CN114716918A - 粘合剂构件、显示装置和显示装置的制造方法 - Google Patents
粘合剂构件、显示装置和显示装置的制造方法 Download PDFInfo
- Publication number
- CN114716918A CN114716918A CN202111609881.3A CN202111609881A CN114716918A CN 114716918 A CN114716918 A CN 114716918A CN 202111609881 A CN202111609881 A CN 202111609881A CN 114716918 A CN114716918 A CN 114716918A
- Authority
- CN
- China
- Prior art keywords
- conductive
- layer
- conductive particles
- adhesive member
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 111
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title description 26
- 239000002245 particle Substances 0.000 claims abstract description 248
- 230000006835 compression Effects 0.000 claims description 24
- 238000007906 compression Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 239000003302 ferromagnetic material Substances 0.000 claims description 9
- 239000003779 heat-resistant material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 171
- 239000013256 coordination polymer Substances 0.000 description 86
- 229920005989 resin Polymers 0.000 description 65
- 239000011347 resin Substances 0.000 description 65
- 239000000758 substrate Substances 0.000 description 33
- 239000011159 matrix material Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 27
- 238000003825 pressing Methods 0.000 description 21
- 230000005291 magnetic effect Effects 0.000 description 19
- 239000005022 packaging material Substances 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000005452 bending Methods 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 239000011575 calcium Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002174 Styrene-butadiene Substances 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- 239000011115 styrene butadiene Substances 0.000 description 2
- 229920003048 styrene butadiene rubber Polymers 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 239000012815 thermoplastic material Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- PEIBAWRLFPGPAT-UHFFFAOYSA-N 1-(diazomethyl)pyrene Chemical compound C1=C2C(C=[N+]=[N-])=CC=C(C=C3)C2=C2C3=CC=CC2=C1 PEIBAWRLFPGPAT-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/129—Chiplets
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/1601—Structure
- H01L2224/16012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/16014—Structure relative to the bonding area, e.g. bond pad the bump connector being smaller than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29011—Shape comprising apertures or cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/2901—Shape
- H01L2224/29012—Shape in top view
- H01L2224/29013—Shape in top view being rectangular or square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/29078—Plural core members being disposed next to each other, e.g. side-to-side arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29083—Three-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29191—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29391—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29491—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81208—Compression bonding applying unidirectional static pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/81423—Magnesium [Mg] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/81424—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81464—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81466—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81469—Platinum [Pt] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81471—Chromium [Cr] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81478—Iridium [Ir] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/8148—Molybdenum [Mo] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81481—Tantalum [Ta] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/81484—Tungsten [W] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83208—Compression bonding applying unidirectional static pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01064—Gadolinium [Gd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01065—Terbium [Tb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/2075—Diameter ranges larger or equal to 1 micron less than 10 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/381—Pitch distance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明涉及一种粘合剂构件、一种显示装置和一种显示装置的制造方法。所述粘合剂构件包括:导电颗粒层,包括多个导电颗粒;非导电层,设置在所述导电颗粒层上;以及屏蔽层,插入在所述导电颗粒层和所述非导电层之间并且包括多个彼此间隔开的屏蔽构件。
Description
相关申请的交叉引用
本申请要求于2021年1月5日在韩国知识产权局提交的第10-2021-0000997号韩国专利申请的优先权,该韩国专利申请的公开内容通过引用全部包含于此。
技术领域
本发明涉及一种粘合剂构件、显示装置和显示装置的制造方法。
背景技术
随着多媒体需求的增加,对显示装置的需求也在增加。作为响应,正在使用各种类型的显示装置,诸如液晶显示(LCD)装置、有机发光二极管(OLED)显示装置、量子点发光二极管(QLED)显示装置等。
发光元件和驱动构件,诸如用于驱动发光元件的驱动集成电路,可以安装在显示装置的显示面板上。显示面板和驱动构件可以通过经由诸如各向异性导电膜的粘合剂构件彼此接合而彼此电连接。
发明内容
根据本发明的实施例,一种粘合剂构件包括:导电颗粒层,包括多个导电颗粒;非导电层,设置在所述导电颗粒层上;以及屏蔽层,插入在所述导电颗粒层和所述非导电层之间并且包括多个彼此间隔开的屏蔽构件。
在本发明的实施例中,所述非导电层包括多个非导电颗粒,并且所述多个非导电颗粒中的每一个包括弹性颗粒和设置在所述弹性颗粒上的粘合剂涂层。
在本发明的实施例中,所述非导电层的厚度大于所述导电颗粒层的厚度。
在本发明的实施例中,所述多个屏蔽构件插入在显示面板的多个焊盘电极之间、以及在配置为驱动所述显示面板的像素电路的驱动构件的多个凸块之间,并且所述多个屏蔽构件中的每一个的宽度小于或等于所述多个凸块之间的间隙的宽度。
在本发明的实施例中,所述多个导电颗粒中的至少一个设置为在厚度方向上与所述多个屏蔽构件重叠。
在本发明的实施例中,所述多个屏蔽构件中的每一个包括耐热材料。
在本发明的实施例中,所述多个屏蔽构件中的每一个包括非导电铁磁材料。
在本发明的实施例中,所述多个屏蔽构件中的每一个包括钆(Gd)、铽(Tb)、镝(Dy)或钬(Ho)中的至少一种。
根据本发明的实施例,一种显示装置包括:显示面板;驱动构件,配置为驱动所述显示面板;以及粘合剂构件,插入在所述显示面板和所述驱动构件之间,其中,所述粘合剂构件包括:导电颗粒层,包括多个导电颗粒;非导电层,设置在所述导电颗粒层上;以及屏蔽层,插入在所述导电颗粒层和所述非导电层之间并且包括多个彼此间隔开的屏蔽构件。
在本发明的实施例中,所述非导电层包括多个非导电颗粒,并且所述多个非导电颗粒中的每一个包括弹性颗粒和至少部分地围绕所述弹性颗粒的涂层。
在本发明的实施例中,所述非导电层的厚度大于所述导电颗粒层的厚度。
在本发明的实施例中,所述驱动构件包括多个凸块,并且所述多个屏蔽构件中的每一个的宽度小于或等于所述多个凸块之间的间隙的宽度。
在本发明的实施例中,所述显示面板包括多个焊盘电极,所述多个焊盘电极中的每一个的宽度大于或等于所述多个凸块中的每一个的宽度,并且所述多个屏蔽构件中的每一个的宽度大于或等于所述焊盘电极之间的间隙的宽度。
在本发明的实施例中,所述多个导电颗粒中的至少一个设置为在厚度方向上与所述多个屏蔽构件重叠。
在本发明的实施例中,所述多个屏蔽构件中的每一个包括耐热材料。
在本发明的实施例中,所述多个屏蔽构件中的每一个包括非导电铁磁材料。
根据本发明的实施例,一种显示装置的制造方法包括:在显示面板的多个焊盘电极与驱动构件的多个凸块之间插入粘合剂构件,其中,所述粘合剂构件包括:导电颗粒层;非导电层,设置在所述导电颗粒层上;以及屏蔽层,设置在所述导电颗粒层与所述非导电层之间并且包括多个屏蔽构件,其中,所述导电颗粒层包括多个导电颗粒;并且对所述显示面板或所述驱动构件中的至少一个进行热压接合,使得所述多个导电颗粒中的多个第一导电颗粒在所述屏蔽层的所述多个屏蔽构件之间流动。
在本发明的实施例中,对所述显示面板或所述驱动构件中的至少一个进行的热压接合包括阻止所述多个导电颗粒的位于所述多个焊盘电极之间的多个第二导电颗粒的流动。
在本发明的实施例中,所述制造方法还包括在插入所述粘合剂构件之后,通过使用磁场将所述粘合剂构件与所述显示面板和所述驱动构件对准。
在本发明的实施例中,通过使用磁场将所述粘合剂构件与所述显示面板和所述驱动构件对准包括通过使用由配置为保持所述驱动构件的加压构件中提供的磁体所提供的磁场在至少一个方向上移动所述粘合剂构件。
附图说明
本发明的上述和其他特征将通过参照附图详细描述本发明的实施例而变得更加清楚,在附图中:
图1是示出根据本发明的实施例的显示装置的平面图;
图2是沿着图1的线A-A′截取的截面图;
图3是沿着图1的线B-B′截取的截面图;
图4是示出根据本发明的实施例的粘合剂构件的截面图;
图5是示出根据本发明的实施例的粘合剂构件的平面图;
图6是示出根据本发明的实施例的导电颗粒的截面图;
图7是示出根据本发明的实施例的非导电颗粒的截面图;
图8是示出根据本发明的实施例的粘合剂构件的平面图;
图9是示出根据本发明的实施例的非导电颗粒的透视图;
图10是示出根据本发明的实施例的非导电颗粒的透视图;
图11是示出根据本发明的实施例的粘合剂构件的截面图;
图12是示出图10的粘合剂构件的平面图;
图13是示出根据本发明的实施例的粘合剂构件的截面图;
图14是示出根据本发明的实施例的粘合剂构件的截面图;
图15是示出根据本发明的实施例的显示装置的制造方法的流程图;
图16和图17是示出根据本发明的实施例的显示装置的制造方法的步骤的图;
图18和图19是示出根据本发明的实施例的显示装置的制造方法的步骤的图;
图20、图21和图22是示出根据本发明的实施例的显示装置的制造方法的步骤的图;
图23、图24和图25是示出根据本发明的实施例的显示装置的制造方法的步骤的图;以及
图26、图27、图28和图29是示出根据本发明的实施例的显示装置的制造方法的步骤的图。
具体实施方式
现在将在下文中参照附图更全面地描述本发明。然而,本发明可以以不同的形式体现并且不应被解释为限于这里阐述的实施例。在整个说明书中,相同的附图标记可以表示相同的组件。在附图中,为了清楚起见,可以夸大层和区域的厚度。换言之,由于为了清楚起见可以夸大附图中组件的尺寸和厚度,因此本发明的以下实施例不限于此。
还将理解的是,当层被称为“在”另一层或基底“上”时,该层或基底可以直接在所述另一层或基底上,或者也可以存在居间层。相比之下,当元件被称为“直接在”另一元件“上”时,不存在居间元件。
在下文中,将参照附图描述本发明的实施例。
图1是示出根据本发明的实施例的显示装置的平面图。图2是沿着图1的线A-A′截取的截面图。图3是沿着图1的线B-B′截取的截面图。
