CN211856382U - Detection device for simultaneous equal optical path imaging and equal illumination illumination on both sides of die - Google Patents
Detection device for simultaneous equal optical path imaging and equal illumination illumination on both sides of die Download PDFInfo
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Abstract
本实用新型晶粒双面同时等光程成像且等照度照明的检测装置,该装置包括在垂直光路方向上依次设置的相机、远心成像镜头、合像光学元件和半导体晶粒,所述合像光学元件与半导体晶粒之间的两侧部设有梯形转像棱镜,半导体晶粒的两个侧面分别通过梯形转像棱镜、合像光学元件以双光路成像在相机传感器面上不同的区域位置,本实用新型以单一的合像光学元件取代两个独立的直角转像棱镜实现双面成像光路的合像功能,该方案装配结构简单,合像光路调试更简易方便,且双面合像精度更高。
The utility model is a detection device for simultaneous equal optical path imaging and equal illumination illumination on both sides of crystal grains. The device comprises a camera, a telecentric imaging lens, a combined image optical element and a semiconductor crystal grain, which are sequentially arranged in the direction of the vertical optical path. The two sides between the imaging optical element and the semiconductor die are provided with trapezoidal relay prisms, and the two sides of the semiconductor die are respectively imaged in different areas on the camera sensor surface with double optical paths through the trapezoidal relay prism and the combining optical element. Position, the utility model replaces two independent right-angle relay prisms with a single image combination optical element to realize the image combination function of the double-sided imaging optical path. Higher precision.
Description
技术领域:Technical field:
本实用新型属于光学检测和机器视觉领域,尤其涉及一种基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置。The utility model belongs to the field of optical detection and machine vision, and in particular relates to a detection device based on imaging optical elements for simultaneous equal optical path imaging on both sides of crystal grains and equal illumination illumination.
背景技术:Background technique:
本申请人此前的申请,名称:“实现半导体晶粒相对两表面等光程成像的光学检测装置及方法”申请号:“2019113692573,其中晶粒相对两面的像在CCD传感器的合成需要两块基于全反射的直角反射棱镜(如图1所示),或一块直角双面反射棱镜(如图2所示);前者对直角反射棱镜的精密装配调试有较高的技术难度要求,后者因为需要镀制高反射反光膜及可靠性而不作为优先考虑的选项,另直角反射棱镜的45度棱边在加工过程中难免有破边缺角,相邻两个有缺陷的棱边将会影响双面像的识别与成像质量,因此寻找双面成像间隔可控且元件制造工艺性佳的方案成为必要。The applicant's previous application, title: "Optical detection device and method for realizing equal optical path imaging of semiconductor die relative to two surfaces" Application number: "2019113692573, wherein the synthesis of the images on the opposite sides of the die in the CCD sensor requires two pieces based on A right-angle reflecting prism with total reflection (as shown in Figure 1), or a right-angle double-sided reflecting prism (as shown in Figure 2); the former has higher technical difficulty requirements for the precise assembly and debugging of the right-angle reflecting prism, while the latter requires Coating high-reflection reflective film and reliability is not a priority option. In addition, the 45-degree edge of the right-angle reflective prism will inevitably have broken edges and corners during processing, and two adjacent defective edges will affect the double Face recognition and imaging quality, so it is necessary to find a solution with controllable double-sided imaging interval and good component manufacturing process.
