CN114624245B - Optical device and method for realizing asynchronous equal-optical path imaging detection of both end faces and both sides of semiconductor crystal grains - Google Patents

Abstract

The invention relates to an optical instrument in the field of semiconductors, in particular to an optical device and method for realizing asynchronous imaging detection of two ends and two sides of a semiconductor crystal grain with the same optical path. , a telecentric imaging lens, a four-sided image composite prism assembly, a four-group relay prism assembly, a semiconductor die and a glass object turntable, the four-sided image composite prism assembly is located on the optical axis of the telecentric imaging lens; the detection device The method simplifies the structural complexity of the screening machine system and reduces the cost of the screening machine system.

Description

Optical device and method for realizing asynchronous equal-optical path imaging detection of both end faces and both sides of semiconductor die

technical field

The invention relates to an optical instrument in the field of semiconductors, in particular to an optical device and method for realizing asynchronous and equal optical path imaging detection of both end faces and both sides of semiconductor crystal grains.

Background technique

The detection of surface defects of semiconductor refrigerating device crystal grains is a necessary quality control method in the manufacturing process of semiconductor refrigerating devices. The existing published patents propose a variety of optical path imaging detection methods for realizing double-sided semiconductor crystal grains, but the patents that have been proposed so far The methods (such as patent application numbers 201911369257.3, 202010133044.7, 202010250856.X, 202021124017.5) are only applicable to the imaging detection of the adjacent two sides or opposite sides of the semiconductor die. If the detection of the four sides of the semiconductor die is required, two Only the inspection station and two sets of inspection equipment can obtain the imaging inspection of the four sides of the semiconductor die.

Invention content:

In view of the above-mentioned problems of the prior art, the present invention provides an optical device and method for realizing asynchronous and equal optical path imaging detection of both end faces and both sides of a semiconductor die, which simplifies the structural complexity of the screening machine system, The cost of the screening machine system is reduced.

The present invention realizes the optical device for asynchronous and equal optical path imaging detection of both end faces and two sides of semiconductor crystal grains. Four groups of image relay prism assemblies, semiconductor crystal grains and glass object carousels, the four-sided image composite prism assembly is located on the optical axis of the telecentric imaging lens;

The four groups of relay prism assemblies are respectively the first group of relay prism assemblies, the second group of relay prism assemblies, the third group of relay prism assemblies and the fourth group of relay prism assemblies, wherein the first group of relay prism assemblies is the same as the third group of relay prism assemblies. The three groups of relay prism assemblies are symmetric about the first symmetry center plane, wherein the second group of image relay prism assemblies and the fourth group of image relay prism assemblies are symmetrical about the second symmetry center plane, and the first symmetry center plane is symmetric with the second symmetry center The intersection line of the face coincides with the optical axis;

The first group of relay prism assemblies and the third group of relay prism assemblies each include a first right-angle relay prism and a second right-angle relay prism that are adjacently arranged up and down, and the first right-angle relay prism The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided imaging composite prism assembly, the second right-angle surface of the first right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the first right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the first right angle relay prism is a total reflection surface;

The first right angle surface of the second right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the first right angle relay prism, and the second right angle surface of the second right angle relay prism is parallel. And close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the second right-angle relay prism is a total reflection surface;

The second group of relay prism assemblies and the fourth group of relay prism assemblies each include a third right-angle relay prism and a fourth right-angle relay prism, which are adjacently arranged up and down, and the first right-angle relay prism of the third right-angle relay prism is The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided image composite prism assembly, the second right-angle surface of the third right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the third right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the third right-angle relay prism is a total reflection surface;

The first right angle surface of the fourth right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the third right angle relay prism, and the second right angle surface of the fourth right angle relay prism is parallel. And away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle relay prism is close to the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the fourth right-angle relay prism is a total reflection surface;

The four-sided imaging composite prism assembly is in the shape of a cuboid, and a regular tetrahedral-shaped groove is arranged in its lower body. The wall surface of the groove is a total reflection surface, and the four sidewall surfaces of the four-sided imaging composite prism are the imaging input. The sky surface of the four-sided composite prism is the imaging output surface;

The semiconductor die is supported by the glass carousel and rotates therewith, and moves under the fourth right-angle relay prism and in a direction perpendicular to the optical axis.

Further, the above-mentioned second right-angle relay prism and the fourth right-angle relay prism rotate by an angle θ, θ=1-45 degrees, so that the slope of the second right-angle relay prism and the fourth right-angle relay prism is telecentric. The optical axis of the imaging lens forms an included angle of 45-θ degrees.

