CN211856382U - Detection device for crystal grain double-side simultaneous aplanatic imaging and isoluminance illumination - Google Patents
Detection device for crystal grain double-side simultaneous aplanatic imaging and isoluminance illumination Download PDFInfo
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- CN211856382U CN211856382U CN202020230481.6U CN202020230481U CN211856382U CN 211856382 U CN211856382 U CN 211856382U CN 202020230481 U CN202020230481 U CN 202020230481U CN 211856382 U CN211856382 U CN 211856382U
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Abstract
The utility model discloses the two-sided while aplanatic formation of image of crystalline grain and the detection device that waits the illumination, the device include camera, telecentric imaging lens, the image of closing optical element and the semiconductor crystalline grain that sets gradually on perpendicular light path direction, close the both sides portion between image of closing optical element and the semiconductor crystalline grain and be equipped with trapezoidal rotating image prism, two sides of semiconductor crystalline grain are respectively through trapezoidal rotating image prism, close the regional position that image optical element formed images the difference on the camera sensor face with two light paths, the utility model discloses replace two independent right angle rotating image prisms with single image of closing optical element and realize the function of closing the image of two-sided formation of image light paths, this scheme assembly structure is simple, closes the image light path debugging more simply and conveniently, and two-sided image accuracy of closing is higher.
Description
The technical field is as follows:
the utility model belongs to optical detection and machine vision field especially relate to a two-sided while aplanatic formation of image of crystalline grain and waiting detection device that illuminance was thrown light on based on close like optical element.
Background art:
the applicant's previous application, title: the application number of the optical detection device and the method for realizing the equal optical path imaging of the two opposite surfaces of the semiconductor crystal grain is as follows: "2019113692573, wherein the synthesis of the image of opposite sides of the die on the CCD sensor requires two total reflection based right angle reflecting prisms (as shown in fig. 1), or one right angle double sided reflecting prism (as shown in fig. 2); the former has higher technical difficulty requirement on precise assembly and debugging of the right-angle reflecting prism, the latter does not serve as a priority option because of the need of plating a high-reflection reflective film and reliability, in addition, the 45-degree edge of the right-angle reflecting prism has edge breaking and corner missing inevitably in the processing process, and the identification and imaging quality of a double-sided image can be influenced by two adjacent defective edges, so that a scheme with controllable double-sided imaging interval and good element manufacturing manufacturability is required to be found.
In addition, the applicant filed two patents, patent names: "method for obtaining complete equal illumination by optical detection of two opposite surfaces of semiconductor crystal grain", patent application No.: "2019113692588; and the patent name: "new method for illumination compensation of apparatus for simultaneous detection of defects on both sides of semiconductor die", patent application No.: 201911315115.9, the two-sided imaging optical paths proposed in the two patent applications require a special illumination optical element (optical wedge or right-angled beam splitter prism) to be added on the right-angled image-rotating prism for the purpose of obtaining illumination such as two-sided imaging, as shown in fig. 3a, b, and c, the illumination light source system of fig. 3a requires an optical wedge and increases the complexity of the mechanical structure; the illumination source system of fig. 3b and 3c requires a right-angle beam splitting prism and thus results in a 50% loss of light energy.
The invention content is as follows:
to the above problem, the utility model provides a detection device based on close like optical element's the two-sided while aplanatism formation of image of crystalline grain and the illumination of waiting, the optical detection device of the relative aplanatism formation of image of this semiconductor crystalline grain replaces the function of closing like of two independent right angle reprint prisms realization two-sided formation of image light paths with single close like optical element, and simple structure, debugging are more simple and easy convenient, and two-sided the accuracy of closing like is higher.
The utility model discloses two-sided while aplanatic formation of image of crystalline grain and waiting the detection device that the illumination was thrown light on based on close like optical element, its characterized in that: the imaging device comprises a camera, a telecentric imaging lens, an image combination optical element and a semiconductor crystal grain which are sequentially arranged in the direction perpendicular to an optical path, wherein trapezoidal image rotating prisms are arranged at two side parts between the image combination optical element and the semiconductor crystal grain, and two side surfaces of the semiconductor crystal grain are imaged at different area positions on the surface of a camera sensor through the trapezoidal image rotating prisms and the image combination optical element in a double optical path mode.