另外,本申请人此前申请的两件专利,专利名称:“获得半导体晶粒相对两面光学检测完全等照度照明的方法”,专利申请号:“2019113692588;以及专利名称:“用于半导体晶粒双面缺陷同时检测装置的照明补偿新方法”,专利申请号:“201911315115.9,此两件专利申请提出的双面成像光路均需要在直角转像棱镜上增加设置特定的照明光学元件(光楔或直角分束棱镜)以获得双面成像等照度照明的目的,如图3a,b,c所示,图3a的照明光源系统需要一个光楔而增加了机械结构的复杂性;图3b,3c的照明光源系统需要一个直角分束棱镜因而产生50%的光能损失。In addition, the applicant has previously applied for two patents, patent title: "Method for obtaining complete equal-illuminance illumination for optical detection of opposite sides of semiconductor die", patent application number: "2019113692588; and patent title: "For semiconductor die dual A new illumination compensation method for the simultaneous detection of surface defects", patent application number: "201911315115.9, the double-sided imaging optical paths proposed in these two patent applications both require the addition of specific illumination optical elements (optical wedge or right angle) on the right-angle relay prism. beamsplitter prism) for the purpose of double-sided imaging iso-illuminance illumination, as shown in Fig. 3a, b, c, the illumination light source system of Fig. 3a requires an optical wedge and increases the complexity of the mechanical structure; the illumination of Fig. 3b, 3c The light source system requires a right angle beamsplitter prism and thus produces a 50% loss of light energy.
发明内容:Invention content:
针对上述问题,本实用新型提出了一种基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置,该半导体晶粒相对两表面等光程成像的光学检测装置以单一的合像光学元件取代两个独立的直角转像棱镜实现双面成像光路的合像功能,结构简单、调试更简易方便,且双面合像精度更高。In view of the above-mentioned problems, the present utility model proposes a detection device based on the double-sided simultaneous equal-optical path imaging and equal-illuminance illumination of the crystal grains of the image-combining optical element. A single image combining optical element replaces two independent right-angle relay prisms to realize the combined image function of the double-sided imaging optical path. The structure is simple, the debugging is easier and more convenient, and the double-sided image combining accuracy is higher.
本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置,其特征在于:包括在垂直光路方向上依次设置的相机、远心成像镜头、合像光学元件和半导体晶粒,所述合像光学元件与半导体晶粒之间的两侧部设有梯形转像棱镜,半导体晶粒的两个侧面分别通过梯形转像棱镜、合像光学元件以双光路成像在相机传感器面上不同的区域位置。The utility model is a detection device based on the simultaneous equal-optical path imaging and equal-illuminance illumination on both sides of the crystal grains of the image-combining optical element, which is characterized in that the detection device comprises a camera, a telecentric imaging lens, and an image-combining optical element, which are sequentially arranged in the direction of the vertical optical path. And the semiconductor die, the two sides between the combined imaging optical element and the semiconductor die are provided with a trapezoidal relay prism, and the two sides of the semiconductor die are respectively imaged by the trapezoidal relay prism and the combined imaging optical element with dual optical paths Different area locations on the camera sensor surface.
本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置,其特征在于:包括在垂直光路方向上依次设置的相机、远心成像镜头、合像光学元件和半导体晶粒,所述合像光学元件与半导体晶粒之间的上、下两侧设有梯形转像棱镜,半导体晶粒的天面和底面分别通过梯形转像棱镜、合像光学元件以双光路成像在相机传感器面上不同的区域位置。The utility model is a detection device based on the simultaneous equal-optical path imaging and equal-illuminance illumination on both sides of the crystal grains of the image-combining optical element, which is characterized in that the detection device comprises a camera, a telecentric imaging lens, and an image-combining optical element, which are sequentially arranged in the direction of the vertical optical path. and semiconductor crystal grains, the upper and lower sides between the combined imaging optical element and the semiconductor crystal grains are provided with trapezoidal relay prisms, and the top and bottom surfaces of the semiconductor crystal grains are respectively provided with the trapezoidal relay prisms and the combined imaging optical elements. Dual optical paths image different regions on the camera sensor surface.
