CN114747027B - 光半导体装置用金属结构的制造方法、封装件、以及包含聚烯丙胺聚合物的溶液 - Google Patents

光半导体装置用金属结构的制造方法、封装件、以及包含聚烯丙胺聚合物的溶液 Download PDF

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CN114747027B
CN114747027B CN202080082727.2A CN202080082727A CN114747027B CN 114747027 B CN114747027 B CN 114747027B CN 202080082727 A CN202080082727 A CN 202080082727A CN 114747027 B CN114747027 B CN 114747027B
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alloy
gold
silver
optical semiconductor
semiconductor device
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CN114747027A (zh
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加藤保夫
松田和也
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Nichia Corp
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Nichia Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/02—Polyamines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/378—Thiols containing heterocyclic rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
CN202080082727.2A 2019-11-29 2020-11-20 光半导体装置用金属结构的制造方法、封装件、以及包含聚烯丙胺聚合物的溶液 Active CN114747027B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019-216173 2019-11-29
JP2019216173 2019-11-29
JP2020014772 2020-01-31
JP2020-014772 2020-01-31
PCT/JP2020/043380 WO2021106781A1 (ja) 2019-11-29 2020-11-20 光半導体装置用金属構造の製造方法、パッケージ、及びポリアリルアミン重合体を含む溶液

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CN114747027A CN114747027A (zh) 2022-07-12
CN114747027B true CN114747027B (zh) 2025-05-30