Further, the above-mentioned four-sided image composite prism assembly is formed by splicing four relay prisms, and the relay prisms are all formed by cutting a triangular prism, and the cutting surface passes through a point on the first edge of the triangular prism and the triangular prism. At the lower end points of the two edges, the first edges of the four relay prisms are close to each other to form a four-sided composite prism assembly.

Further, the distance d=0.5-1.0mm between the lower end of the above-mentioned second right-angle relay prism or the fourth right-angle relay prism and the sky surface of the semiconductor crystal grain, and the distance of the second right-angle relay prism or the fourth right-angle relay prism is The distance between the lower end and the semiconductor die is WD=42-65mm.

Further, the above θ=1-5 degrees.

The method of the invention for realizing the non-synchronized optical path imaging detection of the two end faces and the two sides of the semiconductor crystal grain is characterized in that: a camera, a telecentric imaging lens, a four-sided image composite prism assembly, a four-sided imaging composite prism assembly, A group of relay prism assemblies, semiconductor crystal grains and a glass object-carrying turntable, the four-sided image composite prism assembly is located on the optical axis of the telecentric imaging lens;

The four groups of relay prism assemblies are respectively the first group of relay prism assemblies, the second group of relay prism assemblies, the third group of relay prism assemblies and the fourth group of relay prism assemblies, wherein the first group of relay prism assemblies is the same as the third group of relay prism assemblies. The three groups of relay prism assemblies are symmetric about the first symmetry center plane, wherein the second group of image relay prism assemblies and the fourth group of image relay prism assemblies are symmetrical about the second symmetry center plane, and the first symmetry center plane is symmetric with the second symmetry center The intersection line of the face coincides with the optical axis;

The first group of relay prism assemblies and the third group of relay prism assemblies each include a first right-angle relay prism and a second right-angle relay prism that are adjacently arranged up and down, and the first right-angle relay prism The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided imaging composite prism assembly, the second right-angle surface of the first right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the first right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the first right angle relay prism is a total reflection surface;

The first right angle surface of the second right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the first right angle relay prism, and the second right angle surface of the second right angle relay prism is parallel. And close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the second right-angle relay prism is a total reflection surface;

The second group of relay prism assemblies and the fourth group of relay prism assemblies each include a third right-angle relay prism and a fourth right-angle relay prism, which are adjacently arranged up and down, and the first right-angle relay prism of the third right-angle relay prism is The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided image composite prism assembly, the second right-angle surface of the third right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the third right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the third right-angle relay prism is a total reflection surface;

The first right angle surface of the fourth right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the third right angle relay prism, and the second right angle surface of the fourth right angle relay prism is parallel. And away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle relay prism is close to the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the fourth right-angle relay prism is a total reflection surface;

The four-sided imaging composite prism assembly is in the shape of a cuboid, and a regular tetrahedral-shaped groove is arranged in its lower body. The wall surface of the groove is a total reflection surface, and the four sidewall surfaces of the four-sided imaging composite prism are the imaging input. The sky surface of the four-sided composite prism is the imaging output surface;

The semiconductor die is supported by the glass object turntable and rotates therewith, and moves under the fourth right-angle relay prism and in a direction perpendicular to the optical axis;

When the semiconductor die is located on the left side of the detection device, when the distance between its front end face in the traveling direction and a group of fourth right angle relay prisms is a given working distance WD, the front end face passes through the group of fourth right angle relay prisms. , the third right-angle relay prism and the four-sided image composite prism assembly are imaged on the camera sensor after image transfer, and the image is the first image;

When the semiconductor die moves to the center of the field of view just below the optical axis of the telecentric imaging lens, the two sides of the semiconductor die are respectively subjected to two sets of oppositely arranged second right-angle relay prisms, first right-angle relay prisms and four-sided image formation. After the composite prism assembly is transferred, an image is formed on the camera sensor, and the image is a second image;

When the semiconductor die is located on the right side of the detection device, when the distance between its rear end face in the traveling direction and the other group of fourth right angle relay prisms is a given working distance WD, the rear end faces pass through the fourth right angle relay prism respectively. , the third right-angle relay prism and the four-sided composite prism assembly are imaged on the camera sensor after image transfer, and the image is the third image;

By stacking the first image, the second image and the third image, the imaging of the front and rear surfaces and the two side surfaces in the traveling direction of the conductor die is formed, that is, the imaging detection of the two end surfaces and the two side surfaces of the semiconductor die is realized.