进一步的,上述合像光学元件靠近相机的天面为平面,为双光路的合像输出面,该合像光学元件天面垂直于相机光轴,合像光学元件左侧平面与右侧平面分别为双光路成像输入面,且平行于相机光轴,合像光学元件远离相机且垂直于光轴的底面孔径中心为互成90度的全反射面,互成90度的全反射面构成Ⅴ形槽内全反射面。Further, the sky surface of the above-mentioned combined image optical element close to the camera is a plane, which is the combined image output surface of the dual optical paths, the sky surface of the combined image optical element is perpendicular to the optical axis of the camera, and the left plane and the right plane of the combined image optical element are respectively. It is a dual optical path imaging input surface and is parallel to the optical axis of the camera. The center of the bottom surface of the combined imaging optical element is far from the camera and perpendicular to the optical axis. The center of the aperture is a 90-degree total reflection surface, and the 90-degree total reflection surface forms a V shape. Total reflection surface inside the groove.
进一步的,上述合像光学元件为长方体状,其尺寸为20x10x20mm,其中底面的Ⅴ形槽内全反射面顶点到底面的高为5mm。Further, the above-mentioned imaging optical element is in the shape of a cuboid, and its size is 20x10x20mm, wherein the height of the apex of the total reflection surface in the V-shaped groove on the bottom surface to the bottom surface is 5mm.
进一步的,调整合像光学元件沿相机光轴方向的位置,在输出面上晶粒双面成像之间的间隔为△≈d+a=3.3mm,其中晶粒双面成像相互靠近的边缘之间的间隔d=2mm,晶粒的尺寸a=1.3mm,在输入面上晶粒待测面中心到直角反射面顶点的距离为△/2。Further, adjust the position of the imaging optical element along the optical axis of the camera, and the interval between the double-sided images of the die on the output surface is △≈d+a=3.3mm, where the edges of the double-sided images of the die that are close to each other are between the edges. The distance between them is d=2mm, the size of the grain is a=1.3mm, and the distance from the center of the grain to be measured on the input surface to the vertex of the right-angle reflection surface is △/2.
进一步的,上述合像光学元件由玻璃或光学塑料模压成形,或是两块直角反射棱镜加工胶合拼接而成,或两拼接面用光胶合方法粘结为一体。Further, the above-mentioned imaging optical element is formed by molding glass or optical plastic, or two pieces of right-angle reflecting prisms are processed and glued together, or the two spliced surfaces are bonded together by a light gluing method.
进一步的,上述梯形转像棱镜远离相机光轴一侧为小端,即为梯形转像棱镜的天面,靠近相机光轴一侧为大端,即为梯形转像棱镜的底面,梯形转像棱镜的天面与底面为光学面,两个斜面为全反射面,梯形转像棱镜底面孔径边缘的作用为转像功能,天面与底面的中间部分为照明光源的透过光路。Further, the side of the above-mentioned trapezoidal relay prism away from the optical axis of the camera is the small end, which is the sky surface of the trapezoidal relay prism, and the side close to the optical axis of the camera is the large end, which is the bottom surface of the trapezoidal relay prism. The top surface and bottom surface of the prism are optical surfaces, and the two inclined surfaces are total reflection surfaces. The function of the aperture edge of the bottom surface of the trapezoidal relay prism is the image relay function.
进一步的,上述装置设有照明光源,照明光源位于梯形转像棱镜远离相机光轴方向的一侧。Further, the above device is provided with an illumination light source, and the illumination light source is located on the side of the trapezoidal relay prism away from the direction of the optical axis of the camera.