The utility model discloses two-sided while aplanatic formation of image of crystalline grain and waiting the detection device that the illumination was thrown light on based on close like optical element, its characterized in that: the imaging device comprises a camera, a telecentric imaging lens, an image combination optical element and a semiconductor crystal grain which are sequentially arranged in the direction perpendicular to an optical path, wherein trapezoidal image rotating prisms are arranged on the upper side and the lower side between the image combination optical element and the semiconductor crystal grain, and the top surface and the bottom surface of the semiconductor crystal grain are imaged in different area positions on the surface of a camera sensor through the trapezoidal image rotating prisms and the image combination optical element in a double-optical-path mode.
Furthermore, the top surface of the image combination optical element close to the camera is a plane and is an image combination output surface of the double light paths, the top surface of the image combination optical element is perpendicular to the optical axis of the camera, the left plane and the right plane of the image combination optical element are respectively double light path imaging input surfaces and are parallel to the optical axis of the camera, the center of the aperture of the bottom surface of the image combination optical element far away from the camera and perpendicular to the optical axis is a total reflection surface which forms 90 degrees with each other, and the total reflection surfaces which form 90 degrees with each other form a V-shaped groove inner total reflection surface.
Further, the image combining optical element has a rectangular parallelepiped shape with dimensions of 20x10x20mm, wherein the height from the vertex to the bottom of the total reflection surface in the v-shaped groove of the bottom surface is 5 mm.
Further, the position of the image combination optical element along the optical axis direction of the camera is adjusted, the interval between the double-sided imaging of the crystal grains on the output surface is delta ≈ d + a =3.3mm, wherein the interval between the edges of the double-sided imaging of the crystal grains close to each other is d =2mm, the size of the crystal grains is a =1.3mm, and the distance from the center of the to-be-measured surface of the crystal grains to the vertex of the right-angle reflecting surface on the input surface is delta/2.
Furthermore, the image combination optical element is formed by molding glass or optical plastic, or is formed by processing, gluing and splicing two right-angle reflecting prisms, or two spliced surfaces are bonded into a whole by a light gluing method.
Furthermore, the side of the trapezoidal relay prism, which is far from the optical axis of the camera, is a small end, namely, the top surface of the trapezoidal relay prism, the side of the trapezoidal relay prism, which is close to the optical axis of the camera, is a large end, namely, the bottom surface of the trapezoidal relay prism, the top surface and the bottom surface of the trapezoidal relay prism are optical surfaces, the two inclined surfaces are total reflection surfaces, the edge of the aperture of the bottom surface of the trapezoidal relay prism is used for relay, and the middle part of the top surface and the bottom surface is a transmission light path of the illumination light source.
Furthermore, the device is provided with an illumination light source which is positioned on one side of the trapezoidal image rotating prism away from the direction of the optical axis of the camera.
The utility model discloses the detection method that the two-sided aplanatic formation of image of crystalline grain just waits the illumination based on close like optical element, its characterized in that: the detection device comprises a camera, a telecentric imaging lens, an image-combining optical element and a semiconductor crystal grain which are sequentially arranged in the direction perpendicular to an optical path, wherein two sides between the image-combining optical element and the semiconductor crystal grain are provided with trapezoidal image-rotating prisms, and two sides of the semiconductor crystal grain are imaged in different area positions on the surface of a camera sensor through the trapezoidal image-rotating prisms and the image-combining optical element by double optical paths; when the device works, the left side surface of the illuminated semiconductor crystal grain sequentially passes through 180-degree image rotation of two inclined surfaces of the trapezoidal image rotation prism, and is imaged on the left half area of the camera sensor surface by the telecentric imaging lens after passing through 90-degree image rotation of the image combination optical element; for the right side surface of the semiconductor crystal grain, the right side surface passes through two inclined surfaces of another trapezoidal image rotating prism and an image combination optical element and then is imaged on the right half area of the camera sensor surface by a telecentric imaging lens; images of the left side and the right side of the semiconductor die are also obtained from the imaging plane of the camera, and the image of the left side of the semiconductor die and the image of the right side of the semiconductor die are separated by a small distance.