Further, the above-mentioned second right-angle relay prism and the fourth right-angle relay prism rotate by an angle θ, θ=1-45 degrees, so that the slope of the second right-angle relay prism and the fourth right-angle relay prism is telecentric. The optical axis of the imaging lens forms an included angle of 45-θ degrees;

When the semiconductor die is located on the left side of the detection device, when the distance between its front end face in the traveling direction and a group of fourth right angle relay prisms is a given working distance WD, the front end face passes through the group of fourth right angle relay prisms. , the third right-angle relay prism and the four-sided image composite prism assembly are imaged on the camera sensor after image transfer, and the image is the first image;

When the semiconductor die moves to the center of the field of view just below the optical axis of the telecentric imaging lens, the two sides of the semiconductor die are respectively subjected to two sets of oppositely arranged second right-angle relay prisms, first right-angle relay prisms and four-sided image formation. After the composite prism assembly is transferred, an image is formed on the camera sensor, and the image is a second image;

When the semiconductor die is located on the right side of the detection device, when the distance between its rear end face in the traveling direction and the other group of fourth right angle relay prisms is a given working distance WD, the rear end faces pass through the fourth right angle relay prism respectively. , the third right-angle relay prism and the four-sided composite prism assembly are imaged on the camera sensor after image transfer, and the image is the third image;

By stacking the first image, the second image and the third image, the imaging of the front and rear surfaces and the two side surfaces in the traveling direction of the conductor die is formed, that is, the imaging detection of the two end surfaces and the two side surfaces of the semiconductor die is realized.

The invention realizes the advantages of the optical device and method for the asynchronous equal-optical path imaging detection of the two ends of the semiconductor crystal grain and the two sides:

1) The present invention realizes a detection station for detecting two end faces and two sides of a moving crystal grain by using a four-sided image composite prism assembly and four groups of relay prism assemblies, which simplifies the structural complexity of the system, Improve the detection efficiency of the system and reduce the cost of the detection system;

2) The second right-angle relay prism and the fourth right-angle relay prism used in this detection device are installed above the glass turntable and the crystal to be tested, and do not need to be in contact with the surface of the crystal to be tested, so that the two ends of the crystal to be tested can be connected to the two sides. Dynamic detection of each side;

3) The detection device adds a station to detect the opposite sides of the crystal grains (the sky surface and the bottom surface), which can realize the simultaneous imaging detection of the six sides of the crystal grains on one screening machine, effectively reducing the proportion of missed inspections.

Description of drawings

Figures 1 and 2 are schematic diagrams of the structure of an existing device for detecting opposite surfaces of a semiconductor die;

3 and 4 are schematic diagrams of the structure of the existing semiconductor die adjacent surface detection device;

FIG. 5 is a schematic three-dimensional structure diagram of an embodiment of the device of the present invention;

Fig. 6 is the sectional structure schematic diagram of the second symmetry center plane Y of Fig. 5;

Fig. 7 is the partial view of Fig. 6;

Fig. 8 is the cross-sectional structural schematic diagram of the first symmetry center plane X of Fig. 5;

Figure 9 is a partial view of Figure 8;

FIG. 10 is a schematic structural diagram of another embodiment of FIG. 9 (that is, the fourth right-angle relay prism is rotated by an angle θ relative to the fourth right-angle relay prism of FIG. 9 );

FIG. 11 is a schematic structural diagram of another embodiment of FIG. 7 (that is, the second right-angle relay prism is rotated by an angle θ relative to the second right-angle relay prism of FIG. 7 );

Figure 12 is a schematic three-dimensional structure of a four-sided image composite prism assembly;

Fig. 13 is a three-dimensional schematic diagram of a relay prism in Fig. 12;

FIG. 14 is a first image of the semiconductor die captured by the camera target surface.

FIG. 15 is a second image of the semiconductor die captured by the camera target surface.

FIG. 16 is a third image of the semiconductor die captured by the camera target surface.

FIG. 17 is an image of both end faces and both side faces of a semiconductor die formed by combining three images.

Detailed ways

The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

As shown in Fig. 5-17, the present invention realizes an optical device for optical path imaging detection of non-synchronized two sides and two sides of a semiconductor die. A camera 1, a telecentric imaging lens 2, and a four-sided image are sequentially arranged in the direction of the optical path of the optical device. The composite prism assembly 3, the four groups of relay prism assemblies K, the semiconductor crystal grains 6 and the glass object turntable 7, the four-sided image composite prism assembly 3 is located on the optical axis A of the telecentric imaging lens.