本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测方法,其特征在于:所述基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置包括在垂直光路方向上依次设置的相机、远心成像镜头、合像光学元件和半导体晶粒,所述合像光学元件与半导体晶粒之间的两侧部设有梯形转像棱镜,半导体晶粒的两个侧面分别通过梯形转像棱镜、合像光学元件以双光路成像在相机传感器面上不同的区域位置;工作时,被照明的半导体晶粒的左侧面先后经过梯形转像棱镜两个斜面的180度转像,再经过合像光学元件的90度转像后,由远心成像镜头成像在相机传感器面的左半区域上;对于半导体晶粒的右侧面,经过另一个梯形转像棱镜两个斜面与合像光学元件后再由远心成像镜头成像到相机传感器面的右半区域上;从相机的成像面上也同时得到半导体晶粒的左侧面与右侧面的像,且半导体晶粒左侧面的像与半导体晶粒右侧面的像之间相隔一个小间距。The utility model is a detection method based on the double-sided simultaneous equal-optical path imaging and equal-illuminance illumination of the crystal grains based on the image-combining optical element. The detection device for illumination includes a camera, a telecentric imaging lens, an imaging optical element and a semiconductor die that are sequentially arranged in the direction of the vertical optical path, and trapezoidal relays are arranged on both sides between the imaging optical element and the semiconductor die. Prism, the two sides of the semiconductor die are imaged in different areas on the sensor surface of the camera with dual optical paths through the trapezoidal relay prism and the combining optical element respectively; during operation, the left side of the illuminated semiconductor die passes through the trapezoid successively. The 180-degree rotation of the two inclined surfaces of the relay prism, and then the 90-degree image rotation of the combining optical element, is imaged on the left half area of the camera sensor surface by the telecentric imaging lens; for the right side of the semiconductor die, After passing through the two inclined surfaces of another trapezoidal relay prism and combining optical elements, the telecentric imaging lens is imaged onto the right half of the sensor surface of the camera; the left side and the left side of the semiconductor die are also obtained from the imaging surface of the camera. The image on the right side of the semiconductor die is separated by a small distance from the image on the left side of the semiconductor die and the image on the right side of the semiconductor die.
本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测方法,其特征在于:所述基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置包括在垂直光路方向上依次设置的相机、远心成像镜头、合像光学元件和半导体晶粒,所述合像光学元件与半导体晶粒之间的上、下两侧设有梯形转像棱镜,半导体晶粒的天面和底面分别通过梯形转像棱镜、合像光学元件以双光路成像在相机传感器面上不同的区域位置;工作时,被照明的半导体晶粒的天面先后经过梯形转像棱镜两个斜面的180度转像,再经过合像光学元件的90度转像后,由远心成像镜头成像在相机传感器面的左半区域上;对于半导体晶粒的底面,经过另一个梯形转像棱镜两个斜面与合像光学元件后再由远心成像镜头成像到相机传感器面的右半区域上;从相机的成像面上也同时得到半导体晶粒的天面与底面的像,且半导体晶粒天面的像与半导体晶粒底面的像之间相隔一个小间距。The utility model is a detection method based on the double-sided simultaneous equal-optical path imaging and equal-illuminance illumination of the crystal grains based on the image-combining optical element. The detection device for illumination includes a camera, a telecentric imaging lens, an imaging optical element, and a semiconductor die that are sequentially arranged in the direction of the vertical optical path, and the upper and lower sides between the imaging optical element and the semiconductor die are provided with trapezoids. The relay prism, the top and bottom surfaces of the semiconductor die are respectively imaged in different areas on the camera sensor surface by the trapezoidal relay prism and the combining optical element with dual optical paths; during operation, the top surface of the illuminated semiconductor die is successively After the 180-degree rotation of the two inclined surfaces of the trapezoidal relay prism, and the 90-degree rotation of the combining optical element, the telecentric imaging lens is imaged on the left half area of the camera sensor surface; for the bottom surface of the semiconductor die, After passing through the two inclined surfaces of another trapezoidal relay prism and the combining optical element, the telecentric imaging lens is used to image the right half of the sensor surface of the camera; the top and bottom surfaces of the semiconductor die are also obtained from the imaging surface of the camera. , and there is a small distance between the image of the top surface of the semiconductor die and the image of the bottom surface of the semiconductor die.
本实用新型技术优点如下:The technical advantages of the present utility model are as follows:
①以单一的合像光学元件取代两个独立的直角转像棱镜实现双面成像光路的合像功能,该方案装配结构简单,合像光路调试更简易方便,且双面合像精度更高。①Replace two independent right-angle relay prisms with a single image combination optical element to realize the image combination function of the double-sided imaging optical path.