The utility model discloses the detection method that the two-sided aplanatic formation of image of crystalline grain just waits the illumination based on close like optical element, its characterized in that: the detection device comprises a camera, a telecentric imaging lens, an image-combining optical element and a semiconductor crystal grain which are sequentially arranged in the direction perpendicular to an optical path, wherein trapezoidal image-rotating prisms are arranged on the upper side and the lower side between the image-combining optical element and the semiconductor crystal grain, and the top surface and the bottom surface of the semiconductor crystal grain are imaged in different area positions on the surface of a camera sensor through the trapezoidal image-rotating prisms and the image-combining optical element by double optical paths; when the device works, the top surface of the illuminated semiconductor crystal grain sequentially passes through 180-degree image rotation of two inclined surfaces of the trapezoidal image rotation prism, and is imaged on the left half area of the camera sensor surface by the telecentric imaging lens after passing through 90-degree image rotation of the image combination optical element; for the bottom surface of the semiconductor crystal grain, the bottom surface passes through two inclined planes of another trapezoidal image rotating prism and an image combination optical element and then is imaged on the right half area of the camera sensor surface by a telecentric imaging lens; the images of the top and bottom surfaces of the semiconductor die are also obtained from the imaging surface of the camera, and the images of the top and bottom surfaces of the semiconductor die are separated by a small distance.
The utility model discloses technical advantage as follows:
the single image combination optical element replaces two independent right-angle image rotation prisms to realize the image combination function of the double-sided imaging light path.
Secondly, the image transfer function of the image combining optical element is realized by adopting total reflection, and a reflecting surface needs to be plated with a medium high-reflection film or other high-reflection films like a single right-angle double-sided reflecting prism.
And the interval between the two images of the crystal grain is adjustable and controllable, and can be realized by fine adjustment of the image combining optical element along the direction of the optical axis.
The use of the trapezoidal relay prism simplifies the illumination light source system, and compared with the illumination light source system (figures 3a, 3b and 3 c) containing the wedge-shaped refraction prism or the right-angle beam splitter prism, the proposal has the advantages of simpler structure, easier assembly and debugging, higher energy utilization rate and lower cost.
Description of the drawings:
FIGS. 1, 2, 3a, 3b, 3c illustrate a conventional apparatus for optically inspecting the surface of a semiconductor die;
FIGS. 4 and 4b are diagrams illustrating an apparatus for optically inspecting two side surfaces of a semiconductor die according to the present invention;
FIG. 5 is a dimension parameter diagram of the image combining optical element;
fig. 6 is a dimensional parameter diagram of a trapezoidal relay prism.
The specific implementation mode is as follows:
the utility model discloses two-sided while aplanatism of crystalline grain formation of image and waiting illuminance illumination's detection device includes camera 1, telecentric imaging lens 2, the image optical element 3 and semiconductor crystalline grain 4 that set gradually on perpendicular light path direction, and semiconductor crystalline grain 4 can bear and put on objective table 5, the both sides portion of image optical element and semiconductor crystalline grain between be equipped with trapezoidal rotating image prism 6, two sides 401 of semiconductor crystalline grain are respectively through two trapezoidal rotating image prisms 6a, 6b, the image optical element 3 of image formation of image with two light paths different region position on camera 1 sensor face.
Or, the utility model discloses the two-sided aplanatic formation of image of crystalline grain and waiting illuminance illumination's detection device simultaneously based on optical element that closes images includes camera 1, telecentric imaging lens 2, close image optical element 3 and the semiconductor crystalline grain 4 that sets gradually on perpendicular light path direction, and semiconductor crystalline grain 4 can bear and put on objective table 5, close the upper and lower both sides between optical element 3 and the semiconductor crystalline grain 4 and be equipped with trapezoidal rotating image prism 6, semiconductor crystalline grain's top 402 and bottom surface 403 are respectively through two trapezoidal rotating image prisms 6a, 6b, close image optical element 3 with the regional position of two light path formation of image differences on camera 1 sensor face.