参照图1,显示装置1是显示运动图像和/或静止图像的装置。显示装置1可以用作诸如移动电话、智能电话、平板个人计算机(PC)、智能手表、手表电话、移动通讯终端、电子笔记本、电子书阅读器、便携式多媒体播放器(PMP)、导航系统和超移动个人计算机(UMPC)等便携式电子装置的显示屏以及各种其他产品,诸如电视、笔记本电脑、显示器、广告板和物联网装置。
显示装置1可以包括显示面板DP,显示面板DP包括用于显示图像的屏幕。
例如,可以将有机发光二极管(OLED)显示面板用作显示面板DP。在以下实施例中,将对有机发光二极管(OLED)显示面板用作显示面板DP的示例进行描述,但本发明不限于此,并且例如,诸如液晶显示(LCD)面板、场发射显示(FED)面板、电泳装置或量子点发光二极管(QLED)显示面板的其他类型的显示面板可以用作显示面板DP。
当在平面图中观察时,显示面板DP可以具有基本上矩形形状。例如,显示面板DP的角可以是圆形的或可以具有直角。在这种情况下,显示面板DP(例如,基底SUB)的与连接到将在下面描述的印刷电路板PCB的显示面板DP的一部分相邻的两个角可以被切割成“L”形状,但本发明不限于此。例如,显示面板DP可以包括突起,该突起与显示面板DP的两个角相邻并且与印刷电路板PCB相邻。
显示面板DP可以包括用于显示视频或图像的显示区域DA和设置在显示区域DA的外围的非显示区域NDA。例如,非显示区域NDA可以至少部分地围绕显示区域DA。当在平面图中观察时,显示区域DA可以具有基本上矩形形状,并且非显示区域NDA可以具有矩形形状,该矩形形状具有显示区域DA可以被提供在其中的开口,使得非显示区域NDA可以至少部分地围绕显示区DA,但本发明不限于此。
显示装置1还可以包括印刷电路板PCB。印刷电路板PCB可以接合到基底SUB的子区域PA,这将在下面描述。在这种情况下,如图1中所示,当显示面板DP展开时,当在平面图中观察时,驱动构件DM可以设置在印刷电路板PCB和弯曲区域BA之间。印刷电路板PCB可以包括刚性电路基底、柔性印刷电路板和柔性印刷电路膜。
显示面板DP可以包括基底SUB。
基底SUB可以是包括诸如聚酰亚胺(PI)的柔性材料的柔性基底。然而,本发明不限于此,并且基底SUB可以是包括诸如玻璃或石英的刚性材料的刚性基底。
基底SUB可以包括主区域MA、连接到主区域MA的弯曲区域BA和连接到弯曲区域BA的子区域PA。
主区域MA可以是基本上平坦的。显示区域DA可以位于主区域MA中。弯曲区域BA和子区域PA可以设置在非显示区域NDA中。弯曲区域BA可以从主区域MA延伸,并且子区域PA可以从弯曲区域BA延伸。弯曲区域BA可以将主区域MA连接到子区域PA。弯曲区域BA与子区域PA可以设置在主区域MA的一侧,例如主区域MA的下端部,但本发明不限于此。驱动构件DM和将在下面描述的多个焊盘电极PE(参考图3)可以设置在子区域PA中。然而,本发明不限于此,并且驱动构件DM和焊盘电极PE可以设置在主区域MA和/或弯曲区域BA中。弯曲区域BA可以在与显示方向相反的方向上弯曲(在顶部发射类型的情况下,弯曲区域BA可以在后方向上弯曲)。在这种情况下,子区域PA可以在厚度方向上与主区域MA重叠。然而,弯曲区域BA的弯曲方向不限于以上示例,并且弯曲区域BA可以例如在显示方向(例如,前方向)上弯曲。
参照图1和图2,显示面板DP还可以包括设置在基底SUB上的多个导电层120、130、140和150,以及用于使多个导电层120、130、140和150绝缘的多个绝缘层111、112、113、VIA1和VIA2。显示面板DP还可以包括发光层EL。
缓冲层BFF可以设置在基底SUB上。缓冲层BFF可以防止水分和氧气通过基底SUB从外部渗入。缓冲层BFF可以包括氮化硅(SiNx)层、氧化硅(SiO2)层和氮氧化硅(SiOxNy)层中的任何一种,但本发明不限于此。
半导体层105可以设置在缓冲层BFF上。半导体层105形成薄膜晶体管的沟道。半导体层105可以设置在显示区域DA的每个像素中。在某些情况下,半导体层105也可以设置在非显示区域NDA中。半导体层105可以包括多晶硅。
第一绝缘层111可以设置在半导体层105上。例如,第一绝缘层111可以设置在整个基底SUB上。第一绝缘层111可以是具有栅极绝缘功能的栅极绝缘层。
第一绝缘层111可以包括硅化合物或金属氧化物等。例如,第一绝缘层111可以包括氧化硅(SiO2)、氮化硅(SiNx)、氮氧化硅(SiOxNy)、氧化铝(Al2O3)、氧化钽(Ta2O5)、氧化铪(HfO2)、氧化锆(ZrO)或氧化钛(TiO2)等。这些可以单独使用或它们组合使用。
第一导电层120可以设置在第一绝缘层111上。第一导电层120可以包括薄膜晶体管TFT的栅极电极GE和存储电容器的第一电极CE1。
第一导电层120可以包括钼(Mo)、铝(Al)、铂(Pt)、钯(Pd)、银(Ag)、镁(Mg)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、钙(Ca)、钛(Ti)、钽(Ta)、钨(W)和铜(Cu)中的至少一种。第一导电层120可以是由示例材料制成的单层或叠层。
第二绝缘层112可以设置在第一导电层120上。第二绝缘层112可以使第一导电层120与第二导电层130绝缘。第二绝缘层112可以由选自在第一绝缘层111的示例材料中的材料制成。
第二导电层130可以设置在第二绝缘层112上。第二导电层130可以包括存储电容器的第二电极CE2。第二导电层130可以由选自第一导电层120的示例材料中的材料制成。由于第二绝缘层112设置在第一电极CE1和第二电极CE2之间,存储电容器的第一电极CE1和第二电极CE2可以形成电容器。
第三绝缘层113可以设置在第二导电层130上。第三绝缘层113可以包括用于第一绝缘层111的示例材料中的至少一种。在本发明的实施例中,第三绝缘层113可以包括有机绝缘材料。有机绝缘材料可以选自将在下面描述的用于第一通孔层VIA1的示例材料。
第三导电层140可以设置在第三绝缘层113上。第三导电层140可以包括源极电极SE、漏极电极DE、高电位电压电极ELVDDE和信号线(未示出)。
第三导电层140可以包括例如钼(Mo)、铝(Al)、铂(Pt)、钯(Pd)、银(Ag)、镁(Mg)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、钙(Ca)、钛(Ti)、钽(Ta)、钨(W)和铜(Cu)中的至少一种。第三导电层140可以是由示例材料制成的单层。本发明不限于此,并且第三导电层140可以是叠层。例如,第三导电层140可以形成为钛(Ti)/铝(Al)/钛(Ti)、钼(Mo)/铝(Al)/钼(Mo)、钼(Mo)/铝锗(AlGe)/钼(Mo)或钛(Ti)/铜(Cu)的堆叠结构。在本发明的实施例中,第三导电层140可以由钛(Ti)/铝(Al)/钛(Ti)形成。
第一通孔层VIA1可以设置在第三导电层140上。第一通孔层VIA1可以包括有机绝缘材料。有机绝缘材料可以包括例如丙烯酸类树脂、环氧树脂、酚醛树脂、聚酰胺类树脂、聚酰亚胺类树脂、不饱和聚酯类树脂、聚亚苯类树脂、聚苯硫醚类树脂和苯并环丁烯(BCB)中的至少一种。
第四导电层150可以设置在第一通孔层VIA1上。第四导电层150可以包括数据线DL、连接电极CNE和高电位电压线ELVDDL。数据线DL可以通过穿过第一通孔层VIA1的接触孔电连接到薄膜晶体管TFT的源极电极SE。连接电极CNE可以通过穿过第一通孔层VIA1的接触孔电连接到薄膜晶体管TFT的漏极电极DE。高电位电压线ELVDDL可以通过穿过第一通孔层VIA1的接触孔电连接到高电位电压电极ELVDDE。第四导电层150可以包括选自用于第三导电层140的示例材料的材料。
第二通孔层VIA2可以设置在第四导电层150上。第二通孔层VIA2可以包括用于第一通孔层VIA1的示例材料中的至少一种。
阳极电极ANO可以设置在第二通孔层VIA2上。阳极电极ANO可以通过穿过第二通孔层VIA2的接触孔电连接到连接电极CNE。
堤层BANK可以设置在阳极电极ANO上。堤层BANK可以包括暴露阳极电极ANO的至少一部分的接触孔。堤层BANK可以由有机绝缘材料或无机绝缘材料制成。例如,堤层BANK可以由光刻胶、聚酰亚胺类树脂、丙烯酸类树脂、硅化合物和聚丙烯酸类树脂中的至少一种制成。
发光层EL可以设置在阳极电极ANO上并且设置在堤层BANK的开口OP中。例如,发光层EL可以设置在阳极电极ANO的上表面上。阴极电极CAT设置在发光层EL和堤层BANK上。阴极电极CAT可以是设置在多个像素上方的公共电极。