The semiconductor die 6 is in the shape of a cuboid or a cube, and includes a front face 6a, a rear face 6b, two side faces 6c and 6d, a top face and a bottom face. The detection of 6c and 6d; the semiconductor die 6 is supported and rotated by the glass carrier turntable 7, the glass carrier turntable 7 can be continuously or intermittently driven by a motor or the like, and the camera 1 can be a CMOS camera or a CCD camera, etc. .

The four groups of relay prism assemblies K are respectively the first group of relay prism assemblies K1, the second group of relay prism assemblies K2, the third group of relay prism assemblies K3 and the fourth group of relay prism assemblies K4, wherein the first group of relay prism assemblies K4 The image prism assembly K1 and the third group of relay prism assemblies K3 are symmetrical about the first symmetry center plane X, wherein the second group of image transfer prism assemblies K2 and the fourth group of image relay prism assemblies K4 are symmetrical about the second symmetry center plane Y, the first The intersecting line of a central plane of symmetry and the second central plane of symmetry coincides with the optical axis A.

The first group of relay prism assemblies K1 and the third group of relay prism assemblies K3 both include a first right-angle relay prism 4a and a second right-angle relay prism 4b arranged adjacently up and down (as shown in Figures 6 and 7 ). ), the first right angle surface 401 of the first right angle relay prism 4a is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface 301 of the four-sided image composite prism assembly (the four-sided image composite prism assembly is in the shape of a cube, It has four imaging input surfaces 301, the two opposite surfaces of the four imaging input surfaces 301 are also symmetrical about the first symmetry center plane X or the second symmetry center plane Y, the first right angle surface 401 and an imaging input surface 301 parallel), the second right angle surface 402 of the first right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the second right angle surface 402 is also perpendicular to the aforementioned an imaging input surface 301, the first right angle relay prism The inclined surface 403 of the first right angle relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees, and the inclined surface 403 of the first right angle relay prism is a total reflection surface.

The first right angle surface 404 of the second right angle relay prism 4b is perpendicular to the optical axis of the telecentric imaging lens and is close to and parallel to the second right angle surface 402 of the first right angle relay prism. The second right angle surface 405 is parallel and close to the optical axis of the telecentric imaging lens, the second right angle surface 405 is also perpendicular to the aforementioned first right angle surface 404, and the inclined surface 406 of the second right angle relay prism faces away from the optical axis of the telecentric imaging lens And form an included angle of 45 degrees with it, and the inclined surface of the second right-angle relay prism is a total reflection surface.

The second group of relay prism assemblies K2 and the fourth group of relay prism assemblies K4 both include a third right-angle relay prism 5a and a fourth right-angle relay prism 5b that are adjacently arranged up and down (as shown in Figures 8 and 9 ). ), the first right angle surface 501 of the third right angle turning prism 5a is parallel to the optical axis of the telecentric imaging lens and is close to and parallel to an imaging input surface 301 of the quadrilateral image composite prism assembly, the third right angle turning The second right angle surface 502 of the image prism is perpendicular to the optical axis of the telecentric imaging lens, the inclined surface 503 of the third right angle relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the third right angle relay prism The inclined surface is a total reflection surface.

The first right angle surface 504 of the fourth right angle relay prism 5b is perpendicular to the optical axis of the telecentric imaging lens and is close to and parallel to the second right angle surface 502 of the third right angle relay prism. The fourth right angle relay prism The second right angle surface 505 is parallel to and away from the optical axis of the telecentric imaging lens, the second right angle surface 505 is also perpendicular to the aforementioned first right angle surface 504, and the inclined surface 506 of the fourth right angle relay prism is close to the optical axis of the telecentric imaging lens and Instead of forming an included angle of 45 degrees, the inclined surface of the fourth right-angle relay prism is a total reflection surface.

The tetrahedral image composite prism assembly is in the shape of a cuboid or a cube, and a groove 302 in the shape of a regular tetrahedron is arranged in its lower body. The side wall surface is the imaging input surface 301, the two opposite surfaces of the four imaging input surfaces 301 are also symmetrical about the first symmetry center plane X or the second symmetry center plane Y, and the sky surface 304 of the four-sided imaging composite prism is the imaging output surface , the sky surface 304 of the four-sided composite prism is perpendicular to the optical axis A.

The semiconductor die is supported by the glass carousel and rotates therewith, and moves under the fourth right-angle relay prism 5b and in a direction perpendicular to the optical axis.

