CN114695037B - 减少tem校正器系统中的热磁场噪声 - Google Patents
减少tem校正器系统中的热磁场噪声 Download PDFInfo
- Publication number
- CN114695037B CN114695037B CN202111647066.6A CN202111647066A CN114695037B CN 114695037 B CN114695037 B CN 114695037B CN 202111647066 A CN202111647066 A CN 202111647066A CN 114695037 B CN114695037 B CN 114695037B
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- Prior art keywords
- corrector
- corrector system
- electrically insulating
- insulating material
- optical element
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- 230000003287 optical effect Effects 0.000 claims abstract description 71
- 230000005405 multipole Effects 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 41
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 19
- 230000009467 reduction Effects 0.000 claims description 11
- 229910010293 ceramic material Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 12
- 230000004075 alteration Effects 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 10
- 238000012937 correction Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 101100001674 Emericella variicolor andI gene Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/145—Combinations of electrostatic and magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04926—Lens systems combined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
- H01J2237/1516—Multipoles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/139859 | 2020-12-31 | ||
| US17/139,859 US11437216B2 (en) | 2020-12-31 | 2020-12-31 | Reduction of thermal magnetic field noise in TEM corrector systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114695037A CN114695037A (zh) | 2022-07-01 |
| CN114695037B true CN114695037B (zh) | 2025-02-14 |
Family
ID=78851077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111647066.6A Active CN114695037B (zh) | 2020-12-31 | 2021-12-30 | 减少tem校正器系统中的热磁场噪声 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11437216B2 (https=) |
| EP (1) | EP4030461A1 (https=) |
| JP (1) | JP7457687B2 (https=) |
| KR (2) | KR102781260B1 (https=) |
| CN (1) | CN114695037B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119104172B (zh) * | 2024-11-08 | 2025-12-12 | 国网浙江省电力有限公司舟山供电公司 | 基于热磁噪声信号的电缆中间接头温度测量方法及系统 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690093A (zh) * | 2018-07-06 | 2020-01-14 | Fei 公司 | 具有改进的成像分辨率的电子显微镜 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6586746B1 (en) * | 2000-09-27 | 2003-07-01 | International Business Machines Corporation | Multipole electrostatic e-beam deflector |
| WO2002037526A1 (en) * | 2000-11-02 | 2002-05-10 | Ebara Corporation | Electron beam apparatus and method for manufacturing semiconductor device comprising the apparatus |
| JP3896080B2 (ja) * | 2000-12-12 | 2007-03-22 | 株式会社荏原製作所 | 電子線装置及び該装置を用いた半導体デバイス製造方法 |
| JP4008827B2 (ja) | 2003-01-22 | 2007-11-14 | 株式会社東芝 | 荷電ビーム制御方法、これを用いた半導体装置の製造方法および荷電ビーム装置 |
| US6940080B2 (en) * | 2002-03-28 | 2005-09-06 | Kabushiki Kaisha Toshiba | Charged particle beam lithography system, lithography method using charged particle beam, method of controlling charged particle beam, and method of manufacturing semiconductor device |
| US7420164B2 (en) * | 2004-05-26 | 2008-09-02 | Ebara Corporation | Objective lens, electron beam system and method of inspecting defect |
| JP2006139958A (ja) * | 2004-11-10 | 2006-06-01 | Toshiba Corp | 荷電ビーム装置 |
| US7550739B2 (en) * | 2006-03-30 | 2009-06-23 | Tokyo Electron Limited | Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate |
| JP5623719B2 (ja) * | 2008-10-06 | 2014-11-12 | 日本電子株式会社 | 荷電粒子線装置の色収差補正装置及びその補正方法 |
| JP6324241B2 (ja) * | 2014-07-07 | 2018-05-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置および収差補正器 |
| JP2017010671A (ja) | 2015-06-18 | 2017-01-12 | 日本電子株式会社 | ライナーチューブ、および電子顕微鏡 |
| JP2018098268A (ja) * | 2016-12-08 | 2018-06-21 | 株式会社ニューフレアテクノロジー | ブランキング偏向器及びマルチ荷電粒子ビーム描画装置 |
| US10825644B1 (en) * | 2019-07-25 | 2020-11-03 | Fei Company | Corrector transfer optics for Lorentz EM |
-
2020
- 2020-12-31 US US17/139,859 patent/US11437216B2/en active Active
-
2021
- 2021-12-14 EP EP21214240.0A patent/EP4030461A1/en active Pending
- 2021-12-21 KR KR1020210183740A patent/KR102781260B1/ko active Active
- 2021-12-28 JP JP2021214089A patent/JP7457687B2/ja active Active
- 2021-12-30 CN CN202111647066.6A patent/CN114695037B/zh active Active
-
2022
- 2022-08-03 US US17/880,624 patent/US11915904B2/en active Active
-
2025
- 2025-03-10 KR KR1020250030602A patent/KR102913382B1/ko active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690093A (zh) * | 2018-07-06 | 2020-01-14 | Fei 公司 | 具有改进的成像分辨率的电子显微镜 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7457687B2 (ja) | 2024-03-28 |
| US11437216B2 (en) | 2022-09-06 |
| EP4030461A1 (en) | 2022-07-20 |
| US20220392736A1 (en) | 2022-12-08 |
| KR102781260B1 (ko) | 2025-03-14 |
| US11915904B2 (en) | 2024-02-27 |
| KR102913382B1 (ko) | 2026-01-14 |
| KR20220097254A (ko) | 2022-07-07 |
| JP2022105317A (ja) | 2022-07-13 |
| CN114695037A (zh) | 2022-07-01 |
| US20220208507A1 (en) | 2022-06-30 |
| KR20250039346A (ko) | 2025-03-20 |
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