固体摄像元件的驱动方法和电子装置
WO2018216400A1 (ja) * 2017-05-25 2018-11-29 パナソニックＩｐマネジメント株式会社 固体撮像素子、及び撮像装置
CN108987420A (zh) * 2017-06-05 2018-12-11 松下知识产权经营株式会社 摄像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025130712A1 (zh) * 2023-12-20 2025-06-26 格科微电子（上海）有限公司 一种图像传感器及其制备方法

Also Published As

Publication number Publication date
JPWO2021125155A1 (https=) 2021-06-24
US20220310684A1 (en) 2022-09-29
WO2021125155A1 (ja) 2021-06-24

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