The above-mentioned right-angle surfaces, imaging input surfaces, and imaging output surfaces can transmit light, and the wall surfaces of each inclined surface or groove can be coated with a total reflection film or coated with a total reflection film to achieve its total reflection function.

The above-mentioned first right angle relay prism, the second right angle relay prism, the third right angle relay prism and the fourth right angle relay prism are arranged up and down, and can be flush or misaligned in the left and right directions, as shown in Figure 7. The first right-angle relay prism and the second right-angle relay prism shown in Figure 9 are misaligned in the left and right directions, and the third right-angle relay prism and the fourth right-angle relay prism shown in Figure 9 are not misaligned in the left and right directions (dislocation is allowed for a certain distance), The specific relative positions can be debugged to realize that the two end faces and the two side faces of the semiconductor die 6 can be collected on the camera sensor to obtain images.

In another embodiment, in order to better convert off-axis objects into on-axis objects, so as to obtain imaging in the central area of the camera sensor, the above-mentioned second right-angle relay prism and fourth right-angle relay prism are relative to the previous embodiment (ie The embodiment shown in Figures 6-9) can rotate by an angle θ, the above θ can be 1-45 degrees, preferably θ is 1-5 degrees, so that the second right-angle relay prism and the fourth right-angle relay The inclined plane of the prism forms an included angle of 45-θ with the optical axis of the telecentric imaging lens, for example, θ=3 degrees, the inclined planes of the second right angle relay prism and the fourth right angle relay prism form 42 degrees with the optical axis of the telecentric imaging lens angle.

In the above-mentioned embodiment, the tetrahedral image composite prism assembly 3 is in the shape of a cuboid or a cube, and a groove 302 in the shape of a regular tetrahedron is arranged in its lower body. The wall surface 303 of the groove is a total reflection surface, and the tetrahedral image composite prism is formed The four sidewall surfaces are the imaging input surface 301, and the sky surface 304 of the four-sided imaging composite prism is the imaging output surface; the specific four-sided imaging composite prism assembly 3 can be composed of four relay prisms 305. , 13), when the four-sided composite prism assembly is a cube, it is better to use four identical relay prisms to be assembled, and the four identical relay prisms are all cut from right-angle prisms. That is, the wall surface 303 of the groove formed later passes through a point 306 on the first edge of the triangular prism and the lower end point 307 of the other two edges of the triangular prism. The first edge and the prism surface of the four relay prisms are mutually Adhere closely to form a four-sided composite prism assembly 3 (as shown in Figures 12 and 13).

The semiconductor die 6 is supported and rotated by a glass object turntable 7, which can be driven by a motor or the like to rotate, and the semiconductor die 6 is below the second and fourth right-angle relay prisms and perpendicular to the The direction of the optical axis moves.

The distance d (including the d1 and d2 shown in the figure) between the lower ends of the second right-angle relay prism and the fourth right-angle relay prism and the sky surface of the semiconductor crystal grain is 0.5-1.0mm. When measuring the station, an embodiment Yes, the distance between the lower end of the second right angle relay prism and the fourth right angle relay prism and the semiconductor die WD (including WD1, WD2) = 42-65mm, where as shown in Figure 10 WD1 = 65mm, the WD1 is a semiconductor When the distance between the die and the lower end of the fourth right-angle relay prism is equal to 65mm, the camera starts to capture the end face image of the semiconductor die, as shown in Figure 11, WD2=42mm, the WD2 is when the semiconductor die is located directly under the camera, the second right-angle turn The distance between the lower end of the prism and the side of the semiconductor die.

In the present application, the distance between the images on the two end faces and the two side faces from the center of the imaging sensor of the CMOS camera 1 is adjusted by adjusting the position of the composite prism assembly 3 of the device up and down, so as to image the off-axis point to the image close to the sensor surface of the camera. The central area of the field of view.

The direction of the light path is:

As shown in Figure 5-11, when the semiconductor die is located on the left side of the detection device, the distance between the front end face 6a of the semiconductor die in the traveling direction and a set of fourth right-angle relay prisms is a given working distance WD1=65mm When the front end surface 6a passes through the group of fourth right-angle relay prisms 5b (incident from the second right-angle surface 505 of the fourth right-angle relay prism 5b, reflected by the inclined surface 506 of the fourth right-angle relay prism 5b, and then rotated from the fourth right angle The first right angle surface 504 of the image prism 5b exits), the third right angle relay prism 5a (incident from the second right angle surface 502 of the third right angle relay prism 5a, reflected by the inclined surface 503 of the third right angle relay prism 5a, The third right-angle relay prism 5a exits from the first right-angle surface 501) and the four-sided image composite prism assembly 3 (incident from an imaging input surface 301, reflected by the wall surface 303, and exited from the sky surface 304) and then transmitted through the telecentric Imaging lens 2, and finally image on the camera sensor, which is the first image (as shown in Figure 14);