薄膜封装层170可以设置在阴极电极CAT上。薄膜封装层170可以覆盖有机发光元件OLED。薄膜封装层170可以是无机膜和有机膜交替地堆叠的堆叠层。例如,薄膜封装层170可以包括顺序地堆叠的第一无机封装膜171、有机封装膜172和第二无机封装膜173,但本发明不限于此。
显示面板DP可以包括设置在基底SUB上的下面板片CPNL。例如,下面板片CPNL可以设置在基底SUB的下表面上。下面板片CPNL可以包括至少一个功能层,包括例如数字转换器、散热构件、阻挡构件或缓冲构件。
参照图1至图3,显示面板DP还可以包括多个焊盘电极PE。
多个焊盘电极PE可以设置在基底SUB的子区域PA中。例如,多个焊盘电极PE可以通过连接到显示区域DA的像素电路的线电连接到多个导电层中的至少一个导电层。多个焊盘电极PE可以包括与多个导电层相同或相似的材料。例如,多个焊盘电极PE可以包括钼(Mo)、铝(Al)、铂(Pt)、钯(Pd)、银(Ag)、镁(Mg)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、钙(Ca)、钛(Ti)、钽(Ta)、钨(W)和铜(Cu)中的至少一种。如下所述,多个焊盘电极PE可以通过粘合剂构件AD电连接到驱动构件DM的多个凸块BP。多个绝缘层中的至少一个绝缘层可以设置在其上安装驱动构件DM的基底SUB的上表面上,并且多个焊盘电极PE可以通过形成在多个绝缘层中的至少一个绝缘层中的孔暴露。
显示装置1还可以包括用于驱动显示面板DP的像素电路的驱动构件DM。
驱动构件DM可以安装在显示面板DP的子区域PA中,但本发明不限于此。在本发明的实施例中,驱动构件DM通过塑料覆晶(COP)方法安装在显示面板DP上,但本发明不限于此。驱动构件DM可以通过薄膜覆晶(COF)方法或玻璃覆晶(COG)方法安装。
驱动构件DM可以包括驱动芯片IC和多个凸块BP。
驱动芯片IC可以包括半导体芯片,半导体芯片包括用于驱动显示面板DP的像素电路的电路,诸如显示驱动集成电路。多个凸块BP可以从驱动芯片IC突出并且可以电连接到驱动芯片IC的电路。
多个凸块BP可以设置为面对设置在基底SUB的子区域PA中的多个焊盘电极PE。例如,如图3中所示,多个焊盘电极PE可以设置在基底SUB的子区域PA中。多个凸块BP可以包括导电材料,例如金(Au)、镍(Ni)和锡(Sn)中的至少一种。
显示装置1还可以包括将显示面板DP接合到驱动构件DM的粘合剂构件AD。
粘合剂构件AD可以插入在基底SUB和驱动构件DM之间以将基底SUB接合到驱动构件DM。例如,粘合剂构件AD可以插入在其上设置多个焊盘电极PE的基底SUB的上表面和其上设置多个凸块BP的驱动构件DM的下表面之间以将多个焊盘电极PE电连接到驱动构件DM的多个凸块BP。
在下文中,将参照图4至图7更详细地描述粘合剂构件AD。
图4是示出根据本发明的实施例的粘合剂构件的截面图。图5是示出根据本发明的实施例的粘合剂构件的平面图。图6是示出根据本发明的实施例的导电颗粒的截面图。图7是示出根据本发明的实施例的非导电颗粒的截面图。
粘合剂构件AD可以是插入在显示面板DP的焊盘电极PE和驱动构件DM的凸块BP之间,以将焊盘电极PE接合并电连接到凸块BP的薄膜型构件,例如各向异性导电膜,但本发明不限于此。
参照图4,粘合剂构件AD可以包括导电颗粒层CL和设置在导电颗粒层CL上的非导电层NCL。
导电颗粒层CL可以包括第一基体树脂BS1和多个导电颗粒CP。
第一基体树脂BS1可以包括绝缘粘合材料。绝缘粘合材料可以包括诸如苯乙烯丁二烯和聚乙烯基丁烯的热塑性材料,和/或诸如环氧树脂、聚氨酯和丙烯酸树脂的热固性材料。第一基体树脂BS1可以在将驱动构件DM(参考图3)接合到显示面板DP(参考图3)的热压接合工艺期间熔化并固化,从而将显示面板DP接合到驱动构件DM。
多个导电颗粒CP可以分散在第一基体树脂BS1中。多个导电颗粒CP中的每一个可以包括导电材料。在热压接合工艺中,多个导电颗粒CP可以流入第一基体树脂BS1中并且可以在显示面板DP的焊盘电极PE(参考图3)和驱动构件DM的凸块BP(参考图3)之间被捕获,从而将焊盘电极PE电连接到凸块BP。多个导电颗粒CP可以是精细尺寸的圆形颗粒。例如,导电颗粒CP的直径的范围可以为大约1μm至大约15μm。作为另一示例,导电颗粒CP的直径的范围可以为大约2μm至大约4μm。然而,导电颗粒CP的尺寸不限于上述示例。
在本发明的实施例中,多个导电颗粒CP可以是多边形形状颗粒。
非导电层NCL可以包括第二基体树脂BS2和多个非导电颗粒NCP。
第二基体树脂BS2可以由与第一基体树脂BS1基本上相同或相似的材料制成。第二基体树脂BS2可以由与第一基体树脂BS1相同的绝缘粘合材料制成,或者可以由与第一基体树脂BS1的绝缘粘合材料不同的绝缘粘合材料制成。
多个非导电颗粒NCP可以分散在第二基体树脂BS2中。多个非导电颗粒NCP中的每一个可以由绝缘材料制成。在热压接合工艺期间,多个非导电颗粒NCP可以降低多个导电颗粒CP的流动性。
参照图5,多个导电颗粒CP和多个非导电颗粒NCP可以分别分散在第一基体树脂BS1(参考图4)和第二基体树脂BS2中。例如,多个导电颗粒CP和多个非导电颗粒NCP可以不规则地分散在第一基体树脂BS1和第二基体树脂BS2中。当在平面图中观察时,可以在多个导电颗粒CP之间提供间隙,并且可以在多个非导电颗粒NCP之间提供间隙。例如,提供在多个导电颗粒CP之间的间隙可以变化,并且提供在多个非导电颗粒NCP之间的间隙可以变化。例如,提供在多个导电颗粒CP之间的间隙可以与提供在多个非导电颗粒NCP之间的间隙不同或相同。如图5中所示,多个非导电颗粒NCP可以以高于多个导电颗粒CP的密度的密度分布,但本发明不限于此。参照图6,多个导电颗粒CP中的每一个可以包括第一弹性颗粒PP1、导电涂层CCL和多个绝缘颗粒ICP。
例如,第一弹性颗粒PP1可以由例如包括弹性材料的球形颗粒(诸如聚合物颗粒)制成。第一弹性颗粒PP1可以具有精细尺寸。例如,第一弹性颗粒PP1的直径的范围可以为大约1μm至大约15μm。作为另一示例,第一弹性颗粒PP1的直径的范围可以为大约2μm至大约4μm。然而,第一弹性颗粒PP1的尺寸不限于上述示例。
导电涂层CCL可以设置为至少部分地围绕第一弹性颗粒PP1的外表面以涂覆第一弹性颗粒PP1。导电涂层CCL可以由导电材料制成。例如,导电材料可以包括诸如镍(Ni)和银(Ag)的金属。
多个绝缘颗粒ICP可以设置在导电涂层CCL上以在导电涂层CCL上形成不平坦的表面。多个绝缘颗粒ICP可以允许导电颗粒CP容易地在焊盘电极PE(参考图3)和凸块BP(参考图3)之间被捕获,并且可以防止当在不同的导电颗粒CP彼此紧密接触时可以发生的短路。
参照图7,多个非导电颗粒NCP中的每一个可以包括第二弹性颗粒PP2和粘合剂涂层ADL。
例如,第二弹性颗粒PP2可以是包括弹性材料的球形颗粒,诸如聚合物颗粒。第二弹性颗粒PP2可以小于第一弹性颗粒PP1。例如,第二弹性颗粒PP2的直径的范围可以为大约2μm至大约4μm,但本发明不限于此。
粘合剂涂层ADL可以设置为至少部分地围绕第二弹性颗粒PP2的外表面以涂覆第二弹性颗粒PP2。粘合剂涂层ADL可以包括绝缘粘合材料。例如,绝缘粘合材料可以包括诸如苯乙烯丁二烯和聚乙烯基丁烯的热塑性材料,和/或诸如环氧树脂、聚氨酯和丙烯酸树脂的热固性材料。在这种情况下,粘合剂涂层ADL可以由与非导电颗粒NCP分散在其中的第二基体树脂BS2的材料不同的材料制成,但本发明不限于此。例如,粘合剂涂层ADL将在下面描述的热压接合工艺期间熔化,以增加显示面板DP和驱动构件DM之间的粘合强度。在本发明的实施例中,粘合剂涂层ADL可以形成为在第二弹性颗粒PP2上具有相对光滑的表面,但本发明不限于此。例如,粘合剂涂层ADL可以没有凸块并且可以具有相对平坦的表面。
参照图6和图7,导电颗粒CP可以具有大于非导电颗粒NCP的尺寸的尺寸。因此,在热压接合工艺期间,非导电颗粒NCP可以渗入导电颗粒CP之间,以降低导电颗粒CP的流动性。然而,本发明不限于此,并且导电颗粒CP的尺寸可以小于或等于非导电颗粒NCP的尺寸。
导电颗粒CP的第一直径D1可以大于非导电颗粒NCP的第二直径D2。例如,第一直径D1和第二直径D2可以分别是第一弹性颗粒PP1的直径和第二弹性颗粒PP2的直径。作为另一示例,第一直径D1可以是包括导电涂层CCL和绝缘颗粒ICP的厚度的导电颗粒CP的直径。作为附加示例,第二直径D2可以是包括粘合剂涂层ADL的厚度的非导电颗粒NCP的直径。直径可以指最大直径和/或平均直径。例如,第一直径D1的范围可以为大约2μm至大约4μm,并且第二直径D2的范围可以为大约2μm至大约4μm,但本发明不限于此。