The structures of the image combining optical element 3 and the trapezoidal relay prism 6 will be described in detail below.
The top surface 301 of the image combination optical element close to the camera is a plane and is an image combination output surface of a double light path, the top surface of the image combination optical element is perpendicular to the optical axis of the camera, the left plane 302 and the right plane 303 of the image combination optical element are respectively double light path imaging input surfaces and are parallel to the optical axis K of the camera, the bottom aperture centers of the image combination optical element far away from the camera and perpendicular to the optical axis K are total reflection surfaces which form 90 degrees with each other, and the total reflection surfaces which form 90 degrees with each other form a V-shaped groove inner total reflection surface.
The image combining optical element is in a cuboid shape, the size of the image combining optical element is 20x10x20mm, and the height from the vertex of the total reflection surface in the V-shaped groove of the bottom surface to the bottom surface is 5 mm; the image combination optical element is formed by molding glass or optical plastic, or is formed by processing, gluing and splicing two right-angle reflecting prisms, or two spliced surfaces are bonded into a whole by a light gluing method.
By moving the image combining optical element 3 in the direction of the optical axis, the interval between the images of the two sides of the semiconductor crystal grain on the camera sensor can be adjusted, and the interval needs to be selected reasonably, is too small to facilitate the image recognition processing, and is too large to affect the view field of the lens.
The optical prism assembly with the double-light-path image combination function is placed in a proper position in front of the imaging lens, so that a sensor of the imaging lens can obtain a desired double-sided image.
Further, the position of the image combination optical element along the optical axis direction of the camera is adjusted, the interval between the double-sided imaging of the crystal grains on the output surface is delta ≈ d + a =3.3mm, wherein the interval between the edges of the double-sided imaging of the crystal grains close to each other is d =2mm, the size of the crystal grains is a =1.3mm, and the distance from the center of the to-be-measured surface of the crystal grains to the vertex of the right-angle reflecting surface on the input surface is delta/2.
The side of the trapezoidal relay prism 6 far away from the optical axis of the camera is a small end, namely a top 601 of the trapezoidal relay prism, the side near the optical axis of the camera is a large end, namely a bottom 602 of the trapezoidal relay prism, the top and the bottom of the trapezoidal relay prism are optical surfaces, the two inclined surfaces 603 are total reflection surfaces, the aperture edge of the bottom of the trapezoidal relay prism is used for relay function, and the middle part of the top and the bottom is a transmission light path of an illumination light source.
The device is provided with illumination light sources 7a and 7b, wherein the illumination light sources are positioned on one side of the trapezoidal image rotating prism, which is far away from the direction of the optical axis of the camera; the camera is a camera having a sensor CCD or CMOS.
Taking fig. 4 as an example, the utility model discloses a crystalline grain two-sided aplanatic imaging and isocandela illumination's detection method simultaneously based on close image optical element, this detection device include camera 1, telecentric imaging lens 2, close image optical element 3 and semiconductor crystalline grain 4 that set gradually on perpendicular light path direction, semiconductor crystalline grain 4 can be born on objective table 5, the both sides portion between close image optical element and the semiconductor crystalline grain is equipped with trapezoidal image transfer prism 6, two sides 401 of semiconductor crystalline grain are respectively through two trapezoidal image transfer prisms 6a, 6b, close image optical element 3 with the different region positions of two light path formation of image on camera 1 sensor face; when the device works, the left side surface of the illuminated semiconductor crystal grain sequentially passes through 180-degree image rotation of two inclined surfaces of the trapezoidal image rotation prism, and is imaged on the left half area of the camera sensor surface by the telecentric imaging lens after passing through 90-degree image rotation of the image combination optical element; for the right side surface of the semiconductor crystal grain, the right side surface passes through two inclined surfaces of another trapezoidal image rotating prism and an image combination optical element and then is imaged on the right half area of the camera sensor surface by a telecentric imaging lens; images of the left side and the right side of the semiconductor die are also obtained from the imaging plane of the camera, and the image of the left side of the semiconductor die and the image of the right side of the semiconductor die are separated by a small distance.