As shown in Figure 5-13, when the semiconductor die moves to the center of the field of view just below the optical axis of the telecentric imaging lens, the two sides 6c and 6d of the semiconductor die are respectively passed through two sets of oppositely arranged second right-angle relay prisms. 4b (incident from the second right angle surface 405 of the second right angle relay prism 4b, reflected by the inclined surface 406 of the second right angle relay prism 4b, and exit from the first right angle surface 404 of the second right angle relay prism 4b), the first Right angle relay prism 4a (incident from the second right angle surface 402 of the first right angle relay prism 4a, reflected by the inclined surface 403 of the first right angle relay prism 4a, and exit from the first right angle surface 401 of the first right angle relay prism 4a ) and the four-sided imaging composite prism assembly 3 (incident from an imaging input surface 301, reflected by the wall surface 303, and exited from the sky surface 304), and then pass through the telecentric imaging lens 2, and finally form an image on the camera sensor, the image is In the second image (as shown in Figure 15), one image of the semiconductor die in the station forms an image of two sides;

As shown in Figure 5-13, when the semiconductor die is located on the right side of the detection device, the distance between the rear end face 6b of the semiconductor die in the traveling direction and a group of fourth right-angle relay prisms is a given working distance WD1=65mm , the rear end surface 6b also passes through the group of fourth right-angle relay prisms 5b (incident from the second right-angle surface 505 of the fourth right-angle relay prism 5b, reflected by the inclined surface 506 of the fourth right-angle relay prism 5b, The first right angle surface 504 of the relay prism 5b exits), the third right angle relay prism 5a (incident from the second right angle surface 502 of the third right angle relay prism 5a, and reflected by the inclined surface 503 of the third right angle relay prism 5a, emerges from the first right-angle surface 501 of the third right-angle relay prism 5a) and the four-sided composite prism assembly 3 (incident from an imaging input surface 301, reflected by the wall surface 303, and exited from the sky surface 304) and then transmits the image through the far Cardiac imaging lens 2, which is finally imaged on the camera sensor, which is the third image (as shown in Figure 16);

By stacking the first image, the second image and the third image, the imaging of the front and rear faces and the two side faces in the traveling direction of the conductor die is formed (as shown in Figure 17), that is, the two end faces of the semiconductor die and the Imaging detection on both sides.

When the second right-angle relay prism and the fourth right-angle relay prism rotate by 3 degrees (as shown in Figures 10 and 11 ), the inclinations of the second right-angle relay prism and the fourth right-angle relay prism are formed with telecentricity The optical axis of the lens forms an included angle of 42; in which the optical path is as described above; by rotating the second right-angle relay prism and the fourth right-angle relay prism by an angle, the off-axis object can be converted into an on-axis object, Thereby, the image can be better obtained in the central area of the camera sensor.

The invention realizes the advantages of the optical device and method for the asynchronous equal-optical path imaging detection of the two ends of the semiconductor crystal grain and the two sides:

1) The present invention realizes a detection station for detecting two end faces and two sides of a moving crystal grain by using a four-sided image composite prism assembly and four groups of relay prism assemblies, which simplifies the structural complexity of the system, Improve the detection efficiency of the system and reduce the cost of the detection system;

2) The second right-angle relay prism and the fourth right-angle relay prism used in this detection device are installed above the glass turntable and the crystal to be tested, and do not need to be in contact with the surface of the crystal to be tested, so that the two ends of the crystal to be tested can be connected to the two sides. Dynamic detection of each side;

3) The detection device adds a station to detect the opposite sides of the crystal grains (the sky surface and the bottom surface), which can realize the simultaneous imaging detection of the six sides of the crystal grains on one screening machine, effectively reducing the proportion of missed inspections.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them; although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand: The specific embodiments of the invention are modified or some technical features are equivalently replaced; without departing from the spirit of the technical solutions of the present invention, all of them should be included in the scope of the technical solutions claimed in the present invention.