②合像光学元件仍然采用全反射实现转像功能,无需象单一直角双面反射棱镜那样,反射面需要镀制介质高反光膜或其它高反射膜。②The combined image optical elements still use total reflection to realize the image transfer function, and there is no need for the reflective surface to be coated with a medium high-reflection film or other high-reflection films like a single right-angle double-sided reflective prism.
③晶粒两面像之间的间隔可调可控,可通过合像光学元件沿光轴方向微调来实现。③The interval between the images on both sides of the grain is adjustable and controllable, which can be realized by fine-tuning the optical element of the combined image along the direction of the optical axis.
④梯形转像棱镜的使用简化了照明光源系统,该方案比之前专利提出的含楔形折射棱镜或直角分束棱镜的照明光源系统(图3a,3b,3c)结构更简单,装配调试更容易,能量利用率更高,且成本更低些。④ The use of the trapezoidal relay prism simplifies the illumination light source system. This solution is simpler in structure and easier to assemble and debug than the illumination light source system (Fig. Higher energy utilization and lower cost.
附图说明:Description of drawings:
图1、2、3a,3b,3c是现有对半导体晶粒表面进行光学检测的装置;Figures 1, 2, 3a, 3b, and 3c are the existing devices for optically detecting the surface of semiconductor crystal grains;
图4、4b是本实用新型对半导体晶粒两侧面进行光学检测的装置;Figures 4 and 4b are the device for optical detection of the two sides of the semiconductor die according to the present invention;
图5是合像光学元件的尺寸参数图;Fig. 5 is the size parameter diagram of the combined image optical element;
图6是梯形转像棱镜的尺寸参数图。Fig. 6 is a size parameter diagram of a trapezoidal relay prism.
具体实施方式:Detailed ways:
本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置包括在垂直光路方向上依次设置的相机1、远心成像镜头2、合像光学元件3和半导体晶粒4,半导体晶粒4可以承置在载物台5上,所述合像光学元件与半导体晶粒之间的两侧部设有梯形转像棱镜6,半导体晶粒的两个侧面401分别通过两个梯形转像棱镜6a、6b、合像光学元件3以双光路成像成像在相机1传感器面上不同的区域位置。The detection device of the present utility model based on the double-sided simultaneous equal optical path imaging and equal illumination illumination of the crystal grains of the combined imaging optical element comprises a
或者,本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置包括在垂直光路方向上依次设置的相机1、远心成像镜头2、合像光学元件3和半导体晶粒4,半导体晶粒4可以承置在载物台5上,所述合像光学元件3与半导体晶粒4之间的上、下两侧设有梯形转像棱镜6,半导体晶粒的天面402和底面403分别通过两个梯形转像棱镜6a、6b、合像光学元件3以双光路成像在相机1传感器面上不同的区域位置。Alternatively, the detection device of the present invention based on the simultaneous equal optical path imaging on both sides of the crystal grains of the combined imaging optical element and the equal illumination illumination includes a
下面具体说明合像光学元件3、梯形转像棱镜6结构。The structures of the combined image
合像光学元件靠近相机的天面301为平面,为双光路的合像输出面,该合像光学元件天面垂直于相机光轴,合像光学元件左侧平面302与右侧平面303分别为双光路成像输入面,且平行于相机光轴K,合像光学元件远离相机且垂直于光轴K的底面孔径中心为互成90度的全反射面,互成90度的全反射面构成Ⅴ形槽内全反射面。The
合像光学元件为长方体状,其尺寸为20x10x20mm,其中底面的Ⅴ形槽内全反射面顶点到底面的高为5mm;合像光学元件由玻璃或光学塑料模压成形,或是两块直角反射棱镜加工胶合拼接而成,或两拼接面用光胶合方法粘结为一体。The combined imaging optical element is in the shape of a cuboid, and its size is 20x10x20mm, of which the height of the apex of the total reflection surface in the V-shaped groove on the bottom surface to the bottom surface is 5 mm; the combined imaging optical element is molded by glass or optical plastic, or two right angle reflecting prisms It is made of glued and spliced by processing, or the two spliced surfaces are bonded together by light gluing method.