图8是示出根据本发明的实施例的粘合剂构件的平面图。
参照图8,与图5的实施例不同,多个导电颗粒CP和多个非导电颗粒NCP可以设置为具有预定布置。
例如,如图8中所示,当在平面图中观察时,多个导电颗粒CP和多个非导电颗粒NCP可以分别以矩阵的形式布置以形成多个行和多个列。在这种情况下,非导电颗粒NCP可以具有小于导电颗粒CP的尺寸的尺寸。例如,多个非导电颗粒NCP可以布置为形成比多个导电颗粒CP的数量更多数量的行和更多数量的列。因此,当在平面图中观察时,多个非导电颗粒NCP可以以比多个导电颗粒CP更窄的间隔布置。然而,本发明不限于此,并且例如,多个非导电颗粒NCP可以具有与多个导电颗粒CP的数量相同数量的行和相同数量的列。作为附加示例,当在平面图中观察时,布置多个非导电颗粒NCP的间隔可以大于或等于布置多个导电颗粒CP的间隔。
如图8中所示,多个非导电颗粒NCP中的至少一些可以布置为在厚度方向上与多个导电颗粒CP不完全重叠或者可以布置为与多个导电颗粒CP部分地重叠,但本发明不限于此。
除了多个导电颗粒CP和多个非导电颗粒NCP的布置方式之外,图8的实施例与图4至图7的实施例基本上相同或相似,并且因此已经省略此处对图8的实施例的重复描述。
图9是示出根据本发明的实施例的非导电颗粒的透视图。图10是示出根据本发明的实施例的非导电颗粒的透视图;
参照图9和图10,与图7的实施例不同,非导电颗粒NCP可以具有除球形形状之外的形状。
例如,如图9中所示,非导电颗粒NCP可以包括从粘合剂涂层ADL突出的多个突出构件ACM。例如,多个突出构件ACM中的每一个都可以是粘合剂涂层ADL的一部分。例如,多个突出构件ACM可以一体地连接到粘合剂涂层ADL,或者多个突出构件ACM可以是由与粘合剂涂层ADL的材料不同的材料制成的单独构件。多个突出构件ACM可以各自包括上述绝缘粘合材料。在图9中,突出构件ACM可以具有锥形形状或三角形形状,但本发明不限于此。在热压接合工艺中,由于多个突出构件ACM,非导电颗粒NCP的流动性可以降低。
作为另一示例,如图10中所示,非导电颗粒NCP可以具有圆柱形状。在这种情况下,在热压接合工艺期间中,非导电颗粒NCP可以具有小于图7的球形形状的非导电颗粒NCP的流动性的流动性,并且可以具有大于图9的可能为例如针状形状的非导电颗粒NCP的流动性的流动性。例如,根据非导电颗粒NCP的形状,可以在热压接合工艺期间适当调整非导电颗粒NCP的流动性。
除了非导电颗粒NCP的形状之外,图9和图10的实施例与图4至图7的实施例基本上相同或相似,并且因此已经省略了此处对图9和图10的实施例的重复描述。
图11是示出根据本发明的实施例的粘合剂构件的截面图。图12是示出图11的粘合剂构件的平面图。
参照图11和图12,与图4的实施例不同,在图11和图12的粘合剂构件ADa中,包括多个坝PDAM的非导电层NCL可以设置在导电颗粒层CL上。
当在平面图中观察时,多个坝PDAM中的每一个可以具有例如矩形棱柱形状或圆柱形状。多个坝PDAM可以设置为以规则的间隔隔开。形成在坝PDAM之间的开口OP可以填充有第二基体树脂BS2。第二基体树脂BS2可以由与第一基体树脂BS1不同类型的树脂制成,或者可以由与第一基体树脂BS1相同类型的树脂制成。
再次参照图3,坝PDAM之间的分隔间隙可以与焊盘电极PE之间的间距和/或凸块BP之间的间距基本上相同。如下所述,在热压接合工艺中,焊盘电极PE和凸块BP可以通过在坝PDAM之间的开口OP中的导电颗粒CP彼此电连接。
如图11和图12中所示,多个坝PDAM和多个导电颗粒CP可以设置为在厚度方向上彼此不重叠。在这种情况下,多个导电颗粒CP可以以规则的间隔布置。然而,本发明不限于此。多个坝PDAM和多个导电颗粒CP可以设置为在厚度方向上彼此重叠。在这种情况下,多个导电颗粒CP可以如图5中所示不规则地分散在第一基体树脂BS1中,或者如图8中所示可以规则地分散在第一基体树脂BS1中。
如图11中所示,多个坝PDAM中的每一个可以具有与非导电层NCL基本上相同的厚度,并且第二基体树脂BS2可以设置在多个坝PDAM之间。例如,当在截面图中观察时,多个坝PDAM可以隔离被填充在多个坝PDAM之间的第二基体树脂BS2。然而,本发明不限于此,并且多个坝PDAM中的每一个的厚度可以小于非导电层NCL的厚度。在这种情况下,例如,多个坝PDAM的下端可以与导电颗粒层CL直接接触,并且被填充在多个坝PDAM之间的第二基体树脂BS2可以设置在多个坝PDAM的上端上方以彼此整体连接。
多个坝PDAM中的每一个可以由绝缘材料制成。绝缘材料可以包括具有高耐热性的有机绝缘材料,例如,聚砜、聚醚砜、聚苯硫醚、聚酰亚胺、聚酰胺酰亚胺、硅氧烷改性的聚酰亚胺、硅氧烷改性的聚酰胺酰亚胺、聚醚酰亚胺和聚醚醚酮中的至少一种。多个坝PDAM中的每一个还可以包括将在下面描述的非绝缘铁磁材料。
除了多个坝PDAM之外,图11和图12的实施例与图4至图7的实施例基本上相同或相似,并且因此已经省略了此处对图11和图12的实施例的重复描述。
图13是示出根据本发明的实施例的粘合剂构件的截面图。
参照图13,粘合剂构件ADb还可以包括插入在导电颗粒层CL和非导电层NCL(参考图4)之间的屏蔽层SCL。在这种情况下,粘合剂构件ADb的导电颗粒层CL可以包括多个导电颗粒CP,并且非导电层NCL可以仅由第二基体树脂BS2制成。
屏蔽层SCL可以包括多个屏蔽构件SCM。
多个屏蔽构件SCM可以设置成以预定间隔(例如,规则间隔)彼此间隔开。在本发明的实施例中,屏蔽构件SCM之间的分隔间隙可以小于或等于焊盘电极PE(参考图3)的宽度并且可以大于或等于凸块BP(参考图3)的宽度,但本发明不限于此。
再次参照图3,当在截面视图中观察时,屏蔽构件SCM可以具有与焊盘电极PE之间的间隙和/或凸块BP之间的间隙相对应的宽度。焊盘电极PE之间的间隙可以等于或不同于凸块BP之间的间隙。例如,焊盘电极PE之间的间隙可以小于凸块BP之间的间隙,但本发明不限于此。
屏蔽构件SCM的宽度可以小于或等于凸块BP之间的间隙。在这种情况下,屏蔽构件SCM的宽度可以大于或等于焊盘电极PE之间的间隙。然而,本发明不限于此,并且例如,屏蔽构件SCM的宽度可以小于焊盘电极PE之间的间隙。
作为另一示例,凸块BP之间的间隙和屏蔽构件SCM的宽度可以各自是大约16μm,并且焊盘电极PE之间的间隙可以是大约16μm或更小,但本发明不限于此。
当在截面图中观察时,每个屏蔽构件SCM具有基本上等于凸块BP之间的间隙的宽度,使得在热压接合工艺期间,可以防止导电颗粒CP渗入凸块BP之间。例如,焊盘电极PE可以具有小于或等于凸块BP的厚度的厚度。厚度可以是表面高度。例如,焊盘电极PE的厚度的范围可以为大约1μm至大约2μm,并且凸块BP的厚度可以是大约8μm。因此,如上所述,当由于焊盘电极PE之间的空间比凸块BP之间的空间相对窄而限制导电颗粒CP的流动时,导电颗粒CP的密度增加,使得导电颗粒CP的收集率可以增加。然而,本发明不限于此,并且焊盘电极PE可以具有小于凸块BP的厚度的厚度,并且焊盘电极PE之间的空间可以比凸块BP之间的空间相对窄。
开口OP可以形成在屏蔽构件SCM之间。开口OP可以是空的或者可以填充有与第一基体树脂BS1和/或第二基体树脂BS2相同或相似的树脂。类似于图12中示出的多个坝PDAM,当在平面图中观察时,多个屏蔽构件SCM可以具有矩形棱柱形状或圆柱形状,但本发明不限于此。
多个导电颗粒CP可以如图5中所示以变化的间隔分散在第一基体树脂BS1中,或者可以如图8中所示被分散成在第一基体树脂BS1中具有恒定间隔和布置。多个导电颗粒CP中的一些可以设置为在厚度方向上与多个屏蔽构件SCM重叠,并且多个导电颗粒CP的其余部分可以设置为在厚度方向上与多个屏蔽构件SCM不重叠,但本发明不限于此。类似于图11,多个导电颗粒CP可以被设置为在厚度方向上与多个屏蔽构件SCM不重叠。
多个屏蔽构件SCM中的每一个可以由具有高耐热性的绝缘材料制成。多个屏蔽构件SCM可以由与多个坝PDAM基本上相同或相似的材料制成,但本发明不限于此。多个屏蔽构件SCM中的每一个可以包括非导电铁磁材料、或非导电材料和铁磁材料的混合物。多个屏蔽构件SCM中的每一个可以包括非导电材料围绕铁磁材料的磁性复合结构。非导电铁磁材料可以包括稀土元素,例如钆(Gd)、铽(Tb)、镝(Dy)和钬(Ho)中的至少一种。
