CN114641808A - 纹路识别模组、其制作方法及显示装置 - Google Patents
纹路识别模组、其制作方法及显示装置 Download PDFInfo
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- CN114641808A CN114641808A CN202080002097.3A CN202080002097A CN114641808A CN 114641808 A CN114641808 A CN 114641808A CN 202080002097 A CN202080002097 A CN 202080002097A CN 114641808 A CN114641808 A CN 114641808A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 585
- 239000011347 resin Substances 0.000 claims description 86
- 229920005989 resin Polymers 0.000 claims description 86
- 230000009467 reduction Effects 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 25
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000007641 inkjet printing Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 239000004568 cement Substances 0.000 abstract description 4
- 238000005187 foaming Methods 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 39
- 238000010586 diagram Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/005—Diaphragms
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/10—Image acquisition
- G06V10/12—Details of acquisition arrangements; Constructional details thereof
- G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
- G06V10/145—Illumination specially adapted for pattern recognition, e.g. using gratings
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/10—Image acquisition
- G06V10/12—Details of acquisition arrangements; Constructional details thereof
- G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
- G06V10/147—Details of sensors, e.g. sensor lenses
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/123—Optical louvre elements, e.g. for directional light blocking
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
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Abstract
一种纹路识别模组(100)、其制作方法及显示装置，在纹路识别模组(100)中的基底(1)上制作完成光学传感结构(2)后直接制作结构相对简单的至少两层遮光层(31)和透光层(32)即可达到较好的准直效果，且器件结构较轻薄，可以降低器件的加工工艺难度。避免采用在纹路识别模组(100)之上采用光学胶(OCA)(300)贴合准直结构(3)的方式带来的起泡等影响良率的问题。并且，由于在光学传感结构(2)之上直接制作膜层形成准直结构(3)，因此，可以采用阵列基板之上膜层制作通用的设备完成准直结构(3)的制作，无需增加新的制作设备。
Description
PCT国内申请，说明书已公开。
Claims (39)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/117533 WO2022061670A1 (zh) | 2020-09-24 | 2020-09-24 | 纹路识别模组、其制作方法及显示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114641808A true CN114641808A (zh) | 2022-06-17 |
| CN114641808B CN114641808B (zh) | 2024-04-12 |
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ID=80845999
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080002097.3A Active CN114641808B (zh) | 2020-09-24 | 2020-09-24 | 纹路识别模组、其制作方法及显示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220336510A1 (zh) |
| CN (1) | CN114641808B (zh) |
| DE (1) | DE112020007197T5 (zh) |
| WO (1) | WO2022061670A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210005453A (ko) * | 2019-07-05 | 2021-01-14 | 삼성디스플레이 주식회사 | 표시 장치 |
| US20230306778A1 (en) * | 2022-03-23 | 2023-09-28 | Omnivision Technologies, Inc. | Optical fingerprint sensor with high aspect-ratio metal aperture structures |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109271829A (zh) * | 2017-07-17 | 2019-01-25 | 金佶科技股份有限公司 | 取像装置 |
| CN209729912U (zh) * | 2019-06-20 | 2019-12-03 | 信利光电股份有限公司 | 一种设有屏下光学指纹模组的oled显示装置 |
| CN111240031A (zh) * | 2018-11-28 | 2020-06-05 | 上海箩箕技术有限公司 | 光准直器及其形成方法、指纹传感器模组 |
| CN111291719A (zh) * | 2020-03-03 | 2020-06-16 | 北京迈格威科技有限公司 | 指纹识别装置、显示面板、设备及指纹识别方法 |
| CN111564506A (zh) * | 2020-05-20 | 2020-08-21 | 京东方科技集团股份有限公司 | 光敏传感器及其制备方法、电子设备 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190066433A (ko) * | 2017-12-05 | 2019-06-13 | 삼성전자주식회사 | 마이크로 홀이 형성된 차광 부재를 포함하는 전자 장치 |
-
2020
- 2020-09-24 WO PCT/CN2020/117533 patent/WO2022061670A1/zh active Application Filing
- 2020-09-24 CN CN202080002097.3A patent/CN114641808B/zh active Active
- 2020-09-24 US US17/417,918 patent/US20220336510A1/en active Pending
- 2020-09-24 DE DE112020007197.9T patent/DE112020007197T5/de active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109271829A (zh) * | 2017-07-17 | 2019-01-25 | 金佶科技股份有限公司 | 取像装置 |
| CN111240031A (zh) * | 2018-11-28 | 2020-06-05 | 上海箩箕技术有限公司 | 光准直器及其形成方法、指纹传感器模组 |
| CN209729912U (zh) * | 2019-06-20 | 2019-12-03 | 信利光电股份有限公司 | 一种设有屏下光学指纹模组的oled显示装置 |
| CN111291719A (zh) * | 2020-03-03 | 2020-06-16 | 北京迈格威科技有限公司 | 指纹识别装置、显示面板、设备及指纹识别方法 |
| CN111564506A (zh) * | 2020-05-20 | 2020-08-21 | 京东方科技集团股份有限公司 | 光敏传感器及其制备方法、电子设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022061670A1 (zh) | 2022-03-31 |
| CN114641808B (zh) | 2024-04-12 |
| DE112020007197T5 (de) | 2023-04-20 |
| US20220336510A1 (en) | 2022-10-20 |
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