通过沿光轴方向移动合像光学元件3时,可以调节半导体晶粒两面在相机传感器上的像之间的间隔,该间隔大小的选择需要合理,太小不便于图像识别处理,太大又影响镜头的视场。By moving the imaging
本申请具有双光路合像功能的光学棱镜组件放置在成像镜头之前的适当位置上,以便在成像镜头的传感器获得期待的双面像。The optical prism assembly with the dual optical path combining function of the present application is placed in an appropriate position before the imaging lens, so as to obtain the desired double-sided image on the sensor of the imaging lens.
进一步的,调整合像光学元件沿相机光轴方向的位置,在输出面上晶粒双面成像之间的间隔为△≈d+a=3.3mm,其中晶粒双面成像相互靠近的边缘之间的间隔d=2mm,晶粒的尺寸a=1.3mm,在输入面上晶粒待测面中心到直角反射面顶点的距离为△/2。Further, adjust the position of the imaging optical element along the optical axis of the camera, and the interval between the double-sided images of the die on the output surface is △≈d+a=3.3mm, where the edges of the double-sided images of the die that are close to each other are between the edges. The distance between them is d=2mm, the size of the grain is a=1.3mm, and the distance from the center of the grain to be measured on the input surface to the vertex of the right-angle reflection surface is △/2.
梯形转像棱镜6远离相机光轴一侧为小端,即为梯形转像棱镜的天面601,靠近相机光轴一侧为大端,即为梯形转像棱镜的底面602,梯形转像棱镜的天面与底面为光学面,两个斜面603为全反射面,梯形转像棱镜底面孔径边缘的作用为转像功能,天面与底面的中间部分为照明光源的透过光路。The side of the
本申请装置设有照明光源7a、7b,照明光源位于梯形转像棱镜远离相机光轴方向的一侧;上述相机为具有传感器CCD或CMOS的相机。The device of the present application is provided with
以图4为例,本实用新型基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测方法,该检测装置包括在垂直光路方向上依次设置的相机1、远心成像镜头2、合像光学元件3和半导体晶粒4,半导体晶粒4可以承置在载物台5上,所述合像光学元件与半导体晶粒之间的两侧部设有梯形转像棱镜6,半导体晶粒的两个侧面401分别通过两个梯形转像棱镜6a、6b、合像光学元件3以双光路成像成像在相机1传感器面上不同的区域位置;工作时,被照明的半导体晶粒的左侧面先后经过梯形转像棱镜两个斜面的180度转像,再经过合像光学元件的90度转像后,由远心成像镜头成像在相机传感器面的左半区域上;对于半导体晶粒的右侧面,经过另一个梯形转像棱镜两个斜面与合像光学元件后再由远心成像镜头成像到相机传感器面的右半区域上;从相机的成像面上也同时得到半导体晶粒的左侧面与右侧面的像,且半导体晶粒左侧面的像与半导体晶粒右侧面的像之间相隔一个小间距。Taking FIG. 4 as an example, the present invention is based on a detection method for simultaneous equal optical path imaging and equal illumination illumination on both sides of the crystal grains of the combined image optical element, and the detection device comprises a
同样地,对于半导体晶粒天面与底面两相对表面的同时检测,也可以应用以上类似的检测装置,只是需要将梯形转像棱镜分别设置与半导体晶粒的天面与底面一侧,而相机1、成像镜头2及合像光学元件3则设置于半导体晶粒位于水平光路方向上,如图4b所示,本实用新型所述基于合像光学元件的晶粒双面同时等光程成像且等照度照明的检测装置包括在垂直光路方向上依次设置的相机1、远心成像镜头2、合像光学元件3和半导体晶粒4,半导体晶粒4可以承置在载物台5上,所述合像光学元件3与半导体晶粒4之间的上、下两侧设有梯形转像棱镜6,半导体晶粒的天面402和底面403分别通过两个梯形转像棱镜6a、6b、合像光学元件3以双光路成像在相机1传感器面上不同的区域位置;工作时,被照明的半导体晶粒的天面先后经过梯形转像棱镜两个斜面的180度转像,再经过合像光学元件的90度转像后,由远心成像镜头成像在相机传感器面的左半区域上;对于半导体晶粒的底面,经过另一个梯形转像棱镜两个斜面与合像光学元件后再由远心成像镜头成像到相机传感器面的右半区域上;从相机的成像面上也同时得到半导体晶粒的天面与底面的像,且半导体晶粒天面的像与半导体晶粒底面的像之间相隔一个小间距。Similarly, for the simultaneous detection of the two opposite surfaces of the top and bottom surfaces of the semiconductor die, a similar detection device can also be applied, but the trapezoidal relay prism needs to be placed on the top and bottom sides of the semiconductor die respectively, and the