屏蔽层SCL的厚度可以小于或等于导电颗粒CP的直径。因此,在热压接合工艺期间,导电颗粒CP可以在多个焊盘电极PE和凸块BP之间被很好地捕获。再次参照图3,导电颗粒层CL和非导电层NCL可以分别具有与焊盘电极PE和凸块BP相对应的厚度。例如,导电颗粒层CL的厚度可以小于非导电层NCL的厚度,但本发明不限于此。
除了屏蔽层SCL之外,图13的实施例与图4至图7的实施例基本上相同或相似,并且因此已经省略此处对图13的实施例的重复描述。
图14是示出根据本发明的实施例的粘合剂构件的截面图。
参照图14,与图13的实施例不同,粘合剂构件ADc的非导电层NCL还可以包括分散在第二基体树脂BS2中的多个非导电颗粒NCP。
多个非导电颗粒NCP可以如图5中所示不规则地分散在第二基体树脂BS2中,或者可以如图8中所示被分散成在第二基体树脂BS2中具有恒定的趋势。例如,多个非导电颗粒NCP可以以变化的间隔和变化的布置设置,或者多个非导电颗粒NCP可以以恒定的间隔和恒定的布置设置。
如上所述,在热压接合工艺期间,多个非导电颗粒NCP可以降低多个导电颗粒CP的流动性并增加多个焊盘电极PE和多个凸块BP之间的粘合强度。
除了多个非导电颗粒NCP之外,图14的实施例与图13的实施例基本上相同或相似,并且因此已经省略了此处对图14的实施例的重复描述。
图15是示出根据本发明的实施例的显示装置的制造方法的流程图。图16和图17是示出根据本发明的实施例的显示装置的制造方法的步骤的图。
参照图1至图15,根据本发明的实施例的显示装置的制造方法可以包括在显示面板DP的多个焊盘电极PE和驱动构件DM的多个凸块BP之间插入粘合剂构件AD。粘合剂构件AD包括:包括多个导电颗粒CP的导电颗粒层CL、设置在导电颗粒层CL上的非导电层NCL以及设置在导电颗粒层CL与非导电层NCL之间并且包括多个屏蔽构件SCM的屏蔽层SCL。该方法还包括对显示面板DP和驱动构件DM中的至少一个进行热压接合以允许多个导电颗粒CP在屏蔽层SCL的多个屏蔽构件SCM之间流动。
在显示面板DP和驱动构件DM中的至少一个上进行热压接合可以包括阻止设置在多个焊盘电极PE之间的导电颗粒CP的流动。
在插入粘合剂构件AD之后,显示装置的制造方法还可以包括通过使用磁场将粘合剂构件AD与显示面板DP和驱动构件DM对准。
使用磁场对准粘合剂构件AD包括使用由被提供在保持驱动构件DM的加压构件PM中的磁体所提供的磁场在至少一个方向上移动粘合剂构件AD。
然而,显示装置的制造方法不限于上述示例,并且可以省略上述步骤中的至少一些或者可以参照本说明书的其他描述还包括至少一个其他操作。
在下文中,将参照图16和图17详细描述显示装置的制造方法。
参照图16,可以制备显示面板DP、驱动构件DM和用于将显示面板DP接合到驱动构件DM的粘合剂构件AD。显示面板DP和驱动构件DM中的每一个可以由台ST(参考图26)和/或卡盘保持和固定。例如,显示面板DP和驱动构件DM中的每一个可以被保持并固定到图26中示出的具有真空孔加压构件的台ST或加压构件PM,但本发明不限于此。
如图1至图3和图16中所示,多个焊盘电极PE可以设置在显示面板DP的基底SUB上。粘合剂构件AD可以位于多个焊盘电极PE上方,并且驱动构件DM可以位于粘合剂构件AD上方。多个凸块BP可以设置在驱动芯片IC上,并且多个凸块BP可以对准成在厚度方向上与多个焊盘电极PE重叠。在这种情况下,在粘合剂构件AD中,可以将导电颗粒层CL设置为面对多个焊盘电极PE,并且可以将非导电层NCL设置为面对多个凸块BP。
参照图16,在完成显示面板DP、驱动构件DM和粘合剂构件AD的对准之后,可以进行加压接合工艺。加压接合工艺可以是热压接合工艺。例如,如图16中所示,为显示面板DP和驱动构件DM之间的热压接合提供热的加压构件PM可以行进到驱动构件DM的上部并对驱动构件DM加压,从而进行驱动构件DM与基底SUB之间的热压接合。
参照图16和图17,由于由加压构件PM提供的热和压力,粘合剂构件AD的第一基体树脂BS1和第二基体树脂BS2可以熔化。由于第一基体树脂BS1和第二基体树脂BS2的熔化,可以形成填充基底SUB和驱动构件DM之间的空间的填充构件FM。
多个导电颗粒CP和多个非导电颗粒NCP可以在熔化的填充构件FM(第一基体树脂BS1和第二基体树脂BS2)中流动。多个导电颗粒CP中的一些可以插入在焊盘电极PE和凸块BP之间,从而将焊盘电极PE电连接到凸块BP。在这种情况下,如图17中所示,多个非导电颗粒NCP中的一些也可以插入在焊盘电极PE和凸块BP之间。
如上所述,粘合剂构件AD可以包括多个非导电颗粒NCP以限制多个导电颗粒CP的流动,从而允许在焊盘电极PE和凸块BP之间捕获基本上恒定数量的导电颗粒CP。因此,即使当在多个焊盘电极PE和多个凸块BP具有精细间距,例如,范围为大约1μm至大约30μm的间距时,也可以保持焊盘电极PE和凸块BP之间的连接面积、电阻和导电性能。
当第一基体树脂BS1和第二基体树脂BS2熔化时,多个导电颗粒CP和多个非导电颗粒NCP可以在多个焊盘电极PE和多个凸块BP之间流动。如图17中所示,由于至少一个非导电颗粒NCP位于导电颗粒CP之间、导电颗粒CP和焊盘电极PE之间和/或导电颗粒CP和凸块BP之间,因此能防止由于多个导电颗粒CP之间相对紧密的接触而导致的电路短路现象。
此后,填充构件FM(第一基体树脂BS1和第二基体树脂BS2)可以被固化,并且然后可以完成基底SUB和驱动构件DM之间的接合。
图18和图19是示出根据本发明的实施例的显示装置的制造方法的步骤的图。
参照图18和图19,包括多个坝PDAM的粘合剂构件ADa可以用于将显示面板DP和驱动构件DM接合在一起。
参照图18,包括多个坝PDAM的粘合剂构件ADa可以插入在基底SUB和驱动构件DM之间。如图18中所示,粘合剂构件ADa可以对准成使得多个坝PDAM在厚度方向和/或加压方向上与多个焊盘电极PE和多个凸块BP不重叠。例如,多个坝PDAM可以对准成位于多个焊盘电极PE之间和/或多个凸块BP之间。
此后,类似于图16和图17中示出的实施例,加压构件PM可以朝向驱动构件DM下降以在基底SUB、粘合剂构件ADa和驱动构件DM上进行热压接合。在这种情况下,第一基体树脂BS1和第二基体树脂BS2可以由于加压构件PM提供的热和压力而熔化,以形成填充构件FM,并且多个坝PDAM可能不被熔化以保持它们的形状。因此,多个导电颗粒CP的流动受到多个坝PDAM的限制,使得多个导电颗粒CP不流入多个焊盘电极PE之间和/或多个凸块BP之间,并且使得多个导电颗粒CP中的大部分可以在多个焊盘电极PE和多个凸块BP之间被捕获。
在图19中,示出了一个导电颗粒CP在焊盘电极PE和凸块BP之间被捕获的示例,但位于焊盘电极PE和凸块BP之间的导电颗粒CP的数量不限于此。
除了包括多个坝PDAM的粘合剂构件ADa的应用之外,图18和图19的实施例与图16和图17的实施例基本上相同或相似,并且因此已经省略了此处对图18和图19的实施例的重复描述。
图20至图22是示出根据本发明的实施例的显示装置的制造方法的步骤的图。
参照图20至图22,包括屏蔽层SCL的粘合剂构件ADb可以用于显示面板DP和驱动构件DM之间的接合。
参照图20,粘合剂构件ADb可以对准成使得导电颗粒层CL面对多个焊盘电极PE,并且非导电层NCL面对多个凸块BP。粘合剂构件ADb可以对准成使得多个屏蔽构件SCM在厚度方向和/或加压方向上与多个焊盘电极PE和多个凸块BP不重叠。例如,多个屏蔽构件SCM可以设置为与多个焊盘电极PE之间的间隙和多个凸块BP之间的间隙重叠。如上所述,一个屏蔽构件SCM的宽度可以与凸块BP之间的间隙和/或焊盘电极PE之间的间隙基本上相同。焊盘电极PE、屏蔽构件SCM之间的开口OP和凸块BP可以在厚度方向和/或加压方向上彼此重叠。
参照图21,在对准完成之后,加压构件PM可以朝向驱动构件DM下降,从而在基底SUB、粘合剂构件ADb和驱动构件DM上进行热压接合。在这种情况下,第一基体树脂BS1和第二基体树脂BS2可能由于加压构件PM提供的热和压力而熔化,并且多个屏蔽构件SCM可能不熔化以保持它们的形状。当开口OP为空时,熔化的第一基体树脂BS1和/或熔化的第二基体树脂BS2可以与导电颗粒CP一起流入开口OP。当开口OP填充有与第一基体树脂BS1和/或第二基体树脂BS2相同或相似的树脂时,随着熔化的树脂的流动,导电颗粒CP可以流入开口OP中。