Similarly, for the simultaneous detection of the two opposite surfaces of the semiconductor crystal grain, the above similar detection device can be applied, only the trapezoidal relay prism needs to be respectively arranged at one side of the top surface and the bottom surface of the semiconductor crystal grain, and the camera 1, the imaging lens 2 and the image combining optical element 3 are arranged in the horizontal light path direction of the semiconductor crystal grain, as shown in fig. 4b, the detection device based on the image combining optical element for the crystal grain double-sided simultaneous equal-optical-path imaging and equal-illumination comprises the camera 1, the telecentric imaging lens 2, the image combining optical element 3 and the semiconductor crystal grain 4 which are sequentially arranged in the vertical light path direction, the semiconductor crystal grain 4 can be arranged on the objective table 5, the trapezoidal relay prisms 6 are arranged at the upper and lower sides between the image combining optical element 3 and the semiconductor crystal grain 4, and the top surface 402 and the bottom surface 403 of the semiconductor crystal grain respectively pass through the two trapezoidal relay prisms 6a, 6b, the image combination optical element 3 forms images on different area positions on the sensor surface of the camera 1 by a double light path; when the device works, the top surface of the illuminated semiconductor crystal grain sequentially passes through 180-degree image rotation of two inclined surfaces of the trapezoidal image rotation prism, and is imaged on the left half area of the camera sensor surface by the telecentric imaging lens after passing through 90-degree image rotation of the image combination optical element; for the bottom surface of the semiconductor crystal grain, the bottom surface passes through two inclined planes of another trapezoidal image rotating prism and an image combination optical element and then is imaged on the right half area of the camera sensor surface by a telecentric imaging lens; the images of the top and bottom surfaces of the semiconductor die are also obtained from the imaging surface of the camera, and the images of the top and bottom surfaces of the semiconductor die are separated by a small distance.
The utility model discloses technical advantage as follows:
the single image combination optical element replaces two independent right-angle image rotation prisms to realize the image combination function of the double-sided imaging light path.
Secondly, the image transfer function of the image combining optical element is realized by adopting total reflection, and a reflecting surface needs to be plated with a medium high-reflection film or other high-reflection films like a single right-angle double-sided reflecting prism.
And the interval between the two images of the crystal grain is adjustable and controllable, and can be realized by fine adjustment of the image combining optical element along the direction of the optical axis.
The use of the trapezoidal relay prism simplifies the illumination light source system, and compared with the illumination light source system (figures 3a, 3b and 3 c) containing the wedge-shaped refraction prism or the right-angle beam splitter prism, the proposal has the advantages of simpler structure, easier assembly and debugging, higher energy utilization rate and lower cost.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the same; although the present invention has been described in detail with reference to preferred embodiments, it should be understood by those skilled in the art that: the invention can be modified or equivalent substituted for some technical features; without departing from the spirit of the present invention, it should be understood that the scope of the claims is intended to cover all such modifications and variations.
Claims (8)
1. A detection device for crystal grain double-sided simultaneous aplanatic imaging and isoluminance illumination is characterized in that: the imaging device comprises a camera, a telecentric imaging lens, an image combination optical element and a semiconductor crystal grain which are sequentially arranged in the direction perpendicular to an optical path, wherein trapezoidal image rotating prisms are arranged at two side parts between the image combination optical element and the semiconductor crystal grain, and two side surfaces of the semiconductor crystal grain are imaged at different area positions on the surface of a camera sensor through the trapezoidal image rotating prisms and the image combination optical element in a double optical path mode.
2. A detection device for crystal grain double-sided simultaneous aplanatic imaging and isoluminance illumination is characterized in that: the imaging device comprises a camera, a telecentric imaging lens, an image combination optical element and a semiconductor crystal grain which are sequentially arranged in the direction perpendicular to an optical path, wherein trapezoidal image rotating prisms are arranged on the upper side and the lower side between the image combination optical element and the semiconductor crystal grain, and the top surface and the bottom surface of the semiconductor crystal grain are imaged in different area positions on the surface of a camera sensor through the trapezoidal image rotating prisms and the image combination optical element in a double-optical-path mode.
3. The apparatus for detecting die double-sided simultaneous aplanatic imaging and isoluminance illumination as claimed in claim 1 or 2, wherein: the top surface of the image combination optical element, which is close to the camera, is a plane and is a combined image output surface of the double light paths, the top surface of the image combination optical element is perpendicular to the optical axis of the camera, the left plane and the right plane of the image combination optical element are respectively double light path imaging input surfaces and are parallel to the optical axis of the camera, the center of the aperture of the bottom surface of the image combination optical element, which is far away from the camera and is perpendicular to the optical axis, is a total reflection surface which forms 90 degrees with each other, and the total reflection surfaces which form 90 degrees with each other form a V-shaped groove.
4. The die double-sided simultaneous aplanatic imaging and isolux illumination detection apparatus as claimed in claim 3, wherein: the image combining optical element is in a cuboid shape, the size of the image combining optical element is 20x10x20mm, and the height from the vertex of the total reflection surface in the V-shaped groove of the bottom surface to the bottom surface is 5 mm.
5. The die double-sided simultaneous aplanatic imaging and isolux illumination detection apparatus as claimed in claim 3, wherein: and adjusting the position of the image combination optical element along the optical axis direction of the camera, wherein the interval between the double-sided imaging of the crystal grains on the output surface is delta & lt d + a =3.3mm, the interval between the edges of the double-sided imaging of the crystal grains close to each other is d =2mm, the size of the crystal grains is a =1.3mm, and the distance from the center of the to-be-measured surface of the crystal grains to the vertex of the right-angle reflecting surface on the input surface is delta/2.
6. The die double-sided simultaneous aplanatic imaging and isolux illumination detection apparatus as claimed in claim 3, wherein: the image combination optical element is formed by molding glass or optical plastic, or is formed by processing, gluing and splicing two right-angle reflecting prisms, or two spliced surfaces are bonded into a whole by a light gluing method.
7. The apparatus for detecting die double-sided simultaneous aplanatic imaging and isoluminance illumination as claimed in claim 1 or 2, wherein: the trapezoidal image rotating prism is a small end which is the top surface of the trapezoidal image rotating prism at the side far away from the optical axis of the camera, a big end which is the bottom surface of the trapezoidal image rotating prism at the side near the optical axis of the camera, the top surface and the bottom surface of the trapezoidal image rotating prism are optical surfaces, the two inclined surfaces are total reflection surfaces, the aperture edge of the bottom surface of the trapezoidal image rotating prism is used for image rotating, and the middle part of the top surface and the bottom surface is a transmission light path of an illumination light source.
8. The apparatus for detecting die double-sided simultaneous aplanatic imaging and isoluminance illumination as claimed in claim 1 or 2, wherein: the device is provided with an illumination light source, and the illumination light source is positioned on one side of the trapezoidal image rotating prism, which is far away from the direction of the optical axis of the camera.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109839357A (en) * | 2019-01-15 | 2019-06-04 | 南京矢航信息技术有限公司 | A kind of double spectrum imaging device based on CMOS image planes cutting techniques |
| KR20220135354A (en) * | 2021-03-30 | 2022-10-07 | 주식회사 뷰온 | Optics apparatus For Inspecting Surface |
-
2020
- 2020-03-01 CN CN202020230481.6U patent/CN211856382U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109839357A (en) * | 2019-01-15 | 2019-06-04 | 南京矢航信息技术有限公司 | A kind of double spectrum imaging device based on CMOS image planes cutting techniques |
| KR20220135354A (en) * | 2021-03-30 | 2022-10-07 | 주식회사 뷰온 | Optics apparatus For Inspecting Surface |
| KR102638769B1 (en) | 2021-03-30 | 2024-02-20 | 주식회사 뷰온 | Optics apparatus For Inspecting Surface |
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