Claims (5)

1. an optical device that realizes the optical path imaging detection such as non-synchronization of both ends of semiconductor crystal grain and both sides, it is characterized in that: be provided with camera, telecentric imaging lens, four-sided image composite prism successively on the optical path direction of optical device an assembly, four groups of relay prism assemblies, semiconductor crystal grains and a glass object-carrying turntable, the four-sided image composite prism assembly is located on the optical axis of the telecentric imaging lens; The four groups of relay prism assemblies are respectively the first group of relay prism assemblies, the second group of relay prism assemblies, the third group of relay prism assemblies and the fourth group of relay prism assemblies, wherein the first group of relay prism assemblies is the same as the third group of relay prism assemblies. The three groups of relay prism assemblies are symmetric about the first symmetry center plane, wherein the second group of image relay prism assemblies and the fourth group of image relay prism assemblies are symmetrical about the second symmetry center plane, and the first symmetry center plane is symmetric with the second symmetry center The intersection line of the face coincides with the optical axis; The first group of relay prism assemblies and the third group of relay prism assemblies each include a first right-angle relay prism and a second right-angle relay prism that are adjacently arranged up and down, and the first right-angle relay prism The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided imaging composite prism assembly, the second right-angle surface of the first right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the first right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the first right angle relay prism is a total reflection surface; The first right angle surface of the second right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the first right angle relay prism, and the second right angle surface of the second right angle relay prism is parallel. And close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the second right-angle relay prism is a total reflection surface; The second group of relay prism assemblies and the fourth group of relay prism assemblies each include a third right-angle relay prism and a fourth right-angle relay prism, which are adjacently arranged up and down, and the first right-angle relay prism of the third right-angle relay prism is The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided image composite prism assembly, the second right-angle surface of the third right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the third right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the third right-angle relay prism is a total reflection surface; The first right angle surface of the fourth right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the third right angle relay prism, and the second right angle surface of the fourth right angle relay prism is parallel. And away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle relay prism is close to the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the fourth right-angle relay prism is a total reflection surface; The four-sided imaging composite prism assembly is in the shape of a cuboid, and a regular tetrahedral-shaped groove is arranged in its lower body. The wall surface of the groove is a total reflection surface, and the four sidewall surfaces of the four-sided imaging composite prism are the imaging input. face, two opposite faces in the four side wall faces are symmetrical with respect to the first symmetry center plane or the second symmetry center plane, and the sky plane of the four-sided image composite prism is the imaging output plane; The semiconductor die is supported by the glass object turntable and rotates therewith, and moves under the fourth right-angle relay prism and in a direction perpendicular to the optical axis; The second right-angle relay prism and the fourth right-angle relay prism rotate by an angle θ, and the θ=1-5 degrees. 2. The optical device for realizing asynchronous iso-optical path imaging detection on both ends of a semiconductor crystal grain and both sides according to claim 1, wherein the four-sided composite prism assembly is composed of four relay prisms. The relay prisms are all formed by cutting a triangular prism, and the cutting plane passes through a point on the first edge of the triangular prism and the lower end point of the other two edges of the triangular prism, and the first of the four relay prisms The edges are close to each other to form a four-sided composite prism assembly. 3. The optical device for realizing asynchronous iso-optical path imaging detection of both end faces and both sides of semiconductor crystal grains according to claim 2, characterized in that: the second right angle relay prism or the fourth right angle relay prism The distance d=0.5-1.0mm between the lower end of the second right-angle relay prism or the fourth right-angle relay prism and the semiconductor crystal grain during detection, and the distance WD=42-65mm between the lower end of the second right-angle relay prism or the fourth right-angle relay prism and the semiconductor crystal grain. 4. A method for realizing non-synchronized optical path imaging detection of both ends of a semiconductor die and both sides, characterized in that: a camera, a telecentric imaging lens, and a four-sided image composite prism assembly are sequentially arranged in the optical path direction of the optical device. , Four groups of relay prism assemblies, semiconductor crystal grains and glass object-carrying turntables, the four-sided image composite prism assemblies are located on the optical axis of the telecentric imaging lens; The four groups of relay prism assemblies are respectively the first group of relay prism assemblies, the second group of relay prism assemblies, the third group of relay prism assemblies and the fourth group of relay prism assemblies, wherein the first group of relay prism assemblies is the same as the third group of relay prism assemblies. The three groups of relay prism assemblies are symmetric about the first symmetry center plane, wherein the second group of image relay prism assemblies and the fourth group of image relay prism assemblies are symmetrical about the second symmetry center plane, and the first symmetry center plane is symmetric with the second symmetry center The intersection line of the face coincides with the optical axis; The first group of relay prism assemblies