如图21中所示,在热压接合工艺中,每个屏蔽构件SCM具有与凸块BP之间的间隙和/或焊盘电极PE之间的间隙基本上相同的宽度,使得导电颗粒CP可以流入开口OP中以在焊盘电极PE和凸块BP之间被捕获。另外,分散在多个焊盘电极PE之间的间隙中的导电颗粒CP可以被屏蔽构件SCM阻挡以防止导电颗粒CP渗入多个凸块BP之间的空间。因此,可以预先防止由于导电颗粒CP的不必要流动而导致的开路故障和/或短路故障。
参照图22,在通过第一基体树脂BS1(参考图4)和第二基体树脂BS2(参考图4)的熔化形成的填充构件FM固化之后,可以完成显示面板DP和驱动构件DM之间的加压接合。在这种情况下,如图22中所示,多个导电颗粒CP中的一些可以位于开口OP中以将焊盘电极PE电连接到凸块BP,并且多个导电颗粒CP的其余部分可以仅位于多个焊盘电极PE之间和屏蔽层SCL(参考图14)下方。例如,多个导电颗粒CP中其余的导电颗粒CP在设置在多个焊盘电极PE之间的间隙中的同时可以位于屏蔽构件SCM和基底SUB之间。然而,本发明不限于此,并且例如,导电颗粒CP可以设置在屏蔽层SCL上方的多个凸块BP之间。
除了包括屏蔽层SCL的粘合剂构件ADb的应用之外,图20至图22的实施例与图16和图17的实施例基本上相同或相似,并且因此已经省略了此处对图20至图22的实施例的重复描述。
图23至图25是示出根据本发明的实施例的显示装置的制造方法的步骤的图。
参照图23至图25,包括屏蔽层SCL的粘合剂构件ADc可以用于将显示面板DP和驱动构件DM接合在一起。多个非导电颗粒NCP分散在非导电层NCL中。
参照图24和图25,由于热压接合工艺,多个非导电颗粒NCP可以在多个凸块BP之间和屏蔽层SCL上方流动。例如,非导电颗粒NCP在设置在多个凸块BP之间的间隙中的同时,可以位于屏蔽构件SCM和驱动芯片IC之间。因此,如上所述,由于防止了多个凸块BP之间的短路故障并且增加了填充构件FM(第一基体树脂BS1和第二基体树脂BS2)中的颗粒密度,因此可以限制多个导电颗粒CP的流动。
除了多个非导电颗粒NCP分散在非导电层NCL中的粘合剂构件ADc的应用之外,图23至图25的实施例与图20至图22的实施例基本上相同或相似,并且因此已经省略此处对图23至图25的实施例的重复描述。
图26至图29是示出根据本发明的实施例的显示装置的制造方法的步骤的图。
参照图26至图29,包括屏蔽层SCL的粘合剂构件ADd可以用于将显示面板DP和驱动构件DM接合在一起,并且屏蔽层SCL的屏蔽构件SCM可以包括非导电磁性材料。在这种情况下,非导电层NCL可以仅由第二基体树脂BS2制成,但本发明不限于此。类似于图23的实施例,非导电层NCL可以包括多个非导电颗粒NCP(参考图4)。
参照图26,可以制备显示面板DP和驱动构件DM。在这种情况下,显示面板DP可以保持在包括真空孔ST_H的台ST上并且由于形成在真空孔ST_H中的负压而被固定。驱动构件DM可以由包括真空孔PM_H的加压构件PM的下端保持并固定到加压构件PM的下端。例如,加压构件PM可以包括用于夹持驱动构件DM的夹持构件或夹持单元。
在显示面板DP和驱动构件DM的保持完成之后,粘合剂构件ADd可以被加压构件PM拾取。例如,加压构件PM可以包括具有磁体的磁体构件MM或具有用于产生磁场的线圈的磁场产生装置。粘合剂构件ADd可以被磁力和/或磁场拾取,磁力和/或磁场由磁体构件MM或磁场产生装置产生以作用在屏蔽构件SCM的非导电铁磁材料上。
尽管已经在图26中示出了包括不同极性(N极和S极)的矩形形状的磁体构件MM,但本发明不限于此。例如,磁体构件MM可以包括圆柱形形状和/或U形形状。作为另一示例,磁体构件MM可以包括多个磁体,并且粘合剂构件ADd可以由于作用在多个磁体中的每一个的相同极性之间的磁力(例如,磁场)和/或由于作用在不同极性之间的磁力(例如,磁场)对准。
参照图27,在拾取粘合剂构件ADd之后,可以进行粘合剂构件ADd的对准。由于磁场,可以进行对准。例如,由于磁体的磁场而产生的磁力作用在粘合剂构件ADd的屏蔽构件SCM上,使得粘合剂构件ADd可以移动。例如,在至少一个方向上,例如可以在图27的水平方向上移动磁体或包括磁体的加压构件PM,并且由于磁体在对应于磁体的移动方向的方向(例如,在图27的水平方向上)上的移动,加压构件PM的下端上的粘合剂构件ADd可以移动。
通过上述对准,粘合剂构件ADd的屏蔽构件SCM可以对准成在厚度方向和/或加压方向上与多个凸块BP不重叠。因此,如上所述,可以防止导电颗粒层CL的多个导电颗粒CP在屏蔽层SCL上方流动。
参照图28,在完成粘合剂构件ADd的对准之后,加压构件PM可以朝向基底SUB下降以在驱动构件DM和显示面板DP上进行热压接合工艺。由于热压接合工艺,多个导电颗粒CP的流动与图21中描述的流动相同。
参照图29,在通过第一基体树脂BS1和第二基体树脂BS2的熔化形成的填充构件FM固化之后,可以完成显示面板DP和驱动构件DM之间的加压接合。如上所述,由于粘合剂构件ADd包括屏蔽层SCL,所以导电颗粒CP可以流入开口OP中以在焊盘电极PE和凸块BP之间被捕获,并且可以预先防止由于导电颗粒CP的不必要的流动而导致的开路故障和/或短路故障。
根据根据本发明的实施例的粘合剂构件、显示装置和显示装置的制造方法,能防止由于在接合期间导电颗粒CP的流动而导致的缺陷。
根据本发明的效果不限于以上举例说明的内容,并且本发明可以包括更多的各种效果。
尽管已经参照本发明的实施例描述了本发明,但本领域普通技术人员将理解,在不脱离本发明的精神和范围的情况下,可以对实施例进行形式和细节上的各种改变。
Claims (10)
1.一种粘合剂构件,其中,所述粘合剂构件包括:
导电颗粒层,包括多个导电颗粒;
非导电层,设置在所述导电颗粒层上;以及
屏蔽层,插入在所述导电颗粒层和所述非导电层之间并且包括多个彼此间隔开的屏蔽构件。
2.根据权利要求1所述的粘合剂构件,其中,
所述非导电层包括多个非导电颗粒,并且所述多个非导电颗粒中的每一个包括弹性颗粒和设置在所述弹性颗粒上的粘合剂涂层,并且
其中,所述非导电层的厚度大于所述导电颗粒层的厚度。
3.根据权利要求1所述的粘合剂构件,其中,
所述多个屏蔽构件插入在显示面板的多个焊盘电极之间、以及在配置为驱动所述显示面板的像素电路的驱动构件的多个凸块之间,并且
所述多个屏蔽构件中的每一个的宽度小于或等于所述多个凸块之间的间隙的宽度。
4.根据权利要求1所述的粘合剂构件,其中,
所述多个导电颗粒中的至少一个设置为在厚度方向上与所述多个屏蔽构件重叠。
5.根据权利要求1所述的粘合剂构件,其中,
所述多个屏蔽构件中的每一个包括耐热材料,并且
其中,所述多个屏蔽构件中的每一个包括非导电铁磁材料。
6.一种显示装置,其中,所述显示装置包括:
显示面板;
驱动构件,配置为驱动所述显示面板;以及
粘合剂构件,插入在所述显示面板和所述驱动构件之间,
其中,所述粘合剂构件包括:
导电颗粒层,包括多个导电颗粒;
非导电层,设置在所述导电颗粒层上;以及
屏蔽层,插入在所述导电颗粒层和所述非导电层之间并且包括多个彼此间隔开的屏蔽构件。
7.根据权利要求6所述的显示装置,其中,
所述非导电层包括多个非导电颗粒,并且
所述多个非导电颗粒中的每一个包括弹性颗粒和至少部分地围绕所述弹性颗粒的涂层。
8.根据权利要求6所述的显示装置,其中,
所述非导电层的厚度大于所述导电颗粒层的厚度,并且
其中,所述多个导电颗粒中的至少一个设置为在厚度方向上与所述多个屏蔽构件重叠。
9.根据权利要求6所述的显示装置,其中,
所述驱动构件包括多个凸块,并且
所述多个屏蔽构件中的每一个的宽度小于或等于所述多个凸块之间的间隙的宽度。
10.一种显示装置的制作方法,其中,所述制作方法包括:
在显示面板的多个焊盘电极与驱动构件的多个凸块之间插入粘合剂构件,其中,所述粘合剂构件包括:导电颗粒层;非导电层,设置在所述导电颗粒层上;以及屏蔽层,设置在所述导电颗粒层与所述非导电层之间并且包括多个屏蔽构件,其中,所述导电颗粒层包括多个导电颗粒;并且
对所述显示面板或所述驱动构件中的至少一个进行热压接合,使得所述多个导电颗粒中的多个第一导电颗粒在所述屏蔽层的所述多个屏蔽构件之间流动。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210000997A KR20220099200A (ko) | 2021-01-05 | 2021-01-05 | 접착 부재, 표시 장치 및 표시 장치 제조 방법 |