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US (1) US12559648B2 (https=)
JP (1) JP7339566B2 (https=)
CN (1) CN114747027B (https=)
WO (1) WO2021106781A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115799210A (zh) * 2022-10-26 2023-03-14 深圳基本半导体有限公司 陶瓷覆铜板及功率模块的制备方法
WO2024203737A1 (ja) * 2023-03-30 2024-10-03 日本特殊陶業株式会社 半導体素子搭載用基板
WO2024228298A1 (ja) * 2023-05-01 2024-11-07 パナソニックＩｐマネジメント株式会社 パッケージ部品および半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239540A (ja) * 2012-05-14 2013-11-28 Shin Etsu Chem Co Ltd 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法
JP2014159618A (ja) * 2013-02-20 2014-09-04 Hitachi Chemical Co Ltd 銀又は銀合金の表面処理剤、光反射基板、発光装置及び発光装置の製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180754B1 (en) * 1999-09-03 2001-01-30 The Dow Chemical Company Process for producing cross-linked polyallylamine polymer
TWI248842B (en) * 2000-06-12 2006-02-11 Hitachi Ltd Semiconductor device and semiconductor module
JP4183489B2 (ja) * 2001-11-21 2008-11-19 日本ペイント株式会社 マグネシウム及び／又はマグネシウム合金の表面処理方法及びマグネシウム及び／又はマグネシウム合金製品
JP2003347596A (ja) 2002-05-24 2003-12-05 Toshiba Corp 光半導体装置
US6936763B2 (en) * 2002-06-28 2005-08-30 Freescale Semiconductor, Inc. Magnetic shielding for electronic circuits which include magnetic materials
US7057264B2 (en) 2002-10-18 2006-06-06 National Starch And Chemical Investment Holding Corporation Curable compounds containing reactive groups: triazine/isocyanurates, cyanate esters and blocked isocyanates
TWI234210B (en) * 2002-12-03 2005-06-11 Sanyo Electric Co Semiconductor module and manufacturing method thereof as well as wiring member of thin sheet
JP4529041B2 (ja) 2004-09-24 2010-08-25 スタンレー電気株式会社 回路基板モジュール化方法
TW200640596A (en) * 2005-01-14 2006-12-01 Cabot Corp Production of metal nanoparticles
JP2007266562A (ja) 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 配線部材、樹脂付金属部品及び樹脂封止半導体装置、並びにこれらの製造方法
JP2007266343A (ja) 2006-03-29 2007-10-11 Toyoda Gosei Co Ltd 発光装置
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
JP4776515B2 (ja) 2006-12-11 2011-09-21 株式会社東亜電化 密着層
US7911059B2 (en) * 2007-06-08 2011-03-22 SeniLEDS Optoelectronics Co., Ltd High thermal conductivity substrate for a semiconductor device
WO2009020182A1 (ja) * 2007-08-08 2009-02-12 Daikin Industries, Ltd. 含フッ素樹脂および架橋フッ素ゴムを含む熱可塑性樹脂組成物
JP2009084465A (ja) 2007-10-01 2009-04-23 Aica Kogyo Co Ltd 二液型接着剤及びその接着方法
JP2009202567A (ja) * 2008-02-01 2009-09-10 Techno Polymer Co Ltd 樹脂製部材及び金属製部材からなる複合体の製造方法並びにｌｅｄ実装用基板及びｌｅｄ用リフレクター
JP2009245960A (ja) 2008-03-28 2009-10-22 Panasonic Corp 半導体装置用パッケージ、半導体装置、及びその製造方法
KR101254543B1 (ko) * 2008-06-24 2013-04-19 가부시키가이샤 신기쥬츠 켄큐쇼 철 합금물품, 철 합금부재 및 그 제조방법
JP2010013677A (ja) * 2008-07-01 2010-01-21 Nippon Parkerizing Co Ltd 金属構造物用化成処理液および表面処理方法
JPWO2010073660A1 (ja) 2008-12-25 2012-06-07 パナソニック株式会社 リード、配線部材、パッケージ部品、樹脂付金属部品及び樹脂封止半導体装置、並びにこれらの製造方法
WO2010085319A1 (en) 2009-01-22 2010-07-29 Aculon, Inc. Lead frames with improved adhesion to plastic encapsulant
JP2011228589A (ja) 2010-04-22 2011-11-10 Panasonic Corp 光半導体装置用部品ならびにその製造方法
JP5627980B2 (ja) 2010-10-04 2014-11-19 アルプス電気株式会社 トリアジン化合物及びその製造方法、トリアジン化合物を用いた接合剤及び接着方法、トリアジン化合物を用いた表面処理剤及び表面処理方法、ならびに接合部材及びその製造方法
JP5685424B2 (ja) * 2010-11-22 2015-03-18 Ａｇｃコーテック株式会社 Ｌｅｄ装置用塗料組成物、それを用いたｌｅｄ装置及びｌｅｄランプ
JP5505405B2 (ja) * 2011-12-15 2014-05-28 ダイキン工業株式会社 含フッ素エラストマーおよび含フッ素エラストマーの製造方法
JP2014063773A (ja) 2012-09-19 2014-04-10 Toyota Motor Corp 半導体装置の製造方法
WO2014164418A1 (en) * 2013-03-11 2014-10-09 North Carolina State University Functionalized environmentally benign nanoparticles
JP5892276B1 (ja) * 2014-03-05 2016-03-23 ダイキン工業株式会社 フッ素ゴム組成物及びフッ素ゴム成形品
JP6319632B2 (ja) * 2014-07-23 2018-05-09 株式会社豊田自動織機 リチウムイオン二次電池用正極とその製造方法及びリチウムイオン二次電池
US10165954B2 (en) * 2014-07-31 2019-01-01 Salutron Inc. Integrated sensor modules
KR102511230B1 (ko) * 2015-06-02 2023-03-17 닛산 가가쿠 가부시키가이샤 무용제형 광경화성 접착제용 조성물
KR102359594B1 (ko) * 2017-09-19 2022-02-07 엘지디스플레이 주식회사 복합 무기 발광 재료, 발광 필름, 이를 포함하는 엘이디 패키지, 발광다이오드 및 발광장치
JP6733940B1 (ja) * 2019-03-22 2020-08-05 大口マテリアル株式会社 リードフレーム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239540A (ja) * 2012-05-14 2013-11-28 Shin Etsu Chem Co Ltd 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法
JP2014159618A (ja) * 2013-02-20 2014-09-04 Hitachi Chemical Co Ltd 銀又は銀合金の表面処理剤、光反射基板、発光装置及び発光装置の製造方法

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US12559648B2 (en) 2026-02-24
US20230002637A1 (en) 2023-01-05
WO2021106781A1 (ja) 2021-06-03
CN114747027A (zh) 2022-07-12
JP7339566B2 (ja) 2023-09-06
JPWO2021106781A1 (https=) 2021-06-03

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