CN114657533A - 一种在Mo衬底上制备具有规则晶型的纳米金刚石颗粒的方法 - Google Patents
一种在Mo衬底上制备具有规则晶型的纳米金刚石颗粒的方法 Download PDFInfo
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- CN114657533A CN114657533A CN202210360654.XA CN202210360654A CN114657533A CN 114657533 A CN114657533 A CN 114657533A CN 202210360654 A CN202210360654 A CN 202210360654A CN 114657533 A CN114657533 A CN 114657533A
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- 239000002113 nanodiamond Substances 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000002245 particle Substances 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 title claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 238000009210 therapy by ultrasound Methods 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 4
- 230000001788 irregular Effects 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- 239000000725 suspension Substances 0.000 description 4
- 239000000090 biomarker Substances 0.000 description 2
- 238000005474 detonation Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Geology (AREA)
- Plasma & Fusion (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202210360654.XA CN114657533B (zh) | 2022-04-07 | 2022-04-07 | 一种在Mo衬底上制备具有规则晶型的纳米金刚石颗粒的方法 |
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CN202210360654.XA CN114657533B (zh) | 2022-04-07 | 2022-04-07 | 一种在Mo衬底上制备具有规则晶型的纳米金刚石颗粒的方法 |
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CN114657533A true CN114657533A (zh) | 2022-06-24 |
CN114657533B CN114657533B (zh) | 2023-04-28 |
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CN202210360654.XA Active CN114657533B (zh) | 2022-04-07 | 2022-04-07 | 一种在Mo衬底上制备具有规则晶型的纳米金刚石颗粒的方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106367727A (zh) * | 2016-09-06 | 2017-02-01 | 武汉工程大学 | 一种利用掩膜法制备带自支撑框架的金刚石真空窗口的方法 |
CN106637400A (zh) * | 2016-09-30 | 2017-05-10 | 浙江工业大学 | 一种Si‑V发光的纳米金刚石晶粒及其制备方法 |
CN107059120A (zh) * | 2017-05-09 | 2017-08-18 | 中国电子科技集团公司第四十六研究所 | 一种利用方形槽镶嵌式衬底托抑制多晶金刚石生长的方法 |
CN108977881A (zh) * | 2018-08-31 | 2018-12-11 | 中南钻石有限公司 | 一种抑制单晶金刚石棱边多晶化的方法 |
CN110670035A (zh) * | 2019-10-11 | 2020-01-10 | 陕西科技大学 | 一种Cu基CVD金刚石热沉片及其制备方法 |
CN111441037A (zh) * | 2019-03-08 | 2020-07-24 | 上海征世科技有限公司 | 一种用于微波等离子体沉积金刚石膜装置中的刀具托盘 |
US20220084793A1 (en) * | 2020-09-13 | 2022-03-17 | Sigma Carbon Technologies | System for growth of one or more crystalline materials |
-
2022
- 2022-04-07 CN CN202210360654.XA patent/CN114657533B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106367727A (zh) * | 2016-09-06 | 2017-02-01 | 武汉工程大学 | 一种利用掩膜法制备带自支撑框架的金刚石真空窗口的方法 |
CN106637400A (zh) * | 2016-09-30 | 2017-05-10 | 浙江工业大学 | 一种Si‑V发光的纳米金刚石晶粒及其制备方法 |
CN107059120A (zh) * | 2017-05-09 | 2017-08-18 | 中国电子科技集团公司第四十六研究所 | 一种利用方形槽镶嵌式衬底托抑制多晶金刚石生长的方法 |
CN108977881A (zh) * | 2018-08-31 | 2018-12-11 | 中南钻石有限公司 | 一种抑制单晶金刚石棱边多晶化的方法 |
CN111441037A (zh) * | 2019-03-08 | 2020-07-24 | 上海征世科技有限公司 | 一种用于微波等离子体沉积金刚石膜装置中的刀具托盘 |
CN110670035A (zh) * | 2019-10-11 | 2020-01-10 | 陕西科技大学 | 一种Cu基CVD金刚石热沉片及其制备方法 |
US20220084793A1 (en) * | 2020-09-13 | 2022-03-17 | Sigma Carbon Technologies | System for growth of one or more crystalline materials |
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CB03 | Change of inventor or designer information |
Inventor after: Zhu Jiaqi Inventor after: Liang Ying Inventor after: Liu Kang Inventor after: Li Yicun Inventor after: Zhang Sen Inventor after: Zhang Yumin Inventor before: Zhu Jiaqi Inventor before: Liang Ying Inventor before: Liu Kang Inventor before: Li Yicun Inventor before: Zhang Sen |
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Effective date of registration: 20231121 Address after: 450008 Intersection of Longyuan East 7th Street, Longhu Central North Road, Zhengdong New District, Zhengzhou City, Henan Province Patentee after: Zhengzhou Research Institute of Harbin Institute of Technology Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Patentee before: HARBIN INSTITUTE OF TECHNOLOGY |
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