and the third group of relay prism assemblies each include a first right-angle relay prism and a second right-angle relay prism that are adjacently arranged up and down, and the first right-angle relay prism The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided imaging composite prism assembly, the second right-angle surface of the first right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the first right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the first right angle relay prism is a total reflection surface; The first right angle surface of the second right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the first right angle relay prism, and the second right angle surface of the second right angle relay prism is parallel. And close to the optical axis of the telecentric imaging lens, the inclined surface of the second right-angle relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the second right-angle relay prism is a total reflection surface; The second group of relay prism assemblies and the fourth group of relay prism assemblies each include a third right-angle relay prism and a fourth right-angle relay prism, which are adjacently arranged up and down, and the first right-angle relay prism of the third right-angle relay prism is The right-angle surface is parallel to the optical axis of the telecentric imaging lens and is close to the imaging input surface of the four-sided image composite prism assembly, the second right-angle surface of the third right-angle relay prism is perpendicular to the optical axis of the telecentric imaging lens, and the third right angle The inclined surface of the relay prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the third right-angle relay prism is a total reflection surface; The first right angle surface of the fourth right angle relay prism is perpendicular to the optical axis of the telecentric imaging lens and is close to the second right angle surface of the third right angle relay prism, and the second right angle surface of the fourth right angle relay prism is parallel. And away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle relay prism is close to the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it, and the inclined surface of the fourth right-angle relay prism is a total reflection surface; The four-sided imaging composite prism assembly is in the shape of a cuboid, and a regular tetrahedral-shaped groove is arranged in its lower body. The wall surface of the groove is a total reflection surface, and the four sidewall surfaces of the four-sided imaging composite prism are the imaging input. The sky surface of the four-sided composite prism is the imaging output surface; The semiconductor die is supported by the glass object turntable and rotates therewith, and moves under the fourth right-angle relay prism and in a direction perpendicular to the optical axis; When the semiconductor die is located on the left side of the detection device, when the distance between its front end face in the traveling direction and a group of fourth right angle relay prisms is a given working distance WD, the front end face passes through the group of fourth right angle relay prisms. , the third right-angle relay prism and the four-sided image composite prism assembly are imaged on the camera sensor after image transfer, and the image is the first image; When the semiconductor die moves to the center of the field of view just below the optical axis of the telecentric imaging lens, the two sides of the semiconductor die are respectively subjected to two sets of oppositely arranged second right-angle relay prisms, first right-angle relay prisms and four-sided image formation. After the composite prism assembly is transferred, an image is formed on the camera sensor, and the image is a second image; When the semiconductor die is located on the right side of the detection device, when the distance between its rear end face in the traveling direction and the other group of fourth right angle relay prisms is a given working distance WD, the rear end faces pass through the fourth right angle relay prism respectively. , the third right-angle relay prism and the four-sided composite prism assembly are imaged on the camera sensor after image transfer, and the image is the third image; By stacking the first image, the second image and the third image, the imaging of the front and rear faces and the two side faces in the traveling direction of the conductor die is formed, that is, the imaging detection of the two end faces and the two side faces of the semiconductor die is realized; The second right-angle relay prism and the fourth right-angle relay prism rotate by an angle θ, and the θ=1-5 degrees. 5. The method for realizing asynchronous iso-optical path imaging detection of both end faces and both sides of a semiconductor die according to claim 4, characterized in that: when the semiconductor die is located on the left side of the detection device, its front end in the traveling direction When the distance between the face and a group of fourth right-angle relay prisms is a given working distance WD, the front end face is transferred through the group of fourth right-angle relay prisms, third right-angle relay prisms and four-sided composite prism components. imaging on the sensor, the imaging is the first image; When the semiconductor die moves to the center of the field of view just below the optical axis of the telecentric imaging lens, the two sides of the semiconductor die are respectively subjected to two sets of oppositely arranged second right-angle relay prisms, first right-angle relay prisms and four-sided image formation. After the composite prism assembly is transferred, an image is formed on the camera sensor, and the image is a second image; When the semiconductor die is located on the right side of the detection device, when the distance between its rear end face in the traveling direction and the other group of fourth right angle relay prisms is a given working distance WD, the rear end faces pass through the fourth right angle relay prism respectively. , the third right-angle relay prism and the four-sided composite prism assembly are imaged on the camera sensor after image transfer, and the image is the third image; By stacking the first image, the second image and the third image, the imaging of the front and rear surfaces and the two side surfaces in the traveling direction of the conductor die is formed, that is, the imaging detection of the two end surfaces and the two side surfaces of the semiconductor die is realized.

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