本实用新型技术优点如下:The technical advantages of the present utility model are as follows:
①以单一的合像光学元件取代两个独立的直角转像棱镜实现双面成像光路的合像功能,该方案装配结构简单,合像光路调试更简易方便,且双面合像精度更高。①Replace two independent right-angle relay prisms with a single image combination optical element to realize the image combination function of the double-sided imaging optical path.
②合像光学元件仍然采用全反射实现转像功能,无需象单一直角双面反射棱镜那样,反射面需要镀制介质高反光膜或其它高反射膜。②The combined image optical elements still use total reflection to realize the image transfer function, and there is no need for the reflective surface to be coated with a medium high-reflection film or other high-reflection films like a single right-angle double-sided reflective prism.
③晶粒两面像之间的间隔可调可控,可通过合像光学元件沿光轴方向微调来实现。③The interval between the images on both sides of the grain is adjustable and controllable, which can be realized by fine-tuning the optical element of the combined image along the direction of the optical axis.
④梯形转像棱镜的使用简化了照明光源系统,该方案比之前专利提出的含楔形折射棱镜或直角分束棱镜的照明光源系统(图3a,3b,3c)结构更简单,装配调试更容易,能量利用率更高,且成本更低些。④ The use of the trapezoidal relay prism simplifies the illumination light source system. This solution is simpler in structure and easier to assemble and debug than the illumination light source system (Fig. Higher energy utilization and lower cost.
最后应当说明的是:以上实施例仅用以说明本实用新型的技术方案而非对其限制;尽管参照较佳实施例对本实用新型进行了详细的说明,所属领域的普通技术人员应当理解:依然可以对本实用新型的具体实施方式进行修改或者对部分技术特征进行等同替换;而不脱离本实用新型技术方案的精神,其均应涵盖在本实用新型请求保护的技术方案范围当中。Finally it should be noted that: the above embodiment is only used to illustrate the technical scheme of the present invention and not to limit it; although the present invention has been described in detail with reference to the preferred embodiment, those of ordinary skill in the art should understand: still The specific embodiments of the present invention can be modified or some technical features can be equivalently replaced; without departing from the spirit of the technical solutions of the present invention, all of them should be included in the scope of the technical solutions claimed in the present invention.
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CN109839357A (en) * | 2019-01-15 | 2019-06-04 | 南京矢航信息技术有限公司 | A kind of double spectrum imaging device based on CMOS image planes cutting techniques |
CN111157535A (en) * | 2020-03-01 | 2020-05-15 | 泉州师范学院 | Detection device and method for simultaneous equal optical path imaging and equal illumination illumination on both sides of crystal grains based on imaging optical elements |
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CN111157535A (en) * | 2020-03-01 | 2020-05-15 | 泉州师范学院 | Detection device and method for simultaneous equal optical path imaging and equal illumination illumination on both sides of crystal grains based on imaging optical elements |
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