KR10-2021-0000997 | 2021-01-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114716918A true CN114716918A (zh) | 2022-07-08 |
Family
ID=82218993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111609881.3A Pending CN114716918A (zh) | 2021-01-05 | 2021-12-27 | 粘合剂构件、显示装置和显示装置的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US11923330B2 (zh) |
KR (1) | KR20220099200A (zh) |
CN (1) | CN114716918A (zh) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100979349B1 (ko) | 2007-12-31 | 2010-08-31 | 주식회사 효성 | 재작업성이 향상된 2층 구조의 이방성 도전 필름 |
KR20100010694A (ko) | 2008-07-23 | 2010-02-02 | 주식회사 효성 | 3층 이방성 도전 필름 및 이의 제조방법 |
US20160333232A1 (en) * | 2014-01-24 | 2016-11-17 | 3M Innovative Properties Company | Electrically conductive adhesive tapes and articles therefrom |
CN103811102A (zh) | 2014-02-19 | 2014-05-21 | 上海和辉光电有限公司 | 各向异性导电膜及其制造方法 |
KR101595696B1 (ko) | 2015-04-02 | 2016-02-19 | 주식회사 이녹스 | 비전도성 접착필름용 조성물 및 이를 포함하는 비전도성 접착필름 |
KR20160128536A (ko) * | 2015-04-28 | 2016-11-08 | 한국과학기술원 | 고정된 도전볼 폴리머 필름층을 포함한 이방성 전도 필름 및 그 제조방법 |
KR20170130003A (ko) * | 2016-05-17 | 2017-11-28 | 삼성디스플레이 주식회사 | 이방성 도전 필름을 포함하는 표시 장치 및 이방성 도전 필름의 제조 방법 |
KR102605475B1 (ko) | 2016-06-24 | 2023-11-23 | (주)이녹스첨단소재 | 비전도성 접착필름용 조성물 및 이를 포함하는 비전도성 접착필름 |
KR20180061877A (ko) * | 2016-11-30 | 2018-06-08 | 엘지디스플레이 주식회사 | 이방성 도전필름 및 이를 포함하는 표시장치 |
KR101776584B1 (ko) * | 2017-06-28 | 2017-09-12 | 한국과학기술원 | 고정된 도전볼 폴리머 필름층을 포함한 이방성 전도 필름 및 그 제조방법 |
US10775890B2 (en) * | 2017-09-27 | 2020-09-15 | Apple Inc. | Electronic device having a piezoelectric body for friction haptics |
US10585482B2 (en) * | 2017-09-27 | 2020-03-10 | Apple Inc. | Electronic device having a hybrid conductive coating for electrostatic haptics |
KR20210114596A (ko) * | 2020-03-10 | 2021-09-24 | 삼성디스플레이 주식회사 | 표시장치 |
-
2021
- 2021-01-05 KR KR1020210000997A patent/KR20220099200A/ko active Search and Examination
- 2021-09-17 US US17/477,655 patent/US11923330B2/en active Active
- 2021-12-27 CN CN202111609881.3A patent/CN114716918A/zh active Pending
-
2023
- 2023-12-27 US US18/397,105 patent/US20240128224A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US11923330B2 (en) | 2024-03-05 |
US20240128224A1 (en) | 2024-04-18 |
US20220216172A1 (en) | 2022-07-07 |
KR20220099200A (ko) | 2022-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107527937B (zh) | 显示装置及其制造方法以及包括其的电子设备 | |
JP5311531B2 (ja) | 半導体チップの実装された表示パネル | |
US11957009B2 (en) | Display device having circuit member stably bonded onto display substrate | |
CN107546242B (zh) | 显示设备 | |
US20230301150A1 (en) | Display device | |
CN114716918A (zh) | 粘合剂构件、显示装置和显示装置的制造方法 | |
CN112885852A (zh) | 显示面板、显示面板的制备方法和显示装置 | |
US11764231B2 (en) | Display device and method for manufacturing the same | |
US20220208941A1 (en) | Display device and method of manufacturing the same | |
US20220199749A1 (en) | Display device and method of manufacturing the same | |
CN218456645U (zh) | 显示装置 | |
US20230290751A1 (en) | Anisotropic conductive film and display device including same | |
CN220935485U (zh) | 显示装置 | |
US11825600B2 (en) | Printed circuit board, display device, and manufacturing method of display device | |
EP4109225A1 (en) | Display device | |
US20230130868A1 (en) | Display device including semiconductor light emitting device | |
CN114196335A (zh) | 粘合构件、显示设备和显示设备的制造方法 | |
KR20220169981A (ko) | 표시 장치 및 이의 제조 방법 | |
KR20230164798A (ko) | 표시 장치 | |
CN117412631A (zh) | 显示装置和用于提供显示装置的方法 | |
CN115207038A (zh) | 显示装置 | |
CN112698523A (zh) | 制造显示模块的方法 | |
CN117897817A (zh) | 包括半导体发光器件的显示装置及其制造方法 | |
CN117425379A (zh) | 显示装置和制造显示装置的方法 | |
CN112445033A (zh) | 显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |